CN208580768U - White light LEDs and display device - Google Patents
White light LEDs and display device Download PDFInfo
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- CN208580768U CN208580768U CN201821227938.7U CN201821227938U CN208580768U CN 208580768 U CN208580768 U CN 208580768U CN 201821227938 U CN201821227938 U CN 201821227938U CN 208580768 U CN208580768 U CN 208580768U
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Abstract
The application provides a kind of white light LEDs and display device.White light LEDs include: LED support, and the LED support is bowl structure；It is arranged at the bottom surface of the LED support, the LED chip within the LED support bowl cavity；It is sequentially coated on the LED chip, the quantum dot layer and phosphor powder layer within the LED support bowl cavity；The phosphor powder layer includes decentralized medium and fluorescent powder.In the white light LEDs of the application, by covering phosphor powder layer on quantum dot layer and controlling the content of quantum dot in quantum dot layer, the service life of white light LEDs can be effectively increased.
Description
Technical field
The application belongs to technical field of semiconductor illumination more particularly to a kind of white light LEDs and display device.
Background technique
Quantum dot has many advantages, such as continuous controllable, the luminous efficiency height of launch wavelength and half-wave width, therefore in high colour gamut
Backlight display field has broad application prospects.The backlight in current quantum dot field is based primarily upon quantum dot pipe, quantum dot film
With On-Chip type quantum dot tri- kinds of forms of LED.Quanta point material is directly packaged in containing LED by On-Chip type quantum dot LED
In the LED support of chip, dosage is few and the system integration is easy, and is a kind of ideal packing forms.
However, the stability of quantum dot is influenced very greatly by steam and oxygen, therefore measured in On-Chip type quantum dot LED
Son point is more easily damaged, and causes the service life of LED component lower.
Utility model content
In view of the above technical problems, the application provides a kind of white light LEDs, to increase existing On-Chip type quantum dot LED device
The lower problem of the service life of part
According to the one aspect of the application, a kind of white light LEDs are provided, comprising: LED support, the LED support are bowl knot
Structure；It is arranged at the bottom surface of the LED support, the LED chip within the LED support bowl cavity；It is sequentially coated on
Quantum dot layer and phosphor powder layer on the LED chip, within the LED support bowl cavity；The phosphor powder layer
Including decentralized medium and fluorescent powder.
Preferably, in the phosphor powder layer, the content of the fluorescent powder is 50wt%~80wt%.
Preferably, the fluorescent powder includes at least one of silicate, aluminate, phosphate, nitride, fluoride.
Preferably, the decentralized medium includes poly- epoxy compounds, poly-organosilicon class compound, polyurethanes compound
At least one of.
Preferably, the phosphor powder layer with a thickness of 50 μm -300 μm.
Preferably, in the quantum dot layer, the content of the quantum dot is in 30wt%~100wt%.
Preferably, the content of the quantum dot is in 60wt%~90wt%.
Preferably, under the excitation of 365nm light, the quantum dot layer wavelength of transmitted light is located at 630nm~660nm, the fluorescence
Bisque wavelength of transmitted light is located at 520nm~540nm.
Preferably, encapsulated layer is additionally provided on the phosphor powder layer, the encapsulated layer is covered in the top of the LED support
Face.
According to the one aspect of the application, a kind of display device is provided, the backlight of the display device includes above-mentioned white
Light LED.
The utility model has the advantages that in the white light LEDs of the application, it, can be effective by covering phosphor powder layer on quantum dot layer
Increase the service life of white light LEDs.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of white light LEDs in the application one embodiment；
Fig. 2 is the structural schematic diagram of white light LEDs in another embodiment of the application.
Specific embodiment
Below in conjunction with the application embodiment, technical solutions in the embodiments of the present application is described in detail.It answers
It is noted that described embodiment is only a part of embodiment of the application, rather than whole embodiments.
In the specific embodiment of the application, as shown in Figure 1, white light LEDs include LED support 1, LED support 1 is
Bowl structure；It is arranged at 1 bottom surface of LED support, and is located at the LED chip 2 within 1 bowl cavity of LED support；It is sequentially coated on
Quantum dot layer 3 and phosphor powder layer 4 on LED chip 2, within 1 bowl cavity of LED support；Phosphor powder layer 4 includes dispersion
Medium 41 and fluorescent powder 42.
