CN209169106U - A kind of precision precinct laser annealing device - Google Patents
A kind of precision precinct laser annealing device Download PDFInfo
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- CN209169106U CN209169106U CN201920153030.4U CN201920153030U CN209169106U CN 209169106 U CN209169106 U CN 209169106U CN 201920153030 U CN201920153030 U CN 201920153030U CN 209169106 U CN209169106 U CN 209169106U
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Abstract
The utility model provides a kind of accurate precinct laser annealing device, comprising: ontology, the ontology include upper and lower two accommodating spaces, are the first, second accommodating space；Laser beam emitting device launches the laser light source of different-waveband in the first accommodating space inner tip；Galvanometer unit is located in first accommodating space, receives laser light source and is transmitted；Lens unit is arranged on the joint face of first accommodating space and second accommodating space, sample stage is arranged on the pedestal of the second accommodating space inner bottom surface, for placing sample, the laser that the sample reception is transmitted from the lens unit, and the height of the pedestal can be adjusted.Solving annealing position cannot accurately select, annealing process complexity and uncontrollable, ineffective technical problem.The accurate selection for reaching freeboard region, focuses the technical effect that direct-fired mode obtains higher promotion in terms of annealing temperature and annealing rate by laser.
Description
Technical field
The utility model relates to technical field of semiconductors more particularly to a kind of accurate precinct laser annealing devices.
Background technique
Annealing is widely used in material modification and process optimization as a kind of technology generallyd use, main at present
The equipment used is (quick) thermal annealing furnace (pipe furnace), and material-to-be-heated or device is usually integrally placed at cavity (pipe furnace)
In, it is that heat radiation or light irradiate that using thermocouple, perhaps halogen lamp, which heats heating method to material, and what is generally used moves back
Stove heating temperature reaches as high as 1200~1500 DEG C, and the rate of heat addition (pipe furnace temperature) reaches as high as 150~200 DEG C/s.But
There are localities for this method for annealing, such as are considered based on stability, and maximum heating temperature can not continue to improve, be limited to simultaneously
Principle of heating, the rate of heat addition can not be promoted further.On the other hand, the annealing demand of some processes is not based on entire device,
But the partial region material in device, the integrally annealed of device can carry out unknown change to the material strips originally without annealing on the contrary
Change, so that complex technical process is uncontrollable.Therefore in the research and development and production process of certain fields, it is necessary to be changed using other techniques
Come in make up the limitation of annealing.
Present utility model application people has found that the prior art at least has the following technical problems:
Annealing position cannot be selected accurately in the prior art, annealing process complexity and uncontrollable, ineffective technology
Problem.
Utility model content
The utility model embodiment provides a kind of accurate precinct laser annealing device, solves position of annealing in the prior art
Setting accurately to select, annealing process complexity and uncontrollable, ineffective technical problem.
In view of the above problems, the utility model embodiment provides a kind of accurate precinct laser annealing device, described device
It include: ontology, the ontology includes upper and lower two accommodating spaces, wherein being located above is the first accommodating space, is located below
It is the second accommodating space；Laser beam emitting device, the laser beam emitting device are arranged in the first accommodating space inner tip,
Launch the laser light source of different-waveband；Galvanometer unit, the galvanometer unit is located in first accommodating space, described in reception
The laser light source of laser beam emitting device transmitting is simultaneously transmitted；Lens unit, the lens unit setting is in first accommodating
On the joint face of space and second accommodating space, the laser of the galvanometer unit transmission is received, and the laser is transmitted
To second accommodating space；Sample stage, the sample stage are arranged on the pedestal of the second accommodating space inner bottom surface, use
In place sample, the laser that the sample reception is transmitted from the lens unit, and, the height of the pedestal can be adjusted.
Preferably, the galvanometer unit includes: the first galvanometer unit, and the first galvanometer unit is located at first accommodating
The inner tip in space, it is corresponding with the emission port of the laser beam emitting device, receive swashing for the laser beam emitting device transmitting
Radiant is simultaneously transmitted；Second galvanometer unit, the second galvanometer unit are located at the centre inside first accommodating space
Place receives the light source that the first galvanometer unit transmits out, and is transmitted to the lens unit.
Preferably, described device further include: pedestal control device, the pedestal control device setting is in first accommodating
Space interior one side is connect with the pedestal, controls the base height.
Preferably, described device further include: the inside of second accommodating space is arranged in CCD unit, the CCD unit
The input terminal on top, the CCD unit is corresponding with the sample stage.
Preferably, described device further include: the top of the ontology is arranged in CCD viewing screen, the CCD viewing screen
Portion is connect with the CCD unit.
Preferably, described device further include: annealing heating unit, the annealing heating unit setting is in second accommodating
On space wall.
Preferably, described device further include: the top of the ontology is arranged in control screen, the control screen.
Preferably, described device further include: servo motor, the servo motor are connect with the galvanometer unit.
Preferably, the top of the ontology is the slope surface with tilt angle.
Said one or multiple technical solutions in the embodiment of the present application at least have following one or more technology effects
Fruit:
In a kind of accurate precinct laser annealing device provided by the embodiment of the utility model, described device includes: ontology, institute
Stating ontology includes upper and lower two accommodating spaces, wherein being located above is the first accommodating space, and underlying is the second accommodating
Space；Laser beam emitting device, the laser beam emitting device are arranged in the first accommodating space inner tip, launch different waves
The laser light source of section；Galvanometer unit, the galvanometer unit are located in first accommodating space, receive the laser beam emitting device
The laser light source of transmitting is simultaneously transmitted；Lens unit, lens unit setting is in first accommodating space and described the
On the joint face of two accommodating spaces, the laser of the galvanometer unit transmission is received, and the laser is transmitted through described second and is held
Between emptying；Sample stage, the sample stage is arranged on the pedestal of the second accommodating space inner bottom surface, for placing sample,
The laser that the sample reception is transmitted from the lens unit, and, the height of the pedestal can be adjusted.Free sky is reached
Between region accurate selection, for different annealed materials, select the laser of suitable wave band and type, focused by laser and directly added
The mode of heat obtains higher promotion in terms of annealing temperature and annealing rate, while anneal chamber and optics regulation chamber use
Separation design is, it can be achieved that the technical effect that (vacuum, N2 etc.) anneals under varying environment.It anneals in the prior art to solve
Position cannot accurately select, and annealing process is complicated and uncontrollable, and the annealing of some materials and device is needed in protective gas (such as nitrogen
Gas) or vacuum environment under carry out, temperature-fall period is very slow, ineffective technical problem.
The above description is merely an outline of the technical solution of the present invention, in order to better understand the skill of the utility model
Art means, and being implemented in accordance with the contents of the specification, and in order to allow above and other purpose, feature of the utility model
It can be more clearly understood with advantage, it is special below to lift specific embodiment of the present utility model.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is
Some embodiments of the utility model, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of accurate precinct laser annealing device of the utility model embodiment；
Fig. 2 is a kind of schematic illustration of accurate precinct laser annealing device in the utility model embodiment；
Fig. 3 is semiconductor laser chip structure schematic diagram in the utility model embodiment；
Fig. 4 is that non-absorbing window prepares schematic diagram in the utility model embodiment；
Fig. 5 is that counterdiffusion Quantum Well energy band changes schematic diagram in the utility model embodiment.
Description of symbols: ontology 1, the first accommodating space 2, the second accommodating space 3, laser beam emitting device 4, the first galvanometer
Unit 5, the second galvanometer unit 6, lens unit 7, sample stage 8, pedestal 9, CCD unit 10, CCD viewing screen 11 control screen
12, pedestal control device 13, annealing heating unit 14.
Specific embodiment
The utility model embodiment provides a kind of accurate precinct laser annealing device, anneals in the prior art for solving
Position cannot accurately select, annealing process complexity and uncontrollable, ineffective technical problem.
Technical solution general thought provided by the utility model is as follows:
Ontology, the ontology include upper and lower two accommodating spaces, wherein being located above is the first accommodating space, is located at
Lower section is the second accommodating space；Laser beam emitting device, the laser beam emitting device are arranged inside first accommodating space
The laser light source of different-waveband is launched on top；Galvanometer unit, the galvanometer unit are located in first accommodating space, connect
It receives the laser light source of the laser beam emitting device transmitting and is transmitted；Lens unit, lens unit setting is described the
On the joint face of one accommodating space and second accommodating space, the laser of the galvanometer unit transmission is received, and swash described
Light transmission is to second accommodating space；The base of the second accommodating space inner bottom surface is arranged in sample stage, the sample stage
On seat, for placing sample, the laser that the sample reception is transmitted from the lens unit, and, the height of the pedestal can be into
Row is adjusted.The accurate selection for having reached freeboard region selects swashing for suitable wave band and type for different annealed materials
Light focuses direct-fired mode by laser and obtains higher promotion in terms of annealing temperature and annealing rate, anneals simultaneously
Chamber and optics regulation chamber use separation design, it can be achieved that the technical effect that (vacuum, N2 etc.) anneals under varying environment.
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
Embodiment one
Fig. 1 is a kind of structural schematic diagram of accurate precinct laser annealing device of the utility model embodiment, please refers to figure
1, a kind of accurate precinct laser annealing device provided by the embodiment of the utility model, described device includes:
Ontology 1, the ontology 1 include upper and lower two accommodating spaces, wherein being located above is the first accommodating space 2, position
In lower section be the second accommodating space 3.
Specifically, ontology 1 divides for two spaces, respectively optics regulation chamber and annealing chamber is used, and realizes two
The subregion of a function has reached annealing chamber and optics regulation chamber using separation design, it can be achieved that (true under varying environment
Sky, N2 etc.) annealing.
Laser beam emitting device 4, the laser beam emitting device 4 are arranged in 2 inner tip of the first accommodating space, launch
The laser light source of different-waveband.
Specifically, laser is as a kind of very high light source of power density, it can be on the unit area of irradiation area
High power is concentrated, therefore for specific material, the laser light source of high-absorbility wave band is selected to be irradiated, it can be by luminous energy
It is quickly converted as thermal energy, achievees the effect that be rapidly heated, meanwhile, laser, can will as a kind of extraordinary light source of directionality
Light beam focuses to micron dimension, controls the three-dimensional position selection of light beam in very low range by high-velocity scanning galvanometer, realizes essence
Really control heating region.And in prior art semiconductor material and devices field, the main equipment to be used of annealing is (quick) heat
Material-to-be-heated perhaps device is usually integrally placed in cavity (pipe furnace) using thermocouple or halogen by annealing furnace (pipe furnace)
Lamp heats material, and heating method is that perhaps light irradiation can only carry out whole heating to material or device for heat radiation, together
When there are annealing temperature, there are the bottlenecks limitations such as the upper limit, cooling time be long.The device of the utility model embodiment utilizes laser
Characteristic realizes the effect accurately controlled, while launching the laser of different-waveband using the laser beam emitting device 4, for wait move back
The absorption efficiency of fiery material uses the laser light source of different-waveband (λ 1, λ 2, λ 3......), realizes that front end light source is adjustable.
Galvanometer unit, the galvanometer unit are located in first accommodating space 2, receive the laser beam emitting device 4 and send out
The laser light source penetrated simultaneously is transmitted.
Further, the galvanometer unit includes: the first galvanometer unit 5, and the first galvanometer unit 5 is located at described first
The inner tip of accommodating space 2, it is corresponding with the emission port of the laser beam emitting device 4, receive the laser beam emitting device hair
The laser light source penetrated simultaneously is transmitted；Second galvanometer unit 6, the second galvanometer unit 6 are located in first accommodating space 2
The middle in portion receives the light source that the first galvanometer unit 5 transmits out, and is transmitted to the lens unit.
Further, described device further include: servo motor, the servo motor are connect with the galvanometer unit.
Specifically, galvanometer unit is provided in first accommodating space 2, using described in galvanometer unit reception
The light source that laser beam emitting device 4 emits, is received and is transmitted to the laser light source using the galvanometer unit, specific works
Principle is as shown in Fig. 2, when the laser beam emitting device 4 uses different annealed materials the laser light source of different-waveband, institute
It states after the first galvanometer unit 5 receives the light source and is transferred to the second galvanometer unit 6, the second galvanometer unit 6 receives institute
It being transmitted again after stating the light source of the first galvanometer unit 5 sending, the galvanometer unit is connect by shaft with the servo motor,
The galvanometer unit is adjusted to change the angle of light source, realizes the accurate constituency to the laser.
The company of first accommodating space 2 and second accommodating space 3 is arranged in lens unit 7, the lens unit 7
In junction, the laser of the galvanometer unit transmission is received, and the laser is transmitted through second accommodating space 3.
It will be by first accommodating space specifically, adjusting the angle the light source being transmitted by the galvanometer unit
2 lens units 7 being directly arranged with second accommodating space 3, into second accommodating space 3, second accommodating
Space 3 is to carry out annealing reaction chamber.
Sample stage 8, the sample stage 8 is arranged on the pedestal 9 of 3 inner bottom surface of the second accommodating space, for placing
Sample, the laser that the sample reception is transmitted from the lens unit 7, and, the height of the pedestal 9 can be adjusted.
Further, described device further include: pedestal control device 13, the pedestal control device 13 setting is described the
One accommodating space, 2 interior side face, connect with the pedestal 9, controls 9 height of pedestal.
Further, described device further include: annealing heating unit 14, the annealing heating unit 14 setting is described the
On two accommodating spaces, 3 inner wall.
Further, described device further include: CCD unit 10, the CCD unit 10 are arranged in second accommodating space
3 inner tip, the input terminal of the CCD unit 10 are corresponding with the sample stage 8.
Specifically, sample stage 8, annealing heating unit 14 etc. are provided in second accommodating space 3, described
It anneals in two accommodating spaces 3, the laser light source is transmitted to the sample in the sample stage 8 by the lens unit 7
On, laser light source described in the sample reception is height-adjustable pedestal 9 since the sample stage 8 is lower, passes through the pedestal
Control device 13 controls the pedestal 9, according to the requirement of the annealed material, annealing process to the height of the pedestal 9
Degree is adjusted, to realize using the galvanometer unit and the pedestal control device 13, it can be achieved that X, Y, Z three-dimensional space
Precision selection, realizes the accurate constituency of annealed material, while adjusting laser annealing facula area size control annealing process.Pass through
Laser focuses direct-fired mode and obtains higher promotion, the annealing heating unit in terms of annealing temperature and annealing rate
14 preheat annealed material using light irradiation or thermocouple.In addition, being needed in the prior art after completing annealing process
Being cooled to after room temperature just can be carried out operates in next step, and due to the limitation of annealing process, the annealing of some materials and device needs
It is carried out under protective gas (such as nitrogen) or vacuum environment, temperature-fall period is very slow, and uses the utility model embodiment
Device carry out selective laser annealing only be directed to specific region, using laser focusing material or device are directly heated, greatly
Reduce temperature fall time greatly, improves production efficiency.
Further, described device further include: CCD viewing screen 11, the CCD viewing screen 11 are arranged in the ontology
1 top is connect with the CCD unit 10.
Further, described device further include: the top of the ontology 1 is arranged in control screen 12, the control screen 12
Portion.
Further, the top of the ontology 1 is the slope surface with tilt angle.
Specifically, being provided with control screen 12 and the realization of CCD viewing screen 11 to the dress at the top of the ontology 1
The control set, while being connect using the CCD viewing screen 11 with 10 signal of CCD unit, the CCD unit 10 is using high
Resolution view microscope group, by the CCD viewing screen 11 can realize to constituency precisely align and annealing process is observed
Technical effect.
Embodiment two
In order to preferably introduce the utility model a kind of accurate precinct laser annealing device technical characterstic and purposes, under
Face is illustrated the applicable cases of the utility model in conjunction with specific embodiments, please refers to Fig. 3-5.
It needs wafer being cleaved into chip size in semiconductor laser chip manufacturing process, as shown in figure 3, chip goes out
Light region concentrates in mqw active layer (1*100 μm of 2 order magnitude ranges) very small region, when single die light power reaches 20W
When, emitting cavity face optical power density is up to 20MW/cm2, generates a large amount of heat, Cavity surface is heated to cause material band gap to shrink to be formed
Light absorption, the generation catastrophic optical damage of output optical zone domain (Catastrophic Optical Mirror Degradation,
COMD) lead to device performance decline even damage failure, Quantum Well counterdiffusion, which can be used, by theoretical research prepares non-suction at present
Window technique is received, energy band modulation is carried out to Cavity surface near zone material, as shown in figure 4, gain region and window region deposit not respectively
With the medium layer film of stoichiometric ratio, by annealing, well layer barrier layer atom in active area Quantum Well is induced to occur mutually to expand
It dissipates, Quantum Well component changes, and forms counterdiffusion quantum well structure (such as Fig. 5) wherein, hv is photon energy, arrow in Fig. 5
Direction indicates that light beam, Eg0 and Eg1 indicate forbidden bandwidth, and, Eg1 > Eg0, Δ Eg indicate that forbidden band broadens degree.To increase chamber
Material band gap near face, is substantially improved COMD damage threshold, improves the light output efficiency and service life of chip.Due to this work
It is window region material nearby that heating anneal region is actually needed in skill, and laser chip size is smaller, and heating region size is in 100*
10*100 μm of 3 magnitudes, it is therefore desirable to the heating means with precision positions selection function.And in the utility model embodiment one
Device can satisfy process requirements, on the basis of common thermal annealing, for the suction of different deielectric-coating material on incident wavelength
Yield is different, uses laser light source (the direct semiconductor laser of different wave length or with semiconductor laser of Wavelength tunable
For the solid state laser of pumping source), by servo motor and optics microscope group, the window region that laser beam focusing is annealed in needs
(100*10*100 μm of 3 magnitudes) accurately modulate annealing process by adjusting laser output power and annealing time,
Realize the purpose of specific tiny area thermal annealing.To increase Cavity surface material band gap nearby, COMD damage threshold is substantially improved, mentions
The light output efficiency and service life of high chip.
Said one or multiple technical solutions in the embodiment of the present application at least have following one or more technology effects
Fruit:
In a kind of accurate precinct laser annealing device provided by the embodiment of the utility model, described device includes: ontology, institute
Stating ontology includes upper and lower two accommodating spaces, wherein being located above is the first accommodating space, and underlying is the second accommodating
Space；Laser beam emitting device, the laser beam emitting device are arranged in the first accommodating space inner tip, launch different waves
The laser light source of section；Galvanometer unit, the galvanometer unit are located in first accommodating space, receive the laser beam emitting device
The laser light source of transmitting is simultaneously transmitted；Lens unit, lens unit setting is in first accommodating space and described the
On the joint face of two accommodating spaces, the laser of the galvanometer unit transmission is received, and the laser is transmitted through described second and is held
Between emptying；Sample stage, the sample stage is arranged on the pedestal of the second accommodating space inner bottom surface, for placing sample,
The laser that the sample reception is transmitted from the lens unit, and, the height of the pedestal can be adjusted.Free sky is reached
Between region accurate selection, for different annealed materials, select the laser of suitable wave band and type, focused by laser and directly added
The mode of heat obtains higher promotion in terms of annealing temperature and annealing rate, while anneal chamber and optics regulation chamber use
Separation design is, it can be achieved that the technical effect that (vacuum, N2 etc.) anneals under varying environment.It anneals in the prior art to solve
Position cannot accurately select, and annealing process is complicated and uncontrollable, and the annealing of some materials and device is needed in protective gas (such as nitrogen
Gas) or vacuum environment under carry out, temperature-fall period is very slow, ineffective technical problem.
Although the preferred embodiment of the utility model has been described, once a person skilled in the art knows basic
Creative concept, then additional changes and modifications can be made to these embodiments.It is wrapped so the following claims are intended to be interpreted as
It includes preferred embodiment and falls into all change and modification of the scope of the utility model.
Obviously, those skilled in the art the utility model embodiment can be carried out various modification and variations without departing from
The spirit and scope of the utility model embodiment.In this way, if these modifications and variations of the utility model embodiment belong to this
Within the scope of utility model claims and its equivalent technologies, then the utility model is also intended to encompass these modification and variations and exists
It is interior.
Claims (9)
1. a kind of precision precinct laser annealing device, which is characterized in that described device includes:
Ontology, the ontology include upper and lower two accommodating spaces, wherein being located above is the first accommodating space, is located below
It is the second accommodating space；
Laser beam emitting device, the laser beam emitting device are arranged in the first accommodating space inner tip, launch different waves
The laser light source of section；
Galvanometer unit, the galvanometer unit are located in first accommodating space, receive swashing for the laser beam emitting device transmitting
Radiant is simultaneously transmitted；
Lens unit, the lens unit are arranged on the joint face of first accommodating space and second accommodating space,
The laser of the galvanometer unit transmission is received, and the laser is transmitted through second accommodating space；
Sample stage, the sample stage is arranged on the pedestal of the second accommodating space inner bottom surface, described for placing sample
The laser that sample reception is transmitted from the lens unit, and, the height of the pedestal can be adjusted.
2. device as described in claim 1, which is characterized in that the galvanometer unit includes:
First galvanometer unit, the first galvanometer unit are located at the inner tip of first accommodating space, send out with the laser
The emission port of injection device is corresponding, receives the laser light source of the laser beam emitting device transmitting and is transmitted；
Second galvanometer unit, the second galvanometer unit are located at the middle inside first accommodating space, receive described the
The light source that one galvanometer unit transmits out, and it is transmitted to the lens unit.
3. device as described in claim 1, which is characterized in that described device further include:
Pedestal control device, the pedestal control device are arranged in the first accommodating space interior side face, with the pedestal
Connection, controls the base height.
4. device as described in claim 1, which is characterized in that described device further include:
CCD unit, the CCD unit are arranged in the inner tip of second accommodating space, the input terminal of the CCD unit with
The sample stage is corresponding.
5. device as claimed in claim 3, which is characterized in that described device further include:
The top of the ontology is arranged in CCD viewing screen, the CCD viewing screen, connect with the CCD unit.
6. device as described in claim 1, which is characterized in that described device further include:
Annealing heating unit, the annealing heating unit are arranged on the second accommodating space inner wall.
7. device as described in claim 1, which is characterized in that described device further include:
Screen is controlled, the top of the ontology is arranged in the control screen.
8. device as described in claim 1, which is characterized in that described device further include:
Servo motor, the servo motor are connect with the galvanometer unit.
9. device as described in claim 1, which is characterized in that the top of the ontology is the slope surface with tilt angle.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021098828A1 (en) * | 2019-11-21 | 2021-05-27 | 深圳市中光工业技术研究院 | Laser chip manufacturing method, and laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021098828A1 (en) * | 2019-11-21 | 2021-05-27 | 深圳市中光工业技术研究院 | Laser chip manufacturing method, and laser |
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