CN208923201U - A kind of perovskite solar cell encapsulation structure - Google Patents
A kind of perovskite solar cell encapsulation structure Download PDFInfo
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- CN208923201U CN208923201U CN201821979458.6U CN201821979458U CN208923201U CN 208923201 U CN208923201 U CN 208923201U CN 201821979458 U CN201821979458 U CN 201821979458U CN 208923201 U CN208923201 U CN 208923201U
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- perovskite solar
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 66
- 239000011521 glass Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- 239000003292 glue Substances 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011241 protective layer Substances 0.000 claims abstract description 13
- 230000005540 biological transmission Effects 0.000 claims description 8
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 238000006748 scratching Methods 0.000 abstract description 2
- 230000002393 scratching effect Effects 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 abstract 6
- 230000000694 effects Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 229910052740 iodine Inorganic materials 0.000 description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 5
- 239000011630 iodine Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- GBMPPHPJKKUMPS-UHFFFAOYSA-N [Br].CN Chemical compound [Br].CN GBMPPHPJKKUMPS-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- RAJISUUPOAJLEQ-UHFFFAOYSA-N chloromethanamine Chemical compound NCCl RAJISUUPOAJLEQ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- YVINYOPTUQLYIZ-UHFFFAOYSA-N chloromethane methoxymethane Chemical compound CCl.COC YVINYOPTUQLYIZ-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The utility model provides a kind of perovskite solar cell encapsulation structure, glass substrate, perovskite solar cell device, glass back plate and edge seal glue including being coated with conductive layer；Perovskite solar cell device face down is arranged on the conductive layer of glass substrate；The top of perovskite solar cell device is arranged in glass back plate；Edge seal glue is arranged in glass back plate and perovskite solar cell device edge.The utility model uses primary encapsulation of the glass back plate to perovskite solar battery, on the one hand can isolate moisture and oxygen, on the other hand increases the ability of encapsulating structure antiskid, wiping, avoids scratching during using, operating battery；One layer of fine and close silicon nitride protective layer is deposited using in perovskite solar cell surface, it can play anticorrosive well, the effect that waterproof, oxygen invade, its excellent encapsulation performance of the utility model substantially increase stability of the perovskite solar battery under air environment.
Description
Technical field
The utility model belongs to solar cell package technical field, in particular to a kind of perovskite solar cell package
Structure.
Background technique
Organic/inorganic perovskite solar battery is since discovery in 2009, and photoelectric conversion efficiency is from 3.8%
Promoted by now 22% or more, improved efficiency speed be in the market various solar batteries promoted it is fastest, and
Its photoelectric conversion efficiency has been approached or more than conventional crystalline silicon, copper indium gallium selenide and cadmium telluride cells on the market.Perovskite solar energy
Another big advantage of battery is exactly that fabrication processing compares and greatly shortens simplification, and cost of manufacture with conventional crystalline silicon battery
It is greatly reduced.
Encapsulation technology has a major impact battery life in solar battery use process, existing perovskite solar energy
The disadvantages of battery is often poor to the stability of moisture, oxygen, and calcium titanium ore bed is extremely easy in decomposition failure in atmospheric environment.
Utility model content
The purpose of this utility model is to provide a kind of perovskite solar cell encapsulation structures, to solve above-mentioned existing skill
The problem of art, the maximized water and oxygen obstructed in air improve the stability of perovskite battery by encapsulation.
To achieve the above object, the technology employed by the present utility model is
A kind of perovskite solar cell encapsulation structure, glass substrate, perovskite solar-electricity including being coated with conductive layer
Pond device, glass back plate and edge seal glue；The conduction of glass substrate is arranged in perovskite solar cell device face down
On layer；The top of perovskite solar cell device is arranged in glass back plate；Glass back plate and perovskite solar cell device
Edge seal glue is arranged in edge.
Further, it is equipped with cavity between glass back plate and perovskite solar cell device, is filled with inertia in cavity
Gas.
It further, further include silicon nitride protective layer, perovskite solar cell device is arranged in silicon nitride protective layer
The back side.
Further, perovskite solar cell device includes the electron transfer layer set gradually from bottom to top, perovskite
Active layer, hole transmission layer and positive electrode.
Further, negative electrode of the conductive layer of glass substrate as perovskite solar cell device, conductive layer ITO
Transparency conducting layer.
Further, electron transfer layer is thin layer of tin oxide, with a thickness of 20-50nm.
Further, positive electricity extremely aluminium layer, silver layer or layer gold, with a thickness of 60-100nm.
It further, further include positive electrode exit, negative electrode exit；Positive electrode exit is arranged in the perovskite sun
One end of energy battery device, positive electrode exit are connect with positive electrode；Negative electrode exit is arranged in perovskite solar battery
The other end of device, negative electrode exit are connect with negative electrode.
Compared with prior art, the beneficial effects of the utility model have:
The utility model provides a kind of perovskite solar cell encapsulation structure, and the utility model is using glass back plate to calcium
The primary encapsulation of titanium ore solar battery, on the one hand can isolate moisture and oxygen, and the addition of another aspect glass back plate increases
The ability of encapsulating structure antiskid, wiping, avoid use, operation battery during the scratching phenomenon that occurs；
Further, one layer of fine and close silicon nitride protective layer, silicon nitride are deposited using in perovskite rear surface of solar cell
Protective layer has excellent chemical stability and higher hardness, can play the work anticorrosive well, waterproof, oxygen invade
With；
The utility model provides a kind of perovskite solar cell encapsulation structure, with solar energy in installation, use process
Battery it is non-breakable with damage, simple process, low in cost, good seal performance the advantages that；Using pressurization patch in a nitrogen atmosphere
Close glass back plate, to perovskite solar battery carry out first layer protection, using on perovskite battery deposited silicon nitride protect
Layer carries out second layer protection, and moisture and oxygen in air has effectively been isolated, has improved the stabilization of perovskite solar battery
Property, it has broad application prospects.
Detailed description of the invention
Fig. 1 is the cross-sectional view of perovskite solar cell encapsulation structure.
Specific embodiment
When describing the embodiments of the present invention, for the sake of clarity, specific term is used, however, this reality
Selected specific term is not intended to be limited to novel.It should be appreciated that each specific original part includes that similar method is run to realize class
Like all technically equivalent ones of purpose.
With reference to the accompanying drawing with example in detail the embodiments of the present invention.
As shown in Figure 1, the utility model provides a kind of encapsulating structure of perovskite solar battery, including to be coated with ITO saturating
The glass substrate 101 of bright conductive layer, perovskite solar cell device 102, positive electrode exit 104, negative electrode exit
103, silicon nitride protective layer 105, edge seal glue 106 and glass back plate 107.
The top for being coated with the glass substrate 101 of transparent conductive layer, calcium is arranged in perovskite solar cell device 102
102 face down of titanium ore solar cell device is close to the transparent conductive layer setting of glass substrate 101；Silicon nitride protective layer
105 are arranged in the back side of perovskite solar cell device 102, and the first layer as perovskite solar cell device 101 is anti-
Shield.
The setting of glass back plate 107 is in 105 top of silicon nitride protective layer, glass back plate 107 and perovskite solar battery device
102 edge of part is sealed using edge seal glue 106, and edge seal glue 106 is arranged in glass substrate 101 and back-panel glass
Between 107；Perovskite solar cell device 102 is encapsulated in glass substrate 101, glass back plate 107 and edge seal glue 106
In the sealing space of formation, it is equipped with cavity between glass back plate 107 and silicon nitride protective layer 105, is filled with nitrogen in cavity, makees
It is protected for the second layer of perovskite solar cell device 101.
Perovskite solar cell device 101 includes being successively set on glass substrate transparent conductive layer from bottom to top
Electron transfer layer, perovskite active layer, hole transmission layer and positive electrode；Transparent conductive layer conduct in glass substrate 101
Extremely, perovskite active layer is AX to the negative electricity of perovskite solar cell device 101nY3-n, wherein R is alkyl, and A is Pb or Sn,
X and Y is Cl, Br or I, and n is the real number of 0-3, with a thickness of 350-500nm；Hole transmission layer be and perovskite active layer material energy
The matched organic and inorganic material layer of grade, with a thickness of 100nm；Positive electricity extremely aluminium layer, silver layer or layer gold, with a thickness of 60-100nm.
