CN208970516U - A kind of back laser slotting pattern reducing monocrystalline PERC battery angularity - Google Patents

A kind of back laser slotting pattern reducing monocrystalline PERC battery angularity Download PDF

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Publication number
CN208970516U
CN208970516U CN201821307363.XU CN201821307363U CN208970516U CN 208970516 U CN208970516 U CN 208970516U CN 201821307363 U CN201821307363 U CN 201821307363U CN 208970516 U CN208970516 U CN 208970516U
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line
spot
processing
length
angularity
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CN201821307363.XU
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Chinese (zh)
Inventor
刘文超
梁玲
贾雪平
周凡
张波
申开愉
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Shanxi Luan Solar Energy Technology Co Ltd
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Shanxi Luan Solar Energy Technology Co Ltd
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Abstract

The utility model relates to solar battery sheet laser slotting field.A kind of back laser slotting pattern reducing monocrystalline PERC battery angularity, it is made of the spot (3) of laser hollow out of array arrangement and the processing line for the laser hollow out being parallel to each other, spot (3) diameter is 29 μm, between be divided into 100 μm, spot (3) forms at equal intervals simultaneously parallel lateral spot line and simultaneously parallel longitudinal spot line at equal intervals, the spacing of adjacent two processing lines is 0.6 mm, every processing line is made of equally spaced dotted line (1) and solid line (2), the width of processing line is 29 μm, solid line (2) length 7mm, the length of dotted line (1) is 7mm, dotted line (1) by three sections at equal intervals equal length line constitute, three sections of line total lengths of dotted line (1) are 3.65mm, distance of the processing line apart from monocrystalline PERC battery edge is 1.5-1.75m M.Battery angularity is not only reduced, while improving battery conversion efficiency.

Description

A kind of back laser slotting pattern reducing monocrystalline PERC battery angularity
Technical field
The utility model relates to solar battery sheet laser slotting field.
Background technique
Currently, to reduce production cost, many efficient single crystal battery production firms of PERC use the monocrystalline of 180 micron thickness Silicon wafer.Using it is such will lead to compared with thin silicon wafer cell piece is made after, cell piece angularity is larger, hence it is evident that is higher than professional standard (2 Mm).
Summary of the invention
The technical problem to be solved by the utility model is to how to reduce cell piece angularity.
The technical scheme adopted by the utility model is a kind of back laser slotting figure for reducing monocrystalline PERC battery angularity Case is made of, spot (3) diameter the spot (3) of laser hollow out of array arrangement and the processing line for the laser hollow out being parallel to each other It is 29 μm, is divided into 100 μm, spot (3) forms at equal intervals simultaneously parallel lateral spot line and simultaneously parallel longitudinal spot at equal intervals The spacing of dotted line, adjacent two processing lines is 0.6 mm, and every processing line is made of equally spaced dotted line (1) and solid line (2), work The width of skill line is 29 μm, solid line (2) length 7mm, and the length of dotted line (1) is 7mm, and dotted line (1) is by three sections of equal lengths at equal intervals Line is constituted, and three sections of line total lengths of dotted line (1) are 3.65mm, and distance of the processing line apart from monocrystalline PERC battery edge is 1.5- 1.75mm。
The beneficial effects of the utility model are: not only reducing battery angularity, while improving battery conversion efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model;
Wherein, 1, dotted line, 2, solid line, 3, spot.
Specific embodiment
It is carried out as shown in Figure 1 when carrying on the back laser slotting according to following step:
Step 1: monocrystalline PERC battery back carries out lateral spot and longitudinal spot scans at equal intervals, lateral spot is formed Line and longitudinal spot line, 3 diameter of spot are 29 μm, are divided into 100 μm;
Step 2: laser scanning production back laser pattern, laser spot diameter is 29 μm, by the work for the hollow out being parallel to each other Skill line is constituted, and the spacing of adjacent two processing lines is 0.6 mm, and every processing line is made of the dotted line 1 and solid line 2 being spaced, solid line 2 length 7mm, the length of dotted line 1 are 7mm, dotted line 1 by three sections at equal intervals equal length line constitute, three sections of line total lengths of dotted line 1 are 3.65mm, distance of the processing line apart from monocrystalline PERC battery edge are 1.5-1.75mm.
It is 1.7s that this monocrystalline PERC, which carries on the back Laser exposure dwell times,.The line width of every solid line and dotted line is 29 μm, adjacent two works The spacing of skill line is 0.6 mm, the solid line and 375 sections of dotted lines separated of totally 375 sections of separation.Real empty than being 50%, total percent opening is 3.15%.The present embodiment is on the basis of percent opening variation is little, the image combined using solid line with dotted line, different from common whole Root solid line laser rays reduces cell piece angularity significant effect.

Claims (1)

1. a kind of back laser slotting pattern for reducing monocrystalline PERC battery angularity, it is characterised in that: the laser arranged by array The processing line of the spot (3) of hollow out and the laser hollow out being parallel to each other is constituted, and spot (3) diameter is 29 μm, is divided into 100 μm, Spot (3) forms at equal intervals simultaneously parallel lateral spot line and simultaneously parallel longitudinal spot line at equal intervals, adjacent two processing lines Spacing be 0.6 mm, every processing line be made of equally spaced dotted line (1) and solid line (2), and the width of processing line is 29 μm, reality Line (2) length 7mm, the length of dotted line (1) are 7mm, dotted line (1) by three sections at equal intervals equal length line constitute, three sections of dotted line (1) Line total length is 3.65mm, and distance of the processing line apart from monocrystalline PERC battery edge is 1.5-1.75mm.
CN201821307363.XU 2018-08-11 2018-08-11 A kind of back laser slotting pattern reducing monocrystalline PERC battery angularity Active CN208970516U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821307363.XU CN208970516U (en) 2018-08-11 2018-08-11 A kind of back laser slotting pattern reducing monocrystalline PERC battery angularity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821307363.XU CN208970516U (en) 2018-08-11 2018-08-11 A kind of back laser slotting pattern reducing monocrystalline PERC battery angularity

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CN208970516U true CN208970516U (en) 2019-06-11

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115000198A (en) * 2022-07-18 2022-09-02 浙江晶科能源有限公司 Solar cell and photovoltaic module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115000198A (en) * 2022-07-18 2022-09-02 浙江晶科能源有限公司 Solar cell and photovoltaic module

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