CN208904040U

CN208904040U - A kind of hyperfrequency photon detector based on light thermoelectric conversion effect

Info

Publication number: CN208904040U
Application number: CN201821509389.2U
Authority: CN
Inventors: 宋欢; 邢通; 李燕飞; 陈会萍
Original assignee: Individual
Current assignee: Individual
Priority date: 2018-09-16
Filing date: 2018-09-16
Publication date: 2019-05-24
Anticipated expiration: 2028-09-16

Abstract

The utility model discloses a kind of hyperfrequency photon detector based on light thermoelectric conversion effect, belong to nano electron device technical field, including the left Pd electrode of lock-in amplifier, h-BN photic zone, InSe film, InSe film, P doping Si substrate DC power supply VL, P adulterate Si substrate Pd electrode, graphite shielding layer DC power supply VR, graphite shielding layer Pd electrode, graphite shielding layer, h-BN substrate, SiO₂Oxide layer, P adulterate Si substrate, the right Pd electrode of InSe film, and detector has many advantages, such as that dark current is small, precision is high, strong interference immunity.In actual detection, using device unsymmetric structure and the thermoelectricity capability of InSe film, under tested light-wave irradiation, applies different voltage by adulterating Si substrate in graphite shielding layer and P, can get different thermoelectric forces, and then test out photon energy and wavelength.

Description

A kind of hyperfrequency photon detector based on light thermoelectric conversion effect

Technical field

It is the utility model relates to nano electron device technical field, in particular to a kind of super based on light thermoelectric conversion effect High frequency photon detector.

Background technique

In recent years, the rapid development in Terahertz (1012Hz) wave radiation source opens extremely wide for Terahertz application Application prospect, while more stringent requirements are proposed to the performance of terahertz wave detector part, and THz wave Detection Techniques are ground Study carefully and has become one of most active research field in recent years.Low transmitting power and relatively high heat back due to THZ source The interference of the coupling of scape needs highly sensitive detection means.Currently, most common means are the direct detection sides of heat absorption Method, superconduction frequency mixing technique and thermoelectron radiotechnology, but three of the above technological approaches can only measure the intensity of radiation, Bu Nengti For more accurate frequency and phase information, and its sensitivity is limited by background radiation, thus to Terahertz light wave when Direct and continuous measurement within the scope of domain has become difficult point urgently to be resolved at present.Indium selenide is a kind of III-VI compounds of group, tool There is different chemical structures, wherein that most study is InSe and In₂Se₃.InSe is in photoelectric conversion, photocatalysis, heat to electricity conversion etc. Aspect has excellent physical characteristic.For this purpose, the present invention uses Si, SiO₂, InSe, h-BN and graphite composite construction realize Accurate detection to hyperfrequency photon.

Summary of the invention

The technical problems to be solved in the utility model is to overcome shortcoming in the prior art, provides a kind of sensitivity Height, high resolution, test scope be wide, simple process hyperfrequency photon detector, for testing the physics such as THz photon wavelength spy Property.

A kind of hyperfrequency light wave detector based on light thermoelectric conversion effect described in the utility model includes locking phase amplification The left Pd electrode of device, h-BN photic zone, InSe film, InSe film, P doping Si substrate DC power supply VL, P doping Si substrate Pd electricity Pole, graphite shielding layer DC power supply VR, graphite shielding layer Pd electrode, graphite shielding layer, h-BN substrate, SiO₂Oxide layer, P doping The right Pd electrode of Si substrate, InSe film is first 2 × 10 in doping concentration¹⁶cm^-3It is two-sided with a thickness of the p-type of 200-240nm The SiO with a thickness of 100-200nm is prepared on height polishing single crystal silicon substrate by thermal oxidation method₂Oxide layer utilizes PMMA (poly- methyl Methyl acrylate) transfer method will be placed in SiO with a thickness of the graphite shielding layer of 10nm thickness₂Layer surface is aoxidized, then will be using change It learns vapour deposition process preparation and SiO is transferred to by PMMA method with a thickness of the h-BN film of 30nm₂Oxide layer and graphite shielding layer Surface as h-BN substrate, the upper table of h-BN substrate then will be transferred to by PMMA method with a thickness of the InSe film of 5nm Face is transferred to InSe film upper surface as h-BN photic zone by PMMA method for a thickness of the h-BN film of 20nm, above Each transfer step is required through the process of acetone solution, reductive heat treatment, oxidizing thermal treatment to remove in transfer process PMMA residue prepares the Pd electrode with a thickness of 100nm using electron beam evaporation method.

