CN208806256U - Highly integrated power module and electric appliance - Google Patents
Highly integrated power module and electric appliance Download PDFInfo
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- CN208806256U CN208806256U CN201821791664.4U CN201821791664U CN208806256U CN 208806256 U CN208806256 U CN 208806256U CN 201821791664 U CN201821791664 U CN 201821791664U CN 208806256 U CN208806256 U CN 208806256U
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- power module
- highly integrated
- intelligent power
- factor corrector
- rectifier bridge
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Abstract
The utility model discloses highly integrated power module and electric appliances.The power module includes: substrate, has wiring pad and pin pad on the substrate；Rectifier bridge, power factor corrector part and intelligent power module, the rectifier bridge, the power factor corrector part and intelligent power module setting are on the substrate；It is electrically connected between the rectifier bridge and the power factor corrector part, between the power factor corrector part and the intelligent power module by metal wiring, the wiring pad and thin copper film；Wherein, the wiring pad and the neighbouring setting of the pin pad.The highly integrated power module of the utility model is while being integrated in same heat-radiating substrate for rectifier bridge, power factor corrector part and intelligent power module, the area of power module and electric-controlled plate is further reduced by optimization wire laying mode and pad locations, the scope of application is wider, production cost is lower.
Description
Technical field
The utility model relates to electrical device manufacturing fields, specifically, the utility model relates to highly integrated power module and electricity
Device.
Background technique
Intelligent power module (IPM, Intelligent Power Module) is a kind of advanced device for power switching, this
It is to be integrated with the module of power device and its drive circuit chip in matter；Intelligent power module can play it in energy management field
His integrated circuit is difficult to the important function reached, and device performance directly affects the utilization efficiency of energy resource system.Intelligent power module
With insulated gate bipolar transistor (IGBT) be kernel, by high-speed low-power-consumption tube core, optimization gate drive circuit and quickly
Circuit is protected to constitute.The tube core of insulated gate bipolar transistor in power module generally selects high-speed type, and drives electricity
Road abuts insulated gate bipolar transistor, and driving delay is small, so power module switching speed is fast, loss is small.
However, current power module and electric appliance still has much room for improvement.
Utility model content
The utility model is to be proposed based on inventor to the discovery of following facts and problem:
The power consumption of air-conditioning accounts for about the 60% of common household electrical appliances total power consumption, if fixed frequency air conditioner all to be changed into frequency conversion sky
It adjusts, overall efficiency will improve 30%, and IPM is the core devices of convertible frequency air-conditioner.Outside convertible frequency air-conditioner room electric-controlled plate include rectifier bridge,
Tetra- kinds of power factor corrector part (PFC switch), compressor IPM, blower IPM power devices.
In the prior art, respectively contact pin type is mounted on pcb board these four power devices automatically controlled outside convertible frequency air-conditioner room, so
Concentration heat dissipation is carried out with same module radiator (fin) afterwards.Rectifier bridge, PFC switch, compressor IPM and the wind of this discrete setting
Machine IPM is designed so that outdoor automatically controlled volume is larger, and cost is also higher.
The utility model is intended to alleviate at least to some extent or solve the problems, such as above-mentioned at least one of refer to.
In the one aspect of the utility model, the utility model proposes a kind of highly integrated power modules.It is practical according to this
Novel embodiment, which includes: substrate, has wiring pad and pin pad on the substrate；Rectification
Bridge, power factor corrector part and intelligent power module, the rectifier bridge, the power factor corrector part and the intelligent function
Rate module is arranged on the substrate；Between the rectifier bridge and the power factor corrector part, the PFC
It is electrically connected between device and the intelligent power module by metal wiring, the wiring pad and thin copper film；Wherein, described to tie up
Wire bonding disk and the neighbouring setting of the pin pad.
As a result, according to the highly integrated power module of the utility model embodiment by by rectifier bridge, power factor corrector
Part and intelligent power module are integrated in same heat-radiating substrate, effectively reduce the area of electric-controlled plate, and purchase rectifier bridge, function respectively
Rate factor correcting device and intelligent power module bare chip carry out power module package production, the finished product device discrete compared to purchase
Part, cost are lower.Meanwhile the highly integrated power module of the utility model will be tied up by the optimization to wire laying mode, pad locations
Wire bonding disk and the neighbouring setting of pin pad, take full advantage of the characteristics of wiring prevents take up substrate size, form metal wiring and copper
The stereo circuit topology of wiring, to further reduce the size of highly integrated power module.The high collection of the utility model as a result,
Success rate module while rectifier bridge, power factor corrector part and intelligent power module are integrated in same heat-radiating substrate,
The area of power module and electric-controlled plate is further reduced by optimization wire laying mode and pad locations, the scope of application is wider,
Production cost is lower.
Optional, the rectifier bridge includes multiple diodes.
Optional, the power factor corrector part includes switching tube, diode and power factor correction switch driving.
Optional, the switching tube of the power factor corrector part is SiC MOSFET, SiC IGBT or GaN HEMT.
It can further be conducive to reduce the switching loss of module as a result, and then be conducive to save electric energy, reduce module heating.
Optional, the intelligent power module includes compressor intelligent power module and fan intelligent power module.
Optional, the compressor intelligent power module includes multiple switch pipe, multiple diodes and compressor intelligence function
Rate module drive.
Optional, the switching tube of the compressor intelligent power module is SiC MOSFET, SiC IGBT or GaN
HEMT.It can further be conducive to reduce the switching loss of module as a result, and then be conducive to save electric energy, reduce module heating.
Optional, the fan intelligent power module includes multiple inverse conductivity type insulated gate bipolar transistors and fan intelligent
Power module driving.
Optional, the highly integrated power module further comprises: external inductors, and the external inductors are arranged described whole
It flows between bridge and the power factor corrector part；External capacitive, the external capacitive are arranged in the power factor corrector
Between part and the intelligent power module.It can further be conducive to reduce the volume of highly integrated power module as a result,.
In the another aspect of the utility model, the utility model proposes a kind of electric appliances.Implementation according to the present utility model
Example, which includes the highly integrated power module of above-described embodiment.According to the electric appliance of the utility model embodiment by using upper
The highly integrated power module for stating embodiment, can effectively reduce the space hold of power module.
Optional, above-mentioned electric appliance can be air-conditioning, washing machine, refrigerator or electromagnetic oven.Air-conditioning, washing machine, refrigerator or electromagnetism
By using the highly integrated power module of above-described embodiment in furnace, the space hold of power module can be effectively reduced, and is had more
High reliability and longer service life.
The additional aspect and advantage of the utility model will be set forth in part in the description, partially will be from following description
In become obvious, or recognized by the practice of the utility model.
Detailed description of the invention
The above-mentioned and/or additional aspect and advantage of the utility model from the description of the embodiment in conjunction with the following figures will
Become obvious and be readily appreciated that, in which:
Fig. 1 is the structural schematic diagram according to the highly integrated power module of the utility model one embodiment；
Fig. 2 is the structural schematic diagram according to the highly integrated power module of the utility model further embodiment；
Fig. 3 is PCB substrate schematic wiring diagram in the prior art；
Fig. 4 is substrate schematic wiring diagram in the highly integrated power module according to the utility model one embodiment；
Fig. 5 is the electric connecting relation of each device in the highly integrated power module according to the utility model one embodiment
Figure.
Appended drawing reference:
100: substrate；10: rectifier bridge；20: power factor corrector part (PFC switch)；30: intelligent power module (IPM)；
5: metal wiring；6: wiring pad；7: thin copper film；8: pin pad；
11: diode；12: diode；13: diode；14: diode；
21: switching tube；22: diode；23: power factor correction switch driving (driving of PFC switch)；
300: compressor intelligent power module (compressor IPM)；311: switching tube；312: switching tube；313: switching tube；
314: switching tube；315: switching tube；316: switching tube；321: diode；322: diode；323: diode；324: diode；
325: diode；326: diode；33: compressor intelligent power module drives (compressor IPM driving)；
400: fan intelligent power module (blower IPM)；411: inverse conductivity type insulated gate bipolar transistor (inverse to lead IGBT)；
412: inverse to lead IGBT；413: inverse to lead IGBT；414: inverse to lead IGBT；415: inverse to lead IGBT；416: inverse to lead IGBT；43: fan intelligent
Power module drives (blower IPM driving).
Specific embodiment
The embodiments of the present invention are described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, it is intended to for explaining the utility model, and should not be understood as to the utility model
Limitation.
Inventor has found that electric-controlled plate includes rectifier bridge, power factor school outside convertible frequency air-conditioner room in the research to electric appliance IPM
Positive tetra- kinds of device (PFC switch), compressor IPM, blower IPM power devices.In the prior art, automatically controlled this outside convertible frequency air-conditioner room
Respectively contact pin type is mounted on pcb board four kinds of power devices, then carries out concentration heat dissipation with same module radiator (fin).It is this
The rectifier bridge of discrete setting, PFC switch, compressor IPM and blower IPM are designed so that outdoor automatically controlled volume is larger, and at
This is also higher.
In consideration of it, the utility model proposes a kind of highly integrated power modules in the one aspect of the utility model.According to this
The embodiment of utility model, with reference to Fig. 1, which includes: substrate 100, rectifier bridge 10, power factor corrector
Part 20 and intelligent power module 30.Wherein, there is wiring pad and pin pad on substrate；Rectifier bridge 10, PFC
Device 20 and intelligent power module 30 are disposed on the substrate, between rectifier bridge 10 and power factor corrector part 20, power factor
It is electrically connected between correcting device 20 and intelligent power module 30 by metal wiring, wiring pad and thin copper film, and wiring pad
With the neighbouring setting of pin pad.
As a result, according to the highly integrated power module of the utility model embodiment by by rectifier bridge, power factor corrector
Part and intelligent power module are integrated in same heat-radiating substrate, effectively reduce the area of electric-controlled plate, and purchase rectifier bridge, function respectively
Rate factor correcting device and intelligent power module bare chip carry out power module package production, the finished product device discrete compared to purchase
Part, cost are lower.Meanwhile the highly integrated power module of the utility model will be tied up by the optimization to wire laying mode, pad locations
Wire bonding disk and the neighbouring setting of pin pad, take full advantage of the characteristics of wiring prevents take up substrate size, form metal wiring and copper
The stereo circuit topology of wiring, to further reduce the size of highly integrated power module.The high collection of the utility model as a result,
Success rate module while rectifier bridge, power factor corrector part and intelligent power module are integrated in same heat-radiating substrate,
The area of power module and electric-controlled plate is further reduced by optimization wire laying mode and pad locations, the scope of application is wider,
Production cost is lower.
It is further retouched in detail to according to the highly integrated power module of the utility model embodiment below with reference to Fig. 1~5
It states:
Currently, the PCB layout of this field routine is as shown in figure 3, in PCB conventional wires scheme, wiring pad 6 and pin are welded
The setting position of disk 8 is apart from each other, and thin copper film 7 occupies certain PCB surface product, causes the size of power module larger.And root
It is routed substantially according to the highly integrated power module of the utility model embodiment as shown in figure 4, wiring pad 6 and pin pad 8 are neighbouring
Setting, to greatly reduce the thin copper film area occupied for connecting wiring pad 6 Yu pin pad 8.In addition, this is practical new
The highly integrated power module of type takes full advantage of the characteristics of metal wiring 5 prevents take up PCB size, by part metals wiring across
Wiring pad and IPM driving are electrically connected by IGBT, the stereo circuit topology of metal wiring and thin copper film are formed, to further contract
The small size of highly integrated power module.
Embodiment according to the present utility model, the specific material of substrate 100 are not particularly restricted, and those skilled in the art can
To be selected according to actual needs.Specific example according to the present utility model, in order to further increase the thermal diffusivity of substrate 100
Can, substrate 100 can use ceramic substrate or the metal substrate (such as aluminum substrate or copper base etc.) with insulating layer,
In, the common high thermal conductivity material of 70~150 μ m-thicks can be used in insulating layer, so as to further be conducive to each device on substrate
Heat dissipation, to guarantee the stability and service life of module entirety.At the same time, each device on substrate can use naked core
Piece, and the thin copper film by being adapted on substrate, external metallization wiring realize electrical connection, thus, it is possible to further be conducive to substrate
The heat dissipation of upper each device, to guarantee the stability and service life of module entirety.In some embodiments, highly integrated power mould
The cross-section structure of block is followed successively by heat-radiating substrate, insulating layer, thin copper film, chip and metal wiring, as a result, the structure of power module and
Wire laying mode is more succinct reasonable, and stability is more preferably.
Embodiment according to the present utility model, rectifier bridge 10 include multiple diodes.As shown in figure 5, rectifier bridge 10 includes
Diode 11, diode 12, diode 13 and diode 14.In some embodiments, diode 11, diode 12, diode
13 and diode 14 can mutual scattering device.The setting position of each diode disperses in rectifier bridge 10 as a result, more conducively dissipates
Heat makes the stability of each element in rectifier bridge more preferably, to improve the reliability and stability of highly integrated power module entirety.
Embodiment according to the present utility model, power factor corrector part 20 include switching tube and multiple diodes.Such as Fig. 5
Shown, power factor corrector part 20 includes switching tube 21, diode 22 and power factor correction switch driving 23.In some realities
It applies in example, positive switching tube 21 may be provided between diode 22 and power factor correction switch driving 23.Can further have as a result,
Conducive to the heat dissipation of power factor correction switch pipe in power factor corrector part, reduce its temperature to other devices on heat-radiating substrate
Degree impact, to improve the reliability and stability of highly integrated power module entirety.In some embodiments, switching tube 21 is exhausted
Edge grid bipolar junction transistor (IGBT pipe).
Embodiment according to the present utility model, the switching tube 21 of power factor corrector part 20 can for SiC MOSFET,
SiC IGBT or GaN HEMT.Using the fireballing advantage of devices switch made of SiC, GaN material, opening for module can be reduced
Loss is closed, and then is conducive to save electric energy, reduces module heating, to further increase highly integrated reliability of Power Modules.Separately
Outside, inventor also found, after switching tube 21 is using SiC MOSFET, SiC IGBT or GaN HEMT, diode 22 is arranged again
For SiC MOSFET, SiC IGBT or GaN HEMT device, significant energy saving effect, therefore, two poles can not be brought
Pipe 22 can be set to device made of Si material, it is possible thereby to further decrease module cost.
Embodiment according to the present utility model, with reference to Fig. 2, intelligent power module 30 includes compressor intelligent power module
300 and fan intelligent power module 400.The highly integrated intelligent power module of the utility model is by by compressor intelligent power mould
Block 300 and fan intelligent power module 400 are integrated on same heat-radiating substrate, effectively reduce the volume of electric-controlled plate.
Embodiment according to the present utility model, compressor intelligent power module 300 include multiple switch pipe, multiple diodes
It is driven with compressor intelligent power module.As shown in figure 5, compressor intelligent power module 300 includes switching tube 311, switching tube
312, switching tube 313, switching tube 314, switching tube 315, switching tube 316, diode 321, diode 322, diode 323, two
Pole pipe 324, diode 325, diode 326 and compressor intelligent power module driving 33.In some embodiments, switching tube
311~316 manage for IGBT, and diode 321~326 is fast recovery diode.
Embodiment according to the present utility model, the switching tube 311~316 of power factor corrector part 300 can be SiC
MOSFET, SiC IGBT or GaN HEMT.Using the fireballing advantage of devices switch made of SiC, GaN material, can reduce
The switching loss of module, and then be conducive to save electric energy, reduce module heating, so that further increasing highly integrated power module can
By property.In addition, inventor also found, and after switching tube 311~316 is using SiC MOSFET, SiC IGBT or GaN HEMT, two
Pole pipe 321~326 is set as SiC MOSFET, SiC IGBT or GaN HEMT device again, can not bring significant energy conservation
Power saving effect, therefore, diode 321~326 can be set to device made of Si material, it is possible thereby to further decrease module
Cost.
Embodiment according to the present utility model, fan intelligent power module 400 include multiple inverse conductivity type insulated gate bipolars
Transistor (inverse to lead IGBT) and fan intelligent power module driving (blower IPM driving).As shown in figure 5, fan intelligent power mould
Block includes inverse leading IGBT 411, inverse leading IGBT 412, inverse lead IGBT 413, inverse lead IGBT 414, inverse lead IGBT 415, inverse lead
IGBT 416 and blower IPM driving 43.In some embodiments of the utility model, blower IPM driving 43 and compressor IPM is driven
Dynamic 33 can neighbouring setting.Since blower IPM is connected with the forceful electric power input terminal of compressor IPM, by the neighbouring setting of the two, favorably
It is succinct in the forceful electric power wiring of highly integrated power module, reduce interference, to improve stability and the service life of module.
Embodiment according to the present utility model, highly integrated the power module electrical connection such as Fig. 5 of the utility model.Such as Fig. 5
Shown, the highly integrated power module of the utility model may include external inductors 500 and external capacitive 600.Wherein, external inductors
500 are arranged between rectifier bridge and power factor corrector part；External capacitive 600 is arranged in power factor corrector part and intelligence
Between power module.It can further be conducive to reduce the volume of highly integrated power module as a result,.
In the another aspect of the utility model, the utility model proposes a kind of electric appliances.Implementation according to the present utility model
Example, which includes the highly integrated power module of above-described embodiment.According to the electric appliance of the utility model embodiment by using upper
The highly integrated power module for stating embodiment can effectively reduce the space hold of power module, and with higher reliability and more
Long service life.
Embodiment according to the present utility model, above-mentioned electric appliance can be air-conditioning, washing machine, refrigerator or electromagnetic oven.Air-conditioning is washed
By using the highly integrated power module of above-described embodiment in clothing machine, refrigerator or electromagnetic oven, the sky of power module can be effectively reduced
Between occupy, and have higher reliability and longer service life.
It should be noted that being equally applicable to above-mentioned electricity described previously for feature and advantage described in highly integrated power module
Device, this is no longer going to repeat them.
Below with reference to specific embodiment, the utility model is described, it should be noted that these embodiments are only
Descriptive, without limiting the utility model in any way.
Embodiment
Highly integrated power module substrate wire laying mode is as shown in Figure 4, the gas connection relationship between each device is as shown in Figure 5.
Highly integrated power module includes the rectifier bridge being made on same heat-radiating substrate, PFC switch, compressor IPM and blower IPM.It is logical
It crosses and rectifier bridge, PFC switch, compressor IPM and blower IPM is integrated in same substrate, automatically controlled plate suqare about 30% can be reduced.
Rectifier bridge includes the diode 11 of 4 Si materials production, diode 12, diode 13, diode 14.Input power
The alternating current of module after rectified bridge, becomes direct current, flowing to module-external inductance 500, (500 volume of inductance is big, can not integrate
To among module).
PFC switch includes switching tube 21, diode 22, PFC switch driving 23.Switching tube 21 is SiC MOSFET, SiC
IGBT GaN HEMT device, diode 22 are made of Si material.
Compressor IPM includes switching tube 311~316, fast recovery diode 321~326 and compressor IPM driving 33.
Switching tube 311~316 is SiC MOSFET, SiC IGBT or GaN HEMT device, and fast recovery diode 321~326 is
Si material is made.
Blower IPM leads IGBT 411~416, blower IPM driving 43 including inverse.Inverse IGBT411~416 of leading are Si material system
At.
Device selected by the power module of the present embodiment is bare chip, they are installed on same heat-radiating substrate.Function
The electrical connection of rate inside modules circuit realizes electrical connection by metal wiring 5, wiring drum 6, thin copper film 7.The present embodiment
Power module to wiring pad 6 be arranged position be adjusted, wiring pad 6 is positioned close at pin pad 8, to have
Effect reduces the thin copper film 7 on PCB, reaches and reduces PCB size purpose.Compared to conventional wires (Fig. 3), the present embodiment Fig. 4's
The characteristics of wire laying mode is adjusted wiring pad locations, wiring is made full use of to prevent take up PCB size forms metal wiring 5
It is topological with the stereo circuit of thin copper film 6, to further reduce the size of power module.
In the description of the present invention, it should be understood that term " center ", " longitudinal direction ", " transverse direction ", " length ", " width
Degree ", " thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside",
The orientation or positional relationship of the instructions such as " axial direction ", " radial direction ", " circumferential direction " is to be based on the orientation or positional relationship shown in the drawings, and is only
For ease of description the utility model and simplify description, rather than the device or element of indication or suggestion meaning must have it is specific
Orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.The meaning of " plurality " is at least two, such as two in the description of the present invention,
It is a, three etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the present invention unless specifically defined or limited otherwise, fisrt feature is in the second feature " on " or " down "
It can be that the first and second features directly contact or the first and second features are by intermediary mediate contact.Moreover, first is special
Sign can be fisrt feature above the second feature " above ", " above " and " above " and be directly above or diagonally above the second feature, or only
Indicate that first feature horizontal height is higher than second feature.Fisrt feature under the second feature " below ", " below " and " below " can be with
It is that fisrt feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is contained at least one embodiment or example of the utility model.In the present specification, to the schematic table of above-mentioned term
It states and is necessarily directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be with
It can be combined in any suitable manner in any one or more of the embodiments or examples.In addition, without conflicting with each other, this field
Technical staff can by the feature of different embodiments or examples described in this specification and different embodiments or examples into
Row combination and combination.
Although the embodiments of the present invention have been shown and described above, it is to be understood that above-described embodiment is
Illustratively, it should not be understood as limiting the present invention, those skilled in the art are in the scope of the utility model
Inside it can make changes, modifications, alterations, and variations to the above described embodiments.
Claims (10)
1. a kind of highly integrated power module characterized by comprising
Substrate has wiring pad and pin pad on the substrate；
Rectifier bridge, power factor corrector part and intelligent power module, the rectifier bridge, the power factor corrector part and institute
State intelligent power module setting on the substrate；Between the rectifier bridge and the power factor corrector part, the power
It is electrically connected between factor correcting device and the intelligent power module by metal wiring, wiring pad and thin copper film；Wherein, institute
State wiring pad and the neighbouring setting of the pin pad.
2. highly integrated power module according to claim 1, which is characterized in that the rectifier bridge includes multiple diodes.
3. highly integrated power module according to claim 1, which is characterized in that the power factor corrector part includes opening
Guan Guan, diode and power factor correction switch driving.
4. highly integrated power module according to claim 3, which is characterized in that the switch of the power factor corrector part
Pipe is SiC MOSFET, SiC IGBT or GaN HEMT.
5. highly integrated power module according to claim 1, which is characterized in that the intelligent power module includes compressor
Intelligent power module and fan intelligent power module.
6. highly integrated power module according to claim 5, which is characterized in that the compressor intelligent power module includes
Multiple switch pipe, multiple diodes and the driving of compressor intelligent power module.
7. highly integrated power module according to claim 5, which is characterized in that the compressor intelligent power module is opened
Guan Guanwei SiC MOSFET, SiC IGBT or GaN HEMT.
8. highly integrated power module according to claim 5, which is characterized in that the fan intelligent power module includes more
A inverse conductivity type insulated gate bipolar transistor and the driving of fan intelligent power module.
9. described in any item highly integrated power modules according to claim 1~8, which is characterized in that further comprise:
External inductors, the external inductors are arranged between the rectifier bridge and the power factor corrector part；
External capacitive, the external capacitive are arranged between the power factor corrector part and the intelligent power module.
10. a kind of electric appliance, which is characterized in that including highly integrated power module according to any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821791664.4U CN208806256U (en) | 2018-10-31 | 2018-10-31 | Highly integrated power module and electric appliance |
| PCT/CN2019/084121 WO2019237836A1 (en) | 2018-06-13 | 2019-04-24 | Highly integrated controller and electrical appliance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821791664.4U CN208806256U (en) | 2018-10-31 | 2018-10-31 | Highly integrated power module and electric appliance |
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| CN208806256U true CN208806256U (en) | 2019-04-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411462A (en) * | 2018-10-31 | 2019-03-01 | 广东美的制冷设备有限公司 | Highly integrated power module and electric appliance |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411462A (en) * | 2018-10-31 | 2019-03-01 | 广东美的制冷设备有限公司 | Highly integrated power module and electric appliance |
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Effective date of registration: 20230118 Address after: 400064 plant 1, No. 70, Meijia Road, Nan'an District, Chongqing Patentee after: Meiken Semiconductor Technology Co.,Ltd. Address before: 528311 Lingang Road, Beijiao Town, Shunde District, Foshan, Guangdong Patentee before: GD MIDEA AIR-CONDITIONING EQUIPMENT Co.,Ltd. Patentee before: MIDEA GROUP Co.,Ltd. |
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