CN208654487U - Display screen and electronic equipment - Google Patents
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- CN208654487U CN208654487U CN201821225262.8U CN201821225262U CN208654487U CN 208654487 U CN208654487 U CN 208654487U CN 201821225262 U CN201821225262 U CN 201821225262U CN 208654487 U CN208654487 U CN 208654487U
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- 239000000758 substrate Substances 0.000 claims abstract description 98
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims description 50
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- 239000011159 matrix material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 4
- 230000005622 photoelectricity Effects 0.000 claims description 4
- 238000012216 screening Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
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- 239000011248 coating agent Substances 0.000 description 3
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- 239000003292 glue Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910004304 SiNy Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 239000003086 colorant Substances 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
The application discloses a kind of display screen, including hardening coat, liquid crystal layer and substrate, hardening coat is oppositely arranged with substrate, liquid crystal layer is between hardening coat and substrate, substrate includes substrate, circuit layer and chromatic filter layer, circuit layer and chromatic filter layer are sequentially laminated on side of the substrate towards liquid crystal layer, and circuit layer includes multiple photoelectric sensors, and multiple photoelectric sensors are used to incude the target light for carrying user fingerprints information.Above-mentioned display screen accounting is larger.A kind of electronic equipment is also disclosed in the application.
Description
Technical field
This application involves electronic technology field more particularly to a kind of display screen and a kind of electronic equipment.
Background technique
The fingerprint recognition component of conventional electronic devices is in occupation of the space of electronic equipment non-display area, so that electronic equipment
It is limited to shield accounting raising.And as screen accounting demand of the user to electronic equipment is higher and higher, how to reduce fingerprint recognition component
The area of the non-display area of electronic equipment is occupied, becomes problem to be solved to improve the screen accounting of electronic equipment.
Utility model content
Technical problems to be solved in this application are to provide a kind of biggish display screen of screen accounting and electronic equipment.
The application embodiment adopts the following technical scheme that
On the one hand, a kind of display screen, including hardening coat, liquid crystal layer and substrate, the hardening coat and the base are provided
Plate is oppositely arranged, the liquid crystal layer between the hardening coat and the substrate, the substrate include substrate, circuit layer and
Chromatic filter layer, the circuit layer and the chromatic filter layer are sequentially laminated on the substrate towards the side of the liquid crystal layer,
The circuit layer includes multiple photoelectric sensors, and the multiple photoelectric sensor is used to incude the target for carrying user fingerprints information
Light.
On the other hand, a kind of electronic equipment, including controller and above-mentioned display screen are also provided, the controller is electrically connected institute
State display screen.
In a substrate due to the setting of multiple photoelectric sensors, multiple photoelectric sensors are integrated in the display surface of display screen
In plate, multiple photoelectric sensors are located in the display area of display screen, know so being formed by fingerprint by multiple photoelectric sensors
Other mould group can be set in viewing area, and fingerprint recognition mould group is not necessarily to occupy the non-display area space of display screen, and the non-of display screen shows
Show that area can reduce compared to traditional display screen, the viewing area of display screen can increase compared to traditional display screen, to improve
The screen accounting of the electronic equipment of display screen and application display screen.In the application, the screen accounting of electronic equipment and display screen is larger,
It even can be realized full screen display.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the application, attached drawing needed in embodiment will be made below
Simply introduce, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the application, general for this field
For logical technical staff, without creative efforts, other attached drawings can also be obtained such as these attached drawings.
Fig. 1 is the structural schematic diagram of a kind of electronic equipment provided by the present application；
Fig. 2 is the structural schematic diagram of the display screen of electronic equipment shown in Fig. 1；
Fig. 3 is the structural schematic diagram of the substrate of display screen shown in Fig. 2 in the first embodiment；
Fig. 4 is the schematic diagram of the circuit layer projection on base material of display screen shown in Fig. 2；
Fig. 5 is the schematic diagram of the part-structure of an identification sub-pixel of display screen shown in Fig. 2；
Fig. 6 is a kind of driver' s timing figure of the circuit structure shown in Fig. 5 in use state；
Fig. 7 is the structural schematic diagram of the photoelectric sensor of substrate shown in Fig. 3；
Fig. 8 is the structural schematic diagram of the substrate of display screen shown in Fig. 2 in a second embodiment；
Fig. 9 is the structural schematic diagram of the photoelectric sensor of substrate shown in Fig. 8；
Figure 10 is the structural schematic diagram of the substrate of display screen shown in Fig. 2 in the third embodiment；
Figure 11 is the structural schematic diagram of the substrate of display screen shown in Fig. 2 in the fourth embodiment；
Figure 12 is the structural schematic diagram of the substrate of display screen shown in Fig. 2 in the 5th embodiment；
Figure 13 is the structural schematic diagram of the substrate of display screen shown in Fig. 2 in the sixth embodiment.
Specific embodiment
With reference to the accompanying drawing, embodiments herein is described.
Referring to Fig. 1, Fig. 1 is the structural schematic diagram of a kind of electronic equipment 1000 provided by the present application.
The application electronic equipment 1000 can be any equipment for having communication and store function, such as: tablet computer, hand
Mechanical, electrical sub- reader, remote controler, personal computer (Personal Computer, PC), laptop, mobile unit, net
The equipment such as network TV, wearable device.
Electronic equipment 1000 includes display screen 100 and controller 200.Controller 200 is electrically connected display screen 100.The application
Middle electrical connection includes that power supply connection is connected with signal.Electronic equipment 1000 further includes shell 300, and display screen 100 is installed on shell
300, controller 200 is contained in inside shell 300.
Referring to Fig. 2, Fig. 2 is the structural schematic diagram of the display screen 100 of electronic equipment 1000 shown in Fig. 1.
Display screen 100 includes hardening coat 1 (Hard coating), liquid crystal layer 2 and substrate 3.Hardening coat 1 and substrate 3
It is oppositely arranged.Liquid crystal layer 2 is between hardening coat 1 and substrate 3.Display is collectively formed in substrate 3, liquid crystal layer 2 and hardening coat 1
Panel.Hardening coat 1 is a kind of diaphragm structure by being formed after curing of coatings.Hardening coat 1 can be bent.Hardening coat 1 has
There is scratch resistant function.High-molecular organic material (also known as polymer or high polymer) can be used in hardening coat 1.
Display panel further includes glue frame 4.Glue frame 4 is between hardening coat 1 and substrate 3.Glue frame 4 is set around liquid crystal layer 2
It sets.
Display screen 100 further includes backlight module 5.Backlight module 5 is located at side of the substrate 3 far from hardening coat 1.Backlight mould
Group 5 is located at the incident side of display panel.Backlight module 5 is for providing backlight light.
It is the structural schematic diagram of the substrate 3 of display screen 100 shown in Fig. 2 in the first embodiment also referring to Fig. 3, Fig. 3.
Substrate 3 includes substrate 31, circuit layer 32 and chromatic filter layer 33.Silicon materials can be used in substrate 31.32 He of circuit layer
Chromatic filter layer 33 is sequentially laminated on substrate 31 towards the side of liquid crystal layer 2.In other words, circuit layer 32 is located at chromatic filter layer 33
Between substrate 31.Circuit layer 32 is used to control the deflection action of liquid crystal in liquid crystal layer 2, so that display panel is by backlight light
Realize display.
Circuit layer 32 includes multiple photoelectric sensors 321, and multiple photoelectric sensors 321 carry user fingerprints letter for incuding
The target light of breath.In the application, the meaning of " plurality " is two or more.After backlight light is reflected by user's finger,
It is capable of forming target light.Since the ridge in finger print lines is different from the reflection case of paddy, pass through analysis target light
The distribution and light intensity of line, can obtain the fingerprint lines of user's finger, so the finger print information of user is carried in target light.
When photoelectric sensor 321 senses light of different sizes, photoelectric effect occurs and generates electric current of different sizes, therefore photoelectricity
Sensor 321 is capable of forming electric signal corresponding with target light after sensing target light.Controller 200 is by dividing
Electric signal is analysed, corresponding fingerprint image can be obtained, to carry out fingerprint recognition.So circuit layer 32 is also used to by multiple
Sensor sensing target light realizes fingerprint recognition with pilot controller 200.
In this application, since multiple photoelectric sensors 321 are arranged in substrate 3, multiple photoelectric sensors 321 collect
At in the display panel of display screen 100, multiple photoelectric sensors 321 are located in the display area of display screen 100, so by more
A photoelectric sensor 321 is formed by fingerprint recognition mould group and can be set in viewing area, and fingerprint recognition mould group is without occupying display
The non-display area space of screen 100, the non-display area of display screen 100 can reduce compared to traditional display screen, and display screen 100 is shown
Show that area can increase compared to traditional display screen, to improve the electronic equipment 1000 of display screen 100 and application display screen 100
Screen accounting.In the application, the screen accounting of electronic equipment 1000 and display screen 100 is larger, or even can be realized full screen display.
Since multiple photoelectric sensors 321 are integrated in the display panel of display screen 100, there is no need to be electronic equipment
1000 fingerprint recognition mould group carries out additional structure design, but also the complete machine assembling of electronic equipment 1000 is easier to realize.
Since the thickness of hardening coat 1 is less than the thickness of conventional substrate 31, the integral thickness of display screen 100 is smaller,
The distance between and shorten multiple photoelectric sensors 321 and user's finger, so that the image quality of fingerprint image is higher, from
And obtain higher accuracy of identification.
In other embodiments, backlight light can also form target light by after user's palm or iris reflex.At this point,
Multiple photoelectric sensors are used to incude the palm lines or iris lines of user, so that electronic equipment obtains palm lines or iris
Lines image, to realize personal recognition or iris recognition
Optionally, the ratio of the thickness of the thickness of hardening coat 1 and substrate 31 is less than 0.5.In other words, the thickness of hardening coat 1
Degree is less than the thickness of the substrate 31 of half.As formed by hardening coat 1 can be solidified by liquid coating, hardening coat
1 thickness can control in lesser range, can preferably meet the display and induction demand of display screen 100.Hardening applies
For the thickness control of layer 1 when being less than the thickness of substrate 31 of half, hardening coat 1 can either meet package requirements, while also can
Improve the display quality and induction accuracy of display screen 100.
It is projection of the circuit layer 32 of display screen 100 shown in Fig. 2 on substrate 31 also referring to Fig. 3 to Fig. 5, Fig. 4
Schematic diagram, Fig. 5 are the schematic diagrames of the part-structure of an identification sub-pixel 10 of display screen 100 shown in Fig. 2.
Circuit layer 32 further includes a plurality of grid line 322, multiple data lines 323 and multiple thin film transistor (TFT)s 324.The application
In, " a plurality of " is meant that two or more.The projection of a plurality of grid line 322 and multiple data lines 323 on substrate 31
Form multiple sub-pixel view fields 310.Projection of multiple thin film transistor (TFT)s 324 on substrate 31 falls into multiple correspondingly
In sub-pixel view field 310.Projection of multiple photoelectric sensors 321 on substrate 31 falls into different sub-pixel view fields
In 310.Substrate 3 further includes multiple pixel electrodes 34.Projection of multiple pixel electrodes 34 on substrate 31 is fallen into correspondingly
In multiple sub-pixel view fields 310.
In this application, the display panel of display screen 100 has multiple sub-pixels.Each sub-pixel is included in first base material 31
On projection fall into part substrate 3, partial liquid crystal layer 2 and partially hardened coating 1 in the same sub-pixel view field 310.
Multiple sub-pixels are located in the viewing area of display screen 100.Sub-pixel can be used in showing picture.Multiple sub-pixels constitute a picture
Plain unit.For example, a pixel unit includes three sub-pixels, three sub-pixels are respectively used to be displayed in red (R), green (G)
And blue (B) picture.In another embodiment, a pixel unit includes four sub-pixels, and four sub-pixels are respectively used to
It is displayed in red (R), green (G), blue (B) and white (W) picture or four sub-pixels and is respectively used to be displayed in red (R), green
Color (G), blue (B) and yellow (Y) picture.
Wherein, include photoelectric sensor 321 in sub-pixel some or all of in multiple sub-pixels, identify sub- picture to be formed
Element 10.It include that (namely whole sub-pixels are identification to photoelectric sensor 321 in whole sub-pixels in a kind of embodiment
Pixel 10), the entire display area of display screen 100 can incude fingerprint, and fingerprint sensed position is unrestricted.Other embodiment party
It include photoelectric sensor 321 (namely part sub-pixel is identification sub-pixel 10) in the sub-pixel of part in formula, display screen 100
Some or certain blocks of display area can incude fingerprint.
Display screen 100 has multiple identification sub-pixels 10.Each identification sub-pixel 10 includes that the projection on substrate 31 is located at
Thin film transistor (TFT) 324, pixel electrode 34 and photoelectric sensor 321 in the same sub-pixel view field 310.
Thin film transistor (TFT) 324 includes grid 3241 (Gate, G, also referred to as gate pole), first end 3242 and second end 3243.
In a kind of embodiment, the first end 3242 of thin film transistor (TFT) 324 is source electrode (Source, S), the second of thin film transistor (TFT) 324
End 3243 is drain electrode (Drain, D).In another embodiment, the first end 3242 of thin film transistor (TFT) 324 is drain electrode, and film is brilliant
The second end 3243 of body pipe 324 is source electrode.
Photoelectric sensor 321 includes input terminal 3211 and output end 3212.Photoelectric sensor 321 is unidirectional device, electric current
It is transmitted in input terminal 3211 on the direction of output end 3212.When photoelectric sensor 321 senses target light, by target light
It is converted into electric signal, electric signal is exported by output end 3212.
In the same identification sub-pixel 10:
The grid 3241 of thin film transistor (TFT) 324 is electrically connected to grid line 322, and grid line 322 corresponds to the identification sub-pixel
10.The signal for being used to open thin film transistor (TFT) 324 can be loaded on grid line 322, with the first end of conducting membrane transistor 324
3242 with second end 3243.The signal for closing thin film transistor (TFT) 324 can be loaded on grid line 322, to disconnect film crystalline substance
The first end 3242 and second end 3243 of body pipe 324.
The first end 3242 of thin film transistor (TFT) 324 is electrically connected to data line 323, and data line 323 corresponds to the identification sub- picture
Element 10.The second end 3243 of thin film transistor (TFT) 324 is electrically connected to pixel electrode 34.When pixel electrode 34 is powered, display screen 100
Pixel capacitance is in electriferous state, and identification sub-pixel 10 is shown.As shown in solid arrow in Fig. 5, when thin film transistor (TFT) 324
When opening, the grayscale signal loaded on data line 323 enters pixel electrode 34 through thin film transistor (TFT) 324, and pixel capacitance electrification is known
Small pin for the case pixel 10 is shown.The display circuit part for identifying sub-pixel 10 includes grid line 322, thin film transistor (TFT) 324, data
Line 323 and pixel capacitance.
Wherein, pixel capacitance includes pixel electrode 34, public electrode (attached drawing is not shown) and is located at pixel electrode 34 and public
Liquid crystal layer 2 between common electrode.Pixel electrode 34 is connected to the second end 3243 of thin film transistor (TFT) 324.Pixel electrode 34 can be with
Side positioned at chromatic filter layer 33 far from circuit layer 32, and thin film transistor (TFT) 324 can be connected to by via hole mode.It is public
Electrode is connected to the public electrode wire of display screen 100 (attached drawing is not shown).Grayscale signal, public electrode are loaded on data line 323
When loading common voltage on line, the both ends of pixel capacitance form pressure difference, and pixel capacitance charges are simultaneously shown.
The circuit layer 32 of substrate 3 further includes a plurality of driving line 325.The input terminal 3211 of photoelectric sensor 321, which is electrically connected, to be driven
Moving-wire 325.The output end 3212 of photoelectric sensor 321 is electrically connected to the second end 3243 of thin film transistor (TFT) 324.Such as void in Fig. 5
Shown in line arrow, when load driver signal on driving line 325, and when thin film transistor (TFT) 324 is opened, photoelectric sensor 321 can be according to
It is converted into electric signal according to the target light received, and electric signal is exported by data line 323.Display screen 100 passes through electric signal
Identify the finger print of user.The identification circuit part of identification sub-pixel 10 includes grid line 322, thin film transistor (TFT) 324, driving
Line 325, photoelectric sensor 321 and data line 323.
In this application, identification sub-pixel 10 is in display circuit part and identification circuit fractional reuse grid line 322, film
Transistor 324 and data line 323, to simplify the circuit of identification sub-pixel 10, so that the circuit structure of identification sub-pixel 10 is more
Simply, cost is relatively low.
It is a kind of driver' s timing figure of the circuit structure shown in Fig. 5 in use state also referring to Fig. 5 and Fig. 6, Fig. 6.
Wherein, the situation of change of signal, driving in grid line 322 corresponding to one of identification sub-pixel 10 are illustrated in Fig. 6
The situation of change of signal in line 325, in data line 323 by the situation of change of the signal of data drive circuit output (such as 3231 institutes
Show) and data line 323 in the situation of change of electric signal is formed by as photoelectric sensor 321 (as shown in 3232).
One frame time of display screen 100 includes display time interval and identification period.The length of display time interval and identification period can
To be configured according to demand.
In display time interval, grid line 322 opens thin film transistor (TFT) 324 for loading the first signal, and data line 323 is used
In load gray scale voltage and it is transmitted to pixel electrode 34, so that identification sub-pixel 10 is shown.Thin film transistor (TFT) 324 can be
N-type or p-type.The application is illustrated so that thin film transistor (TFT) 324 is N-type as an example, then opens the first signal of thin film transistor (TFT) 324
For high level signal.
In the identification period, grid line 322 is for loading second signal (such as high level signal) to open film crystal
Pipe 324, driving line 325 is for load driver signal and is transmitted to photoelectric sensor 321, so that photoelectric sensor 321 is according to mesh
Mark light forms electric signal and is exported by data line 323.
Optionally, the driving signal in the identification period is pulse signal.The variation of the pulse amplitude of electric signal is fed back out
The variation of target light.Controller 200 receives electric signal, and obtains the letter of user fingerprints entrained by optical signal according to electric signal
Breath, to form the fingerprint image of user.
In this application, the timesharing load driver signal on grid line 322, make in display time interval identify sub-pixel 10 into
Row display, identification the period in make identify sub-pixel 10 carry out fingerprint induction, therefore display screen 100 can take into account display function with
Inducing function, to improve the usage experience of user.
Wherein, display screen 100 further includes that gate driving circuit (attached drawing is not shown) and data drive circuit are (attached not shown
Out).A plurality of grid line 322 connects gate driving circuit.Multiple data lines 323 connect data drive circuit.A plurality of driving line 325
It is electrically connected gate driving circuit or data drive circuit.In a kind of embodiment, a plurality of driving line 325 can also be respectively connected to
Gate driving circuit or data drive circuit to realize separately driving, such as drive line by line.In other embodiments, a plurality of drive
Moving-wire 325 is connected to gate driving circuit or data drive circuit after can summarizing to a bus, to realize while drive.
Referring to Fig. 3, multiple photoelectric sensors 321 and the setting of 324 same layer of multiple thin film transistor (TFT)s.At this point, photoelectric sensing
Device 321 and thin film transistor (TFT) 324 can be multiplexed the thickness space of display screen 100, to reduce the integral thickness of display screen 100.
Also, portion's layered structure in thin film transistor (TFT) 324 and portion's layered structure of photoelectric sensor 321 can be shared and be prepared with along with
Technique improves the producing efficiency of display screen 100 to simplify the manufacture craft of display screen 100.
Optionally, the output end of the first end and second end of thin film transistor (TFT) 324 and photoelectric sensor 321 can be by same
One of etch process forming.The second end of thin film transistor (TFT) 324 and the output end of photoelectric sensor 321 are integrally formed.When production,
It can be first laid with complete conductive material layer, then conductive material layer is etched, once to form thin film transistor (TFT) 324
The output end of first end and second end and photoelectric sensor 321.
Referring to Fig. 3, substrate 3 further includes black matrix" 328.Black matrix" 328 is located at the second substrate 31 and circuit layer 32
Between.Projection of the black matrix" 328 on substrate 31 covers projection of multiple thin film transistor (TFT)s 324 on substrate 31.Black square
Battle array 328 can play the role of blocking.
Wherein, substrate 3 further includes insulating layer 329.Insulating layer 329 covers between black matrix" 328 and circuit layer 32
Lid black matrix" 328.
Referring to Fig. 3, chromatic filter layer 33 includes divider wall 331 and multiple colored color blocking blocks 332.Divider wall 331 uses
Light screening material.Divider wall 331 allows through black light.Divider wall 331 forms the multiple fill areas being spaced each other.Multiple colours
Color blocking block 332 is filled in multiple fill areas.Divider wall 331 can reduce the risk that display screen 100 alters light.Each colour color blocking
Color shown by the color of block 332 and its affiliated identification sub-pixel 10 is corresponding.
In other embodiments, divider wall 331 is also omitted on chromatic filter layer 33.In other words, chromatic filter layer 33 includes more
A colour color blocking block 332, chromatic filter layer 33 allows visible light to pass through.
It is the structural schematic diagram of the photoelectric sensor 321 of substrate 3 shown in Fig. 3 also referring to Fig. 3 and Fig. 7, Fig. 7.
Target light is visible light, and the multiple colored color blocking blocks 332 of multiple 321 faces of photoelectric sensor are arranged.In other words, more
A photoelectric sensor 321 is shifted to install with divider wall 331.
Each photoelectric sensor 321 includes the first sensing electrode 3213 stacked gradually, photosensitive layer 3214 and the second sensing electricity
Pole 3215.One of first sensing electrode 3213 and the second sensing electrode 3215 belong to the input terminal of photoelectric sensor 321
3211, another one belongs to the output end 3212 of photoelectric sensor 321.First sensing electrode 3213 is located at photosensitive layer 3214 towards coloured silk
The side of color filtering optical layer 33, the first sensing electrode 3213 use transparent conductive material.Target light can pass through colored color blocking block
332 and first sensing electrode 3213 enter photosensitive layer 3214.Second sensing electrode 3215 is located at photosensitive layer 3214 far from the first sense
It surveys the side of electrode 3213 and covering photosensitive layer 3214, the second sensing electrode 3215 uses light-shielding conductive material.Second sensing electricity
Pole 3215 can block the backlight light issued by backlight module 5, to prevent induction of the backlight light to photoelectric sensor 321
It interferes.
In the present embodiment, when sensing visible light photoelectric effect occurs for the photosensitive layer 3214 of photoelectric sensor 321.For example,
Silicon-rich compound, including but not limited to silicon rich silicon oxide (SiOx), Silicon-rich nitrogen can be used in the photosensitive layer 3214 of photoelectric sensor 321
SiClx (SiNy), silicon-rich silicon oxy-nitride (SiOxNy) etc..At this point, the backlight light that backlight module 5 issues is visible light.
It is that the structure of the substrate 3 of display screen 100 shown in Fig. 2 in a second embodiment is shown also referring to Fig. 8 and Fig. 9, Fig. 8
It is intended to, Fig. 9 is the structural schematic diagram of the photoelectric sensor 321 of substrate 3 shown in Fig. 8.
The present embodiment different from the first embodiment:
Target light is black light, and projection of multiple photoelectric sensors 321 on substrate 31 and divider wall 331 are in substrate
Projection section overlapping on 31.At this point, multiple photoelectric sensors 321 are substantially overlapped with divider wall 331.Multiple photoelectric sensings
Device 321 and multiple divider walls 331 can be multiplexed the space in the length and width of substrate 3, to improve the opening of display screen 100
Rate.
Each photoelectric sensor 321 includes the first sensing electrode 3213 stacked gradually, photosensitive layer 3214 and the second sensing electricity
Pole 3215.First sensing electrode 3213 is located at photosensitive layer 3214 towards the side of chromatic filter layer 33.Second sensing electrode 3215
Side and covering photosensitive layer 3214 positioned at photosensitive layer 3214 far from the first sensing electrode 3213.First sensing electrode 3213 and
Two sensing electrodes 3215 use identical conductive material.At this point, the material variety of display screen 100 is less, display screen can reduce
100 cost.
In the present embodiment, target light is black light.The photosensitive layer 3214 of photoelectric sensor 321 senses black light
Shi Fasheng photoelectric effect.For example, target light can be infrared light, near infrared light, ultraviolet light or into ultraviolet light.Photoelectric sensor
The material of 321 photosensitive layer 3214 can have special corresponding material to infrared ray or near infrared ray for vulcanized lead (PbS) etc.,
Or indium tin zinc oxide (ITZO) or indium gallium zinc oxide (IGZO) etc. have response to ultraviolet light or near ultraviolet ray
Semiconductor material.At this point, the backlight light that backlight module 5 issues includes visible light and black light.
It is the structural representation of the substrate 3 of display screen 100 shown in Fig. 2 in the third embodiment also referring to Figure 10, Figure 10
Figure.
The present embodiment different from the first embodiment:
Circuit layer 32 includes the display circuit layer 326 and identification circuit layer 327 being stacked.Multiple thin film transistor (TFT)s 324
Set on display circuit layer 326.Display circuit layer 326 may also include grid line 322, data line 323.Multiple photoelectric sensors 321
Set on identification circuit layer 327.Identification circuit layer 327 may also include driving line 325.In other embodiments, driving line 325 can also be set
In display circuit layer 326, photoelectric sensor 321 is connected to driving line 325 by via hole.
Display circuit layer 326 is between substrate 31 and identification circuit layer 327.At this point, identification circuit layer 327 closer to
Family finger, so that multiple photoelectric sensors 321 are closer at a distance from user's finger, so that the image quality of fingerprint image is improved,
To obtain higher accuracy of identification.Meanwhile multiple photoelectric sensors 321 will not be shown route and device in circuit layer 326
Blocked, thus in display circuit layer 326 route and device arrangement it is more flexible, be also beneficial to photoelectric sensor 321 reception
Target light.
It is the structural representation of the substrate 3 of display screen 100 shown in Fig. 2 in the fourth embodiment also referring to Figure 11, Figure 11
Figure.
The present embodiment is different from the third embodiment:
Projection and multiple thin film transistor (TFT)s 324 projection on substrate 31 of multiple photoelectric sensors 321 on substrate 31
It partly overlaps.Multiple photoelectric sensors 321 are substantially overlapped with multiple thin film transistor (TFT)s 324.Multiple photoelectric sensors 321 with
Multiple thin film transistor (TFT)s 324 can be multiplexed the space in the length and width of substrate 3, to improve the aperture opening ratio of display screen 100.
