CN107306012A - Vertical cavity laser element and its manufacture method - Google Patents
Vertical cavity laser element and its manufacture method Download PDFInfo
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- CN107306012A CN107306012A CN201710251625.9A CN201710251625A CN107306012A CN 107306012 A CN107306012 A CN 107306012A CN 201710251625 A CN201710251625 A CN 201710251625A CN 107306012 A CN107306012 A CN 107306012A
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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Abstract
The application is related to vertical cavity laser element and its manufacture method.Specifically, the vertical cavity laser element includes：First conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer, they are sequentially formed on the first reflector with this；Insulation current limiting layer, insulation current limiting layer formation is on the second conductive-type semiconductor layer；Transparency electrode, transparency electrode covering runs through opening and current-limiting layer, and is contacted via through opening with the second conductive-type semiconductor layer；And second reflector, second reflector formation is on the transparent electrodes.In including corresponding at least one of part of opening for the part corresponding to opening be in contact with each other in opening, transparency electrode and the second conductive-type semiconductor layer：Along the first resistor region of the inner circumferential arrangement through opening, and the second resistance region being arranged on the central area of opening.
Description
Technical field
The present invention relates to such as vertical cavity surface emitting laser (VCSEL：vertical cavity surface
Emitting laser) as vertical cavity laser element, and the method for manufacturing this vertical cavity laser element.
Background technology
Vertical cavity surface emitting laser be have be used for cause light vertically resonance arrive substrate surface, and cause light along perpendicular to
The semiconductor laser of the structure of the direction outgoing of substrate surface.For example, patent document 1 (No. 5707742 Japan Patent) is public
Opened a kind of vertical cavity surface emitting laser, the vertical cavity surface emitting laser in the surface of nitride semiconductor layer at least
Include on one：Insulating barrier with opening, set on the insulating layer to cover the transparency electrode of opening and via transparent
Electrode is arranged on the speculum of overthe openings.By the reflection of the opening and luminescent layer face each other that are placed in middle transparency electrode
Mirror constitutes chamber.Further, patent document 2 (2000-277852 Japanese Patent Application Laid-Open) discloses a kind of surface launching
Semiconductor laser.
The content of the invention
However, in conventional vertical cavity surface emitting lasers, translucent or euphotic electrode the refractive index in outgoing opening
Less than its peripheral region, and in the absence of horizontal limiting structure.Moreover, because via semitransparent electrode (such as ito film) from
The outside of outgoing opening performs electric current injection towards opening center, so the current density in open central portion is due to ito film
Sheet resistance and driving when reduce.Therefore, being generated in vertical cavity surface emitting laser along edge of opening has annular
Areas of high current density, thus adversely causes multimode oscillation.
The present invention is carried out in view of the above problems.There can be single horizontal mode oscillation it is an object of the invention to provide one kind
Vertical cavity laser element or device.
According to an aspect of the present invention, a kind of vertical cavity laser element includes：First reflector, the first reflector shape
Into on substrate；Semiconductor structure layer, semiconductor structure layer formation is on the first reflector, and the semiconductor structure layer includes the
The semiconductor layer of the semiconductor layer of one conductivity type, active layer and second conductivity type opposite with the first conductivity type；Insulation current
Limiting layer, insulation current limiting layer formation is on the semiconductor layer of the second conductivity type；Through opening, it should exist through opening formation
In current-limiting layer and through current-limiting layer；Transparency electrode, transparency electrode covering runs through opening and current-limiting layer, and
Contacted via through opening with the semiconductor layer of the second conductivity type；And second reflector, second reflector formation is transparent
On electrode.In the part corresponding to opening be in contact with each other in opening, transparency electrode and the semiconductor of the second conductivity type
Layer include corresponding at least one of part of opening：Along the first resistor region of the inner circumferential arrangement through opening, and
It is arranged in the second resistance region on the central area of opening.First resistor region has the resistance than second resistance region
It is worth high resistance.
