CN209087812U - A kind of substrat structure of high power semiconductor - Google Patents
A kind of substrat structure of high power semiconductor Download PDFInfo
- Publication number
- CN209087812U CN209087812U CN201822117875.6U CN201822117875U CN209087812U CN 209087812 U CN209087812 U CN 209087812U CN 201822117875 U CN201822117875 U CN 201822117875U CN 209087812 U CN209087812 U CN 209087812U
- Authority
- CN
- China
- Prior art keywords
- substrat structure
- dielectric layer
- substrate carrier
- high power
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a kind of substrat structures of high power semiconductor, including dielectric layer and substrate carrier, support plate is welded with below the substrate carrier, the two sides appearance wall of the substrate carrier symmetrically offers link slot, the bottom end inner surface wall of the link slot equidistantly offers sliding slot, and the inner surface wall of sliding slot is pasted with oxidation-resistant film, the upper surface of the dielectric layer and conductive layer is embedded between adjacent crystal mounting groove, the side inner surface wall of three crystal mounting grooves offers pin jack, and the inside of pin jack is filled with insulation filling film.In the utility model, the substrat structure uses dielectric layer and the knockdown connecting method of substrate carrier, it is convenient that quickly and easily installing and dismounting operation is carried out to substrat structure, so as in a certain subelement damage of substrat structure, deconsolidation process can be carried out to substrat structure in first time, and then quick repair and replacement are carried out, improve the using flexible of substrat structure.
Description
Technical field
The utility model relates to technical field of semiconductors more particularly to a kind of substrat structures of high power semiconductor.
Background technique
Transistor and integrated circuit are made on the surface of semiconductor chip, and semiconductor chip here is exactly to serve as a contrast
Bottom structure, semiconductor substrate not only plays a part of electric property, but also plays a part of mechanical support, important in semiconductor
Constituent element.
However the substrat structure of existing high power semiconductor generallys use the package assembly of integral type, the group of substrat structure
Can not carry out disassembling section at element, when the component wear of substrat structure a part, can not element to damaged location into
Row detachable maintaining replacement processing, can only select the mode of replacement bulk substrate structure, thus increase the use of substrat structure at
This, is unfavorable for promoting the use of on a large scale.
Utility model content
Purpose of the utility model is to solve disadvantages existing in the prior art, and a kind of high power proposed is partly led
The substrat structure of body.
To achieve the goals above, the utility model adopts the technical scheme that a kind of substrate of high power semiconductor
Structure, including dielectric layer and substrate carrier, are welded with support plate below the substrate carrier, outside the two sides of the substrate carrier
Table wall symmetrically offers link slot, and the bottom end inner surface wall of the link slot equidistantly offers sliding slot, and the inner surface wall of sliding slot is pasted
There is oxidation-resistant film, be provided with anti-plate layer above the dielectric layer, the upper surface of the dielectric layer equidistantly opens up that there are three brilliant
Body mounting groove, the upper surface of the dielectric layer and is embedded with conductive layer between adjacent crystal mounting groove, three crystal
The side inner surface wall of mounting groove offers pin jack, and the inside of pin jack is filled with insulation filling film.
It is described as above-mentioned technical proposal to further describe:
The sliding slot offers several altogether, and the side cross-sectional of several sliding slots is in semicircular arc structure.
It is as above-mentioned technical proposal to further describe:
The inside of the anti-plate layer and be located at pin jack below be provided with electrode slice, and electrode slice and pin jack
Lower ending opening at connect.
It is as above-mentioned technical proposal to further describe:
The surface surrounding corner of the dielectric layer offers upper hole.
It is as above-mentioned technical proposal to further describe:
The upper surface surrounding corner of the substrate carrier offers the next hole, and the internal diameter in the next hole and upper hole is big
It is small equal.
It is as above-mentioned technical proposal to further describe:
The lower surface two sides of the dielectric layer are symmetrically arranged with fixture block, and fixture block and substrate carrier upper surface two sides open up
Card slot connects and fixes.
Beneficial effect
The utility model provides a kind of substrat structure of high power semiconductor.Have it is following the utility model has the advantages that
(1): the substrat structure use dielectric layer and the knockdown connecting method of substrate carrier, facilitate to substrat structure into
Quickly and easily installing and dismounting operates row, can be at the first time so as in substrat structure a certain subelement damage
Deconsolidation process is carried out to substrat structure, and then carries out more quick repair and replacement, improves the using flexible of substrat structure.
(2): on the one hand the substrat structure can play stable connection clamping by the link slot of setting in substrate carrier
Effect, it is ensured that the stability of substrate carrier position, on the other hand cooperate arc sliding groove structure, can link slot be clamped when,
The accuracy for further ensuring link slot clamping position is realized to the comprehensive perfect reinforcement protection effect of substrat structure.
Detailed description of the invention
Fig. 1 be the utility model proposes a kind of high power semiconductor substrat structure overall structure diagram；
Fig. 2 is the side structure schematic view of substrate carrier in the utility model；
Fig. 3 is the schematic diagram of internal structure of pin jack in the utility model.
Marginal data:
1, dielectric layer；2, the next hole；3, substrate carrier；31, support plate；4, fixture block；5, card slot；6, link slot；61, sliding
Slot；62, oxidation-resistant film；7, conductive layer；8, crystal mounting groove；9, anti-plate layer；91, electrode slice；10, upper hole；11, pin is inserted
Hole；111, insulation filling film.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.
Referring to Fig.1-3, a kind of substrat structure of high power semiconductor, including dielectric layer 1 and substrate carrier 3, substrate carrier 3
Lower section be welded with support plate 31, the two sides appearance wall of substrate carrier 3 symmetrically offers link slot 6, table in the bottom end of link slot 6
Wall equidistantly offers sliding slot 61, and the inner surface wall of sliding slot 61 is pasted with oxidation-resistant film 62, and the top of dielectric layer 1 is provided with anti-plate
Layer 9, the upper surface of dielectric layer 1 equidistantly open up there are three crystal mounting groove 8, the upper surface of dielectric layer 1 and pacify positioned at adjacent crystal
Conductive layer 7 is embedded between tankage 8, the side inner surface wall of three crystal mounting grooves 8 offers pin jack 11, and pin is inserted
The inside in hole 11 is filled with insulation filling film 111.
Sliding slot 61 offers several altogether, and the side cross-sectional of several sliding slots 61 is in semicircular arc structure, so that sliding
Slot 61 can be corresponded with the sliding block of external bindiny mechanism and is slidably connected, so that it is guaranteed that the connection accuracy of link slot 6, anti-electricity
The inside of coating 9 and be located at pin jack 11 lower section be provided with electrode slice 91, and the lower end of electrode slice 91 and pin jack 11
Opening connection, the surface surrounding corner of dielectric layer 1 offer upper hole 10, the upper surface surrounding turning of substrate carrier 3
Place offers the next hole 2, and the next hole 2 is equal with the inner diameter size in upper hole 10, and the lower surface two sides of dielectric layer 1 are symmetrically set
It is equipped with fixture block 4, and the card slot 5 that fixture block 4 is opened up with 3 upper surface two sides of substrate carrier connects and fixes, when fixture block 4 is embedded in card slot 5
Behind portion, upper hole 10 can be also overlapped with the position in the next hole 2, extend through upper hole 10 and bottom by outer connecting connector at this time
Hole 2 has the function that fixing comprehensively to substrat structure.
Working principle: in use, the position of alignment fixture block 4 and card slot 5, dielectric layer 1 is pressed down on so that fixture block 4 is embedded in
In card slot 5, so that dielectric layer 1 and substrate carrier 3 be installed, then connector is entered to the next hole behind upper hole 10
In 2, to realize comprehensive fixed effect of substrat structure, transistor is embedded in crystal mounting groove 8, and pin is inserted into pin jack 11
Interior limit, so that the bottom of pin is connect with 91, electrode, to realize the mutual conduction effect between electronic component, it is ensured that lining
The electric property of bottom structure itself, after substrat structure is installed, the structure of mating connection slot 6, by substrate carrier 3 with it is external
Bindiny mechanism is connected and fixed, and when link slot 6 connects, the sliding slot 61 of semicircular arc structure can be to the tool of link slot 6
Body link position plays the role of clamping limit, it is ensured that the accuracy that link slot 6 connects, then the substrat structure completely uses.
In the description of this specification, the description of reference term " one embodiment ", " example ", " specific example " etc. means
Specific features described in conjunction with this embodiment or example, structure, material live feature and are contained at least one implementation of the invention
In example or example.In the present specification, schematic expression of the above terms may not refer to the same embodiment or example.
Moreover, particular features, structures, materials, or characteristics described can be in any one or more of the embodiments or examples to close
Suitable mode combines.
The preferable specific embodiment of the above, only the utility model, but the protection scope of the utility model is not
It is confined to this, anyone skilled in the art is within the technical scope disclosed by the utility model, practical according to this
Novel technical solution and its utility model design are subject to equivalent substitution or change, should all cover the protection model in the utility model
Within enclosing.
Claims (6)
1. a kind of substrat structure of high power semiconductor, including dielectric layer (1) and substrate carrier (3), which is characterized in that the base
It is welded with support plate (31) below onboard body (3), the two sides appearance wall of the substrate carrier (3) symmetrically offers link slot
(6), the bottom end inner surface wall of the link slot (6) equidistantly offers sliding slot (61), and the inner surface wall of sliding slot (61) is pasted with antioxygen
Change film (62), is provided with anti-plate layer (9) above the dielectric layer (1), the upper surface of the dielectric layer (1) equidistantly offers
Three crystal mounting grooves (8), the upper surface of the dielectric layer (1) and are embedded with conduction between adjacent crystal mounting groove (8)
Layer (7), the side inner surface wall of three crystal mounting grooves (8) offer pin jack (11), and pin jack (11)
Inside is filled with insulation filling film (111).
2. a kind of substrat structure of high power semiconductor according to claim 1, which is characterized in that the sliding slot (61) is altogether
Several are offered, and the side cross-sectional of several sliding slots (61) is in semicircular arc structure.
3. a kind of substrat structure of high power semiconductor according to claim 1, which is characterized in that the anti-plate layer
(9) inside and being located at below pin jack (11) is provided with electrode slice (91), and electrode slice (91) and pin jack (11)
Lower ending opening at connect.
4. a kind of substrat structure of high power semiconductor according to claim 1, which is characterized in that the dielectric layer (1)
Surface surrounding corner offer upper hole (10).
5. a kind of substrat structure of high power semiconductor according to claim 1, which is characterized in that the substrate carrier
(3) upper surface surrounding corner offers the next hole (2), and the next hole (2) is equal with the inner diameter size of upper hole (10).
6. a kind of substrat structure of high power semiconductor according to claim 1, which is characterized in that the dielectric layer (1)
Lower surface two sides be symmetrically arranged with fixture block (4), and the card slot (5) that fixture block (4) and substrate carrier (3) upper surface two sides open up blocks
Connect fixation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822117875.6U CN209087812U (en) | 2018-12-17 | 2018-12-17 | A kind of substrat structure of high power semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822117875.6U CN209087812U (en) | 2018-12-17 | 2018-12-17 | A kind of substrat structure of high power semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209087812U true CN209087812U (en) | 2019-07-09 |
Family
ID=67126993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822117875.6U Expired - Fee Related CN209087812U (en) | 2018-12-17 | 2018-12-17 | A kind of substrat structure of high power semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209087812U (en) |
-
2018
- 2018-12-17 CN CN201822117875.6U patent/CN209087812U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190709 Termination date: 20201217 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |