CN208701205U - A kind of chemical vapor depsotition equipment with magnetic confinement device - Google Patents

Abstract

The utility model discloses a kind of chemical vapor depsotition equipments with magnetic confinement device, including annular helical circle group, settling chamber and compound electrode, the annular helical circle group is made of two coaxial annular helical circles, the settling chamber is located among described two annular helical circles, its top is equipped with air inlet pipe, the compound electrode is located at deposition chamber interior upper end, including at least two horizontally arranged first unit electrodes and on the outside horizontal arrangement one week second unit electrode is equipped with insulating layer between adjacent first unit electrode and second unit electrode.The utility model is by increasing annular helical circle group and the inclined gas passage of setting, so that the uniformity of deposition is improved, and under the influence of a magnetic field, the chance of plasma and chamber walls collision is reduced, the service life for improving device reduces the loss of plasma.

Description

A kind of chemical vapor depsotition equipment with magnetic confinement device

Technical field

The utility model relates to a kind of chemical vapor deposition units, specifically, being to be related to one kind to have magnetic confinement device Chemical vapor depsotition equipment.

Background technique

It is a kind of in the chemical vapor deposition method of matrix surface deposition solid-state material by the chemical reaction of reaction gas Prepare the good method of uniform thin-film material, heat wire method therein, DC arc jet method, microwave plasma method are successfully answered Preparation for diamond film.

Diamond film material integrates a variety of excellent properties, such as high rigidity, high heat conductance, high transparency, high resistance Rate etc. can be used to production wear-resistant coating, acoustics diaphragm, optical window, the highly thermally conductive substrate of integrated circuit etc..It is led according to application The difference that domain requires, diamond film can be divided into tool level, heat sink grade, optical grade and detector grade (also known as electron level) multiple classes Not.Tool level diamond film has relatively high mechanical property, but internal containing a large amount of tissue defects, presents in appearance black Grey.Heat sink grade diamond film has relatively high thermal conductivity, and internal tissue defects are reduced compared with tool level diamond film.Light The internal structural flaw of classes and grades in school diamond film is further reduced, and has relatively high optical transmittance.Detector grade diamond The free path of the carrier of film is longer, and the diamond-film-like has least internal structural flaw in principle.Above-mentioned optical grade Diamond film possesses the high-quality of similar IIa type natural diamond film with detector grade diamond film, and system is referred to as high-quality Diamond film.

Chinese patent CN201510225072.0 gives a kind of electrode structure and chemical vapor deposition unit, but its chamber Internal wall is easy subject plasma etching and service life is caused to reduce and plasma loss.

Utility model content

The purpose of this utility model is to provide a kind of chemical vapor depsotition equipments with magnetic confinement device, by it The ingehious design of structure improves the service life of device and reduces the loss of plasma.

To achieve the above object, the technical solution adopted in the utility model is as follows:

A kind of chemical vapor depsotition equipment with magnetic confinement device, including annular helical circle group, settling chamber and combination electricity Pole, the annular helical circle group are made of two coaxial annular helical circles, and the settling chamber is located at described two annular helicals Circle is intermediate, and top is equipped with air inlet pipe, and the compound electrode is located at deposition chamber interior upper end, horizontally arranged including at least two One week second unit electrode of first unit electrode and on the outside horizontal arrangement, adjacent first unit electrode and second unit electricity Insulating layer is equipped between pole.

Preferably, the first unit electrode include the ventilation substrate being cascading, even flow plate and inclination shower plate, Substrate of ventilating is equipped with first gas passage, and even flow plate is equipped with multiple second gas channels, please tilt shower plate equipped with multiple thirds Gas passage, the second gas channel cross-section are less than first gas passage, and the third gas channel cross-section is less than the second gas Body channel, and quantity is more than second gas channel, the first gas passage, second gas channel are each perpendicular to first unit electricity The bottom surface angle of the bottom surface of pole, third gas channel and first unit electrode is 70 °, and it is recessed that rectangle is equipped at the top of the even flow plate Slot, this groove are connected to first gas passage and second gas channel, rectangular recess are equipped at the top of the inclination shower plate, this is recessed Slot is connected to second gas channel and third gas channel.

Preferably, the second unit electrode includes the ventilation substrate, even flow plate and vertical shower plate being cascading, Bottom surface of 4th gas passage perpendicular to second unit electrode.

Preferably, each first unit electrode and second unit electrode are electrically connected with independent radio-frequency power supply respectively.

Preferably, the deposition chamber interior bottom is equipped with deposition table.

Preferably, the air inlet pipe is connected with multiple branched inlet pipes in deposition chamber interior, compound electrode upper seal, point into Tracheae and first gas passage are tightly connected, and branched inlet pipe and first gas passage correspond.

There are many forms for the support construction of annular helical circle, and this will not be repeated here.

Compared with prior art, the utility model has the following beneficial effects:

(1) the utility model annular helical circle connects AC power source at work and generates magnetic field, there is horizontal velocity component Charged particle will be acted on by Lorentz force, and the movement of its horizontal direction is made to become circular motion from moving along a straight line, and plasma exists The chance that contact cavity inner wall is reduced under magnetically confined, improves service using life, reduces plasma loss.

(2) the third gas channel slopes of the utility model first unit electrode provide a level side for charged particle To initial velocity, move it under the influence of a magnetic field, annular helical circle connect alternating source generation variation magnetic field make band electrochondria The possible range of sub final deposition position becomes larger, and then improves the uniformity of deposition.

(3) the 6th gas passage of the utility model second unit electrode is vertical, can be avoided the band electrochondria sprayed by it Son hits cavity inner wall due to getting too close to, and causes cavity etching and plasma loss.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of the utility model first unit electrode.

Fig. 2 is the structural schematic diagram of the utility model second unit electrode.

Fig. 3 is the structural schematic diagram of the utility model.

Fig. 4 is the top view of the utility model.

Wherein, the corresponding title of appended drawing reference are as follows: 1- tilts shower plate, 2- even flow plate, 3- ventilation substrate, 4- third gas Body channel, 5- second gas channel, 6- first gas passage, the vertical shower plate of 7-, the 4th gas passage of 8-, 9- deposition table, 10- First unit electrode, 11- second unit electrode, the settling chamber 12-, 13- annular helical circle, 14- branched inlet pipe, 15- air inlet pipe, 16- insulating layer.

Specific embodiment

The utility model is described in further detail with embodiment for explanation with reference to the accompanying drawing, and the mode of the utility model includes But it is not limited only to following embodiment.

Embodiment

As shown in Figs 1-4, a kind of chemical vapor depsotition equipment with magnetic confinement device disclosed by the utility model, including Settling chamber 12 and compound electrode, which is characterized in that further include annular helical circle group, the annular helical circle group is coaxial by two Annular helical circle 13 forms, and the settling chamber 12 is located among described two annular helical circles 13, and top is equipped with air inlet pipe 15, The air inlet pipe 15 is inside settling chamber 12, compound electrode upper seal is connected with multiple branched inlet pipes 14, branched inlet pipe 14 with First gas passage 6 is tightly connected, and branched inlet pipe 14 and first gas passage 6 correspond.12 interior bottom portion of settling chamber Equipped with deposition table 9.The compound electrode is located at 12 inner upper end of settling chamber, including at least two horizontally arranged first unit electricity One week second unit electrode 11 of pole 10 and on the outside horizontal arrangement, adjacent first unit electrode 10 and second unit electrode Be equipped with insulating layer 16 between 11, each first unit electrode 10 and second unit electrode 11 respectively with independent radio frequency electrical Source electrical connection.The first unit electrode 10 include be cascading ventilation substrate 3, even flow plate 2 and inclination shower plate 1, Substrate 3 of ventilating is equipped with first gas passage 6, and even flow plate 2 is equipped with multiple second gas channels 5, and inclination shower plate 1 is equipped with multiple Third gas channel 4,5 section of second gas channel are less than first gas passage 6, and 4 section of third gas channel is small In second gas channel 5, and quantity is more than second gas channel 5, and the first gas passage 6, second gas channel 5 are hung down Directly in the bottom surface of first unit electrode 10, third gas channel 4 and the bottom surface angle of first unit electrode 10 are 70 °, described even Rectangular recess is equipped at the top of flowing plate 2, this groove is connected to first gas passage 6 and second gas channel 5, the inclination shower plate 1 top is equipped with rectangular recess, this groove is connected to second gas channel 5 and third gas channel 4.The second unit electrode 11 Including the ventilation substrate 3, even flow plate 2 and vertical shower plate 7 being cascading, the vertical shower plate 7 is equipped with multiple the Four gas passages 8, bottom surface of the 4th gas passage 8 perpendicular to second unit electrode 11.

Utility model works principle are as follows: place the substrate in deposition table, the combined electrode ionization of gas is after plasma Into settling chamber, annular helical circle group connects the alternating current of same-phase, and the plasma projected by second unit electrode is close heavy Product chamber interior walls only move in vertical direction, are deposited on substrate surface under the effect of gravity.Through first unit electrode project it is equal from Daughter is in addition to vertical motion component, and there are also horizontal motion components, and motion profile is under the magnetic fields that annular helical circle generates It is arc-shaped, since apart from chamber walls farther out, chamber walls will not be struck, and be finally deposited on substrate surface, due to The presence in annular helical circle magnetic field, possible deposition position are a region, this is improved the uniformity of deposition.

The utility model is by increasing annular helical circle group and the inclined gas passage of setting, so that the uniformity of deposition It is improved, and under the influence of a magnetic field, the chance of plasma and chamber walls collision reduces, and improves the use of device Service life reduces the loss of plasma.

Above-described embodiment is only one of preferred embodiments of the present invention, should not be taken to limit the utility model Protection scope, as long as the utility model body design thought and mentally make have no the change of essential meaning or profit Color, it is solved the technical issues of it is still consistent with the utility model, the protection scope of the utility model should all be included in Within.

Claims (6)

1. a kind of chemical vapor depsotition equipment with magnetic confinement device, including settling chamber (12) and compound electrode, feature exist In further including annular helical circle group, the annular helical circle group is made of two coaxial annular helical circles (13), the deposition Room (12) is located among described two annular helical circles (13), and top is equipped with air inlet pipe (15), and the compound electrode is located at heavy Product room (12) inner upper end, including at least two horizontally arranged first unit electrodes (10) and on the outside horizontal arrangement one week Second unit electrode (11), between adjacent first unit electrode (10) and second unit electrode (11) be equipped with insulating layer (16).

2. a kind of chemical vapor depsotition equipment with magnetic confinement device according to claim 1, which is characterized in that described First unit electrode (10) includes the ventilation substrate (3) being cascading, even flow plate (2) and inclination shower plate (1), base of ventilating Plate (3) is equipped with first gas passage (6), and even flow plate (2) is equipped with multiple second gas channels (5), and inclination shower plate (1) is equipped with more A third gas channel (4), second gas channel (5) section are less than first gas passage (6), the third gas channel (4) section is less than second gas channel (5), and quantity is more than second gas channel (5), the first gas passage (6), second Gas passage (5) is each perpendicular to the bottom surface of first unit electrode (10), third gas channel (4) and first unit electrode (10) Bottom surface angle is 70 °, and rectangular recess, this groove and first gas passage (6) and second gas are equipped at the top of the even flow plate (2) Channel (5) connection, inclination shower plate (1) top are equipped with rectangular recess, this groove and second gas channel (5) and third gas Body channel (4) connection.

3. a kind of chemical vapor depsotition equipment with magnetic confinement device according to claim 2, which is characterized in that described Second unit electrode (11) includes the ventilation substrate (3), even flow plate (2) and vertical shower plate (7) being cascading, described perpendicular Straight shower plate (7) is equipped with multiple 4th gas passages (8), and the 4th gas passage (8) is perpendicular to second unit electrode (11) bottom surface.

4. a kind of chemical vapor depsotition equipment with magnetic confinement device according to claim 3, which is characterized in that described Each first unit electrode (10) and second unit electrode (11) are electrically connected with independent radio-frequency power supply respectively.

5. a kind of chemical vapor depsotition equipment with magnetic confinement device according to claim 4, which is characterized in that described Settling chamber's (12) interior bottom portion is equipped with deposition table (9).

6. a kind of chemical vapor depsotition equipment with magnetic confinement device according to claim 5, which is characterized in that described Air inlet pipe (15) is connected with multiple branched inlet pipes (14), branched inlet pipe in settling chamber (12) inside, compound electrode upper seal (14) it is tightly connected with first gas passage (6), branched inlet pipe (14) and first gas passage (6) correspond.