Brief description of the drawings
Fig. 1 be schematically illustrate according to the first embodiment of the invention, with 4 × 4 arrays set 16 surface launchings
The overall perspective view of the construction of the vertical cavity surface emitting laser of laser；
Fig. 2 is to schematically illustrate line X-X interceptions, vertical cavity surface emitting laser the part along in Fig. 1
Fragmentary cross-sectional view；
Fig. 3 is the part for schematically illustrating a part surrounded by the line Y in Fig. 2, vertical cavity surface emitting laser
Profile；
Fig. 4 is the entirety for illustrating the construction of vertical cavity surface emitting laser according to the first embodiment of the invention
Top view；
Fig. 5 A to Fig. 5 C are respectively to be used to illustrate that vertical cavity surface emitting laser according to the first embodiment of the invention exists
The integral part profile of a part for construction during manufacture；
Fig. 6 A to Fig. 6 C are respectively to be used to illustrate that vertical cavity surface emitting laser according to the first embodiment of the invention exists
The integral part profile of a part for construction during manufacture；
Fig. 7 is the overall portion for schematically illustrating vertical cavity surface emitting laser second embodiment of the invention
Subsection；
Fig. 8 is the integral part profile according to the vertical cavity surface emitting laser of comparative example；
Fig. 9 A to Fig. 9 D are respectively to be used to illustrate that vertical cavity surface emitting laser second embodiment of the invention exists
The integral part profile of a part for construction during manufacture；
Figure 10 A to Figure 10 F are respectively to be used to illustrate vertical cavity surface emitting laser second embodiment of the invention
The integral part profile of a part for construction during manufacture；
Figure 11 is the entirety for schematically illustrating the vertical cavity surface emitting laser according to third embodiment of the present invention
Fragmentary cross-sectional view；
Figure 12 A and Figure 12 B are respectively to be used to illustrate the vertical cavity surface emitting laser according to third embodiment of the present invention
The integral part profile of a part for construction during manufacture；And
Figure 13 is to schematically illustrate the vertical cavity surface-emitting laser of one including according to the embodiment of the present invention
The overall perspective view of the construction of the surface emitting laser array white light source of device.
Embodiment
Vertical cavity surface emitting laser (hereinafter, being also called surface-emitting laser for short) is will be described with reference to the accompanying drawings, is made
For the example of the vertical cavity laser element according to the present invention.Be described below with accompanying drawing, substantially the same or equivalent part
It will be represented by identical reference.
【First embodiment】
Fig. 1 is to be arranged as exemplified with 16 surface-emitting lasers according to the first embodiment of the invention with 4*4 arrays
The overall perspective view of the surface-emitting laser 10A of luminescence unit outward appearance.Fig. 2 is to schematically illustrate the line X-X along in Fig. 1
The fragmentary cross-sectional view of interception, single surface-emitting laser 10 part.
As shown in Fig. 2 surface-emitting laser 10 has sandwich construction, the sandwich construction is for example including the first conductive reflection
The active layer 17 and p-type semiconductor layer 19 of device 13, n-type semiconductor layer 15 including quantum well layers, they are sequentially formed with this
On the electrically-conductive backing plate 11 including GaN (gallium nitride).The first reflector 13 in sandwich construction, and including n-type semiconductor layer
15th, active layer 17 (active layer includes quantum well layers) and the semiconductor structure layer SMC of p-type semiconductor layer 19, by GaN base half
Conductor is constituted.
Surface-emitting laser 10 also includes insulation current limiting layer 21, the reflector of transparent conductive electrode 23 and second, it
Be sequentially formed at this in the p-type semiconductor layer 19 in semiconductor structure layer SMC.
Current-limiting layer 21, which has, runs through opening OP1.Transparency electrode 23 is formed in current-limiting layer 21 and p-type semiconductor layer
19 top, so as to cover run through opening OP1 and, contacted with p-type semiconductor layer 19.Current-limiting layer 21 is hindered to except through opening
The electric current injection in the p-type semiconductor layer 19 in region outside mouth OP1.In opening OP1, electric current is partly led via p-type
Body layer 19 is injected into active layer 17 from transparency electrode 23.
As shown in Fig. 2 the P electrode 27P formation for Injection Current is around opening OP1, to be electrically connected to
Transparency electrode 23.P pad electrodes 29P formation is around opening OP1, to be passed through second reflector 25 that insulate, to be electrically connected
It is connected to P electrode 27P.Thus, transparency electrode 23 can be electrically connected to external device (ED) via P electrode 27P.
As shown in Fig. 2 N electrode 27N formation is on the skew surface of substrate 11, (surface is reflected positioned at active layer 17 and first
Between device 13), to be passed through insulation current limiting layer 21.N electrode 27N formation is around P pad electrodes 29P, to be electrically connected to n
Type semiconductor layer 15.N pad electrodes 29N formation is around P pad electrodes 29P, to be passed through second reflector 25 that insulate, to be electrically connected
It is connected to N electrode 27N.Thus, n-type semiconductor layer 15 can be electrically connected to external device (ED) via N pad electrodes 29N.
In the case where being placed in centre through opening OP1 and active layer 17, the first reflector 13 and second of face each other is anti-
Part between emitter 25 constitutes chamber 20.
Inside chamber 20, the current-limiting layer for being formed directly into transparency electrode 23 lower section runs through opening OP1 (transparency electrodes
Interface between 23 and semiconductor structure (SMC)) correspond to laser beam exits window.Laser beam is from the side of the first reflector 13 or
The side alternative one transmitting of two reflector 25.
In the present embodiment, the first reflector 13 is formed to include the distributed Bradley of GaN base semiconductor multi layer film
Lattice reflector (DBR).For example, 40 couples of GaN/InAlN can be stacked as forming the first reflector 13 with tegillum.Second reflector 25 is by shape
As the distributed Bragg reflector including multilayer dielectric film.Second reflector 25 and the first reflector 13 make semiconductor junction
Structure layer SMC is placed in centre, and configuration resonances structure.First reflector 13 and the second reflector 25 are configured to, by appropriate
Two films of the adjustment with different refractivity repeatedly in alternately laminated multilayer film to quantity, their material, they
Thickness etc., to obtain the first reflector 13 and the desired conductive characteristic of the second reflector 25, insulation characterisitic and reflectivity.For
Dielectric reflective device, the example of dielectric foil material can include：Metal or semimetallic oxide, and such as A1N, AlGaN,
Nitride as GaN, BN and SiN.Dielectric reflective device can be laminated at least two with different refractivity by the cycle
Thin dielectric film is (for example, SiO2/Nb2O5、SiO2/ZrO2、SiO2/ A1N or Al2O3/Nb2O5To) obtain.
Fig. 3 is the part for the part for schematically illustrating the surface-emitting laser 10 surrounded by the broken line shown in Fig. 2
Profile.
Semiconductor structure layer SMC by n-type semiconductor layer 15 including quantum well layers active layer 17 and p-type semiconductor layer
19 form, and the active layer 17 and p-type semiconductor layer 19 of n-type semiconductor layer 15 including quantum well layers are sequentially formed at the with this
On one reflector 13.In the present embodiment, each layer in the first reflector 13 and semiconductor structure layer SMC respectively has
AlxInyGa1-x-yN(0<x<1,0<y<1,0<x+y<1) composition.For example, the first reflector 13 has following structure, wherein,
The low-refraction semiconductor layer of the multiple alternately laminated composition with AlInN, and the high-index semiconductor with GaN layer group
(to).In the present embodiment, active layer 17 has following quantum well structures, wherein, it is alternately laminated to be used as one group (to)
Composition with InGaN well layer (not shown), and the composition with GaN barrier layer (not shown).N-type semiconductor layer 15 has
By constituting for GaN, and p-type impurity is used as comprising Si.P-type semiconductor layer 19 have GaN composition, and comprising such as Mg this
The n-type impurity of sample.Thus, n-type semiconductor layer 15 and p-type semiconductor layer 19 have reciprocal conductivity type.Moreover, semiconductor
Structure sheaf SMC can be designed as the launch wavelength to 450nm with 400nm.
First reflector 13 and semiconductor structure layer SMC for example by metal aoxidize chemical vapour deposition technique (mocvd method) Lai
Formed.Note, cushion (not shown) can be formed between the reflector 13 of substrate 11 and first.
Example for the constituent material of current-limiting layer 21 can include：Such as SiO2、Ga2O3、AI2O3And ZrO2This
The oxide of sample, and nitride as such as SiN, A1N and AlGaN.Preferably, SiO2For in current-limiting layer 21.
The thickness of current-limiting layer 21 be 5nm to 1000nm, and preferably 10nm to 300nm.
The example of constituent material for transparent conductive electrode 23, with translucency can include：(indium tin is aoxidized ITO
Thing), IZO (doping In ZnO), AZO (doping Al ZnO), GZO (doping Ga ZnO), ATO (doping Sb SnO2)、FTO
(doping F SnO2), NTO (doping Nb TiO2) and ZnO.Preferably, ITO is used in transparency electrode 23.Transparency electrode 23
Thickness be 3nm to 100nm, and preferably greater than 20nm.Transparency electrode 23 by electron beam evaporation technique or can for example splash
Technology is penetrated to deposit.
Fig. 4 is the transparency electrode run through in opening OP1 for illustrating the current-limiting layer 21 in surface-emitting laser 10
23 overall top perspective composition, such as while the illustration of the second reflector 25 is omitted from the side of the second reflector 25
Figure.
As shown in figure 4, preferably having the circle of a diameter of 1 μm to 15 μm (being preferably 3 μm to 10 μm) through opening OP1
Shape so that can be by equidistantly setting the distance of beam center to obtain Gaussian beam.This allows the uniform of active layer 17
Electric current injects the uniform limitation with light beam.Note, can be such as oval with shape than circular through opening OP1
Shape, polygon or close circular such shape.
As shown in Figure 3 and Figure 4, along the first resistor region formed through opening OP1 edge in current-limiting layer 21
24A has annular.In other words, have in the opening portion of the transparency electrode 23 contacted in opening OP1 with p-type semiconductor layer 19
Have：Along the first resistor region 24A of the inner circumferential arrangement through opening OP1, and it is arranged on opening OP1 central area
Second resistance region 24B.First resistor region 24A has the resistance value higher than second resistance region 24B.
First resistor region 24A is for example constructed in following this mode：Including such as SiO2Such transparent insulation material
Multiple island ILD of material are dispersedly arranged in p-type semiconductor layer 19 in transparent conductive electrode 23 as such as ITO.At this
In embodiment, multiple SiO2Island ILD (island region) is formed along the edge through opening OP1 of current-limiting layer 21, is made
It must be produced in the 24A of first resistor region higher than the second resistance region 24B (core for running through opening) without island ILD
Contact resistance value (interface of transparency electrode 23 subtracts relative to the area of p-type semiconductor layer 19 compared with the 24B of second resistance region
It is small).So, electric current distribution during driving can be controlled as, in the central part height through opening and through opening
It is low in edge part.In other words, in the present embodiment, the central part without island ILD has low contact resistance value, and thus increase is driven
Current density when dynamic, so as to increase the refractive index in the central part of opening in transparency electrode 23.Except SiO2Outside,
The example for preferably comprising material for multiple island ILD can for example include：Such as Ga2O3、Al2O3And ZrO2Oxide
, dielectric with translucency.
Island ILD can be formed by the method shown in Fig. 5 A to Fig. 5 C.First, as shown in Figure 5A, in p-type semiconductor layer
Formed in current-limiting layer 21 on 19 in the step of running through opening OP1, through opening OP1 in following this mode by stripping skill
Art is formed：SiO2The pin of opening inwall in current-limiting layer 21 has the thickness being gradually reduced in p-type semiconductor layer 19.Such as
Shown in Fig. 5 A, the pin of the opening inwall in current-limiting layer 21 has conical profile shape.Then, as shown in Figure 5 B, only revealing
While the pin of the opening inwall gone out in current-limiting layer 21, corrosion-resisting pattern RES is formed as to the inwall and electric current of covering opening
Limiting layer 21.Then, as shown in Figure 5 C, the thin pin part exposed is removed by etching.Multiple island ILD can be by adjusting the etching
The rate of etch of step is formed in p-type semiconductor layer 19.
Alternatively, island ILD can be formed by the method shown in Fig. 6 A to Fig. 6 C.First, with the step shown in Fig. 5 A
Rapid identical, as shown in Figure 6A, the opening inwall limited current to by lift-off technology in layer 21 is formed as with conical profile shape.
Then, as shown in Figure 6B, by corrosion-resisting pattern (RES) shape while the whole inwall of the opening in only exposing current-limiting layer 21
As covering current-limiting layer 21.Then, as shown in Figure 6 C, by etching undercut (etching undercut), to cut out
The opening inwall exposed.Multiple island ILD can be by adjusting the rate of etch of the etching step, to be formed in p-type semiconductor layer 19
On extended area above.
【Second embodiment】
Fig. 7 is that the part for schematically illustrating a surface-emitting laser 10 second embodiment of the invention is cutd open
Face figure.
As shown in fig. 7, the surface-emitting laser 10 of second embodiment has and the part essence in first embodiment
Upper identical part, except not forming island in the first resistor region 24A of transparency electrode in the first embodiment, and thoroughly
The average thickness of first resistor region 24A in prescribed electrode 23 is less than second resistance region 24B average thickness.It will not retouch below
State the construction and function of the part represented by same reference numerals.
In the present embodiment, by causing the thickness of transparency electrode 23 as such as ITO to be less than first resistor region
In 24A (in the adjacent edges of opening), and more than in second resistance region 24B (central area of opening), to give transparent electricity
Sheet resistance (sheet resistance) Rs distributions of pole 23.It is higher that there is ito transparent electrode 23 part of smaller thickness to have
Sheet resistance, and ito transparent electrode have bigger thickness part have lower sheet resistance Rs (that is, sheet resistance Rs1>Piece electricity
Hinder Rs2).Thus, current density during increase driving in the 24B of second resistance region, and because temperature rises and reduces band gap.
Therefore, the refractive index of the transparency electrode 23 of the central area of increase opening.In other words, transparency electrode can be formed in the opening
23 refractive-index-guiding structure.By as described in just in the domain of current injection area first resistor region 24A and second electricity
The resistance difference between the 24B of region is hindered, single horizontal mode oscillation can be stablized.ITO has part (the second resistance area of bigger thickness
Domain 24B) flat formation (interface with the second reflector 25) preferably as shown in Figure 7.Because, for example as shown in Figure 8
The formation of spherical transparent electrode 23 cause continuous thickness in the second reflector 25 being arranged in this transparency electrode 23 point
Cloth, thus causes phase place change.
There is the transparency electrode of thickness distribution in first resistor region 24A and second resistance region 24B as shown in Figure 7
23, it can be formed by the method shown in Fig. 9 A to Fig. 9 D.First, as shown in Figure 9 A, by the first electricity for transparency electrode
The ito film 23A in resistance region is formed as, covering current-limiting layer 21 and the p-type semiconductor layer 19 in opening OP1.Then, such as
, will be anti-while ito film 23A in the p-type semiconductor layer 19 in the opening in only exposing current-limiting layer 21 shown in Fig. 9 B
Corrosion figure case RES is formed as covering the ito film 23A on current-limiting layer 21.Then, as shown in Figure 9 C, by sputtering technology in electric current
Exposing in the p-type semiconductor layer 19 in the opening of limiting layer 21 deposits ITO on ito film 23A, has bigger thickness to be formed
Ito film 23B.Then, as shown in fig. 9d, corrosion-resisting pattern is removed by lift-off technology.So, in first resistor region 24A and
There is the transparency electrode 23 of thickness distribution in two resistance region 24B, can be formed in p-type semiconductor layer 19.In other words, can be with
Obtain following thickness distribution：In the part that transparency electrode 23 corresponds to opening, second resistance region 24B thickness is substantially permanent
Determine, and the edge through opening OP1 of first resistor region 24A thickness direction persistently reduces.
Alternatively, there is the transparency electrode 23 of thickness distribution in first resistor region 24A and second resistance region 24B,
It can be formed by the method shown in Figure 10 A to Figure 10 F.First, as shown in Figure 10 A, before current-limiting layer is formed, by
Sputtering technology forms the ito film 23A in the first resistor region for transparency electrode 23, to cover the p-type semiconductor layer exposed
19.Then, as shown in Figure 10 B, in order to only leave the ito film 23A in p-type semiconductor layer 19 by the electric current to be formed later
Part at the region at the opening center of limiting layer, being in for ito film 23A is removed by using predetermined corrosion-resisting pattern RES etchings
By the part at the region for forming current-limiting layer.Then, as illustrated in figure 10 c, corrosion-resisting pattern RES is formed as into covering electric current limit
Ito film in p-type semiconductor layer 19 and its peripheral region (that is, by for the region in first resistor region) in the opening of preparative layer.
Then, as shown in Figure 10 D, the SiO for current-limiting layer 21 is formed in p-type semiconductor layer 192Film, so as to predetermined thickness
Degree.Then, as shown in figure 10e, corrosion-resisting pattern RES is removed by lift-off technology, opened to be formed to run through in current-limiting layer 21
Mouth OP1, and expose the ito film in p-type semiconductor layer 19.Then, as shown in figure 10f, ITO is deposited by sputtering technology, so as to
Cover and exposed ito film 23A, the p-type semiconductor layer around it in the p-type semiconductor layer 19 in the opening of current-limiting layer 21
And current-limiting layer 21, to form ito film second resistance region 24B, with bigger thickness for transparency electrode 23
23B.So, there is the transparency electrode 23 of thickness distribution in first resistor region 24A and second resistance region 24B, can be with shape
Into in p-type semiconductor layer 19.
【3rd embodiment】
Figure 11 is schematically illustrate a surface-emitting laser 10 according to third embodiment of the present invention one
The fragmentary cross-sectional view divided.
As shown in figure 11, the surface-emitting laser 10 of the 3rd embodiment has and the part essence in first embodiment
Upper identical part, except not forming island in the first resistor region 24A of transparency electrode 23 in the first embodiment, is passed through
The distribution of resistance for wearing transparency electrode 23 in opening OP1 is uniform, and be caught high-resistance first resistor region 24A and not by
So that high-resistance second resistance region 24B is arranged on the surface of the p-type semiconductor layer 19 in opening OP1 (with transparent electricity
The interface of pole 23) on.The construction of component and the function that are represented by same reference numerals will not described below.
In the present embodiment, the surface of p-type semiconductor layer in second resistance region 24B (central area of opening) not
Corona treatment is subjected to, but corona treatment is subjected in first resistor region 24A (near edge of opening).This is in the opening
P-type semiconductor layer 19 surface (interface with transparency electrode 23) on produce distribution of resistance.This distribution of resistance can be as follows
Obtain.For example, the surface of p-GaN semiconductor layers 19 is subjected to such as corona treatment, ion implanting or electron beam irradiation so
Processing, to exit many nitrogen as the element lighter than gallium.So, nitrogen area of absence NV (that is, nitrogen is purposefully created
The not enough component atoms area of absence of component atoms), thus part forms p-n junction.This increase resistance value, so as to realize resistance point
Cloth.This method is used through handling the phenomenon that GaN surfaces have the series resistance of increase compared with not illuminated GAN surfaces.Pass through
First electricity of the interface in p-type semiconductor layer 19 in electric current such as region in the marginal portion of opening as described in just
Cause resistance difference between resistance region 24A and the second resistance region 24B of center that is open, single horizontal mode oscillation can be stablized.
As the example of this corona treatment, as illustrated in fig. 12, current limit is formed in p-type semiconductor layer 19
Layer 21 and through opening OP1.Then, by corrosion-resisting pattern (not shown) be formed as cover current-limiting layer through opening OP1 in p
Core (that is, to be the region in second resistance region) in type semiconductor layer 19.Thereafter, as shown in Figure 12 B, about one
Under the pressure of Pascal, with 50W RF power argon gas, in by for the p-type semiconductor at the region in first resistor region
Layer 19 performs corona treatment up to 10 seconds to a few minutes.So, first resistor region that can be in the marginal portion of opening
Nitrogen area of absence NV is formed in 24A, the resistance value in the first resistor region is higher than in the central area through opening OP1
Second resistance region 24B resistance value.
Alternatively, present embodiment can combine above-mentioned first embodiment and second embodiment, transparency electrode pair
First resistor region that should be in the part of opening is embodied.More specifically, in the first embodiment shown in Fig. 3,
The p-type semiconductor that nitrogen area of absence NV can be formed below the island directly in the first resistor region 24A of transparency electrode 23
In layer 19, but omit its diagram.In the second embodiment shown in Fig. 7, nitrogen area of absence NV can be formed：Directly have
The p-type of the lower section of transparency electrode 23 in the first resistor region 24A of the thickness smaller than second resistance region 24B thickness is partly led
In body layer 19, but omit its diagram.
Nitrogen vacancy for checking the presence or absence of the nitrogen area of absence NV being subjected in the p-GaN semiconductor layers of corona treatment
Verification method can include following methods.
【First method：Verified by measuring contact resistance】
When by p-GaN surfaces are performed Ar corona treatments (>50W, more than 60 seconds) form common p-type contact
During layer, the contact resistance of generation is from about 1 × 10-2Qcm2And dramatically deteriorate (such as 1Qcm2, plasma damage compared with
When big, this value indicates completely insulated).The reason for this point, is as follows.The exoelectron of nitrogen hunger Ga atoms is mended as free electron
Repay the vacancy in p-GaN.If nitrogen vacancy concentration is higher, p-GaN is changed into n-type semiconductor, and whole diode structure
Essentially form NPN structures (transistor).Thus, insulation characterisitic is shown.
【Second method：Verified by measurement surface potential】
Can be by measuring semiconductor surface potential, to recognize that carrier type and carrier on semiconductor surface are close
Degree.For example, currently used cyclic voltammetry etching analyzer for example enables the electronics for being produced by Ar corona treatments
The quantitative assessment of concentration and the determination of nitrogen vacancy concentration.
【Third method：Verified by x-ray photoelectron spectroscopy】
When being directed to the GaN surface inspections Ga that whether there is Ar plasma irradiatings with x-ray photoelectron spectroscopy (XPS) device
3d core light time spectrums, about 0meV is offset to about hundreds of with reference to the level that can depend on corona treatment towards high energy side
meV.This offset can be used for quantitative assessment nitrogen vacancy concentration.
According to the above-mentioned present invention, the surface-emitting laser 10A of 4 × 4 arrays for example can be used for acquisition surface launching and swash
Light device array white light source.For example, as shown in figure 13, fluorescent glass plate 30 to be attached to surface-emitting laser 10A substrate 11
(the first reflector) side.Thereafter, installing plate 31 is prepared.Installing plate 31 includes highly heat-conductive material as such as Si, AlN or SiC,
And with following installation surface, set on the installation surface correspond respectively to surface-emitting laser 10A P pads electrode with
The corresponding P connection electrodes 31P of N pad electrodes and corresponding N connection electrodes 31N.Thereafter, by surface-emitting laser 10A semiconductor
Structure sheaf SMC (the second reflector, P pads electrode and N pads electrode) side chip reversing is arranged on the mounting surface of installing plate 31, with
Obtain surface emitting laser array white light source.Note, from radiating efficiency and the viewpoint of wires design, Au-Sn Eutectic Layers are preferred
Ground is used in mounting technique.The present invention for example can apply to include the high intensity and high luminous intensity distribution light of vehicle head lamp
Source and the multi-channel signal source for sensor.
According to above-mentioned surface-emitting laser of the invention, it can not only reduce the threshold current of surface-emitting laser in itself
(power consumption), and the yield rate of surface-emitting laser can be improved.Specifically, the present invention can aid in the face for reducing array
The change of threshold current between the luminescence unit of multiple surface-emitting lasers in emitting laser.It is possible to further carry
There is the vertical cavity laser element through stablizing single horizontal mode oscillation for a kind of.
Note, present invention can also apply to be such as construed as including with the active of multiple quantum trap (MQW) structure
The vertical cavity laser element of the surface-emitting laser of active layer 17 in layer 17, rather than any embodiment of the present invention.Though
Right above-mentioned semiconductor structure layer SMC includes GaN (gallium nitride) base semiconductor, but crystallographic system not limited to this.Above-mentioned embodiment can be with
As one sees fit modification and with combination with one another.
The application is based on Japanese 2016-082565 patent applications, is herein incorporated to this application in the way of citation.
Claims (7)
1. a kind of vertical cavity laser element, the vertical cavity laser element includes：
First reflector, first reflector formation is on substrate；
Semiconductor structure layer, semiconductor structure layer formation is on first reflector, and the semiconductor structure layer includes the
First semiconductor layer of one conductivity type, the second the half of active layer and second conductivity type opposite with first conductivity type lead
Body layer；
Insulation current limiting layer, insulation current limiting layer formation is on second semiconductor layer；
, should be through opening formation in the current-limiting layer and through the current-limiting layer through opening；
Transparency electrode, transparency electrode covering is described to run through opening and the current-limiting layer, and the transparency electrode is via described
Contacted through opening with second semiconductor layer；And
Second reflector, second reflector is formed in the transparency electrode, wherein,
Run through the part corresponding to the opening be in contact with each other in opening, the transparency electrode and described the second half described
Conductor layer includes corresponding at least one of part of the opening：First arranged along the inner circumferential through opening
Resistance region, and the second resistance region on the central area of opening is arranged in, and
The first resistor region has the resistance value higher than the resistance value in the second resistance region.
2. vertical cavity laser element according to claim 1, wherein, opening is run through in the first resistor region along described
The inner circumferential be formed ring-type.
3. vertical cavity laser element according to claim 1, wherein, in the opening that corresponds to of the transparency electrode
The first resistor region in part includes：Form multiple islands on second semiconductor layer, and the multiple island
Respectively include the dielectric with translucency.
4. vertical cavity laser element according to claim 1, wherein, in the opening that corresponds to of the transparency electrode
The average thickness in the first resistor region in part is less than the average thickness in the second resistance region.
5. vertical cavity laser element according to claim 4, wherein, in the opening that corresponds to of the transparency electrode
The constant thickness in the second resistance region in part, and the thickness in the first resistor region runs through opening towards described
Edge persistently reduce.
6. vertical cavity laser element according to claim 1, wherein, correspond to described open in second semiconductor layer
The first resistor region in the part of mouth is component atoms area of absence, second described in the component atoms area of absence
Component atoms in semiconductor layer are not enough compared with the second resistance region.
7. a kind of method for manufacturing vertical cavity laser element, this method comprises the following steps：
The first reflector is formed on substrate；
Semiconductor structure layer is formed on first reflector, what the semiconductor structure layer included the first conductivity type the first half leads
Second semiconductor layer of body layer, active layer and second conductivity type opposite with first conductivity type；
Insulation current limiting layer is formed on second semiconductor layer；
Formed in the current-limiting layer through opening with through the current-limiting layer；
Transparency electrode is formed as to covering is described to run through opening and the current-limiting layer, and via it is described through opening with it is described
Second semiconductor layer is contacted；And
The second reflector is formed in the transparency electrode, wherein,
It is described between the step of the step of running through opening described in being formed in the current-limiting layer and the formation transparency electrode
Method comprises the following steps：
By protect pattern be formed as covering second semiconductor layer in the core for running through and exposing in opening, and
Corona treatment is performed to the exposed portion of second semiconductor layer around the core, so that described the
In the part corresponding to the opening of two semiconductor layers, first resistor region is formed as along the inner circumferential through opening
Arrangement, and second resistance region is formed as being arranged in it is described on the central area of opening, and with than described first
The small resistance value of the resistance value of resistance region.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016082565A JP6990499B2 (en) | 2016-04-18 | 2016-04-18 | Manufacturing method of vertical resonator type light emitting element and vertical resonance type light emitting element |
| JP2016-082565 | 2016-04-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107306012A true CN107306012A (en) | 2017-10-31 |
| CN107306012B CN107306012B (en) | 2020-11-03 |
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| CN201710251625.9A Active CN107306012B (en) | 2016-04-18 | 2017-04-18 | Vertical cavity light emitting device and method of manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9935427B2 (en) |
| EP (1) | EP3244497B1 (en) |
| JP (1) | JP6990499B2 (en) |
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| CN113224642A (en) * | 2021-04-19 | 2021-08-06 | 深圳市德明利光电有限公司 | Surface emitting laser and manufacturing method thereof |
| CN113454860A (en) * | 2019-02-21 | 2021-09-28 | 斯坦雷电气株式会社 | Vertical cavity surface light emitting device |
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| KR102551471B1 (en) * | 2018-07-27 | 2023-07-06 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | A surface-emitting laser device and light emitting device including the same |
| WO2020026573A1 (en) * | 2018-07-31 | 2020-02-06 | ソニー株式会社 | Surface emitting semiconductor laser |
| WO2023181716A1 (en) * | 2022-03-24 | 2023-09-28 | ソニーグループ株式会社 | Surface-emitting laser, surface-emitting laser array, and electronic device |
| GB202209141D0 (en) * | 2022-06-22 | 2022-08-10 | Ams Sensors Asia Pte Ltd | Recess-etched regrown vcsel |
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Also Published As
| Publication number | Publication date |
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| CN107306012B (en) | 2020-11-03 |
| EP3244497A1 (en) | 2017-11-15 |
| JP6990499B2 (en) | 2022-01-12 |
| US9935427B2 (en) | 2018-04-03 |
| US20170302057A1 (en) | 2017-10-19 |
| JP2017195212A (en) | 2017-10-26 |
| EP3244497B1 (en) | 2019-03-13 |
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