CN209087848U - A kind of structure cell and power device - Google Patents
A kind of structure cell and power device Download PDFInfo
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- CN209087848U CN209087848U CN201821669760.1U CN201821669760U CN209087848U CN 209087848 U CN209087848 U CN 209087848U CN 201821669760 U CN201821669760 U CN 201821669760U CN 209087848 U CN209087848 U CN 209087848U
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Abstract
The utility model discloses a kind of structure cell and power devices.The cellular includes N- epitaxial layer and two P-wells being symmetrically arranged at intervals on the upside of N- epitaxial layer, upside is respectively equipped with the first N+ trap in two P-wells, on the upside of the inner end of the P-well, the first grid oxide layer is covered on the upside of N- epitaxial layer between the interior upside of first N+ trap and two P-wells, the first polycrystalline item is equipped on the upside of first grid oxide layer, lateral separation sets that there are two the 2nd N+ traps respectively in the P-well of two sides among first polycrystalline article, the second grid oxide layer is transversely provided on the upside of P-well between the interior upside and two the 2nd N+ traps of described two 2nd N+ traps, the second polycrystalline item is equipped on the upside of second grid oxide layer.The utility model is improved by structure, bootable avalanche current trend, to improve avalanche capability.After the program improves, device avalanche capability generally can be improved 50% or more.
Description
Technical field
The present invention relates to field of semiconductor devices, and in particular to a kind of structure cell and power device.
Background technique
VDMOS (Vertical Double-diffused Metal Oxide Semicondector, vertical double diffusion gold
Belonging to oxide semiconductor) device has switching speed fast, and switching loss is small, and input impedance is high, voltage driving, and high-frequency etc. is excellent
Point, is accepted extensively and is used by market.In VDMOS device application, an important indicator is exactly avalanche capability, and snowslide is resistance to
Amount is higher, then applicable application range is more extensive.There are two types of cellular designs common at present, another one is a grid design
It is squared design, the device avalanche capability of two kinds of designs is limited.With the continuous development of VDMOS device, structure is continuous to be obtained
To improve, avalanche capability is improved as far as possible, to improve shock proof ability.
Summary of the invention
The purpose of the present invention is in view of the deficienciess of the prior art, providing a kind of structure cell and power device.
To achieve the above object, in a first aspect, the present invention provides a kind of structure cell, including N- epitaxial layer and two
Symmetrically be arranged at intervals on P-well on the upside of N- epitaxial layer, upside is respectively equipped with the first N+ trap in two P-wells, the P-well it is interior
It holds and is covered with the first grid oxide layer on the upside of the N- epitaxial layer between upside, the interior upside of the first N+ trap and two P-wells, described first
The first polycrystalline item is equipped on the upside of grid oxide layer, lateral separation sets that there are two the respectively in the P-well of two sides among first polycrystalline article
Two N+ traps, the P-well upside between the interior upside and two the 2nd N+ traps of described two 2nd N+ traps are transversely provided with the second grid oxygen
Layer, the second grid oxide layer upside are equipped with the second polycrystalline item.
Preferably, the width of the second polycrystalline item is 2 to 4 μm.
Preferably, the first polycrystalline item and the second polycrystalline item with a thickness ofExtremely
In second aspect, also a kind of power device of the present invention, including multiple above-mentioned structure cells, the multiple cellular knot
Structure is arranged and is connected with array.
Preferably, the spacing between the second polycrystalline item of the cellular of two longitudinally adjacent connections is 15 to 20 μm.
The utility model has the advantages that the present invention is improved by structure, bootable avalanche current trend, to improve avalanche capability.Through this
After scheme improves, device avalanche capability generally can be improved 50% or more.
Detailed description of the invention
Fig. 1 is the stereoscopic schematic diagram of the structure cell of the embodiment of the present invention；
Fig. 2 is the front view of the structure cell of the embodiment of the present invention；
Fig. 3 is the partial structural diagram of the power device of the embodiment of the present invention；
Fig. 4 be in Fig. 3 A-A to bottom view.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, and the present embodiment is with technical solution of the present invention
Premised under implemented, it should be understood that these examples are only for illustrating the present invention and are not intended to limit the scope of the present invention.
As shown in Figures 1 to 4, the embodiment of the invention provides a kind of structure cell, which includes N- epitaxial layer 1 and setting
Two P-wells 2 in 1 upside of N- epitaxial layer, two settings of P-well 2 are symmetrical arranged with the axial centerline of N- epitaxial layer 1, and two
The setting of a interval of P-well 2, is separated by part N- epitaxial layer 1 between the two.Upside is respectively equipped with the first N+ trap 3 in two P-wells 2,
First is covered on the upside of N- epitaxial layer 1 on the upside of the inner end of P-well 2, between the interior upside of the first N+ trap 3 and two P-wells 2
Grid oxide layer 4 is equipped with the first polycrystalline item 5 on the upside of first grid oxide layer 4, in the P-well 2 of the intermediate two sides of the first polycrystalline item 5 respectively laterally
Two the 2nd N+ traps 6 are equipped at intervals with, in the P-well 2 between the interior upside and two the 2nd N+ traps 6 of two the 2nd N+ traps 6
Side is transversely provided with the second grid oxide layer 7, is equipped with the second polycrystalline item 8 on the upside of the second grid oxide layer 7.First polycrystalline item 5 and the second polycrystalline item 8
Thickness be preferablyExtremelyThe width of second polycrystalline item 8 is very crucial, if the polycrystalline item is wide, P-well 2 then can
Separated, forms independent P-well one by one, then it is identical as rectangular cellular, the work for improving avalanche capability cannot be played
With improving the ineffective of avalanche capability if narrow, the width of the second polycrystalline item 8 is preferably 2 to 4 μm.
In production, one layer of grid oxide layer, threshold value of the thickness of grid oxide layer according to the device are formed first on N- epitaxial layer
Depending on the demand of voltage, then the deposit polycrystalline on grid oxide layer, forms by processing steps such as polycrystalline doping, photoetching and engravings
Then P-well injection region, the first polycrystalline item and the second polycrystalline item inject boron element to P-well injection region, then are formed through high annealing
P-well, then it is lithographically formed N+ trap injection region through N+ trap, after injecting arsenic element or P elements to N+ trap, just through high-temperature annealing process
Form N+ trap.
As shown in Figs. 3-4, the present invention also provides a kind of power device, which includes multiple above-mentioned cellulars
Structure, multiple structure cells are arranged and are connected with array.Between between second polycrystalline item 8 of the cellular of two longitudinally adjacent connections
It is 15 to 20 μm away from d, it is ensured that guide the position of the current trend of avalanche capability enough.
In conclusion the present invention is improved by structure, bootable avalanche current trend, to improve avalanche capability.Through this
After scheme improves, device avalanche capability generally can be improved 50% or more.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, other parts not specifically described belong to the prior art or common knowledge.In the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (5)
1. a kind of structure cell, which is characterized in that be symmetrically arranged at intervals on the upside of N- epitaxial layer including N- epitaxial layer and two
P-well, upside is respectively equipped with the first N+ trap in two P-wells, on the upside of the inner end of the P-well, the interior upside of the first N+ trap and two
It is covered with the first grid oxide layer on the upside of N- epitaxial layer between P-well, the first polycrystalline item is equipped on the upside of first grid oxide layer, it is described
Lateral separation is set there are two the 2nd N+ trap respectively in the P-well of two sides among first polycrystalline article, described two 2nd N+ traps it is interior on
It is transversely provided with the second grid oxide layer on the upside of P-well between side and two the 2nd N+ traps, is equipped with second on the upside of second grid oxide layer
Polycrystalline item.
2. structure cell according to claim 1, which is characterized in that the width of the second polycrystalline item is 2 to 4 μm.
3. structure cell according to claim 1, which is characterized in that the thickness of the first polycrystalline item and the second polycrystalline item
ForExtremely
4. a kind of power device, which is characterized in that described more including multiple structure cells as described in claims 1 to 3 is any
A structure cell is arranged and is connected with array.
5. power device according to claim 4, which is characterized in that the second polycrystalline of the cellular of two longitudinally adjacent connections
Spacing between item is 15 to 20 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821669760.1U CN209087848U (en) | 2018-10-16 | 2018-10-16 | A kind of structure cell and power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821669760.1U CN209087848U (en) | 2018-10-16 | 2018-10-16 | A kind of structure cell and power device |
Publications (1)
| Publication Number | Publication Date |
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| CN209087848U true CN209087848U (en) | 2019-07-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821669760.1U Active CN209087848U (en) | 2018-10-16 | 2018-10-16 | A kind of structure cell and power device |
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| CN (1) | CN209087848U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326636A (en) * | 2018-10-16 | 2019-02-12 | 南京华瑞微集成电路有限公司 | A kind of structure cell and power device |
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2018
- 2018-10-16 CN CN201821669760.1U patent/CN209087848U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326636A (en) * | 2018-10-16 | 2019-02-12 | 南京华瑞微集成电路有限公司 | A kind of structure cell and power device |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Cell structure and power device Effective date of registration: 20211110 Granted publication date: 20190709 Pledgee: Bank of Jiangsu Co.,Ltd. Nanjing Jiangbei new area sub branch Pledgor: NANJING HUARUIWEI INTEGRATED CIRCUIT Co.,Ltd. Registration number: Y2021980012236 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230217 Granted publication date: 20190709 Pledgee: Bank of Jiangsu Co.,Ltd. Nanjing Jiangbei new area sub branch Pledgor: NANJING HUARUIWEI INTEGRATED CIRCUIT Co.,Ltd. Registration number: Y2021980012236 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A Cellular Structure and Power Device Effective date of registration: 20230315 Granted publication date: 20190709 Pledgee: Nanjing Branch of Jiangsu Bank Co.,Ltd. Pledgor: NANJING HUARUIWEI INTEGRATED CIRCUIT Co.,Ltd. Registration number: Y2023980035005 |