CN208706575U - Semiconductor processing - Google Patents

Abstract

The utility model discloses a kind of semiconductor processing comprising: cavity, including inner cavity, the inner cavity have side wall and roof；First runner is located at outside the side wall, and the first runner also has venthole；Multiple gas vents are located on the side wall, for being connected to the inner cavity and the first runner；And air inlet is connected to the inner cavity positioned at the middle part of the roof；Article carrying platform, setting is in the cavity；Wherein, multiple gas vents are arranged along the first runner, and with the growth of the distance of the gas vent to the venthole, the aperture of the gas vent has the trend increased.Film is made of this semiconductor processing, then the direction of the local stress of film tends to away from the center of circle of silicon wafer on silicon wafer.

Description

Semiconductor processing

Technical field

The utility model relates generally to a kind of field of semiconductor processing, in particular to a kind of semiconductor machining Device.

Background technique

In semi-conductor industry now, hard mask mainly applies in multiple photoetching process, first multiple photoresist Image is transferred in hard mask, and then final graphics etching is transferred on substrate by hard mask.

For the more and more narrow demand of reply integrated circuit critical dimension, need to manufacture the figure of higher resolution, photoresist Thickness must be reduced accordingly to increase the accuracy of pattern transfer.Therefore, we, which need one, has the material of high selectivity ratio to work as Hard mask reduces the thickness of photoresist, especially applies the pattern under the high-aspect-ratio in 70 nanometers or less advanced technologies to turn It moves.

Silicon nitride in the prior art, fire sand, amorphous silicon, the films such as C film all can be used as hard mask.But the bottom of for For the silicon oxide film of material silicon oxide film or doping boron, phosphorus or fluorine, the manufacturing cost of C film is low, therefore C film is normal Photoresist pattern transfer layer or hard mask layer for high-aspect-ratio.

But in the narrower high density graph shifting process of line width, the conditions of exposure of photoresist more becomes harsh.For future Matching degree between technique C film and photoresist can also become the important key of photoresist exposure success or not.

With the more and more narrow requirement of integrated circuit critical dimension, in order to manufacture the figure of higher resolution, to hard mask Requirement also can be higher and higher；C film is used as the sacrificial layer of image transfer, the office of film as a kind of hard mask Portion's stress uniformity has very big influence to the transfer of image.But the part for depositing the film thickness of obtained C film at present is answered Power uniformity cannot control well, and especially local stress directional spreding is irregular.As shown in Figure 1, first will be on silicon wafer C film is evenly dividing into 16 areas；As shown in Fig. 2, the part in 16 regions on the C film that the prior art is made The direction of stress is generally distributed irregularly.

The C film that different C film reaction chambers are deposited, can because caused by future technique each silicon wafer place in box multiplying to carry Rotation angle be not quite similar, and board itself pass piece mechanism will also result in a degree of rotation of silicon wafer, cause every silicon Local stress distribution of the piece after depositing C film is not quite similar.And existing litho machine can only be according to a kind of local stress direction Distribution map is exposed adjustment, if every local stress directional spreding is irregular, will affect exposure results and even exposes It is failure.

Above- mentioned information are only used for reinforcing the understanding to the background of the utility model disclosed in the background technology part, because This it may include the information not constituted to the prior art known to persons of ordinary skill in the art.

Utility model content

A series of concept of reduced forms is introduced in utility model content part, this will be in specific embodiment part Middle further description.The content of the present invention part is not meant to attempt to limit technical solution claimed Key feature and essential features, do not mean that the protection scope for attempting to determine technical solution claimed more.

A technical problem to be solved in the utility model is how to make the local stress of the film generated on silicon wafer Direction deviate from the center of circle.

One main purpose of the utility model is to overcome at least one defect of the above-mentioned prior art, provides a kind of half Conductor processing unit (plant) comprising:

Cavity, including

Inner cavity, the inner cavity have side wall and roof；

First runner is located at outside the side wall, and the first runner also has venthole；

Multiple gas vents are located on the side wall, for being connected to the inner cavity and the first runner；

And

Air inlet is connected to the inner cavity positioned at the middle part of the roof；

Article carrying platform, setting is in the cavity；

Wherein, multiple gas vents are arranged along the first runner, with the gas vent to the venthole The growth of distance, the aperture of the gas vent have the trend increased.

An embodiment according to the present utility model, the inner cavity are tubular, and the first runner is annular, and described Annular vertical is in the extending direction of side wall.

An embodiment according to the present utility model, the first runner include for successively close to the of the venthole One region, second area and third region, the side wall correspond to the first area, the second area and the third region Part be respectively the first side wall part, second sidewall part and third sidewall sections, the first side wall part, described second The aperture of sidewall sections and the gas vent on the third sidewall sections is sequentially reduced.

An embodiment according to the present utility model, the diameter value range of the gas vent on the first side wall part For 21~30mm, the diameter value range of the gas vent on the second sidewall part is 16~20mm, the third sidewall portion The diameter value range of gas vent on point is 10~15mm.

An embodiment according to the present utility model, between the two neighboring gas vent on the first side wall part Two neighboring exhaust in spacing and the third sidewall sections away from the two neighboring gas vent on, the second sidewall part The spacing in hole is sequentially increased.

An embodiment according to the present utility model, the spacing of the adjacent vent hole on the first side wall part take Value range is 5~20mm, and the value range of the spacing of the adjacent vent hole on the second sidewall part is 21~25mm, described The value range of the spacing of adjacent vent hole on third sidewall sections is 26~50mm.

An embodiment according to the present utility model, the exhaust hole count Zhan on the first side wall part are always vented hole count 10~30%, the exhaust hole count Zhan on the second sidewall part is always vented the 40~80% of hole count, the third sidewall portion Exhaust hole count Zhan on point is always vented the 10~30% of hole count.

An embodiment according to the present utility model, with the growth of the distance of the gas vent to the venthole, The aperture of the gas vent gradually increases.

An embodiment according to the present utility model, with the growth of the distance of the gas vent to the venthole, The spacing of two neighboring gas vent gradually increases.

An embodiment according to the present utility model, the side wall further include

Annular opening；

It is evacuated ring, is covered on the annular opening,

Wherein, multiple gas vents are arranged on the pumping ring and successively arrange along the pumping ring.

An embodiment according to the present utility model, the pumping ring and the annular opening are circular ring shape, and institute State the extending direction that circular ring shape is each perpendicular to the side wall.

An embodiment according to the present utility model, the air inlet is towards the article carrying platform and is used for described interior Chamber inputs processing gas, and the venthole is used to the processing gas inner cavity is discharged.

As shown from the above technical solution, it the advantages of the semiconductor processing of the utility model and has the active effect that

Air inlet is used to input processing gas to the inner cavity of cavity, and venthole is used to processing gas inner cavity is discharged.Due to With the growth of the distance of gas vent to venthole, the cross-sectional area of gas vent has the trend increased, close to the row of venthole The cross-sectional area of stomata wants small further away from the cross-sectional area of the gas vent of venthole, in this way, the processing gas of each gas vent sucking The speed of body is more nearly, and the processing gas air-flow inputted from air inlet can more uniformly flow around after being sprayed on article carrying platform It is dynamic to be inhaled into first runner in turn.When silicon wafer is placed on article carrying platform, processing gas is equal around from silicon wafer center Even diffusion, the direction of the local stress of the film generated on silicon wafer as a result, tend to away from the center of circle of silicon wafer.

Detailed description of the invention

Consider the detailed description of the following preferred embodiment to the utility model in conjunction with the accompanying drawings, the utility model it is each Kind target, feature and advantage will become apparent.Attached drawing is only the exemplary diagram of the utility model, is not necessarily It is drawn to scale.In the accompanying drawings, same appended drawing reference always shows same or similar component.Wherein:

Fig. 1 shows a kind of method that subregion is carried out on silicon chip surface；

Fig. 2 is the local stress directional spreding figure of the film for the 5 pieces of silicon wafers produced using the prior art.

A kind of complete section schematic diagram of semiconductor processing in the embodiment of the utility model of Fig. 3；

Fig. 4 is the stereoscopic schematic diagram of the pumping ring in a kind of embodiment of the utility model；

Fig. 5 is the stereoscopic schematic diagram of the first runner in a kind of embodiment of the utility model；

Fig. 6 is the distribution schematic diagram in the local stress direction of the silicon chip surface in a kind of embodiment of the utility model；

Fig. 7 is the distribution map in the local stress direction of the film of 5 pieces of silicon wafers in a kind of embodiment of the utility model.

Wherein, the reference numerals are as follows:

1, semiconductor processing；10, cavity；11, side wall；110, cylinder；111, first runner；112, annular opening； 113, it is evacuated ring；114, gas vent；115, venthole；116, first area；117, second area；118, third region；12, bottom Wall；13, roof；131, air inlet；14, article carrying platform；15, spray head；16, inner cavity；17, second flow channel；2, silicon wafer.

Specific embodiment

Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, thesing embodiments are provided so that this is practical new Type will be full and complete, and the design of example embodiment is comprehensively communicated to those skilled in the art.It is identical in figure Appended drawing reference indicates same or similar structure, thus the detailed description that will omit them.

As shown in figure 3, Fig. 3 shows a kind of semiconductor processing 1.Semiconductor processing 1 includes cavity 10 and carries Object platform 14.Article carrying platform 14 is arranged in cavity 10, for carrying silicon wafer 2 to be processed.Cavity 10 includes inner cavity 16, first Runner 111, multiple gas vents 114 and air inlet 131.

The preferably cylindrical cavity in inner cavity 16.Inner cavity 16 has bottom wall 12, side wall 11 and roof 13.Side wall 11 is arranged to cylinder Shape structure, and be vertically arranged.Roof 13 and bottom wall 12 are separately positioned on the top and bottom end of side wall 11, bottom wall 12,11 and of side wall Roof 13 encloses closed chamber.Article carrying platform 14 is arranged in the inner cavity 16.Side wall 11 is preferably cylindrical structure, and loading is flat Platform 14 is preferably circular plate type, and article carrying platform 14 and side wall 11 are coaxially disposed.

First runner 111 is arranged outside side wall 11.Circumferentially extending of the first runner 111 along side wall 11.On first runner 111 It is additionally provided with venthole 115.Venthole 115 can be circular hole.Venthole 115 be arranged outside side wall 11, venthole 115 usually with Exhaust pipe is connected, and exhaust pipe is connected with vacuum pump.Vacuum pump is used to extract processing gas out from first runner 111.

Gas vent 114 can be circular hole.Multiple gas vents 114 are arranged on side wall 11.Gas vent 114 is from first runner 111 extend to inner cavity 16, and gas vent 114 connects inner cavity 16 and first runner 111.Multiple gas vents 114 are along first runner 111 Arrangement, with the growth of the distance of gas vent 114 to venthole 115, the aperture of gas vent 114 has the trend increased.

Roof 13 can be circle.Roof 13 is covered on the top of side wall 11, seals the top end opening of side wall 11.

The middle part of roof 13 is arranged in air inlet 131.The one end of air inlet 131 outwardly is connect by pipeline and processing gas source It is logical.Processing gas source can be the tank body for being loaded with processing gas, be also possible to manufacture the generating device of processing gas.The air inlet Mouth 131 is for inputting processing gas into cavity 10.Air inlet 131 is configured so that processing gas downward and sprays downwards.Loading The lower section of air inlet 131 is arranged in platform 14.Article carrying platform 14 is disc, and air inlet 131 is directed at the middle part of article carrying platform 14.

The bottom end of side wall 11 is arranged in bottom wall 12, and seals the bottom end opening of side wall 11.Plate can be set into bottom wall 12 Structure, preferably plectane.

Air inlet 131 is used to input processing gas to the inner cavity of cavity 10 16, and venthole 115 is for processing gas to be discharged Inner cavity 16.Due to the growth of the distance with gas vent 114 to venthole 115, the cross-sectional area of gas vent 114 has growth Trend, the cross-sectional area close to the gas vent 114 of venthole 115 are wanted further away from the cross-sectional area of the gas vent 114 of venthole 115 It is small, in this way, the speed for the processing gas that each gas vent 114 sucks is more nearly, the processing gas gas inputted from air inlet 131 Stream can more uniformly be flowed around after being sprayed on article carrying platform 14 and then is inhaled into first runner 111.When silicon wafer 2 is placed When on article carrying platform 14, processing gas is uniformly spread around from 2 center of silicon wafer, the part of the film ultimately generated as a result, The direction of stress tends to away from the center of circle of silicon wafer 2.

Because silicon wafer 2 is after having deposited film, the directionality local stress on film deviates from the center of circle of silicon wafer 2.As a result, without It is how different by the corner of silicon wafer 2, it all will only see a kind of local stress directional spreding mode in photoresist exposure, i.e., only need It a kind of local stress directional spreding figure is set can meet and photoresist exposure is carried out to this silicon wafer 2, and then be greatly lowered The probability of photoresist exposure failure.

Further, side wall 11 includes annular opening 112 and pumping ring 113.11 concave shape of side wall circularizes opening 112. Annular opening 112 is configured to the bar groove of annular.Annular opening 112 is horizontally disposed.The bottom of annular opening 112 is provided with venthole 115, venthole 115 is connected to annular opening 112.Being evacuated ring 113 is preferably annular shape.Referring to Fig. 4, it is evacuated on ring 113 and is provided with Multiple gas vents 114 radially extended.Gas vent 114 is the through-hole being arranged on annular bleed ring 113.It is evacuated ring 113 and ring 112 coaxial arrangement of shape opening, and be covered on the annular opening 112.The periphery wall of pumping ring 113 is interior with annular opening 112 Wall encloses out first runner 111.

Further, pumping ring 113 is circular ring shape, and annular opening 112 is circular ring shape, and first runner 111 is circular ring shape. Meanwhile pumping ring 113 and annular opening 112 are each perpendicular to the extending direction of side wall 11, first runner 111 is i.e. perpendicular to side wall 11 Extending direction.When first runner 111 is configured to the circular ring shape runner perpendicular to side wall 11, what each gas vent 114 sucked The speed of processing gas is more nearly, and the film on silicon wafer 2 grows more uniform, and the part of the film generated on silicon wafer 2 is answered The direction of power deviates from the center of circle of silicon wafer 2.

Further, referring to Fig. 5, first runner 111 includes successively close to the first area of venthole 115 116, the secondth area Domain 117 and third region 118.Distinguish the part that side wall 11 corresponds to first area 116, second area 117 and third region 118 For the first side wall part, second sidewall part and third sidewall sections.The first side wall part, second sidewall part and third side wall The diameter of gas vent 114 on part is sequentially reduced.

The aperture of gas vent 114 on the first side wall part, second sidewall part and third sidewall sections is under stairstepping Drop, the more convenient arrangement of this gas vent 114.

Further, the spacing of the two neighboring gas vent 114 on the first side wall part, adjacent on second sidewall part The spacing of two gas vents 114, the spacing of two neighboring gas vent 114 on third sidewall sections are sequentially increased.

The spacing of adjacent vent hole 114 on the first side wall part, second sidewall part and third sidewall sections is in ladder Shape rises, in this way, the speed of the whole air-breathing of the gas vent 114 on the first side wall part, second sidewall part and third sidewall sections Spend it is more balanced, referring to Fig. 6, the direction that grown above silicon goes out the local stress of film rear film deviate from the center of circle of silicon wafer 2 and Size is close.

Further, the diameter value range of the gas vent 114 on the first side wall part is 21~30mm, the first side wall portion The diameter value range of gas vent 114 on point is 16~20mm, the diameter value model of the gas vent 114 on third sidewall sections It encloses for 10~15mm.The value range of the spacing of adjacent vent hole 114 on the first side wall part is 5~20mm, second sidewall The value range of the spacing of adjacent vent hole 114 on part is 21~25mm, the adjacent vent hole 114 on third sidewall sections Spacing value range be 26~50mm.Exhaust hole count Zhan on the first side wall part is always vented the 10~30% of hole count, Exhaust hole count Zhan on two sidewall sections is always vented the 40~80% of hole count, and the exhaust hole count Zhan on third sidewall sections is always vented The 10~30% of hole count.Referring to Fig. 7, optimum efficiency can be reached in this way by being provided with, so that the side of the local stress of the film generated To deviating from 2 center of circle of silicon wafer, the film on different silicon wafers 2 the directionality local stress of same measured zone differential seat angle at 5 ° In range.

Further, the height of the loading end of article carrying platform 14 is concordant with gas vent 114.The advantages of this arrangement are as follows Processing gas is input to behind inner cavity 16 from being discharged again from gas vent 114, and the path that air-flow flows through is substantially L-shaped, will not be in inner cavity Turbulent flow is formed in 16, in this way, processing gas uniform flows 2 surface of silicon wafer, the film of the generation on 2 surface of silicon wafer is more uniform.

Further, cavity 10 further includes the spray head 15 that top is arranged in.Spray head 15 is connected to air inlet 131.Spray head 15 For the processing gas inputted from air inlet 131 equably to be sprayed to article carrying platform 14.

Further, semiconductor processing 1 is provided with multiple cavities 10 and multiple article carrying platforms 14.Cavity 10 and loading The quantity of platform 14 is identical, such as there are two being respectively provided with.Article carrying platform 14 is arranged in a one-to-one correspondence with cavity 10, and article carrying platform 14 is set It sets in corresponding cavity 10.Semiconductor processing 1 is additionally provided with second flow channel 17.Second flow channel 17 is connected to each chamber The venthole 115 of body 10.Second flow channel 17 is also connected to vacuum pump.After being arranged in this way, pass through a second flow channel 17 Processing gas in multiple cavities 10 is extracted out.

In another embodiment, with the growth of the distance of gas vent 114 to venthole 115, the aperture of gas vent 114 Gradually increase.The speed for the processing gas that each gas vent 114 sucks is more nearly, and the film on silicon wafer 2 grows more equal Even, the direction of the local stress of the film generated on silicon wafer 2 deviates from the center of circle of silicon wafer 2.

Further, with the growth of the distance of gas vent 114 to venthole 115, the spacing of two neighboring gas vent 114 Gradually increase.In this way, the speed that the surrounding of article carrying platform 14 is evacuated is identical, the local stress direction after film is generated on silicon wafer 2 Deviate from the center of circle of silicon wafer 2.

Further, semiconductor processing is used to prepare C film.Article carrying platform 14 can be carried out heating, such as loading is put down Heating wire is provided in platform 14.When preparing C film, silicon wafer 2 is heated to 250~550 DEG C.The semiconductor processing can To be to improve and obtain on AMAT Producer type.

Add it should be understood that other being used to prepare other than film can also be passed through from the air inlet of semiconductor processing Work gas, e.g. inert protective gas or the catalyzed gas for playing catalytic action.Semiconductor processing is in addition to preparing film Function except, if different functions can also be realized by being passed through other kinds of processing gas from air inlet, such as can be into The functions such as row etching, cleaning.

It should be understood that multiple examples described above can along multiple directions (such as inclination, reverse, horizontal, vertical, etc.) and It is utilized with multiple constructions, without departing from the principles of the present invention.Embodiment shown in the accompanying drawings is only used as the utility model Principle the example effectively applied and be shown and described, the utility model is not limited to these examples any specific Details.

Certainly, once thinking over the above description of representative embodiment, those skilled in the art are just it will be readily understood that can A variety of remodeling, addition, substitution, deletion and other variations are made to these specific embodiments, and these variations are in this reality In the range of novel principle.Therefore, the detailed description of front should be clearly understood that it is only with explanation and exemplary side Come what is provided, the spirit and scope of the utility model are only limited by the appended claims and its equivalent formula.

Claims (12)

1. a kind of semiconductor processing characterized by comprising

Cavity (10), including

Inner cavity (16), the inner cavity have side wall (11) and roof (13)；

First runner (111) is located at the side wall (11) outside, and the first runner (111) also has venthole (115)；

Multiple gas vents (114) are located on the side wall (11), for being connected to the inner cavity (16) and the first runner (111)；And

Air inlet (131) is located at the middle part of the roof (13), is connected to the inner cavity (16)；

Article carrying platform (14), setting is in the cavity (10)；

Wherein, multiple gas vents (114) arrange along the first runner (111), as the gas vent (114) arrive institute The growth of the distance of venthole (115) is stated, the aperture of the gas vent (114) has the trend increased.

2. semiconductor processing as described in claim 1, which is characterized in that the inner cavity (16) be tubular, described first Runner (111) is annular, and the annular vertical is in the extending direction of side wall (11).

3. semiconductor processing as claimed in claim 2, which is characterized in that the first runner (111) includes for successively Close to the first area (116) of the venthole (115), second area (117) and third region (118), the side wall (11) The part of the corresponding first area (116), the second area (117) and the third region (118) is respectively the first side Wall part, second sidewall part and third sidewall sections, the first side wall part, the second sidewall part and the third The aperture of gas vent (114) on sidewall sections is sequentially reduced.

4. semiconductor processing as claimed in claim 3, which is characterized in that the gas vent on the first side wall part (114) diameter value range is 21~30mm, and the diameter value range of the gas vent (114) on the second sidewall part is 16~20mm, the diameter value range of the gas vent (114) on the third sidewall sections are 10~15mm.

5. semiconductor processing as described in claim 3 or 4, which is characterized in that adjacent on the first side wall part The spacing and the third of two neighboring gas vent (114) in the spacing of two gas vents (114), the second sidewall part The spacing of two neighboring gas vent (114) on sidewall sections is sequentially increased.

6. semiconductor processing as claimed in claim 5, which is characterized in that the adjacent exhaust on the first side wall part The value range of the spacing in hole (114) is 5~20mm, the spacing of the adjacent vent hole (114) on the second sidewall part Value range is 21~25mm, the value range of the spacing of the adjacent vent hole (114) on the third sidewall sections is 26~ 50mm。

7. semiconductor processing as claimed in claim 6, which is characterized in that the gas vent on the first side wall part (114) the 10~30% of the total gas vent of Zhan (114) number are counted, gas vent (114) the number Zhan on the second sidewall part is always vented The 40~80% of hole (114) number, gas vent (114) the number total gas vent of Zhan (114) number on the third sidewall sections 10~ 30%.

8. semiconductor processing as described in claim 1, which is characterized in that as the gas vent (114) go out described in The aperture of the growth of the distance of stomata (115), the gas vent (114) gradually increases.

9. semiconductor processing as described in claim 1, which is characterized in that as the gas vent (114) go out described in The spacing of the growth of the distance of stomata (115), two neighboring gas vent (114) gradually increases.

10. semiconductor processing as described in claim 1, which is characterized in that the side wall (11) further includes

Annular opening (112)；

It is evacuated ring (113), is covered on the annular opening (112),

Wherein, multiple gas vents (114) are arranged on the pumping ring (113) and successively arrange along the pumping ring (113) Cloth.

11. semiconductor processing as claimed in claim 10, which is characterized in that the pumping ring (113) and the annular Opening (112) is circular ring shape, and the circular ring shape is each perpendicular to the extending direction of the side wall.

12. semiconductor processing as described in claim 1, which is characterized in that the air inlet (131) is towards the loading Platform (14) is simultaneously used to input processing gas to the inner cavity, and the venthole (115) is used to for processing gas being discharged in described Chamber (16).