CN208521131U - A kind of light source direct imaging focused photoetching device - Google Patents
A kind of light source direct imaging focused photoetching device Download PDFInfo
- Publication number
- CN208521131U CN208521131U CN201820944586.0U CN201820944586U CN208521131U CN 208521131 U CN208521131 U CN 208521131U CN 201820944586 U CN201820944586 U CN 201820944586U CN 208521131 U CN208521131 U CN 208521131U
- Authority
- CN
- China
- Prior art keywords
- source
- imaging
- light emitting
- light
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The utility model proposes a kind of light source direct imaging focused photoetching devices, including light source cabinet, matrix spotlight source device, imager, photofabricated product and exposure desk；LED imaging source is equipped in light-source box body, matrix spotlight source device is equipped with the imaging panel for several light emitting source pixels composition closely arranged in matrix form, and product original route design drawing is produced and for light emitting source pixel with electroluminescence by the parsing imaging of image information processing tool, form point source image, imager is made of several pieces of eyeglasses, object lens are scaled point source image, then are mapped on photofabricated product；The light source direct imaging focused photoetching device, without using egative film or mask plate and the auxiliary of mask stage, greatly reduce the required precision controlled needed for cost and equipment moving, since optical fiber can be used as light emitting source pixel, theory with the imaging pixel point of small to 3-5 μm grade of the limit, can meet the photoetching process requirement of the above precision of middle-end.
Description
Technical field
The utility model relates to the micro-nano technologies photoetching skills such as microelectronics, micro-optics, micro-nano structure and opto-electronic device preparation
Art field, it is integrated for the production of the needs such as PCB route imaging and photo-etching, semiconductor circuits imaging and photo-etching, liquid crystal route imaging and photo-etching
The industry of circuit, more particularly, to a kind of light source direct imaging focused photoetching device.
Background technique
Photoetching technique is the core of IC manufacturing industry, decides the element characteristics size of integrated circuit.Photoetching skill
Art is compensated each by a series of energy of light source, shape control means by light beam transmitted through the mask for drawing line map through object lens
Kind optical parallax, will be mapped on silicon wafer after the proportional diminution of line map, and the imaging scale of different litho machines is different, there is 5:1,
There is 4:1.Then developed using chemical method, obtain being engraved in the circuit diagram (i.e. chip) on silicon wafer；General photoetching process will be through
Go through silicon wafer surface cleaning drying, linging, spin coating photoresist, it is soft dry, alignment exposure, it is rear dry, development, it is hard dry, the processes such as etching.Companion
Continue with semiconductor industry Moore's Law, extreme ultraviolet photolithographic (Extreme Ultraviolet Lithography, EUVL) is public
It is considered most potential Next Generation Lithography.
And light source is one of core component of litho machine.In today of photoetching technique rapid development, used light source
It continuously improves, improve precision: the first generation is 436nm g-line；The second generation is 365nm i-line；The third generation is 248nm
KrF；Forth generation is 193nm ArF；A newer generation is 13.5nm EUV.Currently, in the middle and high end that IC industry uses
Litho machine is using 193nmArF light source and 13.5nmEUV light source.
Extreme ultraviolet photolithographic is a kind of using the EUV light of 13.5nm as the projection lithography technology of operation wavelength, is conventional projection light
Lithography is in the critical point of industrialization to shorter wavelengths of extension.As the fusion of field of industrial manufacturing sophisticated technology, generation
Only have several research institutions and company to grasp this technology in boundary.Currently, the international monopoly situation of EUVL technology is preliminary
It is formed, technology blockage is formd to China, the sales policy in future is also difficult to expect.
The industry that wiring board, liquid crystal display panel, semiconductor, photovoltaic etc. have route production to require.Exposure image technique packet at present
It includes
1) uses traditional egative film；
2) .DMD digital micro-mirror chip is imaged；
3) exposure subsystem scanning etc.；
The core technology of DMD first and exposure subsystem is monopolized by foreign countries.Traditional egative film imaging resolution is limited by egative film
Production, can only achieve 25um, and DMD imaging limit by DMD small eyeglass, practical 10um, exposure subsystem resolution it is also restricted and
Movement and optical accuracy, the 10um of even higher than DMD imaging.
Above-mentioned 3 kinds of prior art schemes not can effectively improve the production requirement of high-precision technique.
Prior art 1:CN 107065444A discloses a kind of photolithography method for preparing close and distant pattern, comprising the following steps:
Coat or spray first in substrate with figuratum pattern articulamentum, secondly coating, spraying or spin coating surface covering, finally by
Ultraviolet light or sunlight or visible or infrared light are irradiated, and obtain close and distant pattern；The material of the substrate be selected from glass,
Any one of metal, alloy, stainless steel, wall, paper, cotton fabric；The pattern articulamentum is that tool is figuratum organic
Silica gel or siloxanes；The surface covering is to have low surface having a size of 10nm~10 μm micro-nano titanium dioxide granule or surface modification
The micro-nano titanium dioxide granule of energy substance.
The technical solution does not need photomask, and preparation method is simple, expands the use scope of photoetching technique, and saves
The energy, and can prepare the pattern of arbitrary dimension, realize low-surface energy substance from supplying, so that extending it uses the longevity
Life, is with a wide range of applications.
Further more, prior art 2:CN 105549340B discloses a kind of roll-to-roll flexible substrate photolithography method and device, lead to
It crosses and exposure transmission of ultraviolet light path and Exposure mode is designed, so that the photoetching of flexible substrate is realized, without tradition
Flexible substrate need to be attached to the processing steps such as photoetching on glass substrate and the last substrate desquamation of technique, on the one hand save work
On the other hand skill equipment cost improves the yield and productive temp of production, the device manufacture craft is simple, can effectively improve production
Beat realizes the quick and high quality photolithographic fabrication of flexible substrate under conditions of lower production cost.
The device is mainly made of ultraviolet source, flexible substrate conveyer system and photoetching gum coating apparatus, and structure is simple, makes
With convenient, convenient for safeguarding and manufacture.
Summary of the invention
The utility model purpose of design is: the case where being required to mask focusing exposure for existing photoetching technique and developing,
We, which design, proposes a kind of light source direct imaging focused photoetching device.Overcoming problem above, imaging resolution is not limited by principle,
Circuit image can be reduced in physics limit to be resolved to close to optical source wavelength, while reducing the time for exposure, improve lithographic accuracy and
Efficiency.
To achieve the above objectives, the present invention adopts the following technical solutions:
A kind of light source direct imaging focused photoetching device, including light source cabinet, matrix spotlight source device, imager, photoetching
Product and exposure desk；
LED imaging source is equipped in the light-source box body, for fixing and supporting the matrix spotlight source device；
The matrix spotlight source device is equipped with the imaging surface for several light emitting source pixels composition closely arranged in matrix form
Plate, the equal alignment light emitting of light emitting source pixel, the imaging panel is made as plane or curved surface, and believes by computer image
Breath handling implement parsing imaging produces product original route design drawing and the simultaneously or one by one distribution for the light emitting source pixel that is related to
Shine, according to image information display and shine form point source image, the practical function of alternative mask；
The imager is made of several pieces of eyeglasses, is preferably but not limited to convex lens, designs 2 kinds of optical paths, includes focal length
Away from and short focus, the point source image (former route design drawing) that the matrix spotlight source device is presented is contracted in proportion by object lens
It is small, then be mapped on the photofabricated product, and object lens compensate various optical parallaxs according to particular optical imaging precision；
The photofabricated product includes but is not limited to copper-clad plate or semi-conductor silicon chip, is attached on the exposure desk, institute
It states photofabricated product and is coated with photosensitive material.
Technical principle: forming image by the former route design drawing image information of analysing integrated circuits at light source, presents
On the imaging panel.Image is incident upon to the lines such as copper-clad plate or the semi-conductor silicon chip for being coated with photosensitive material by imager
Road makes on product, and imaging, which carves, needs route to make route product.
Further, the imager lower part is equipped with photochopper.
Further, the light emitting source pixel can be laser semiconductor light emitting source, LED light emitting source, optical fiber luminescent source
One of, laser semiconductor light emitting source form light source pixel point imaging have superior ray coherence, more conducively propagate and
It focuses；LED light emitting source minimum can arrive 50um, that is, pixel can be close to 50um；Fiber optic conduction light collimation is superior,
Optical fiber can be close to 3um, and light source pixel can be reached close to 3um.
Further, each light emitting source pixel dot shape can be any shape, preferably regular hexagon, regular hexagon
The imaging panel of light emitting source pixel composition is in honeycomb.
Further, light source bottom and the top cooperation of the light emitting source pixel carry out optical concentration collimation encapsulation, bottom
Portion selects concave mirror, and top uses convex lens or Fei Nier lens.
Further, can be suitably filled with optical material between the light emitting source pixel, reduce imaging black area, improve at
As smoothness of curve.
Further, the image information processing tool can be selected Adobe Photoshop, Dreamweaver,
The handling implements such as ExifShow, ACDSee, Turbo Photo.
Further, it is 1:5,1:10,1:50,1:100 and 1:1000 that the object lens, which focus miniature ratio,.
Further, the light source cabinet design has light intensity detector and CCD image detector.
Compared with prior art, implement the light source direct imaging focused photoetching device of the utility model, have beneficial below
Effect:
1. the light source direct imaging focused photoetching device, light source life is long, without using egative film or mask plate and mask stage
Auxiliary, greatly reduce the required precision controlled needed for cost and equipment moving, and promote yields；
2. imaging resolution is not limited by principle, since optical fiber can be used as light emitting source pixel, theory can be with the limit
The imaging pixel point of small to 3-5 μm grade reduces line pattern by imager, light clarity and lines smoothness not by
It influences, meets the photoetching process requirement of the above precision of middle-end；
3. energy of light source can be increased simultaneously to reduce the time for exposure, working efficiency is further increased；
4. the light source direct imaging focused photoetching device amplifies in turn using being exactly projector, light source and imaging are concentrated
To together, substantially reduced projection unit is understood；The autochrome as liquid crystal is also eliminated, most of light is stopped.The light
Source direct imaging principle in the future can be with large area use in wearing product, instead of display screen, because the brightness of this mode can very
Height, plane projection and 3D projection are all advantageous.
Detailed description of the invention
In order to be further understood that the feature and technology contents of the utility model, please refer to practical new below in connection with this
The detailed description and accompanying drawings of type, however, the drawings only provide reference and explanation, is not used to limit the utility model.
Fig. 1 is the operation schematic diagram of the present embodiment light source direct imaging focused photoetching device；
Fig. 2 is the schematic diagram of the honeycomb imaging panel of matrix spotlight source device described in the present embodiment；
Fig. 3 is the light source collimating packaging structure schematic diagram of light emitting source pixel described in the present embodiment；
Wherein, 1- light source cabinet, 2- matrix spotlight source device, 3- imager, 4- photofabricated product, 5- exposure desk, 6- shading
Device, 7- distribution wire, 8- laser semiconductor light emitting source, 9- concave mirror, 10- convex lens.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe.
Embodiment:
Please refer to Fig. 1, Fig. 2, Fig. 3, a kind of light source direct imaging focused photoetching device that the present embodiment proposes, including light source
Cabinet 1, matrix spotlight source device 2, imager 3, photofabricated product 4 and exposure desk 5.
LED imaging source, light intensity detector and CCD image detector, the light source cabinet are equipped in the light source cabinet 1
For fixing and supporting light source, while the control of the temperature such as heat dissipation is carried, guarantees energy of light source and stability；The light intensity detector
Monitor the energy uniformity of pixel intensity of illumination；The CCD image detector is used for the detection and localization to photofabricated product.
The matrix spotlight source device 2 is equipped with the imaging surface for several light emitting source pixels composition closely arranged in matrix form
Plate, the imaging panel is made as plane or curved surface, and parses and be imaged by Adobe Photoshop image information processing tool
Product original route design drawing and for the light emitting source pixel that is related to out, matches electroluminescence by distribution wire 7 simultaneously, is believed according to image
Breath, which shows and shines, forms point source image, has luminescent properties identity, the practical function of alternative mask.
The imager 3 is by 3 pieces of high-precision optical convex lens groups at 2 kinds of optical paths of design include long-focus and short focus
Away from, the point source image (former route design drawing) that the matrix spotlight source device is presented by object lens is scaled, then by
It is mapped on the photofabricated product, and object lens will also compensate various optical parallaxs.
The photofabricated product 4 is attached on the exposure desk 5, and the photofabricated product is coated with photosensitive material, helps to etch
Route design drawing.
Technical principle: forming image by the former route design drawing image information of analysing integrated circuits at light source, presents
On the imaging panel.Image is incident upon to the lines such as copper-clad plate or the semi-conductor silicon chip for being coated with photosensitive material by imager
Road makes on product, and imaging, which carves, needs route to make route product.
Further embodiment is that 3 lower part of imager is equipped with photochopper 6.
Further embodiment is that the light emitting source pixel selects laser semiconductor light emitting source 8.
Further embodiment is, each light emitting source pixel dot shape is positive hexagon, regular hexagon light emitting source
The matrix spotlight source device of pixel composition is in honeycomb, has the fine and smooth spy soft, color bleeding is round and smooth, clarity is high of imaging
Point, it is possible to reduce black area and smoothness of curve are imaged between pixel.
Further real-time proposals are that the light source bottom of the light emitting source pixel and top cooperation carry out optical concentration standard
Concave mirror 9 is selected in straight encapsulation, bottom, and top uses convex lens 10.
Further embodiment is that optical material can be suitably filled between the light emitting source pixel, reduces imaging
Imaging smoothness of curve is improved in black area.
Further embodiment is that it includes 1:5,1:10,1:50,1:100 and 1 that the object lens, which focus miniature ratio:
1000。
The embodiments of the present invention is explained in detail above in conjunction with attached drawing, but the utility model is not limited to
Above embodiment can also not depart from the utility model within the knowledge of a person skilled in the art
It makes a variety of changes, modify under the premise of objective, replacement and variant, the scope of the utility model is by appended claims and its waits
Jljl limits.
Claims (6)
1. a kind of light source direct imaging focused photoetching device, including light source cabinet, matrix spotlight source device, imager, photoetching production
Product and exposure desk, it is characterised in that:
LED imaging source is equipped in the light-source box body, for fixing and supporting the matrix spotlight source device；
The matrix spotlight source device is equipped with the imaging panel for several light emitting source pixels composition closely arranged in matrix form, institute
State the equal alignment light emitting of light emitting source pixel, the imaging panel is made as plane or curved surface, and by computer image information at
Science and engineering has parsing imaging and produces product original route design drawing and match electroluminescence simultaneously or one by one for the light emitting source pixel being related to,
According to image information display and shine form point source image；
The imager is made of several pieces of eyeglasses, and the point source image that the matrix spotlight source device is presented is pressed by object lens
Scale smaller, then be mapped on the photofabricated product；
The photofabricated product is attached on the exposure desk, and the photofabricated product is coated with photosensitive material.
2. light source direct imaging focused photoetching device according to claim 1, it is characterised in that: the light source cabinet design
There are light intensity detector and CCD image detector, the imager lower part is equipped with photochopper.
3. light source direct imaging focused photoetching device according to claim 1, it is characterised in that: the light emitting source pixel
It can be one of laser semiconductor light emitting source, LED light emitting source, optical fiber luminescent source.
4. light source direct imaging focused photoetching device according to claim 1 or 3, it is characterised in that: each shine source image
Vegetarian refreshments shape can be any shape, and the imaging panel of regular hexagon light emitting source pixel composition is in honeycomb.
5. light source direct imaging focused photoetching device according to claim 1 or 3, it is characterised in that: the luminous source image
The light source bottom of vegetarian refreshments and top cooperation carry out optical concentration collimation encapsulation, and concave mirror is selected in bottom, top using convex lens or
Luxuriant and rich with fragrance Neil lens.
6. light source direct imaging focused photoetching device according to claim 1 or 3, it is characterised in that: the luminous source image
Optical material can be suitably filled between vegetarian refreshments.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820944586.0U CN208521131U (en) | 2018-06-19 | 2018-06-19 | A kind of light source direct imaging focused photoetching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820944586.0U CN208521131U (en) | 2018-06-19 | 2018-06-19 | A kind of light source direct imaging focused photoetching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208521131U true CN208521131U (en) | 2019-02-19 |
Family
ID=65325278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820944586.0U Active CN208521131U (en) | 2018-06-19 | 2018-06-19 | A kind of light source direct imaging focused photoetching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208521131U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646521A (en) * | 2018-06-19 | 2018-10-12 | 上海频微电子科技有限公司 | A kind of light source direct imaging focused photoetching device and photolithography method |
-
2018
- 2018-06-19 CN CN201820944586.0U patent/CN208521131U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646521A (en) * | 2018-06-19 | 2018-10-12 | 上海频微电子科技有限公司 | A kind of light source direct imaging focused photoetching device and photolithography method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI251114B (en) | Exposing mask, production method therefor and exposing method | |
| TWI632435B (en) | Method and apparatus for direct write maskless lithography | |
| US20190033706A1 (en) | Multiple-Mask Multiple-Exposure Lithography and Masks | |
| CN1438546A (en) | Exposing device and method, and making method for device using same | |
| CN106199781B (en) | A kind of flexible method for making curved surface bionic compound eyes structure | |
| TW201535058A (en) | EUV lithography system and method | |
| TW201102770A (en) | Immersion lithography system and method for manufacturing a device in a lithography apparatus | |
| US12044977B2 (en) | Multiple-mask multiple-exposure lithography and masks | |
| TW201729009A (en) | Method and apparatus for direct write maskless lithography | |
| CN108646521A (en) | A kind of light source direct imaging focused photoetching device and photolithography method | |
| CN208521131U (en) | A kind of light source direct imaging focused photoetching device | |
| CN208399889U (en) | Litho machine light supply apparatus | |
| TWI398735B (en) | Light source for exposure | |
| CN103383531B (en) | Mask alignment equipment and use the lithographic equipment of this device | |
| Chopra | Analysis of lithography based approaches in development of semi conductors | |
| JP6494339B2 (en) | Illumination optical system, exposure apparatus, and article manufacturing method | |
| TW556043B (en) | Imaging apparatus, device manufacturing method and device manufactured by said method | |
| CN1858657A (en) | Lithographic apparatus and device manufacturing method | |
| CN202257030U (en) | Large-field direct projection laser photoetching optical system | |
| CN206523740U (en) | A kind of write-through screen printing equipment | |
| Zhong et al. | Maskless lithography based on DMD | |
| CN208752391U (en) | A kind of high-resolution high efficiency projecting etching imaging system | |
| CN103383524B (en) | Defocus measuring method for photoetching equipment | |
| CN113050387A (en) | Optical device, photoetching system comprising same and exposure method thereof | |
| WO2018074820A1 (en) | Curved semiconductor producing device and image sensor employing curved semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |