CN209071337U - PHEMT low-noise amplifier epitaxial structure with multiple quantum wells buffer layer - Google Patents
PHEMT low-noise amplifier epitaxial structure with multiple quantum wells buffer layer Download PDFInfo
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- CN209071337U CN209071337U CN201820880048.XU CN201820880048U CN209071337U CN 209071337 U CN209071337 U CN 209071337U CN 201820880048 U CN201820880048 U CN 201820880048U CN 209071337 U CN209071337 U CN 209071337U
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Abstract
The utility model discloses the PHEMT low-noise amplifier epitaxial structures with multiple quantum wells buffer layer.The structure includes GaAs semi-insulating substrate, GaAs-AlGaAs multiple quantum wells buffer layer, AlGaAs lower barrierlayer, InGaAs channel layer, the space AlGaAs separation layer, mixes Si AlGaAs barrier layer, AlAs corrosion barrier layer, the highly doped cap layers of GaAs.For conventional low-noise amplifier PHEMT, PHEMT with GaAs-AlGaAs multiple quantum wells buffer layer can reduce in buffer layer unintentionally doping concentration, the pinch off of channel carrier is cleaner, mutual conductance of the low-noise amplifier in low current can be effectively improved, to be conducive to improve the noise coefficient of low-noise amplifier.
Description
Technical field
The utility model relates to a kind of PHEMT low-noise amplifier epitaxial material structure with multiple quantum wells buffer layer,
More particularly to a kind of GaAs base PHEMT low-noise amplifier epitaxial material knot with GaAs-AlGaAs multiple quantum wells buffer layer
Structure belongs to compound semiconductor materials and device arts.
Background technique
GaAs base pseudomorphic high electron mobility transistor (PHEMT) is a kind of compound semiconductor materials, have high frequency,
The features such as high power gain and low noise, thus it is widely used in wireless telecommunications, optical-fibre communications, satellite communication, millimeter wave thunder
It reaches and electronic countermeasure etc. is military and civil field.The production of GaAs PHEMT epitaxial material is in entire GaAs industrial chain
An important ring, the quality of epitaxial material directly determine the important performance of final product.Conventional low-noise amplifier PHEMT extension
Structure mostly does buffer layer with GaAs layers, but since GaAs material band gap is narrow, unintentionally dopant concentration is higher, be easy to cause
Pinch off is not clean, and the low current mutual conductance of corresponding low-noise amplifier becomes smaller, and in turn results in low-noise amplifier noise coefficient evil
Change.
Therefore designing a kind of buffer layer structure and solving problem above has realistic meaning.
Utility model content
The purpose of this utility model is to propose a kind of GaAs base PHEMT with GaAs-AlGaAs multiple quantum wells buffer layer
Low-noise amplifier epitaxial material structure, GaAs-AlGaAs multi-quantum pit structure reduce buffer layer unintentionally doping concentration, have
Conducive to the noise coefficient for improving GaAs base PHEMT low-noise amplifier.
The technical solution adopted in the utility model is a kind of PHEMT low-noise amplifier with multiple quantum wells buffer layer
Epitaxial material structure, the structure include GaAs semi-insulating substrate (1), GaAs-AlGaAs multiple quantum wells buffer layer (2), AlGaAs
Lower barrierlayer (3), the space AlGaAs separation layer (5), mixes Si AlGaAs barrier layer (6), AlAs corruption at InGaAs channel layer (4)
Lose barrier layer (7) and the highly doped cap layers of GaAs (8).
Specifically, successively grown on GaAs semi-insulating substrate (1) GaAs-AlGaAs multiple quantum wells buffer layer (2),
AlGaAs lower barrierlayer (3), InGaAs channel layer (4), the space AlGaAs separation layer (5), mix Si AlGaAs barrier layer (6),
AlAs corrodes barrier layer (7), the highly doped cap layers of GaAs (8).
The GaAs-AlGaAs multiple quantum wells buffer layer (2) is used to be that InGaAs channel layer (4) offer one is smooth
Grain boundary, while the influence for GaAs semi-insulating substrate (1) the bottom interface state that disappears, periodicity 15-25, signal period with a thickness ofOverall thickness isExtremely
The AlGaAs lower barrierlayer (3) is constraint channel carrier, and channel carrier is prevented to flow out to substrate direction,
Its thickness is
Two-dimensional electron gas is strapped in channel by the InGaAs channel layer (4), with a thickness ofExtremelyIn
Group be divided into 0.15 to 0.25.
The space the AlGaAs separation layer (5) is to separate ionized donor impurity and channel carrier, and it is miscellaneous to reduce ionization
Matter scattering, with a thickness of
The Si AlGaAs barrier layer (6) of mixing provides free electron for channel.Dopant is Si, doping concentration 5E+
17cm-3To 2E+18cm-3。
AlAs corrosion barrier layer (7) can be such that chemical attack is equably parked in the layer, improve device parameters
Uniformity, thickness are
The highly doped cap layers of the GaAs (8) are to provide excellent Ohmic contact, dopant Si, doping for device preparation
Concentration is 1E+18 to 6E+18cm-3, with a thickness of
Compared with prior art, the utility model has the advantages that.
GaAs-AlGaAs multiple quantum wells buffering for conventional low-noise amplifier PHEMT, in this structure
Layer can reduce in buffer layer unintentionally dopant concentration, and pinch off is cleaner, low current mutual conductance is effectively improved, to be conducive to change
The noise coefficient of kind GaAs base PHEMT low-noise amplifier.
Detailed description of the invention
Fig. 1: kind has the GaAs base PHEMT low-noise amplifier epitaxial material of GaAs-AlGaAs multiple quantum wells buffer layer
Structure.
In figure: 1, GaAs semi-insulating substrate, 2, GaAs-AlGaAs multiple quantum wells buffer layer, 3, AlGaAs lower barrierlayer,
4, InGaAs channel layer, 5, the space AlGaAs separation layer, 6, mix Si AlGaAs barrier layer, 7, AlAs corrode barrier layer, 8,
The highly doped cap layers of GaAs.
Specific embodiment
As shown in Figure 1, a kind of PHEMT low-noise amplifier epitaxial material structure with multiple quantum wells buffer layer, the knot
Structure include GaAs semi-insulating substrate (1), GaAs-AlGaAs multiple quantum wells buffer layer (2), AlGaAs lower barrierlayer (3),
InGaAs channel layer (4), the space AlGaAs separation layer (5), mix Si AlGaAs barrier layer (6), AlAs corrosion barrier layer (7) and
The highly doped cap layers of GaAs (8).
Specifically, successively grown on GaAs semi-insulating substrate (1) GaAs-AlGaAs multiple quantum wells buffer layer (2),
AlGaAs lower barrierlayer (3), InGaAs channel layer (4), the space AlGaAs separation layer (5), mix Si AlGaAs barrier layer (6),
AlAs corrodes barrier layer (7), the highly doped cap layers of GaAs (8).
The GaAs-AlGaAs multiple quantum wells buffer layer (2) is used to be that InGaAs channel layer (4) offer one is smooth
Grain boundary, while the influence for GaAs semi-insulating substrate (1) the bottom interface state that disappears, periodicity 15-25, signal period with a thickness ofOverall thickness isExtremely
The AlGaAs lower barrierlayer (3) is constraint channel carrier, and channel carrier is prevented to flow out to substrate direction,
Its thickness is
Two-dimensional electron gas is strapped in channel by the InGaAs channel layer (4), with a thickness ofExtremelyIn
Group be divided into 0.15 to 0.25.
The space the AlGaAs separation layer (5) is to separate ionized donor impurity and channel carrier, and it is miscellaneous to reduce ionization
Matter scattering, with a thickness of
The Si AlGaAs barrier layer (6) of mixing provides free electron for channel.Dopant is Si, doping concentration 5E+
17cm-3To 2E+18cm-3。
AlAs corrosion barrier layer (7) can be such that chemical attack is equably parked in the layer, improve device parameters
Uniformity, thickness are
The highly doped cap layers of the GaAs (8) are to provide excellent Ohmic contact, dopant Si, doping for device preparation
Concentration is 1E+18 to 6E+18cm-3, with a thickness of
Specifically epitaxial material growth process is
(1) 25 period GaAs-AlGaAs multiple quantum wells buffer layers, total thickness are grown in GaAs semi-insulating substrate
(2) it then growsThick AlGaAs lower barrierlayer.
(3) it is grown on AlGaAs lower barrierlayerIn0.22Ga0.78As channel layer.
(4) existIn0.22Ga0.78It is grown on As channel layerAl0.22Ga0.78The space As separation layer.
(5) existAl0.22Ga0.78It is grown on As separation layerMix Si Al0.25Ga0.75As barrier layer.
(6) existMix Si Al0.25Ga0.75It is grown on As barrier layerAlAs corrodes barrier layer.
(7) existIt is grown in AlAs corrosion barrier layerHeavy doping GaAs cap layers, doping concentration 6E+18cm-3。
Claims (1)
1. the PHEMT low-noise amplifier epitaxial structure with multiple quantum wells buffer layer, it is characterised in that: the structure includes GaAs half
Insulating substrate (1), GaAs-AlGaAs multiple quantum wells buffer layer (2), AlGaAs lower barrierlayer (3), InGaAs channel layer (4),
The space AlGaAs separation layer (5) mixes SiAlGaAs barrier layer (6), AlAs corrosion barrier layer (7) and the highly doped cap layers of GaAs (8)；
GaAs-AlGaAs multiple quantum wells buffer layer (2), AlGaAs lower barrierlayer are successively grown on GaAs semi-insulating substrate (1)
(3), InGaAs channel layer (4), the space AlGaAs separation layer (5), mix SiAlGaAs barrier layer (6), AlAs corrosion barrier layer
(7), the highly doped cap layers of GaAs (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820880048.XU CN209071337U (en) | 2018-06-07 | 2018-06-07 | PHEMT low-noise amplifier epitaxial structure with multiple quantum wells buffer layer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820880048.XU CN209071337U (en) | 2018-06-07 | 2018-06-07 | PHEMT low-noise amplifier epitaxial structure with multiple quantum wells buffer layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429128A (en) * | 2019-07-30 | 2019-11-08 | 厦门市三安集成电路有限公司 | A kind of low potential barrier multiple quantum wells high resistance buffer layer epitaxial structure and preparation method thereof |
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2018
- 2018-06-07 CN CN201820880048.XU patent/CN209071337U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429128A (en) * | 2019-07-30 | 2019-11-08 | 厦门市三安集成电路有限公司 | A kind of low potential barrier multiple quantum wells high resistance buffer layer epitaxial structure and preparation method thereof |
| CN110429128B (en) * | 2019-07-30 | 2022-09-13 | 厦门市三安集成电路有限公司 | Low-barrier multi-quantum-well high-resistance buffer layer epitaxial structure and preparation method thereof |
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Address after: 215151 plant 28, supporting industrial park, export processing zone, No. 666 Jianlin Road, Suzhou high tech Zone, Suzhou, Jiangsu Province Patentee after: Xinlei semiconductor technology (Suzhou) Co.,Ltd. Address before: 215151 plant 28, supporting industrial park, export processing zone, No. 666 Jianlin Road, Suzhou high tech Zone, Suzhou, Jiangsu Province Patentee before: EPI SOLUTION TECHNOLOGY CO.,LTD. |
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