CN208954947U - Wafer processing device and multi-chamber Wafer processing apparatus - Google Patents
Wafer processing device and multi-chamber Wafer processing apparatus Download PDFInfo
- Publication number
- CN208954947U CN208954947U CN201821911548.1U CN201821911548U CN208954947U CN 208954947 U CN208954947 U CN 208954947U CN 201821911548 U CN201821911548 U CN 201821911548U CN 208954947 U CN208954947 U CN 208954947U
- Authority
- CN
- China
- Prior art keywords
- baffle
- main baffle
- wafer
- chamber housing
- wafer processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A kind of wafer processing device and multi-chamber Wafer processing apparatus, the wafer processing device include: processing chamber housing, are relatively set with spray head and heater in the processing chamber housing；Locker room is disposed adjacent with the processing chamber housing, for storing main baffle and secondary baffle, is connected between locker room and processing chamber housing by a transmission mouth, is transmitted and be provided with a gate valve at mouth, for controlling the unlatching and closure of the transmission mouth；Manipulator, it is set in the locker room, there are two independent tache motorices for tool, for grabbing the main baffle and secondary baffle respectively, when needing to carry out pre-add heat treatment to wafer, the manipulator is for main baffle to be moved between the spray head and the heater；And in main baffle moving process, the manipulator is also used to control the secondary baffle and is located at below the main baffle, follows the main baffle synchronizing moving.The wafer processing device can be avoided the escaping gas generated when preheating to wafer and be adsorbed on spray head.
Description
Technical field
The utility model relates to field of semiconductor devices more particularly to a kind of wafer processing device and multi-chamber wafer-process
Equipment.
Background technique
In semiconductor chip manufacturing industry, preheating (Preheating) is the common features in equipment.Its principle be
Before wafer process, crystal column surface residual substance is set to become the process being pumped away again after gas with heating method.Crystal column surface
The ingredient of residual substance is usually residue of wafer after preceding road technique.But actual conditions are, heater pair in cavity
Wafer is preheated, and most of residual gas can be pumped, but still has small part residual gas that can be attached on spray head.It is attached
Residual gas on spray head may condense into solid impurity, it is also possible to the technique sprayed with spray head in subsequent technique
Gas occurs chemical reaction and generates solid impurity.Will cause in this way spray head hole blocking, solid impurity fall to heater or
Crystal column surface causes the maintenance period of cavity to shorten.
How to avoid the residual gas of preheating process from being attached on spray head, is current urgent problem to be solved.
Utility model content
Technical problem to be solved by the utility model is to provide a kind of wafer processing devices and multi-chamber wafer-process to set
It is standby, avoid residual gas in preheating process from being attached on spray head.
To solve the above-mentioned problems, the utility model provides a kind of wafer processing device, comprising: processing chamber housing, it is described
Spray head and heater are relatively set in processing chamber housing, the heater is for placing wafer；Locker room, with the processing chamber
Room is disposed adjacent, for storing two baffles, respectively main baffle and secondary baffle, between the locker room and the processing chamber housing
By a transmission mouth connection, it is provided with a gate valve at the transmission mouth, for controlling the unlatching and closure of the transmission mouth；It is mechanical
Hand is set in the locker room, manipulator tool there are two independent tache motorice, for grab respectively the main baffle and
Secondary baffle, when need to wafer carry out pre-add heat treatment when, the manipulator be used for by main baffle be moved to the spray head and
Between the heater；And in main baffle moving process, the manipulator is also used to control the secondary baffle and is located at the master
Below baffle, the main baffle synchronizing moving is followed；When main baffle position is fixed, the manipulator is used for the secondary baffle
It is retracted in the locker room.
Optionally, the size of the secondary baffle is greater than the size of the main baffle.
Optionally, the manipulator includes pedestal and two scalable mechanical arms, scalable mechanical arm one end connection
To the pedestal, the other end is used to deposit baffle by stretching motion for grabbing the baffle, the scalable mechanical arm
It is moved between storage chamber and processing chamber housing.
Optionally, the manipulator includes pedestal and two mechanical arms, described mechanical arm one end by a shaft with it is described
Pedestal connection, the other end are used to store baffle by rotating around the shaft for grabbing the baffle, the mechanical arm
It is moved between room and processing chamber housing.
Optionally, the main baffle has an at least rough surface, when main baffle is moved to the spray by the manipulator
When drenching between head and the heater, the rough surface is towards the heater.
Optionally, the rough surface include in tapered protrusion layer, matte surface and blasting treatment rear surface at least
It is a kind of.
Optionally, the transmission mouth edge is provided with air injection unit, and the air injection unit is used to be connected to inert gas source,
When the gate valve is opened, the jet at transmission mouth forms the gas curtain between locker room and processing chamber housing.
Optionally, vacuum line is provided in the main baffle, described vacuum line one end is connected to the main baffle table
Face, the other end are connected to pumping cells.
Optionally, the spray head and the main baffle are circle, and the diameter of the main baffle is greater than the spray head
Diameter.
The technical solution of the utility model also provides a kind of multi-chamber Wafer processing apparatus, including at least two any of the above-described
Wafer processing device described in.
The wafer processing device of the utility model includes one for storing the locker room of main baffle and secondary baffle, can located
During chamber is managed to wafer progress preheating, main baffle is set between the heater of processing chamber housing and spray head, is kept away
Exempt from the gas that crystal column surface volatilizees in preheating process to be attached on spray head；And during mobile main baffle, pair gear
Plate, which is located at below the main baffle, follows main baffle mobile, can accept the impurity particle fallen on main baffle.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the wafer processing device of one specific embodiment of the utility model；
Fig. 2 is that the main baffle of the wafer processing device of one specific embodiment of the utility model and secondary baffle are moved to processing
The indoor structural schematic diagram of chamber；
Fig. 3 to Fig. 4 is the structural schematic diagram of the wafer processing device of one specific embodiment of the utility model；
Fig. 5 to Fig. 7 is the structural schematic diagram of the main baffle of one specific embodiment of the utility model；
Fig. 8 A to Fig. 8 D be one specific embodiment of the utility model to wafer carry out preheating it is each during, institute
State the position view of main baffle and secondary baffle；
Fig. 9 is the structural schematic diagram of the wafer processing device of one specific embodiment of the utility model；
Figure 10 is the structural schematic diagram of the multi-chamber Wafer processing apparatus of one specific embodiment of the utility model.
Specific embodiment
With reference to the accompanying drawing to the specific of wafer processing device provided by the utility model and multi-chamber Wafer processing apparatus
Embodiment elaborates.
Referring to FIG. 1, the structural schematic diagram of the wafer processing device for one specific embodiment of the utility model.
The wafer processing device includes: processing chamber housing 110, locker room 120, the machine being set in the locker room 120
Tool hand 130 and two baffles, respectively main baffle 121 and secondary baffle 122.
Spray head 201 and heater 202, the spray head 201 and heater 202 are provided in the processing chamber housing 110
It is oppositely arranged.In the specific embodiment, the spray head 201 is set to the top of the processing chamber housing 110, the heater
202 are set to the lower section of the spray head 201.The heater 202 has horizontal surface, for placing wafer to be processed.
For example, the heater 202 can be the wafer base station with heating function.The spray head 201 is used in semiconductor processes
In the process, process gas is sprayed to the wafer for being placed in 202 surface of heater.
During carrying out preheating to wafer, wafer to be processed is placed in 202 surface of heater, with heater
The chemical residual of the preheating of 202 pairs of wafers, crystal column surface can volatilize for gas.
The locker room 120 is disposed adjacent with the processing chamber housing 110, for storing the main baffle 121 and secondary baffle
122.The locker room 120 has independent cavity space with processing chamber housing 110.In the specific embodiment, the locker room
There is a common chamber wall between 120 and processing chamber housing 110.For the ease of being passed between locker room 120 and processing chamber housing 110
The main baffle 121 and secondary baffle 122 are passed, is connected between the locker room 120 and processing chamber housing 110 by a transmission mouth, institute
It states and is provided with a gate valve 111 at transmission mouth, for controlling the unlatching and closure of the transmission mouth.The gate valve 111 can be liter
Drop formula gate valve 111 controls the jacking condition of the gate valve 111 by a controller.It, can also be in other specific embodiments
It is used to control the unlatching and closure of the transmission mouth using other kinds of gate valve 111.
In other specific embodiments, the locker room 120 can also be provided separately with processing chamber housing 110.At this point, institute
Stating can be connected between locker room 120 and processing chamber housing 110 by a Transfer pipe, and main baffle 121 and secondary baffle 122 can be through
It is transmitted between locker room 120 and processing chamber housing 110 by the Transfer pipe.
The manipulator 130 is set in the locker room 120, and there are two independent movements for the tool of manipulator 130
End is respectively used to grab the main baffle 121 and secondary baffle 122.When the heater 202 needs to carry out at preheating wafer
When reason, the manipulator 130 is adsorbed for main baffle 121 to be moved between the spray head 201 and the heater 202
And the gas for stopping crystal column surface to volatilize flows up, and avoids crystal column surface volatilization gas from contacting with spray head 201, prevents from spraying
Leaching 201 surface of head forms impurity deposition and blocks spray head 201.
Meanwhile during movement main baffle 121, the manipulator 130 is also used to control the secondary baffle 122
Positioned at 121 lower section of main baffle, 121 synchronizing moving of main baffle is followed；When 121 position of main baffle is fixed, the machine
Tool hand 130 is used to for the secondary baffle 122 being retracted in the locker room 120.The pair baffle 122 is in the main baffle 121
In moving process, it is located at 121 lower section of the main baffle, it can be to avoid being adsorbed in the impurity particle adsorbed on the main baffle 121
Fall to heater 202 or crystal column surface.
The manipulator 130 includes pedestal 131, first mechanical arm 132 and second mechanical arm 133.The specific embodiment
In, the first mechanical arm 132 and second mechanical arm 133 are scalable mechanical arm, and the second mechanical arm 133 is located at institute
State 132 lower section of first mechanical arm.The pedestal 131 is fixed in the locker room 120, the first mechanical arm 132 and second
One end of mechanical arm 133 is connected to the base 131, and the other end is respectively used to grab the main baffle 121 and secondary baffle 122.
The first mechanical arm 132 and second mechanical arm 133 are used to store main baffle 121 and secondary baffle 122 by stretching motion
It is moved between room 120 and processing chamber housing 110.In this specific embodiment, the described first scalable mechanical arm 132 and second can
Telescopic mechanical arm 133 can carry out stretching motion in one-dimensional direction.
Referring to FIG. 2, the first mechanical arm 132 and second mechanical arm 133 can extend to processing by the transmission mouth 112
In chamber 110, main baffle 121 and secondary baffle 122 are placed between spray head 201 and heater 202, and secondary baffle 122 is located at
121 lower section of main baffle.It can be by adjusting the first mechanical arm 132, the height of second mechanical arm 133, to adjust master
The height of baffle 121 and secondary baffle 122.
Fig. 3 and Fig. 4 are please referred to, in another specific embodiment, the manipulator includes pedestal 401, first mechanical arm
402 and second mechanical arm (not shown).Described Fig. 3 and Fig. 4 is schematic top plan view, due to second mechanical arm and secondary gear
Plate is respectively positioned below the first mechanical arm 402 and main baffle 121 and is blocked, therefore second mechanical arm is not shown in Fig. 3 and Fig. 4
And secondary baffle.
It is example with the first mechanical arm 402 and main baffle 121, Fig. 3 is that main baffle 121 is located at the locker room 120
Interior schematic top plan view；Fig. 4 is that the main baffle 121 is located at the schematic top plan view in the processing chamber housing 110.First machine
402 one end of tool arm is connect by a shaft with the pedestal 401, and the other end is for grabbing the main baffle 121.First machine
Tool arm 402 can rotate in the horizontal plane around the shaft.The pedestal 401 is arranged close to the transmission mouth 112, first mechanical arm
It, can be by the transmission mouth 112, into the processing chamber housing 110, thus by main baffle during 402 rotate around the shaft
121 are sent into processing chamber housing 110, are placed between spray head and heater 202 (please referring to Fig. 3).The first mechanical arm 402 can
Think regular length, it is possible to have Telescopic, further to adjust the position of main baffle 121.The second mechanical arm with
The structure having the same of first mechanical arm 402, can prismatic pair baffle in the same way, details are not described herein.
In order to enable main baffle 121 can play effective barrier effect, the size of the main baffle 121 is greater than spray head
201 size.In this specific embodiment, the spray head 201 is circle, and the main baffle 121 is also circle, and described
The diameter of main baffle 121 is greater than the diameter of the spray head 201.In other specific embodiments, the main baffle 121 can also
Think any one of rectangle, polygon, circle etc..
When the main baffle 121 is between the spray head 201 and the heater 202, the main baffle 121 and institute
The distance between spray head 201 is stated less than the distance between the main baffle 121 and described heater 202, to the spray head
201 play the role of preferably blocking.Preferably, the distance between the main baffle 121 and spray head 201 are less than 10cm.
In order to improve the adsorption capacity for the gas that main baffle 121 volatilizees to 140 surface of wafer, the main baffle 121 may be used also
To have an at least rough surface, when main baffle 121 is moved to the spray head 201 and the heating by the manipulator 130
When between device 202, the rough surface is towards the heater 202.The rough surface is capable of increasing gas and main baffle 121
Contact area, to improve main baffle 121 to the adsorption capacity of gas.
Referring to FIG. 5, in a specific embodiment, the rough surface of the main baffle 121 includes tapered protrusion layer,
Specifically, pyramid protrusion 601 is distributed on the rough surface.Referring to FIG. 6, in another specific embodiment, institute
It states and hemispherical projections 701 is distributed on rough surface.
In other specific embodiments, the rough surface of the main baffle 121 can also be matte surface or sandblasting
Handle the various forms such as rear surface.
In the specific embodiment, only a side surface is rough surface to the main baffle 121, is used for towards heater 202
Setting.In other specific embodiments, the upper and lower surface of the main baffle 121 is rough surface.
Referring to FIG. 7, in order to further increase suction-operated of the main baffle 121 to 140 surface volatilization gas of wafer, another
In one specific embodiment, vacuum line 801 is additionally provided in the main baffle 121, described 801 one end of vacuum line is connected to
121 surface of main baffle, the other end are connected to pumping cells.The part vacuum line 801 may be disposed at first mechanical arm
In 132, to extend to pumping cells.During to wafer preheating, 121 one side of main baffle can stop to volatilize
Gas is flowed up to be contacted with spray head 201, and is adsorbed to volatilization gas；On the other hand, the vacuum tube can be passed through
Road 801 will volatilize gas and directly extract out out of processing chamber housing 110.
In order to improve in 121 moving process of main baffle, undertaking of the secondary baffle 122 to the impurity fallen on main baffle 121
The size of effect, the pair baffle 122 can be greater than the size of the main baffle 121.In this specific embodiment, the master
Baffle 122 and secondary baffle 121 are circle, and the diameter of the secondary baffle 121 is greater than the diameter of the main baffle 122.
Fig. 8 A~8D is please referred to, is that each mistake of preheating is carried out to wafer in one specific embodiment of the utility model
Cheng Zhong, the position view of the main baffle 121 and secondary baffle 122.
Fig. 8 A is please referred to, when the wafer processing device needs to carry out pre-add heat treatment to wafer to be processed, in wafer
The processing chamber housing 110 is moved into before the processing chamber housing 110, while by the main baffle 121 and secondary baffle 122
It is interior, so that the main baffle 121 is between the spray head 201 and heater 202, in moving process, the pair baffle 122
Immediately below the main baffle 121, for accepting the impurity particle fallen on the main baffle 121.
Fig. 8 B is please referred to, the secondary baffle 122 is removed from the processing chamber housing 110, is retracted to the locker room 120
It is interior；Wafer 140 enters in the processing chamber housing 110, is placed on the heater 202, carries out at preheating to the wafer 140
Reason.
Please referring to Fig. 8 C, preheating moves into the secondary baffle 122 in the processing chamber housing 110 after processing terminate, until
The underface of the main baffle 121.
Fig. 8 D is please referred to, while the main baffle 121 and secondary baffle 122 being retracted in the locker room 120, and is closed
The locker room 120 and processing chamber housing 110 are isolated the gate valve 111.Spray head 201 is to 140 surface spray processing gas of wafer
Body carries out semiconductor technology processing to the wafer 140.
Referring again to Fig. 8 B, the wafer 140 is when carrying out pre-add heat treatment, the locker room 120 and processing chamber housing
Gate valve 111 between 110 is in an open state, and is connected between processing chamber housing 110 and locker room 120 by transmitting mouth 112.To wafer
The thermogenetic volatilization gas of pre-add may enter in locker room 120, pollute to locker room 120, cleaning when causing to safeguard
It is difficult.
Referring to FIG. 9,112 edge of transmission mouth is provided with air injection unit 901, institute in another specific embodiment
Air injection unit 901 is stated for being connected to inert gas source, when the gate valve 111 is opened, the jet at transmission mouth 112 is formed
Gas curtain between locker room 120 and processing chamber housing 110, so that gas can not be carried out between processing chamber housing 110 and locker room 120
Body exchange, so that the gas in processing chamber housing 110 be stopped to enter in locker room 120.
Specific embodiment of the present utility model also provides a kind of multi-chamber Wafer processing apparatus, including at least two as above
State wafer processing device described in specific embodiment.Specifically, referring to FIG. 10, the multi-chamber Wafer processing apparatus packet
Multiple processing chamber housings 110 are included, each 110 side of processing chamber housing is provided with locker room 120, for storing main baffle 121 and pair
Baffle (not shown).When needing to carry out pre-add heat treatment to wafer 140 in a certain processing chamber housing 110, the processing chamber housing
Main baffle 121 in 110 corresponding locker rooms 120 is admitted in the processing chamber housing 110 by manipulator 130, is placed in spray head
Between heater；Main baffle 121 is withdrawn into the locker room 120 when end preheating process, then by the manipulator 130
It is interior.During movement main baffle 121, the manipulator 130 controls secondary baffle and is located at 121 lower section of main baffle,
It follows the main baffle 121 mobile, accepts the main baffle 121 in moving process, the impurity particle fallen avoids pollution institute
State processing chamber housing 110 and wafer 140 to be processed.
A transfer chamber 1101 is formed between each processing chamber housing 110, and transmission dress is provided in the transfer chamber 1101
1102 are set, for transmitting wafer 140 to be processed between each processing chamber housing 110.In one specific embodiment, the biography
Defeated device 1102 is transmission arm configuration.
The wafer processing device of the utility model includes one for storing the locker room of main baffle and secondary baffle, can located
During chamber is managed to wafer progress preheating, main baffle is set between the heater of processing chamber housing and spray head, is kept away
Exempt from the gas that crystal column surface volatilizees in preheating process to be attached on spray head；And during mobile main baffle, pair gear
Plate, which is located at below the main baffle, follows main baffle mobile, can accept the impurity particle fallen on main baffle.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (10)
1. a kind of wafer processing device characterized by comprising
Processing chamber housing is relatively set with spray head and heater in the processing chamber housing, and the heater is for placing wafer；
Locker room is disposed adjacent with the processing chamber housing, described for storing two baffles, respectively main baffle and secondary baffle
It is connected between locker room and the processing chamber housing by a transmission mouth, a gate valve is provided at the transmission mouth, for controlling
State the unlatching and closure of transmission mouth；
Manipulator is set in the locker room, and there are two independent tache motorices for the manipulator tool, for described in crawl respectively
Main baffle and secondary baffle, when needing to carry out pre-add heat treatment to wafer, the manipulator is used to for main baffle being moved to described
Between spray head and the heater；And in main baffle moving process, the manipulator is also used to control the secondary baffle position
Below the main baffle, the main baffle synchronizing moving is followed；When main baffle position is fixed, the manipulator is used for institute
Secondary baffle is stated to be retracted in the locker room.
2. wafer processing device according to claim 1, which is characterized in that the size of the pair baffle is greater than the main gear
The size of plate.
3. wafer processing device according to claim 1, which is characterized in that the manipulator includes that pedestal and two can stretch
Contracting mechanical arm, described scalable mechanical arm one end are connected to the base, and the other end is described scalable for grabbing the baffle
Mechanical arm is used to move baffle between locker room and processing chamber housing by stretching motion.
4. wafer processing device according to claim 1, which is characterized in that the manipulator includes pedestal and two machinery
Arm, described mechanical arm one end are connect by a shaft with the pedestal, and the other end is used for grabbing the baffle, the mechanical arm
Baffle is moved between locker room and processing chamber housing in by being rotated around the shaft.
5. wafer processing device according to claim 1, which is characterized in that the main baffle has at least one coarse table
Face, when main baffle is moved between the spray head and the heater by the manipulator, the rough surface is towards institute
State heater.
6. wafer processing device according to claim 5, which is characterized in that the rough surface include tapered protrusion layer,
At least one of matte surface and blasting treatment rear surface.
7. wafer processing device according to claim 1, which is characterized in that the transmission mouth edge is provided with jet list
Member, the air injection unit is for being connected to inert gas source, and when the gate valve is opened, the jet at transmission mouth, formation is located at
Gas curtain between locker room and processing chamber housing.
8. wafer processing device according to claim 1, which is characterized in that it is provided with vacuum line in the main baffle,
Described vacuum line one end is connected to the main baffle surface, and the other end is connected to pumping cells.
9. wafer processing device according to claim 1, which is characterized in that the spray head and the main baffle are circle
Shape, the diameter of the main baffle are greater than the diameter of the spray head.
10. a kind of multi-chamber Wafer processing apparatus, which is characterized in that including at least two such as any one of claims 1 to 9 institutes
The wafer processing device stated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821911548.1U CN208954947U (en) | 2018-11-20 | 2018-11-20 | Wafer processing device and multi-chamber Wafer processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821911548.1U CN208954947U (en) | 2018-11-20 | 2018-11-20 | Wafer processing device and multi-chamber Wafer processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208954947U true CN208954947U (en) | 2019-06-07 |
Family
ID=66744928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821911548.1U Active CN208954947U (en) | 2018-11-20 | 2018-11-20 | Wafer processing device and multi-chamber Wafer processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208954947U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111790582A (en) * | 2020-07-28 | 2020-10-20 | 苏州市鑫达试验设备有限公司 | Vertical multilayer high accuracy multi-chamber heating device |
| WO2020248326A1 (en) * | 2019-06-13 | 2020-12-17 | 上海提牛机电设备有限公司 | Air blocking device, wafer feeding apparatus, and air blocking control method |
| CN112882344A (en) * | 2019-11-29 | 2021-06-01 | 长鑫存储技术有限公司 | Wafer processing equipment |
-
2018
- 2018-11-20 CN CN201821911548.1U patent/CN208954947U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020248326A1 (en) * | 2019-06-13 | 2020-12-17 | 上海提牛机电设备有限公司 | Air blocking device, wafer feeding apparatus, and air blocking control method |
| CN112882344A (en) * | 2019-11-29 | 2021-06-01 | 长鑫存储技术有限公司 | Wafer processing equipment |
| CN111790582A (en) * | 2020-07-28 | 2020-10-20 | 苏州市鑫达试验设备有限公司 | Vertical multilayer high accuracy multi-chamber heating device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208954947U (en) | Wafer processing device and multi-chamber Wafer processing apparatus | |
| TWI531423B (en) | Treatment cup cleaning method, substrate treatment method, and substrate treatment apparatus | |
| KR101276014B1 (en) | Work-piece processing system | |
| JP5273437B2 (en) | Workpiece transfer system for ion beam implanter and processing method thereof | |
| KR101443457B1 (en) | Transfer robot | |
| US6532975B1 (en) | Substrate processing apparatus and substrate processing method | |
| KR20180029914A (en) | Substrate processing method and substrate processing apparatus | |
| TWI332932B (en) | Work-piece treatment system having load lock and buffer | |
| CN106558526B (en) | A kind of included wafer seeks the manipulator of side sensor | |
| US20010021571A1 (en) | Semiconductor wafer processing apparatus | |
| TW201802882A (en) | Substrate processing method and substrate processing apparatus | |
| CN106952858A (en) | Substrate holding and rotating apparatus, substrate board treatment and substrate processing method using same | |
| US9691640B2 (en) | Mechanisms for cleaning load ports of semiconductor process tools | |
| US10483151B2 (en) | Substrate transfer apparatus, substrate processing apparatus, and substrate processing method | |
| JP2016215306A (en) | Hanger for shot blasting and shot blasting apparatus | |
| CN105006424A (en) | Monolithic wet cleaning method | |
| US7107999B2 (en) | Substrate processing apparatus for removing organic matter by removal liquid | |
| TW201939572A (en) | Microelectronic treatment system having treatment spray with controllable beam size | |
| CN208753276U (en) | Wafer processing device and multi-chamber Wafer processing apparatus | |
| KR101947891B1 (en) | Substrate processing apparatus and gap washing method | |
| JP2013040064A (en) | Manufacturing unit for glass microparticle deposit and method of manufacturing the same | |
| CN102768977A (en) | Manipulator, atmospheric transmission unit and wafer transmission method | |
| KR100805534B1 (en) | Substrate processing apparatus and method for manufacturing a semiconductor device | |
| JP3633854B2 (en) | Semiconductor wafer processing equipment | |
| JP2010093190A (en) | Substrate processing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |