CN208667842U - Low pressure chemical vapor deposition equipment - Google Patents
Low pressure chemical vapor deposition equipment Download PDFInfo
- Publication number
- CN208667842U CN208667842U CN201821487966.2U CN201821487966U CN208667842U CN 208667842 U CN208667842 U CN 208667842U CN 201821487966 U CN201821487966 U CN 201821487966U CN 208667842 U CN208667842 U CN 208667842U
- Authority
- CN
- China
- Prior art keywords
- buffer layer
- outer tube
- sub
- chemical vapor
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model relates to semiconductor processing equipment technical fields, disclose a kind of low pressure chemical vapor deposition equipment, for deposit polycrystalline silicon, including pedestal, outer tube and inner tube, outer tube is set on the base, inner tube is set to the inside of outer tube and for providing deposition space, is formed with buffer layer on the inner wall of outer tube.By being formed with buffer layer on the inner wall of outer tube, so that the polysilicon formed in deposition process is not directly formed on inner wall, and it is formed on buffer layer.In the LPCVD technique of low-voltage high-temperature, polysilicon layer on the buffer layer is formed because the concentration of stress brought by thermal expansion is applied on buffer layer, reduces stress intensity suffered by outer tube, outer tube is not likely to produce slight crack.During plant maintenance and maintenance each time, no replacement is required outer tube, and old buffer layer need to only be removed, form new buffer layer on the inner wall of outer tube again, that is, it may be repeated LPCVD technique.Outer tube does not have to scrap, and can be recycled, and reduces waste, greatly reduces cost.
Description
Technical field
The utility model relates to semiconductor processing equipment technical field, in particular to a kind of low-pressure chemical vapor deposition is set
It is standby.
Background technique
Chemical vapor deposition (Chemical Vapor Deposition, CVD) is a kind of Chemical Engineering Technology, and the technology is main
Be using one or more of gas phase compounds or simple substance containing film element, on the surface of a substrate carry out chemical reaction generate it is thin
The method of film.Chemical vapor deposition be broadly divided into aumospheric pressure cvd (Atmospheric Pressure CVD,
APCVD), low-pressure chemical vapor deposition (Low Pressure CVD, LPCVD) and plasma enhanced CVD
(plasma enhanced CVD, PECVD).Low pressure chemical vapor deposition equipment is the production of low-pressure chemical vapor deposition process
It is (main to deposit various function films by the method for chemically reacting vapour phase epitaxy under conditions of low-voltage high-temperature on substrate for equipment
If depositing Si on a silicon substrate3N4And polysilicon membrane).
In low-pressure chemical vapor deposition process, reaction gas also can be in the outer tube in low pressure chemical vapor deposition equipment
One layer of polysilicon layer is formed on inner wall.And in the prior art, outer tube is generally outer tube made of quartz, quartz and polysilicon
Thermal linear expansion coefficient difference is larger, and the thermal linear expansion coefficient of polysilicon is bigger than normal.In the LPCVD technique of low-voltage high-temperature, shape
It is greater than the expansion force of outer tube at the expansion force of the polysilicon layer on the inner wall of outer tube, stress suffered by outer tube is caused to increase
Add, finally, outer tube generates slight crack under the action of stress.During plant maintenance and maintenance each time, outer tube will
It scraps, can not be recycled, cause great waste.
Utility model content
In order to solve the above-mentioned technical problem the utility model proposes, and it is an object of the present invention to provide a kind of low-pressure chemical vapor deposition
Equipment.The low pressure chemical vapor deposition equipment of the utility model is formed with buffer layer by the inner wall in outer tube, so that polysilicon
Formation forms polysilicon layer on the buffer layer, and polysilicon layer thermally expands brought stress concentration and is applied to buffer layer, reduces
Stress intensity suffered by outer tube, outer tube are not likely to produce slight crack and scrap, and reduce waste, save the cost.
Specifically, the utility model provides a kind of low pressure chemical vapor deposition equipment, is used for deposit polycrystalline silicon, packet
Include: pedestal, outer tube and inner tube, outer tube setting on the base, said inner tube be set to the inside of the outer tube and
For providing deposition space, buffer layer is formed on the inner wall of the outer tube.
Compared to existing technologies, low pressure chemical vapor deposition equipment provided by the utility model, in the inner wall of outer tube
On be formed with one layer of buffer layer so that polysilicon formed on the buffer layer.In the LPCVD technique of low-voltage high-temperature, it is formed in slow
It is big to reduce stress suffered by outer tube because the concentration of stress brought by thermal expansion is applied on buffer layer for the polysilicon layer rushed on layer
Small, outer tube is not likely to produce slight crack.During plant maintenance and maintenance each time, no replacement is required outer tube, and only needing will be old
Buffer layer removal, new buffer layer is formed on the inner wall of outer tube again, that is, may be repeated LPCVD technique.Outer tube does not have to report
It is useless, it can be recycled, reduce waste, greatly reduce cost.In addition, buffer layer also has heat insulation, so that reaching outer
The heat of pipe reduces, and the temperature of outer tube, which rises, to be reduced, and is not susceptible to thermally expand, protection outer tube.
In addition, preferably, the thermal linear expansion coefficient of the buffer layer be greater than the outer tube thermal linear expansion coefficient,
And it is less than the thermal linear expansion coefficient for being formed in the polysilicon layer on surface of the buffer layer during the deposition process.
According to the preferred embodiment, thermal linear expansion coefficient and formation of the thermal linear expansion coefficient of buffer layer between outer tube
Between the thermal linear expansion coefficient of polysilicon layer on the buffer layer, in the LPCVD technique of low-voltage high-temperature, buffer layer is in outer tube
Buffer function is played between polysilicon layer, so that the expansion force variation between outer tube and polysilicon layer tends towards stability, is reduced
The thermal expansion that outer tube is generated because heated, further decreases stress intensity suffered by outer tube, protection outer tube.
Further, preferably, the buffer layer is formed as 3-tier architecture, comprising: the first sub- buffer layer, the second son are slow
Layer and the sub- buffer layer of third are rushed, and the thermal linear expansion coefficient of adjacent two layers is different.
According to the preferred embodiment, in the LPCVD technique of low-voltage high-temperature, buffer layer has the buffer structure to have three layers, is conducive to
By the polysilicon layer of formation on the buffer layer because the concentration of stress brought by thermal expansion is applied on buffer layer, further decrease outer
The suffered stress intensity of pipe, protection outer tube.
In addition, preferably, the sub- buffer layer of the third is close to the inner wall setting of the outer tube, and third buffers
The thermal linear expansion coefficient of layer is greater than the thermal linear expansion coefficient of the described second sub- buffer layer.
According to the preferred embodiment, the thermal linear expansion coefficient of the second sub- buffer layer is less than the sub- buffer layer of third, heated
Afterwards, buffer layer will be buffered to the small side direction bending of thermal expansion coefficient, the sub- buffer layer of third that be close to outer tube wall to the second son
The direction bending of layer reduces the sub- buffer layer of third in LPCVD technique and contacts with the stress of outer tube, and then reduces suffered by outer tube
Stress intensity, protection outer tube.
Further, described preferably, the second sub- buffer layer is close to the surface setting of the sub- buffer layer of the third
The thermal linear expansion coefficient of second sub- buffer layer is less than the thermal linear expansion coefficient of the described first sub- buffer layer.
According to the preferred embodiment, the thermal linear expansion coefficient of the second sub- buffer layer is swollen less than the linear heat of the first sub- buffer layer
Swollen coefficient, after heated, buffer layer will be buffered to the small side direction bending of thermal expansion coefficient, the first son to connect with polysilicon layer
Layer is bent to the direction of the second sub- buffer layer, is reduced the first sub- buffer layer in LPCVD technique and is contacted with the stress of polysilicon layer,
Reduce the stress intensity that the polysilicon layer that buffer layer is subject to is generated by thermal expansion, and then reduce stress intensity suffered by outer tube,
Protection outer tube.
In addition, preferably, the hardness of the second sub- buffer layer is greater than the described first sub- buffer layer, the sub- buffer layer of third
Hardness.
According to the preferred embodiment, by the hardness of the second sub- buffer layer be set greater than its two sides the first sub- buffer layer,
The hardness of two sub- buffer layers, enhances the whole structural strength of buffer layer, and buffer layer is not likely to produce slight crack.
In addition, preferably, the first sub- buffer layer is formed as compared with second, third described sub- buffer layer more far from institute
The inner wall of outer tube is stated, Van der Waals force when connecting between the first sub- buffer layer and polysilicon layer is greater than the outer tube and polycrystalline
Van der Waals force when being connected between silicon layer.
Binding ability when outer tube is directly connected to polysilicon layer is smaller, and polysilicon layer is easy to peel off from outer tube, generates
The performance of formed semiconductor devices is influenced after particle.According to the preferred embodiment, when the first sub- buffer layer is connect with polysilicon layer
Binding ability be greater than binding ability of outer tube when connecting with polysilicon layer, the first sub- buffer layer is attached with polysilicon, can
To prevent polysilicon layer from generating slight crack and peel off, subtracts less granular generation, improve the performance of formed semiconductor devices.
In addition, preferably, the first sub- buffer layer be silicon dioxide film, and the first sub- buffer layer with a thickness of
100 angstroms~500 angstroms.
In addition, preferably, the second sub- buffer layer be silicon nitride film, and the second sub- buffer layer with a thickness of
100 angstroms~500 angstroms.
In addition, preferably, the sub- buffer layer of the third be silicon dioxide film, and the sub- buffer layer of the third with a thickness of
100 angstroms~500 angstroms.
According to the preferred embodiment, the binding force of silica and polysilicon is excellent, and the first sub- buffer layer can be with polysilicon
Layer is preferably combined, and polysilicon layer is further prevented to peel off, and subtracts less granular generation, improves formed semiconductor device
The performance of part.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model first embodiment；
Fig. 2 is the structural schematic diagram of the utility model second embodiment；
Fig. 3 is the partial enlarged view in the portion A in Fig. 2.
Description of symbols:
1, pedestal；2, outer tube；3, inner tube；4, cassette；5, heater；6, wafer；7, first gas injection pipe；8, the second gas
Body injection pipe；9, exhaust outlet；10, buffer layer；11, the first sub- buffer layer；12, the second sub- buffer layer；13, the sub- buffer layer of third.
Specific embodiment
With reference to the accompanying drawings of the specification, the utility model is described in further detail.It is schematically simple in attached drawing
Change shows the structure etc. of low pressure chemical vapor deposition equipment.
In the description of the present invention, it should be understood that term " on ", "lower", "front", "rear", "left", "right",
The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only
For ease of description the utility model and simplify description, rather than the device or element of indication or suggestion meaning must have it is specific
Orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.
Embodiment one
The first embodiment of the utility model provides a kind of low pressure chemical vapor deposition equipment, shown in Figure 1, packet
Include pedestal 1, outer tube 2, inner tube 3, cassette 4 and heater 5.Outer tube 2 open at one end is simultaneously connect with pedestal 1, outer tube 2 it is another
End seal is closed, and pedestal 1 and outer tube 2 constitute confined space.Inner tube 3 is co-axially located in outer tube 2, the both ends open of inner tube 3 and offer
Deposition space.Cassette 4 is arranged on pedestal 1 and is located in inner tube 3, and cassette 4 is for carrying wafer 6.Heater 5 is from outer tube 2
Closed end is covered in the outside of outer tube 2, and predetermined space is kept between heater 5 and pedestal 1, and heater 5 can be to the inside of outer tube 2
Heating.First gas injection pipe 7, second gas injection pipe 8 and exhaust outlet 9, first gas injection are additionally provided on pedestal 1
Pipe 7 and second gas injection pipe 8 are connected with inner tube 3, and exhaust outlet 9 is connected with outer tube 2.
When carrying out depositing operation, referring specifically to shown in Fig. 1, arrow indicates the flow direction of reaction gas in figure.It will carry
There is the cassette 4 of wafer 6 to be placed on pedestal 1, pedestal 1 drives cassette 4 to rise, and cassette 4 rises up into inner tube 3, pedestal 1 and outer tube 2
Constitute the closed structure for deposition.By first gas injection pipe 7 and second gas injection pipe 8 by needed for deposition reaction
One gas and second gas are delivered in inner tube 3, and heater 5 heats the deposition space in inner tube 3, first gas and
Two gases chemically react in deposition space, and in the Surface Creation polysilicon membrane of wafer 6.First gas and the second gas
The exhaust gas generated after precursor reactant is discharged from exhaust outlet 9.
First gas and second gas can also form polysilicon layer (in order to distinguish polysilicon shape on the inner wall of outer tube 2
At the difference of position, it will be formed on wafer 6 and be known as polysilicon membrane, will be formed on 2 inner wall of outer tube and be known as polysilicon
Layer, the two actually constitute identical).Wherein, polysilicon layer is different from the thermal linear expansion coefficient of outer tube 2 made of quartz, polycrystalline
The thermal linear expansion coefficient of silicon layer is larger, and biggish thermal expansion can occur when heated, and stress suffered by outer tube 2 is caused to increase
Add, finally, outer tube 2 generates slight crack under the action of stress.During plant maintenance and maintenance each time, outer tube 2 is all
It scraps, can not be recycled, cause great waste.
Therefore, shown in Figure 1, the utility model is formed with buffer layer 10 on the inner wall of outer tube 2, so that polysilicon is not
It is formed directly on inner wall, and is formed on buffer layer 10 to constitute polysilicon layer.In the LPCVD technique of low-voltage high-temperature
In, the polysilicon layer being formed on buffer layer 10 reduces outer because the concentration of stress brought by thermal expansion is applied on buffer layer 10
Stress intensity suffered by pipe 2, outer tube 2 are not likely to produce slight crack.During plant maintenance and maintenance each time, no replacement is required
Outer tube 2, and old buffer layer 10 need to only be removed, form new buffer layer 10 on the inner wall of outer tube 2 again, that is, it may be repeated
LPCVD technique.Outer tube 2 does not have to scrap, and can be recycled, and reduces waste, greatly reduces cost.
Preferably, the thermal linear expansion coefficient of buffer layer 10 is greater than the thermal linear expansion coefficient of outer tube 2, and is less than heavy
The thermal linear expansion coefficient of the polysilicon layer formed during product.At this point, in the LPCVD technique of low-voltage high-temperature, buffer layer 10
Buffer function is played between outer tube 2 and polysilicon layer, so that the expansion force variation between outer tube 2 and polysilicon layer tends to be flat
It is slow, the thermal expansion that outer tube is generated because heated is reduced, stress intensity suffered by outer tube 2, protection outer tube 2 are further decreased.
In the present embodiment, buffer layer 10 is formed by silica, and the thermal linear expansion coefficient of silica is greater than stone
The thermal linear expansion coefficient of outer tube 2 made of English and the thermal linear expansion coefficient for being less than polysilicon layer.In other embodiments,
Buffer layer 10 is also possible to be formed by material of any thermal linear expansion coefficient between quartz and polysilicon.
The thermal linear expansion coefficient of polysilicon layer is big, is easy to generate slight crack when heated and peel off, the polycrystalline of peeling
Silicon particle is fallen in outer tube 2, pollutes reaction gas, reduces the performance of formed semiconductor devices.Silica and polysilicon
Binding force it is excellent, buffer layer 10 made of silica can be preferably combined with polysilicon layer, prevent polysilicon layer
It peels off, subtracts less granular generation, improve the performance of formed semiconductor devices.
Embodiment two
The second embodiment of the utility model provides a kind of low pressure chemical vapor deposition equipment, and second embodiment is
Further improvement to first embodiment, not doing the part illustrated includes appended drawing reference and verbal description, with first
Embodiment is identical, and details are not described herein.
Second embodiment mainly thes improvement is that second in the utility model is real relative to first embodiment
It applies in mode, from the point of view of Fig. 2 and Fig. 3, buffer layer 10 is formed as 3-tier architecture, successively includes first sub- the 11, second son of buffer layer
Buffer layer 12 and the sub- buffer layer 13 of third, the sub- buffer layer 13 of third are close to the inner wall of outer tube 2, the linear thermal expansion system of adjacent two layers
Number is different.Buffer layer 10 at this time has 3-tier architecture, and correspondingly, in the LPCVD technique of low-voltage high-temperature, buffer layer 10 has
The buffer structure to have three layers is conducive to the polysilicon layer of formation because the concentration of stress brought by thermal expansion is applied to buffer layer 10
On, further decrease stress intensity suffered by outer tube 2, protection outer tube 2.
Particularly, the thermal linear expansion coefficient of the first sub- buffer layer 11 and the sub- buffer layer 13 of third is all larger than the second son buffering
The thermal linear expansion coefficient of layer 12.After heated, buffer layer 10 will be to the small side direction bending of thermal expansion coefficient, namely and polycrystalline
The sub- buffer layer 13 of third of the first sub- buffer layer 11 and abutting 2 inner wall of outer tube that silicon layer connects is slow to the second son for being located at middle part
Rush layer 12 direction bending shrink, reduce in LPCVD technique the first sub- buffer layer 11 contacted with the stress of polysilicon layer and
The sub- buffer layer 13 of third is contacted with the stress of outer tube 2, and then reduces stress intensity suffered by outer tube 2, protection outer tube 2.
Preferably, the hardness of the second sub- buffer layer 12 is greater than the hardness of the first sub- buffer layer 11, the sub- buffer layer 13 of third.Position
It is maximum in the hardness of the second sub- buffer layer 12 at 10 middle part of buffer layer, be conducive to the whole structural strength for enhancing buffer layer 10,
Buffer layer 10 is avoided to generate slight crack.
Preferably, the structure of the buffer layer 10 in present embodiment is ONO structure, specifically, the first sub- 11 He of buffer layer
The sub- buffer layer 13 of third is silicon dioxide film, and the second sub- buffer layer 12 is silicon nitride film, forms SiO2-Si3N4-SiO2Structure.
Wherein, the thickness range of the first sub- buffer layer 11, the second sub- buffer layer 12 and the sub- buffer layer 13 of third is 100 angstroms~500 angstroms.
Second sub- 12 hardness of buffer layer made of silicon nitride is big, support buffer layer 10 is also helped, so that buffer layer 10 can
To be preferably attached on the inner wall of outer tube 2.Van der Waals force when connecting between silica and polysilicon is greater than quartzy and more
Therefore Van der Waals force when connecting between crystal silicon layer makes the first sub- buffer layer 11 with silica, enhances the first sub- buffer layer
11 in conjunction with polysilicon layer, prevents that the polysilicon layer of slight crack peels off, subtracts less granular generation.
The technical solution of the utility model is not limited to low pressure chemical vapor deposition equipment, is also applied for atmospheric chemical vapor
Depositing device or plasma enhanced CVD equipment.
To those skilled in the art, in the range of the utility model technical idea can as needed and for
Each step of above-mentioned control method is deleted or sequence adjusts.
It will be understood by those skilled in the art that in above-mentioned each embodiment, in order to keep reader more preferably geographical
It solves the application and proposes many technical details.But even if without these technical details and based on the respective embodiments described above
Various changes and modifications can also realize each claim of the application technical solution claimed substantially.Therefore, in reality
In, can to above embodiment, various changes can be made in the form and details, without departing from the spirit of the utility model
And range.
Claims (10)
1. a kind of low pressure chemical vapor deposition equipment, it to be used for deposit polycrystalline silicon characterized by comprising pedestal, outer tube and interior
Pipe,
The outer tube is arranged on the base,
Said inner tube is set to the inside of the outer tube and for providing deposition space,
Buffer layer is formed on the inner wall of the outer tube.
2. low pressure chemical vapor deposition equipment according to claim 1, which is characterized in that the linear heat of the buffer layer is swollen
Swollen coefficient is greater than the thermal linear expansion coefficient of the outer tube, and is less than the surface for being formed in the buffer layer during the deposition process
Polysilicon layer thermal linear expansion coefficient.
3. low pressure chemical vapor deposition equipment according to claim 1, which is characterized in that the buffer layer is formed as 3 layers
Structure, comprising: the first sub- buffer layer, the second sub- buffer layer and the sub- buffer layer of third, and the thermal linear expansion coefficient of adjacent two layers
It is different.
4. low pressure chemical vapor deposition equipment according to claim 3, which is characterized in that the sub- buffer layer of third is close to
The inner wall of the outer tube is arranged, and the thermal linear expansion coefficient of the sub- buffer layer of the third is greater than the line of the described second sub- buffer layer
Linear thermal expansion coefficient.
5. low pressure chemical vapor deposition equipment according to claim 4, which is characterized in that the second sub- buffer layer is close to
The surface of the sub- buffer layer of third is arranged, and the thermal linear expansion coefficient of the second sub- buffer layer is less than the first son buffering
The thermal linear expansion coefficient of layer.
6. low pressure chemical vapor deposition equipment according to claim 5, which is characterized in that the second sub- buffer layer it is hard
Degree is greater than the hardness of the described first sub- buffer layer, the sub- buffer layer of third.
7. low pressure chemical vapor deposition equipment according to claim 3, which is characterized in that the first sub- buffer layer is formed
For compared with the inner wall of second, third sub- buffer layer more far from the outer tube, the first sub- buffer layer and polysilicon layer it
Between connect when Van der Waals force be greater than between the outer tube and polysilicon layer connect when Van der Waals force.
8. according to low pressure chemical vapor deposition equipment described in any one in claim 3-7, which is characterized in that described
One sub- buffer layer be silicon dioxide film, and the first sub- buffer layer with a thickness of 100 angstroms~500 angstroms.
9. according to low pressure chemical vapor deposition equipment described in any one in claim 3-7, which is characterized in that described
Two sub- buffer layers be silicon nitride film, and the second sub- buffer layer with a thickness of 100 angstroms~500 angstroms.
10. according to low pressure chemical vapor deposition equipment described in any one in claim 3-7, which is characterized in that described
The sub- buffer layer of third be silicon dioxide film, and the sub- buffer layer of the third with a thickness of 100 angstroms~500 angstroms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821487966.2U CN208667842U (en) | 2018-09-11 | 2018-09-11 | Low pressure chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821487966.2U CN208667842U (en) | 2018-09-11 | 2018-09-11 | Low pressure chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208667842U true CN208667842U (en) | 2019-03-29 |
Family
ID=65841691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821487966.2U Active CN208667842U (en) | 2018-09-11 | 2018-09-11 | Low pressure chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208667842U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113684468A (en) * | 2021-07-14 | 2021-11-23 | 深圳市拉普拉斯能源技术有限公司 | Quartz part protective layer and preparation method thereof |
-
2018
- 2018-09-11 CN CN201821487966.2U patent/CN208667842U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113684468A (en) * | 2021-07-14 | 2021-11-23 | 深圳市拉普拉斯能源技术有限公司 | Quartz part protective layer and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kamins | Polycrystalline silicon for integrated circuits and displays | |
| KR102499655B1 (en) | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same | |
| CN101144181B (en) | Film formation apparatus for semiconductor process and method for using the same | |
| JP2014209572A (en) | Cleaning method, semiconductor device manufacturing method, substrate processing apparatus and program | |
| JPH04123257U (en) | Bias ECR plasma CVD equipment | |
| CN208667842U (en) | Low pressure chemical vapor deposition equipment | |
| CN101205062A (en) | Reaction chamber for manufacturing a carbon nanotube, apparatus for manufacturing the carbon nanotube and system for manufacturing the carbon nanotube | |
| JP6255335B2 (en) | Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program | |
| JP2018046129A (en) | Method of manufacturing semiconductor device, substrate processing device, and program | |
| TW200536947A (en) | A method for extending time between chamber cleaning process | |
| KR102410555B1 (en) | Substrate processing method and film forming system | |
| CN100567565C (en) | The formation method of silicon-containing film and the method that reduces granule amount | |
| JP2991830B2 (en) | Chemical vapor deposition apparatus and chemical vapor deposition method using the same | |
| CN108179468A (en) | A kind of device and method for the deposit of silicon substrate polysilicon membrane | |
| CN102760640B (en) | Thermal oxidation system with liquid accumulation preventing function and thermal oxidation method | |
| CN107541714A (en) | A kind of method for fast growing of big size graphene glass | |
| CN102839359A (en) | Miniature experimental facility for low-pressure chemical vapor phase deposition | |
| Morosanu et al. | Mechanism of the chemical vapour deposition of Si3N4 films from SiH2Cl2 and NH3 under diffusion-controlled conditions | |
| JP2763203B2 (en) | Chemical vapor deposition equipment | |
| CN110408911A (en) | A kind of controllable preparation device and method of large area film | |
| WO2015088681A1 (en) | Method of deposition of highly scratch-resistant diamond films onto glass substrates by use of a plasma-enhanced chemical vapor deposition | |
| WO2012057128A1 (en) | Film forming device and film forming method employing same | |
| US20220319846A1 (en) | Method of crystallizing amorphous silicon film and deposition apparatus | |
| JP2003105546A (en) | Chemical vapor phase growth system and chemical vapor phase growth method using the same | |
| CN107879756B (en) | A method of silica whisker is prepared in situ online inside carbon ceramic composite material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |