CN208797848U - Single-phase tri-level half-bridge boosting inverter topological circuit - Google Patents
Single-phase tri-level half-bridge boosting inverter topological circuit Download PDFInfo
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- CN208797848U CN208797848U CN201821808147.3U CN201821808147U CN208797848U CN 208797848 U CN208797848 U CN 208797848U CN 201821808147 U CN201821808147 U CN 201821808147U CN 208797848 U CN208797848 U CN 208797848U
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Abstract
The utility model discloses a kind of single-phase tri-level half-bridge boosting inverter topological circuits, including input power Uin, DC boosting inductance L1, equalizing capacitance C1, equalizing capacitance C2, counnter attack diode D1, clamp diode D2, clamp diode D3, switching tube S1, switching tube S2, switching tube S3, switching tube S4, filter inductance L2, filter capacitor CoWith load resistance Ro, switching tube S2, switching tube S3, filter inductance L2One end be commonly connected to node a, switching tube S2The other end be connected separately with counnter attack diode D1, clamp diode D2, switching tube S1One end, counnter attack diode D1The other end be connected with DC boosting inductance L1One end, DC boosting inductance L1The other end be connected with input power UinOne end, input power UinThe other end be connected separately with switching tube S3The other end, switching tube S4One end and clamp diode D3One end.
Description
Technical field
The utility model relates to the inverters of converters technical field, more particularly to a kind of single-phase three level half
The topological circuit of bridge boosting inverter.
Background technique
Compared to full-bridge grid-connected inverter, half-bridge gird-connected inverter can solve to be leaked by no isolating transformer bring network access
Electric current and output DC component problem.However, its voltage utilization is lower, power tube is caused to bear higher voltage stress.It adopts
With three Level Technologies, the power tube voltage stress of half-bridge inverter can be made to reduce half, equivalent switching frequency promotes one times, tool
There is output harmonic wave content few, the advantages that filter element is small in size.Therefore, tri-level half-bridge inverter is in the grid-connected hair of distributed photovoltaic
Electric field is widely used in closing.
However, the problem that the still unresolved voltage utilization of traditional single-phase tri-level half-bridge inverter is low.In order to obtain
The standard sine wave of 220V/50Hz, DC voltage will at least reach 800V.In grid-connected photovoltaic system, in order to true
It protects under all temperature and illumination condition and obtains so high DC voltage, often increase photovoltaic cell component serial number, this
It is on fire because of over-voltage electric discharge to frequently result in direct current conflux case.Another resolving ideas is to increase voltage-boosting photo-voltaic in inverter prime to connect
Mouth converter, however two-stage type structure reduces system changeover efficiency.
Utility model content
Purpose of utility model: purpose of the utility model is to solve deficiencies in the prior art, provide a kind of single-phase
Tri-level half-bridge boosting inverter topological circuit, by increasing boost inductance and counnter attack diode, so that tri-level half-bridge inversion
Device is provided with boost capability, to reduce the voltage stress of photovoltaic bus and power tube, improves reliability；Meanwhile this is opened up
It flutters and also retains equivalent switching frequency possessed by three-level structure and double, output harmonic wave content is few, filter element volume
The advantages that small, has certain practicability.
Technical solution: a kind of single-phase tri-level half-bridge boosting inverter topological circuit described in the utility model, including it is defeated
Enter power supply Uin, DC boosting inductance L1, equalizing capacitance C1, equalizing capacitance C2, counnter attack diode D1, clamp diode D2, clamper two
Pole pipe D3, switching tube S1, switching tube S2, switching tube S3, switching tube S4, filter inductance L2, filter capacitor CoWith load resistance Ro, institute
State switching tube S2, switching tube S3, filter inductance L2One end be commonly connected to node a, the switching tube S2The other end connect respectively
It is connected to counnter attack diode D1, clamp diode D2, switching tube S1One end, the counnter attack diode D1The other end be connected with directly
Flow boost inductance L1One end, the DC boosting inductance L1The other end be connected with input power UinOne end, the input
Power supply UinThe other end be connected separately with switching tube S3The other end, switching tube S4One end and clamp diode D3One end,
The switching tube S4The other end be connected with equalizing capacitance C2One end, the equalizing capacitance C2The other end be connected separately with
Voltage capacitance C1One end, clamp diode D2The other end, clamp diode D3The other end and filter capacitor CoWith load electricity
Hinder one end of Ro, the equalizing capacitance C1The other end be connected with switching tube S1The other end, the filter inductance L2The other end
It is connected separately with filter capacitor CoWith the other end of load resistance Ro.
Further, the counnter attack diode D1One end be cathode, the counnter attack diode D1The other end be anode.
Further, the clamp diode D2One end be cathode, the clamp diode D2The other end be anode.
Further, the clamp diode D3One end be anode, the clamp diode D3The other end be cathode.
Further, the input power UinOne end be anode, the input power UinThe other end be cathode.
Further, the equalizing capacitance C1One end be cathode, the equalizing capacitance C1The other end be anode；It is described
Equalizing capacitance C2One end be cathode, the equalizing capacitance C2The other end be anode.
The utility model has the advantages that a kind of single-phase tri-level half-bridge boosting inverter topological circuit of the utility model, is risen by increasing
Voltage inductance and counnter attack diode, so that tri-level half-bridge inverter is provided with boost capability, to reduce photovoltaic bus and function
The voltage stress of rate pipe, improves reliability；Meanwhile the topology also retains equivalent switching frequency possessed by three-level structure
It doubles, the advantages that output harmonic wave content is few, and filter element is small in size, there is certain practicability.
Detailed description of the invention
Fig. 1 is the topological structure schematic diagram of the utility model；
Fig. 2 is SPWM drive signal generation circuit used by utility model；
Fig. 3 is carrier wave, modulating wave and the drive waveforms figure that SPWM used by the utility model is modulated；
Fig. 4 is the utility model in S1、S2It is open-minded, S3、S4Turn off the equivalent circuit diagram under mode；
Fig. 5 is the utility model in S1、S4Shutdown, S2、S3Open the equivalent circuit diagram under mode；
Fig. 6 is the utility model in S1、S2Shutdown, S3、S4Open the equivalent circuit diagram under mode；
Fig. 7 is the utility model in S1、S2It is open-minded, S3、S4Turn off the equivalent circuit diagram under mode；
Fig. 8 is the utility model in S1、S2Shutdown, S3、S4Open the equivalent circuit diagram under mode；
Fig. 9 is i of the utility model in a switch periodsL1Continuous main waveform diagram；
Figure 10 is i of the utility model in a switch periodsL1Interrupted main waveform diagram；
Figure 11 is the simulation waveform of the utility model；
Figure 12 is the spectrogram of the output voltage simulation waveform of the utility model.
Specific embodiment
The technical solution of the utility model is described in further detail combined with specific embodiments below.
A kind of single-phase tri-level half-bridge boosting inverter topological circuit as shown in Figure 1, including input power Uin, direct current liter
Voltage inductance L1, equalizing capacitance C1, equalizing capacitance C2, counnter attack diode D1, clamp diode D2, clamp diode D3, switching tube S1、
Switching tube S2, switching tube S3, switching tube S4, filter inductance L2, filter capacitor CoWith load resistance Ro, the switching tube S2, switch
Pipe S3, filter inductance L2One end be commonly connected to node a, the switching tube S2The other end be connected separately with counnter attack diode
D1Cathode, clamp diode D2Cathode, switching tube S1One end, the counnter attack diode D1Anode be connected with direct current liter
Voltage inductance L1One end, the DC boosting inductance L1The other end be connected with input power UinAnode, the input power
UinCathode be connected separately with switching tube S3The other end, switching tube S4One end and clamp diode D3Anode, it is described to open
Close pipe S4The other end be connected with equalizing capacitance C2Cathode, the equalizing capacitance C2Anode be connected separately with equalizing capacitance C1
Cathode, clamp diode D2Anode, clamp diode D3Cathode and filter capacitor CoWith load resistance RoOne end,
The equalizing capacitance C1Anode be connected with switching tube S1The other end, the filter inductance L2The other end be connected separately with filter
Wave capacitor CoWith load resistance RoThe other end.
The SPWM drive waveforms generation circuit of the inverter is as shown in Figure 2.The non-inverting input terminal and anti-phase input of comparator 1
End meets sinusoidal modulation wave u respectivelyrWith triangular carrier uc1.The output signal of comparator 1 is as switching tube S1Driving signal, then it is right
It is negated, as switching tube S3Driving signal.The non-inverting input terminal and inverting input terminal of comparator 2 connect sinusoidal modulation wave respectively
urWith triangular carrier uc2, wherein uc2With uc1Reverse phase.The output of comparator 2 is as switching tube S4Driving signal, then it is negated,
As switching tube S2Driving signal.The waveform correlation of above-mentioned SPWM modulation circuit is as shown in Figure 3.
The working principle and operation characteristic of the single-phase semi-bridge tri-lever boosting inverter are analyzed in detail below.Divide to simplify
Analysis process first makees following basic assumption: 1. all power tubes and filter element are ideal component；2. equalizing capacitance C1、C2Enough
Big and identical, ripple is ignored, therefore has Uc1=Uc2；3. the current potential of O point is 0.Based on above-mentioned it is assumed that should when stable state
Inverter has different operation modes in the positive and negative half cycle of sinusoidal modulation wave, therefore is analyzed separately below.
One, the positive half cycle of sinusoidal modulation wave
As boost inductance L1Discontinuous current when, which has following 3 mode in each switch periods:
(1) mode 1:[t0-ta](taFor iL1Fall to 0 at the time of point) (equivalent circuit is as shown in Figure 4)
t0Before moment, switching tube S2、S3It is open-minded, switching tube S1、S4Shutdown, inductive current iL1Linear rise.In t0Moment,
Switching tube S1、S2It is open-minded, S3、S4Shutdown.Inductance bears reversed pressure drop Udc-Uin, inductive current linear decline.To taMoment, mode
1 terminates.t0-taIn section, a point current potential Ua=UC1。
(2) mode 2:[ta-t1](taFor iL1Fall to 0 at the time of point) (equivalent circuit is as shown in Figure 7)
taMoment, inductive current iL10 is fallen to, diode D1Cut-off, mode 1 terminate, and mode 2 starts.At this point, equal piezoelectricity
Hold C1Pass through switching tube S1、S2For load-side power supply.
(3) mode 3:[t1-t2] (equivalent circuit is as shown in Figure 5)
t1Moment opens S2、S3, turn off S1、S4, the beginning of mode 2.At this point, boost inductance L1Bear forward voltage Uin, inductance
Electric current iL1Linear rise.To t2Moment, mode 2 terminate.t1-t2In section, a point current potential Ua=0.
As boost inductance L1Electric current consecutive hours, which has following 2 mode in each switch periods.Each mould
The equivalent circuit of state is as shown in figure 4, primary waves shape is as shown in Figure 5.
(1) mode 1:[t0-t1] (equivalent circuit is as shown in Figure 4)
t0Before moment, switching tube S2、S3Conducting, switching tube S1、S4Shutdown, inductive current iL1Linear rise.In t0Moment,
Open S1、S2, turn off S3、S4, the beginning of mode 1.At this point, inductance bears reversed pressure drop Udc-Uin, inductive current linear decline.To t1
Moment, mode 1 terminate.t0-t1In period, a point current potential Ua=UC1。
(2) mode 2:[t1-t2] (equivalent circuit is as shown in Figure 5)
t1Moment, S2、S3It is open-minded, switching tube S1、S4Shutdown, mode 1 terminate, and mode 2 starts.The Modality work process and liter
Mode 3 when voltage inductance discontinuous current is identical, and details are not described herein again.It is inverse in modulating wave positive half period, and when continuous current mode
Become device working condition constantly to switch between mode 1 and mode 2.
Two, the negative half period of sinusoidal modulation wave
As boost inductance L1Discontinuous current when, which has following 3 mode in each switch periods:
(1) mode 1:[t3-tb](tbFor iL1Fall to 0 at the time of point) (equivalent circuit is as shown in Figure 7)
t3Before moment, S2、S3Conducting, S1、S4Shutdown, inductive current iL1Linear rise.In t3Moment turns off S2, open-minded
S4, the beginning of mode 1.At this point, inductance bears reversed pressure drop Udc-Uin, inductive current linear decline.To tbMoment, mode 1 terminate.
t3-tbIn section, a point current potential Ua=-UC2。
(2) mode 2:[tb-t4](t4For iL1Fall to 0 at the time of point) (equivalent circuit is as shown in Figure 8)
tbMoment, inductive current iL10 is fallen to, diode D1Cut-off, mode 1 terminate, and mode 2 starts.At this point, equal piezoelectricity
Hold C2Pass through switching tube S3、S4For load-side power supply.
(3) mode 3:[t4-t5] (equivalent circuit is as shown in Figure 5)
t4Moment, S2、S3It is open-minded, S1、S4Shutdown, mode 3 start.At this point, boost inductance L1Bear forward voltage Uin, inductance
Electric current iL1Linear rise.To t5Moment, mode 3 terminate.t1-t2In section, a point current potential Ua=0.
As boost inductance L1Electric current consecutive hours, which has following 2 mode in each switch periods.Each mould
For the equivalent circuit of state as shown in Fig. 4 to Fig. 8, primary waves shape is as shown in Figure 9 and Figure 10.
(1) mode 1:[t3-t4] (equivalent circuit is as shown in Figure 8)
t3Before moment, switching tube S2、S3Conducting, switching tube S1、S4Shutdown, inductive current iL1Linear rise.In t3Moment,
Open S4, turn off S2, the beginning of mode 1.At this point, inductance bears reversed pressure drop Udc-Uin, inductive current linear decline.To t4Moment,
Mode 1 terminates.t3-t4In section, a point current potential Ua=-UC2。
(2) mode 2:[t4-t5] (equivalent circuit is as shown in Figure 5)
t4Moment, S2、S3It is open-minded, S1、S4Shutdown, mode 1 terminate, and mode 2 starts.The Modality work process and boost inductance
Mode 3 when discontinuous current is identical, and details are not described herein again.In modulating wave negative half-cycle, and when continuous current mode, inverter work
Make state constantly to switch between mode 1 and mode 2.
Simulating, verifying
For the correctness of proof theory analysis, simulating, verifying is carried out using saber simulation software, design objective is such as
Under: switching frequency fs=20kHz, DC input voitage Uin=250V, output AC voltage 220V/50Hz, boost inductance L1
=20mH, filter inductance L2=7mH, derided capacitors C1=C2=2000 μ F, filter capacitor Co=1 μ F, S1、S2、S3、S4It is all made of
IRFP460, D1 use IDW30G65C5.
Figure 11 is simulation waveform.In figure, udcFor DC bus-bar voltage；iL1For DC boosting inductive current；uC1, uC2For
Equalizing capacitance C1、C2End voltage；uoFor output voltage, UinFor input voltage.uaFor the output current potential at the inverter midpoint.
From simulation waveform as can be seen that input voltage Uin=250V, output voltage uoAmplitude be about 310V, show this
Invention has boosting inversion effect really.uaIt can be in UC1、0、-UC2Change between three kinds of varying levels, shows that the present invention has
Three level output effects.Figure 12 gives the spectrogram of output voltage simulation waveform.As can be seen that THD is about 1.2%, waveform
Quality is preferable.
The above descriptions are merely preferred embodiments of the present invention, not makees in any form to the utility model
Limitation be not intended to limit the utility model although the utility model has been disclosed with preferred embodiment as above, it is any ripe
Professional and technical personnel is known, is not being departed within the scope of technical solutions of the utility model, when in the technology using the disclosure above
Hold the equivalent embodiment made a little change or be modified to equivalent variations, but all without departing from technical solutions of the utility model
Hold, any simple modification, equivalent change and modification made by the above technical examples according to the technical essence of the present invention, still
It is within the scope of the technical solutions of the present invention.
Claims (6)
1. a kind of single-phase tri-level half-bridge boosting inverter topological circuit, it is characterised in that: including input power Uin, DC boosting
Inductance L1, equalizing capacitance C1, equalizing capacitance C2, counnter attack diode D1, clamp diode D2, clamp diode D3, switching tube S1, open
Close pipe S2, switching tube S3, switching tube S4, filter inductance L2, filter capacitor CoWith load resistance Ro, the switching tube S2, switching tube
S3, filter inductance L2One end be commonly connected to node a, the switching tube S2The other end be connected separately with counnter attack diode D1、
Clamp diode D2, switching tube S1One end, the counnter attack diode D1The other end be connected with DC boosting inductance L1One
End, the DC boosting inductance L1The other end be connected with input power UinOne end, the input power UinThe other end point
It is not connected with switching tube S3The other end, switching tube S4One end and clamp diode D3One end, the switching tube S4It is another
One end is connected with equalizing capacitance C2One end, the equalizing capacitance C2The other end be connected separately with equalizing capacitance C1One end, pincers
Position diode D2The other end, clamp diode D3The other end and filter capacitor CoIt is described equal with one end of load resistance Ro
Voltage capacitance C1The other end be connected with switching tube S1The other end, the filter inductance L2The other end be connected separately with filtered electrical
Hold CoWith the other end of load resistance Ro.
2. a kind of single-phase tri-level half-bridge boosting inverter topological circuit according to claim 1, it is characterised in that: described
Counnter attack diode D1One end be cathode, the counnter attack diode D1The other end be anode.
3. a kind of single-phase tri-level half-bridge boosting inverter topological circuit according to claim 1, it is characterised in that: described
Clamp diode D2One end be cathode, the clamp diode D2The other end be anode.
4. a kind of single-phase tri-level half-bridge boosting inverter topological circuit according to claim 1, it is characterised in that: described
Clamp diode D3One end be anode, the clamp diode D3The other end be cathode.
5. a kind of single-phase tri-level half-bridge boosting inverter topological circuit according to claim 1, it is characterised in that: described
Input power UinOne end be anode, the input power UinThe other end be cathode.
6. a kind of single-phase tri-level half-bridge boosting inverter topological circuit according to claim 1, it is characterised in that: described
Equalizing capacitance C1One end be cathode, the equalizing capacitance C1The other end be anode；The equalizing capacitance C2One end be negative
Pole, the equalizing capacitance C2The other end be anode.
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| CN201821808147.3U CN208797848U (en) | 2018-11-05 | 2018-11-05 | Single-phase tri-level half-bridge boosting inverter topological circuit |
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| CN201821808147.3U CN208797848U (en) | 2018-11-05 | 2018-11-05 | Single-phase tri-level half-bridge boosting inverter topological circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113224964A (en) * | 2021-06-16 | 2021-08-06 | 南通大学 | Control method of single-phase single-stage boost inverter |
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2018
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113224964A (en) * | 2021-06-16 | 2021-08-06 | 南通大学 | Control method of single-phase single-stage boost inverter |
| CN113224964B (en) * | 2021-06-16 | 2021-11-12 | 南通大学 | Control method of single-phase single-stage boost inverter |
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