Wherein, when divider wall 331 is arranged in chromatic filter layer 33, photoelectric sensor 321 and divider wall 331 are opposite, target
Light is black light.When 33 not set divider wall 331 of chromatic filter layer, target light can be visible light or invisible
Light.
It is the structural representation of the substrate 3 of display screen 100 shown in Fig. 2 in the 5th embodiment also referring to Figure 12, Figure 12
Figure.
The present embodiment is unlike fourth embodiment:
Identification circuit layer 327 is between substrate 31 and display circuit layer 326.Target light is visible light, multiple photoelectricity
Projection of the sensor 321 on substrate 31 is shifted to install with projection of multiple thin film transistor (TFT)s 324 on substrate 31.Multiple photoelectricity
The colored color blocking block 332 of 321 face chromatic filter layer 33 of sensor is arranged.
Wherein, chromatic filter layer 33 may include divider wall 331.Multiple photoelectric sensors 321 are set with the dislocation of divider wall 331
It sets.
It is the structural representation of the substrate 3 of display screen 100 shown in Fig. 2 in the sixth embodiment also referring to Figure 13, Figure 13
Figure.
The present embodiment is unlike fourth embodiment:
Identification circuit layer 327 is between substrate 31 and display circuit layer 326.Target light is black light.Multiple light
Projection of the electric transducer 321 on substrate 31 is Chong Die with projection section of multiple thin film transistor (TFT)s 324 on substrate 31.
Wherein, chromatic filter layer 33 may include divider wall 331.Multiple photoelectric sensors 321 can face divider wall 331 set
It sets.
The embodiment of the present application is described in detail above, specific case used herein to the principle of the application and
Embodiment is expounded, the description of the example is only used to help understand the method for the present application and its core ideas；
In the absence of conflict, the feature in presently filed embodiment and embodiment can be combined with each other；Meanwhile for ability
The those skilled in the art in domain, according to the thought of the application, there will be changes in the specific implementation manner and application range, comprehensive
Upper described, the contents of this specification should not be construed as limiting the present application.
Claims (17)
1. a kind of display screen, which is characterized in that including hardening coat, liquid crystal layer and substrate, the hardening coat and the substrate
It is oppositely arranged, for the liquid crystal layer between the hardening coat and the substrate, the substrate includes substrate, circuit layer and coloured silk
Color filtering optical layer, the circuit layer and the chromatic filter layer are sequentially laminated on the substrate towards the side of the liquid crystal layer, institute
Stating circuit layer includes multiple photoelectric sensors, and the multiple photoelectric sensor is used to incude the target light for carrying user fingerprints information
Line.
2. display screen as described in claim 1, which is characterized in that the thickness of the thickness of the hardening coat and the substrate
Than less than 0.5.
3. display screen as described in claim 1, which is characterized in that the circuit layer further includes a plurality of grid line, a plurality of data
Line and multiple thin film transistor (TFT)s, a plurality of grid line and the projection of the multiple data lines on the substrate form multiple sons
Pixel projection region, the projection of the multiple thin film transistor (TFT) on the substrate fall into the multiple sub-pixel correspondingly
In view field, the projection of the multiple photoelectric sensor on the substrate falls into the different sub-pixel view fields
In.
4. display screen as claimed in claim 3, which is characterized in that the substrate further includes multiple pixel electrodes, the multiple
The projection of pixel electrode on the substrate is fallen into correspondingly in the multiple sub-pixel view field；The circuit layer is also
Including a plurality of driving line；
The display screen has multiple identification sub-pixels, each identification sub-pixel include projection on the substrate be located at it is same
The thin film transistor (TFT), the pixel electrode and the photoelectric sensor in one sub-pixel view field are described thin
The grid of film transistor is electrically connected to the grid line, and the first end of the thin film transistor (TFT) is electrically connected to the data line, institute
The second end for stating thin film transistor (TFT) is electrically connected to the pixel electrode, and the input terminal of the photoelectric sensor is electrically connected the driving
Line, the output end of the photoelectric sensor are electrically connected to the second end of the thin film transistor (TFT).
5. display screen as claimed in claim 4, which is characterized in that a frame time of the display screen includes display time interval and knowledge
The other period；
In the display time interval, the grid line is for loading the first signal to open the thin film transistor (TFT), the data
Line is for loading gray scale voltage and being transmitted to the pixel electrode, so that the identification sub-pixel is shown；
In the identification period, the grid line is for loading second signal to open the thin film transistor (TFT), the driving
Line is for load driver signal and is transmitted to the photoelectric sensor, so that the photoelectric sensor is linear according to the target light
It is exported at electric signal and by the data line.
6. the display screen as described in any one of claim 3 to 5, which is characterized in that the substrate further includes black matrix",
For the black matrix" between the substrate and the circuit layer, the projection of the black matrix" on the substrate covers institute
State the projection of multiple thin film transistor (TFT)s on the substrate.
7. display screen as claimed in claim 6, which is characterized in that the substrate further includes insulating layer, and the insulating layer is located at
Between the black matrix" and the circuit layer, and cover the black matrix".
8. the display screen as described in any one of claim 3 to 5, which is characterized in that the chromatic filter layer includes isolation
Wall and multiple colored color blocking blocks, the divider wall use light screening material, and the divider wall forms the multiple fill areas being spaced each other,
The multiple colour color blocking block is filled in the multiple fill area.
9. display screen as claimed in claim 8, which is characterized in that the target light is visible light, the multiple photoelectric transfer
The multiple colored color blocking block setting of sensor face.
10. display screen as claimed in claim 9, which is characterized in that each photoelectric sensor includes first stacked gradually
Sensing electrode, photosensitive layer and the second sensing electrode, first sensing electrode are located at the photosensitive layer towards the colorized optical filtering
The side of layer, first sensing electrode use transparent conductive material, and it is separate that second sensing electrode is located at the photosensitive layer
The side of the first sensing electrode and covering photosensitive layer, second sensing electrode use light-shielding conductive material.
11. display screen as claimed in claim 8, which is characterized in that the target light is black light, the multiple photoelectricity
The projection of sensor on the substrate is Chong Die with the projection section of the divider wall on the substrate.
12. display screen as claimed in claim 11, which is characterized in that each photoelectric sensor includes first stacked gradually
Sensing electrode, photosensitive layer and the second sensing electrode, first sensing electrode are located at the photosensitive layer towards the colorized optical filtering
The side of layer, second sensing electrode are located at side of the photosensitive layer far from first sensing electrode and the covering light
Photosensitive layer, first sensing electrode and second sensing electrode use identical conductive material.
13. the display screen as described in any one of claim 3 to 5, which is characterized in that the multiple photoelectric sensor and institute
State multiple thin film transistor (TFT) same layer settings.
14. the display screen as described in any one of claim 3 to 5, which is characterized in that the circuit layer includes being stacked
Display circuit layer and identification circuit layer, the multiple thin film transistor (TFT) be set to the display circuit layer, the multiple photoelectric transfer
Sensor is set to the identification circuit layer.
15. display screen as claimed in claim 14, which is characterized in that the display circuit layer is located at the substrate and the knowledge
Between other circuit layer, the projection of the multiple photoelectric sensor on the substrate and the multiple thin film transistor (TFT) are in the base
Projection section overlapping on material.
16. display screen as claimed in claim 14, which is characterized in that the identification circuit layer is located at the substrate and shows with described
Show between circuit layer；
The target light is visible light, and the projection of the multiple photoelectric sensor on the substrate and the multiple film are brilliant
The projection of body pipe on the substrate shifts to install；
Or, the target light be black light, the projection of the multiple photoelectric sensor on the substrate with it is the multiple
The projection section overlapping of thin film transistor (TFT) on the substrate.
17. a kind of electronic equipment, which is characterized in that including display described in any one of controller and claim 1 to 16
Screen, the controller are electrically connected the display screen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821225262.8U CN208654487U (en) | 2018-07-31 | 2018-07-31 | Display screen and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821225262.8U CN208654487U (en) | 2018-07-31 | 2018-07-31 | Display screen and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208654487U true CN208654487U (en) | 2019-03-26 |
Family
ID=65787877
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821225262.8U Expired - Fee Related CN208654487U (en) | 2018-07-31 | 2018-07-31 | Display screen and electronic equipment |
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| CN (1) | CN208654487U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110222620A (en) * | 2019-05-30 | 2019-09-10 | 武汉华星光电技术有限公司 | A kind of display panel |
-
2018
- 2018-07-31 CN CN201821225262.8U patent/CN208654487U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110222620A (en) * | 2019-05-30 | 2019-09-10 | 武汉华星光电技术有限公司 | A kind of display panel |
| WO2020237912A1 (en) * | 2019-05-30 | 2020-12-03 | 武汉华星光电技术有限公司 | Display panel |
| US11295107B2 (en) | 2019-05-30 | 2022-04-05 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display panel |
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