CN208768330U - A kind of electronic device based on BGA - Google Patents
A kind of electronic device based on BGA Download PDFInfo
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- CN208768330U CN208768330U CN201821016312.1U CN201821016312U CN208768330U CN 208768330 U CN208768330 U CN 208768330U CN 201821016312 U CN201821016312 U CN 201821016312U CN 208768330 U CN208768330 U CN 208768330U
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Abstract
The utility model provides a kind of electronic device based on BGA, is related to electronic technology field.Multiple through-holes are provided on the insulating substrate that electronic device provided by the utility model includes, conductive structure is filled in through-hole, by room temperature self-curing conducing composite material, self-curing is formed conductive structure at room temperature, electronic component is electrically connected with one end of conductive structure, multiple conducting spheres are provided in the one side of insulating substrate, by room temperature self-curing conducing composite material, self-curing is formed conducting sphere at room temperature, and conducting sphere is electrically connected with the other end of conductive structure, and printed circuit board is electrically connected with conducting sphere；By weight percentage, room temperature self-curing conducing composite material is by 70%~88% low-melting-point metal and 12%~30% partially-alloyed formation of high-melting-point powder.The technical solution of the utility model can make the production method of the electronic device based on BGA simple, and cost is relatively low.
Description
Technical field
The utility model relates to electronic technology field more particularly to a kind of electronic devices based on BGA.
Background technique
In order to keep the integrated level of electronic device higher, presently, there are a kind of BGA (Ball GridArray, ball grid array) envelopes
Dress technology has been all made of " porous substrate-solder ball " this structure in the electronic device based on BGA.In this structure, substrate
For insulating materials, holes drilled through and via metalization is set to meet conductive needs using galvanoplastic on substrate, then by solder ball melting welding
Contact is formed on pad.
Inventors have found that in the plating process, carrying out the attachment of seed layer on the inner walls of the via first, then planting again
Electro-coppering in sublayer, so that hole conductive, technique is more complex, and at high cost.
Utility model content
The utility model provides a kind of electronic device based on BGA, can make the production method of the electronic device based on BGA
Simply, and cost is relatively low.
In a first aspect, the utility model provides a kind of electronic device based on BGA, adopt the following technical scheme that
A kind of electronic device based on BGA includes:
Insulating substrate is provided with multiple through-holes on the insulating substrate, and conductive structure is filled in the through-hole, described to lead
By room temperature self-curing conducing composite material, self-curing is formed electric structure at room temperature；
At least one electronic component, the electronic component are electrically connected with one end of the conductive structure；
Multiple conducting spheres, the conducting sphere are located in the one side of the insulating substrate, and another with the conductive structure
End electrical connection, by room temperature self-curing conducing composite material, self-curing is formed the conducting sphere at room temperature；
Printed circuit board, the printed circuit board are electrically connected with the conducting sphere；
Wherein, by weight percentage, the room temperature self-curing conducing composite material is golden by 70%~88% low melting point
Belong to and 12%~30% the partially-alloyed formation of high-melting-point powder；The fusing point of the low-melting-point metal 30 degrees Celsius with
Under, the fusing point of the high-melting-point powder is at 500 degrees Celsius or more.
Optionally, the low-melting-point metal is gallium simple substance or gallium-indium alloy.
Optionally, the low-melting-point metal is gallium-indium alloy, by weight percentage, the gallium-indium alloy by 75%~
85% gallium and 15%~25% indium composition.
Optionally, the high-melting-point powder is refractory metal powder, and the refractory metal powder includes nickel powder, iron powder
One or both of.
Optionally, the refractory metal powder is nickel powder, and by weight percentage, the room temperature self-curing conduction is compound
Material is by 75%~83% low-melting-point metal and the partially-alloyed formation of 17%~25% nickel powder.
Optionally, the partial size of the refractory metal powder is 10nm~1 μm.
Second aspect, the utility model embodiment provides a kind of production method of electronic device based on BGA, using as follows
Technical solution:
The production method includes:
Step S1,70%~88% low-melting-point metal and 12%~30% Gao Rong by weight percentage, are weighed
Point powder, and the two is made to carry out partially-alloyed formation room temperature self-curing conducing composite material, wherein the low-melting-point metal
Fusing point is at 30 degrees Celsius hereinafter, the fusing point of the high-melting-point powder is at 500 degrees Celsius or more；
Step S2, an insulating substrate is provided, forms multiple through-holes on the insulating substrate；
Step S3, room temperature self-curing conducing composite material is filled in the through-hole, and makes room temperature in described through-hole one end
Self-curing conducing composite material is piled into spherical shape；
Step S4, making the room temperature self-curing conducing composite material filled in the through-hole, self-curing, formation are led at room temperature
Electric structure, and make to be piled into spherical room temperature self-curing conducing composite material self-curing at room temperature, form conducting sphere；
Step S5, at least one electronic component is provided；
Step S6, the electronic component and one end of the conductive structure are electrically connected；
Step S7, printed circuit board is provided, the printed circuit board is made to pass through the conducting sphere and the conductive structure
Other end electrical connection.
Optionally, in step s 4, by way of ultrasound, heating or logical DC current, accelerate self-curing.
Optionally, in step S3, it is multiple that room temperature self-curing conduction is filled in the through-hole in such a way that microneedles squeeze
Condensation material.
Optionally, in step S1, by will the low-melting-point metal and the high-melting-point powder mix after carry out ball milling or
The mode of the vertical kneading of person makes the two carry out partially-alloyed formation room temperature self-curing conducing composite material.
The utility model provides a kind of electronic device and preparation method thereof based on BGA, should the electronic device based on BGA
In, it is provided with multiple through-holes on insulating substrate, is filled with conductive structure in through-hole, conductive structure is compound by room temperature self-curing conduction
Self-curing is formed material at room temperature, by weight percentage, room temperature self-curing conducing composite material by 70%~88% it is low
Melting point metals and 12%~30% the partially-alloyed formation of high-melting-point powder, the fusing point of low-melting-point metal is at 30 degrees Celsius
Hereinafter, the fusing point of high-melting-point powder is at 500 degrees Celsius or more, so that in the manufacturing process of the electronic device based on BGA,
Room temperature self-curing conducing composite material is filled in through-hole, makes the room temperature self-curing conducing composite material filled in through-hole in room temperature
Lower self-curing, can form conductive structure, compared with the prior art in electroplating technology, the technical solution of the utility model can
The production method for making the electronic device based on BGA is simple, and cost is relatively low.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is
Some embodiments of the utility model, for those of ordinary skill in the art, in the premise of not making the creative labor property
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the schematic cross-section of the electronic device provided by the embodiment of the utility model based on BGA；
Fig. 2 is the flow chart of the production method of the electronic device provided by the embodiment of the utility model based on BGA.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
It should be noted that each technical characteristic in the utility model embodiment can be mutual in the absence of conflict
In conjunction with.
The utility model embodiment provides a kind of electronic device based on BGA, and as shown in FIG. 1, FIG. 1 is the utility model realities
The schematic cross-section for applying the electronic device based on BGA of example offer, being somebody's turn to do the electronic device based on BGA includes:
Insulating substrate 1 is provided with multiple through-holes 2 on insulating substrate 1, is filled with conductive structure 3, conductive structure 3 in through-hole 2
By room temperature self-curing conducing composite material, self-curing is formed at room temperature；
At least one electronic component 4, electronic component 4 are electrically connected with one end of conductive structure 3；
Multiple conducting spheres 5, conducting sphere 5 are located in the one side of insulating substrate 1, and are electrically connected with the other end of conductive structure 3；
Printed circuit board 6, printed circuit board 6 are electrically connected with conducting sphere 5；
Wherein, by weight percentage, room temperature self-curing conducing composite material by 70%~88% low-melting-point metal, with
And 12%~30% the partially-alloyed formation of high-melting-point powder；Wherein, the fusing point of low-melting-point metal is at 30 DEG C hereinafter, high-melting-point
The fusing point of powder is at 500 DEG C or more.
Above-mentioned conducting sphere 5 can be identical as the material of conductive structure 3, i.e., conducting sphere 5 is also compound by room temperature self-curing conduction
Self-curing is formed material at room temperature, and such setting can allow conducting sphere 5 and conductive structure 3 shape in one-time process
At, the manufacture craft of simplified electronic device, and without interface between conducting sphere 5 and conductive structure 3, electronic transmission performance is preferable.
Containing there are three types of ingredients, i.e. low-melting-point metal, high-melting-point powder and the two in room temperature self-curing conducing composite material
Alloy reactant.Above-mentioned room temperature self-curing conducing composite material realizes that the principle of room temperature self-curing is as follows: above-mentioned three kinds of ingredients
In, alloying component can induce remaining low-melting-point metal, and gradually generation alloy reacts at room temperature with remaining high-melting-point powder,
So that alloy reactant accounting in room temperature self-curing conducing composite material is gradually increased, so that room temperature self-curing conduction is multiple
Condensation material is solid by thick variation.
Illustratively, the weight percent of low-melting-point metal can be with are as follows: 72%, 74%, 76%, 78%, 80%, 82%,
84% or 86%；The weight percent of high-melting-point powder can be with are as follows: 14%, 16%, 18%, 20%, 22%, 24%, 26%
Or 28%.
The mode that electronic component 4 is electrically connected with one end of conductive structure 3 can there are many, such as both directly electrical connection,
Alternatively, the two is electrically connected by the cabling (such as copper foil) on insulating substrate 1.
When electronic device based on BGA is with structure as described above, in the manufacturing process of the electronic device based on BGA
In, room temperature self-curing conducing composite material is filled in through-hole 2, makes the room temperature self-curing conducing composite material filled in through-hole 2
Self-curing at room temperature can form conductive structure 3, compared with the prior art in electroplating technology, the technology of the utility model
Scheme can make the production method of the electronic device based on BGA simple, and cost is relatively low.
Insulating substrate 1 in the utility model embodiment can be the insulation such as glass substrate, plastic base, ceramic substrate
Substrate.Wherein, when insulating substrate 1 is plastic base (such as pet substrate, PVC substrate, PI substrate etc.), insulating substrate 1 has
Deflection, frivolous feature can not only reduce the volume and weight of electronic equipment, can also be suitble to requirement of various shapes,
So that the electronic device based on BGA can be applied in flexible electronic devices.Based on this, using in the utility model embodiment
When room temperature self-curing conducing composite material makes conductive structure 3, it can also avoid solidifying in room temperature self-curing conducing composite material
In the process to the influence of insulating substrate 1, be conducive to maintain the structure of the electronic device based on BGA and the stabilization of performance.
Above-mentioned room temperature self-curing conducing composite material is being in the liquid with certain viscosity before, and can after use
Self-curing is realized at room temperature, wherein the alloying level of low-melting-point metal and high-melting-point powder is higher, and the room temperature of formation is from admittedly
The viscosity for changing conducing composite material is bigger.
The viscosity of room temperature self-curing conducing composite material can specifically pass through the selection of low-melting-point metal, high-melting-point powder
Ratio between selection, low-melting-point metal and high-melting-point powder, one or more of factors such as partial size of high-melting-point powder into
Row is adjusted, to finally obtain the room temperature self-curing conducing composite material applied in suitable the utility model embodiment.
Specifically, the high-melting-point powder part by fusing point in 30 DEG C of low-melting-point metals and fusing point below at 500 DEG C or more
The mode that room temperature self-curing conducing composite material is formed after alloying is as follows: by a certain percentage by fusing point in 30 DEG C of eutectics below
High-melting-point powder of the point metal with fusing point at 500 DEG C or more uniformly mixes a period of time, can be by a variety of during mixing
Mode makes fusing point that alloy occur in the part of 30 DEG C of low-melting-point metals and fusing point below in 500 DEG C or more of high-melting-point powder
It reacts (i.e. partially-alloyed).Optionally, above-mentioned mixed process can be realized by traditional heating, high-voltage electric shock or ball milling,
So that fusing point is anti-in the part generation alloy of 30 DEG C of low-melting-point metals and fusing point below in 500 DEG C or more of high-melting-point powder
It answers.Wherein, due to can produce high energy, including thermal energy and mechanical energy in the ball-milling treatment of certain revolving speed, instantaneous temperature
Degree maximum can reach 1600 DEG C or more, can meet the alloy reaction condition of various metals, and its Energy distribution in ball-milling treatment
Unevenness is more suitable for that the alloy reaction of part occurs, prepares the room temperature self-curing conducing composite material in the utility model embodiment.
The ball milling methods such as planetary ball mill, stirring ball-milling specifically can be used.Optionally, during ball-milling treatment: rotational speed of ball-mill be 600~
2000 revs/min；Ball-milling Time is 10~300 minutes.
Optionally, in the utility model embodiment fusing point 30 DEG C of low-melting-point metals below include: fusing point 30 DEG C with
Under low-melting-point metal simple substance, low-melting point metal alloy or by low-melting-point metal simple substance/low-melting point metal alloy and metal nano
The electrical-conductive nanometer fluid that particle and fluid dispersion are mixed to form.More specifically, when selecting electrical-conductive nanometer fluid, fluid point
Powder is preferably ethyl alcohol, propylene glycol, glycerine, polyvinylpyrrolidone, dimethyl silicone polymer, polyethylene glycol, poly- methyl-prop
One of e pioic acid methyl ester.
Low-melting point metal alloy ingredient may include gallium, indium, tin, zinc, bismuth, lead, cadmium, mercury, silver, copper, sodium, potassium, magnesium, aluminium, iron,
One of nickel, cobalt, manganese, titanium, vanadium, boron, carbon, silicon, cesium element etc. are a variety of.
Optionally, fusing point includes: mercury simple substance, gallium simple substance, caesium in 30 DEG C of specific ranges of choice of low-melting-point metal below
Simple substance, gallium-indium alloy, gallium-indium-tin alloy, gallium tin alloy, gallium kirsite, gallium indium kirsite, gallium red brass, gallium indium tin zinc close
Gold, gallium tin cadmium alloy, gallium Zn-Cd alloy, bismuth indium alloy, bismuth tin alloy, bismuth indium stannum alloy, bismuth indium kirsite, bismuth red brass,
One of bismuth indium red brass, leypewter, gun-metal, tin pltine, Tin Silver Copper Alloy, bismuth terne metal are several
Kind.
Optionally, low-melting-point metal is gallium simple substance, caesium simple substance, gallium-indium alloy, gallium tin alloy, gallium-indium-tin alloy etc..Into one
Step selection, low-melting-point metal is gallium-indium alloy, and by weight percentage, gallium-indium alloy is by 75%~85% gallium and 15%~25%
Indium composition.For example, by weight percentage, low-melting-point metal is made of 78.6% gallium and 21.4% indium, alternatively, low-melting-point metal
It is made of 75% gallium and 25% indium.
Optionally, high-melting-point powder is refractory metal powder in the utility model embodiment, alternatively, high-melting-point powder is
Refractory metal powder and its hopcalite.
When high-melting-point powder is refractory metal powder, the refractory metal powder in the utility model embodiment may include
The combination of one or more of zinc powder, copper powder, iron powder, nickel powder.Preferably, it in order to form higher melting-point alloy reactant, mentions
High room temperature self-curing conducing composite material solidify after temperature tolerance, can be selected in the utility model embodiment fusing point 1000 DEG C with
On the combination of one or more of refractory metal powder, such as copper powder, iron powder, nickel powder.Preferably, the utility model is implemented
Fusing point in example selects pure copper powder, iron powder or nickel powder in 1000 DEG C or more of refractory metal powder, to avoid as far as possible
Influence of the impurity to alloying reaction.
Optionally, refractory metal powder includes one or both of nickel powder, iron powder.Using low-melting-point metal as gallium simple substance
Or for gallium-base alloy, when refractory metal powder is iron powder, alloy occurs with the gallium in gallium simple substance or gallium-base alloy and reacts
Generate FeGa3, when refractory metal powder is nickel powder, alloy occurs with the gallium in gallium simple substance or gallium-base alloy and reacts generation
NiGa4。
In one example, low-melting-point metal selects gallium simple substance, and refractory metal powder selects iron powder, alloy reactant
For FeGa3。
In another example, low-melting-point metal selects gallium-indium alloy, and refractory metal powder selects nickel powder, and alloy is anti-
Answering object is Ni2Ga3、NiGa4、NiGa5、Ni3Ga7And InNi3One of or it is a variety of.
In another example, low-melting-point metal selects gallium-indium alloy, and refractory metal powder selects nickel powder and iron powder,
Alloy reactant is FeGa3、Ni2Ga3、NiGa4、NiGa5、Ni3Ga7And InNi3One of or it is a variety of.
In another example, low-melting-point metal select gallium-indium-tin alloy, refractory metal powder select nickel powder, iron powder and
Zinc powder, alloy reactant are FeGa3、Ni2Ga3、NiGa4、NiGa5、Ni3Ga7、InNi3, one of Sn-Zn or a variety of.
In another example, low-melting-point metal selects gallium-indium alloy, and refractory metal powder selects iron powder and copper powder,
Alloy reactant is FeGa3With one of Cu-In or a variety of.
Here, the utility model provides the assembled scheme of a variety of low-melting-point metals Yu refractory metal powder, this field
Technology should be understood that in addition to the assembled scheme that the example above illustrates, other assembled schemes also can be used, it is no longer superfluous herein
It states.
Illustratively, it being selected in the utility model embodiment, refractory metal powder is nickel powder, by weight percentage,
Room temperature self-curing conducing composite material is partially-alloyed by 75%~83% low-melting-point metal and 17%~25% nickel powder
It is formed.
Inventors have found that electric conductivity of the partial size of refractory metal powder to room temperature self-curing conducing composite material, room
The viscosity (being determined by refractory metal powder and low-melting point metal alloy degree) of warm self-curing conducing composite material, room temperature oneself
Self-curing time of curing conductive composite material etc. all has an impact.Optionally, the partial size of refractory metal powder is the μ of 10nm~1
M, further preferably 20nm~100nm so that room temperature self-curing conducing composite material not only have suitable viscosity in order to
It is filled in through-hole 2, also there is preferable electric conductivity, room temperature self-curing conducing composite material can also in addition had suitable
The self-curing time.Wherein, when homogenous spheres (or the group of certain physical characteristic or physical behavio(u)r of tested particle and a certain diameter
Close) it is most close when, just using the diameter of the sphere (or combination) as the partial size (or size distribution) for being tested particle.
In addition, the utility model embodiment provides a kind of production method of electronic device based on BGA, specifically, such as Fig. 2
Shown, Fig. 2 is the flow chart of the production method of the electronic device provided by the embodiment of the utility model based on BGA, the production side
Method includes:
Step S1,70%~88% low-melting-point metal and 12%~30% Gao Rong by weight percentage, are weighed
Point powder, and the two is made to carry out partially-alloyed formation room temperature self-curing conducing composite material, wherein the fusing point of low-melting-point metal
At 30 degrees Celsius hereinafter, the fusing point of high-melting-point powder is at 500 degrees Celsius or more.
Optionally, in step sl, by will low-melting-point metal and high-melting-point powder mix after carry out ball milling or vertical
The mode of kneading makes the two carry out partially-alloyed formation room temperature self-curing conducing composite material.Low-melting-point metal and high-melting-point
The partially-alloyed process of powder is as follows: low-melting-point metal uniformly being mixed a period of time with high-melting-point powder, in mixed mistake
Energy is provided by way of ball milling or vertical kneading in journey, closes low-melting-point metal with the part in high-melting-point powder
Gold reaction (i.e. partially-alloyed).
In one example, the method for making room temperature self-curing conducing composite material includes: under room temperature for the low of liquid
In melting point metals, high-melting-point powder is added in proportion, and the mixture of low-melting-point metal and high-melting-point powder is placed in ball grinder, into
Row ball milling mixing, rotational speed of ball-mill are 600~1000 revs/min, and Ball-milling Time is 20 minutes~120 minutes, preferably 20 minutes
~60 minutes, it should be argon gas or vacuum environment in mechanical milling process, in ball grinder, until low-melting-point metal and high-melting-point powder are mixed
It closes uniformly, specifically, if ar gas environment, the ar pressure in ball grinder should be remained greater than ambient atmosphere pressure, if true
Altitude, the air pressure in ball grinder should be not more than 1 kPa.
In another example, the method for production room temperature self-curing conducing composite material includes: under room temperature for liquid
In low-melting-point metal, high-melting-point powder is added in proportion, and the mixture of low-melting-point metal and high-melting-point powder is placed in vertical pinch
Conjunction machine is mediated, and 150~200 DEG C, preferably 200 DEG C are heated to, and mediating revolving speed is 72~96 revs/min, kneading time 120
Minute~180 minutes, it should be argon gas or vacuum environment in vertical kneading process, in vertical kneading mixer, until low-melting-point metal
It is uniformly mixed with high-melting-point powder, specifically, if ar gas environment, the ar pressure in vertical kneading mixer, which should remain, to be greater than
Ambient atmosphere pressure, if vacuum environment, the air pressure in vertical kneading mixer should be not more than 1 kPa.
It should be noted that if room temperature self-curing conducing composite material is not necessarily to use immediately after preparation, then it should be by it
Be stored under -20 DEG C and following temperature, preferably -30 DEG C and following temperature, avoid room temperature self-curing conducing composite material from
It reacts inside body, when use places it in after becoming liquid at room temperature and can be used.
Step S2, an insulating substrate is provided, forms multiple through-holes on insulating substrate.
Multiple through-holes can be formed on insulating substrate by modes such as etchings.
Step S3, room temperature self-curing conducing composite material is filled in through-hole, and leads room temperature self-curing in through-hole one end
Composite is piled into spherical shape；
Specifically room temperature self-curing conducing composite material can be filled in through-hole in such a way that microneedles squeeze.
Step S4, make the room temperature self-curing conducing composite material filled in through-hole self-curing at room temperature, form conductive knot
Structure, and make to be piled into spherical room temperature self-curing conducing composite material self-curing at room temperature, form conducting sphere.
The self-curing time of room temperature self-curing conducing composite material is about 6~10 hours.Optionally, in step s 4, may be used
In a manner of through ultrasound, heating or logical DC current, accelerate self-curing.It wherein, can will be on substrate by way of ultrasound
Self-curing time of room temperature self-curing conducing composite material shorten 0.5 hour, can be with by way of being heated to 60 degrees Celsius
The self-curing time of room temperature self-curing conducing composite material on substrate is shortened 1 hour, the side of the current DC by leading to 10A
The self-curing time of room temperature self-curing conducing composite material on substrate can be shortened 1 hour by formula.
Step S5, at least one electronic component is provided；
Step S6, it is electrically connected electronic component with one end of conductive structure；
The mode that electronic component is electrically connected with one end of conductive structure can there are many, such as both directly electrical connection, or
Person, the two are electrically connected by the cabling (such as copper foil) on insulating substrate, when the two passes through the cabling electricity on insulating substrate
When connection, the production method in the utility model embodiment further includes the steps that forming cabling on insulating substrate, which exists
Before step S6, the relationship between other steps is without limiting.
Step S7, printed circuit board is provided, printed circuit board is made to pass through the other end of conducting sphere and conductive structure electricity
Connection.
For example, printed circuit board can be made to pass through the other end of conducting sphere and conductive structure electricity by welding
Conducting sphere and printed circuit board can also be bonded by room temperature self-curing conducing composite material, be led to room temperature self-curing by connection
After composite solidification, stable structure is formed.
Wherein, step S5 and step S6 can be carried out before step S7, can also be carried out after step s 7, herein not
It is defined.
It should be noted that the related content of the electronic device in the utility model embodiment based on BGA is suitable for it
Production method, the related content of production method may also apply to the electronic device based on BGA, no longer repeated herein.
The utility model provides a kind of electronic device and preparation method thereof based on BGA, should the electronic device based on BGA
In, it is provided with multiple through-holes on insulating substrate, is filled with conductive structure in through-hole, conductive structure is compound by room temperature self-curing conduction
Self-curing is formed material at room temperature, by weight percentage, room temperature self-curing conducing composite material by 70%~88% it is low
Melting point metals and 12%~30% the partially-alloyed formation of high-melting-point powder, the fusing point of low-melting-point metal is at 30 degrees Celsius
Hereinafter, the fusing point of high-melting-point powder is at 500 degrees Celsius or more, so that in the manufacturing process of the electronic device based on BGA,
Room temperature self-curing conducing composite material is filled in through-hole, makes the room temperature self-curing conducing composite material filled in through-hole in room temperature
Lower self-curing, can form conductive structure, compared with the prior art in electroplating technology, the technical solution of the utility model can
The production method for making the electronic device based on BGA is simple, and cost is relatively low.
Finally, it should be noted that the above various embodiments is only to illustrate the technical solution of the utility model, rather than it is limited
System；Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should
Understand: it is still possible to modify the technical solutions described in the foregoing embodiments, or to some or all of
Technical characteristic is equivalently replaced；And these are modified or replaceed, it does not separate the essence of the corresponding technical solution, and this is practical new
The range of each embodiment technical solution of type.
Claims (2)
1. a kind of electronic device based on BGA characterized by comprising
Insulating substrate is provided with multiple through-holes on the insulating substrate, and conductive structure, the conductive knot are filled in the through-hole
By room temperature self-curing conducing composite material, self-curing is formed structure at room temperature；
At least one electronic component, the electronic component are electrically connected with one end of the conductive structure；
Multiple conducting spheres, the conducting sphere are located in the one side of the insulating substrate, and electric with the other end of the conductive structure
Connection, by room temperature self-curing conducing composite material, self-curing is formed the conducting sphere at room temperature；
Printed circuit board, the printed circuit board are electrically connected with the conducting sphere.
2. the electronic device according to claim 1 based on BGA, which is characterized in that the low-melting-point metal is gallium simple substance
Or gallium-indium alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821016312.1U CN208768330U (en) | 2018-06-29 | 2018-06-29 | A kind of electronic device based on BGA |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821016312.1U CN208768330U (en) | 2018-06-29 | 2018-06-29 | A kind of electronic device based on BGA |
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| CN208768330U true CN208768330U (en) | 2019-04-19 |
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| Country | Link |
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2018
- 2018-06-29 CN CN201821016312.1U patent/CN208768330U/en active Active
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