CN209119104U - A kind of array substrate, flexible display panels, mosaic screen - Google Patents
A kind of array substrate, flexible display panels, mosaic screen Download PDFInfo
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- CN209119104U CN209119104U CN201920116523.0U CN201920116523U CN209119104U CN 209119104 U CN209119104 U CN 209119104U CN 201920116523 U CN201920116523 U CN 201920116523U CN 209119104 U CN209119104 U CN 209119104U
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Abstract
The utility model relates to show equipment technical field, disclose a kind of array substrate, flexible display panels, mosaic screen, the array substrate includes flexible substrate substrate, the multiple electroplated electrodes for being formed in flexible substrate substrate side and thin film transistor (TFT) TFT device layer, it is formed on flexible substrate substrate and the one-to-one through-hole of electroplated electrode, conductive material is filled in through-hole, flexible substrate substrate is formed with away from the side of multiple electroplated electrodes and binds electrode correspondingly with through-hole, and each binding electrode is electrically connected by the conductive material in through-hole with electroplated electrode.Thin film transistor (TFT) TFT device layer is directly guided to flexible base board by the setting of electroplated electrode, conductive material and binding electrode and connect away from the side of thin film transistor (TFT) TFT device layer with flexible circuit board by the array substrate, and then realizes the design of pole narrow frame or Rimless.
Description
Technical field
The utility model relates to show equipment technical field, in particular to a kind of array substrate, flexible display panels, splicing
Screen.
Background technique
Currently, the array substrate of flexible display panels includes viewing area and rim area, as shown in Figure 1, rim area is arranged
There is what is be electrically connected with the grid line 01 of viewing area and the one-to-one correspondence of data line 02 to be fanned out to cabling Fanout and binding electrode, ties up
Fixed electrode is electrically connected the transmission for realizing scanning signal and data-signal with flexible circuit board 03.And make large area flexible splicing
Screen needs the flexible display panels of narrow frame to splice, and being fanned out to cabling Fanout and binding electrode for rim area is unfavorable for large area
The production of mosaic screen.
Based on this, how to realize the Flexible Displays product of more narrow frame or Rimless, be those skilled in the art urgently
The technical issues of solution.
Utility model content
The utility model provides a kind of array substrate, flexible display panels, mosaic screen, and above-mentioned array substrate may be implemented
The design of pole narrow frame or Rimless, and then the production of the mosaic screen of large area may be implemented.
In order to achieve the above objectives, the utility model the following technical schemes are provided:
A kind of array substrate, including flexible substrate substrate, be formed in flexible substrate substrate side multiple plating electricity
Pole and thin film transistor (TFT) TFT device layer are formed on the flexible substrate substrate and lead to correspondingly with the electroplated electrode
Hole, the through-hole is interior to be filled with conductive material, and the flexible substrate substrate is formed with away from the side of the multiple electroplated electrode
Electrode is bound correspondingly with the through-hole, and each binding electrode passes through conductive material in its corresponding through-hole and its
The corresponding electroplated electrode electrical connection.
In above-mentioned array substrate, it is formed with multiple electroplated electrodes on flexible substrate substrate and is used for transmission display signal
Thin film transistor (TFT) TFT device layer, thin film transistor (TFT) TFT device layer are electrically connected with electroplated electrode, flexible substrate substrate and each electricity
The opposite region of plated electrode is formed with through-hole, and conductive material is filled in through-hole, and flexible substrate substrate deviates from multiple electroplated electrodes
Side be formed with and bind electrode correspondingly with the through-hole, binding electrode passes through the conductive material in its corresponding through-hole
Corresponding electroplated electrode electrical connection, above structure can pass through electroplated electrode, conductive material and the setting for binding electrode
Thin film transistor (TFT) TFT device layer is directly guided into side and external circuit of the flexible base board away from thin film transistor (TFT) TFT device layer
Flexible circuit board connection, realize thin film transistor (TFT) TFT device layer to display signal transmission, due to binding electrode be directly arranged
Deviate from the side of thin film transistor (TFT) TFT device layer in flexible substrate substrate, and eliminates and be fanned out to setting for cabling in array substrate
It sets, so as to realize the design of pole narrow frame or Rimless, and then the production of the mosaic screen of large area may be implemented.
In a kind of possible embodiment, it is formed between the flexible substrate substrate and the multiple electroplated electrode slow
Rush layer, the flexible substrate substrate and the buffer layer region opposite with the electroplated electrode are formed with the through-hole, institute
It states and is formed with the conductive material in through-hole.
In a kind of possible embodiment, the material of the binding electrode is indium tin oxide.
In a kind of possible embodiment, the thin film transistor (TFT) TFT device layer includes being formed in the multiple plating
Electrode deviates from a plurality of signal wire of flexible substrate substrate side, and the signal wire is electrically connected with electroplated electrode one-to-one correspondence
It connects.
In a kind of possible embodiment, the signal wire include mutually insulated a plurality of grid line and a plurality of data
Line.
In a kind of possible embodiment, the thin film transistor (TFT) TFT device layer is away from the multiple electroplated electrode
Side is formed with black matrix, and the black matrix is located at the projection on the flexible substrate substrate and covers the through-hole positioned at described soft
Projection on property underlay substrate.
The utility model also provides a kind of method of any one array substrate for making and providing in above-mentioned technical proposal, packet
It includes:
Form flexible substrate substrate；
Multiple electroplated electrodes and thin film transistor (TFT) TFT device layer are formed in the side of the flexible substrate substrate；
It is formed on the flexible substrate substrate by laser boring technique and the one-to-one through-hole of the electroplated electrode；
Plating forms conductive material in the through-hole；
It is one-to-one with the through-hole away from the formation of the side of the multiple electroplated electrode in the flexible substrate substrate
Electrode is bound, the binding electrode is electrically connected by the corresponding electroplated electrode of the conductive material in its corresponding through-hole
It connects.
In a kind of possible embodiment, it is formed between the flexible substrate substrate and the multiple electroplated electrode
When buffer layer, after being punched on the flexible substrate substrate, by dry etch process etch buffer layer, formed with it is described
The opposite through-hole of electroplated electrode.
The utility model also provides a kind of flexible display panels, including any one array provided in above-mentioned technical proposal
Substrate.
The utility model also provides a kind of mosaic screen, including the flexible display panels provided in above-mentioned technical proposal.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the array substrate provided in the prior art；
Fig. 2 is a kind of cross section structure schematic diagram of array substrate provided by the embodiment of the utility model；
Fig. 3 is a kind of structural schematic diagram of array substrate provided by the embodiment of the utility model；
Fig. 4 is a kind of production method flow chart of array substrate provided by the embodiment of the utility model；
Fig. 5 is a kind of production method flow chart of array substrate provided by the embodiment of the utility model；
Fig. 6-Figure 12 is a kind of array substrate manufacturing process state diagram provided by the embodiment of the utility model.
Icon:
1- flexible substrate substrate；2- electroplated electrode；201- grid electroplated electrode；202- data electroplated electrode；The 31- first grid
Pole metal layer；301- grid line；302- connection electrode；32- second grid metal layer；303- gate line electrode；304- connection electrode；
4- conductive material；5- binds electrode；6- buffer layer；7- the first source-drain electrode metal layer；701- data line；The first source-drain electrode of 702-；
8- active layer；901- first grid line insulating layer；902- second gate line insulating layer；10- black matrix；11- interlayer insulating film；12- is flat
Smooth layer；The second source-drain electrode of 13-；14- boss structure；15- display binding electrode；16- protective layer.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Referring to FIG. 2, the utility model provides a kind of array substrate, including flexible substrate substrate 1, it is formed in flexible substrate
The multiple electroplated electrodes 2 and thin film transistor (TFT) TFT device layer of 1 side of substrate are formed with and the electricity on flexible substrate substrate 1
The one-to-one through-hole of plated electrode 2, through-hole is interior to be filled with conductive material 4, and flexible substrate substrate 1 is away from multiple electroplated electrodes 2
Side is formed with binds electrode 5 with the through-hole correspondingly, and each binding electrode 5 passes through the conduction in its corresponding through-hole
The corresponding electroplated electrode 2 of material 4 is electrically connected.
In the array substrate that above-mentioned utility model embodiment provides, multiple electroplated electrodes 2 are formed on flexible substrate substrate 1
And it is used for transmission the thin film transistor (TFT) TFT device layer of display signal, thin film transistor (TFT) TFT device layer is electrically connected with electroplated electrode 2
It connects, the region opposite with each electroplated electrode of flexible substrate substrate 1 is formed with through-hole, and conductive material 4 is filled in through-hole, flexible
Underlay substrate 1 is formed with away from the side of multiple electroplated electrodes 2 and binds electrode 5 correspondingly with through-hole, and binding electrode 5 passes through
The corresponding electroplated electrode 2 of conductive material 4 in its corresponding through-hole is electrically connected, above structure can by electroplated electrode 2,
Thin film transistor (TFT) TFT device layer is directly guided to flexible base board away from film crystal by conductive material 4 and the setting for binding electrode 5
The side of pipe TFT device layer and the flexible circuit board of external circuit connect, and realize thin film transistor (TFT) TFT device layer to display signal
Transmission, due to binding electrode 5 be directly arranged at flexible substrate substrate 1 deviate from thin film transistor (TFT) TFT device layer side, and
The setting that cabling is fanned out in array substrate is eliminated, so as to realize the design of pole narrow frame or Rimless, and then can be with
Realize the production of the mosaic screen of large area.
In the array substrate that above-mentioned utility model embodiment provides, between flexible substrate substrate 1 and multiple electroplated electrodes 2 also
It is formed with buffer layer 6, flexible substrate substrate 1 and the region opposite with each electroplated electrode of buffer layer 6 are formed with through-hole, through-hole
It is inside formed with conductive material 4, the setting of buffer layer 6 can enhance the bending ability of flexible display panels, and improve display surface
The water oxygen obstructing capacity and heat insulation of plate.
Optionally, the material for binding electrode 5 can be indium tin oxide, have excellent photoelectric properties.In the application, it ties up
The material of fixed electrode 5 is depending on actual selection, herein with no restrictions.Preferably, binding electrode 5 covers through-hole, both can be real
Existing conductive effect, and can realize the protection to conductive material in through-hole.
In above-mentioned array substrate, specifically, thin film transistor (TFT) TFT device layer may include being formed in multiple electroplated electrodes 2
A plurality of signal wire away from 1 side of flexible substrate substrate, signal wire are electrically connected with electroplated electrode one-to-one correspondence, are realized to signal
Transmission.
In above-mentioned array substrate, specifically, as shown in figure 3, signal wire includes a plurality of grid line of mutually insulated and more
Data line 701, multiple electroplated electrodes 2 include with grid line 301 correspond the grid electroplated electrode 201 that is electrically connected and with
Data line 701 corresponds the data electroplated electrode 202 of electrical connection, by conductive material 4 and binds electrode 5 for grid line
301 guide to the side that flexible substrate substrate 1 deviates from multiple electroplated electrodes 2 with data line 701, make to bind electrode 5 and flexible circuit
Plate connection carries out the transmission of signal.
In above-mentioned array substrate, it is preferable that thin film transistor (TFT) TFT device layer is formed away from the side of multiple electroplated electrodes 2
There is black matrix 10, black matrix 10 is located at the throwing that the projection covering through-hole on flexible substrate substrate 1 is located on flexible substrate substrate 1
Shadow, this structure setting can be avoided the light leakage phenomena of display panel.
Specifically, by taking the array substrate of low-temperature polysilicon silicon technology production as an example, can have in thin film transistor (TFT) TFT device layer
Body includes, as shown in Figure 1, active layer 8, first grid line insulating layer 901, first grid metal layer 31, second gate line insulating layer
902, second grid metal layer 32, interlayer insulating film 11, the first source-drain electrode metal layer 7, flatness layer 12, the second source-drain electrode 13, guarantor
Electrode 15 is bound in sheath 16, boss structure 14 and the display for binding with display device.
Wherein, active layer 8 can be arranged with 2 same layer of electroplated electrode；
Grid line 301 and connection electrode 302 are provided on first grid metal layer 31, grid line 301 and grid are electroplated
Electrode 201 is electrically connected；
It is provided on second grid metal layer 32 and forms the gate line electrode 303 of capacitor with first grid metal layer 31 and connect
Receiving electrode 304；
Be formed with data line 701 and the first source-drain electrode 702 on first source-drain electrode metal layer 7, the first source-drain electrode 702 with have
Active layer 8 is electrically connected, and data line 701 is electrically connected by connection electrode 302 and connection electrode 304 with data electroplated electrode 202, is avoided
As film layer offset it is excessively high and caused by overlap it is difficult；
Second source-drain electrode 13 is electrically connected with the first source-drain electrode 702, setting the second source-drain electrode 13 effect mainly due to
When the display device that display binding electrode 15 is bound shows that electric current is bigger, the second source-drain electrode 13 of setting can reduce data line
Resistance on 701 reduces IR pressure drop.Optionally, display device can be Micro light-emitting diode display part；
The effect of protective layer 16 is that the second source-drain electrode 13 of protection is injury-free in manufacture craft；
Boss structure 14 is conducive to display binding electrode 15 and display device is bound.
It should be noted that the specific structure of above-mentioned array substrate be only used as in the utility model may be implemented narrow frame or
One explanation of person's Rimless, can not be used as a kind of restriction embodiment.
The utility model also provides a kind of method of any one array substrate for making and providing in above-described embodiment, such as schemes
Shown in 4, comprising the following steps:
S401: flexible substrate substrate is formed；
S402: multiple electroplated electrodes and thin film transistor (TFT) TFT device layer are formed in the side of the flexible substrate substrate；
S403: it is formed on the flexible substrate substrate by laser boring technique one-to-one with the electroplated electrode
Through-hole；
S404: plating forms conductive material in the through-hole；
S405: it is formed and described one a pair of through-hole in the flexible substrate substrate away from the side of the multiple electroplated electrode
The binding electrode answered, the binding electrode electroplated electrode electricity corresponding by the conductive material in its corresponding through-hole
Connection.
In the production method of above-mentioned array substrate, multiple electroplated electrodes and film crystal are formed on flexible substrate substrate
Pipe TFT device layer, thin film transistor (TFT) TFT device layer is electrically connected with electroplated electrode, then in flexible substrate substrate and each plating
The opposite region of electrode is formed with through-hole, and plating forms conductive material in through-hole, finally in flexible substrate substrate away from multiple
The side of electroplated electrode is formed with binds electrode with through-hole correspondingly, and binding electrode passes through the conduction in its corresponding through-hole
The corresponding electroplated electrode electrical connection of material, this method can setting by electroplated electrode, conductive material and binding electrode
It sets and thin film transistor (TFT) TFT device layer is directly guided into side and external electrical of the flexible base board away from thin film transistor (TFT) TFT device layer
The flexible circuit board on road connects, and realizes transmission of the thin film transistor (TFT) TFT device layer to display signal, since binding electrode is directly set
It is placed in flexible substrate substrate and deviates from the side of thin film transistor (TFT) TFT device layer, and eliminate and be fanned out to cabling in array substrate
Setting, so as to realize the design of pole narrow frame or Rimless, and then may be implemented the production of the mosaic screen of large area.
Specifically, it is also formed with buffer layer between flexible substrate substrate and multiple electroplated electrodes, in flexible substrate substrate
On punched after, buffer layer is etched by dry etch process, to form the through-hole opposite with each electroplated electrode, this leads to
Buffer layer and flexible substrate substrate are run through in hole.
In a kind of possible embodiment, the specific production step of above-mentioned array substrate may include, as shown in Figure 5:
S501: flexible substrate substrate 1 is formed on the first surface glass A；
S502: multiple electroplated electrodes 2 and thin film transistor (TFT) TFT device layer are formed in the side of flexible substrate substrate 1, such as
Shown in Fig. 6；
S503: the second glass B is set away from the side of flexible substrate substrate in thin film transistor (TFT) TFT device layer, using group
Installing is standby to carry out to box the second glass, wherein the second glass B fixes box by adhesive C, as shown in Figure 7；
S504: the first glass is removed using peel-off device, as shown in Figure 8；
S505: it is punched using laser drilling region opposite with electroplated electrode on flexible substrate substrate, using dry
Method etching technics etches the buffer layer region opposite with electroplated electrode, forms leading to through flexible substrate substrate 1 and buffer layer 6
Hole, as shown in Fig. 9 and Figure 10；
S506: conductive material 4 is formed in through-hole by the way of plating, as shown in figure 11；
S507: binding electrode 5 is formed away from the side of multiple electroplated electrodes 2 in flexible substrate substrate 1, binding electrode 5 is logical
The conductive material 4 crossed in through-hole is electrically connected with electroplated electrode, as shown in figure 12；
S508: the second glass B of removal and adhesive C cut off array substrate extraneous region, as shown in Figures 2 and 3.
In above-mentioned array substrate manufacturing method, production thin film transistor (TFT) TFT device layer includes making with electroplated electrode one by one
The signal wire of corresponding electrical connection, signal wire may include grid line and data line.
In specific production method, production thin film transistor (TFT) TFT device layer, which may include that production is as shown in FIG. 6, to be served as a contrast
Active layer 8 that 1 side of substrate sequentially forms, first grid line insulating layer 901, first grid metal layer 31, the insulation of the second grid line
Layer 902, second grid metal layer 32, interlayer insulating film 11, the first source-drain electrode metal layer 7, flatness layer 12, the second source-drain electrode 13,
Protective layer 16, boss structure 14, display binding electrode 15.
Wherein, active layer 8 can be arranged with 2 same layer of electroplated electrode in thin film transistor (TFT) TFT device layer；When active layer and electricity
When plated electrode same layer is arranged, multiple electroplated electrodes 2 can be first made in the fabrication process of the array substrate, then have in same layer production
Active layer 8 can also first make the active layer 8 in thin film transistor (TFT) TFT device layer, then make multiple electroplated electrodes 2 in same layer；
Grid line 301 and connection electrode 302 are provided on first grid metal layer 31, grid line 301 and grid are electroplated
Electrode 201 is electrically connected；
It is provided on second grid metal layer 32 and forms the gate line electrode 303 of capacitor with first grid metal layer 31 and connect
Receiving electrode 304；
Be formed with data line 701 and the first source-drain electrode 702 on first source-drain electrode metal layer 7, the first source-drain electrode 702 with have
Active layer 8 is electrically connected, and data line 701 is electrically connected by connection electrode 302 and connection electrode 304 with data electroplated electrode 202；
Second source-drain electrode 13 is electrically connected with the first source-drain electrode 702.
It should be noted that, if first making through-hole on flexible substrate substrate, then being made when production array substrate
Signal wire (gate lines, data lines etc.) is directly overlapped in through-hole when the technique of thin film transistor (TFT) TFT device layer, may be due to soft
Property underlay substrate it is different from the coefficient of expansion of metal material and be easy to cause signal wire breaking.And in the production method of the present embodiment
It is first to first pass through the mode of plating on flexible substrate substrate before making thin film transistor (TFT) TFT device layer to make and signal wire pair
The electroplated electrode that should be electrically connected makes through-hole, passes through plating in through-hole after thin film transistor (TFT) TFT device layer process
Technique forms conductive material, guarantees that the signal on thin film transistor (TFT) TFT device layer can be transferred to flexible substrate substrate away from thin
The side of film transistor TFT device layer avoids signal wire breaking, and electroplated electrode connect with the conductive material of plating formation and makes
It is more accurate to obtain signal transmission.
Specifically, the plated material in through-hole can be able to be poly- for conductive metals, the materials of flexible substrate substrate such as copper
Acid imide etc..
The utility model also provides a kind of flexible display panels, including any one the array base provided in above-described embodiment
Plate.
The utility model also provides a kind of mosaic screen, including the flexible display panels provided in above-described embodiment.
Obviously, those skilled in the art the utility model embodiment can be carried out various modification and variations without departing from
The spirit and scope of the utility model.In this way, if these modifications and variations of the present invention belong to the utility model right
It is required that and its within the scope of equivalent technologies, then the utility model is also intended to include these modifications and variations.
Claims (8)
1. a kind of array substrate, which is characterized in that including flexible substrate substrate, be formed in the more of flexible substrate substrate side
A electroplated electrode and thin film transistor (TFT) TFT device layer are formed with the electroplated electrode one by one on the flexible substrate substrate
Corresponding through-hole, the through-hole is interior to be filled with conductive material, and the flexible substrate substrate deviates from the one of the multiple electroplated electrode
Side is formed with binds electrode with the through-hole correspondingly, and each binding electrode passes through the conduction in its corresponding through-hole
The corresponding electroplated electrode electrical connection of material.
2. array substrate according to claim 1, which is characterized in that the flexible substrate substrate and the multiple plating electricity
It is formed with buffer layer between pole, the flexible substrate substrate and the buffer layer region opposite with the electroplated electrode are formed
There is the through-hole, the conductive material is formed in the through-hole.
3. array substrate according to claim 1, which is characterized in that the material of the binding electrode is indium tin oxide.
4. array substrate according to claim 1, which is characterized in that the thin film transistor (TFT) TFT device layer includes being formed
Deviate from a plurality of signal wire of flexible substrate substrate side, the signal wire and plating electricity in the multiple electroplated electrode
Pole corresponds electrical connection.
5. array substrate according to claim 4, which is characterized in that the signal wire includes a plurality of grid of mutually insulated
Line and multiple data lines.
6. array substrate according to claim 1-5, which is characterized in that the thin film transistor (TFT) TFT device layer
It is formed with black matrix away from the side of the multiple electroplated electrode, the black matrix is located at the projection on the flexible substrate substrate
Cover the projection that the through-hole is located on the flexible substrate substrate.
7. a kind of flexible display panels, which is characterized in that including array substrate as claimed in any one of claims 1 to 6.
8. a kind of mosaic screen, which is characterized in that including flexible display panels as claimed in claim 7.
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| CN201920116523.0U CN209119104U (en) | 2019-01-23 | 2019-01-23 | A kind of array substrate, flexible display panels, mosaic screen |
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| CN201920116523.0U CN209119104U (en) | 2019-01-23 | 2019-01-23 | A kind of array substrate, flexible display panels, mosaic screen |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585462A (en) * | 2019-01-23 | 2019-04-05 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, flexible display panels, mosaic screen |
| CN110599946A (en) * | 2019-08-08 | 2019-12-20 | 长春希达电子技术有限公司 | High-density LED display box body based on TFT glass substrate and display screen |
-
2019
- 2019-01-23 CN CN201920116523.0U patent/CN209119104U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585462A (en) * | 2019-01-23 | 2019-04-05 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, flexible display panels, mosaic screen |
| CN110599946A (en) * | 2019-08-08 | 2019-12-20 | 长春希达电子技术有限公司 | High-density LED display box body based on TFT glass substrate and display screen |
| CN110599946B (en) * | 2019-08-08 | 2021-11-16 | 长春希达电子技术有限公司 | High-density LED display box body based on TFT glass substrate and display screen |
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