CN109119506A - A kind of hyperfrequency photon detector based on light thermoelectric conversion effect - Google Patents
A kind of hyperfrequency photon detector based on light thermoelectric conversion effect Download PDFInfo
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- CN109119506A CN109119506A CN201811077931.6A CN201811077931A CN109119506A CN 109119506 A CN109119506 A CN 109119506A CN 201811077931 A CN201811077931 A CN 201811077931A CN 109119506 A CN109119506 A CN 109119506A
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- 230000000694 effects Effects 0.000 title claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 37
- 239000010439 graphite Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 30
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 15
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 3
- 238000007669 thermal treatment Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000012360 testing method Methods 0.000 abstract description 4
- 230000036039 immunity Effects 0.000 abstract description 2
- 230000005619 thermoelectricity Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 32
- 230000037230 mobility Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The present invention discloses a kind of hyperfrequency photon detector based on light thermoelectric conversion effect, belong to nano electron device technical field, including the left Pd electrode of lock-in amplifier, h-BN photic zone, InSe film, InSe film, P doping Si substrate DC power supply VL, P adulterate Si substrate Pd electrode, graphite shielding layer DC power supply VR, graphite shielding layer Pd electrode, graphite shielding layer, h-BN substrate, SiO2Oxide layer, P adulterate Si substrate, the right Pd electrode of InSe film, and detector has many advantages, such as that dark current is small, precision is high, strong interference immunity.In actual detection, using device unsymmetric structure and the thermoelectricity capability of InSe film, under tested light-wave irradiation, applies different voltage by adulterating Si substrate in graphite shielding layer and P, can get different thermoelectric forces, and then test out photon energy and wavelength.
Description
Technical field
The present invention relates to nano electron device technical field, in particular to a kind of hyperfrequency based on light thermoelectric conversion effect
Photon detector.
Background technique
In recent years, the rapid development in Terahertz (1012Hz) wave radiation source opens extremely wide for Terahertz application
Application prospect, while more stringent requirements are proposed to the performance of terahertz wave detector part, and THz wave Detection Techniques are ground
Study carefully and has become most active research neck in recent years
One of domain.Due to the interference of the coupling of the low transmitting power and relatively high hot background of THZ source, high sensitivity is needed
Detection means.Currently, most common means are direct detection method, superconduction frequency mixing technique and the thermoelectron radiation of heat absorption
Technology, but three of the above technological approaches can only measure the intensity of radiation, cannot provide more accurate frequency and phase information, and
Its sensitivity is limited by background radiation, so having become to direct and continuous measurement of the Terahertz light wave in time domain scale
Difficult point urgently to be resolved at present.Indium selenide is a kind of III-VI compounds of group, has different chemical structures, wherein most study
Be InSe and In2Se3.InSe photoelectric conversion, photocatalysis, in terms of have excellent physical characteristic.For this purpose,
The present invention uses Si, SiO2, InSe, h-BN and graphite composite construction realize the accurate detection to hyperfrequency photon.
Summary of the invention
The technical problem to be solved by the present invention is to overcome shortcoming in the prior art, provide a kind of high sensitivity, point
Resolution is high, test scope is wide, simple process hyperfrequency photon detector, for testing the physical characteristics such as THz photon wavelength.
A kind of hyperfrequency light wave detector based on light thermoelectric conversion effect of the present invention includes lock-in amplifier, h-
The left Pd electrode of BN photic zone, InSe film, InSe film, P doping Si substrate DC power supply VL, P adulterate Si substrate Pd electrode, stone
Black shielded layer DC power supply VR, graphite shielding layer Pd electrode, graphite shielding layer, h-BN substrate, SiO2Oxide layer, P adulterate Si base
Bottom, the right Pd electrode of InSe film are first 2 × 10 in doping concentration16cm-3The p-type with a thickness of 200-240nm two-sided high throw
The SiO with a thickness of 100-200nm is prepared by thermal oxidation method on light single crystal silicon substrate2Oxide layer utilizes PMMA (polymethyl
Sour methyl esters) transfer method will be placed in SiO with a thickness of the graphite shielding layer of 10nm thickness2Layer surface is aoxidized, then will be using chemical gas
The preparation of phase sedimentation is transferred to SiO by PMMA method with a thickness of the h-BN film of 30nm2The table of oxide layer and graphite shielding layer
Then face will be transferred to the upper surface of h-BN substrate as h-BN substrate with a thickness of the InSe film of 5nm by PMMA method, will
InSe film upper surface is transferred to as h-BN photic zone by PMMA method with a thickness of the h-BN film of 20nm, it is above to turn every time
Walk requires residual to remove the PMMA in transfer process by the process of acetone solution, reductive heat treatment, oxidizing thermal treatment suddenly
Object is stayed, the Pd electrode with a thickness of 100nm is prepared using electron beam evaporation method.
Further, as a specific structural form, the Pd electrode is deposited respectively by electron beam evaporation method
In the side of InSe film upper surface, graphite shielding layer side and P doping Si substrate, wherein in InSe film upper surface, respectively
Symmetrical two Pd electrodes are deposited, deposition thickness 100nm is left by external lock-in amplifier, InSe film by conducting wire
The right Pd electrode of Pd electrode, InSe film, graphite shielding layer DC power supply VR, graphite shielding layer Pd electrode, P adulterate Si substrate direct current
Power supply VL connection, can measure under different hyperfrequency light-wave irradiations, two interelectrode voltage differences of InSe film, and then obtain light wave
Wavelength.
Further, as a specific structural form, the graphite shielding layer uses mechanical stripping method from Gao Ding
It is obtained into pyrolytic graphite, with a thickness of 10nm, length 40nm, width is the rectangular film of 30nm, and graphite shielding layer is clipped in
H-BN substrate and SiO2Play the role of shielding electric field between oxide layer.
Further, as a specific structural form, the h-BN film is using chemical vapour deposition technique system
Standby, h-BN photic zone has the rectangular film structure that with a thickness of 20nm and length is 50nm, width is 30nm, the length of h-BN substrate
Degree is that its bottom of right side is reserved rectangular notch during the preparation process and be used to place by 80nm, width 40nm with a thickness of 10nm
Graphite shielding layer.
Further, the lock-in amplifier use 30MHz high-frequency digital lock-in amplifier, sensitivity 1nV to 1V, when
Between constant be 3us to 3Ks.
Detection principle: according to Seebeck effect, keep the temperature difference that will generate electromotive force at semiconductor both ends, this detector uses
Tested hyperfrequency light wave is passed through h-BN photic zone using the preferable pyroelecthc properties of InSe film by asymmetrical device architecture
It is radiated at InSe film upper surface, so that its both ends is generated the temperature difference, then adulterate Si by adjusting graphite shielding layer DC power supply VR and P
The voltage volt value of substrate DC power supply VL makes InSe film left-half have different electron mobilities from right half part, in turn
By the thermoelectromotive force signal of acquisition InSe film both ends response, optical wavelength and energy information are obtained.
Below with attached drawing, the present invention is further illustrated, but the embodiment in attached drawing is not constituted to the present invention
Any restrictions.
Fig. 1 is a kind of schematic front view of hyperfrequency photon detector based on light thermoelectric conversion effect of the invention；
Fig. 2 is a kind of schematic top plan view of hyperfrequency photon detector based on light thermoelectric conversion effect of the invention；
Fig. 3 is a kind of left view schematic diagram of hyperfrequency photon detector based on light thermoelectric conversion effect of the invention；
Fig. 4 is thin for the thermoelectromotive force and InSe of a kind of hyperfrequency photon detector based on light thermoelectric conversion effect of the invention
Electron mobility relational graph in film；
Fig. 5 is electronic for the photon energy and the temperature difference of a kind of hyperfrequency photon detector based on light thermoelectric conversion effect of the invention
The relational graph of gesture.
Specific embodiment
In order that the present invention can be more clearly and readily understood, right below according to specific embodiment and in conjunction with attached drawing
The present invention is described in further details.Obviously, described embodiments are some of the embodiments of the present invention, rather than all implements
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
Every other embodiment, shall fall within the protection scope of the present invention.
As shown in Fig. 1 ~ 5, a kind of hyperfrequency photon detector based on light thermoelectric conversion effect, which includes locking phase
The left Pd electrode (3) of amplifier (1), h-BN photic zone (2), InSe film, InSe film (4), P adulterate Si substrate DC power supply VL
(5), P adulterate Si substrate Pd electrode (6), graphite shielding layer DC power supply VR(7), graphite shielding layer Pd electrode (8), graphite shielding
Layer (9), h-BN substrate (10), SiO2Oxide layer (11), P adulterate Si substrate (12), the right Pd electrode (13) of InSe film, exist first
Doping concentration is 2 × 1016cm-3The two-sided high polishing single crystal silicon substrate of the p-type with a thickness of 200-240nm on pass through thermal oxidation method
Prepare the SiO with a thickness of 100-200nm2Oxide layer, will be with a thickness of 10nm using PMMA (polymethyl methacrylate) transfer method
The graphite shielding layer of thickness is placed in SiO2Layer surface is aoxidized, then chemical vapour deposition technique will be used to prepare the h- with a thickness of 30nm
BN film is transferred to SiO by PMMA method2It the surface of oxide layer and graphite shielding layer, then will be with a thickness of as h-BN substrate
The InSe film of 5nm is transferred to the upper surface of h-BN substrate by PMMA method, will pass through with a thickness of the h-BN film of 20nm
PMMA method is transferred to InSe film upper surface as h-BN photic zone, and above each transfer step requires molten by acetone
Solution, reductive heat treatment, oxidizing thermal treatment process to remove the PMMA residue in transfer process, using electron beam evaporation legal system
The standby Pd electrode with a thickness of 100nm.
Fig. 4 show electron mobility relational graph in InSe thin-film electromotive force and InSe film, is arranged in an experiment
VR=15uV, VL=25uV are thin with left InSe at interface using the left side of graphite linings as interface due to the screen effect of graphite linings
Film has lower electron mobility n (x), and significantly raised with right electron mobility n (x) at interface, thermoelectromotive force then exists
Reach maximum value on the left of InSe film, reaches minimum value on right side.
Fig. 5 show the relational graph of photon energy and thermoelectromotive force, the thermoelectric that photon energy and InSe film generate
Kinetic potential approximation proportional, with the raising of photon energy, thermoelectromotive force is gradually risen.
In conclusion the present invention provides a kind of specific knots of hyperfrequency photon detector based on light thermoelectric conversion effect
Structure and connection type have many advantages, such as that dark current is small, precision is high, strong interference immunity.It is asymmetric using device in actual detection
The thermoelectricity capability of structure and InSe film is applied not under tested light-wave irradiation by adulterating Si substrate in graphite shielding layer and P
Same voltage, can get different thermoelectric forces, and then test out photon energy and wavelength.
Claims (5)
1. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect, characterized by comprising: including lock-in amplifier
(1), the left Pd electrode (3) of h-BN photic zone (2), InSe film, InSe film (4), P adulterate Si substrate DC power supply VL(5), P
Adulterate Si substrate Pd electrode (6), graphite shielding layer DC power supply VR(7), graphite shielding layer Pd electrode (8), graphite shielding layer
(9), h-BN substrate (10), SiO2Oxide layer (11), P adulterate Si substrate (12), the right Pd electrode (13) of InSe film, are mixing first
Miscellaneous concentration is 2 × 1016cm-3The two-sided high polishing single crystal silicon substrate of the p-type with a thickness of 200-240nm on pass through thermal oxide legal system
The standby SiO with a thickness of 100-200nm2Oxide layer, will be with a thickness of 10nm thickness using PMMA (polymethyl methacrylate) transfer method
The graphite shielding layer of degree is placed in SiO2Layer surface is aoxidized, then chemical vapour deposition technique will be used to prepare the h-BN with a thickness of 30nm
Film is transferred to SiO by PMMA method2It the surface of oxide layer and graphite shielding layer, then will be with a thickness of as h-BN substrate
The InSe film of 5nm is transferred to the upper surface of h-BN substrate by PMMA method, will pass through with a thickness of the h-BN film of 20nm
PMMA method is transferred to InSe film upper surface as h-BN photic zone, and above each transfer step requires molten by acetone
Solution, reductive heat treatment, oxidizing thermal treatment process to remove the PMMA residue in transfer process, using electron beam evaporation legal system
The standby Pd electrode with a thickness of 100nm.
2. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect according to claim 1, it is characterised in that
The Pd electrode is respectively deposited at InSe film upper surface, graphite shielding layer side and P by electron beam evaporation method and adulterates Si
The side of substrate deposits symmetrical two Pd electrodes wherein in InSe film upper surface respectively, deposition thickness 100nm,
By conducting wire by external lock-in amplifier (1), the left Pd electrode (3) of InSe film, the right Pd electrode (13) of InSe film, graphite shielding
Layer DC power supply VR(7), graphite shielding layer Pd electrode (8), P adulterate Si substrate DC power supply VL(5) connection, can measure different super
Under high frequency light-wave irradiation, (4) two interelectrode voltage differences of InSe film, and then obtain optical wavelength.
3. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect according to claim 1, it is characterised in that
The graphite shielding layer is obtained from highly oriented pyrolytic graphite using mechanical stripping method, and with a thickness of 10nm, length is less than
40nm, width are less than the rectangular film of 30nm, and graphite shielding layer is clipped in h-BN substrate and SiO2Shielding electricity is played between oxide layer
The effect of field.
4. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect according to claim 1, it is characterised in that
The h-BN film is to be prepared using chemical vapour deposition technique, h-BN photic zone have with a thickness of 20nm and length be 50nm,
Width is the rectangular film structure of 30nm, and the length of h-BN substrate is that 80nm, width 40nm were being prepared with a thickness of 10nm
Its bottom of right side is reserved into rectangular notch in journey and is used to place graphite shielding layer.
5. a kind of hyperfrequency photon detector based on light thermoelectric conversion effect according to claim 1, it is characterised in that
The lock-in amplifier uses 30MHz high-frequency digital lock-in amplifier, sensitivity 1nV to 1V, and time constant is 3us to 3Ks.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811077931.6A CN109119506A (en) | 2018-09-16 | 2018-09-16 | A kind of hyperfrequency photon detector based on light thermoelectric conversion effect |
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| CN201811077931.6A CN109119506A (en) | 2018-09-16 | 2018-09-16 | A kind of hyperfrequency photon detector based on light thermoelectric conversion effect |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364581A (en) * | 2019-06-06 | 2019-10-22 | 浙江大学 | The conductivity type photodetector structure of asymmetrical beam up and down based on field-effect |
| CN110514307A (en) * | 2019-08-30 | 2019-11-29 | 金华伏安光电科技有限公司 | Infrared detector and system based on two-dimensional material photo-thermal electrical effect |
| CN112309440A (en) * | 2020-10-21 | 2021-02-02 | 西北工业大学 | Optical storage device based on platinum-two-dimensional indium selenide-few-layer graphite Schottky diode and storage method |
-
2018
- 2018-09-16 CN CN201811077931.6A patent/CN109119506A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364581A (en) * | 2019-06-06 | 2019-10-22 | 浙江大学 | The conductivity type photodetector structure of asymmetrical beam up and down based on field-effect |
| CN110364581B (en) * | 2019-06-06 | 2021-03-26 | 浙江大学 | Up-down asymmetric photoconductive type photoelectric detector structure based on field effect |
| CN110514307A (en) * | 2019-08-30 | 2019-11-29 | 金华伏安光电科技有限公司 | Infrared detector and system based on two-dimensional material photo-thermal electrical effect |
| CN110514307B (en) * | 2019-08-30 | 2020-11-06 | 河南三元光电科技有限公司 | Infrared detector and system based on two-dimensional material photoelectric and thermal effects |
| CN112309440A (en) * | 2020-10-21 | 2021-02-02 | 西北工业大学 | Optical storage device based on platinum-two-dimensional indium selenide-few-layer graphite Schottky diode and storage method |
| CN112309440B (en) * | 2020-10-21 | 2022-04-26 | 西北工业大学 | Optical storage device based on platinum-two-dimensional indium selenide-few-layer graphite Schottky diode and storage method |
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Application publication date: 20190101 |