CN208954724U - High frequency antisurge radio frequency power resistor device - Google Patents

Abstract

The utility model proposes kind of a high frequency antisurge radio frequency power resistor devices, including matrix, resistive layer, metal lead wire, and the electrode film on matrix is set, the electrode film includes the face A electrode film layer, the face B electrode film layer and side electrode film layer, the upper surface of matrix is arranged in the face A electrode film layer, the lower surface of matrix is arranged in the face B electrode film layer, and side electrode film layer is arranged in matrix side and connects the face A electrode film layer and the face B electrode film layer.The utility model solves the problems, such as that I-shaped electrode resistor frequency is not high and polygonal electrodes resistor is easy to burn when input signal has surge.Polygonal electrodes structure is substituted with arc-shaped electrode structure, electrode pattern is symmetrical, uniform current density, without current convergence point and hot centrostigma；The ability for making resistor bear surge while guaranteeing resistor frequency characteristic is higher, greatly strengthens the reliability of resistor.

Description

High frequency antisurge radio frequency power resistor device

Technical field

The utility model relates to resistive element fields, particularly relate to a kind of high frequency antisurge radio frequency power resistor device.

Background technique

With the development of broadcast mechanics of communication, the requirement for resistor frequency characteristic is also higher and higher, existing radio frequency The electrode pattern of power resistor is mostly I-shaped or other polygonal electrodes being made of multiple rectangles." I " fonts electrode Since the mode that it adjusts impedance is single, so cause the resistor frequency of I-shaped electrode not high, the electrode pattern of polygon There are many adjusting impedance modes for energy, but its structure is asymmetric, causes current density uneven, and resistor body, which exists to concentrate, to generate heat Point is burnt herein when input signal exists to be easy to cause when there is surge；And polygonal electrodes have multiple right angles, and electric current is into mistake Internal current is concentrated compared with outside when right angle, and internal current density is caused excessively to concentrate, and is equally having surge when input signal exists When be easy to cause and burn herein.

Utility model content

The utility model proposes a kind of high frequency antisurge radio frequency power resistor devices, are able to solve I-shaped electrode resistor frequency The not high problem of rate and polygonal electrodes resistor have that surge is to be easy to burn in input signal.

The technical solution of the utility model is achieved in that a kind of high frequency antisurge radio frequency power resistor device, including base Body, resistive layer, metal lead wire, and the electrode film being arranged on matrix, the electrode film include the face A electrode film layer, the face B electricity The upper surface of matrix is arranged in pole film layer and side electrode film layer, the face A electrode film layer, and the face B electrode film layer is arranged under matrix Surface, side electrode film layer are arranged in matrix side and connect the face A electrode film layer and the face B electrode film layer；The resistive layer position It is overlapped on the electrode film layer of the face A and with its bond end, the surface of entire resistive layer is covered with protective film layer；The upper table of matrix Face is additionally provided with encapsulation cover plate；The face A electrode film layer includes strip-shaped membrane and T shape film two parts, and table is arranged on matrix in strip-shaped membrane The side in face, the middle position of the other side is arranged in T shape film, and the perpendicular end of T shape film is connect with metal lead wire, the outer at horizontal end For arc structure.

Preferably, the face B electrode film layer is imprinted on the lower surface of matrix and is covered whole using silk screen process Lower surface, the face A electrode film layer is in the upper surface of matrix comprising two parts of body upper surface edge placement, side is arranged in Electrode film layer connects the face A electrode film layer and the face B electrode film layer in the side of matrix.

Preferably, the metal lead wire position is welded on the T shape film of the face A electrode film layer using hot pressing Welding；Institute Matrix is stated using beryllium oxide ceramics, encapsulation cover plate is bonded in body upper surface using high temperature resistant adhesive.

Compared with the prior art, the advantages of the utility model are: a kind of new electrode pattern solves I-shaped electrode electricity Resistance device frequency not high problem and polygonal electrodes resistor are easy to burn when input signal has surge.Use circular arc The electrode structure of shape substitutes polygonal electrodes structure, and electrode pattern is symmetrical, uniform current density, collects without current convergence point and heat Midpoint；Arc-shaped electrode structure is similar to coaxial cable structure, the coaxial configuration of device can be preferably matched, so that resistance Device can reach higher frequency；The angle of circular arc is controlled under same widths can enable the arc length of circular arc add at 90 ° or less Long, overlapped that width is wider with resistor body, can preferably bear surge present in input signal；On rectangular resistance body, use Obtuse angle substitutes right angle, thus when passing the current through scattered current density, to eliminate current convergence point.Guaranteeing resistor The ability for making resistor bear surge while frequency characteristic is higher, greatly strengthens the reliability of resistor.

Detailed description of the invention

Fig. 1 is the overall structure diagram of the utility model；

Fig. 2 is the schematic diagram of internal structure that the utility model is split；

Fig. 3 is the structural schematic diagram that the utility model is further split；

Fig. 4 is the structural schematic diagram of the utility model matrix and the face A electrode film layer.

In figure: 1, matrix；2, the face B electrode film layer；3, side electrode film layer；4, the face A electrode film layer；5, resistive layer；6, Protective film layer；7, metal lead wire；8, encapsulation cover plate；41, T shape film；42, strip-shaped membrane.

Specific embodiment

The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model It clearly and completely describes, it is clear that described embodiment is only the utility model a part of the embodiment, rather than whole realities Apply example.Based on the embodiments of the present invention, those of ordinary skill in the art institute without creative efforts The every other embodiment obtained, fall within the protection scope of the utility model.

Embodiment: referring to Fig. 1, Fig. 2, Fig. 3 and Fig. 4, the utility model includes matrix 1, the face B electrode film layer 2, side electricity Pole film layer 3, the face A electrode film layer 4, resistive layer 5, protective film layer 6, metal lead wire 7, encapsulation cover plate 8.Matrix 1 uses beryllium oxide Ceramics；The face B electrode film layer 2 is imprinted on the lower surface of matrix 1 and is covered whole lower surfaces using silk screen process, the face A electrode Film layer 4 (including T shape film 41 and strip-shaped membrane 42) plays connection A in the side of matrix 1 in the upper surface of matrix 1, side electrode film layer 3 The effect of face electrode film layer 4 and the face B electrode film layer 3, resistive layer 5 be located at the upper surface of matrix 1 and with the face A electrode film layer 4 its Bond end (i.e. the perpendicular end of T shape film 41) overlap joint is good；Protective film layer 6 covers entire resistive layer 5 with protective resistance body in resistance trimming By physical injury and prevent it in use by thermal breakdown in the process；Metal lead wire 7 are welded using hot pressing Welding It is connected on the face A electrode film layer 4；Encapsulation cover plate 8 is bonded in 1 upper surface of matrix using high temperature resistant adhesive, effective protection resistance The effective part of device, it is ensured that the structural intergrity and stability of entire resistor.

The face A electrode film layer 4 includes 41 two parts of strip-shaped membrane 42 and T shape film, and strip-shaped membrane 42 is arranged in 1 upper surface of matrix Side, the middle position of the other side is arranged in T shape film 41, and the perpendicular end of T shape film 41 is connect with metal lead wire 7, T shape film 41 It is the horizontal plane being connect with perpendicular end on the inside of horizontal end, outer is arc structure.

A kind of new electrode pattern solves the problems, such as that I-shaped electrode resistor frequency is not high and polygonal electrodes resistor There are problems that surge is to be easy to burn in input signal.The electrode structure substitution arc-shaped with T shape film 41 of the face A electrode film layer 4 Polygonal electrodes structure, electrode pattern is symmetrical, uniform current density, without current convergence point and hot centrostigma；Arc-shaped electrode Structure is similar to coaxial cable structure, the coaxial configuration of device can be preferably matched, so that resistor can reach higher Frequency；The angle of circular arc is controlled under same widths can enable the arc length of circular arc lengthen at 90 ° or less, and overlapped with resistor body Width is wider, can preferably bear surge present in input signal；On rectangular resistance body, right angle is substituted with obtuse angle, from And when passing the current through scattered current density, to eliminate current convergence point.Make while guaranteeing resistor frequency characteristic The ability for obtaining resistor receiving surge is higher, greatly strengthens the reliability of resistor.

The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this Within the spirit and principle of utility model, any modification, equivalent replacement, improvement and so on should be included in the utility model Protection scope within.

Claims (3)

1. a kind of high frequency antisurge radio frequency power resistor device, including matrix, resistive layer, metal lead wire, and be arranged in matrix On electrode film, it is characterised in that: the electrode film includes the face A electrode film layer, the face B electrode film layer and side electrode film layer, the face A The upper surface of matrix is arranged in electrode film layer, and the lower surface of matrix is arranged in the face B electrode film layer, and side electrode film layer is arranged in base Body side surface simultaneously connects the face A electrode film layer and the face B electrode film layer；The resistive layer is located on the electrode film layer of the face A and takes with it End overlap joint is connect, the surface of entire resistive layer is covered with protective film layer；The upper surface of matrix is additionally provided with encapsulation cover plate；The face A Electrode film layer includes strip-shaped membrane and T shape film two parts, and the side of body upper surface is arranged in strip-shaped membrane, and T shape film is arranged another The middle position of side, and the perpendicular end of T shape film is connect with metal lead wire, the outer at horizontal end is arc structure.

2. high frequency antisurge radio frequency power resistor device according to claim 1, it is characterised in that: the face B electrode film layer The lower surface of matrix is imprinted on using silk screen process and covers whole lower surfaces, the face A electrode film layer in the upper surface of matrix, It includes two parts that body upper surface edge placement is arranged in, and side electrode film layer connects the face A electrode film in the side of matrix Layer and the face B electrode film layer.

3. high frequency antisurge radio frequency power resistor device according to claim 2, it is characterised in that: adopt the metal lead wire position It is welded on the T shape film of the face A electrode film layer with hot pressing Welding；Described matrix uses beryllium oxide ceramics, and encapsulation cover plate uses High temperature resistant adhesive is bonded in body upper surface.