CN208738272U - A kind of photovoltaic integrated chip encapsulating structure - Google Patents
A kind of photovoltaic integrated chip encapsulating structure Download PDFInfo
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- CN208738272U CN208738272U CN201821266731.0U CN201821266731U CN208738272U CN 208738272 U CN208738272 U CN 208738272U CN 201821266731 U CN201821266731 U CN 201821266731U CN 208738272 U CN208738272 U CN 208738272U
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- photovoltaic
- layer
- bypass diode
- encapsulating structure
- integrated chip
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a kind of photovoltaic integrated chip encapsulating structures, including photovoltaic chip layer, bypass diode, support construction and glassy layer；It is pasted with the bypass diode in photovoltaic chip layer upper surface, is additionally provided with support construction in photovoltaic chip layer upper surface, the thickness of the support construction is greater than the height of the bypass diode, and the glassy layer is arranged in the support construction.The photovoltaic integrated chip encapsulating structure of the utility model can effective protection bypass diode and photovoltaic chip not by the compressing of glassy layer, improve the stability of photovoltaic module, and structure is simple, significant effect, low production cost.
Description
Technical field
The utility model relates to technical field of photovoltaic modules, particularly relate to a kind of photovoltaic integrated chip encapsulating structure.
Background technique
Photovoltaic module bring hot spot effect, the flexible solar integrated chip of U.S. GSE are given in order to solve occlusion issue
Using bypass diode technology, effective solution hot spot effect problem.Regrettably a problem is also brought in this way: bypass
Although diode is sticking-element, still have certain volume (such as long x high: 1.2mm × 0.8mm of x wide × 0.6mm), meeting
It is higher by the plane of integrated chip (chip thickness is about 1mm), that is, bypass diode is in equal relative to the surface of integrated chip
Even spot distribution, it is therefore highly preferred that using thin-film package.
However, have many schemes that the integrated chip with bypass diode is needed to carry out tempered glass encapsulation in practical application,
Such as automobile photovoltaic glass roof (panoramic skylight or common skylight), photovoltaic road etc..Since tempered glass is one complete flat
Face/cambered surface, in stress, bypass diode can bear very big pressure, be easily damaged the sun that bypass diode is contacted with it
It can thin film chip.
Utility model content
In view of this, the purpose of this utility model is that propose a kind of photovoltaic integrated chip encapsulating structure, it is other in stress
Road diode and the chip contacted with it are not damaged.
Based on a kind of above-mentioned purpose photovoltaic integrated chip encapsulating structure provided by the utility model comprising photovoltaic chip
Layer, bypass diode, support construction and glassy layer；It is pasted with the bypass diode in photovoltaic chip layer upper surface,
Photovoltaic chip layer upper surface is additionally provided with support construction, and the thickness of the support construction is greater than the height of the bypass diode
Degree, the glassy layer are arranged in the support construction.
Further, the support construction is supporting block.
Further, the support construction is supporting layer, and the supporting layer is covered in the photovoltaic chip layer, described
The through-hole that can accommodate the bypass diode is provided on supporting layer.
Further, the diameter of the through-hole is more than or equal to 6mm.
Further, the thickness of the supporting layer is more than or equal to 1.5mm.
Further, each bypass diode is contained in a corresponding through-hole.
Further, sealant is filled in the through-hole.
Further, sealant is provided on the periphery of the photovoltaic chip layer, the supporting layer and the glassy layer
The edge sealing of composition.
Further, bottom is additionally provided on the lower surface of the photovoltaic chip layer.
Further, the edge sealing of sealant composition is provided in the periphery of the bottom.
From the above it can be seen that a kind of photovoltaic integrated chip encapsulating structure provided by the utility model passes through in photovoltaic
Support construction is set in chip layer, plays the role of supporting glassy layer, provides space from the pressure of glassy layer to bypass diode
Power reduces the destruction to photovoltaic chip layer.The utility model also provide the structural support be supporting layer scheme, by supporting layer
On be provided with the mode that can accommodate the through-hole of bypass diode, shelter oneself space to bypass diode offer, eliminate a point stress, build
Facade stress makes bypass diode from the direct compressing from glassy layer, reaches protection bypass diode and photovoltaic chip
Effect；Further, in through-holes, filling with sealant on bypass diode improves the company of bypass diode and photovoltaic chip layer
Intensity is connect, the probability that bypass diode falls off by vibration is reduced, improves the stability of photovoltaic module.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of photovoltaic integrated chip package structure diagram provided by the embodiment of the utility model；
Fig. 2 is that a kind of supporting layer structure of photovoltaic integrated chip encapsulating structure provided by the embodiment of the utility model is overlooked
Figure；
Fig. 3 is a kind of photovoltaic integrated chip encapsulating structure partial enlarged view provided by the embodiment of the utility model；
Fig. 4 is another photovoltaic integrated chip package structure diagram provided by the embodiment of the utility model.
Wherein, 1- photovoltaic chip layer, 2- bypass diode, 3- supporting layer, 4- through-hole, 5- glassy layer, 6- edge sealing, the bottom 7-
Layer.
Specific embodiment
For the purpose of this utility model, technical solution and advantage is more clearly understood, below in conjunction with specific embodiment, and
Referring to attached drawing, the utility model is further described.
It is as shown in figures 1 and 3 a kind of photovoltaic integrated chip package structure diagram provided by the utility model, including light
Lie prostrate chip layer 1, bypass diode 2, support construction and glassy layer 5；It is pasted with bypass diode 2 in 1 upper surface of photovoltaic chip layer,
It is additionally provided with support construction in 1 upper surface of photovoltaic chip layer, the thickness of the support construction is greater than the height of bypass diode 2,
The glassy layer 5 is arranged in the support construction.By the way that support construction is arranged in photovoltaic chip layer, support glassy layer is played
Effect, to bypass diode provide space from glassy layer pressure.
In some embodiments of the utility model, support construction is supporting block.The quantity of supporting block is optionally one
Or it is multiple,
In some embodiments of the utility model, support construction is supporting layer 3, and supporting layer 3 is covered on photovoltaic chip layer 1
On, the through-hole 4 that can accommodate bypass diode 2 is provided on supporting layer 3, glassy layer 5 is covered on supporting layer 3.It is such
Encapsulating structure eliminates a point stress, face stress is established, when glassy layer 5 is under pressure by providing space of sheltering oneself to bypass diode 2
When, the whole stress of supporting layer 3, bypass diode 2 reaches protection 2 He of bypass diode from the direct compressing from glassy layer 5
The effect of photovoltaic chip layer 1 reduces the risk of local lesion.When sunlight irradiation, the periphery of supporting block, 3 through-hole of supporting layer
Inner wall will affect the injection efficiency of sunlight, therefore the influence that periphery, the smaller injection to sunlight of inner wall area generate is smaller, at this time
Supporting layer 3 to the compressing of photovoltaic chip layer 1 will far smaller than supporting block, supporting layer 3 to the protecting effect of photovoltaic chip layer 1 more
It is excellent.
3 top view of supporting layer being illustrated in figure 2 in some embodiments of the utility model, supporting layer 3 is according to bypass two
The distributed dimension of pole pipe 2 is correspondingly arranged through-hole 4, i.e., each bypass diode 2 is contained in a corresponding through-hole 4.Into
One step, etching can be used in through-hole 4 or mechanical system is processed into, and can also be integrally formed with supporting layer.
In some embodiments of the utility model, it is filled with sealant in through-hole 4, effectively prevent bypass diode 2
It falls off from photovoltaic chip layer 1, improves the stability of photovoltaic module.
In some embodiments of the utility model, the diameter of through-hole 4 is more than or equal to 6mm, and cylindrical hole has difficult processing
Spend small, timesaving advantage.In some embodiments of the utility model, the thickness of supporting layer 3 is more than or equal to 1.5mm.Due to light
The power for lying prostrate component is different, and the forward conduction voltage and forward conduction electric current of bypass diode 2 are also different, it means that bypass two
The size of pole pipe 2 has differences, 2 maximum machine of bypass diode that may be used at present having a size of 3.4mm × 1.7mm ×
0.95mm.Through-hole of the diameter more than or equal to 6mm, which is arranged, can adapt to the size of most of bypass diode that may be used, even if
Consider that bypass diode 2 and 1 connection welding occupied space of photovoltaic chip layer and bypass diode 2 are laid out tolerance, being also able to satisfy needs
It asks.Similar, the thickness of setting supporting layer 3, which is more than or equal to 1.5mm, can adapt to most of two pole of bypass that may be used
The size of pipe is also able to satisfy demand even if considering filling with sealant and intrinsic tolerance on bypass diode 2.
In some embodiments of the utility model, supporting layer 3 is in tempered glass, float glass and wire glass
It is at least one.
In some embodiments of the utility model, it is arranged on the periphery of photovoltaic chip layer 1, supporting layer 3 and glassy layer 5
The edge sealing 6 for thering is sealant to constitute；Photovoltaic chip layer 1, supporting layer 3 and glassy layer 5 are combined integral and realize sealing by edge sealing 6,
Moisture is prevented to enter the performance on the inside of encapsulating structure and influencing photovoltaic module.
In some embodiments of the utility model, the material of edge sealing 6 is EVA sealant.
As shown in figure 4, photovoltaic integrated chip encapsulating structure is in photovoltaic chip layer in some embodiments of the utility model
It is additionally provided with bottom 7 on 1 lower surface, supports photovoltaic chip layer 1 while protecting photovoltaic chip layer 1.Further, bottom 7
Periphery be also equipped with sealant composition edge sealing 6.Preferably, bottom 7 is in tempered glass, float glass and wire glass
At least one.
A kind of assembling of photovoltaic integrated chip encapsulating structure provided by the utility model:
Firstly, the one side that photovoltaic chip layer 1 is provided with bypass diode 2 is placed on upward on bottom 7；Secondly, will set
The supporting layer 3 for being equipped with through-hole 4 is covered in photovoltaic chip layer 1, so that bypass diode 2 is contained in just in through-hole 4；Again,
Into through-hole 4 remaining space be perfused sealant, glassy layer 5 is covered on supporting layer 3, finally bottom 7, photovoltaic chip layer 1,
Edge sealing 6 is arranged in the periphery of supporting layer 3 and glassy layer 5.
The step of sealant is perfused in through-hole 4 in some embodiments of the utility model, in step assembled above can
To omit.
In some embodiments of the utility model, bottom 7 be can be omitted in step assembled above.
A kind of photovoltaic integrated chip encapsulating structure provided by the utility model by the way that supporting layer is arranged in photovoltaic chip layer,
Supporting layer is equipped with the mode for accommodating the through-hole of bypass diode, provides space of sheltering oneself to bypass diode, eliminates a point stress, builds
Facade stress makes bypass diode from the direct compressing from glassy layer, reaches protection bypass diode and photovoltaic chip
Effect；Further, in through-holes, filling with sealant on bypass diode improves bypass diode and photovoltaic integrated chip
Bonding strength reduces the probability that bypass diode falls off by vibration, improves the stability of photovoltaic module.The knot of the utility model
Structure is simple, significant effect, low production cost.
It should be understood by those ordinary skilled in the art that: the discussion of any of the above embodiment is exemplary only, not
It is intended to imply that the scope of the present disclosure (including claim) is limited to these examples；Under the thinking of the utility model, the above reality
Applying can also be combined between the technical characteristic in example or different embodiments, and there are the utility model as described above
Many other variations of different aspect, for simplicity, they are not provided in details.Therefore, all spirit in the utility model
Within principle, any omission, modification, equivalent replacement, improvement for being made etc. should be included in the protection scope of the utility model
Within.
Claims (10)
1. a kind of photovoltaic integrated chip encapsulating structure, which is characterized in that it include photovoltaic chip layer (1), bypass diode (2),
Support construction and glassy layer (5) are pasted with the bypass diode (2) in photovoltaic chip layer (1) upper surface；In the light
Volt chip layer (1) upper surface is additionally provided with support construction, and the thickness of the support construction is greater than the height of the bypass diode (2)
Degree, the glassy layer (5) are arranged in the support construction.
2. photovoltaic integrated chip encapsulating structure according to claim 1, which is characterized in that the support construction is support
Block.
3. photovoltaic integrated chip encapsulating structure according to claim 1, which is characterized in that the support construction is supporting layer
(3), the supporting layer (3) is covered on the photovoltaic chip layer (1), and institute can be accommodated by being provided on the supporting layer (3)
State the through-hole (4) of bypass diode (2).
4. photovoltaic integrated chip encapsulating structure according to claim 3, which is characterized in that the diameter of the through-hole (4) is big
In equal to 6mm.
5. photovoltaic integrated chip encapsulating structure according to claim 3, which is characterized in that the thickness of the supporting layer (3)
More than or equal to 1.5mm.
6. photovoltaic integrated chip encapsulating structure according to claim 3, which is characterized in that each bypass diode (2)
It is all contained in a corresponding through-hole (4).
7. photovoltaic integrated chip encapsulating structure according to claim 3, which is characterized in that filled with close in the through-hole
Sealing.
8. photovoltaic integrated chip encapsulating structure according to claim 3, which is characterized in that the photovoltaic chip layer (1),
The edge sealing (6) of sealant composition is provided on the periphery of the supporting layer (3) and the glassy layer (5).
9. photovoltaic integrated chip encapsulating structure as claimed in any of claims 1 to 8, which is characterized in that it is in institute
It states and is additionally provided with bottom (7) on the lower surface of photovoltaic chip layer (1).
10. photovoltaic integrated chip encapsulating structure according to claim 9, which is characterized in that in the periphery of the bottom (7)
It is provided with the edge sealing (6) of sealant composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821266731.0U CN208738272U (en) | 2018-08-07 | 2018-08-07 | A kind of photovoltaic integrated chip encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821266731.0U CN208738272U (en) | 2018-08-07 | 2018-08-07 | A kind of photovoltaic integrated chip encapsulating structure |
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| Publication Number | Publication Date |
|---|---|
| CN208738272U true CN208738272U (en) | 2019-04-12 |
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ID=66028522
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821266731.0U Active CN208738272U (en) | 2018-08-07 | 2018-08-07 | A kind of photovoltaic integrated chip encapsulating structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN208738272U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110727148A (en) * | 2019-10-24 | 2020-01-24 | 深圳慧新辰技术有限公司 | Liquid crystal chip packaging structure, method, projection display and projection display system |
-
2018
- 2018-08-07 CN CN201821266731.0U patent/CN208738272U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110727148A (en) * | 2019-10-24 | 2020-01-24 | 深圳慧新辰技术有限公司 | Liquid crystal chip packaging structure, method, projection display and projection display system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 3001, room 6, building No. 7, Rongchang East Street, Beijing economic and Technological Development Zone, Beijing, Daxing District 100176, China Patentee after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 3001, room 6, building No. 7, Rongchang East Street, Beijing economic and Technological Development Zone, Beijing, Daxing District 100176, China Patentee before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210425 Address after: 201, room 518057, building A, No. 1, front Bay Road, Qianhai, Shenzhen Guangdong cooperation zone (Shenzhen Qianhai business secretary Co., Ltd.) Patentee after: Hongyi Technology Co.,Ltd. Address before: 3001, room 6, building No. 7, Rongchang East Street, Beijing economic and Technological Development Zone, Beijing, Daxing District 100176, China Patentee before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |