CN209056478U - DBC substrate and IGBT device - Google Patents
DBC substrate and IGBT device Download PDFInfo
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- CN209056478U CN209056478U CN201822209789.8U CN201822209789U CN209056478U CN 209056478 U CN209056478 U CN 209056478U CN 201822209789 U CN201822209789 U CN 201822209789U CN 209056478 U CN209056478 U CN 209056478U
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- copper
- dbc substrate
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- ceramic layer
- arcwall face
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Abstract
The utility model provides a kind of DBC substrate and IGBT device, wherein the DBC substrate includes: ceramic layer and the layers of copper that is set on the ceramic layer；The layers of copper has the side between top surface, bottom surface and top and bottom, the layers of copper is stacked and placed on the surface of the ceramic layer by its bottom surface, and it is located at the intermediate region on the surface of the ceramic layer, the side is the arcwall face of setting of being recessed inwardly, the arcwall face is continuously arranged along the surrounding of the layers of copper, it makes the area of the top surface be less than the area of bottom surface, and the arc range of the arcwall face is 110 °~160 °.The DBC substrate of the utility model is conducive to weaken original stress concentration, to improve the reliable life of DBC substrate, while also helping the normal work for ensureing corresponding electronic device by being arc by the lateral layout at the four sides of copper material.
Description
Technical field
The utility model relates to a kind of substrate more particularly to a kind of DBC substrate and IGBT devices.
Background technique
Existing DBC substrate use the ceramic surface metallization based on gas-metal eutectic reaction technology, the technology in
It is proposed at first by Burgess and Sun and is applied in power module encapsulation within 1975.Specifically put on aluminium oxide ceramic substrate
The copper foil for setting required thickness in oxygen containing nitrogen atmosphere and is heated to 1066 DEG C, and copper forms cupric and oxygen in oxygen atmosphere
Eutectic liquid phase soaks at the interface of the layers of copper and alumina ceramic layer that directly contact, and by chemical reaction that copper and ceramics is firm
Solid combine.For this traditional DBC substrate manufacture technique in module application, metal and ceramics under thermal cycling can be because
Stress concentrates big generation delamination and ceramic fault rupture.Therefore, for above-mentioned difficult problem, it is necessary to propose further solution party
Case.
Utility model content
The utility model is intended to provide a kind of DBC substrate and IGBT device, to overcome the deficiencies in the prior art.
In order to solve the above technical problems, the technical solution of the utility model is:
A kind of DBC substrate comprising: ceramic layer and the layers of copper being set on the ceramic layer；
The layers of copper has the side between top surface, bottom surface and top and bottom, and the layers of copper is stacked by its bottom surface
In on the surface of the ceramic layer, and it is located at the intermediate region on the surface of the ceramic layer, the side is the setting that is recessed inwardly
Arcwall face, which is continuously arranged along the surrounding of the layers of copper, make the area of the top surface be less than the area of bottom surface,
The arc range of the arcwall face is 110 °~160 °.
The improvement of DBC substrate as the utility model, the material of the ceramic layer are aluminum oxide or aluminium nitride.
The improvement of DBC substrate as the utility model, the layers of copper are incorporated into the ceramic layer in such a way that weldering is covered
On.
The improvement of DBC substrate as the utility model, it is opposite that the layers of copper respectively symmetrically is set to the ceramic layer
On the upper and lower surfaces of setting.
The improvement of DBC substrate as the utility model, the arc range of the arcwall face are 120 °~150 °.
The improvement of DBC substrate as the utility model, the arcwall face take shape in the layers of copper by way of etching
On.
In order to solve the above technical problems, the technical solution of the utility model is:
A kind of IGBT device comprising: the substrate of chip and the carrying chip, the chip and substrate integral type envelope
Dress, the substrate are DBC substrate as described above.
Compared with prior art, the utility model has the beneficial effects that the DBC substrate of the utility model is by by copper material
The lateral layout at four sides is arc, is conducive to weaken original stress concentration, to improve the reliability of DBC substrate
Service life, while also helping the normal work for ensureing corresponding electronic device.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments recorded in the utility model, for those of ordinary skill in the art, is not making the creative labor
Under the premise of, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the top view of the DBC substrate of the utility model；
Fig. 2 is the side view of the DBC substrate of the utility model；
Fig. 3 is the partial enlargement diagram of DBC substrate in Fig. 2.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
In Thermal Cycling, traditional DBC substrate copper and ceramic delivery position can the concentration generation delaminations of stress difference
And ceramic fault rupture.In view of the plastic property of copper, when the stress of part concentration reaches the yield limit of copper, the deformation of copper
It continues growing, and stress remains unchanged, the increased stress of partial points will be undertaken by the material that do not surrender, it is known that the copper in the section
Reach yield limit.Therefore, weaken the principle that stress is concentrated with reference to LOAD REDUCING SLOT or escape, arcuate structure is carried out in layers of copper
Design, formed arc layers of copper structure DBC substrate.
As shown in Figures 1 to 3, specifically, the utility model provides a kind of DBC substrate comprising: ceramic layer 1 and setting
Layers of copper 2 on the ceramic layer 1.Wherein, the material of the ceramic layer 1 is aluminum oxide or aluminium nitride.The layers of copper 2
It is incorporated on the ceramic layer 1 in such a way that weldering is covered.
The layers of copper 2 is led to the side 23 between top surface 21, bottom surface 22 and top surface 21 and bottom surface 22, the layers of copper 2
It crosses its bottom surface 22 to be stacked and placed on the surface of the ceramic layer 1, and is located at the intermediate region on the surface of the ceramic layer 1, the side
Face 23 is the arcwall face of setting of being recessed inwardly.So set, the stress concentration of traditional DBC substrate is weakened, to mention
The high reliable life of DBC substrate.Preferably, the arcwall face is taken shape in by way of etching in the layers of copper 2.
In a preferred embodiment, which is continuously arranged along the surrounding of the layers of copper 2, makes the top
The area in face 21 is less than the area of bottom surface 22, and the arc range of the arcwall face is 110 °~160 °.Preferably, the arcwall face
Arc range be 120 °~150 °.
In addition, one side or two sides that layers of copper 2 is set to the ceramic layer 1 may be selected according to actual demand.One
In a embodiment, the layers of copper 2 is respectively arranged on the upper and lower surfaces that the ceramic layer 1 is oppositely arranged, it is preferable that is located at
The layers of copper 2 of 1 upper and lower surfaces of ceramic layer keeps being symmetrical arranged.
It is control group that traditional DBC substrate, which is arranged, the DBC substrate of 2 structure of arc layers of copper that it is related to this patent into
The comparison of row thermal cycling test, show traditional DBC substrate fatigue life in 40~45 range of DOs, and the DBC of this patent
Substrate fatigue life is in 145~160 range of DOs, so that the DBC substrate service life of the utility model improves 4 times or so.
Based on DBC substrate as described above, the utility model also provides a kind of IGBT device, which includes: core
The substrate of piece and the carrying chip, the chip and the encapsulation of substrate integral type, the substrate are DBC base as described above
Plate.
In addition, without creative efforts, the DBC substrate of the utility model applies also for other similar
Product in use as substrate, the utility model is not enumerated one by one.
In conclusion the DBC substrate of the utility model is by being designed as arc for the side 23 at the four sides of copper material, it is advantageous
Weaken in by original stress concentration, to improve the reliable life of DBC substrate, while also helping the corresponding electricity of guarantee
The normal work of sub- device.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this is practical new in other specific forms
Type.Therefore, in all respects, the present embodiments are to be considered as illustrative and not restrictive, this is practical new
The range of type is indicated by the appended claims rather than the foregoing description, it is intended that containing for the equivalent requirements of the claims will be fallen in
All changes in justice and range are embraced therein.It should not treat any reference in the claims as limiting
Related claim.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (7)
1. a kind of DBC substrate, which is characterized in that the DBC substrate includes: ceramic layer and the copper that is set on the ceramic layer
Layer；
The layers of copper has the side between top surface, bottom surface and top and bottom, and the layers of copper is stacked and placed on institute by its bottom surface
It states on the surface of ceramic layer, and is located at the intermediate region on the surface of the ceramic layer, the side is the arc of setting of being recessed inwardly
Shape face, the arcwall face are continuously arranged along the surrounding of the layers of copper, and the area of the top surface is made to be less than the area of bottom surface, described
The arc range of arcwall face is 110 °~160 °.
2. DBC substrate according to claim 1, which is characterized in that the material of the ceramic layer be aluminum oxide or
Aluminium nitride.
3. DBC substrate according to claim 1, which is characterized in that the layers of copper is incorporated into described in such a way that weldering is covered
On ceramic layer.
4. DBC substrate according to claim 1, which is characterized in that the layers of copper respectively symmetrically is set to the ceramics
On the upper and lower surfaces that layer is oppositely arranged.
5. DBC substrate according to claim 1, which is characterized in that the arc range of the arcwall face is 120 °~150 °.
6. DBC substrate according to claim 1, which is characterized in that the arcwall face takes shape in institute by way of etching
It states in layers of copper.
7. a kind of IGBT device, which is characterized in that the IGBT device includes: the substrate of chip and the carrying chip, institute
Chip and the encapsulation of substrate integral type are stated, the substrate is DBC substrate as claimed in any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822209789.8U CN209056478U (en) | 2018-12-27 | 2018-12-27 | DBC substrate and IGBT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822209789.8U CN209056478U (en) | 2018-12-27 | 2018-12-27 | DBC substrate and IGBT device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209056478U true CN209056478U (en) | 2019-07-02 |
Family
ID=67055365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822209789.8U Active CN209056478U (en) | 2018-12-27 | 2018-12-27 | DBC substrate and IGBT device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209056478U (en) |
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2018
- 2018-12-27 CN CN201822209789.8U patent/CN209056478U/en active Active
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