Further, as a specific structural form, the Pd electrode is deposited respectively by electron beam evaporation method In the side of InSe film upper surface, graphite shielding layer side and P doping Si substrate, wherein in InSe film upper surface, respectively Symmetrical two Pd electrodes are deposited, deposition thickness 100nm is left by external lock-in amplifier, InSe film by conducting wire The right Pd electrode of Pd electrode, InSe film, graphite shielding layer DC power supply VR, graphite shielding layer Pd electrode, P adulterate Si substrate direct current Power supply VL connection, can measure under different hyperfrequency light-wave irradiations, two interelectrode voltage differences of InSe film, and then obtain light wave Wavelength.

Further, as a specific structural form, the graphite shielding layer uses mechanical stripping method from Gao Ding It is obtained into pyrolytic graphite, with a thickness of 10nm, length 40nm, width is the rectangular film of 30nm, and graphite shielding layer is clipped in H-BN substrate and SiO₂Play the role of shielding electric field between oxide layer.

Further, as a specific structural form, the h-BN film is using chemical vapour deposition technique system Standby, h-BN photic zone has the rectangular film structure that with a thickness of 20nm and length is 50nm, width is 30nm, the length of h-BN substrate Degree is that its bottom of right side is reserved rectangular notch during the preparation process and be used to place by 80nm, width 40nm with a thickness of 10nm Graphite shielding layer.

Further, the lock-in amplifier use 30MHz high-frequency digital lock-in amplifier, sensitivity 1nV to 1V, when Between constant be 3us to 3Ks.

Detection principle: according to Seebeck effect, keep the temperature difference that will generate electromotive force at semiconductor both ends, this detector uses Tested hyperfrequency light wave is passed through h-BN photic zone using the preferable pyroelecthc properties of InSe film by asymmetrical device architecture It is radiated at InSe film upper surface, so that its both ends is generated the temperature difference, then adulterate Si by adjusting graphite shielding layer DC power supply VR and P The voltage volt value of substrate DC power supply VL makes InSe film left-half have different electron mobilities from right half part, in turn By the thermoelectromotive force signal of acquisition InSe film both ends response, optical wavelength and energy information are obtained.

Below with attached drawing, the present invention is further illustrated, but the embodiment in attached drawing is not constituted to the present invention Any restrictions.

Fig. 1 is a kind of main view signal of hyperfrequency photon detector based on light thermoelectric conversion effect of the utility model Figure；

Fig. 2 is a kind of vertical view signal of hyperfrequency photon detector based on light thermoelectric conversion effect of the utility model Figure；

Fig. 3 is a kind of left view signal of hyperfrequency photon detector based on light thermoelectric conversion effect of the utility model Figure；

Fig. 4 is a kind of thermoelectromotive force of hyperfrequency photon detector based on light thermoelectric conversion effect of the utility model With electron mobility relational graph in InSe film；

Fig. 5 be the utility model a kind of hyperfrequency photon detector based on light thermoelectric conversion effect photon energy with The relational graph of thermoelectromotive force.

Specific embodiment

In order to make the content of the utility model be easier to be clearly understood, below according to specific embodiment and combine attached Figure, is described in further details the utility model.Obviously, the embodiments are a part of the embodiments of the present invention, Rather than whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creativeness Every other embodiment obtained, fall within the protection scope of the utility model under the premise of labour.

As shown in Fig. 1 ~ 5, a kind of hyperfrequency photon detector based on light thermoelectric conversion effect, which includes locking phase The left Pd electrode (3) of amplifier (1), h-BN photic zone (2), InSe film, InSe film (4), P adulterate Si substrate DC power supply VL (5), P adulterate Si substrate Pd electrode (6), graphite shielding layer DC power supply VR(7), graphite shielding layer Pd electrode (8), graphite shielding Layer (9), h-BN substrate (10), SiO₂Oxide layer (11), P adulterate Si substrate (12), the right Pd electrode (13) of InSe film, exist first Doping concentration is 2 × 10¹⁶cm^-3The two-sided high polishing single crystal silicon substrate of the p-type with a thickness of 200-240nm on pass through thermal oxidation method Prepare the SiO with a thickness of 100-200nm₂Oxide layer, will be with a thickness of 10nm using PMMA (polymethyl methacrylate) transfer method The graphite shielding layer of thickness is placed in SiO₂Layer surface is aoxidized, then chemical vapour deposition technique will be used to prepare the h- with a thickness of 30nm BN film is transferred to SiO by PMMA method₂It the surface of oxide layer and graphite shielding layer, then will be with a thickness of as h-BN substrate The InSe film of 5nm is transferred to the upper surface of h-BN substrate by PMMA method, will pass through with a thickness of the h-BN film of 20nm PMMA method is transferred to InSe film upper surface as h-BN photic zone, and above each transfer step requires molten by acetone Solution, reductive heat treatment, oxidizing thermal treatment process to remove the PMMA residue in transfer process, using electron beam evaporation legal system The standby Pd electrode with a thickness of 100nm.

Fig. 4 show electron mobility relational graph in InSe thin-film electromotive force and InSe film, is arranged in an experiment VR=15uV, VL=25uV are thin with left InSe at interface using the left side of graphite linings as interface due to the screen effect of graphite linings Film has lower electron mobility n (x), and significantly raised with right electron mobility n (x) at interface, thermoelectromotive force then exists Reach maximum value on the left of InSe film, reaches minimum value on right side.

Fig. 5 show the relational graph of photon energy and thermoelectromotive force, the thermoelectric that photon energy and InSe film generate Kinetic potential approximation proportional, with the raising of photon energy, thermoelectromotive force is gradually risen.

In conclusion the utility model provides a kind of tool of hyperfrequency photon detector based on light thermoelectric conversion effect Body structure and connection type have many advantages, such as that dark current is small, precision is high, strong interference immunity.It is non-using device in actual detection The thermoelectricity capability of symmetrical structure and InSe film is applied under tested light-wave irradiation by adulterating Si substrate in graphite shielding layer and P Add different voltage, can get different thermoelectric forces, and then tests out photon energy and wavelength.

Claims

1. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect, characterized by comprising: lock-in amplifier (1), The left Pd electrode (3) of h-BN photic zone (2), InSe film, InSe film (4), P doping Si substrate DC power supply VL (5), P doping Si substrate Pd electrode (6), graphite shielding layer DC power supply VR (7), graphite shielding layer Pd electrode (8), graphite shielding layer (9), h- BN substrate (10), SiO₂Oxide layer (11), P adulterate Si substrate (12), the right Pd electrode (13) of InSe film, are 2 in doping concentration ×10¹⁶cm^-3The two-sided high polishing single crystal silicon substrate of the p-type with a thickness of 200-240nm on preparation with a thickness of 100-200nm SiO₂ Oxide layer will be placed in SiO with a thickness of the graphite shielding layer of 10nm thickness₂Layer surface is aoxidized, then will be with a thickness of the h-BN of 30nm Film is transferred to SiO₂It the surface of oxide layer and graphite shielding layer, then will be with a thickness of the InSe film of 5nm as h-BN substrate It is transferred to the upper surface of h-BN substrate, is transferred to InSe film upper surface as h-BN light transmission for a thickness of the h-BN film of 20nm Layer.

2. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect according to claim 1, it is characterised in that The Pd electrode is respectively deposited at the side of InSe film upper surface, graphite shielding layer side and P doping Si substrate, wherein InSe film upper surface, deposits symmetrical two Pd electrodes respectively, deposition thickness 100nm, by conducting wire by outer lock The left Pd electrode (3) of phase amplifier (1), InSe film, the right Pd electrode (13) of InSe film, graphite shielding layer DC power supply VR (7), Graphite shielding layer Pd electrode (8), P doping Si substrate DC power supply VL (5) connection, can measure under different hyperfrequency light-wave irradiations, (4) two interelectrode voltage differences of InSe film, and then obtain optical wavelength.

3. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect according to claim 1, it is characterised in that For the graphite shielding layer with a thickness of 10nm, length is less than 40nm, and width is less than the rectangular film of 30nm, and graphite shielding layer is clipped in H-BN substrate and SiO₂Play the role of shielding electric field between oxide layer.

4. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect according to claim 1, it is characterised in that The h-BN photic zone has the rectangular film structure that with a thickness of 20nm and length is 50nm, width is 30nm, h-BN substrate Length be 80nm, width 40nm, with a thickness of 10nm, bottom of right side reserves rectangular notch for placing graphite shielding layer.

5. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect according to claim 1, it is characterised in that The lock-in amplifier uses 30MHz high-frequency digital lock-in amplifier, sensitivity 1nV to 1V, and time constant is 3us to 3Ks.