Fluorescent powder 42 is inorganic material, and decentralized medium 41 is polymer material.Due to the thermal expansion coefficient of inorganic material
Much smaller than the thermal expansion coefficient of polymer material, therefore, after fluorescent powder 42 is dispersed in decentralized medium 41, fluorescent powder can be made
The thermal expansion coefficient of layer 4 is less than the thermal expansion coefficient of decentralized medium 41.Inventors have found that when covering fluorescence on quantum dot layer 3
When bisque 4, in white light LEDs in use, extraneous steam or oxygen can be effectively isolated to quantum dot layer 3 in phosphor powder layer 4
Infiltration, to increase the service life of quanta point material.
LED chip 2 emits blue light in the application, and under the excitation of blue light, quantum dot layer 3 emits feux rouges or green light, glimmering
Light bisque 4 emits green light or feux rouges, to obtain white light LEDs.
In a specific embodiment, in phosphor powder layer 4, the content of fluorescent powder 42 is 50wt%~80wt%.Invention
People's discovery, when the content of fluorescent powder 42 in phosphor powder layer 4 is less than 50wt%, fluorescent powder 42 cannot effectively reduce phosphor powder layer
4 thermal expansion coefficient；And when the content of fluorescent powder 42 is greater than 80wt%, it, can not since the content of decentralized medium 41 is too small
Play effective water oxygen barriering effect.Therefore, the content of fluorescent powder 42 is preferably in 50wt%~80wt%.
In one embodiment, fluorescent powder 42 include silicate, aluminate, phosphate, nitride, in fluoride at least
It is a kind of.Specifically, fluorescent powder 42 includes but is not limited to: M2SiO4:Eu2+(M=Ca, Sr, Ba), M3SiO5:Eu2+(M=Ca,
Sr,Ba)、AlON:Mn2+、Y3Al5O12:Ce3+、Tb3Al5O12:Ce3+、Lu3Al5O12:Ce3+、(Sr,Ca)AlSiN3:Eu2+、
M2Si5N8(M=Ca, Sr, Ba), SrSiN2、SrAlSi4N7、SrLi2Si2N4、AxMFy:Mn4+(A=Li, Na, K, Ca, Sr, Ba, M
=Si, Al, Y, Sc).
In one embodiment, decentralized medium 41 includes poly- epoxy compounds, poly-organosilicon class compound, polyurethanes
At least one of compound.When decentralized medium 41 selects above compound, the water oxygen resistance of phosphor powder layer 4 can be effectively increased
Every ability.
In one embodiment of the application, phosphor powder layer 4 with a thickness of 50 μm~300 μm.The thickness of phosphor powder layer 4 is excellent
It is selected in 100 μm~200 μm.
Quantum dot includes but is not limited to IIB-VIA compounds of group, IIIA-VA compounds of group, IB-IIIA- in the application
Group VIA compound and perovskite.Specifically, quantum dot can for CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe,
HgTe、MgSe、MgS、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、
CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、MgZnSe、MgZnS、HgZnTeS、
CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe、
GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb、GaNP、GaNAs、GaNSb、GaPAs、
GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InNP、InNAs、InNSb、InPAs、InPSb、GaAlNP、
GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、
InAlNP、InAlNAs、InAlNSb、InAlPAs、InAlPSb、CuInS2、CsPbX3(X=Cl, Br, I), CH3NH3PbX3(X=
At least one of Cl, Br, I), but not limited to this.The average-size of quantum dot is preferably in 1nm~20nm.For ability
For field technique personnel, it is to be understood that in order to increase the stability of quantum dot, quantum dot is usually designed to core-shell structure
Or alloy structure, such as InP/ZnS quantum dot, CdSe/ZnS quantum dot, CdZnSeS/ZnS quantum dot.
In one preferred embodiment of the application, in quantum dot layer 3 content of quantum dot 30wt%~
100wt%, inventors have found that the quantum dot content of high concentration has beneficial effect to the stability of quantum dot, when quantum dot layer 3
When the content of middle quantum dot is less than 30wt%, the service life of white light LED part can be decreased obviously.
