CN208723066U - A kind of micro-strip vertical transition structure - Google Patents
A kind of micro-strip vertical transition structure Download PDFInfo
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- CN208723066U CN208723066U CN201821549102.9U CN201821549102U CN208723066U CN 208723066 U CN208723066 U CN 208723066U CN 201821549102 U CN201821549102 U CN 201821549102U CN 208723066 U CN208723066 U CN 208723066U
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Abstract
The utility model discloses a kind of micro-strip vertical transition structures, it is characterised in that: including micro-strip section and waveguide segment；The micro-strip section includes two micro-strip plates, is inserted respectively into the waveguide segment of broadside center windowing；The waveguide segment, including waveguide cavity main body, and the waveguide cavity upper cover plate and waveguide cavity lower cover plate that are fastened respectively with waveguide cavity main body both ends；The micro-strip plate is separately positioned between waveguide cavity main body and waveguide cavity upper cover plate and between waveguide cavity main body and waveguide cavity lower cover plate.The utility model is used based on micro-strip-waveguide-micro-strip form, whole to have lower slotting people's loss, larger bandwidth of operation, and its is compact-sized, and easy to process, handling are easy；And it is easy the height of change waveguide, it can be adapted for more micro-strip vertical transition requirements.
Description
Technical field
The utility model relates to a kind of microwave and millimeter wave multilayer circuit, especially a kind of micro-strip vertical transition structure.
Background technique
Micro-strip vertical transition structure is the indispensable component in microwave and millimeter wave multilayer circuit.Nowadays various
Microwave&millimeter-wave IC is widely used in modern wireless systems and radar system.With to small form factor requirements increasingly
Height, microwave and millimeter wave multilayer circuit are also increasingly widely used.
Conventional micro strip line-microstrip line transient mode has: realizing the transition of upper and lower level microstrip line based on metal throuth hole；Based on slot coupling
It closes and realizes the transition of upper and lower level microstrip line；Micro-strip vertical transition based on cavity coupling；Micro-strip vertically passing based on glass insulator
Degree；Wherein, the vertical microstrip transition based on metal throuth hole has broadband character, but when frequency is excessively high, metal throuth hole have compared with
Serious ghost effect, to deteriorate system performance；And the micro-strip vertical transition structure based on slot coupling and cavity coupling, do not have
There is broadband character, and processes complicated；Based on glass insulator when frequency it is excessively high, equally have more serious ghost effect.
Utility model content
The goal of the invention of the utility model is: in view of the above problems, providing a kind of microstrip line vertical transition knot
Structure solves the processing complexity that micro-strip vertical velocity is faced, and adaptability is weak, and ghost effect is serious when opposite band width and high frequency
The problem of.
The technical solution adopted in the utility model is as follows:
A kind of micro-strip vertical transition structure of the utility model, including micro-strip section and waveguide segment；The micro-strip section includes two
Micro-strip plate is inserted respectively into the waveguide segment of broadside center windowing；The waveguide segment, including waveguide cavity main body, and and waveguide
The waveguide cavity upper cover plate and waveguide cavity lower cover plate that cavity main body both ends fasten respectively.
The above structure installs two micro-strip plates in waveguide, realizes micro-strip by waveguide with existing microstrip line transitional face ratio
Transition between plate can obtain broader relative bandwidth.
Preferably, the micro-strip plate is separately positioned between waveguide cavity main body and waveguide cavity upper cover plate and waveguide cavity
Between main body and waveguide cavity lower cover plate.
The above structure, due to micro-strip plate setting exist, waveguide cavity main body respectively with waveguide cavity upper cover plate and waveguide cavity lower cover plate
Between, it is convenient to the adjustment of distance between micro-strip and waveguide cavity cover board；It is convenient to waveguide and the disassembly of micro-strip plate and replacement simultaneously.
Preferably, the micro-strip plate includes microstrip dielectric substrate, and it is set to the micro-strip of microstrip dielectric substrate top layer
Line.
Preferably, the microstrip dielectric substrate is tetra- laminate of PCB, waveguide cross-section is covered, top layer is etched with microstrip line,
Tetra- laminate of PCB and the copper of waveguide joint hollow out.
The above structure has copper that can reflect signal because signal will be passed through from pcb board, so for the transmission of signal,
The place that tetra- laminate of PCB connects with waveguide needs copper to hollow out.
Preferably, the microstrip line includes sequentially connected probe, perceptual high impedance line and ohm line.
The above structure, since probe transitions have condensance, so one section of high impedance line with inductive reactance of load,
It is connected on behind probe transition, condensance can be eliminated.
Preferably, the probe is the face E probe.
Preferably, the waveguide cavity main body is nonstandard Quasi-Waveguide.
The above structure can reduce the face of rectangular waveguide in the case where not influencing performance due to using nonstandard Quasi-Waveguide
Product.
Preferably, probe face is transmission on the waveguide cavity upper cover plate and the micro-strip plate of waveguide cavity lower cover plate distance insertion
The a quarter of the waveguide wavelength of signal center frequency.
The setting in the distance between probe face on the above structure, waveguide cavity upper cover plate and waveguide cavity lower cover plate and micro-strip plate,
It can guarantee at microstrip probe to be waveguide electric field the most strength, convenient for the coupling of signal.
Preferably, being respectively equipped with T-slot in the waveguide cavity upper cover plate and waveguide cavity lower cover plate, T-slot corresponds to micro-strip
Microstrip line on medium substrate.
The above structure forms an air chamber, air chamber since T-slot is arranged between microstrip line and transmission waveguide mouth
Height it is related to performance, by the way that the T-slot of certain depth is arranged on the cover board, determine the height of air chamber, guarantee vertically passing
Cross the performance of structure.
Preferably, it is respectively equipped with screw hole in the waveguide cavity upper cover plate, waveguide cavity lower cover plate and microstrip dielectric substrate,
Screw is equipped in screw hole, screw fixes waveguide cavity upper cover plate, waveguide cavity lower cover plate and microstrip dielectric substrate.
The setting of the above structure, screw and screw hole can convenient for waveguide cavity upper cover plate and waveguide cavity lower cover plate disassembly and
Installation, it is easy to use.
In conclusion by adopting the above-described technical solution, the beneficial effects of the utility model are: with prior art phase
Than the utility model micro-strip vertical transition structure realizes the transition between microstrip line using waveguide, overcomes existing microstrip line-
The defect of microstrip line transition has than wider relative bandwidth and lower insertion loss, when high frequency, can effectively reduce parasitic effect
It answers；The setting of waveguide cavity upper cover plate, waveguide cavity lower cover plate and waveguide cavity main body simultaneously, keeps micro-strip vertical transition structure compact, easily
In processing, handling are easy；And by the height of change waveguide and the length on waveguide mouth width side, narrow side, can preferably expire
Requirement of the sufficient vertical transition to height and transmission band.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of micro-strip vertical transition structure of the present invention.
Fig. 2 is the structural schematic diagram of waveguide segment.
Fig. 3 is the structural schematic diagram of micro-strip section.
Fig. 4 is the structural schematic diagram of the micro-strip vertical transition structure of embodiment.
Fig. 5 is the structural schematic diagram of embodiment waveguide cavity main body and micro-strip plate.
Fig. 6 is the structural schematic diagram of waveguide cavity upper cover plate.
Fig. 7 is the structural schematic diagram of waveguide cavity lower cover plate.
Fig. 8 is the simulation result S parameter figure of micro-strip vertical transition structure.
Fig. 9 is the measured result S parameter figure of micro-strip vertical transition structure.
Specific embodiment
With reference to the accompanying drawing, the utility model is described in detail.
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only to explain this
Utility model is not used to limit the utility model.
Embodiment one:
Such as Fig. 1, a kind of micro-strip vertical transition structure of the present invention, including micro-strip section and waveguide segment 2；The micro-strip section includes two
A micro-strip plate 1 is inserted respectively into the waveguide segment 2 of broadside center windowing.
Such as Fig. 2, the waveguide segment 2, including waveguide cavity main body 21, and the wave fastened respectively with 21 both ends of waveguide cavity main body
Guide cavity upper cover plate 22 and waveguide cavity lower cover plate 23；The waveguide cavity main body 21 respectively with waveguide cavity upper cover plate 22 and waveguide cavity lower cover
Micro-strip plate 2 is equipped between plate 23.
Such as Fig. 3, the micro-strip plate 1 includes microstrip dielectric substrate 11, and is set to the micro- of 11 top layer of microstrip dielectric substrate
Band line 12；The microstrip dielectric substrate 11 is tetra- laminate of PCB, and top layer is etched to microstrip line 12, tetra- laminate of PCB and waveguide linking part
The copper divided hollows out；
The microstrip line 12 includes sequentially connected probe 121, perceptual high impedance line 122 and 50 ohm lines 123；The spy
Needle 121 is the face E probe.
In embodiment, probe on the micro-strip plate 1 of the waveguide cavity upper cover plate 22 and waveguide cavity lower cover plate 23 apart from insertion
Face is a quarter for transmitting the waveguide wavelength of signal center frequency.
Embodiment two:
Such as Fig. 4, the present embodiment discloses a kind of micro-strip vertical transition structure, the waveguide that 21 both ends of waveguide cavity main body fasten respectively
Chamber upper cover plate 22 and waveguide cavity lower cover plate 23, waveguide cavity main body 21 respectively with 22 plate of waveguide cavity upper cover and waveguide cavity lower cover plate 23
Between cross section on microstrip dielectric substrate 11 is installed, microstrip dielectric substrate 11 is equipped with microstrip line 12, on microstrip line 12 point
It Lian Jie not input adapter and out splice going splice；And screw hole 222 is passed through for waveguide cavity upper cover plate 22, waveguide cavity lower cover plate by screw
23 and microstrip dielectric substrate 11 it is fixed.
Such as Fig. 5, it is respectively arranged with microstrip dielectric substrate 11 at 21 both ends of waveguide cavity main body, microstrip dielectric substrate 11 covers wave
21 cross section of guide cavity main body, 11 top layer of microstrip dielectric substrate are equipped with T-shaped structure 112, remove microstrip line 12 in T-shaped structure 112,
The layers of copper of remaining part point hollows out；Screw hole 222 is additionally provided in microstrip dielectric substrate 11；Rectangular waveguide letter is provided in T-shaped structure 112
Number hop, probe 121, perceptual high impedance line 122 and 50 ohm lines 123.
Such as Fig. 6 and 7, T-slot 221, T-slot are respectively equipped in the waveguide cavity upper cover plate 22 and waveguide cavity lower cover plate 23
Microstrip line 12 in 221 corresponding microstrip dielectric substrates 11；It is set respectively on the waveguide cavity upper cover plate 22 and waveguide cavity lower cover plate 23
There is screw hole 222.
If Fig. 8 is inserted into from the point of view of emulating S parameter figure in 9-14G, loss is less than 0.5dB, and return loss is less than -14dB；
And when underfrequency, greater than waveguide cutoff wavelength when, waveguide can generate inhibition to it, as shown, transition structure pair
6GHz has the inhibition of 30dB.
Such as Fig. 9, it can be seen that passband and the result of emulation are relatively coincide from actual measurement S parameter figure；Actual measurement is inserted with emulation
Enter the difference between loss and return loss, is as caused by having influence of the connector there are also assembling process, is normal.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (10)
1. a kind of micro-strip vertical transition structure, it is characterised in that: including micro-strip section and waveguide segment (2)；The micro-strip section includes two
A micro-strip plate (1) is inserted respectively into the waveguide segment (2) of broadside center windowing；The waveguide segment (2), including waveguide cavity main body
(21), the waveguide cavity upper cover plate (22) and waveguide cavity lower cover plate (23) and with waveguide cavity main body (21) both ends fastened respectively.
2. micro-strip vertical transition structure as described in claim 1, it is characterised in that: the micro-strip plate (1) is separately positioned on wave
Between guide cavity main body (21) and waveguide cavity upper cover plate (22) and between waveguide cavity main body (21) and waveguide cavity lower cover plate (23).
3. micro-strip vertical transition structure as claimed in claim 1 or 2, it is characterised in that: the micro-strip plate (1) includes that micro-strip is situated between
Matter substrate (11), and it is set to the microstrip line (12) of microstrip dielectric substrate (11) top layer.
4. micro-strip vertical transition structure as claimed in claim 3, it is characterised in that: the microstrip dielectric substrate (11) is PCB
Four laminates cover waveguide cavity body cross-section, and top layer is etched with microstrip line (12), and the copper of tetra- laminate of PCB and waveguide joint is dug
It is empty.
5. micro-strip vertical transition structure as claimed in claim 3, it is characterised in that: the microstrip line (12) includes being sequentially connected
Probe (121), perceptual high impedance line (122) and ohm line (123).
6. micro-strip vertical transition structure as claimed in claim 5, it is characterised in that: the probe (121) is the face E probe.
7. micro-strip vertical transition structure as described in claim 1, it is characterised in that: the waveguide cavity main body (21) is non-standard
Waveguide.
8. micro-strip vertical transition structure as described in claim 1, it is characterised in that: the waveguide cavity upper cover plate (22) and waveguide
Chamber lower cover plate (23) distance insertion micro-strip plate (1) on probe face be transmission signal center frequency waveguide wavelength four/
One.
9. micro-strip vertical transition structure as claimed in claim 1 or 8, it is characterised in that: the waveguide cavity upper cover plate (22) and
It is respectively equipped with T-slot (221) in waveguide cavity lower cover plate (23), the microstrip line on T-slot (221) corresponding microstrip dielectric substrate (11)
(12).
10. micro-strip vertical transition structure as claimed in claim 9, it is characterised in that: the waveguide cavity upper cover plate (22), waveguide
It is respectively equipped with screw hole (222) in chamber lower cover plate (23) and microstrip dielectric substrate (11), screw, spiral shell is equipped in screw hole (222)
Silk is fixed by waveguide cavity upper cover plate (22), waveguide cavity lower cover plate (23) and microstrip dielectric substrate (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821549102.9U CN208723066U (en) | 2018-09-21 | 2018-09-21 | A kind of micro-strip vertical transition structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821549102.9U CN208723066U (en) | 2018-09-21 | 2018-09-21 | A kind of micro-strip vertical transition structure |
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| CN208723066U true CN208723066U (en) | 2019-04-09 |
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| CN201821549102.9U Active CN208723066U (en) | 2018-09-21 | 2018-09-21 | A kind of micro-strip vertical transition structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216847A (en) * | 2018-09-21 | 2019-01-15 | 成都博芯联科科技有限公司 | A kind of micro-strip vertical transition structure |
| CN110707405A (en) * | 2019-09-06 | 2020-01-17 | 中国电子科技集团公司第十三研究所 | Microstrip line vertical transition structure and microwave device |
| CN110707406A (en) * | 2019-09-06 | 2020-01-17 | 中国电子科技集团公司第十三研究所 | Microstrip line vertical transition structure and microwave device |
| CN112072250A (en) * | 2020-08-27 | 2020-12-11 | 中电科仪器仪表有限公司 | Terahertz waveguide-coaxial conversion structure based on waveguide narrow-wall crank arm coaxial probe |
-
2018
- 2018-09-21 CN CN201821549102.9U patent/CN208723066U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216847A (en) * | 2018-09-21 | 2019-01-15 | 成都博芯联科科技有限公司 | A kind of micro-strip vertical transition structure |
| CN110707405A (en) * | 2019-09-06 | 2020-01-17 | 中国电子科技集团公司第十三研究所 | Microstrip line vertical transition structure and microwave device |
| CN110707406A (en) * | 2019-09-06 | 2020-01-17 | 中国电子科技集团公司第十三研究所 | Microstrip line vertical transition structure and microwave device |
| CN110707405B (en) * | 2019-09-06 | 2021-09-21 | 中国电子科技集团公司第十三研究所 | Microstrip line vertical transition structure and microwave device |
| CN110707406B (en) * | 2019-09-06 | 2021-10-01 | 中国电子科技集团公司第十三研究所 | Microstrip line vertical transition structure and microwave device |
| CN112072250A (en) * | 2020-08-27 | 2020-12-11 | 中电科仪器仪表有限公司 | Terahertz waveguide-coaxial conversion structure based on waveguide narrow-wall crank arm coaxial probe |
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