CN208507901U - Asymmetric port SIW filter - Google Patents
Asymmetric port SIW filter Download PDFInfo
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- CN208507901U CN208507901U CN201820357679.3U CN201820357679U CN208507901U CN 208507901 U CN208507901 U CN 208507901U CN 201820357679 U CN201820357679 U CN 201820357679U CN 208507901 U CN208507901 U CN 208507901U
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- port
- microstrip line
- out wire
- layer
- lead
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Abstract
The utility model provides a kind of asymmetric port SIW filter, the filter includes the second metal printing brush layer positioned at the first metal printing brush layer of medium substrate layer upper surface and positioned at medium substrate layer lower surface, the upper surface of medium substrate layer is equipped with the first port lead-out wire and second port lead-out wire connecting with the first metal printing brush layer, the metallization VIA for being connected to the first metal printing brush layer and the second metal printing brush layer is laid on medium substrate layer, the microstrip line of first port lead-out wire and second port lead-out wire is the assembly of isosceles trapezoid microstrip line and rectangular microstrip line, first port lead-out wire and second port lead-out wire are located at different axis directions between each other.The utility model can be convenient in the case where not needing additionally to increase SIW substrate width or increasing other microwave converting transmission lines, directly by changing the setting to SIW port of wave filter direction on original substrate, it can flexibly realize signal in the transmission of non-flat line direction.
Description
Technical field
The utility model relates to filter fields, more particularly, to a kind of asymmetric port SIW filter.
Background technique
With the fast development of field of microwave communication, the power consumption, volume, integrated level etc. of all kinds of devices are proposed higher
Requirement.For SIW as a kind of novel waveguide structure, it can realize the transmission spy similar to metal rectangular waveguide on dielectric substrate
Property, combines the miniaturization of micro-strip device, is easily integrated the powerful advantage with waveguide device, be widely used in microwave,
In millimeter-wave communication system.
The prior art specifically includes that
Traditional SIW filter is mostly single layer structure, and input/output port is all set in approximately the same plane, two ends
Mouth is on same straight line or is parallel to each other, so that signal can only be transmitted in rectilinear direction；Or final stage resonant cavity it
As output port in the form of one section of microstrip line is arranged to increase substrate width outside so that between input and output port at
90 ° of angles.With the requirement that all kinds of microwaves, millimetre-wave radar, communication system minimize, sorts of systems is from traditional two dimension
Planar integration develops to three-dimensionally integrated direction.In three-dimensionally integrated encapsulation, an important problem is exactly to need system and device
Miniaturization, and signal is enable flexibly to be transmitted in different directions, this makes the SIW filter of above-mentioned port setting form
Nonlinear type plane figure or it is three-dimensionally integrated in use be extremely limited.
Utility model content
The purpose of this utility model: the utility model is directed in background technique to be existed in existing SIW filter construction form
Deficiency, propose that a kind of structure is simple, SIW filtering small in size, the coplanar non-parallel input/output port that is easily integrated
Device.
The purpose of this utility model is achieved through the following technical solutions:
A kind of asymmetric port SIW filter, the filter include the first metal printing positioned at medium substrate layer upper surface
The upper surface of brush layer and the second metal printing brush layer positioned at medium substrate layer lower surface, the medium substrate layer is equipped with and the first gold medal
The first port lead-out wire and second port lead-out wire for belonging to printing layer connection are laid on the medium substrate layer for being connected to the
The metallization VIA of one metal printing brush layer and the second metal printing brush layer, the first port lead-out wire and second port lead-out wire
Microstrip line is the assembly of isosceles trapezoid microstrip line and rectangular microstrip line, and the first port lead-out wire and second port are drawn
Line is located at different axis directions between each other, is in non-parallel relation.
Further, the first metal printing brush layer and the second metal printing brush layer are rectangle.
Further, the angle between the first port lead-out wire and second port lead-out wire is 90 ° or is greater than 0 ° small
Any angle between 90 °.
Further, the metallization VIA is round, rectangular or polygon.
Further, the first port lead-out wire and second port lead-out wire are 50 ohm of microstrip line.
Further, 90 ° of turnings are provided on the second port lead-out wire.
Further, the first port lead-out wire includes an isosceles trapezoid microstrip line and a rectangular microstrip line, etc.
The bottom of the trapezoidal microstrip line of waist connects the first metal printing brush layer, upper bottom connection side shaped microstrip line；The second port lead-out wire packet
Include an isosceles trapezoid microstrip line and a rectangular microstrip line, the bottom of isosceles trapezoid microstrip line connect the first metal printing brush layer,
Upper bottom connection side shaped microstrip line, rectangular microstrip line middle part 90-degree bent.
Further, the model Ferro A6M of the medium substrate layer, the relative dielectric constant of medium substrate are 5.9,
Loss tangent is 0.002, dielectric substrate thickness 0.254mm；The upper and lower surfaces of medium substrate cover metal copper layer, cover gold
Belong to layers of copper with a thickness of 0.003mm.
Further, the total length of entire filter is 24.5mm, width 3.26mm；First port lead-out wire it is rectangular
The width t=0.37mm of microstrip line, the long w0=0.95mm in bottom of isosceles trapezoid microstrip line, the upper bottom of isosceles trapezoid microstrip line are long
The high s1=1.40mm of 0.37mm, isosceles trapezoid microstrip line；The width 0.37mm of the rectangular microstrip line of second port lead-out wire, etc.
The height of go to the bottom long 0.95mm, the long 0.37mm in upper bottom of isosceles trapezoid microstrip line, the isosceles trapezoid microstrip line of the trapezoidal microstrip line of waist
1.40mm；After the rectangular microstrip line bending of second port lead-out wire, what is connect with isosceles trapezoid microstrip line is rendered as rectangular portion
The long s2=0.5mm divided.
Further, metallization VIA is circle, center distance s=0.4mm of adjacent metal via hole, metallization VIA
Diameter d=0.2mm.
Compared with prior art, what the utility model can be convenient is not needing additionally to increase SIW substrate width or increase
In the case where other microwave converting transmission lines, directly SIW port of wave filter direction is set by changing on original substrate
It sets, can flexibly realize signal in the transmission of non-flat line direction.
Detailed description of the invention
Fig. 1 is the coplanar non-parallel port SIW filter top view of the utility model；
Fig. 2 is the bottom view of Fig. 1；
Fig. 3 is that the S parameter of the coplanar non-parallel port SIW filter of the utility model emulates schematic diagram.
Description of symbols:
1 be the first metal printing brush layer, 2 be medium substrate layer, 3 be the second metal printing brush layer, 4 be first port lead-out wire, 5
It is plated-through hole for second port lead-out wire, 6.
Specific embodiment
The utility model is described in detail in the following with reference to the drawings and specific embodiments.
Embodiment
The utility model provides a kind of asymmetric port SIW filter, as shown in FIG. 1 to 3: the filter includes being located at
First metal printing brush layer 1 of 2 upper surface of medium substrate layer and the second metal printing brush layer 3 positioned at 2 lower surface of medium substrate layer.It is situated between
The upper surface of matter substrate layer 2 is equipped with the first port lead-out wire 4 and second port lead-out wire 5 connecting with the first metal printing brush layer 1.
The metallization VIA 6 for being connected to the first metal printing brush layer 1 and the second metal printing brush layer 3 is laid on medium substrate layer 2.First
The microstrip line of port lead-out wire 4 and second port lead-out wire 5 is the assembly of isosceles trapezoid microstrip line and rectangular microstrip line.The
Single port lead-out wire 4 and second port lead-out wire 5 are located at different axis directions between each other, are in non-parallel relation.
First metal printing brush layer and the second metal printing brush layer are rectangle.Metallization VIA is round, rectangular or polygon
Shape, and the second metal printing brush layer 3 of the first metal printing brush layer 1 through upper surface, medium substrate layer 2 and lower surface, in hole
It does metalized and is connected with upper surface the first metal printing brush layer 1 and lower surface the second metal printing brush layer 3.First port is drawn
Outlet and second port lead-out wire are 50 ohm of microstrip line.
Angle between first port lead-out wire and second port lead-out wire be 90 ° or greater than 0 ° less than 90 ° between appoint
Meaning angle.The present embodiment is provided with 90 ° of turnings on second port lead-out wire.First port lead-out wire includes an isosceles
The bottom of trapezoidal microstrip line and a rectangular microstrip line, isosceles trapezoid microstrip line connects the first metal printing brush layer, upper bottom connection side
Shaped microstrip line；Second port lead-out wire includes an isosceles trapezoid microstrip line and a rectangular microstrip line, isosceles trapezoid microstrip line
Bottom connect the first metal printing brush layer, upper bottom connection side shaped microstrip line, 90-degree bent in the middle part of rectangular microstrip line.
SIW filter is rectangle, and the dielectric resonant chamber size and shape of filter can be adjusted according to actual needs.
In this implementation, the total length of entire filter is 24.5mm, width 3.26mm；The rectangular microstrip line of first port lead-out wire
Width t=0.37mm, the long w0=0.95mm in bottom of isosceles trapezoid microstrip line, isosceles trapezoid microstrip line the long 0.37mm in upper bottom,
The high s1=1.40mm of isosceles trapezoid microstrip line；The width 0.37mm of the rectangular microstrip line of second port lead-out wire, isosceles trapezoid
The high 1.40mm of go to the bottom long 0.95mm, the long 0.37mm in upper bottom of isosceles trapezoid microstrip line, the isosceles trapezoid microstrip line of microstrip line；The
After the rectangular microstrip line bending of Two-port netwerk lead-out wire, what is connect with isosceles trapezoid microstrip line is rendered as the long s2=of rectangular part
0.5mm。
The relative dielectric constant of the model Ferro A6M of medium substrate layer, medium substrate are 5.9, and loss tangent is
0.002, dielectric substrate thickness 0.254mm；The upper and lower surfaces of medium substrate cover metal copper layer, cover the thickness of metal copper layer
Degree is 0.003mm.
Center distance s=0.4mm of adjacent metal via hole, metallization VIA diameter d=0.2mm.
The other sizes of the front and back structure of filter are as follows: L0=2.73, L1=2.07mm, L2=2.82mm, L3
=2.88mm, w0=0.95mm, w1=1.67mm, w2=1.30mm, w3=1.22mm, w=2.47mm.
From figure 3, it can be seen that the utility model can be good at realizing the signal transmission in non-flat line direction.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, and should refer to
Out, any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention etc. should all include
It is within the protection scope of the utility model.
Claims (10)
1. a kind of asymmetric port SIW filter, which is characterized in that the filter includes positioned at the of medium substrate layer upper surface
One metal printing brush layer and the second metal printing brush layer positioned at medium substrate layer lower surface, the upper surface of the medium substrate layer is equipped with
The first port lead-out wire and second port lead-out wire connecting with the first metal printing brush layer are laid on the medium substrate layer useful
In the metallization VIA of connection the first metal printing brush layer and the second metal printing brush layer, the first port lead-out wire and second port
The microstrip line of lead-out wire is the assembly of isosceles trapezoid microstrip line and rectangular microstrip line, the first port lead-out wire and second
Port lead-out wire is located at different axis directions between each other, is in non-parallel relation.
2. a kind of asymmetric port SIW filter according to claim 1, which is characterized in that first operplate printing
Layer and the second metal printing brush layer are rectangle.
3. a kind of asymmetric port SIW filter according to claim 1, which is characterized in that the first port is drawn
Angle between line and second port lead-out wire is 90 ° or greater than 0 ° less than any angle between 90 °.
4. a kind of asymmetric port SIW filter according to claim 1, which is characterized in that the metallization VIA is
Round, rectangular or polygon.
5. a kind of asymmetric port SIW filter according to claim 1, which is characterized in that the first port is drawn
Line and second port lead-out wire are 50 ohm of microstrip line.
6. a kind of asymmetric port SIW filter according to claim 1, which is characterized in that the second port is drawn
90 ° of turnings are provided on line.
7. a kind of asymmetric port SIW filter according to claim 6, which is characterized in that the first port is drawn
Line includes an isosceles trapezoid microstrip line and a rectangular microstrip line, and the bottom of isosceles trapezoid microstrip line connects the first operplate printing
Layer, upper bottom connection side shaped microstrip line；The second port lead-out wire includes an isosceles trapezoid microstrip line and a rectangular micro-strip
Line, the bottom of isosceles trapezoid microstrip line connect the first metal printing brush layer, upper bottom connection side shaped microstrip line, and rectangular microstrip line middle part is curved
90 ° of folding.
8. a kind of asymmetric port SIW filter according to claim 1, which is characterized in that the medium substrate layer
Model Ferro A6M, the relative dielectric constant of medium substrate are 5.9, loss tangent 0.002, dielectric substrate thickness
0.254mm；The upper and lower surfaces of medium substrate cover metal copper layer, cover metal copper layer with a thickness of 0.003mm.
9. a kind of asymmetric port SIW filter according to claim 7, which is characterized in that the overall length of entire filter
Degree is 24.5mm, width 3.26mm；The width t=0.37mm of the rectangular microstrip line of first port lead-out wire, isosceles trapezoid are micro-
The high s1=of the long w0=0.95mm in bottom, the long 0.37mm in upper bottom of isosceles trapezoid microstrip line, isosceles trapezoid microstrip line with line
1.40mm；The width 0.37mm of the rectangular microstrip line of second port lead-out wire, isosceles trapezoid microstrip line the long 0.95mm in bottom, etc.
The high 1.40mm of the long 0.37mm in upper bottom of the trapezoidal microstrip line of waist, isosceles trapezoid microstrip line；The rectangular micro-strip of second port lead-out wire
After line bending, what is connect with isosceles trapezoid microstrip line is rendered as the long s2=0.5mm of rectangular part.
10. a kind of asymmetric port SIW filter according to claim 4, which is characterized in that metallization VIA is circle
Shape, center distance s=0.4mm of adjacent metal via hole, metallization VIA diameter d=0.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820357679.3U CN208507901U (en) | 2018-03-16 | 2018-03-16 | Asymmetric port SIW filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820357679.3U CN208507901U (en) | 2018-03-16 | 2018-03-16 | Asymmetric port SIW filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208507901U true CN208507901U (en) | 2019-02-15 |
Family
ID=65295177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820357679.3U Expired - Fee Related CN208507901U (en) | 2018-03-16 | 2018-03-16 | Asymmetric port SIW filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208507901U (en) |
-
2018
- 2018-03-16 CN CN201820357679.3U patent/CN208507901U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190215 Termination date: 20200316 |