A kind of perovskite solar cell encapsulation structure of the utility model, further includes positive electrode exit 104 and negative electrode
Exit 103；One end of perovskite solar cell device 102, positive electrode exit 104 is arranged in positive electrode exit 104
It is connect with the positive electrode of perovskite solar cell device 102；Negative electrode exit 103 is arranged in perovskite solar battery device
The other end of part 102, negative electrode exit 103 are connect with the negative electrode of perovskite solar cell device 102.
A kind of packaging method of perovskite solar cell encapsulation structure of the utility model, comprising the following steps:
Step 1: using and be coated with conductive layer glass substrate 101 as substrate, prepare perovskite solar cell device 102；
Wherein:
The making step of perovskite solar cell device is specific as follows in step 1:
Step 11, electron transfer layer is prepared:
It suspends in the tin oxide nanoparticles of the conductive laminated upper spin coating diameter 1-10nm of the transparent of glass substrate 101
Liquid, revolving speed 2000-5000rpm, time 30-50s；Then 180 DEG C at a temperature of anneal 30 minutes, the electron-transport of preparation
Thickness degree is in 20-50nm.
Step 12, titanium ore active layer is prepared:
Perovskite active layer can be used spin-coating method, vapour deposition process, magnetron sputtering method or roll-to-roll process and be prepared, and adopt
When being prepared with spin-coating method, comprising the following steps:
1) lead iodide is dissolved in DMF solvent with 1.3mol/mL, lead iodide-DMF solution is spin-coated on electron transfer layer
On, revolving speed 1500-2000rpm, time 40-50s obtained lead iodide-DMF film with annealing temperature 2 minutes of 75 DEG C；
2) iodine methyl ether, chloromethane amine and bromine methylamine are dissolved in isopropanol solvent with 1.3mol/mL, by iodine methyl ether-chloromethane amine-
Bromine methylamine-aqueous isopropanol is spin-coated on lead iodide-DMF film, revolving speed 1500-2000rpm, time 40-50s, environment
Humidity be 30% or so, with 150 DEG C annealing temperature 20 minutes, obtain perovskite active layer.Iodine methyl ether, chloromethane amine and bromine methylamine with
The mass ratio of 10:1:1 is dissolved in isopropanol solvent, and obtaining iodine methyl ether, chloromethane amine and bromine methylamine total mol concentration is 1.3mol/mL
Iodine methyl ether-chloromethane amine-bromine methylamine-aqueous isopropanol.
Step 13, hole transmission layer is prepared
Hole transmission layer is prepared using spin-coating method: the Spiro-OMeTAD solution mixed is spin-coated on perovskite active layer
On, revolving speed 1500-2000rpm, time 40-50s obtain the hole transmission layer of preset thickness；
Step 14, positive electrode, negative electrode are prepared:
Positive electrode is prepared using vacuum evaporation, ALD deposition, magnetron sputtering, laser deposition or roll-to-roll process.Using
Vacuum evaporation process are as follows:
The glass substrate 101 for being loaded with perovskite solar cell device 102 is fixed on mask plate, vacuum evaporation is utilized
Equipment adjusts vacuum degree to preset range and default electrode domain is deposited on perovskite active layer, just to preset evaporation rate
Thickness of electrode is controlled in 60-100nm；
Negative electrode uses after the completion of hole transmission layer preparation, and one end of perovskite solar cell device 102 is scraped,
Gold is used as negative electrode exit 103, using the transparent conductive layer of glass substrate 101 as negative electrode.
Step 2: silicon nitride protective layer 105 is prepared on perovskite solar cell device 102:
Silicon nitride protective layer 105 is carried out using in PECVD filming equipment at 102 back side of perovskite solar cell device
Preparation, technological temperature are 50-80 DEG C, deposition thickness 50-80nm.
Step 3: using in glove box nitrogen atmosphere, applying equal edge in 102 surrounding of perovskite solar cell device and seal
Glue 106 is filled, edge seal glue 106 uses epoxide resin AB component glue；Cover glass backboard 107 adds on edge seal glue 106
Overlay conjunction, static 4h.
The principles of the present invention are: using the fabulous thin layer of sin of chemical stability to perovskite solar battery into
The protection of row first layer carries out physical barrier to the intrusion of water, oxygen；Using pressurizing attaching glass back plate under nitrogen environment to perovskite
Solar battery carries out second layer protection, has further prevented the ability of perovskite solar battery barrier water, oxygen, while glass
The addition of backboard increases the ability of encapsulating structure antiskid, wiping.
Claims (8)
1. a kind of perovskite solar cell encapsulation structure, which is characterized in that including be coated with conductive layer glass substrate (101),
Perovskite solar cell device (102), glass back plate (107) and edge seal glue (106)；Perovskite solar cell device
(102) face down is arranged on the conductive layer of glass substrate (101)；Glass back plate (107) is arranged in perovskite solar-electricity
The top of pond device (102)；Glass back plate (107) and perovskite solar cell device (102) edge setting edge seal
It fills glue (106).
2. a kind of perovskite solar cell encapsulation structure according to claim 1, which is characterized in that glass back plate
(107) it is equipped with cavity between perovskite solar cell device (102), is filled with inert gas in cavity.
3. a kind of perovskite solar cell encapsulation structure according to claim 1, which is characterized in that further include silicon nitride
Protective layer (105), silicon nitride protective layer (105) are arranged at the back side of perovskite solar cell device (102).
4. a kind of perovskite solar cell encapsulation structure according to claim 1, which is characterized in that perovskite solar energy
Battery device (102) includes the electron transfer layer set gradually from bottom to top, perovskite active layer, hole transmission layer and positive electricity
Pole.
5. a kind of perovskite solar cell encapsulation structure according to claim 4, which is characterized in that glass substrate
(101) negative electrode of the conductive layer as perovskite solar cell device (102), conductive layer are transparent conductive layer.
6. a kind of perovskite solar cell encapsulation structure according to claim 4, which is characterized in that electron transfer layer is
Thin layer of tin oxide, with a thickness of 20-50nm.
7. a kind of perovskite solar cell encapsulation structure according to claim 4, which is characterized in that positive electricity extremely aluminium
Layer, silver layer or layer gold, with a thickness of 60-100nm.
8. a kind of perovskite solar cell encapsulation structure according to claim 5, which is characterized in that further include positive electrode
Exit (104), negative electrode exit (103)；Positive electrode exit (104) is arranged in perovskite solar cell device
(102) one end, positive electrode exit (104) are connect with positive electrode；Negative electrode exit (103) is arranged in perovskite solar energy
The other end of battery device (102), negative electrode exit (103) are connect with negative electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821979458.6U CN208923201U (en) | 2018-11-28 | 2018-11-28 | A kind of perovskite solar cell encapsulation structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821979458.6U CN208923201U (en) | 2018-11-28 | 2018-11-28 | A kind of perovskite solar cell encapsulation structure |
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| Publication Number | Publication Date |
|---|---|
| CN208923201U true CN208923201U (en) | 2019-05-31 |
Family
ID=66712440
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411611A (en) * | 2018-11-28 | 2019-03-01 | 中国华能集团有限公司 | A kind of perovskite solar cell encapsulation structure and packaging method |
| WO2021205336A1 (en) * | 2020-04-06 | 2021-10-14 | Elixens | Photovoltaic module and method for manufacturing such a module |
| EP4243103A4 (en) * | 2021-04-13 | 2024-06-12 | Contemporary Amperex Technology Co., Limited | Perovskite solar cell and preparation method therefor, and electrical device |
-
2018
- 2018-11-28 CN CN201821979458.6U patent/CN208923201U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411611A (en) * | 2018-11-28 | 2019-03-01 | 中国华能集团有限公司 | A kind of perovskite solar cell encapsulation structure and packaging method |
| CN109411611B (en) * | 2018-11-28 | 2024-07-02 | 中国华能集团有限公司 | Perovskite solar cell packaging structure and packaging method |
| WO2021205336A1 (en) * | 2020-04-06 | 2021-10-14 | Elixens | Photovoltaic module and method for manufacturing such a module |
| EP4243103A4 (en) * | 2021-04-13 | 2024-06-12 | Contemporary Amperex Technology Co., Limited | Perovskite solar cell and preparation method therefor, and electrical device |
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