CN208551778U - A kind of fingertip pulse wave detector based on flexible PIN photodiode - Google Patents
A kind of fingertip pulse wave detector based on flexible PIN photodiode Download PDFInfo
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- CN208551778U CN208551778U CN201721286613.1U CN201721286613U CN208551778U CN 208551778 U CN208551778 U CN 208551778U CN 201721286613 U CN201721286613 U CN 201721286613U CN 208551778 U CN208551778 U CN 208551778U
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Abstract
A kind of fingertip pulse wave detector based on flexible PIN photodiode, it include control unit, and the filter circuit being sequentially connected in series by data/address bus, amplifying circuit, A/D conversion module and processing host, it is additionally provided with and detects fingerstall in the pulse wave for acquiring pulse wave signal on finger for covering to wear, the input terminal of the pulse wave detection fingerstall connects the output end of described control unit by control bus, the output end of the pulse wave detection fingerstall connects the input terminal of the filter circuit by data/address bus, the output end of the processing host connects the input terminal of described control unit by control bus.The utility model has the characteristics that area is small, simple and light, price is low; it can be directly attached to around finger; detection accuracy, response speed are greatly improved, and reduces the cost of kymoscope, while reducing the influence for test object finger normal activity.
Description
Technical field
The utility model relates to a kind of fingertip pulse wave detectors.Two pole of flexibility PIN photoelectricity is based on more particularly to one kind
The fingertip pulse wave detector of pipe.
Background technique
Pulse wave is that blood stream pressure is propagated along entire arterial system and formed during the contraction of aorta and diastole
A kind of wave.The integrated information of its form showed, intensity, rate and the rhythm and pace of moving things etc., largely reflects people
Many pathophysiologic features in the vascular system of body-centered, such as: heart rate, blood oxygen saturation, intravascular volume variation, vascular wall elasticity
Deng.So pulse wave is clinically widely used as a kind of initial stage detection means of cardiovascular disease.
Currently used some detection means have:
1, tonometry: what Chinese medicine felt the pulse application is this principle.The realization of this measurement method is relatively simple, but
It is to rely on pressure type detector made by this principle often larger by limb motion interference, measurement accuracy is low；
2, bridge test method: this method is to complete arteries and veins by the detection of human body resistance variation in pulse wave communication process
It fights wave measurement.This mode is not related to other signals to the step of converting of electric signal, but will receive other biological electric signal
The interference of (such as: electrocardio), and also need to increase some electromagnetic shielding means to reach higher detection accuracy；
3, laser or ultrasonic doppler measurements method: this mode is detected using Doppler effect, is four kinds of sides
It is the most accurate in formula, but equipment is huge and expensive, is not suitable for family's popularization；
4, photovoltaic measurement: photoelectric measurement is divided into transmission-type and two kinds reflective again.Transmission-type measurement transmitting light source with
Light-sensitive device being equidistant and being arranged symmetrically, and received is finger tip transmitted light, can preferably measure heart rate.Reflective survey
The transmitting light source and light-sensitive device of amount are located at the same side, and received is blood diffusing reflection light, can more accurately measure intravascular
The variation of volume.The pulse wave that photoelectric measurement mode obtains is more accurate, and equipment is simple, promotes convenient for a wide range of.
Patent CN1442111 proposes a kind of transmission-type detection method, improves the data resolution of test equipment, and set
It is standby simply to be used convenient for family.But its probe is not bonded finger tip, can still introduce the interference of external veiling glare and air dielectric and
The accuracy of data is influenced, while hard measuring probe also will affect the normal activity of patient's finger.
Summary of the invention
Technical problem to be solved by the utility model is to provide one kind can carry out high-precision pulse wave detection, into
And obtain the fingertip pulse wave detection based on flexible PIN photodiode of the information such as the heart rate of test object, blood oxygen saturation
Device.
The technical scheme adopted by the utility model is a kind of fingertip pulse wave inspection based on flexible PIN photodiode
Device is surveyed, includes control unit, and the filter circuit, amplifying circuit, the A/D modulus of conversion that are sequentially connected in series by data/address bus
Block and processing host are additionally provided with and detect fingerstall, the pulse in the pulse wave for acquiring pulse wave signal on finger for covering to wear
The input terminal that wave detects fingerstall connects the output end of described control unit by control bus, and the pulse wave detects the defeated of fingerstall
Outlet connects the input terminal of the filter circuit by data/address bus, and the output end of the processing host is connected by control bus
The input terminal of described control unit.
The pulse wave detection fingerstall includes the fingerstall cover for covering the opaque shielding action on finger,
And it is fixed on the Photoelectric Detection list for the luminescence unit of illumination and for acquiring pulse wave signal on the inside of the fingerstall cover
Member, wherein the photodetector unit includes that the first flexible optoelectronic diode, the second flexible optoelectronic diode and first are soft
Property thin film transistor (TFT), the plus earth of the first flexible optoelectronic diode and the second flexible optoelectronic diode, cathode connection the
The drain electrode of one flexible thin-film transistor, the grid and source electrode of first flexible thin-film transistor are separately connected the filter circuit
Input terminal；The luminescence unit includes the second flexible thin-film transistor and third flexible thin-film transistor and first
Flexible light-emitting diodes, the second Flexible light-emitting diodes, third Flexible light-emitting diodes, the 4th Flexible light-emitting diodes and extension
It is single that the grid and source electrode of light source, second flexible thin-film transistor and third flexible thin-film transistor are separately connected the control
The output end of member, the drain electrode of second flexible thin-film transistor are separately connected the first Flexible light-emitting diodes and the 4th flexible hair
The anode of optical diode, the third flexible thin-film transistor drain electrode is separately connected the second Flexible light-emitting diodes and third is flexible
The anode of light emitting diode, first Flexible light-emitting diodes, the second Flexible light-emitting diodes, third Flexible light-emitting diodes
It is grounded with the cathode of the 4th Flexible light-emitting diodes, the expansion light source is located at by first Flexible light-emitting diodes, second
The center for the rectangular shape that Flexible light-emitting diodes, third Flexible light-emitting diodes, the 4th Flexible light-emitting diodes are surrounded.
The specific structure of the photodetector unit includes the first PET plastic substrate and is arranged in the first PET
The first SU8 material layer on plastic supporting base upper surface is respectively arranged with the first fexible film crystalline substance in the first SU8 material layer
The structure of the structure of body pipe and the first flexible optoelectronic diode and the second flexible optoelectronic diode, first fexible film are brilliant
Body pipe is separately connected the first flexible optoelectronic diode and the second flexible optoelectronic diode, and the connection control by interconnecting metal
Unit and filter circuit processed.
The structure of first flexible thin-film transistor includes to be disposed side by side on the first SU8 material layer upper surface
On the first monocrystalline silicon thin film N-doped zone, the first monocrystalline silicon thin film undoped with area and the second monocrystalline silicon thin film N-doped zone,
The first source electrode is provided in the first monocrystalline silicon thin film N-doped zone, first monocrystalline silicon thin film is undoped with Qu Shangtong
It crosses the first grid oxide layer and is provided with first gate electrode, be provided with the first drain electrode in the second monocrystalline silicon thin film N-doped zone,
In, the source electrode passes through interconnection metal connection signal output port, the input of the signal output port connection filter circuit
End, the gate electrode connect first switch control port, the output end of the switch control port connection control unit, the leakage
Electrode connects the first flexible optoelectronic diode and the second flexible optoelectronic diode by interconnection metal.
The structure of the first flexible optoelectronic diode and the second flexible optoelectronic diode includes to be disposed side by side on institute
Third monocrystalline silicon thin film N-doped zone on the first SU8 material layer upper surface, the second monocrystalline silicon thin film are stated undoped with area, monocrystalline
Silicon thin film P-doped zone, third monocrystalline silicon thin film are undoped with area and the 4th monocrystalline silicon thin film N-doped zone, the third monocrystalline
It is provided with the first area N electrode in silicon thin film N-doped zone, the area P electrode, institute are provided in the monocrystalline silicon thin film P-doped zone
It states and is provided with the 2nd area N electrode in the 4th monocrystalline silicon thin film N-doped zone, the area P electrode constitutes anode and passes through interconnection metal
It is grounded with ground terminal, the first area the N electrode and the 2nd area N electrode constitute cathode and connect the first fexible film by interconnection metal
First drain electrode of transistor.
Second flexible thin-film transistor is identical with third flexible thin-film transistor structure, includes the 2nd PET
Plastic base and the 2nd SU8 material layer being arranged on the second PET plastic substrate upper surface, are disposed side by side on described second
The 5th monocrystalline silicon thin film N-doped zone, the 4th monocrystalline silicon thin film on SU8 material layer upper surface is undoped with area and the 6th monocrystalline silicon
Thin-film n-type doped region is provided with the second source electrode in the 5th monocrystalline silicon thin film N-doped zone, and the 4th monocrystalline silicon is thin
Film is arranged in the 6th monocrystalline silicon thin film N-doped zone undoped with the second gate electrode is provided with by the second grid oxide layer in area
There is the second drain electrode, wherein second source electrode connects external power interface, the second gate electricity by the second interconnection metal
Pole connects second switch control port, the output end of the second switch control port connection control unit, second electric leakage
Pole connects corresponding first Flexible light-emitting diodes, the second Flexible light-emitting diodes, third flexibility hair by the second interconnection metal
The anode of optical diode and flexible four light emitting diodes.
A kind of fingertip pulse wave detector based on flexible PIN photodiode of the utility model, entirely detects fingerstall
It is made of flexible devices such as thin film flexible PIN photodiodes, has the characteristics that area is small, simple and light, price is low.
More importantly due to its flexible good mechanical properties, this detector can be directly attached to around finger, mention significantly
High measurement accuracy, response speed, and the cost of kymoscope is reduced, while reducing for test object finger normal activity
Influence.It only needs to will test fingerstall when the sensors work of the utility model to wear and the detection of pulse wave can be realized in finger tip,
And then it analyzes and obtains the information such as heart rate, the blood oxygen saturation of test object.The detector of the utility model and the stickiness of finger
Well, detection device is simply light, and cost is relatively low, and the influence for tester's finger normal activity is smaller, convenient for promoting.
Detailed description of the invention
Fig. 1 is a kind of overall structure of the fingertip pulse wave detector based on flexible PIN photodiode of the utility model
Block diagram；
Fig. 2 is the structural schematic diagram of pulse wave detection fingerstall in the utility model；
Fig. 3 is the structural schematic diagram of luminescence unit in the utility model pulse wave detection fingerstall；
Fig. 4 is the structural schematic diagram of photodetector unit in the utility model pulse wave detection fingerstall；
Fig. 5 is the side view of flexible thin-film transistor in Fig. 4；
Fig. 6 is the side view of photodiode in Fig. 4；
Fig. 7 is the structural schematic diagram of flexible thin-film transistor in Fig. 3；
Fig. 8 is the side view of Fig. 7.
In figure
101: control unit 102: pulse wave detects fingerstall
103: filter circuit 104: amplifying circuit
105:A/D conversion module 106: processing host
107: data/address bus 108: control bus
1021: fingerstall cover 1022: luminescence unit
1023: photodetector unit 1: third monocrystalline silicon thin film N-doped zone
2: the second monocrystalline silicon thin films are undoped with area 3: monocrystalline silicon thin film P-doped zone
4: third monocrystalline silicon thin film is undoped with 5: the four monocrystalline silicon thin film N-doped zone of area
6: ground terminal 7: signal output port
8: the first monocrystalline silicon thin film N-doped zone, 9: the first monocrystalline silicon thin film is undoped with area
10: the second monocrystalline silicon thin film N-doped zones 11: switch control port
12: interconnection 13: the first PET plastic substrate of metal
14: the one SU8 material layer, 15: the one area N electrode
17: the two area N electrode of the area 16:P electrode
18: the first source electrodes 19: first gate electrode
20: the first grid oxide layer, 21: the first drain electrode
22: the five monocrystalline silicon thin film N-doped zone, 23: the four monocrystalline silicon thin film is undoped with area
24: the six monocrystalline silicon thin film N-doped zones 25: second switch control port
26: the second interconnection 27: the second PET plastic substrates of metal
28: the two SU8 material layer, 29: the second source electrode
30: the second gate electrode, 31: the second grid oxide layer
32: the second drain electrodes 33: external power interface
Specific embodiment
Below with reference to embodiment and attached drawing to a kind of finger tip pulse based on flexible PIN photodiode of the utility model
Wave detector is described in detail.
A kind of fingertip pulse wave detector based on flexible PIN photodiode of the utility model, passes through a kind of flexibility
Detection fingerstall is addressed.This fingerstall includes Flexible light-emitting diodes, external supplement light source interface and flexible optoelectronic diode.
Wherein flexible optoelectronic diode section is completed using two flexible silicon thin film PIN lateral photodiodes, the two diodes with
It inserts and refers to that form in parallel is connected, and be connected with a TFT switch, in order to control the switch of detection.Flexible PIN diode it is anti-
To the proportional variation of electric current and optical power, optical wavelength, the quantitative mould of optical power, optical wavelength and photoelectric current can establish by testing
Type.Furthermore when the light of constant wavelength passes through blood, the concentration of blood absorbs with it, the light intensity that decays is also proportional, can
To reflect the structure feature of illuminated part blood.Therefore it will test the photo-signal passed back in fingerstall and analyzed, it can be with
Obtain the waveform of pulse wave.
It Flexible light-emitting diodes part can be using flexible silicon is thin-film led, flexible carbon nano tube light emitting diode
Or flexible Organic Light Emitting Diode etc. is realized.The Flexible light-emitting diodes of two kinds of wavelength, can satisfy built in the utility model
Difference detection needs.It can be used to extend detection light source further, it would be desirable to provide external supplement light source interface, meet special detection wavelength
It needs.
As shown in Figure 1, a kind of fingertip pulse wave detector based on flexible PIN photodiode of the utility model, packet
Control unit 101, and the filter circuit 103, the amplifying circuit 104, A/D that are sequentially connected in series by data/address bus 107 are included
Conversion module 105 and processing host 106 are additionally provided with and refer to for covering to wear in the pulse wave detection for acquiring pulse wave signal on finger
The input terminal of set 102, the pulse wave detection fingerstall 102 connects the output of described control unit 101 by control bus 108
The output end at end, the pulse wave detection fingerstall 102 connects the input terminal of the filter circuit 103, institute by data/address bus 107
The output end for stating processing host 106 connects the input terminal of described control unit 101 by control bus 108.
As shown in Figure 2 and Figure 3, pulse wave detection fingerstall 102 includes for covering opaque on finger
The fingerstall cover 1021 of shielding action, and it is fixed on the luminescence unit 1022 and use for illumination of 1021 inside of fingerstall cover
In the photodetector unit 1023 of acquisition pulse wave signal, wherein as shown in Fig. 2, the photodetector unit 1023 includes
There are the first flexible optoelectronic diode D1, the second flexible optoelectronic diode D2 and the first flexible thin-film transistor T1, described first is soft
Property photodiode D1 and the second flexible optoelectronic diode D2 plus earth, cathode connects the first flexible thin-film transistor T1
Drain electrode, the grid and source electrode of the first flexible thin-film transistor T1 are separately connected the input terminal of the filter circuit 103；Such as figure
Shown in 3, the luminescence unit 1022 includes the second flexible thin-film transistor T2 and third flexible thin-film transistor T3, and
First Flexible light-emitting diodes D3, the second Flexible light-emitting diodes D4, third Flexible light-emitting diodes D5, the 4th flexible luminous two
Pole pipe D6 and in order to meet special wavelength needs expansion light source G, the second flexible thin-film transistor T2 and third flexible thin
The grid and source electrode of film transistor T3 are separately connected the output end of described control unit 101, second flexible thin-film transistor
The drain electrode of T2 is separately connected the anode of the first Flexible light-emitting diodes D3 and the 4th Flexible light-emitting diodes D6, and the third is flexible
Thin film transistor (TFT) T3, which drains, is separately connected the anode of the second Flexible light-emitting diodes D4 and third Flexible light-emitting diodes D5, described
First Flexible light-emitting diodes D3, the second Flexible light-emitting diodes D4, third Flexible light-emitting diodes D5 and the 4th are flexible to shine
The cathode of diode D6 is grounded, and the expansion light source G is located at by the first Flexible light-emitting diodes D3, second flexible luminous two
The center for the rectangular shape that pole pipe D4, third Flexible light-emitting diodes D5, the 4th Flexible light-emitting diodes D6 are surrounded.
As shown in figure 4, the specific structure of the photodetector unit 1023 includes the first PET plastic substrate 13 and sets
The first SU8 material layer 14 on 13 upper surface of the first PET plastic substrate is set, is divided in the 2nd SU8 material layer 14
It is not provided with two pole of structure and the first flexible optoelectronic diode D1 and the second flexible optoelectronic of the first flexible thin-film transistor T1
The structure of pipe D2, the first flexible thin-film transistor T1 are separately connected the first flexible optoelectronic diode D1 by interconnecting metal 12
With the second flexible optoelectronic diode D2, and connection described control unit 101 and filter circuit 103.
As shown in Figure 4, Figure 5, the structure of the first flexible thin-film transistor T1 includes to be disposed side by side on described
The first monocrystalline silicon thin film N-doped zone 8, the first monocrystalline silicon thin film on one SU8 material layer, 14 upper surface is undoped with area 9 and second
Monocrystalline silicon thin film N-doped zone 10, is provided with the first source electrode 18 in the first monocrystalline silicon thin film N-doped zone 8, and described
One monocrystalline silicon thin film undoped in area 9 pass through the first grid oxide layer 20 be provided with first gate electrode 19, the second monocrystalline silicon thin film N
The first drain electrode 21 is provided on type doped region 10, wherein the source electrode 18 passes through interconnection 12 connection signal output end of metal
Mouth 7, the signal output port 7 connect the input terminal of filter circuit 103, and the gate electrode 19 connects first switch control port
11, the switch control port 11 connects the output end of control unit 101, and the drain electrode 21 passes through interconnection metal 12 connection the
One flexible optoelectronic diode D1 and the second flexible optoelectronic diode D2.
As shown in figs. 4 and 6, the structure of the first flexible optoelectronic diode D1 and the second flexible optoelectronic diode D2
It include the 1, second list of third monocrystalline silicon thin film N-doped zone being disposed side by side on 14 upper surface of the first SU8 material layer
Polycrystal silicon film is thin undoped with area 4 and the 4th monocrystalline silicon undoped with area 2, monocrystalline silicon thin film P-doped zone 3, third monocrystalline silicon thin film
Film N-doped zone 5 is provided with the first area N electrode 15, the monocrystalline silicon thin film in the third monocrystalline silicon thin film N-doped zone 1
It is provided with the area P electrode 16 in P-doped zone 3, is provided with the 2nd area N electrode in the 4th monocrystalline silicon thin film N-doped zone 5
17, the area P electrode 16 constitutes anode and is grounded by interconnection metal 12 and ground terminal 6, the first area N electrode 15 and the 2nd N
Area's electrode 17 constitutes the first drain electrode 21 that cathode connects the first flexible thin-film transistor T1 by interconnection metal 12.
As shown in Figure 7, Figure 8, the second flexible thin-film transistor T2 and third flexible thin-film transistor T3 structure phase
Together, include second PET plastic substrate 27 and the 2nd SU8 material that is arranged on 27 upper surface of the second PET plastic substrate
The bed of material 28, the 5th monocrystalline silicon thin film N-doped zone the 22, the 4th being disposed side by side on 28 upper surface of the 2nd SU8 material layer
Monocrystalline silicon thin film is undoped with area 23 and the 6th monocrystalline silicon thin film N-doped zone 24, the 5th monocrystalline silicon thin film N-doped zone 22
On be provided with the second source electrode 29, the 4th monocrystalline silicon thin film is provided with second undoped with passing through the second grid oxide layer 31 in area 23
Gate electrode 30 is provided with the second drain electrode 32 in the 6th monocrystalline silicon thin film N-doped zone 24, wherein the second source electricity
Pole 29 connects external power interface 33 by the second interconnection metal 26, and second gate electrode 30 connects second switch control port
25, the second switch control port 25 connects the output end of control unit 101, and second drain electrode 32 passes through the second interconnection
Metal 26 connects corresponding first Flexible light-emitting diodes D3, the second Flexible light-emitting diodes D4, third Flexible light-emitting diodes
The anode of D5 and the 4th Flexible light-emitting diodes D6.
A kind of fingertip pulse wave detector based on flexible PIN photodiode of the utility model, when detection, by fingerstall
It is brilliant that the enclosure controls each fexible film on finger, by control unit (can use 51 single-chip microcontrollers or STM32 microprocessor etc.)
Body pipe and then the beginning for controlling detection.After detection starts, Flexible light-emitting diodes or external light source generate detection light, saturating through finger
It is radiated at after penetrating on flexible optoelectronic diode, light excitation, which generates reversed photoelectric current, can be such that the DC characteristic of flexible optoelectronic diode sends out
Raw corresponding variation.This variation can be admitted in analogy signal processing unit and be filtered and amplify, and then pass processing host
(can use computer) finally exports corresponding pulse wave by processing host, and further analysis obtains the heart of measurand
The information such as rate, blood oxygen saturation.The major function of analogy signal processing unit be signal is amplified and is filtered, and
Improve signal-to-noise ratio.
The utility model, can also be by the thin of this example in the case where other are using needs by taking silicon thin film and PET flexible substrate as an example
Membrane material is changed to other semiconductor materials such as germanium, and substrate material is changed to other flexible materials such as fiber, degradable resin.This is practical
It is novel by taking 2 flexible PIN photodiodes are in parallel as an example, but in actual use in order to improve detection accuracy and sensitivity, and
The quantity of the flexible PIN photodiode of connection can also be increase accordingly.
Claims (6)
1. a kind of fingertip pulse wave detector based on flexible PIN photodiode includes control unit (101), Yi Jitong
Cross filter circuit (103), amplifying circuit (104), A/D conversion module (105) and place that data/address bus (107) is sequentially connected in series
It manages host (106), which is characterized in that be additionally provided with and detect fingerstall in the pulse wave for acquiring pulse wave signal on finger for covering to wear
(102), the input terminal of pulse wave detection fingerstall (102) passes through control bus (108) connection described control unit (101)
The output end of output end, pulse wave detection fingerstall (102) connects the filter circuit (103) by data/address bus (107)
Input terminal, it is described processing host (106) output end by control bus (108) connection described control unit (101) it is defeated
Enter end.
2. a kind of fingertip pulse wave detector based on flexible PIN photodiode according to claim 1, feature exist
In pulse wave detection fingerstall (102) includes for covering the opaque fingerstall cover for playing shielding action on finger
(1021), and be fixed on the inside of the fingerstall cover (1021) for illumination luminescence unit (1022) and for acquiring pulse
The photodetector unit (1023) of wave signal, wherein the photodetector unit (1023) includes the first flexible optoelectronic two
Pole pipe (D1), the second flexible optoelectronic diode (D2) and the first flexible thin-film transistor (T1), two pole of the first flexible optoelectronic
The plus earth of (D1) and the second flexible optoelectronic diode (D2) are managed, cathode connects the leakage of the first flexible thin-film transistor (T1)
Pole, the grid and source electrode of first flexible thin-film transistor (T1) are separately connected the input terminal of the filter circuit (103)；Institute
The luminescence unit (1022) stated includes the second flexible thin-film transistor (T2) and third flexible thin-film transistor (T3), Yi Ji
One Flexible light-emitting diodes (D3), the second Flexible light-emitting diodes (D4), third Flexible light-emitting diodes (D5), the 4th flexible hair
Optical diode (D6) and expansion light source (G), second flexible thin-film transistor (T2) and third flexible thin-film transistor (T3)
Grid and source electrode be separately connected the output ends of described control unit (101), the leakage of second flexible thin-film transistor (T2)
Pole is separately connected the anode of the first Flexible light-emitting diodes (D3) and the 4th Flexible light-emitting diodes (D6), the third flexible thin
Film transistor (T3), which drains, is separately connected the anode of the second Flexible light-emitting diodes (D4) and third Flexible light-emitting diodes (D5),
First Flexible light-emitting diodes (D3), the second Flexible light-emitting diodes (D4), third Flexible light-emitting diodes (D5) and
The cathode of four Flexible light-emitting diodes (D6) is grounded, and the expansion light source (G) is located at by first Flexible light-emitting diodes
(D3), the second Flexible light-emitting diodes (D4), third Flexible light-emitting diodes (D5), the 4th Flexible light-emitting diodes (D6) are enclosed
At rectangular shape center.
3. a kind of fingertip pulse wave detector based on flexible PIN photodiode according to claim 2, feature exist
In, the specific structure of the photodetector unit (1023) include the first PET plastic substrate (13) and setting described the
The first SU8 material layer (14) on one PET plastic substrate (13) upper surface is set respectively in the first SU8 material layer (14)
It is equipped with structure and the first flexible optoelectronic diode (D1) and two pole of the second flexible optoelectronic of the first flexible thin-film transistor (T1)
The structure of (D2) is managed, first flexible thin-film transistor (T1) is separately connected the first flexible optoelectronic two by interconnecting metal (12)
Pole pipe (D1) and the second flexible optoelectronic diode (D2), and connection described control unit (101) and filter circuit (103).
4. a kind of fingertip pulse wave detector based on flexible PIN photodiode according to claim 3, feature exist
In the structure of first flexible thin-film transistor (T1) includes to be disposed side by side on the first SU8 material layer (14)
The first monocrystalline silicon thin film N-doped zone (8), the first monocrystalline silicon thin film on end face is undoped with area (9) and the second monocrystalline silicon thin film N
Type doped region (10) is provided with the first source electrode (18) on the first monocrystalline silicon thin film N-doped zone (8), and described first is single
For polycrystal silicon film undoped with being provided with first gate electrode (19) on area (9) by the first grid oxide layer (20), second monocrystalline silicon is thin
The first drain electrode (21) are provided in film N-doped zone (10), wherein the source electrode (18) passes through interconnection metal (12) connection
Signal output port (7), the input terminal of signal output port (7) connection filter circuit (103), the gate electrode (19) is even
It connects first switch control port (11), the output end of switch control port (11) connection control unit (101), the electric leakage
Pole (21) connects the first flexible optoelectronic diode (D1) and the second flexible optoelectronic diode (D2) by interconnection metal (12).
5. a kind of fingertip pulse wave detector based on flexible PIN photodiode according to claim 3, feature exist
In the structure of the first flexible optoelectronic diode (D1) and the second flexible optoelectronic diode (D2) includes to be disposed side by side on
Third monocrystalline silicon thin film N-doped zone (1), the second monocrystalline silicon thin film on first SU8 material layer (14) upper surface are not mixed
Miscellaneous area (2), monocrystalline silicon thin film P-doped zone (3), third monocrystalline silicon thin film are mixed undoped with area (4) and the 4th monocrystalline silicon thin film N-type
Miscellaneous area (5) is provided with the first area N electrode (15), the monocrystalline silicon thin film P on the third monocrystalline silicon thin film N-doped zone (1)
It is provided with the area P electrode (16) on type doped region (3), is provided with the 2nd area N on the 4th monocrystalline silicon thin film N-doped zone (5)
Electrode (17), the area P electrode (16) constitute anode and pass through interconnection metal (12) and ground terminal (6) ground connection, the first area the N electricity
Pole (15) and the 2nd area N electrode (17) constitute cathode the by interconnection metal (12) connection the first flexible thin-film transistor (T1)
One drain electrode (21).
6. a kind of fingertip pulse wave detector based on flexible PIN photodiode according to claim 2, feature exist
In it includes second that second flexible thin-film transistor (T2) is identical with third flexible thin-film transistor (T3) structure
PET plastic substrate (27) and the 2nd SU8 material layer (28) being arranged on the second PET plastic substrate (27) upper surface, and
Arrange the 5th monocrystalline silicon thin film N-doped zone (22) being arranged on the 2nd SU8 material layer (28) upper surface, the 4th monocrystalline silicon
Film is undoped with area (23) and the 6th monocrystalline silicon thin film N-doped zone (24), the 5th monocrystalline silicon thin film N-doped zone (22)
On be provided with the second source electrode (29), the 4th monocrystalline silicon thin film undoped on area (23) pass through the second grid oxide layer (31) be arranged
Have the second gate electrode (30), be provided with the second drain electrode (32) on the 6th monocrystalline silicon thin film N-doped zone (24), wherein
Second source electrode (29) passes through the second interconnection metal (26) connection external power interface (33), second gate electrode (30)
It connects second switch control port (25), the output end of second switch control port (25) connection control unit (101), institute
It states the second drain electrode (32) and corresponding first Flexible light-emitting diodes (D3), the second flexibility is connected by the second interconnection metal (26)
The anode of light emitting diode (D4), third Flexible light-emitting diodes (D5) and flexible four light emitting diodes (D6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721286613.1U CN208551778U (en) | 2017-09-30 | 2017-09-30 | A kind of fingertip pulse wave detector based on flexible PIN photodiode |
Applications Claiming Priority (1)
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