CN209150487U - A kind of vertical cavity surface emitting laser - Google Patents
A kind of vertical cavity surface emitting laser Download PDFInfo
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- CN209150487U CN209150487U CN201821979422.8U CN201821979422U CN209150487U CN 209150487 U CN209150487 U CN 209150487U CN 201821979422 U CN201821979422 U CN 201821979422U CN 209150487 U CN209150487 U CN 209150487U
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Abstract
The utility model discloses a kind of vertical cavity surface emitting lasers, including the second reflecting layer, light emitting structure, the first reflecting layer, the first bonded layer, the second bonded layer, the second substrate, the first insulating layer, third electrode, the 4th electrode, second insulating layer, the first pad and the 4th pad.The utility model is conductively connected by third electrode and the 4th electrode and first electrode and second electrode, first electrode and second electrode to be extended out, it is connect again with the first pad and the second pad, therefore directly laser can be welded on pcb board by pad, routing is not needed, in addition, also the heat of laser is transmitted on pcb board by pad, to play good heat dissipation effect.
Description
Technical field
The utility model relates to technical field of semiconductors more particularly to a kind of vertical cavity surface emitting lasers.
Background technique
Vertical cavity surface emitting laser (Vertical-Cavity Surface-Emitting Laser, abbreviation VCSEL)
It is a kind of semiconductor, laser is projected perpendicular to top surface.
Vertical cavity surface emitting laser is to have the advantages that (1) resonance using a kind of wider new type light source in recent years
Chamber is small, is also easy to produce microcavity effect, Low threshold lasing；(2) resonant cavity is shorter, thus longitudinal mode spacing is very big, dynamic modulation frequency
It is high；(3) the circularly symmetric type in active area section, beam directionality is good, easily couples；(4) light direction is suitble to perpendicular to substrate plane
In parallel optical interconnecting and information processing；(5) device volume is small, can form two-dimensional array laser to high-density；(6) monolithic extension
Growth is formed, convenient for the quality examination and screening to growth material, high yield rate.
The packaging technology of existing vertical cavity surface emitting laser is close with LED packaging technology, requires using routing technique,
Technique is cumbersome, and finished product is poor by gold thread heat dissipation effect, and make laser uses power limited.
The utility model proposes a kind of new vertical cavity surface emitting laser manufacture crafts, can be directly welded on pcb board,
Packaging technology is simple, is radiated by pad, and effect is more preferable, can improving laser device use power.
Summary of the invention
Technical problem to be solved by the utility model is to provide a kind of vertical cavity surface emitting laser, do not need to beat
Line can be directly welded on pcb board, and good heat dissipation effect.
In order to solve the above-mentioned technical problem, the utility model provides a kind of vertical cavity surface emitting laser, comprising:
Second reflecting layer；
Light emitting structure on second reflecting layer is set, and the light emitting structure includes division center, exposed region and first
Electrode, the division center include the first semiconductor layer set gradually, active layer, the second semiconductor layer, current barrier layer, thoroughly
Bright conductive layer and second electrode, the exposed region are etched to the first semiconductor layer, and the first electrode setting is led the first half
On body layer and it is centered around the surrounding of division center, the first electrode and division center mutually insulated；
It is successively set on the first reflecting layer on light emitting structure, the first bonded layer, the second bonded layer, the second substrate and first
Insulating layer, and first insulating layer extends on the first reflecting layer；
Third electrode and the 4th electrode on the first insulating layer is set, and the third electrode is through the first insulating layer and prolongs
It extends in first electrode, the 4th electrode is through the first insulating layer and extends in second electrode, third electrode and the 4th electricity
Pole insulation；
Second insulating layer on third electrode, the 4th electrode and the second substrate is set；
The first pad and the second pad over the second dielectric is set, the first pad prolongs to be connect with third electrode, and second
Pad is connect with the 4th electrode, the first pad and the second pads insulated.
As an improvement of the above scheme, the reflectivity in second reflecting layer is lower than the reflectivity in the first reflecting layer.
As an improvement of the above scheme, the low 1-5% of reflectivity in first reflecting layer of luminance factor in second reflecting layer.
As an improvement of the above scheme, first reflecting layer and the second reflecting layer are made of reflective insulant.
As an improvement of the above scheme, the first electrode, second electrode, third electrode and the 4th electrode are by conductive gold
Category is made.
As an improvement of the above scheme, first pad and the second pad are made of Ni, Au, Sn or AuSn.
Implement the utility model, has the following beneficial effects:
A kind of vertical cavity surface emitting laser provided by the utility model, instead by the second reflecting layer, light emitting structure, first
Penetrate layer, the first bonded layer, the second bonded layer, the second substrate, the first insulating layer, third electrode, the 4th electrode, second insulating layer,
The mutual cooperation of first pad and the 4th pad, wherein the utility model passes through third electrode and the 4th electrode for first electrode
It is conductively connected with second electrode, first electrode and second electrode is extended out, then connect with the first pad and the second pad,
Therefore directly laser can be welded on pcb board by pad, does not need routing, in addition, also passing through pad for laser
Heat be transmitted on pcb board, to play good heat dissipation effect.
Specifically, the utility model passes through the mutual cooperation of the first insulating layer and second insulating layer, wherein the first insulating layer
By extending on the first reflecting layer, to ensure that first electrode, second electrode, third electrode and the 4th electrode can be mutual
Insulation, in order to which first electrode and second electrode are extended out by third electrode and the 4th electrode.Due to the of the utility model
One reflecting layer is made by insulating materials, not only has the function of reflection light, and there are also the effects of insulation, therefore the first insulating layer is only
It need to extend on the first reflecting layer.
In addition, the first pad and the second pads insulated are avoided swashing by cooperation of the utility model by second insulating layer
Light device short circuit.
Further, the reflectivity in the second reflecting layer of the utility model is lower than the reflectivity in the first reflecting layer.Only when
When the reflectivity in two reflecting layer is less than the reflectivity in first layer reflecting layer, the light that active layer issues could generate concussion, Xiang Jiguang
Device resonant cavity is the same, is emitted after so that light is reached predetermined power.
Further, the low 1-5% of reflectivity in first reflecting layer of luminance factor 30 in the second reflecting layer.When beyond above-mentioned
When value range, the light that active layer occurs cannot reach predetermined power.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model vertical cavity surface emitting laser；
Fig. 2 is the schematic diagram of light emitting structure；
Fig. 3 is the top view of Fig. 2；
Fig. 4 is that the schematic diagram after third electrode and the 4th electrode is formed on light emitting structure；
Fig. 5 is the top view of Fig. 4；
Fig. 6 is the schematic diagram formed after the first pad and the second pad on light emitting structure；
Fig. 7 is the top view of Fig. 6.
Specific embodiment
It is practical new to this below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer
Type is described in further detail.
Referring to Fig. 1, the utility model provides a kind of vertical cavity surface emitting laser, including the second reflecting layer 11, shines
Structure 20, the first reflecting layer 30, the first bonded layer 40, the second bonded layer 50, the second substrate 60, the first insulating layer 70, third electricity
Pole 81, the 4th electrode 82, second insulating layer 90, the first pad 83 and the 4th pad 84.
Referring to figs. 2 and 3, the light emitting structure 20 includes division center, exposed region and first electrode 27.Wherein, institute
State division center include the first semiconductor layer 21 set gradually, active layer 22, the second semiconductor layer 23, current barrier layer 24,
Transparency conducting layer 25 and second electrode 26.The exposed region along the etching edge of light emitting structure to the first semiconductor layer 21,
The first electrode 27 is arranged on the first semiconductor layer 21 of exposed region, and the first electrode 26 is centered around division center
Surrounding, wherein first electrode 26 and division center mutually insulated.Preferably, the division center is located at the several of light emitting structure
What center, and first electrode 27 is looped around the surrounding of division center.Wherein, first electrode 26 can be closing structure or not be closed
Structure.
It should be noted that the transparency conducting layer 25 run through the current barrier layer 24, and with the second semiconductor layer 23
Connection.
Light emitting structure 20 includes the first semiconductor layer 21, active layer 22, the second semiconductor layer being sequentially arranged on substrate 10
23 and it is etched to the exposed region 24 of the first semiconductor layer 21.
Preferably, first semiconductor layer 21 of the utility model and the second semiconductor layer 23 are gallium nitride-based semiconductor
Layer, active layer 22 are gallium nitride base active layer 22.In addition, the first semiconductor layer 21 provided by the utility model, the second semiconductor
The material of layer 23 and active layer 22 can also be other materials, be not particularly limited to this application.Wherein, the first semiconductor layer
21 be n type semiconductor layer, and the second semiconductor layer 23 is p type semiconductor layer.
The material of the utility model transparency conducting layer 25 is indium tin oxide, but not limited to this.In indium tin oxide indium and
The ratio of tin is 70-99:1-30.Preferably, the ratio of indium and tin is 95:5 in indium tin oxide.Transparent lead favorably is improved in this way
The conductive capability of electric layer, prevents carrier from flocking together, and also improves the light extraction efficiency of chip.
The first electrode and second electrode of the utility model are by two kinds or two kinds in Cr, Al, Ti, Pt, Au, Ni and Sn
The above metal is made.
First reflecting layer 30 is covered on light emitting structure.Specifically, first reflecting layer 30 is covered on the first half
Conductor layer 21, second electrode 26, transparency conducting layer 25, on current barrier layer 24, and extends to division center at first electrode 27
On side wall.Wherein, first reflecting layer 30 is made of the reflecting material insulating.First reflecting layer 30 of the utility model will hair
Photo structure insulate with the first bonded layer 40, and the light metallic reflection that active layer is occurred, and avoids first bonded layer 40 etc.
Light is absorbed, the light extraction efficiency of laser is improved.
Preferably, first reflecting layer 30 is made of the different insulating materials of two or more refractive index.It is more excellent
, first reflecting layer 30 is by SiO2、Si3N4、TiO2、MgF2、CaF2、SrF2、BaF2、ZnSe、ZnS、ZrO2And Al2O3In
Two or more is made.
First bonded layer 40 is arranged on the first reflecting layer 30, and second bonded layer 50 is arranged in the first bonded layer
On 40, wherein the first bonded layer 40 and the second bonded layer 50 are whole by bonding together to form one, and the second substrate 60 is fixed on hair
On photo structure.Specifically, first bonded layer 40 and the second 50 layers of bonding are made of Au, Sn or AuSn.
Second substrate 60 is arranged on the second bonded layer 50, is used to support light emitting structure, convenient for removing the first substrate.
Preferably, the second substrate 60 is non-conductive silicon wafer.The size of second substrate 60 and the size of the first substrate etc. are big.
First insulating layer 70 is arranged on the second substrate 60, and first insulating layer 70 extends to the first reflecting layer
On 30.Wherein, the structure that the first insulating layer 70 extends on the first reflecting layer 30 includes two parts, and a part is located at first electrode
27 top, a part is located at the top of second electrode 26, to form the first channel dielectric layer.Preferably, first insulation
Layer 70 is by SiO2、Si3N4And Al2O3One or more of be made.
The third electrode 81 and the 4th electrode 82 are arranged on the first insulating layer 70, wherein third electrode 81 runs through first
Insulating layer 70 simultaneously extends in first electrode 27, and the 4th electrode 82 is through the first insulating layer 70 and extends to second electrode 26
On.Specifically, third electrode 81 from the surface of the first insulating layer 70 along the first insulating layer of part 70 in first electrode 27 into
Row extends and connect with first electrode 27, and the 4th electrode 82 is from the surface of the first insulating layer 70 along the part in second electrode 26
First insulating layer 70 extend and connect with second electrode 26.Preferably, third electrode and the 4th electrode by Cr, Al, Ti,
Two or more metal in Pt, Au, Ni and Sn is made.
First electrode 27 and second electrode 26 are conductively connected by the utility model by third electrode 81 and the 4th electrode 82,
First electrode 27 and second electrode 26 to extend out, it is convenient for subsequent progress pad connection.
Since need could be with across the first bonded layer 30 and the second bonded layer 40 for third electrode 81 and the 4th electrode 82
One electrode is connected with second electrode, and the first bonded layer and the second bonded layer are conductive structure, short-circuit in order to prevent, this is practical new
Type passes through third electrode and the 4th electrode by the way that the first channel dielectric layer is arranged in the top of first electrode and second electrode
First channel dielectric layer so that third electrode and the 4th electrode be insulated, and protects the third and fourth electrode.
Referring to fig. 4 and Fig. 5, first is equipped between the third electrode 81 and second electrode 82 on 70 surface of the first insulating layer
Isolation channel 71.Wherein, first isolation channel 71 is cyclic structure, and third electrode 81 and the 4th electrode 82 are isolated.Into one
Step ground, the 4th electrode 82 of the utility model are circle, and third electrode 81 is the concentric circles of the 4th electrode 82.
The second insulating layer 90 is arranged on third electrode 81, the 4th electrode 82 and the first isolation channel 71, by third
Electrode 81 and the insulation of the 4th electrode 82.Preferably, the second insulating layer 90 is by SiO2、Si3N4And Al2O3One or more of
It is made.
Referring to Fig. 6 and Fig. 7, first pad 83 and the second pad 84 are arranged in second insulating layer 90, wherein first
Pad 83 is through second insulating layer 90 and extends on third electrode 81, and the second pad 84 is through second insulating layer 90 and extends to
On 4th electrode 84, the first pad 83 and the second pads insulated 84.It should be noted that the first pad 83 and the second pad 84 it
Between be equipped with the second isolation channel 91, the first pad 83 and the second pad 84 are isolated.Preferably, first pad 83 and second
Pad 84 is made of one or both of Ni, Au and Sn metal.For the ease of welding and radiating uniformly, the first pad and the
The area equation of two pads.
The back side of the first semiconductor layer 21 is arranged in second reflecting layer 11.Wherein, the reflectivity in the second reflecting layer 11
Lower than the reflectivity in the first reflecting layer 30.Only when the reflectivity in the second reflecting layer is less than the reflectivity in first layer reflecting layer,
The light that active layer issues could generate concussion, the same to laser resonant cavity, be emitted after so that light is reached predetermined power.Preferably,
The low 1-5% of reflectivity in first reflecting layer of luminance factor 30 in the second reflecting layer 11.When exceeding above range value, active layer hair
Raw light cannot reach predetermined power.
Preferably, the second reflecting layer 11 is made of the different insulating materials of two or more refractive index.More preferably,
Two reflecting layer 11 are by SiO2、Si3N4、TiO2、MgF2、CaF2、SrF2、BaF2、ZnSe、ZnS、ZrO2And Al2O3In two kinds or two
Kind or more be made.
First electrode and second electrode are extended out by setting the first pad and the second pad by the utility model,
The laser of the utility model can be directly welded on pcb board, and packaging technology is simple.Further, the laser of the utility model
Device can be radiated by the first pad and the second pad, to improve the heat dissipation effect of laser, and then improving laser device
Use power.
Correspondingly, the utility model additionally provides a kind of production method of vertical cavity surface emitting laser, including following step
It is rapid:
S101, the first substrate is provided；
The material of first substrate can be sapphire, silicon carbide or silicon, or other semiconductor materials, the present embodiment
In substrate be preferably Sapphire Substrate.First substrate of the utility model is used to form light emitting structure.
S102, light emitting structure is formed on the first substrate；
The light emitting structure includes division center, exposed region and first electrode.Wherein, the division center includes successively
The first semiconductor layer, active layer, the second semiconductor layer, current barrier layer, transparency conducting layer and the second electrode being arranged.It is described naked
Reveal region along the etching edge of light emitting structure to the first semiconductor layer, the first the half of exposed region are arranged in the first electrode
In conductor layer, and the first electrode is centered around the surrounding of division center, wherein first electrode and division center mutually insulated.
Preferably, the division center is located at the geometric center of light emitting structure, and first electrode is looped around the surrounding of division center.Its
In, first electrode can be closing structure or not closing structure.
It should be noted that the transparency conducting layer runs through the current barrier layer, and it is connect with the second semiconductor layer.
Light emitting structure includes the first semiconductor layer being sequentially arranged on substrate, active layer, the second semiconductor layer and etching
To the exposed region of the first semiconductor layer.
Preferably, first semiconductor layer of the utility model and the second semiconductor layer are gallium nitride-based semiconductor, are had
Active layer is gallium nitride base active layer.In addition, the first semiconductor layer provided by the utility model, the second semiconductor layer and active layer
Material can also be other materials, be not particularly limited to this application.Wherein, the first semiconductor layer is n type semiconductor layer, the
Two semiconductor layers are p type semiconductor layer.
The material of the utility model transparency conducting layer is indium tin oxide, but not limited to this.Indium and tin in indium tin oxide
Ratio be 70-99:1-30.Preferably, the ratio of indium and tin is 95:5 in indium tin oxide.Electrically conducting transparent is favorably improved in this way
The conductive capability of layer, prevents carrier from flocking together, and also improves the light extraction efficiency of chip.
The first electrode and second electrode of the utility model are by two kinds or two kinds in Cr, Al, Ti, Pt, Au, Ni and Sn
The above metal is made.
S103, the first reflecting layer and the first bonded layer are sequentially formed on light emitting structure；
The reflecting material of one layer of insulation is deposited, on light emitting structure using the method for magnetron sputtering or vapor deposition to form first
Reflecting layer.Specifically, first reflecting layer be covered on the first semiconductor layer, first electrode, second electrode, transparency conducting layer,
On current barrier layer, and extend on the side wall of division center.Wherein, first reflecting layer is by the reflecting material system that insulate
At.Light emitting structure and the first bonded layer are insulated in first reflecting layer of the utility model, and the light that active layer is occurred
Metallic reflection avoids first bonded layer etc. from absorbing light, improves the light extraction efficiency of laser.
Preferably, first reflecting layer is made of the different insulating materials of two or more refractive index.More preferably,
First reflecting layer is by SiO2、Si3N4、TiO2、MgF2、CaF2、SrF2、BaF2、ZnSe、ZnS、ZrO2And Al2O3In two kinds
Or it two or more is made.
First bonded layer is formed on the first reflecting layer using the method for magnetron sputtering or vapor deposition.First bonded layer by
Au, Sn or AuSn are made.
S104, the second bonded layer is formed on the second substrate；
Second bonded layer is formed on the second substrate using the method for magnetron sputtering or vapor deposition.Second bonded layer by
Au, Sn or AuSn are made.
S105, the first bonded layer and the second bonded layer are bonded, the second substrate is fixed on light emitting structure；
It binds together the first bonded layer and the second bonded layer to form connection using the method that thermocompression bonding is bound,
In, pressure 900-1400kg, temperature is 280-300 DEG C, time 10-30min.In order to eliminate stress, temperature from room temperature by
It is gradually heated to 280-300 DEG C, after the completion of bonding binding, temperature is gradually decreased for after room temperature, pressure is removed.
Specifically, what the metal in the first bonded layer and the second bonded layer can be excessive overflows when bonding temperature is higher than 300 DEG C
Out, it sticks on the side wall of light emitting structure, causes chip that short circuit occurs；When bonding temperature is less than 280 DEG C, the first bonded layer
It cannot be melted with the metal in the second bonded layer, it is difficult to carry out bonding binding.When bonding pressure is less than 900kg, first
Can there are gap and micropore between bonded layer and the second metal bonding layer, the two cannot completely link together, and will increase core
The voltage of piece；When bonding pressure is greater than 1400kg, the pressure being applied on light emitting structure is excessive, light emitting structure occurs disconnected
It splits, influences the photoelectric properties of light emitting structure, in addition, pressure is excessive to will increase metal in the first bonded layer and the second metal bonding layer
Spill-out, cause chip short-circuit, further, the thickness of the first bonded layer and the second bonded layer can be reduced, and both be influenced
Connection.
Preferably, bonding temperature is 280 DEG C, 285 DEG C, 290 DEG C, 295 DEG C or 300 DEG C；Bonding pressure be 900kg,
950kg, 1000kg, 1050kg, 1100kg, 1150kg, 1200kg, 1250kg, 1300kg, 1350kg or 1400kg.
First bonded layer and the second bonded layer shape by way of bonding of the utility model are integral, by the second lining
Bottom is fixed on light emitting structure.Second substrate of the utility model is used to support light emitting structure, convenient for removing the first substrate.It is preferred that
, the second substrate is non-conductive silicon wafer.The size of second substrate and the size of the first substrate etc. are big.
S106, the first insulating layer being formed on the second substrate, first insulating layer extends on the first reflecting layer,
In, the extension of the first insulating layer is located at the top of first electrode and second electrode；
It should be noted that before forming the first insulation layer, it is further comprising the steps of:
Second substrate is performed etching, forms at least two the first grooves and the second groove, first groove is located at the
The top of one electrode, second groove are located at the top of second electrode；
Continue to etch along the bottom of the first groove and the second groove, be etched to the surface in the first reflecting layer, forms third
Groove and the 4th groove.
Preferably, the width of third groove is less than the width of the first groove, and the width of the 4th groove is less than the second groove
Width.
Preferably, the first groove of the utility model and the second groove are concentric structure.
Specifically, depositing one in the surface of the second substrate, the first groove, the second groove, third groove and the 4th groove
Layer insulating materials, to form the first insulating layer.
First insulating layer is arranged on the second substrate, and first insulating layer extends on the first reflecting layer.Its
In, the structure that the first insulating layer extends on the first reflecting layer includes two parts, a part of top for being located at first electrode, and one
Quartile is in the top of second electrode, to form the first channel dielectric layer.Preferably, first insulating layer is by SiO2、Si3N4With
Al2O3One or more of be made.
S107, third electrode and the 4th electrode are formed on the first insulating layer, the third electrode is exhausted through described first
Edge layer is simultaneously connect with first electrode, and the 4th electrode is connect through first insulating layer and with second electrode；
It should be noted that before forming third electrode and the 4th electrode, it is further comprising the steps of: absolutely to described first
Edge layer performs etching, and is etched to the surface of first electrode and second electrode, forms the 5th groove on the first electrode, in the second electricity
It is extremely upper to form the 6th groove.Wherein, there is the first insulating layer on the side wall of the 5th groove and the 6th groove.
Specifically, being deposited in the first insulating layer, the 5th groove and the 6th groove using the method for magnetron sputtering or vapor deposition
Metal, to form third electrode and the 4th electrode.Wherein, third electrode is arranged the first insulating layer and connect with first electrode, the
It is connect on first insulating layer of four electrodes setting and with second electrode.Preferably, third electrode and the 4th electrode by Cr, Al,
Two or more metal in Ti, Pt, Au, Ni and Sn is made.
First electrode and second electrode are conductively connected by the utility model by third electrode and the 4th electrode, by first
Electrode and second electrode extend out, are convenient for subsequent progress pad connection.
Due to third electrode and the 4th electrode need across the first bonded layer and the second bonded layer could with first electrode and
Second electrode connection, and the first bonded layer and the second bonded layer are conductive structure, it is short-circuit in order to prevent, the utility model by
The first channel dielectric layer is arranged in the top of first electrode and second electrode, and third electrode and the 4th electrode is made to pass through the first insulation
The third and fourth electrode so that third electrode and the 4th electrode be insulated, and is protected in layer channel.
The first isolation channel is equipped between the third electrode and second electrode of the first surface of insulating layer of the utility model.Wherein,
First isolation channel is cyclic structure, by third electrode and the 4th electrode isolation.Further, the 4th of the utility model
Electrode is circle, and third electrode is the concentric circles of the 4th electrode.
S108, form second insulating layer on third electrode and the 4th electrode, the second insulating layer by third electrode and
4th electrode insulation；
Specifically, the deposition of insulative material on third electrode, the 4th electrode and the first isolation channel, to form the second insulation
Layer.The second insulating layer is by third electrode and the 4th electrode insulation.Preferably, the second insulating layer is by SiO2、Si3N4With
Al2O3One or more of be made.
S109, the first pad and the second pad are formed over the second dielectric, first pad is exhausted through described second
Edge layer is simultaneously connect with third electrode, and second pad is connect through the second insulating layer and with the 4th electrode；
It should be noted that before forming the first pad and the second pad, it is further comprising the steps of: to second insulating layer
It performs etching, forms the first hole and the second hole.
Specifically, over the second dielectric, deposited metal in the first hole and the second hole, to form the first pad and the
Two pads.Wherein, the first pad is connect with third electrode, and the second pad is connect with the 4th electrode, the first pad and the second pad
Insulation 84.It should be noted that being equipped with the second isolation channel between the first pad and the second pad, the first pad and second are welded
Disk isolation.Preferably, first pad 83 and the second pad 84 are made of one or both of Ni, Au and Sn metal.
S110, the first substrate of removal；
First substrate is removed using laser-stripping method, the first semiconductor layer is exposed.
S111, the second reflecting layer is formed on the first semiconductor layer.
The reflecting material of one layer of insulation is deposited on light emitting structure using the method for magnetron sputtering or vapor deposition.Wherein, second
The reflectivity in reflecting layer is lower than the reflectivity in the first reflecting layer.Only when the reflectivity in the second reflecting layer is less than first layer reflecting layer
Reflectivity when, active layer issue light could generate concussion, it is the same to laser resonant cavity, after so that light is reached predetermined power out
It penetrates.Preferably, the low 1-5% of reflectivity in first reflecting layer of luminance factor 30 in the second reflecting layer 11.When beyond above range value
When, the light that active layer occurs cannot reach predetermined power.
Preferably, the second reflecting layer is made of the different insulating materials of two or more refractive index.More preferably, second
Reflecting layer is by SiO2、Si3N4、TiO2、MgF2、CaF2、SrF2、BaF2、ZnSe、ZnS、ZrO2And Al2O3In two kinds or two kinds with
On be made.
First electrode and second electrode are extended out by setting the first pad and the second pad by the utility model,
The laser of the utility model can be directly welded on pcb board, and packaging technology is simple.Further, the laser of the utility model
Device can be radiated by the first pad and the second pad, to improve the heat dissipation effect of laser, and then improving laser device
Use power.
Above disclosed is only a kind of preferred embodiment of the utility model, certainly cannot be practical to limit with this
Novel interest field, therefore equivalent variations made according to the claim of the utility model still belong to what the utility model was covered
Range.
Claims (6)
1. a kind of vertical cavity surface emitting laser characterized by comprising
Second reflecting layer；
Light emitting structure on second reflecting layer is set, the light emitting structure includes division center, exposed region and first electrode,
The division center includes the first semiconductor layer set gradually, active layer, the second semiconductor layer, current barrier layer, transparent leads
Electric layer and second electrode, the exposed region are etched to the first semiconductor layer, and the first electrode is arranged in the first semiconductor layer
Go up and be centered around the surrounding of division center, the first electrode and division center mutually insulated；
The first reflecting layer, the first bonded layer, the second bonded layer, the second substrate and the first insulation being successively set on light emitting structure
Layer, and first insulating layer extends on the first reflecting layer；
Third electrode and the 4th electrode on the first insulating layer is set, and the third electrode is through the first insulating layer and extends to
In first electrode, the 4th electrode is through the first insulating layer and extends in second electrode, and third electrode and the 4th electrode are exhausted
Edge；
Second insulating layer on third electrode, the 4th electrode and the second substrate is set；
The first pad and the second pad over the second dielectric is set, and the first pad prolongs to be connect with third electrode, the second pad
It is connect with the 4th electrode, the first pad and the second pads insulated.
2. vertical cavity surface emitting laser as described in claim 1, which is characterized in that the reflectivity in second reflecting layer is low
Reflectivity in the first reflecting layer.
3. vertical cavity surface emitting laser as claimed in claim 2, which is characterized in that the luminance factor in second reflecting layer
The low 1-5% of the reflectivity in the first reflecting layer.
4. vertical cavity surface emitting laser as claimed in claim 3, which is characterized in that first reflecting layer and the second reflection
Layer is made of reflective insulant.
5. vertical cavity surface emitting laser as described in claim 1, which is characterized in that the first electrode, second electrode,
Three electrodes and the 4th electrode are made of conductive metal.
6. vertical cavity surface emitting laser as described in claim 1, which is characterized in that first pad and the second pad are equal
It is made of Ni, Au, Sn or AuSn.
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|---|---|---|---|
| CN201821979422.8U CN209150487U (en) | 2018-11-27 | 2018-11-27 | A kind of vertical cavity surface emitting laser |
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| CN201821979422.8U CN209150487U (en) | 2018-11-27 | 2018-11-27 | A kind of vertical cavity surface emitting laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109449754A (en) * | 2018-11-27 | 2019-03-08 | 佛山市国星半导体技术有限公司 | A kind of vertical cavity surface emitting laser and preparation method thereof |
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2018
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109449754A (en) * | 2018-11-27 | 2019-03-08 | 佛山市国星半导体技术有限公司 | A kind of vertical cavity surface emitting laser and preparation method thereof |
| CN109449754B (en) * | 2018-11-27 | 2023-12-01 | 佛山市国星半导体技术有限公司 | Vertical cavity surface emitting laser and manufacturing method thereof |
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