CN208520962U - A kind of fuse state detection device - Google Patents
A kind of fuse state detection device Download PDFInfo
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- CN208520962U CN208520962U CN201820830463.4U CN201820830463U CN208520962U CN 208520962 U CN208520962 U CN 208520962U CN 201820830463 U CN201820830463 U CN 201820830463U CN 208520962 U CN208520962 U CN 208520962U
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Abstract
This application discloses a kind of fuse state detection devices, comprising: current source, measuring resistance and fuse in parallel；First current mirror is coupled with current source, measuring resistance and fuse, the branch at the respective place of current mirror for providing current source to measuring resistance and fuse；Comparison circuit, including first switching element and second switch element.Fuse state includes blown state or unblown state, and the output level that comparison circuit is under blown state or unblown state in fuse is on the contrary, to judge state that fuse is presently in.By the above-mentioned means, the application can reduce electric current required when reading fuse state.
Description
Technical field
This application involves technical field of semiconductors, more particularly to a kind of fuse state detection device.
Background technique
In technical field of semiconductors in order to adjust chip performance or parameter (for example, adjustment voltage or current a reference source
Deng), adjustment is achieved the purpose that often through the mode for trimming fuse, the type of fuse includes metal, polysilicon etc..
Fuse state includes blown state and unblown state, and tradition judges the circuit of fuse state as shown in Figure 1, the electricity
Road includes fuse 10 and the concatenated NMOS tube of fuse 10 (N-type metal-oxide semiconductor (MOS)) 12, and fuse 10 and NMOS tube 12 couple
Place is defined as node A, and the control terminal 120 of NMOS tube 12, which receives, reads Read signal；When needing to read 10 state of fuse, read
Read signal is high level signal, and NMOS tube 12 is connected；If fuse 10 is in unblown state, the resistance of fuse 10 itself is very
It is small, high level is exported at node A；If fuse 10 is in blown state, the resistance of fuse 10 is very big, and low electricity is exported at node A
It is flat.
Present inventor has found during long-term R & D, due to some fuses 10, such as polysilicon fuse, molten
The distribution of resistance having no progeny is wider, and to guarantee the accurate state for reading fuse 10, the equivalent resistance of NMOS tube 12 cannot mistake in Fig. 1
Greatly；When fuse 10 is in unblown state, NMOS tube 12 is connected at this time, the equivalent resistance of NMOS tube 12 and the electricity of fuse 10
Hinder very little, the branch current where this will lead to fuse 10 and NMOS tube 12 is very big, this to the requirement of source current fan-out capability compared with
It is high.
Utility model content
The application be can reduce and read fuse shape mainly solving the technical problems that provide a kind of fuse state detection device
Required electric current when state.
In order to solve the above technical problems, the technical solution that the application uses is: providing a kind of fuse state detection dress
It sets, comprising: current source, measuring resistance and fuse in parallel, the first of the current source or the measuring resistance or the fuse
End receives the first supply voltage, the current source or the measuring resistance or the second end of the fuse receives second source electricity
Pressure, first supply voltage and the second source voltage are unequal；First current mirror, with the current source, the standard
Resistance and the fuse couple, and the current mirror for providing the current source to the measuring resistance and the fuse are respectively
The branch at place；Comparison circuit, including first switching element and second switch element, wherein the first switching element is located at
The second end of branch road where the measuring resistance, the first path terminal and the measuring resistance couples, alternate path end
Receive the second source voltage；The second switch element is located at the road of the branch where the fuse, the first path terminal with
The second end of the fuse couples, and alternate path end receives the second source voltage, control terminal and the first switch
The control terminal of element couples；Wherein, the fuse state includes blown state or unblown state, the second switch element
The output level that the alternate path end is under blown state or unblown state in the fuse is on the contrary, to judge institute
State the state that fuse is presently in.
The beneficial effect of the application is: being in contrast to the prior art, fuse state provided herein detects dress
Set includes: current source, measuring resistance, fuse, the first current mirror and comparison circuit, wherein current source, measuring resistance and fuse are simultaneously
Connection, the branch where the current mirror that the first current mirror provides current source to measuring resistance and fuse, comparison circuit include the
One switch element and second switch element, first switching element are located at the road of the branch where measuring resistance, the first path terminal with
The second end of measuring resistance couples, and alternate path end receives second source voltage；Second switch element is located at where fuse
The second end of branch road, the first path terminal and fuse couples, and alternate path end receives second source voltage, control terminal with
The control terminal of first switching element couples；Scheme provided herein using measuring resistance compared with the resistance value of fuse, when
When fuse is in unblown state, the resistance value of fuse is less than the resistance value of measuring resistance, and the alternate path end of second switch element is defeated
First level out, when fuse is in blown state, the resistance value of fuse is greater than the resistance value of measuring resistance, and the of second switch element
Two path terminals export second electrical level, and the first level and second electrical level are on the contrary, so as to judge state that fuse is presently in；
The method being compared using measuring resistance with the resistance value of fuse provided herein, current source, can without providing high current
To be set as lesser value, electric current required when fuse state is read so as to reduce.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.Wherein:
Fig. 1 is the circuit diagram of one embodiment of conventional fuse condition checkout gear；
Fig. 2 is the circuit diagram of one embodiment of the application fuse state detection device；
Fig. 3 is the circuit diagram of another embodiment of the application fuse state detection device；
Fig. 4 is the circuit diagram of another embodiment of the application fuse state detection device；
Fig. 5 is the circuit diagram of another embodiment of the application fuse state detection device.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of embodiments of the present application, rather than whole embodiments.Based on this
Embodiment in application, those of ordinary skill in the art are obtained every other under the premise of not making creative labor
Embodiment shall fall in the protection scope of this application.
Referring to Fig. 2, Fig. 2 is the circuit diagram of one embodiment of the application fuse state detection device, the fuse shape
State detection device includes:
Current source 20, for providing electric current, the first end 200 of current source 20 receives the first supply voltage V1, current source 20
Second end 202 receive second source voltage V2, the first supply voltage V1 and second source voltage V2 are unequal.
Fuse 22, in parallel with current source 20, the first end 220 of fuse 22 receives the first supply voltage V1, and the of fuse 22
Two ends 222 receive second source voltage V2；In an application scenarios, the material of fuse 22 can be metal, be also possible to more
Crystal silicon etc., the application is not construed as limiting this.
Measuring resistance 24, in parallel with fuse 22, the first end 240 of measuring resistance 24 receives the first supply voltage V1, standard
The second end 242 of resistance 24 receives second source voltage V2；In an application scenarios, resistance value R1, the fuse of measuring resistance 24
22 resistance value R2, the fuse 22 under unblown state is in the minimum resistance value R3 under blown state, meets following relationship: R2 <
R1≤R3；In general, producer can provide the resistance value after the unblown resistance value R2 of fuse 22 and fusing to fuse 22 when leaving the factory
Range, according to its available minimum resistance value R3 of the Standard resistance range after fusing.State to guarantee the fuse 22 read is correct, R1
Value can as close possible to the value of R3, for example, the value of R1 be equal to R3.
Comparison circuit 26, including first switching element T1 and second switch element T2, wherein first switching element T1 is located at
The second end 242 of branch road where measuring resistance 24, the first path terminal a and measuring resistance 24 couples, alternate path end b
Receive second source voltage V2；Second switch element T2 is located at the branch road where fuse 22, the first path terminal d and fuse 22
Second end 222 couple, alternate path end e receive second source voltage V2, the control of control terminal f and first switching element T1
C coupling in end processed；
First current mirror 28, couples with current source 20, measuring resistance 24 and fuse 22, the electricity for providing current source 20
Branch of the traffic mirroring to measuring resistance 24 and fuse 22 where respective；In an application scenarios, the first current mirror 28 can be incited somebody to action
Electric current copies to the branch of measuring resistance 24 and the respective place of fuse 22, in other application scenarios, the first current mirror 28 with 1:1
Branch where electric current can also being copied to measuring resistance 24 and fuse 22 respectively with other ratios, as long as meeting the first current mirror
28 conditions for keeping measuring resistance 24 equal with the electric current of branch at the respective place of fuse 22.
Wherein, the state of fuse 22 includes blown state and unblown state, the alternate path end e of second switch element T2
The output level that is under blown state or unblown state in fuse 22 is on the contrary, to judge shape that fuse 22 is presently in
State.
Specifically, in one embodiment, the first current mirror 28 includes three switch elements, respectively third is switched
Element T3, the 4th switch element T4, the 5th switch element T5.Wherein, third switch element T3 is located at the branch where current source 20
The second end 202 of road, the first path terminal g and current source 20 couples, and alternate path end h receives second source voltage V2,
Control terminal i and its first path terminal g is coupled；4th switch element T4 is located at the branch where measuring resistance 24, the first access
The alternate path end b of j and first switching element T1 is held to couple, alternate path end k receives second source voltage V2, control terminal
The control terminal i of l and third switch element T3 is coupled；5th switch element T5 is located at the branch where fuse 22, the first access
The alternate path end e of m and second switch element T2 is held to couple, alternate path end n receives second source voltage V2, control terminal
The control terminal i of o and third switch element T3 is coupled；The the first path terminal m's and second switch element T2 of 5th switch element T5
The junction of alternate path end e is defined as first node B, and fuse 22 is in first node when under blown state or unblown state
The output level of B is opposite.
In an application scenarios, as shown in Fig. 2, first switching element T1, second switch element T2 are PMOS tube, third
Switch element T3, the 4th switch element T4, the 5th switch element T5 are NMOS tube, and the first supply voltage V1 is greater than second source electricity
V2 is pressed, in the present embodiment, the first supply voltage V1 is power supply positive voltage Vdd, and second source voltage is power supply negative voltage Vss.
First switching element T1 is connect with the drain electrode b of control terminal c, f of second switch element T2 and first switching element T1, first switch
Element T1 and second switch element T2 conducting；Third switch element T3, the 4th switch element T4, the 5th switch element T5 work are simultaneously
Branch where the current mirror that current source 20 is provided to measuring resistance 24 and fuse 22, and 22 institute of measuring resistance 24 and fuse
Branch current it is equal.
(a) when fuse 22 is in unblown state, the resistance of fuse 22 is less than the resistance of measuring resistance 24, on fuse 22
The voltage drop of generation is less than the voltage drop generated in measuring resistance 24, at this time the electricity of the first path terminal a of first switching element T1
The voltage of the first path terminal d of pressure ratio second switch element T2 is low, in this case results in the control terminal c of first switching element T1
The voltage difference of control terminal f and the first path terminal d with the voltage absolute value of the difference of the first path terminal a less than second switch element T2
Absolute value, due to second switch element T2 be PMOS tube, this can be understood as the voltage of the control terminal f of second switch element T2
It is equivalent to and is pulled low, the alternate path end e of second switch element T2 exports high level, i.e. first node B exports high level；
(b) when fuse 22 is in blown state, the resistance of fuse 22 is greater than the resistance of measuring resistance 24, generates on fuse 22
Voltage drop be greater than the voltage drop that generates in measuring resistance 24, the voltage ratio of the first path terminal a of first switching element T1 at this time
The voltage of the first path terminal d of second switch element T2 is high, in this case results in the control terminal c and the of first switching element T1
The voltage absolute value of the difference of one path terminal a is exhausted greater than control terminal f and the voltage difference of the first path terminal d of second switch element T2
To value, since second switch element T2 is PMOS tube, the voltage that this can be understood as the control terminal f of second switch element T2 is suitable
In being raised, the alternate path end e of second switch element T2 exports low level, i.e. first node B exports low level.
In another application scenarios, referring to Fig. 3, Fig. 3 is the electricity of another embodiment of the application fuse detector
Road schematic diagram.First switching element T1 ', second switch element T2 ' are NMOS tube, third switch element T3 ', the 4th switch element
T4 ', the 5th switch element T5 ' they are PMOS tube, and the first supply voltage V1 ' is less than second source voltage V2 ', in the present embodiment,
First supply voltage V1 ' is power supply negative voltage Vss, and second source voltage V2 ' is power supply positive voltage Vdd.First switching element T1 '
With the drain electrode b ' connection of control terminal c ', the f ' of second switch element T2 ' and first switching element T1 ', first switching element T1 ' and
Second switch element T2 ' conducting；Third switch element T3 ', the 4th switch element T4 ', the 5th switch element T5 ' work and will be electric
Branch where the current mirror that stream source 20 provides to measuring resistance 24 and fuse 22, and 22 place of measuring resistance 24 and fuse
Branch current is equal.
(a) when fuse 22 is in unblown state, the resistance of fuse 22 is less than the resistance of measuring resistance 24, on fuse 22
The voltage drop of generation is less than the voltage drop that generates in measuring resistance 24, at this time the first path terminal a ' of first switching element T1 '
Voltage is higher than the voltage of the first path terminal d ' of second switch element T2 ', in this case results in the control of first switching element T1 '
The voltage of control terminal f ' and first path terminal d ' of the voltage difference of end c ' processed and the first path terminal a ' less than second switch element T2 '
Difference, since second switch element T2 ' is NMOS tube, this can be understood as the voltage phase of the control terminal f ' of second switch element T2 '
When in being raised, the alternate path end e ' output low level of second switch element T2 ', i.e. first node B exports low level；
(b) when fuse 22 is in blown state, the resistance of fuse 22 is greater than the resistance of measuring resistance 24, generates on fuse 22
Voltage drop be greater than the voltage drop that generates in measuring resistance 24, the voltage of the first path terminal a ' of first switching element T1 ' at this time
Voltage than the first path terminal d ' of second switch element T2 ' is low, in this case results in the control terminal of first switching element T1 '
The voltage difference of control terminal f ' and first path terminal d ' of the voltage difference of c ' and the first path terminal a ' greater than second switch element T2 ',
Since second switch element T2 ' is NMOS tube, this voltage that can be understood as the control terminal f ' of second switch element T2 ' is equivalent to
It is pulled low, the alternate path end e ' output high level of second switch element T2 ', i.e. first node B exports high level.
By above embodiment as can be seen that the resistance value provided herein using measuring resistance 24 and fuse 22 into
The method that row compares, current source 20 can be set as lesser value, so that reaching reduction reads fuse 22 without providing high current
The purpose of required electric current when state.
Referring to Fig. 4, Fig. 4 is the circuit diagram of another embodiment of the application fuse state detection device.Fig. 4 be
Protection circuit is introduced on the basis of the fuse state detection device that Fig. 2 is provided, so that closing after the completion of fuse state detection
The electric current of branch road where current source 20, measuring resistance 24, fuse 22.Protecting circuit includes: the 6th switch element T6, is located at
The second end 202 of branch where current source 20, the first path terminal p and current source 20 couples, and alternate path end q receives the
Two supply voltage V2, control terminal r, which are received, reads Read signal；7th switch element T7, the branch where measuring resistance 24
The second end 242 of road, the first path terminal s and measuring resistance 24 couples, and alternate path end t receives second source voltage V2,
Its control terminal u, which is received, reads Read signal；8th switch element T8, the first path terminal v receive the first supply voltage V1, the
The control terminal c of two path terminal w and first switching element T1 is coupled, and control terminal x, which is received, reads Read signal.In the present embodiment
In, above-mentioned 6th switch element T6, the 7th switch element T7 are NMOS tube, and the 8th switch element T8 is PMOS tube.
Please continue to refer to Fig. 4, to allow users to determine the state that fuse 22 is current, fuse shape provided by the present embodiment
State detection device further includes status latch 42, and status latch 42 can cache the digital logic level of first node B output,
So that user determines the state of fuse 22 according to the data logic level.In the present embodiment, status latch 42 includes first
Input terminal 420, the second input terminal 422 and output end 424；Wherein, first input end 420 receives the output level of first node B；
Second input terminal 422, which receives, reads Read signal；It reads Read signal and be in pulse period, output end 424 exports at this time first
The level of node B output；It reads Read signal and is in the non-pulse period, output end 424 exports a pulse period reading
The level that first node B is exported when Read signal is in pulse period.
It is in the non-pulse period when reading Read signal, i.e., the fuse state detection device is in without detecting fuse 22
Stage, first node B may input the voltage of a floating to the first input end 420 of status latch 42, this may result in
Quiescent current is generated inside status latch 42.It is provided herein please continue to refer to Fig. 4 to avoid the occurrence of this
Fuse state detection device further includes the 9th switch element T9, and the first path terminal y receives the first supply voltage V1, and second is logical
The second end 202 of terminal z and current source 20 couples, control terminalIt receives and reads Read signal.In the present embodiment, it the 9th opens
Pass element T9 is PMOS tube.When reading Read signal is in the non-pulse period, the first input end 420 of status latch 42 is connect
The level constant of receipts, to avoid generating quiescent current inside status latch 42.
Please continue to refer to Fig. 4, the workflow of fuse state detection device provided by Fig. 4 is described in detail below.
In Fig. 4, first switching element T1, second switch element T2, the 8th switch element T8, the 9th switch element T9 are
PMOS tube, third switch element T3, the 4th switch element T4, the 5th switch element T5, the 6th switch element T6, the 7th switch member
Part T7 is NMOS tube, and the first supply voltage V1 is greater than second source voltage V2, for example, the first supply voltage V1 is power supply positive voltage
Vdd, second source voltage V2 are power supply negative voltage Vss.The pulse signal that Read signal is high level and low level forms is read,
It reads high level in Read signal and corresponds to its pulse.It reads Read signal to be in pulse period (i.e. high level), device is in molten
Filamentous state detection-phase；It reads Read signal to be in non-pulse period (i.e. low level), device is in fuse state detection and completes
Stage.
Specifically, when reading Read signal high level signal, device is in fuse state detection-phase, the 6th switch member
Part T6, the 7th switch element T7 conducting, the 8th switch element T8, the 9th switch element T9 cut-off, third switch element T3, the 4th
Branch where the current mirror that switch element T4, the 5th switch element T5 provide current source 20 to measuring resistance 24 and fuse 22
Road, and measuring resistance 24 is equal with the electric current of branch road where fuse 22；Fuse 22 is in unblown state, the electricity of fuse 22
Resistance is less than the resistance of measuring resistance 24, and (concrete analysis process is shown in top embodiment to first node B output high level, herein no longer
It repeats)；Fuse 22 is in blown state, and the resistance of fuse 22 is greater than the resistance of measuring resistance 24, and first node B exports low level
(concrete analysis process is shown in top embodiment, and details are not described herein)；
It is low level signal when reading Read signal, device is in fuse state detection completion stage, the 6th switch element
T6, the 7th switch element T7 truncation, so that the branch current where current source 20 and measuring resistance 24 is zero；8th switch member
Part T8 conducting and the control terminal f and first switch member that the first supply voltage V1 (that is, Vdd) is transmitted to second switch element T2
The control terminal c of part T1, since first switching element T1, second switch element T2 are PMOS tube, so that first switching element
T1, second switch element T2 are disconnected, and the electric current of the branch where fuse 22 is zero；9th switch element T9 conducting, and by first
Supply voltage V1 is (i.e..Vdd the control terminal o of the 5th switch element T5, the voltage of the control terminal o of the 5th switch element T5) are transmitted to
Constant is the first supply voltage V1 (that is, Vdd), and the first path terminal m (i.e. first node B) output one of the 5th switch element T5 is permanent
For fixed low level to status latch 42,42 internal stationary electric current of status latch is zero.
Referring to Fig. 5, Fig. 5 is the circuit diagram of another embodiment of the application fuse state detection device.Fig. 5 be
Protection circuit (the 6th switch element T6 ', the 7th switch element are introduced on the basis of the fuse state detection device that Fig. 3 is provided
T7 ', the 8th switch element T8 '), status latch 52, the 9th switch element T9 '.
In Fig. 5, first switching element T1 ', second switch element T2 ', the 8th switch element T8 ', the 9th switch element
T9 ' be NMOS tube, third switch element T3 ', the 4th switch element T4 ', the 5th switch element T5 ', the 6th switch element T6 ',
7th switch element T7 ' is PMOS tube, and the first supply voltage V1 is less than second source voltage V2, for example, the first supply voltage V1
It is power supply positive voltage Vdd for power supply negative voltage Vss, second source voltage V2.Reading Read signal is high level and low level group
At pulse signal, Read signal is in pulse period (i.e. low level), and device is in fuse state detection-phase；Read Read
Signal is in non-pulse period (i.e. high level), and device is in the fuse state detection completion stage.
Specifically, being low level signal when reading Read signal, device is in fuse state detection-phase, the 8th switch
Element T8 ', the 9th switch element T9 ' cut-off, the 6th switch element T6 ', the 7th switch element T7 ' conducting, third switch element
The current mirror that T3 ', the 4th switch element T4 ', the 5th switch element T5 ' provide current source 20 is to measuring resistance 24 and fuse
Branch where 22, and measuring resistance 24 is equal with the branch current where fuse 22；Fuse 22 is in unblown state, fuse
22 resistance be less than measuring resistance 24 resistance, first node B ' output low level (concrete analysis process see top embodiment,
This is repeated no more)；Fuse 22 is in blown state, and the resistance of fuse 22 is greater than the resistance of measuring resistance 24, and first node B ' is defeated
High level out (concrete analysis process is shown in top embodiment, and details are not described herein)；
It is high level signal when reading Read signal, device is in fuse state detection completion stage, the 6th switch element
T6 ', the 7th switch element T7 ' truncation, so that the branch current where current source 20 and measuring resistance 24 is zero；8th switch
Element T8 ' conducting and the control terminal f ' that the first supply voltage V1 (i.e. Vss) is transmitted to second switch element T2 ', due to first
Switch element T2 ', second switch element T2 ' are NMOS tube, so that first switching element T1 ', second switch element T2 ' are disconnected
It opens, the electric current of the branch where fuse 22 is zero；9th switch element T9 ' conducting, and by the first supply voltage V1 (that is, Vss)
It is transmitted to the control terminal o ' of the 5th switch element T5 ', the constant voltage of the control terminal o ' of the 5th switch element T5 ' is the first power supply
The first path terminal m ' (i.e. first node B ') of voltage V1 (that is, Vss), the 5th switch element T5 ' export a constant high level
To status latch 52,52 internal stationary electric current of status latch is zero.
To sum up, the method provided herein being compared using measuring resistance with the resistance value of fuse, current source
Without providing high current, lesser value can be set as, to achieve the purpose that reduce electric current required when reading fuse state.
In addition, fuse state detection device provided herein further includes protection circuit, which makes when molten without reading
When Filamentous state, make the branch current zero where current source, measuring resistance and fuse, i.e., upon completion of the assays, shutdown detection dress
Set internal quiescent current.
The above is only presently filed embodiments, are not intended to limit the scope of the patents of the application, all to utilize the application
Equivalent structure or equivalent flow shift made by specification and accompanying drawing content is applied directly or indirectly in other relevant technologies
Field similarly includes in the scope of patent protection of the application.
Claims (10)
1. a kind of fuse state detection device characterized by comprising
First termination of current source, measuring resistance and fuse in parallel, the current source or the measuring resistance or the fuse
It receives the first supply voltage, the current source or the measuring resistance or the second end of the fuse receives second source voltage, institute
It states the first supply voltage and the second source voltage is unequal；
First current mirror is coupled with the current source, the measuring resistance and the fuse, for provide the current source
Current mirror to the measuring resistance and the fuse respectively where branch；
Comparison circuit, including first switching element and second switch element, wherein the first switching element is located at the standard
The second end of branch road where resistance, the first path terminal and the measuring resistance couples, described in the reception of alternate path end
Second source voltage；The second switch element is located at the branch road where the fuse, the first path terminal and the fuse
Second end coupling, alternate path end receives the second source voltage, the control of control terminal and the first switching element
End coupling processed；
Wherein, the fuse state includes blown state or unblown state, the alternate path of the second switch element
The output level be under blown state or unblown state in the fuse is held on the contrary, to judge the current institute of the fuse
The state at place.
2. the apparatus according to claim 1, which is characterized in that first current mirror includes:
Third switch element, the branch where the current source, the second end coupling of the first path terminal and the current source
It connects, alternate path end receives the second source voltage, and control terminal and its first path terminal couple；
4th switch element, the branch where the measuring resistance, the first path terminal and the first switching element
The coupling of alternate path end, alternate path end receive second source voltage, the control of control terminal and the third switch element
End coupling；
The second of 5th switch element, the branch where the fuse, the first path terminal and the second switch element
Path terminal coupling, alternate path end receive the second source voltage, the control of control terminal and the third switch element
End coupling；
Wherein, when detecting the fuse state, first current mirror makes the branch where the measuring resistance and the fuse
The electric current that road is flowed through is equal, the first path terminal of the 5th switch element and the alternate path end of the second switch element
Junction be defined as first node, the output of fuse first node when being under blown state or unblown state
Level is opposite.
3. the apparatus of claim 2, which is characterized in that described device further includes protection circuit, the protection circuit
For the branch road where closing the current source, the measuring resistance, the fuse after the completion of fuse state detection
Electric current；The protection circuit includes:
6th switch element, the branch where the current source, the second end coupling of the first path terminal and the current source
It connects, alternate path end receives second source voltage, and control terminal, which receives, reads signal；
The second of 7th switch element, the branch where the measuring resistance, the first path terminal and the measuring resistance
End coupling, alternate path end receive second source voltage, and control terminal receives the reading signal；
8th switch element, the first path terminal receive the first supply voltage, alternate path end and the first switching element
Control terminal coupling, control terminal receives the reading signal.
4. device according to claim 3, which is characterized in that described device further include:
Status latch, including first input end, the second input terminal and output end；Wherein, described in the first input end receives
The output level of first node；Second input terminal receives the reading signal；The reading signal is in pulse period, institute
State the level of the output end output first node output at this time；The reading signal is in non-pulse period, the output end
Export the level that reading signal described in a pulse period is in first node output when pulse period.
5. device according to claim 4, which is characterized in that described device further include:
9th switch element, the first path terminal receive the first supply voltage, and alternate path end is described with the current source
Second end coupling, control terminal receive the reading signal, so that when the reading signal is in the non-pulse period, the shape
The received level constant of the first input end of state latch.
6. device according to claim 5, which is characterized in that described first, second, the eight, the 9th switch elements be
PMOS tube, the third, the four, the five, the six, the 7th switch elements are NMOS tube, and first supply voltage is greater than described
Second source voltage, high level corresponds to its pulse in the reading signal.
7. device according to claim 6, which is characterized in that
The reading signal high level signal, described device are in the fuse state detection-phase, the six, the 7th switch
Element conductive, the eight, the 9th switch elements cut-off, the electricity that the third, the four, the 5th elements provide the current source
Road is mirrored to the branch where the measuring resistance and the fuse；The fuse is in unblown state, the electricity of the fuse
Resistance is less than the resistance of the measuring resistance, and the alternate path end of the second switch element exports high level；The fuse is in
Blown state, the resistance of the fuse are greater than the resistance of the measuring resistance, and the alternate path end of the second switch element is defeated
Low level out；
The reading signal is low level signal, and described device be in the fuse state and detects the completion stage, the described 6th, the
Seven switch elements truncation, so that the branch current where the current source and the measuring resistance is zero；8th switch
Element conductive and the control terminal that first supply voltage is transmitted to the second switch element, so that the second switch
Element disconnects, and the electric current of the branch where the fuse is zero；9th switching elements conductive is simultaneously electric by first power supply
Pressure is transmitted to the control terminal of the 5th switch element, so that the first node exports a constant voltage value.
8. device according to claim 5, which is characterized in that described first, second, the eight, the 9th switch elements be
NMOS tube, the third, the four, the five, the six, the 7th switch elements are PMOS tube, and first supply voltage is less than described
Second source voltage, low level corresponds to its pulse in the reading signal.
9. device according to claim 8, which is characterized in that
The reading signal is low level signal, and described device is in the fuse state detection-phase, and described eight, the 9th open
Element cut-off is closed, the six, the 7th switching elements conductive, the third, the four, the 5th switch elements mention the current source
Branch where the current mirror of confession to the measuring resistance and the fuse；The fuse is in unblown state, described molten
The resistance of silk is less than the resistance of the measuring resistance, and the alternate path end of the second switch element exports low level；It is described molten
Silk is in blown state, and the resistance of the fuse is greater than the resistance of the measuring resistance, and the second of the second switch element is logical
Terminal exports high level；
The reading signal is high level signal, and described device be in the fuse state and detects the completion stage, the described 6th, the
Seven switch elements truncation, so that the branch current where the current source and the measuring resistance is zero；8th switch
Element conductive and the control terminal that first supply voltage is transmitted to the second switch element, so that the second switch
Element disconnects, and the electric current of the branch where the fuse is zero；9th switching elements conductive is simultaneously electric by first power supply
Pressure is transmitted to the control terminal of the 5th switch element, so that the first node exports a constant voltage value.
10. the apparatus according to claim 1, which is characterized in that
Resistance value R1, the fuse of the measuring resistance are in resistance value R2 under unblown state, the fuse is in fusing shape
Minimum resistance value R3 under state meets following relationship: R2 < R1≤R3.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820830463.4U CN208520962U (en) | 2018-05-30 | 2018-05-30 | A kind of fuse state detection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820830463.4U CN208520962U (en) | 2018-05-30 | 2018-05-30 | A kind of fuse state detection device |
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| CN208520962U true CN208520962U (en) | 2019-02-19 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108572315A (en) * | 2018-05-30 | 2018-09-25 | 东莞赛微微电子有限公司 | A kind of fuse state detection device |
| CN114489211A (en) * | 2022-01-20 | 2022-05-13 | 深圳市单源半导体有限公司 | Fuse fusing method and circuit of multiplexing switch |
| CN115273951A (en) * | 2022-09-26 | 2022-11-01 | 南京浣轩半导体有限公司 | Fuse trimming device and method |
| CN115373462A (en) * | 2022-10-25 | 2022-11-22 | 深圳利普芯微电子有限公司 | Chip trimming detection circuit, chip and electronic equipment |
| CN116365079A (en) * | 2023-05-23 | 2023-06-30 | 荣耀终端有限公司 | Electronic device, method for determining whether battery is old or new, and computer-readable storage medium |
-
2018
- 2018-05-30 CN CN201820830463.4U patent/CN208520962U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108572315A (en) * | 2018-05-30 | 2018-09-25 | 东莞赛微微电子有限公司 | A kind of fuse state detection device |
| CN114489211A (en) * | 2022-01-20 | 2022-05-13 | 深圳市单源半导体有限公司 | Fuse fusing method and circuit of multiplexing switch |
| CN115273951A (en) * | 2022-09-26 | 2022-11-01 | 南京浣轩半导体有限公司 | Fuse trimming device and method |
| CN115373462A (en) * | 2022-10-25 | 2022-11-22 | 深圳利普芯微电子有限公司 | Chip trimming detection circuit, chip and electronic equipment |
| CN116365079A (en) * | 2023-05-23 | 2023-06-30 | 荣耀终端有限公司 | Electronic device, method for determining whether battery is old or new, and computer-readable storage medium |
| CN116365079B (en) * | 2023-05-23 | 2023-10-20 | 荣耀终端有限公司 | Electronic device, method for determining whether battery is old or new, and computer-readable storage medium |
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Address after: 523808 room 402, 404, 408, building 1, no.6, South Industrial Road, Songshanhu Park, Dongguan City, Guangdong Province Patentee after: Guangdong Saiwei Electronics Co.,Ltd. Address before: Room 410, 411 and 412, building 3, no.6, Gongye South Road, Songshanhu high tech Industrial Development Zone, Dongguan City, Guangdong Province 523808 Patentee before: DONGGUAN CELLWISE MICROELECTRONICS Co.,Ltd. |
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