In a specific embodiment, the content of the quantum dot in quantum dot layer 3 is 100%, i.e., in quantum dot layer 3
Quantum dot is contained only, and without containing other ingredients in addition to quantum dot.When the content of the quantum dot in quantum dot layer 3 is not equal to
Polymer decentralized medium when 100%, in quantum dot layer 3 also containing dispersion quantum dot.Polymer decentralized medium is selected from still not
It is defined in poly- epoxy compounds, poly-organosilicon class compound, polyurethanes compound.It is furthermore preferred that in quantum dot layer 3, amount
The content of son point is in 60wt%~90wt%.
In order to obtain white light LEDs, LED chip 2 emits blue light, the blue light of preferred emission 365nm wavelength.In 365nm light
Under excitation, 3 wavelength of transmitted light of quantum dot layer is preferably placed at 630nm~660nm, 4 wavelength of transmitted light of phosphor powder layer be located at 520nm~
540nm, so that compound obtain white light.
As shown in Fig. 2, in a specific embodiment, the service life of white light LEDs in order to further increase, at one
In embodiment, encapsulated layer 5 is additionally provided on phosphor powder layer 4, encapsulated layer 5 is covered in the top surface of LED support 1, to realize
To white light LEDs.The constituent material of encapsulated layer 5 includes but is not limited to AlN, Al2O3、SiO、SiO2、Si3N4Or SiON.
In one embodiment of the application, a kind of display device is provided, the backlight of display device includes as above white
Light LED.After the white light that white light LEDs generate is by liquid crystal, color film, it can obtain display image.
Although inventor has done more detailed elaboration to the technical solution of the application and has enumerated, it should be understood that for
For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious
, cannot all be detached from the essence of the application spirit, the term occurred in the application be used for elaboration to technical scheme and
Understand, the limitation to the application can not be constituted.
Claims (10)
1. a kind of white light LEDs characterized by comprising
LED support, the LED support are bowl structure；
It is arranged at the bottom surface of the LED support, the LED chip within the LED support bowl cavity；
It is sequentially coated on the LED chip, the quantum dot layer and fluorescent powder within the LED support bowl cavity
Layer；
The phosphor powder layer includes decentralized medium and fluorescent powder.
2. white light LEDs according to claim 1, which is characterized in that in the phosphor powder layer, the content of the fluorescent powder is
50wt%~80wt%.
3. white light LEDs according to claim 2, which is characterized in that the fluorescent powder be silicate, aluminate, phosphate,
Nitride or fluoride.
4. white light LEDs according to claim 2, which is characterized in that the decentralized medium is poly- epoxy compounds, gathers
Organosilicon compound or polyurethanes compound.
5. white light LEDs according to claim 2, which is characterized in that the phosphor powder layer with a thickness of 50 μm~300 μm.
6. white light LEDs according to claim 1, which is characterized in that in the quantum dot layer, the content of the quantum dot exists
30wt%~100wt%.
7. white light LEDs according to claim 6, which is characterized in that the content of the quantum dot is in 60wt%~90wt%.
8. according to white light LEDs described in claim 1, which is characterized in that under the excitation of 365nm light, the quantum dot layer emits light wave
Long to be located at 630nm~660nm, the phosphor powder layer wavelength of transmitted light is located at 520nm~540nm.
9. white light LEDs according to claim 1, which is characterized in that be additionally provided with encapsulated layer, institute on the phosphor powder layer
State the top surface that encapsulated layer is covered in the LED support.
10. a kind of display device, which is characterized in that the backlight of the display device includes any described in claim 1 to 9
White light LEDs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821227938.7U CN208580768U (en) | 2018-08-01 | 2018-08-01 | White light LEDs and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821227938.7U CN208580768U (en) | 2018-08-01 | 2018-08-01 | White light LEDs and display device |
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| CN208580768U true CN208580768U (en) | 2019-03-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922958A (en) * | 2018-08-01 | 2018-11-30 | 苏州星烁纳米科技有限公司 | White light LEDs and display device |
-
2018
- 2018-08-01 CN CN201821227938.7U patent/CN208580768U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922958A (en) * | 2018-08-01 | 2018-11-30 | 苏州星烁纳米科技有限公司 | White light LEDs and display device |
| CN108922958B (en) * | 2018-08-01 | 2024-03-15 | 苏州星烁纳米科技有限公司 | White light LED and display device |
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