CN208532963U - 一种抗形变线圈 - Google Patents
一种抗形变线圈 Download PDFInfo
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- CN208532963U CN208532963U CN201820527048.1U CN201820527048U CN208532963U CN 208532963 U CN208532963 U CN 208532963U CN 201820527048 U CN201820527048 U CN 201820527048U CN 208532963 U CN208532963 U CN 208532963U
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- 239000011810 insulating material Substances 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 3
- 230000006698 induction Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
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CN201820527048.1U CN208532963U (zh) | 2018-04-13 | 2018-04-13 | 一种抗形变线圈 |
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CN201820527048.1U CN208532963U (zh) | 2018-04-13 | 2018-04-13 | 一种抗形变线圈 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108425146A (zh) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | 一种降低区熔感应线圈形变的方法及抗形变线圈 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108425146A (zh) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | 一种降低区熔感应线圈形变的方法及抗形变线圈 |
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GR01 | Patent grant | ||
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Effective date of registration: 20191227 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring road No. 12 in Haitai) Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |