CN109546623B - Short-circuit protection circuit of charge pump boost circuit - Google Patents
Short-circuit protection circuit of charge pump boost circuit Download PDFInfo
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- CN109546623B CN109546623B CN201910033147.3A CN201910033147A CN109546623B CN 109546623 B CN109546623 B CN 109546623B CN 201910033147 A CN201910033147 A CN 201910033147A CN 109546623 B CN109546623 B CN 109546623B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1213—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
Abstract
The invention discloses a short-circuit protection circuit of a charge pump booster circuit, which comprises the following components: the short circuit detection circuit determines whether the charge pump boosting circuit is short-circuited or not by comparing the output voltage of the charge pump boosting circuit with the magnitude relation of a short circuit detection threshold value, and outputs a short circuit indication signal of the charge pump boosting circuit to the time sequence triggering circuit when the short circuit is determined to occur, the time sequence triggering circuit outputs a short circuit signal of the charge pump boosting circuit and a closing signal of the charge pump boosting circuit to stop the charge pump boosting circuit, and the time sequence triggering circuit is triggered to stop outputting the closing signal of the charge pump boosting circuit when the short circuit time reaches a preset time to enable the charge pump boosting circuit to normally work. The invention effectively solves the problem that in high-voltage application, the charge pump voltage boosting circuit is easy to burn the power tube due to short circuit because the charge pump voltage boosting circuit cannot perform short circuit protection.
Description
Technical Field
The invention relates to the technical field of charge pumps, in particular to a short-circuit protection circuit of a charge pump boosting circuit.
Background
The charge pump boost circuit is a switching power supply converter using a capacitor as an energy storage element, and has the advantages of small EMI (Electromagnetic Interference ), small occupied area, low system cost and the like, so that the charge pump boost circuit is widely applied to electronic circuits of portable equipment.
The common charge pump booster circuit has a 1.5 times and a 2 times booster structure, and the two booster structures have a short-circuit protection function and an overvoltage protection function so as to ensure the effective and reliable operation of the charge pump booster circuit. In low voltage applications, the open loop charge pump boost circuit enters an overvoltage protection mode of operation when the supply voltage exceeds the overvoltage protection threshold of the charge pump boost circuit, and current is supplied to the load by the capacitor. If the load current is smaller, the output voltage of the charge pump booster circuit drops to the overvoltage protection exit threshold value, and the charge pump booster circuit enters a normal working mode. If the load current is large, the charge pump boosting circuit is in a heavy-load current-limiting protection mode; if the output voltage of the charge pump boosting circuit is short-circuited to ground, the charge pump boosting circuit is in a short-circuit protection mode.
However, with the increasing integration of chips, in high-voltage applications, when a charge pump booster circuit is used as a power supply, since the source drain voltage of the charge pump booster circuit has no voltage withstand problem, in order to save the chip area, a low-voltage device is generally used as a power tube of the charge pump booster circuit. However, in high voltage applications, the charge pump boost circuit cannot be short-circuited, resulting in the charge pump boost circuit being prone to burning out the power tube due to the short circuit.
Disclosure of Invention
In view of the above, the present invention discloses a short-circuit protection circuit for a charge pump voltage-boosting circuit, which solves the problem that the conventional scheme is easy to burn a power tube due to short circuit because the charge pump voltage-boosting circuit cannot perform short-circuit protection in high-voltage application.
A charge pump boost circuit short-circuit protection circuit comprising: the circuit comprises a short circuit detection circuit, a time sequence trigger circuit and a short circuit protection time generation circuit, wherein the initial state of the time sequence trigger circuit is a reset state;
the input end of the short circuit detection circuit is connected with the output end of the charge pump boosting circuit, the short circuit detection circuit is used for detecting the output voltage of the charge pump boosting circuit and comparing the output voltage with a short circuit detection threshold value, the first output end of the short circuit detection circuit is used for outputting a charge pump boosting circuit boosting completion indication signal when the output voltage is smaller than the short circuit detection threshold value, and the second output end of the short circuit detection circuit is used for outputting a charge pump boosting circuit short circuit indication signal when the time for outputting the charge pump boosting circuit boosting completion indication signal at the first output end exceeds the threshold value time, wherein the substrate of a charging phase adjusting tube of the charge pump boosting circuit is connected with the drain end of the adjusting tube;
the time sequence trigger circuit is connected with the short circuit detection circuit and is used for outputting a short circuit signal of the charge pump boosting circuit and a closing signal of the charge pump boosting circuit after receiving the short circuit indication signal of the charge pump boosting circuit so as to stop the charge pump boosting circuit;
the short-circuit protection time generation circuit is connected with the time sequence trigger circuit and is used for controlling the time sequence trigger circuit to stop outputting the closing signal of the charge pump boosting circuit when the short-circuit time of the charge pump boosting circuit reaches the preset time.
Optionally, the short circuit detection circuit is further configured to output a short circuit cancellation signal of the charge pump boost circuit when it is determined that the output voltage of the charge pump boost circuit is not less than the short circuit detection threshold;
the time sequence trigger circuit is also used for receiving the short circuit cancel signal of the charge pump booster circuit and outputting a restart signal of the charge pump booster circuit so as to make the charge pump booster circuit work again.
Optionally, the timing trigger circuit includes: the first D trigger, the second D trigger, the third D trigger and the first NAND gate;
the data input end of the second D trigger DFF is connected with the output end of the short circuit detection circuit and is used for acquiring the short circuit indication signal of the charge pump boosting circuit output by the short circuit detection circuit, meanwhile, the clock input end of the second D trigger is input with a clock signal, and the data latch output end of the second D trigger is used for outputting the short circuit indication signal;
the clock input end of the first D trigger is connected with the data latch output end of the second D trigger, the first D trigger is used for taking the short circuit indication signal output by the second D trigger as a clock sampling signal, the first data latch output end of the first D trigger DFF1 is used for outputting a short circuit high setting signal to the 1 setting end of the third D trigger, and the data latch output end of the third D trigger is used for outputting a short circuit signal of a charge pump boosting circuit;
the first NAND gate is respectively connected with the second data latch output end of the first D trigger and the reset end of the third D trigger, and is used for outputting a charge pump boosting circuit closing signal when the second data latch output end does not output a signal.
Optionally, the method further comprises: a first inverter, a second inverter, and a second NAND gate;
the data input end of the third D trigger DFF3 is connected with the output end of the second inverter, the input end of the second inverter is connected with the output end of the second NAND gate, the first input end of the second NAND gate is connected with the data latch output end of the third D trigger, the second input end of the second NAND gate is connected with the output end of the first inverter, and the input end of the first inverter is connected with the first output end of the short circuit detection circuit.
Optionally, the method further comprises: a nor gate and a third inverter;
the 1-end of the second D trigger is grounded, the common end of the reset end of the second D trigger and the reset end of the first D trigger is connected with the output end of the NOR gate, the first input end of the NOR gate is connected with the output end of the third inverter, the second input end of the NOR gate is connected with the output end of the short-circuit protection time generating circuit, and the input ends of the short-circuit protection time generating circuit are respectively connected with the first data latch output end of the first D trigger and the 1-end of the third D trigger.
As can be seen from the above technical solution, the present invention discloses a short-circuit protection circuit for a charge pump boost circuit, comprising: the short circuit detection circuit determines whether the charge pump boosting circuit is short-circuited or not by comparing the output voltage of the charge pump boosting circuit with the magnitude relation of a short circuit detection threshold value, and outputs a short circuit indication signal of the charge pump boosting circuit to the time sequence triggering circuit when the short circuit of the charge pump boosting circuit is determined, the time sequence triggering circuit outputs a short circuit signal of the charge pump boosting circuit and a closing signal of the charge pump boosting circuit to stop the charge pump boosting circuit, and the short circuit protection time generation circuit triggers the time sequence triggering circuit to stop outputting the closing signal of the charge pump boosting circuit when the short circuit time of the charge pump boosting circuit reaches the preset time to enable the charge pump boosting circuit to normally work. Therefore, the invention effectively solves the problem that the charge pump voltage boosting circuit is easy to burn the power tube due to short circuit because the charge pump voltage boosting circuit cannot perform short circuit protection in high-voltage application.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the disclosed drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a 2-fold charge pump boost circuit disclosed in the prior art;
FIG. 2 is a schematic diagram of a 2-fold charge pump boost circuit operating in a charge phase as disclosed in the prior art;
FIG. 3 is a schematic diagram of a 2-fold charge pump boost circuit operating in the discharge phase as disclosed in the prior art;
FIG. 4 is a schematic diagram of a 2-fold charge pump boost circuit operating in a charge phase using a low voltage power tube according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a 2-fold charge pump boost circuit operating in a discharge phase using a low voltage power tube according to an embodiment of the present invention;
fig. 6 is a circuit diagram of a short-circuit protection circuit of a charge pump boost circuit according to an embodiment of the present invention;
fig. 7 is a simulation waveform diagram of a charge pump boost circuit short-circuit protection circuit according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, a schematic diagram of a 2-fold boost charge pump boost circuit disclosed in the prior art, the 2-fold boost charge pump boost circuit is shown in a dashed box in fig. 1, and includes: an output voltage detection circuit 11, an overvoltage protection circuit 12, a charge pump boosting circuit control circuit 13, a reference circuit 14, a clock generation circuit 15, a charge pump boosting circuit 16, an overcurrent detection circuit 17, and a current limit control circuit 18.
The charge pump boost circuit 16 in fig. 1 includes four switching tubes, as shown in fig. 2, a schematic diagram of the charge pump boost circuit disclosed in the prior art when operating in a charging phase, where the four switching tubes in the charge pump boost circuit are respectively: the output voltage VUOT of the charge pump booster circuit is 2 times of the input voltage VBAT through time sequence control of the four switch tubes by the PMOS tube P0, the PMOS tube P2, the PMOS tube P3 and the NMOS tube N1.
In the charge phase, as shown in fig. 2, the PMOS transistor P0 and the NMOS transistor N1 are turned on, the PMOS transistor P2 and the PMOS transistor P3 are turned off, the gate of the PMOS transistor P0 is connected to GND, the input voltage VBAT charges the non-capacitor Cf, and the current flows to the dashed line in fig. 2, at this time, the current flowing through the non-capacitor Cf is 2Iout, and the current of the charge pump booster circuit at the output end is Iout.
In the discharging phase, the current flows are shown by the broken line in fig. 3, the PMOS transistor P0 and the NMOS transistor N1 are turned off, the PMOS transistor P2 and the PMOS transistor P3 are turned on, the gate of the PMOS transistor P0 is connected to VH, VH is a high-selection circuit of the input voltage VBAT and the output voltage VOUT, in order to prevent the discharging phase current from flowing back from the voltage output terminal to the voltage input terminal, since the voltages at the two ends of the capacitor cannot be suddenly changed, the voltage of the non-capacitor Cf is superimposed on the input voltage VBAT, so that the output voltage VOUT is raised to 2 times the input voltage VBAT.
The voltage range of the non-capacitor Cf at the CP end is VBAT-2 VBAT, and the voltage range of the non-capacitor Cf at the CN end is 0-VBAT, so that the voltage at the two ends of the four power tubes does not exceed the input voltage VBAT, and the voltage withstand problem does not exist.
With the increasing chip integration, in order to save the chip area, in many high-voltage applications, a low-voltage device is generally used as a power tube of the charge pump boost circuit, and only consideration needs to be given to that the gate-source voltage VGS and the gate-substrate voltage VGB of the power tube cannot exceed the input voltage VBAT.
Based on this, the present invention improves the charge pump boosting circuit shown in fig. 2 and 3.
Referring to fig. 4 and fig. 5, which are schematic diagrams of a 2-time charge pump boost circuit using a low-voltage power tube and a schematic diagram of a charge phase and a discharge phase according to an embodiment of the present invention, the circuits shown in fig. 4 and fig. 5 are similar to the circuit structures in fig. 2 and fig. 3, respectively, except that the substrate BULK of the PMOS tube P0 of the charge phase is connected to the drain terminal, so that the reason for this connection is that the charge pump boost circuit uses a low-voltage power tube, the gate voltage range of the NMOS tube N1 is 0-VBAT, the gate voltage range of the PMOS tube P2 is 0-VBAT, and the gate voltage range of the PMOS tube P3 is VBAT-2 VBAT, so that the voltage between the terminals does not exceed the withstand voltage value. The range of the gate voltage of the PMOS transistor P0 is 0-2 VBAT, the maximum source-drain voltage is VBAT, the maximum gate driving voltage is VBAT, if the BULK of the PMOS transistor P0 is connected to VH (VH is 2 VBAT), if vbat=4v, vh=2vbat, the gate-substrate voltage vgb=8v of the PMOS transistor P0 when the PMOS transistor P0 is charged and turned on, and the gate-substrate voltage of the P0 power transistor exceeds its withstand voltage value and is burned. Therefore, with the circuits shown in fig. 4 and 5, it is possible to ensure that the voltage between the power transistors is smaller than the input voltage VBAT.
However, in the test process or the application process, the output end of the charge pump boost circuit is short-circuited to GND, and in general, the charge pump boost circuit can start a short-circuit protection function, and the output current when the output end is short-circuited to GND is limited to a safe range of hundred milliamperes by limiting the gate voltage of the power tube. After the charge pump boost circuit shown in fig. 4 and fig. 5 is adopted, the substrate forward diode of the PMOS transistor P0 exists, so that the short-circuit current is as high as more than 2A, and the power transistor is very easy to burn out, therefore, a short-circuit protection circuit of the charge pump boost circuit needs to be added at the output end of the charge pump boost circuit, so as to solve the problem that the power transistor is easy to burn out due to short circuit or the power transistor cannot be restarted automatically after short circuit.
The embodiment of the invention discloses a charge pump boost circuit short-circuit protection circuit, which comprises: the short circuit detection circuit determines whether the charge pump boosting circuit is short-circuited or not by comparing the output voltage of the charge pump boosting circuit with the magnitude relation of a short circuit detection threshold value, and outputs a short circuit indication signal of the charge pump boosting circuit to the time sequence triggering circuit when the short circuit of the charge pump boosting circuit is determined, the time sequence triggering circuit outputs a short circuit signal of the charge pump boosting circuit and a closing signal of the charge pump boosting circuit to stop the charge pump boosting circuit, and the short circuit protection time generation circuit triggers the time sequence triggering circuit to stop outputting the closing signal of the charge pump boosting circuit when the short circuit time of the charge pump boosting circuit reaches the preset time to enable the charge pump boosting circuit to normally work. Therefore, the invention effectively solves the problem that the charge pump voltage boosting circuit is easy to burn the power tube due to short circuit because the charge pump voltage boosting circuit cannot perform short circuit protection in high-voltage application.
Referring to fig. 6, a circuit diagram of a short-circuit protection circuit for a charge pump boost circuit according to an embodiment of the present invention includes: a short-circuit detection circuit 21, a timing trigger circuit 22, and a short-circuit protection time generation circuit 23, wherein an initial state of the timing trigger circuit 22 is a reset state;
the input end of the short circuit detection circuit 21 is connected with the output end of the charge pump boost circuit, wherein the substrate of the charge phase adjusting tube of the charge pump boost circuit is connected with the drain end of the adjusting tube, namely, the substrate of the PMOS tube P0 in fig. 4 and 5 is connected with the drain end of the PMOS tube P0, the short circuit detection circuit 21 is used for detecting the output voltage of the charge pump boost circuit and comparing the output voltage with a short circuit detection threshold value, a first output end of the short circuit detection circuit 21 is used for outputting a charge pump boost circuit boost completion indication signal when the output voltage is smaller than the short circuit detection threshold value, and a second output end of the short circuit detection circuit 21 is used for outputting the charge pump boost circuit boost completion indication signal when the time of the first output end outputting the charge pump boost circuit boost completion indication signal exceeds the threshold value time;
the time sequence trigger circuit 22 is connected with the short circuit detection circuit 21, and the time sequence trigger circuit 22 is used for outputting a short circuit signal of the charge pump boosting circuit and a closing signal of the charge pump boosting circuit after receiving the short circuit indication signal of the charge pump boosting circuit so as to stop the charge pump boosting circuit;
the short-circuit protection time generating circuit 23 is connected to the timing trigger circuit 22, and the short-circuit protection time generating circuit 23 is configured to control the timing trigger circuit 22 to stop outputting the charge pump voltage boosting circuit closing signal when the short-circuit time of the charge pump voltage boosting circuit reaches a preset time.
In this embodiment, the output terminal of the charge pump boost circuit is the output terminal of the charge pump boost circuit.
As can be seen from the above, the charge pump boost circuit short-circuit protection circuit disclosed by the invention comprises: the short circuit detection circuit 21, the time sequence trigger circuit 22 and the short circuit protection time generation circuit 23, wherein the short circuit detection circuit 21 determines whether the short circuit occurs in the charge pump voltage boosting circuit or not by comparing the magnitude relation between the output voltage of the charge pump voltage boosting circuit and the short circuit detection threshold value, and when the short circuit occurs in the charge pump voltage boosting circuit, the short circuit detection circuit outputs a short circuit indication signal of the charge pump voltage boosting circuit to the time sequence trigger circuit 22, the time sequence trigger circuit 22 outputs a short circuit signal of the charge pump voltage boosting circuit and a closing signal of the charge pump voltage boosting circuit, so that the charge pump voltage boosting circuit stops working, and the short circuit protection time generation circuit 23 triggers the time sequence trigger circuit 22 to stop outputting the closing signal of the charge pump voltage boosting circuit when the short circuit time of the charge pump voltage boosting circuit reaches the preset time, so that the charge pump voltage boosting circuit works normally. Therefore, the invention effectively solves the problem that the charge pump voltage boosting circuit is easy to burn the power tube due to short circuit because the charge pump voltage boosting circuit cannot perform short circuit protection in high-voltage application.
To further optimize the above embodiment, the short-circuit detection circuit 21 is further configured to output a short-circuit cancel signal of the charge pump voltage boosting circuit when it is determined that the output voltage of the charge pump voltage boosting circuit is not less than the short-circuit detection threshold.
The timing trigger circuit 22 is configured to receive the short circuit cancel signal of the charge pump boost circuit and output a restart signal of the charge pump boost circuit, so as to restart the charge pump boost circuit.
In summary, the short-circuit protection circuit of the charge pump voltage boosting circuit disclosed by the invention not only can be used for closing the charge pump voltage boosting circuit when the charge pump voltage boosting circuit is short-circuited, but also can be used for detecting the output voltage of the charge pump voltage boosting circuit in real time and automatically starting the charge pump voltage boosting circuit after determining that the short circuit of the charge pump voltage boosting circuit is cancelled, thereby effectively solving the problems that the charge pump voltage boosting circuit is easy to burn a power tube due to the short circuit and cannot be restarted automatically after the short circuit because the charge pump voltage boosting circuit cannot be short-circuited in high-voltage application.
As shown in fig. 6, the timing trigger circuit 22 includes: a first D flip-flop DFF1, a second D flip-flop DFF2, a third D flip-flop DFF3, and a first NAND gate NAND1;
the data input end of the second D trigger DFF2 is connected with the output end of the short circuit detection circuit 21 and is used for acquiring a short circuit indication signal of the charge pump boosting circuit output by the short circuit detection circuit 21, meanwhile, the clock input end of the second D trigger DFF2 is input with a clock signal, and the data latch output end of the second D trigger DFF2 is used for outputting the short circuit indication signal;
the clock input end of the first D trigger DFF1 is connected with the data latch output end of the second D trigger DFF2, the first D trigger DFF1 is used for taking a short circuit indication signal output by the second D trigger DFF2 as a clock sampling signal, the first data latch output end Q of the first D trigger DFF1 is used for outputting a short circuit high setting signal ST_SET to the 1 setting end S of the third D trigger DFF3, and the data latch output end of the third D trigger DFF3 is used for outputting a short circuit signal of a charge pump boosting circuit;
the first NAND gate NAND2 is connected to the second data latch output terminal of the first D flip-flop DFF1 and the reset terminal R of the third D flip-flop DFF3, respectively, and the first NAND gate NAND2 is configured to output the charge pump boosting circuit shut-off signal when the second data latch output terminal does not output the signal.
In the embodiment shown in fig. 6, the method further includes: a first inverter INV1, a second inverter INV2, and a second NAND gate NAND2;
the data input end D of the third D trigger DFF3 is connected with the output end of the second inverter INV2, the input end of the second inverter INV2 is connected with the output end of the second NAND gate NAND2, the first input end of the second NAND gate NAND2 is connected with the data latch output end Q of the third D trigger DFF3, the second input end of the second NAND gate NAND2 is connected with the output end of the first inverter INV1, and the input end of the first inverter INV1 is connected with the first output end of the short circuit detection circuit 21.
In the embodiment shown in fig. 6, the method further includes: a NOR gate NOR1 and a third inverter INV3;
the 1-end of the second D trigger DFF2 is grounded, the common end of the reset end R of the second D trigger DFF2 and the reset end R of the first D trigger DFF1 is connected with the output end of the NOR gate NOR1, the first input end of the NOR gate NOR1 is connected with the output end of the third inverter INV3, the second input end of the NOR gate NOR1 is connected with the output end of the short-circuit protection time generating circuit 23, and the input ends of the short-circuit protection time generating circuit 23 are respectively connected with the first data latch output end Q of the first D trigger DFF1 and the 1-end S of the third D trigger DFF 3.
For convenience of understanding, the following details of the working principle of the charge pump boost circuit short-circuit protection circuit are described with reference to fig. 6, which is specifically as follows:
when the output terminal of the charge pump boosting circuit is shorted, the output voltage of the charge pump boosting circuit detected by the short circuit detecting circuit 21 is smaller than the short circuit detecting threshold vth_sht, and at this time, the charge pump boosting circuit boosting completion instruction signal vouok outputted by the short circuit detecting circuit 21 becomes a low level signal, or the charge pump boosting circuit boosting completion instruction signal vouok outputted by the short circuit detecting circuit 21 becomes 0.
When the short circuit detection circuit 21 outputs the charge pump boosting completion indication signal voutk in the form of a low level signal for a time exceeding the threshold time tth_sht, the short circuit detection circuit 21 outputs a short circuit indication signal FAULT which becomes a high level signal and is input to the data input terminal of the second D flip-flop DFF2, and at the same time, the clock input terminal of the second D flip-flop DFF2 inputs the clock signal CLK, the data latch output terminal of the second D flip-flop DFF2 outputs a short circuit indication signal fault_sht which becomes a high level signal and is input to the clock input terminal of the first D flip-flop DFF1 as the clock sampling signal of the first D flip-flop DFF1, the short circuit setting high signal st_set output by the first data latch output terminal Q of the first D flip-flop DFF1Is a high level signal and is input to the 1-setting end S of the third D trigger DFF3, so that the data latch output end of the third D trigger DFF3 outputs a charge pump boost circuit SHORT-circuit signal, and in practical application, even if CP_SHORT output by the data latch output end of the third D trigger DFF3 is set high, the charge pump boost circuit SHORT-circuit is indicated to occur, and meanwhile, the second data latch output end of the first D trigger DFF1The output is 0, so that the NAND gate NAND1 outputs the charge pump boosting circuit turning off signal, that is, the pd_cp is at high level, to turn off the charge pump boosting circuit, that is, the PMOS transistor P0, the NMOS transistor N1, the PMOS transistor P2, and the PMOS transistor P3 in fig. 4 and 5 are all turned off, and the supply of the electric charges to the output capacitor is stopped.
If the boost completion indication signal voutak of the charge pump boost circuit outputted by the short-circuit detection circuit 21 is always low, the short-circuit SET high signal st_set outputted by the first data latch output terminal Q of the first D flip-flop DFF1 is always high, the short-circuit protection time generation circuit 23 is configured to time the short-circuit protection time, and when it is determined that the short-circuit protection time reaches the preset time tprotec, the short-circuit protection time generation circuit 23 outputs a high level to make RESET 0, RESETs the second D flip-flop DFF2 and the first D flip-flop DFF1, stops outputting the signal at the first data latch output terminal Q of the first D flip-flop DFF1, even if the st_set signal becomes 0, and RESETs the short-circuit protection time generation circuit 23, so that the short-circuit protection time generation circuit 23 outputs 0. At this time, the second data latch output terminal Q of the first D flip-flop DFF1 is outputted to a high level, causing the not gate NAND2 to stop outputting the charge pump boosting circuit off signal, and causing the charge pump boosting circuit to operate normally even if pd_cp=0.
If the output terminal VOUT of the charge pump voltage boosting circuit is still short-circuited, the charge pump voltage boosting circuit voltage boosting completion instruction signal voutak outputted by the short circuit detection circuit 21 is still 0, and at this time, the above-mentioned process is repeated, the charge pump voltage boosting circuit is turned off, and the charge pump voltage boosting circuit is in the short circuit protection mode until the short circuit of the output terminal of the charge pump voltage boosting circuit is cancelled.
When the output end of the charge pump boosting circuit is in SHORT circuit withdrawal, the voltage of the output end of the charge pump boosting circuit gradually rises, the charge pump boosting circuit boosting completion indication signal voutak output by the SHORT circuit detection circuit 21 becomes a high level signal, and the third D trigger DFF3 outputs 0, that is, cp_short is 0, so that the charge pump boosting circuit exits from the SHORT circuit protection state.
In order to facilitate understanding, the present invention also simulates a short-circuit protection circuit of a charge pump voltage-boosting circuit, and the simulation result refers to a simulation waveform diagram shown in fig. 7, and it can be seen from the simulation diagram that when the short-circuit detection circuit 21 detects that the output voltage of the charge pump voltage-boosting circuit is smaller than the short-circuit detection threshold vth_sht, the voltage-boosting completion indication signal voutak of the charge pump voltage-boosting circuit output by the short-circuit detection circuit 21 becomes a low level, and at this time, the output waveform is consistent with the above description, and after the charge pump voltage-boosting circuit tprotec is turned off, the charge pump voltage-boosting circuit is turned on again.
In summary, the short-circuit protection circuit of the charge pump voltage boosting circuit disclosed by the invention not only can be used for closing the charge pump voltage boosting circuit when the charge pump voltage boosting circuit is short-circuited, but also can be used for detecting the output voltage of the charge pump voltage boosting circuit in real time and automatically starting the charge pump voltage boosting circuit after determining that the short circuit of the charge pump voltage boosting circuit is cancelled, thereby effectively solving the problems that the charge pump voltage boosting circuit is easy to burn a power tube due to the short circuit and cannot be restarted automatically after the short circuit because the charge pump voltage boosting circuit cannot be short-circuited in high-voltage application.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (4)
1. A charge pump boost circuit short-circuit protection circuit, comprising: the circuit comprises a short circuit detection circuit, a time sequence trigger circuit and a short circuit protection time generation circuit, wherein the initial state of the time sequence trigger circuit is a reset state;
the input end of the short circuit detection circuit is connected with the output end of the charge pump boosting circuit, the short circuit detection circuit is used for detecting the output voltage of the charge pump boosting circuit and comparing the output voltage with a short circuit detection threshold value, the first output end of the short circuit detection circuit is used for outputting a charge pump boosting circuit boosting completion indication signal when the output voltage is smaller than the short circuit detection threshold value, and the second output end of the short circuit detection circuit is used for outputting a charge pump boosting circuit short circuit indication signal when the time for outputting the charge pump boosting circuit boosting completion indication signal at the first output end exceeds the threshold value time, wherein the substrate of a charging phase adjusting tube of the charge pump boosting circuit is connected with the drain end of the adjusting tube;
the time sequence trigger circuit is connected with the short circuit detection circuit and is used for outputting a short circuit signal of the charge pump boosting circuit and a closing signal of the charge pump boosting circuit after receiving the short circuit indication signal of the charge pump boosting circuit so as to stop the charge pump boosting circuit;
the short-circuit protection time generation circuit is connected with the time sequence trigger circuit and is used for controlling the time sequence trigger circuit to stop outputting the closing signal of the charge pump boosting circuit when the short-circuit time of the charge pump boosting circuit reaches the preset time;
the timing trigger circuit includes: the first D trigger, the second D trigger, the third D trigger and the first NAND gate;
the data input end of the second D trigger DFF is connected with the output end of the short circuit detection circuit and is used for acquiring the short circuit indication signal of the charge pump boosting circuit output by the short circuit detection circuit, meanwhile, the clock input end of the second D trigger is input with a clock signal, and the data latch output end of the second D trigger is used for outputting the short circuit indication signal;
the clock input end of the first D trigger is connected with the data latch output end of the second D trigger, the first D trigger is used for taking the short circuit indication signal output by the second D trigger as a clock sampling signal, the first data latch output end of the first D trigger DFF1 is used for outputting a short circuit high setting signal to the 1 setting end of the third D trigger, and the data latch output end of the third D trigger is used for outputting a short circuit signal of a charge pump boosting circuit;
the first NAND gate is respectively connected with the second data latch output end of the first D trigger and the reset end of the third D trigger, and is used for outputting a charge pump boosting circuit closing signal when the second data latch output end does not output a signal.
2. The short-circuit protection circuit for a charge pump voltage boosting circuit according to claim 1, wherein the short-circuit detection circuit is further configured to output a charge pump voltage boosting circuit short-circuit cancel signal when it is determined that the output voltage of the charge pump voltage boosting circuit is not less than the short-circuit detection threshold;
the time sequence trigger circuit is also used for receiving the short circuit cancel signal of the charge pump booster circuit and outputting a restart signal of the charge pump booster circuit so as to make the charge pump booster circuit work again.
3. The charge pump boost circuit short-circuit protection circuit of claim 1, further comprising: a first inverter, a second inverter, and a second NAND gate;
the data input end of the third D trigger DFF3 is connected with the output end of the second inverter, the input end of the second inverter is connected with the output end of the second NAND gate, the first input end of the second NAND gate is connected with the data latch output end of the third D trigger, the second input end of the second NAND gate is connected with the output end of the first inverter, and the input end of the first inverter is connected with the first output end of the short circuit detection circuit.
4. The charge pump boost circuit short-circuit protection circuit of claim 3, further comprising: a nor gate and a third inverter;
the 1-end of the second D trigger is grounded, the common end of the reset end of the second D trigger and the reset end of the first D trigger is connected with the output end of the NOR gate, the first input end of the NOR gate is connected with the output end of the third inverter, the second input end of the NOR gate is connected with the output end of the short-circuit protection time generating circuit, and the input ends of the short-circuit protection time generating circuit are respectively connected with the first data latch output end of the first D trigger and the 1-end of the third D trigger.
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| CN201910033147.3A CN109546623B (en) | 2019-01-14 | 2019-01-14 | Short-circuit protection circuit of charge pump boost circuit |
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| CN201910033147.3A CN109546623B (en) | 2019-01-14 | 2019-01-14 | Short-circuit protection circuit of charge pump boost circuit |
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| CN110557009B (en) * | 2019-09-11 | 2020-10-09 | 上海南芯半导体科技有限公司 | Four-phase overcurrent detection protection circuit of charge pump circuit and implementation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2861510A1 (en) * | 2003-10-24 | 2005-04-29 | Valeo Securite Habitacle | Supply line protecting device for electronic board, e.g. printed circuit, has control unit that drives MOSFET transistor to one state when mirror voltage of current is greater than or equal to mirror voltage of threshold current |
| CN103746342A (en) * | 2014-01-10 | 2014-04-23 | 成都芯源系统有限公司 | Boost converter, controller for boost converter and short-circuit protection method |
| CN203850823U (en) * | 2014-04-17 | 2014-09-24 | 济南芯驰能源科技有限公司 | Low-loss switch power supply output short circuit protection circuit |
| CN104639124A (en) * | 2013-11-08 | 2015-05-20 | 联芯科技有限公司 | Method and circuit for improving margin for setup time and hold time of input signal of time sequence device |
| CN105634260A (en) * | 2016-01-30 | 2016-06-01 | 深圳南云微电子有限公司 | Output short-circuit protection method and circuit |
| CN106803666A (en) * | 2015-11-26 | 2017-06-06 | 比亚迪股份有限公司 | Switching power supply control device and switching power supply |
| CN108923643A (en) * | 2018-07-18 | 2018-11-30 | 合肥工业大学 | A kind of restructural type boosting charge pump of no threshold voltage loss |
| CN209184234U (en) * | 2019-01-14 | 2019-07-30 | 上海艾为电子技术股份有限公司 | A kind of charge pump booster circuit short-circuit protection circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9906214B2 (en) * | 2014-09-22 | 2018-02-27 | Infineon Technologies Americas Corp. | Fault and short-circuit protected output driver |
-
2019
- 2019-01-14 CN CN201910033147.3A patent/CN109546623B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2861510A1 (en) * | 2003-10-24 | 2005-04-29 | Valeo Securite Habitacle | Supply line protecting device for electronic board, e.g. printed circuit, has control unit that drives MOSFET transistor to one state when mirror voltage of current is greater than or equal to mirror voltage of threshold current |
| CN104639124A (en) * | 2013-11-08 | 2015-05-20 | 联芯科技有限公司 | Method and circuit for improving margin for setup time and hold time of input signal of time sequence device |
| CN103746342A (en) * | 2014-01-10 | 2014-04-23 | 成都芯源系统有限公司 | Boost converter, controller for boost converter and short-circuit protection method |
| CN203850823U (en) * | 2014-04-17 | 2014-09-24 | 济南芯驰能源科技有限公司 | Low-loss switch power supply output short circuit protection circuit |
| CN106803666A (en) * | 2015-11-26 | 2017-06-06 | 比亚迪股份有限公司 | Switching power supply control device and switching power supply |
| CN105634260A (en) * | 2016-01-30 | 2016-06-01 | 深圳南云微电子有限公司 | Output short-circuit protection method and circuit |
| CN108923643A (en) * | 2018-07-18 | 2018-11-30 | 合肥工业大学 | A kind of restructural type boosting charge pump of no threshold voltage loss |
| CN209184234U (en) * | 2019-01-14 | 2019-07-30 | 上海艾为电子技术股份有限公司 | A kind of charge pump booster circuit short-circuit protection circuit |
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|---|---|
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