CN208754200U - A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier - Google Patents
A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier Download PDFInfo
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- CN208754200U CN208754200U CN201821544135.4U CN201821544135U CN208754200U CN 208754200 U CN208754200 U CN 208754200U CN 201821544135 U CN201821544135 U CN 201821544135U CN 208754200 U CN208754200 U CN 208754200U
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- radio frequency
- negative pressure
- nmos tube
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Abstract
The utility model discloses a kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier, including negative pressure generation unit, electrical level shift units and can open circuit shutdown radio frequency rectification unit；Negative pressure generation unit and can open circuit shutdown radio frequency rectification unit Differential Input just terminating positive radiofrequency signal RF+；Negative pressure generation unit and can open circuit shutdown radio frequency rectification unit Differential Input negative terminal meet negative radiofrequency signal RF-；The power supply pole of electrical level shift units meets power supply VDD, the control termination control signal V of electrical level shift unitsCTR；The input terminal of the output connection electrical level shift units of negative pressure generation unit；The output of electrical level shift units connects can the breaking input terminal for turning off radio frequency rectification unit；It can output end of the breaking output end for turning off radio frequency rectification unit as entire rectifier.The utility model PCE with higher in enabled state has lower P in off stateOFF, circuit structure is simple, and design is easy, and chip area is small, reduces production cost.
Description
Technical field
The utility model relates to IC design technical fields, and in particular to a kind of negative pressure open circuit turn-off type CMOS radio frequency
Rectifier.
Background technique
With the development of low consumption circuit, microelectronic device can be by collecting the RF energy in environment as itself confession
Electricity, the power-conversion efficiencies (PCE) for how improving RF energy collection system become hot topic.Rectifier is that radio frequency collects system
The important component of system, the power of RF energy collection system can be effectively improved by carrying out shutdown control appropriate to rectifier
Transformation efficiency.However, traditional turns off rectifier using short-circuit shutdown method, shutdown control is added on radio-frequency signal path
Pipe realizes short circuit shutdown when controlling pipe conducting, and shutdown power consumption is mainly generated by the conducting power consumption of control pipe, turns off power consumption
(POFF) larger, it is unfavorable for improving PCE.
Utility model content
To be solved in the utility model is that existing turn off when rectifier turns off turns off power consumption POFFLarger problem,
A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier is provided.
To solve the above problems, the utility model is achieved through the following technical solutions:
A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier, including negative pressure generation unit, electrical level shift units and can break
Road turns off radio frequency rectification unit；Negative pressure generation unit and can open circuit shutdown radio frequency rectification unit Differential Input just terminating positive radio frequency
Signal RF+；Negative pressure generation unit and can open circuit shutdown radio frequency rectification unit Differential Input negative terminal meet negative radiofrequency signal RF-；Electricity
The power supply pole of translation bit location meets power supply VDD, the control termination control signal V of electrical level shift unitsCTR；Negative pressure generation unit
The input terminal of output connection electrical level shift units；The output of electrical level shift units connects can the breaking input for turning off radio frequency rectification unit
End；It can output end of the breaking output end for turning off radio frequency rectification unit as entire rectifier.
In above scheme, negative pressure generation unit is by NMOS tube MN1、MN2, PMOS tube MP1、MP2With capacitor C1-C3It constitutes；
NMOS tube MN1Drain electrode, PMOS tube MP1Drain electrode, NMOS tube MN2Grid, PMOS tube MP2Grid and capacitor C1Bottom crown
It is connected, capacitor C1Top crown formed negative pressure generation unit Differential Input anode；NMOS tube MN2Drain electrode, PMOS tube MP2's
Drain electrode, NMOS tube MN1Grid, PMOS tube MP1Grid and capacitor C2Top crown be connected, capacitor C2Bottom crown formed it is negative
Pressure generates the Differential Input negative terminal of unit；NMOS tube MN1Source electrode and NMOS tube MN2Source electrode and capacitor C3Top crown be connected
Afterwards, the output end of negative pressure generation unit is formed；Capacitor C3Bottom crown, PMOS tube MP1Source electrode and PMOS tube MP2Source electrode connect
Ground.
In above scheme, electrical level shift units are by NMOS tube MN3、MN4, PMOS tube MP3、MP4It is constituted with phase inverter A；PMOS
Pipe MP3Source electrode and PMOS tube MP4Source electrode be connected after formed electrical level shift units power supply pole；NMOS tube MN3Source electrode and
NMOS tube MN4Source electrode after formed electrical level shift units input terminal；PMOS tube MP3Grid connection phase inverter A input terminal,
PMOS tube MP4Grid connection phase inverter A output end, PMOS tube MP3Grid formed electrical level shift units control terminal；
NMOS tube MN3Grid meet NMOS tube MN4Drain electrode, NMOS tube MN4Grid meet NMOS tube MN3Drain electrode, PMOS tube MP4Leakage
The output end of pole formation electrical level shift units.
In above scheme, radio frequency rectification unit breaking can be turned off by NMOS tube MN5、MN6, PMOS tube MP5、MP6, switch control
Tubulation SW and capacitor C4-C6It constitutes；NMOS tube MN5Drain electrode, PMOS tube MP5Drain electrode, NMOS tube MN6Grid, PMOS tube MP6
Grid and capacitor C4Bottom crown be connected, capacitor C4Top crown formed can open circuit shutdown radio frequency rectification unit Differential Input
Anode；NMOS tube MN6Drain electrode, PMOS tube MP6Drain electrode, NMOS tube MN5Grid, PMOS tube MP5Grid and capacitor C5's
Top crown is connected, capacitor C5Bottom crown formed can open circuit shutdown radio frequency rectification unit Differential Input negative terminal；NMOS tube MN5's
Source electrode, NMOS tube MN6Source electrode be connected with the source electrode of switch control pipe SW；The grounded drain of switch control pipe SW；Switch control
The grid of pipe SW is formed can the breaking input terminal for turning off radio frequency rectification unit；PMOS tube MP5Source electrode, PMOS tube MP6Source electrode and
Capacitor C6Top crown be connected after, formed can open circuit shutdown radio frequency rectification unit output end；Capacitor C6Bottom crown ground connection.
In above scheme, switch control pipe SW is NMOS tube.
Compared with prior art, the utility model has the following characteristics:
1, control mode is turned off using open circuit, so that shutdown power consumption POFF is solely dependent upon electric leakage function when control pipe turns off
The shutdown power consumption that can turn off radio frequency rectification unit can be greatly lowered in consumption, improve transformation efficiency.
2, make can control using negative voltage shutdown, make the shutdown power consumption for turning off radio frequency rectification unit with ena-bung function
It further decreases, is conducive to improve efficiency.
3, there is very strong practicability, can be widely applied in low-power consumption RF energy collection system；When | VINWhen |=1V,
The power consumption of circuit in the off case is POFF=-24dBm reduces 23dB than conventional short-circuit method shutdown rectifier, has lower
Shutdown power consumption.
4, circuit scalability is strong, if necessary to improve output voltage, can output end cascade it is identical can open circuit close
Disconnected radio frequency rectification unit.
Detailed description of the invention
A kind of functional block diagram of negative pressure open circuit turn-off type CMOS radio frequency rectifier of Fig. 1.
A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier circuit schematic diagram of Fig. 2.
Specific embodiment
For the purpose of this utility model, technical solution and advantage is more clearly understood, below in conjunction with specific example, and join
According to attached drawing, the utility model is further described.
Referring to Fig. 1 and 2, a kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier, including a negative pressure generation unit, one
Electrical level shift units and one can open circuit shutdown radio frequency rectification unit.Negative pressure generation unit and can open circuit shutdown radio frequency rectification it is single
The Differential Input of member is just terminating positive radiofrequency signal RF+.Negative pressure generation unit and can open circuit shutdown radio frequency rectification unit difference it is defeated
Enter negative terminal and meets negative radiofrequency signal RF-.The power supply pole of electrical level shift units meets power supply VDD, the control of electrical level shift units, which terminates, to be controlled
Signal V processedCTR.The input terminal of the output connection electrical level shift units of negative pressure generation unit；The output of electrical level shift units, which connects, to break
The input terminal of road shutdown radio frequency rectification unit；It can output of the breaking output end for turning off radio frequency rectification unit as entire rectifier
End.
Above-mentioned negative pressure generation unit includes four rectification metal-oxide-semiconductors, a negative pressure storage capacitance, two commutation capacitors, function
It is to generate direct current output negative voltage VSS, and the negative polarity supply voltage as subsequent cell.In the present embodiment, negative pressure generates single
Member is by NMOS tube MN1、MN2, PMOS tube MP1、MP2With capacitor C1-C3It constitutes；The size of all NMOS tubes is 3.6 μm/0.18 μm,
The size of all PMOS is 18 μm/0.18 μm, and all capacitor's capacities are 1.13pF.NMOS tube MN1Drain electrode, PMOS tube MP1Leakage
Pole, NMOS tube MN2Grid, PMOS tube MP2Grid and capacitor C1Bottom crown be connected, capacitor C1Top crown formed negative pressure
Generate the Differential Input anode of unit；NMOS tube MN2Drain electrode, PMOS tube MP2Drain electrode, NMOS tube MN1Grid, PMOS tube
MP1Grid and capacitor C2Top crown be connected, capacitor C2Bottom crown formed negative pressure generation unit Differential Input negative terminal；
NMOS tube MN1Source electrode and NMOS tube MN2Source electrode and capacitor C3Top crown be connected after, form the output of negative pressure generation unit
End；Capacitor C3Bottom crown, PMOS tube MP1Source electrode and PMOS tube MP2Source electrode ground connection.
In negative pressure generation unit, when RF+ terminal potential is positive value, VX1It also is positive value, since signal is Differential Input,
The end RF- is negative value, VY1It also is negative value, at this point, MN2And MP1Conducting, MN1And MP2Cut-off.On the one hand, C1On charge flow through MP1
It discharges to GND, the charge on another aspect C3 flows through MN2It is transferred to C2；When RF+ terminal potential is negative value, VX1It also is negative value, by
It is Differential Input in signal, the end RF- is positive value, VY1It also is positive value, at this point, MN1And MP2Conducting, MN2And MP1Cut-off.On the one hand
C2On charge flow through MP2It discharges to GND, another aspect C3On charge flow through MN1It is transferred to C1.Output end C3It plays filtering and deposits
Negative voltage effect is stored up, the effect of negative pressure generation unit is that exchange input is switched to negative pressure direct current output.
Above-mentioned electrical level shift units include four metal-oxide-semiconductors, a phase inverter, by anti-between the grid of two of them PMOS tube
The connection of phase device, two NMOS tube cross-couplings constitute latch structure, VCTRFor input control signal, VGSignal is controlled for output.
The output negative voltage V of negative voltage generation unitSSAs the negative polarity power supply of electrical level shift units, input control signal is through over level
After shift unit, the output control signal V that high level is constant, and low level is negative is obtainedG。
In the present embodiment, electrical level shift units are by NMOS tube MN3、MN4, PMOS tube MP3、MP4It is constituted with phase inverter A；Institute
The size for having NMOS tube is 3.6 μm/0.18 μm, and the size of all PMOS is 18 μm/0.18 μm.PMOS tube MP3Source electrode and
PMOS tube MP4Source electrode be connected after formed electrical level shift units power supply pole；NMOS tube MN3Source electrode and NMOS tube MN4Source electrode
The input terminal of electrical level shift units is formed afterwards；PMOS tube MP3Grid connection phase inverter A input terminal, PMOS tube MP4Grid
Connect the output end of phase inverter A, PMOS tube MP3Grid formed electrical level shift units control terminal；NMOS tube MN3Grid connect
NMOS tube MN4Drain electrode, NMOS tube MN4Grid meet NMOS tube MN3Drain electrode, PMOS tube MP4Drain electrode form level shift list
The output end of member.The V in electrical level shift unitsDDIt is positive voltage, the output V of negative pressure generation unitSSAs level shift list
The negative supply voltage of member, VCTRIt is input control signal, VGSignal is controlled for output.MN3And MN4Constitute stable cross-coupling lock
Storage.Work as VCTRWhen being high, phase inverter A output is low, MP3Cut-off, MP4Conducting, therefore VY2High potential, i.e. MN3Grid potential
Height, MN3 conducting, leads to VX2Current potential is low, i.e. MN4Grid potential is low, MN4Cut-off exports VGFor high level.Work as VCTRIt is low
When, phase inverter A output is height, MP3Conducting, MP4Cut-off, therefore VX2The grid potential of high potential, i.e. MN4 is high, and MN4 conducting is led
Cause VY2Current potential is low, i.e. MN3Grid potential is low, MN3Cut-off exports VGFor low level.
The above-mentioned radio frequency rectification unit that breaking can turn off includes four rectification metal-oxide-semiconductors, two commutation capacitors, a switch controls
Pipe SW and a filter capacitor.Whether switching tube SW control rectification unit works, and rectifies metal-oxide-semiconductor for AC signal and is converted to direct current
Output, filter capacitor filter out ripple.In the present embodiment, radio frequency rectification unit can breaking be turned off by NMOS tube MN5、MN6、PMOS
Pipe MP5、MP6, switch control pipe SW and capacitor C4-C6It constitutes；The size of all NMOS tubes is 3.6 μm/0.18 μm, all PMOS
Size be 18 μm/0.18 μm, all capacitor's capacities are 1.13pF, and the size of switch control pipe is 3.6 μm/0.18 μm, are
NMOS tube.NMOS tube MN5Drain electrode, PMOS tube MP5Drain electrode, NMOS tube MN6Grid, PMOS tube MP6Grid and capacitor C4
Bottom crown be connected, capacitor C4Top crown formed can open circuit shutdown radio frequency rectification unit Differential Input anode；NMOS tube MN6
Drain electrode, PMOS tube MP6Drain electrode, NMOS tube MN5Grid, PMOS tube MP5Grid and capacitor C5Top crown be connected, electricity
Hold C5Bottom crown formed can open circuit shutdown radio frequency rectification unit Differential Input negative terminal；NMOS tube MN5Source electrode, NMOS tube MN6
Source electrode be connected with the source electrode of switch control pipe SW；The grounded drain of switch control pipe SW；The grid of switch control pipe SW is formed
It can the breaking input terminal for turning off radio frequency rectification unit；PMOS tube MP5Source electrode, PMOS tube MP6Source electrode and capacitor C6Top crown
After being connected, being formed can the breaking output end for turning off radio frequency rectification unit；Capacitor C6Bottom crown ground connection.
It breaking can turn off in radio frequency rectification unit, as the enable signal V being added on SWGWhen effective for high potential, SW is led
Logical, radio frequency rectification unit is in enabled working condition, MN5And MN6Source potential be equal to GND terminal potential.When RF+ terminal potential is
When positive value, VX3It also is positive value, since signal is Differential Input, the end RF- is negative value, VY3It also is negative value, at this point, MN6And MP5It leads
It is logical, MN5And MP6Cut-off.One side electric current flows through SW and MN from the end GND6To C5Charging, another aspect C4On charge pass through MP5
It discharges to output；When RF+ terminal potential is negative value, VX3It also is negative value, since signal is Differential Input, the end RF- is positive value, VY3
It also is positive value, at this point, MN5And MP6Conducting, MN6And MP5Cut-off.One side electric current flows through SW and MN from the end GND5To C4Charging, separately
One side C5On charge pass through MP6To load discharge.Output end C6It plays a filtering role, rectifier realizes that exchange turns direct current function.
As the enable signal V being added on SW gridGWhen for low level, SW cut-off, radio frequency rectification unit is in an off state, when the end RF+
When current potential is positive value, VX3It also is positive value, since signal is Differential Input, the end RF- is negative value, VY3It also is negative value, at this point, MN6With
MP5Conducting, MN5And MP6Cut-off, MN6Middle no current, C5Do not complete charging process.When RF+ terminal potential is negative value, VX3Also it is
Negative value, since signal is Differential Input, the end RF- is positive value, VY3It also is positive value, at this point, MN5And MP6Conducting, MN6And MP5Cut-off,
MN5Middle no current, C4Do not complete charging process；In one cycle, C4And C5All without completing charging process, just can not yet
It discharges to output, rectifier stops working.Due to controlling the low level signal V of SWGFor negative voltage VSS, SW can turn off thoroughly therefore be had
There is lower turn-off power loss.
The utility model realizes shutdown control using breaking method, and shutdown power consumption is mainly derived from leakage when shutdown pipe cut-off
Electrical power consumed.Since power consumption is far smaller than connected in the electricity leakage power dissipation of control pipe, P can be greatly lowered in breaking methodOFF.And it adopts
Shutdown control is carried out to control pipe with negative voltage, the electricity leakage power dissipation for controlling pipe can be made to further decrease, P can be further decreasedOFF,
Improve PCE.The utility model PCE with higher in enabled state has lower P in off stateOFF, circuit knot
Structure is simple, and design is easy, and chip area is small, reduces production cost.
It should be noted that although the above embodiment described in the utility model be it is illustrative, this is not to this
The limitation of utility model, therefore the utility model is not limited in above-mentioned specific embodiment.The utility model is not being departed from
In the case where principle, the other embodiment that all those skilled in the art obtain under the enlightenment of the utility model is accordingly to be regarded as
Within the protection of the utility model.
Claims (5)
1. a kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier, characterized in that including negative pressure generation unit, electrical level shift units
With can open circuit shutdown radio frequency rectification unit；Negative pressure generation unit and can open circuit shutdown radio frequency rectification unit Differential Input just terminate
Positive radiofrequency signal RF+；Negative pressure generation unit and can open circuit shutdown radio frequency rectification unit Differential Input negative terminal connect negative radiofrequency signal
RF-；The power supply pole of electrical level shift units meets power supply VDD, the control termination control signal V of electrical level shift unitsCTR；Negative pressure generates single
The input terminal of the output connection electrical level shift units of member；The output of electrical level shift units, which connects, breaking can turn off radio frequency rectification unit
Input terminal；It can output end of the breaking output end for turning off radio frequency rectification unit as entire rectifier.
2. a kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier according to claim 1, characterized in that negative pressure generates single
Member is by NMOS tube MN1、MN2, PMOS tube MP1、MP2With capacitor C1-C3It constitutes；
NMOS tube MN1Drain electrode, PMOS tube MP1Drain electrode, NMOS tube MN2Grid, PMOS tube MP2Grid and capacitor C1Under
Pole plate is connected, capacitor C1Top crown formed negative pressure generation unit Differential Input anode；
NMOS tube MN2Drain electrode, PMOS tube MP2Drain electrode, NMOS tube MN1Grid, PMOS tube MP1Grid and capacitor C2It is upper
Pole plate is connected, capacitor C2Bottom crown formed negative pressure generation unit Differential Input negative terminal；
NMOS tube MN1Source electrode and NMOS tube MN2Source electrode and capacitor C3Top crown be connected after, form negative pressure generation unit
Output end；Capacitor C3Bottom crown, PMOS tube MP1Source electrode and PMOS tube MP2Source electrode ground connection.
3. a kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier according to claim 1, characterized in that level shift list
Member is by NMOS tube MN3、MN4, PMOS tube MP3、MP4It is constituted with phase inverter A；
PMOS tube MP3Source electrode and PMOS tube MP4Source electrode be connected after formed electrical level shift units power supply pole；NMOS tube MN3's
Source electrode and NMOS tube MN4Source electrode after formed electrical level shift units input terminal；
PMOS tube MP3Grid connection phase inverter A input terminal, PMOS tube MP4Grid connection phase inverter A output end, PMOS
Pipe MP3Grid formed electrical level shift units control terminal；
NMOS tube MN3Grid meet NMOS tube MN4Drain electrode, NMOS tube MN4Grid meet NMOS tube MN3Drain electrode, PMOS tube MP4
Drain electrode form the output ends of electrical level shift units.
4. a kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier according to claim 1, characterized in that breaking can turn off
Radio frequency rectification unit is by NMOS tube MN5、MN6, PMOS tube MP5、MP6, switch control pipe SW and capacitor C4-C6It constitutes；
NMOS tube MN5Drain electrode, PMOS tube MP5Drain electrode, NMOS tube MN6Grid, PMOS tube MP6Grid and capacitor C4Under
Pole plate is connected, capacitor C4Top crown formed can open circuit shutdown radio frequency rectification unit Differential Input anode；
NMOS tube MN6Drain electrode, PMOS tube MP6Drain electrode, NMOS tube MN5Grid, PMOS tube MP5Grid and capacitor C5It is upper
Pole plate is connected, capacitor C5Bottom crown formed can open circuit shutdown radio frequency rectification unit Differential Input negative terminal；
NMOS tube MN5Source electrode, NMOS tube MN6Source electrode be connected with the source electrode of switch control pipe SW；The drain electrode of switch control pipe SW
Ground connection；The grid of switch control pipe SW is formed can the breaking input terminal for turning off radio frequency rectification unit；
PMOS tube MP5Source electrode, PMOS tube MP6Source electrode and capacitor C6Top crown be connected after, formation can open circuit shutdown radio frequency it is whole
Flow the output end of unit；Capacitor C6Bottom crown ground connection.
5. a kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier according to claim 4, characterized in that switch control pipe
SW is NMOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821544135.4U CN208754200U (en) | 2018-09-20 | 2018-09-20 | A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821544135.4U CN208754200U (en) | 2018-09-20 | 2018-09-20 | A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208754200U true CN208754200U (en) | 2019-04-16 |
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ID=66084802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821544135.4U Withdrawn - After Issue CN208754200U (en) | 2018-09-20 | 2018-09-20 | A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier |
Country Status (1)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964486A (en) * | 2018-09-20 | 2018-12-07 | 桂林电子科技大学 | A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier |
-
2018
- 2018-09-20 CN CN201821544135.4U patent/CN208754200U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964486A (en) * | 2018-09-20 | 2018-12-07 | 桂林电子科技大学 | A kind of negative pressure open circuit turn-off type CMOS radio frequency rectifier |
| CN108964486B (en) * | 2018-09-20 | 2024-02-06 | 桂林电子科技大学 | Negative-pressure circuit-breaking turn-off type CMOS radio frequency rectifier |
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|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Nanning Taisu Semiconductor Co.,Ltd. Assignor: GUILIN University OF ELECTRONIC TECHNOLOGY Contract record no.: X2022450000523 Denomination of utility model: A CMOS RF Rectifier with Negative Pressure Circuit Breaker Granted publication date: 20190416 License type: Common License Record date: 20221229 |
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| EE01 | Entry into force of recordation of patent licensing contract | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20190416 Effective date of abandoning: 20240206 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20190416 Effective date of abandoning: 20240206 |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |