CN209005523U - The processing system of the exhaust gas generated in silicon wafer cutting process - Google Patents
The processing system of the exhaust gas generated in silicon wafer cutting process Download PDFInfo
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- CN209005523U CN209005523U CN201821008418.7U CN201821008418U CN209005523U CN 209005523 U CN209005523 U CN 209005523U CN 201821008418 U CN201821008418 U CN 201821008418U CN 209005523 U CN209005523 U CN 209005523U
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Abstract
The processing system of the exhaust gas generated in a kind of silicon wafer cutting process, comprising: the acid solution spray column that sets gradually, the lye spray column being connected to acid solution spray column top, the oxidant spray column being connected to lye spray column top；Wherein, acid solution spray column is equipped with acid solution spray thrower, and lye spray thrower is equipped in lye spray column, is equipped with oxidant spray thrower in oxidant spray column.Above-mentioned exhaust treatment system structure is simple, and acid solution spray column, lye spray column, oxidant spray column are serially connected.The pernicious gas of the alkalinity generated in silicon wafer cutting process, acidity and the free radical containing OH can effectively be removed.
Description
Technical field
The utility model relates to silicon wafers to cut field, more particularly to a kind of place of the exhaust gas generated in silicon wafer cutting process
Reason system.
Background technique
During silicon wafer cut by diamond wire, a large amount of waste water can be generated, the degradation process of harmful substance in waste water
In, and big medicine amount liquid need to be added and reacted therewith, large quantity of exhaust gas will certainly be so generated, and containing a large amount of in exhaust gas
Pernicious gas.For example, the pernicious gas of harmful sour gas, alkaline gas and the free radical containing OH, these pernicious gases
It is discharged into atmosphere, seriously pollutes ambient enviroment.Such as it needs that sulfuric acid, ammonia salt is added in wastewater treatment process.Wherein, sulfate radical from
Son is in subsequent anaerobic environment, under the action of reducing bacteria, will be reduced to hydrogen sulfide gas, and ammonia salt is in wastewater treatment
Ammonia can be generated in the process.
Utility model content
Based on this, it is necessary to aiming at the problem that exhaust emission environment generated in silicon wafer cutting process, provide a kind of pair of silicon
The exhaust treatment system that the exhaust gas generated in piece cutting process is handled to reduce environmental pollution.
The processing system of the exhaust gas generated in a kind of silicon wafer cutting process, comprising: the acid solution spray column set gradually and institute
The lye spray column for stating the connection of acid solution spray column top, the oxidant spray column being connected to lye spray column top；Wherein,
The acid solution spray column is equipped with acid solution spray thrower, is equipped with lye spray thrower, the oxidant spray column in the lye spray column
In be equipped with oxidant spray thrower.
Above-mentioned exhaust treatment system structure is simple, and acid solution spray column, lye spray column, oxidant spray column are mutually gone here and there
Connection.The pernicious gas of the alkalinity generated in silicon wafer cutting process, acidity and the free radical containing OH can effectively be removed.
It in one of the embodiments, further include the ionization purifiers being connected to oxidant spray column top.
The ionization purifiers are low-temperature plasma VOCs clarifier in one of the embodiments,.
It in one of the embodiments, further include the activated carbon adsorption device being connected to the ionization purifiers.
In one of the embodiments, further include the aspiration pump for being installed on acid solution spray column bottom end, is used for silicon wafer
The exhaust gas generated in cutting process sucks in the acid solution spray column.
The activated carbon adsorption device is provided with activated carbon adsorption layer in one of the embodiments,.
The partial size of the active carbon in the activated carbon adsorption layer is 2mm-4mm in one of the embodiments,.
The acid solution spray thrower is located at the top of the acid solution spray column, the lye spray in one of the embodiments,
Leaching device is located at the top of the lye spray column, and the oxidant spray thrower is located at the top of the oxidant spray column.
The surface of the spray head of the acid solution spray thrower offers several equally distributed in one of the embodiments,
Hole, the surface of the spray head of the lye spray thrower offer several equally distributed holes, the spray of the oxidant spray thrower
The surface of head offers several equally distributed holes.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the exhaust treatment system in the utility model.
Specific embodiment
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, below in conjunction with specific implementation
Mode, the present invention will be further described in detail.It should be appreciated that the specific embodiments described herein are only used to
It explains the utility model, is not used to limit the utility model.
Unless otherwise defined, all technical and scientific terms used herein are led with the technology for belonging to the utility model
The normally understood meaning of the technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term " and or " used herein packet
Include any and all combinations of one or more related listed items.
Refering to fig. 1, an embodiment of the present invention is a kind of processing system of the exhaust gas generated in silicon wafer cutting process
100, which includes: the acid solution spray column 110 set gradually, the alkali that is connected to 110 top of acid solution spray column
Liquid spray column 120, the oxidant spray column 130 being connected to 120 top of lye spray column, it is preferable that acid solution spray column 110, alkali
Liquid spray column 120, oxidant spray column 130 are connected to by waste gas delivery pipeline 410.
Wherein, acid solution spray thrower 210 is provided in acid solution spray column 110, the exhaust gas generated in silicon wafer cutting process is through receiving
After entering acid solution spray column 110 from the bottom inlet end of acid solution spray column 110 after collection, exhaust gas is diffused up, and opens acid solution at this time
Spray thrower 210 sprays acid solution to exhaust gas surface.At this point, to absorb the alkaline gas in exhaust gas and neutralization reaction occur therewith, so
Acid solution carries the alkaline gas absorbed and is fallen naturally by gravity afterwards, into the acid solution that 110 bottom of acid solution spray column is arranged in
In accumulator tank (not shown), not by the exhaust gas of acid solution absorption because density gently continues to rise the top from acid solution spray column 110
Outlet discharge, into next spray column.Of course, it should be understood that in order to keep the exhaust gas not chemically reacted quick
Into in next spray column, also first aspiration pump can be set on the top of acid solution spray column 110, accelerate gas flowing, rapidly
It enters in next spray column.
In a preferred embodiment, it can also continue to utilize into the acid solution in acid solution accumulator tank, pass through conveying
Pipeline is again introduced into acid solution spray thrower 210, and circulated sprinkling recycles acid solution.
In a preferred embodiment, acid solution spray thrower 210 is installed on the top of acid solution spray column 110.The acid sprayed in this way
Liquid drips from top to bottom, can with drive in the wrong direction and on exhaust gas as much as possible come into full contact with.
In a preferred embodiment, the surface of the spray head of acid solution spray thrower 210 offers equally distributed hole, acid solution spray
First hydraulic pump is installed inside leaching device 210.When work, the first hydraulic pump pressurizes to acid solution, from the surface hole defect of spray head
The acid solution of atomization is uniformly sprayed, the drop uniformly sprayed can come into full contact with exhaust gas as much as possible, to absorb in exhaust gas
More alkaline gas.
It in a preferred embodiment, further include the aspiration pump (not shown) for being installed on acid solution spray column bottom end,
Exhaust gas for will generate in silicon wafer cutting process sucks in the acid solution spray column.Such benefit be can quickly collect from
The exhaust gas generated in the purification tank for liquid waste of each silicon wafer cutting, and then exhaust gas centralized processing is carried out, improve exhaust treatment efficiency.
Wherein, lye spray thrower 220 is provided in lye spray column 120, the exhaust gas generated in silicon wafer cutting process is through receiving
After entering lye spray column 120 from the bottom inlet end of lye spray column 120 after collection, exhaust gas is diffused up, and opens lye at this time
Spray thrower 220 sprays acid solution to exhaust gas surface.At this point, to absorb the sour gas in exhaust gas and neutralization reaction occur therewith, so
Lye carries the sour gas absorbed and is fallen naturally by gravity afterwards, into the lye that 120 bottom of lye spray column is arranged in
In accumulator tank (not shown), then do not continued to rise going out from the top of lye spray column 120 by the exhaust gas that lye absorbs
Mouth discharge, into next spray column.Of course, it should be understood that in order to rapidly enter the exhaust gas not chemically reacted
In next spray column, also second aspiration pump can be set on the top of lye spray column 120, accelerate gas flowing, quickly enter
Into next spray column.
In a preferred embodiment, it can also continue to utilize into the lye in recycle of alkali liquor slot, pass through conveying
Pipeline is again introduced into lye spray thrower 220, and circulated sprinkling recycles lye.
In a preferred embodiment, lye spray thrower 220 is installed on the top of lye spray column 120.The alkali sprayed in this way
Liquid drips from top to bottom, can with drive in the wrong direction and on exhaust gas as much as possible come into full contact with.
In a preferred embodiment, the surface of the spray head of lye spray thrower 220 offers equally distributed hole, lye spray
Second hydraulic pump is installed inside leaching device 220.When work, the second hydraulic pump pressurizes to lye, from the surface hole defect of spray head
The lye of atomization is uniformly sprayed, the drop uniformly sprayed can come into full contact with exhaust gas as much as possible, to absorb in exhaust gas
More sour gas.
Wherein, oxidant spray thrower 230, the exhaust gas generated in silicon wafer cutting process are provided in oxidant spray column 130
After entering oxidant spray column 130 from the bottom inlet end of oxidant spray column 130 after collecting, exhaust gas is diffused up, at this time
Oxidant spray thrower 230 is opened, sprays acid solution to exhaust gas surface.At this point, to absorb the gas of the free radical containing OH in exhaust gas simultaneously
Neutralization reaction occurs therewith, the gas that then oxidant carries the free radical containing OH absorbed is fallen naturally by gravity, is entered
It is arranged in the oxidant accumulator tank (not shown) of 130 bottom of oxidant spray column, exhaust gas, which continues to rise from oxidant, to be sprayed
The outlet discharge for drenching the top of tower 130, into next process.Of course, it should be understood that chemical anti-in order to make not occur
The exhaust gas answered rapidly enters in next spray column, also third aspiration pump can be arranged on the top of oxidant spray column 130, accelerate
Gas flowing, quickly enters next process.
In a preferred embodiment, it can also continue to utilize into the oxidant in oxidant accumulator tank, pass through
Conveyance conduit is again introduced into oxidant spray thrower 230, and circulated sprinkling recycles oxidant.
In a preferred embodiment, oxidant spray thrower 230 is installed on the top of oxidant spray column 130.It sprays in this way
Oxidant drip from top to bottom, can with drive in the wrong direction and on exhaust gas as much as possible come into full contact with.
In a preferred embodiment, the surface of the spray head of oxidant spray thrower 230 offers equally distributed hole, oxidation
Third hydraulic pump is installed inside agent spray thrower 230.When work, third hydraulic pump pressurizes to oxidant, from the surface of spray head
The oxidant drop of atomization is uniformly sprayed in hole, the drop uniformly sprayed can come into full contact with exhaust gas as much as possible, with
Absorb the gas of more free radicals containing OH in exhaust gas.
It in a preferred embodiment, further include the ionization purifiers 140 being connected to 130 top of oxidant spray column.
The main function of ionization purifiers 140 is to be ionized a small amount of gas molecule to generate active particle, and is remained in exhaust gas
Pollutant continues to react, and is eventually converted into the substances such as water and carbon dioxide.Wherein, residual contaminants include being difficult to acid
Liquid, lye, the foul gas of oxidation solution removing, toxic and harmful gas are (for example, sulfur-containing compound, nitrogenous compound, chloride containing close
Object etc.).
Preferably, the ionization purifiers 140 are low-temperature plasma VOCs clarifier.Its principle is using bi-medium to block
Discharge type generates high energy electron, free radical isoreactivity particle irradiation, ionization, the sulfur-containing compound in cracking exhaust gas, nitrogen
Close object, chlorine-containing compound and be allowed to the chemical reaction such as decompose, aoxidize, by multistage purification, thus reach make it is poisonous and harmful
Exhaust gas reaches low toxicityization, Non-toxic.
It in a preferred embodiment, further include the activated carbon adsorption device 150 being connected to the ionization purifiers 140.It is logical
It crosses physical absorption and further absorbs unadsorbed remaining toxic and harmful gas, especially foul gas.
In a preferred embodiment, the partial size of the active carbon in the activated carbon adsorption layer is 2mm-4mm.Its absorption is toxic
The effect of pernicious gas is more preferable.
Above-mentioned exhaust treatment system structure is simple, and acid solution spray column, lye spray column, oxidant spray column are mutually gone here and there
Connection.The pernicious gas of the alkalinity generated in silicon wafer cutting process, acidity and the free radical containing OH can effectively be removed.
Waste gas treatment process is illustrated in conjunction with Fig. 1.Arrow direction is the exhaust gas generated in silicon wafer cutting process in Fig. 1
Flow direction, the exhaust gas in waste gas delivery pipeline 410 successively passes through acid solution spray column 110, lye spray column 120, oxidant spray
After drenching the processing of tower 130, after low-temperature plasma VOCs clarifier 140, into activated carbon adsorption device 150, it is then discharged out
The system, at this point, exhaust gas has met environmental emission standard.
The orientation of the instructions such as top, bottom end herein is all based on what position relation shown in the drawings was illustrated, is
Clearer, the concise structure for illustrating the utility model, should not be understood as limiting the present invention.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it cannot be understood as the limitations to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (9)
1. a kind of processing system of the exhaust gas generated in silicon wafer cutting process characterized by comprising the acid solution spray set gradually
Leaching tower, the lye spray column being connected to acid solution spray column top, the oxidant spray being connected to lye spray column top
Drench tower；Wherein, the acid solution spray column is equipped with acid solution spray thrower, is equipped with lye spray thrower, the oxygen in the lye spray column
Oxidant spray thrower is equipped in agent spray column.
2. the processing system of the exhaust gas generated in silicon wafer cutting process according to claim 1, which is characterized in that further include
The ionization purifiers being connected to oxidant spray column top.
3. the processing system of the exhaust gas generated in silicon wafer cutting process according to claim 2, which is characterized in that the electricity
It is low-temperature plasma VOCs clarifier from clarifier.
4. the processing system of the exhaust gas generated in silicon wafer cutting process according to claim 2, which is characterized in that further include
The activated carbon adsorption device being connected to the ionization purifiers.
5. the processing system of the exhaust gas generated in silicon wafer cutting process according to claim 1, which is characterized in that further include
It is installed on the aspiration pump of acid solution spray column bottom end, the exhaust gas for will generate in silicon wafer cutting process sucks the acid solution spray
It drenches in tower.
6. the processing system of the exhaust gas generated in silicon wafer cutting process according to claim 4, which is characterized in that the work
Property charcoal adsorbent equipment is provided with activated carbon adsorption layer.
7. the processing system of the exhaust gas generated in silicon wafer cutting process according to claim 6, which is characterized in that the work
Property charcoal adsorption layer in active carbon partial size be 2mm-4mm.
8. the processing system of the exhaust gas generated in silicon wafer cutting process according to claim 1, which is characterized in that the acid
Liquid spray thrower is located at the top of the acid solution spray column, and the lye spray thrower is located at the top of the lye spray column, described
Oxidant spray thrower is located at the top of the oxidant spray column.
9. the processing system of the exhaust gas generated in silicon wafer cutting process according to claim 1, which is characterized in that the acid
The surface of the spray head of liquid spray thrower offers several equally distributed holes, and the surface of the spray head of the lye spray thrower opens up
There are several equally distributed holes, the surface of the spray head of the oxidant spray thrower offers several equally distributed holes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821008418.7U CN209005523U (en) | 2018-06-27 | 2018-06-27 | The processing system of the exhaust gas generated in silicon wafer cutting process |
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| CN201821008418.7U CN209005523U (en) | 2018-06-27 | 2018-06-27 | The processing system of the exhaust gas generated in silicon wafer cutting process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110449012A (en) * | 2019-09-17 | 2019-11-15 | 无锡诚尔鑫环保装备科技有限公司 | The device systems of textile dyeing and finishing waste gas pollution control and treatment |
| CN115475501A (en) * | 2022-09-27 | 2022-12-16 | 中国电子科技集团公司第四十八研究所 | Sufficient therapeutic instrument waste gas of diabetes absorbs processing apparatus |
-
2018
- 2018-06-27 CN CN201821008418.7U patent/CN209005523U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110449012A (en) * | 2019-09-17 | 2019-11-15 | 无锡诚尔鑫环保装备科技有限公司 | The device systems of textile dyeing and finishing waste gas pollution control and treatment |
| CN115475501A (en) * | 2022-09-27 | 2022-12-16 | 中国电子科技集团公司第四十八研究所 | Sufficient therapeutic instrument waste gas of diabetes absorbs processing apparatus |
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