CN208921641U - A kind of wafer detection equipment - Google Patents
A kind of wafer detection equipment Download PDFInfo
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- CN208921641U CN208921641U CN201821620774.4U CN201821620774U CN208921641U CN 208921641 U CN208921641 U CN 208921641U CN 201821620774 U CN201821620774 U CN 201821620774U CN 208921641 U CN208921641 U CN 208921641U
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- wafer
- detection equipment
- measuring sensor
- distance measuring
- workbench
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- 238000001514 detection method Methods 0.000 title claims abstract description 47
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 8
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000013519 translation Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 30
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 96
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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Abstract
The utility model provides a kind of wafer detection equipment, and the wafer detection equipment includes: workbench, and the workbench is for carrying wafer；SEM camera lens, the SEM camera lens is located at the top of the wafer, and the SEM camera lens is arranged in parallel with the wafer；Distance measuring sensor, the lower surface of the distance measuring sensor are arranged in parallel with the wafer, and the distance measuring sensor is used to detect the height between the SEM camera lens and the crystal column surface.Pass through the wafer detection equipment with distance measuring sensor, the height of crystal column surface is detected, to adjust the distance between SEM camera lens and crystal column surface, to compensate the difference in height of crystal column surface, the clarity for promoting the photo of the wafer defect of SEM camera lens shooting, the accuracy of the result to improve detection wafer defect.
Description
Technical field
The utility model belongs to semiconductor detection field, is related to a kind of wafer detection equipment.
Background technique
In the semiconductor industry, often existing defects, these wafer defects reduce the product matter of subsequent preparation to crystal column surface
Amount, therefore in the prior art, usually wafer is scanned using scanning machine, to determine the position of wafer defect, but is swept
The specific pattern and size of wafer defect can not accurately be embodied by retouching board.Therefore SEM board is mostly used greatly at present, to crystalline substance
Discount vibram outlet is trapped into capable reinspection, thus confirm the specific pattern and size of wafer defect, in order to find the root of wafer defect, thus
Shorten the time that staff searches the root of wafer defect, improves working efficiency, promote product yield.But using SEM
When board takes pictures to wafer defect, because often there is difference in height in crystal column surface, and the range of the depth of field of SEM board itself
It generally can be only adjusted in several nanometer ranges, and SEM board cannot be according to the difference in height of crystal column surface in SEM board
SEM camera lens adjusted in real time, therefore when crystal column surface has difference in height, and the depth of field of SEM board itself is not able to satisfy crystalline substance
When the demand of the difference in height of circular surfaces, the photo for often resulting in wafer defect captured by SEM board is unintelligible, is unfavorable for work
Analysis of the personnel to wafer defect.
In the prior art, to the photo of wafer defect captured by the SEM board as caused by the difference in height of crystal column surface
Unsharp problem, often through the algorithm for improving SEM board, to promote the clarity of the photo of SEM board shooting, but it is this
It is lower to obtain the accuracy of photo of wafer defect by improving SEM board algorithm, it is therefore necessary to provide a kind of from hardware
The wafer detection equipment of the clarity of the upper photo for promoting the shooting of SEM board, to improve the accurate of the wafer defect photo obtained
Degree.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of wafer detection equipment,
For solving in the prior art since the depth of field of the difference in height of crystal column surface and SEM board itself is not able to satisfy crystal column surface
Difference in height, the unsharp problem of photo of caused SEM board shooting.
In order to achieve the above objects and other related objects, the utility model provides a kind of wafer detection equipment, the wafer
Detection device includes:
Workbench, the workbench is for carrying wafer；
SEM camera lens, the SEM camera lens are located at the top of the wafer, and the SEM camera lens is parallel with the wafer sets
It sets；
Distance measuring sensor, the lower surface of the distance measuring sensor are arranged in parallel with the wafer, and the distance measuring sensor is used
Height between the detection SEM camera lens and the crystal column surface.
Optionally, the range of the difference in height of the crystal column surface includes 0.001 μm~200 μm.
Optionally, the lower surface of the lower surface of the distance measuring sensor and the SEM camera lens include positioned at a horizontal plane and
One of non-horizontal plane.
Optionally, the distance measuring sensor includes laser range sensor, infrared distance measuring sensor and ultrasonic distance measurement
One of sensor.
Optionally, during the connection type of the distance measuring sensor and the workbench includes wired connection and is wirelessly connected
It is a kind of.
Optionally, the wafer detection equipment further includes display screen, and the distance measuring sensor is connected with the display screen
It connects.
Optionally, the regulative mode of the height of the workbench includes automatic adjustment and one of manually adjusts or group
It closes.
Optionally, the method for operation of the workbench includes parallel-moving type and one of rotary or combination.
Optionally, the workbench includes one of vacuum-adsorption working table and Electrostatic Absorption workbench.
Optionally, the wafer detection equipment further includes scanning machine.
As described above, the wafer detection equipment of the utility model, has the advantages that by with distance measuring sensor
Wafer detection equipment, the height of crystal column surface is detected, to adjust the distance between SEM camera lens and crystal column surface,
To compensate the difference in height of crystal column surface, the clarity of the photo of the wafer defect of SEM camera lens shooting is promoted, it is brilliant to improve detection
The accuracy of the sunken result of discount vibram outlet.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram of the wafer detection equipment in the utility model.
Fig. 2 is shown as the workbench in the utility model and moves horizontally rear wafer detection equipment detecting crystal column surface
Structural schematic diagram.
Wafer detection equipment detects crystal column surface after the workbench vertical shift that Fig. 3 is shown as in the utility model
Structural schematic diagram.
Component label instructions
100 workbench
200 wafers
201 films
300 SEM camera lenses
400 distance measuring sensors
501 horizontal movement paths
502 vertical shift paths
D1, d2 distance
Δ H difference in height
The h depth of field
Specific embodiment
The embodiments of the present invention is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages and effect of the utility model easily.
It please refers to Fig.1 to Fig.3.It should be clear that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to
Cooperate the revealed content of specification, so that those skilled in the art understands and reads, is not intended to limit the utility model
Enforceable qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size
Adjustment, in the case where not influencing the effect of the utility model can be generated and the purpose that can reach, should all still fall in the utility model
Revealed technology contents obtain in the range of capable of covering.Meanwhile in this specification it is cited as "upper", "lower", " left side ",
The term on " right side ", " centre " and " one " etc. is merely convenient to being illustrated for narration, rather than enforceable to limit the utility model
Range, relativeness are altered or modified, under the content of no substantial changes in technology, enforceable when being also considered as the utility model
Scope.
As shown in Figure 1, the utility model provides a kind of wafer detection equipment, the wafer detection equipment includes: workbench
100, SEM camera lens 300 and distance measuring sensor 400.Wherein, the workbench 100 is used to carry wafer 200, the wafer 200
Upper surface includes film 201.The SEM camera lens 300 is located at the top of the wafer 200, and the SEM camera lens 300 with it is described
Wafer 200 is arranged in parallel.The distance measuring sensor 400 is connected with the SEM camera lens 300, and the distance measuring sensor 400
Lower surface be arranged in parallel with the wafer 200, the distance measuring sensor 400 is used to detect the height on 200 surface of wafer.
By the wafer detection equipment with the distance measuring sensor 400, the height on 200 surface of wafer can be carried out
Detection, so that the distance between the SEM camera lens 300 and described 200 surface of wafer be adjusted, avoids SEM camera lens 300 itself
When depth of field h is not able to satisfy the demand of the difference in height Δ H on 200 surface of wafer, the caused SEM camera lens 300 shooting
The unsharp problem of the photo of wafer defect promotes the SEM mirror to compensate the difference in height Δ H on 200 surface of wafer
The clarity of the photo of the wafer defect of first 300 shooting, to improve the accuracy for detecting the result of the wafer defect.
Specifically, the workbench 100 avoids the landing of wafer 200 from causing for carrying and adsorbing the wafer 200
Fragment.The range of the depth of field h of the SEM camera lens 300 includes 1nm~10nm, is shot to finely tune the SEM camera lens 300
Wafer defect clarity.It includes adjusting the SEM mirror that position between the SEM camera lens 300 and the wafer 200, which is adjusted,
One of first 300 position and the position for adjusting the workbench 100 or combination, preferably by the adjusting workbench
100 position is to be adjusted the position between the SEM camera lens 300 and the wafer 200, to be conducive to avoid to essence
The movement of the more demanding SEM camera lens 300 of accuracy reduces process complexity in order to save the cost.
Firstly, being made by the distance between the upper surface of the lower surface and the wafer 200 that adjust the SEM camera lens 300
Obtaining the SEM camera lens 300 can get clear photograph, and the distance measuring sensor 400 detects the distance measuring sensor 400 at this time
Lower surface and the distance between 200 surface of wafer d1.
As the further embodiment of the embodiment, the range of the difference in height Δ H on 200 surface of wafer includes
0.001 μm~200 μm.
Specifically, to obtain the photo of the wafer defect positioned at different location on 200 surface of wafer, it is described
It needs to generate the relative displacement in horizontal direction between 200 surface of SEM camera lens 300 and the wafer, in the present embodiment, passes through movement
The horizontal position of the workbench 100, in order to generate the SEM camera lens 300 and 200 surface of wafer in horizontal direction
Relative displacement, such as Fig. 2 illustrates the horizontal movement path 501 of the workbench 100, and the workbench 100 can carry out level
Left and right on direction is mutually moved, and according to specific needs, select the workbench 100 moves horizontally direction.Due to the wafer
There are the difference in height Δ H on 200 surfaces, therefore move when generating level between 200 surface of the SEM camera lens 300 and the wafer
After dynamic, when the SEM camera lens 300 between 200 surface of wafer in the vertical direction at a distance from the range that increases or reduces
When the adjustable range of the depth of field h beyond the SEM camera lens 300, the SEM camera lens 300 cannot be by itself the scape
The fine tuning of deep h is to compensate the difference in height Δ H on 200 surface of wafer, so that the SEM camera lens 300 cannot obtain clearly
The wafer defect photo, be unfavorable for judgement of the staff to the wafer defect.The distance measuring sensor 400 at this time
Detect the distance measuring sensor 400 lower surface and the 200 surface distance d2 of wafer.The distance measuring sensor 400 detects
To the distance d2 and the distance d1 between difference be considered as it is equal with the difference in height Δ H on 200 surface of wafer.And
Afterwards according to the difference between the distance d2 and the distance d1, adjust between 200 surface of the SEM camera lens 300 and the wafer
Vertical distance, to can compensate for the difference in height Δ H on 200 surface of wafer, so that the SEM camera lens 300 takes
The photo of the higher wafer defect of clarity.Such as Fig. 3, the vertical shift path 502 of the workbench 100 is illustrated, is led to
The height and position for moving the workbench 100 is crossed, convenient for adjusting the SEM camera lens 300 at a distance from 200 surface of wafer,
To compensate the difference in height Δ H on 200 surface of wafer, wherein the workbench 100 can carry out vertical direction as needed
On move up and down.For the scope of application for expanding the SEM camera lens 300, the difference in height Δ H's on 200 surface of wafer
Range includes 0.001 μm~200 μm, to meet in conventional semiconductor process processing procedure, the height on 200 surface of wafer
The range of poor Δ H.
As the further embodiment of the embodiment, the lower surface of the distance measuring sensor 400 and the SEM camera lens 300
Lower surface be located at one of a horizontal plane and a non-horizontal plane, the lower surface of the preferably described distance measuring sensor 400 and institute
The lower surface for stating SEM camera lens 300 is located at a horizontal plane, so that the difference between the distance that the distance measuring sensor 400 measures is i.e.
It can be converted directly into the difference in height Δ H on 200 surface of wafer, to reduce the detection of complex of the wafer detection equipment
Degree.The lower surface of the distance measuring sensor 400 and the lower surface of the SEM camera lens 300 may be alternatively located at a non-horizontal plane, herein not
It is restricted, is selected according to specific needs.
As the further embodiment of the embodiment, the distance measuring sensor 400 includes laser range sensor, infrared ray
One of distance measuring sensor and ultrasonic distance-measuring sensor, preferably structure are relatively simple and more common laser ranging passes
Sensor, the specific type of the distance measuring sensor 400 is herein with no restriction.
As the further embodiment of the embodiment, the connection type of the distance measuring sensor 400 and the workbench 100
Including one of wired connection and wireless connection.
Specifically, the connection type of the distance measuring sensor 400 and the workbench 100 is preferably wirelessly connected, with side
Toilet states the space setting of wafer detection equipment, wherein the distance measuring sensor 400 may include signal transmitting terminal, the work
Platform 100 may include signal receiving end, thus the SEM camera lens 300 that can will test of the distance measuring sensor 400 with it is described
The numerical information of the height d1 and d2 between 200 surface of wafer is fed directly to the workbench 100, and passes through the number
Value information directly automatically adjusts to the height of the workbench 100, to compensate the difference in height on 200 surface of wafer
Δ H, to improve the accuracy for adjusting the height of the workbench 100.
As the further embodiment of the embodiment, the regulative mode of the height of the workbench 100 includes automatic adjustment
And it one of manually adjusts or combination.
Specifically, the distance measuring sensor 400 can also be connected with display screen (not shown), in order to sense the ranging
The specific value for the distance d1 and d2 that device 400 detects feeds back to staff, and staff is according to the letter of the numerical value
Breath, can be adjusted the height of the workbench 100, including manually adjust.The adjusting side of the height of the workbench 100
Formula preferably comprises the distance measuring sensor 400 to the automatic adjustment of the workbench 100 and staff according to being connected to
What the display screen of the distance measuring sensor 400 was carried out manually adjusts, thus the adjusting of the height to the workbench 100
Alternate ways are provided.
As the further embodiment of the embodiment, the method for operation of the workbench 100 includes parallel-moving type and rotary
One of or combination.
Specifically, the workbench 100 includes one of vacuum-adsorption working table and Electrostatic Absorption workbench, to increase
Adsorption capacity between the strong workbench 100 and the wafer 200 avoids the landing of wafer 200 from leading to fragment.When described
When workbench 100 is using vacuum-adsorption working table, the upper surface of the workbench 100 can with several equally distributed stomatas or
Air drain adsorbs the wafer 200 by equally distributed stomata or air drain.For the readily available 200 surface difference position of wafer
The photo of the wafer defect at place is set, the method for operation of the workbench 100 includes upper-lower height translation, horizontal left and right translation
And the rotation that rotating range is 360 °, to improve the mobile efficiency of the workbench 100.
As the further embodiment of the embodiment, the wafer detection equipment further includes scanning machine (not shown).Institute
Wafer detection equipment is stated when detecting 200 surface of wafer, 200 surface of wafer can be carried out by the scanning machine
Preliminary judgement then again carries out the wafer defect by the effect of the distance measuring sensor 400 and the SEM camera lens 300
It takes pictures, the photo of the higher wafer defect of clarity is obtained, in order to analyze the specific pattern and ruler of the wafer defect
It is very little, to improve the efficiency of the wafer detection equipment.
In conclusion the wafer detection equipment of the utility model carries out the height of crystal column surface by distance measuring sensor
Detection, to compensate the difference in height of crystal column surface, promotes SEM camera lens and claps to adjust the distance between SEM camera lens and crystal column surface
The clarity of the photo for the wafer defect taken the photograph, the accuracy of the result to improve detection wafer defect.So the utility model
It effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (10)
1. a kind of wafer detection equipment, which is characterized in that the wafer detection equipment includes:
Workbench, the workbench is for carrying wafer；
SEM camera lens, the SEM camera lens is located at the top of the wafer, and the SEM camera lens is arranged in parallel with the wafer；
Distance measuring sensor, the lower surface of the distance measuring sensor are arranged in parallel with the wafer, and the distance measuring sensor is for examining
Survey the height between the SEM camera lens and the crystal column surface.
2. wafer detection equipment according to claim 1, it is characterised in that: the range packet of the difference in height of the crystal column surface
Include 0.001 μm~200 μm.
3. wafer detection equipment according to claim 1, it is characterised in that: the lower surface of the distance measuring sensor with it is described
The lower surface of SEM camera lens includes being located at one of a horizontal plane and a non-horizontal plane.
4. wafer detection equipment according to claim 1, it is characterised in that: the distance measuring sensor includes that laser ranging passes
One of sensor, infrared distance measuring sensor and ultrasonic distance-measuring sensor.
5. wafer detection equipment according to claim 1, it is characterised in that: the distance measuring sensor and the workbench
Connection type includes one of wired connection and wireless connection.
6. wafer detection equipment according to claim 1, it is characterised in that: the wafer detection equipment further includes display
Screen, and the distance measuring sensor is connected with the display screen.
7. wafer detection equipment according to claim 1, it is characterised in that: the regulative mode packet of the height of the workbench
It includes and one of automatically adjusts and manually adjust or combine.
8. wafer detection equipment according to claim 1, it is characterised in that: the method for operation of the workbench includes translation
And rotation one of or combination.
9. wafer detection equipment according to claim 1, it is characterised in that: the workbench includes vacuum-adsorption working table
And one of Electrostatic Absorption workbench.
10. wafer detection equipment according to claim 1, it is characterised in that: the wafer detection equipment further includes scanning
Board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821620774.4U CN208921641U (en) | 2018-09-30 | 2018-09-30 | A kind of wafer detection equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821620774.4U CN208921641U (en) | 2018-09-30 | 2018-09-30 | A kind of wafer detection equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208921641U true CN208921641U (en) | 2019-05-31 |
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ID=66708300
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821620774.4U Expired - Fee Related CN208921641U (en) | 2018-09-30 | 2018-09-30 | A kind of wafer detection equipment |
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| Country | Link |
|---|---|
| CN (1) | CN208921641U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112595729A (en) * | 2021-03-03 | 2021-04-02 | 惠州高视科技有限公司 | Mini-LED wafer rapid detection system and method |
-
2018
- 2018-09-30 CN CN201821620774.4U patent/CN208921641U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112595729A (en) * | 2021-03-03 | 2021-04-02 | 惠州高视科技有限公司 | Mini-LED wafer rapid detection system and method |
| CN112595729B (en) * | 2021-03-03 | 2021-06-04 | 惠州高视科技有限公司 | Mini-LED wafer rapid detection system and method |
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Granted publication date: 20190531 |