CN208505950U - Conductive wafer type identification equipment - Google Patents
Conductive wafer type identification equipment Download PDFInfo
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- CN208505950U CN208505950U CN201821029389.2U CN201821029389U CN208505950U CN 208505950 U CN208505950 U CN 208505950U CN 201821029389 U CN201821029389 U CN 201821029389U CN 208505950 U CN208505950 U CN 208505950U
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- silicon wafer
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Abstract
The utility model discloses a kind of conductive wafer type identification equipment, including transmission track, the front end robot arm for silicon wafer to be measured to be placed on the transmission track, the wheel electrode on the transmission track, be connected with the wheel electrode and ohm tester that be used to test the silicon wafer actual resistance and the silicon slice under test sorted into rear robot arm and control system to support container, the record sucking apparatus for drawing the silicon wafer is provided on the front end robot arm and rear robot arm.A kind of conductive wafer type identification equipment of the utility model, can fast resolution go out the conduction type of silicon wafer, as a result accurately.
Description
Technical field
The utility model belongs to silicon wafer manufacturing technology field, and in particular to a kind of conductive wafer type identification equipment.
Background technique
Silicon wafer is a kind of semiconductor device using the sunlight direct generation of electricity, at present using crystal silicon solar batteries as photovoltaic row
Main product in the industry, principle are to work as solar irradiation on semiconductor p-n junctions, new electron-hole pair are generated, in p-n junction
Under the action of built in field, photohole flows to the area p, and light induced electron flows to the area n, and p-n junction both sides is caused to take positive negative electricity respectively
Lotus just generates electric current after connecting circuit.P-n junction is the core cell of silicon wafer, there are two types of generation type is general, in P-type silicon
When diffusion phosphorus or in the while diffused with boron of N-type silicon.Therefore before the process flow of diffusion, confirm the conductive-type of silicon wafer
Type, that is, p-type or N-type, it appears particularly significant.General common two methods determine the conduction type of silicon wafer at present, visual method and cold
Thermoprobe method.
Visual method: identifying mainly in accordance with the subtle color change to silicon chip surface, but due to the approval to color because
People and it is different, there is also difference, inspection is difficult accurately to carry out the surface color that various processes are presented.It visually also can only be to table
Face has the semi-finished product of phosphorosilicate glass to be identified, other stages of product can not implement.
Cold-hot probe method: using the principle of thermoelectric effect, two different probes of temperature are contacted with silicon chip surface, two
External galvanometer (or digital voltmeter) forms a closed circuit between probe, according to there are caused by the temperature difference at two contact points
The direction of thermocurrent (or thermoelectric voltage) can determine conduction type, but this method is directed to thicker PN conduction type
Discernment is stronger, due to being detected in silicon wafer production process mainly for lamina plane or edge thin layer, this method
Recognition accuracy is not high.
Utility model content
In view of this, in order to overcome the drawbacks of the prior art, one of the purpose of this utility model is to provide a kind of silicon wafer and leads
Electric type identification equipment, operation are simple and convenient to operate, and differentiate result rapidly and accurately, and can be directed to lamina plane or silicon wafer
Edge thin layer carry out detection identification.
In order to achieve the above object, the following technical solution is employed for the utility model:
A kind of conductive wafer type identification equipment, including transmission track, for silicon wafer to be measured to be placed in the transmission
Front end robot arm on track, the wheel electrode on the transmission track, be connected with the wheel electrode and use
In ohm tester for testing the silicon wafer actual resistance and according to the test result of ohm tester will it is described to
It surveys silicon wafer and sorts the rear robot arm to support container, be arranged on the front end robot arm and rear robot arm useful
In the record sucking apparatus for drawing the silicon wafer.By the wheel electrode being connect with ohm tester, it can measure and be rolled positioned at electrode in real time
The resistance value of silicon wafer on wheel, control system compare the resistance threshold of the actual resistance of silicon wafer and setting, if the silicon
The actual resistance of piece is less than the resistance threshold of setting, then control system controls rear robot arm and the silicon wafer is put into N-type silicon
Piece supporting region, if the actual resistance of the silicon wafer is greater than the resistance threshold of setting, control system controls rear robot arm will
The silicon wafer is put into P-type wafer supporting region.
Preferably, the described for the silicon wafer to be tightly attached to of blowing out pressurised air is provided with above the wheel electrode
The gas curtain of wheel electrode.
The utility model additionally provides a kind of conductive wafer type tester, including Ohmic resistance table and for contact to
The spring probe for surveying silicon wafer, is electrically connected between the Ohmic resistance table and the spring probe with conducting wire.
Preferably, the spacing between two spring probes is 1cm.
Preferably, the Ohmic resistance table is pointer Ohmic resistance table, the instruction disk of the pointer-type Ohmic resistance table
It is equipped with a marking line, the resistance value of the marking line position is the resistance threshold of setting.By in pointer ohm electricity
Marking line is set in resistance table, so that the resistance value of the silicon wafer measured is compared with the resistance threshold of setting in real time, and is being indicated
N-type silicon chip is marked on the left of line, marks P-type wafer on the right side of marking line, can quickly show that current silicon slice under test is N
Type silicon wafer or P-type wafer.
Compared with prior art, a kind of conductive wafer type for having the beneficial effect that the utility model of the utility model
Discriminating device and conductive wafer type tester, can fast resolution go out the conduction type of silicon wafer, as a result accurately, and can be directed to
The edge thin layer of lamina plane or silicon wafer carries out detection identification.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the utility model
Example is applied, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the schematic diagram of conductive wafer type identification equipment in the preferred embodiment in the utility model one；
Fig. 2 is the schematic diagram of conductive wafer type tester in the preferred embodiment in the utility model two；
In attached drawing: silicon wafer -1, transmission track -2, wheel electrode -3, ohm tester -4, support container -5, gas curtain -6, Europe
Nurse ohmmeter -7, spring probe -8, conducting wire -9, marking line -10, pointer -11.
Specific embodiment
It is practical below in conjunction with this in order to make those skilled in the art more fully understand the technical solution of the utility model
Attached drawing in new embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that institute
The embodiment of description is only the embodiment of the utility model a part, instead of all the embodiments.Based on the utility model
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, all should belong to the range of utility model protection.
One conductive wafer type identification equipment of embodiment
Referring to Fig.1, a kind of conductive wafer type identification equipment of the present embodiment, including transmission track 2, for will be to be measured
Silicon wafer 1 be placed in the front end robot arm on transmission track 2, the wheel electrode 3 on transmission track 2, with 3 phase of wheel electrode
Connection and for 1 actual resistance of test silicon wafer ohm tester 4, will be to be measured according to the test result of ohm tester 4
The sorting of silicon wafer 1 is to the rear robot arm and control system in support container 5, on front end robot arm and rear robot arm
It is provided with the record sucking apparatus for drawing silicon wafer 1, support container 5 includes P-type wafer supporting region and N-type silicon chip supporting region.
Guarantee the accuracy of test result on wheel electrode 3 to enable silicon wafer 1 to be tightly attached to, the present embodiment is in electrode
The top of idler wheel 3 is provided with the gas curtain 6 of blowing out pressurised air.
Conductive wafer type identification equipment in the present embodiment based on method of discrimination, mainly comprise the steps that and 1) set
Determine resistance threshold: since P-type wafer is different with the conductivity principle of N-type silicon chip, the actual resistance of N-type silicon chip is low, N-type silicon chip
Actual resistance does not exceed 200 Ω, and the actual resistance of P-type wafer is high, and the actual resistance of P-type wafer is not less than 5000
Ω, the i.e. maximum magnitude of resistance threshold can be 200-5000 Ω.Resistance threshold is set as 1000 Ω in the present embodiment；2) it chooses
Silicon slice under test: the silicon slice under test that several P/N types mix is chosen；3) it measures actual resistance: measuring the actual resistance of silicon wafer,
Its measured zone is from the region within silicon chip edge 1cm-15cm, and actual resistance is that 5-10 are acquired in measured zone
The average value of the resistance value of different location, so that result is more accurate；4) differentiate the conduction type of silicon wafer: will measure resulting
The actual resistance of silicon wafer and the resistance threshold of setting compare, if actual resistance is greater than the resistance threshold 1000 of setting
Ω, then silicon wafer is P-type wafer.The actual resistance for such as measuring silicon wafer is 5368 Ω, then the conduction type of the silicon wafer is p-type；If
Actual resistance is less than 1000 Ω of resistance threshold, then silicon wafer is N-type silicon chip.The actual resistance for such as measuring silicon wafer is 156 Ω, then
The conduction type of the silicon wafer is N-type.It, can by comparing the size between the actual resistance of silicon wafer and the resistance threshold of setting
As a result rapidly and accurately the conduction type of fast resolution silicon wafer, and can be examined for the edge thin layer of lamina plane or silicon wafer
Survey identification.
By the wheel electrode 3 being connect with ohm tester 4 in the present embodiment, can measure in real time positioned at wheel electrode 4
On silicon wafer 1 resistance value, be provided with identification module in control system, identification module is by the actual resistance and setting of silicon wafer 1
Resistance threshold compare, if the actual resistance of the silicon wafer 1 be less than setting resistance threshold, control system send signal
Give rear robot arm, rear robot arm receives and the silicon wafer 1 is put into N-type silicon chip supporting region after the signal, if the silicon wafer 1
Actual resistance is greater than the resistance threshold of setting, then control system sends a signal to rear robot arm, and rear robot arm connects
It receives and the silicon wafer 1 is put into P-type wafer supporting region after the signal.The resistance threshold set in the present embodiment is 1000 Ω.
The course of work of conductive wafer type identification equipment in the present embodiment described briefly below:
It, is placed on biography using front end robot arm and record sucking apparatus by the silicon wafer 1 that M piece (M >=1) the P/N type of selection mixes piecewise
It send on track 2.Silicon wafer 1 on transmission track 2 when being fed forward by two wheel electrodes connecting with ohm tester 43, silicon
Blown on the upside of piece 1 using the gas curtain 6 of compressed air, guarantee silicon wafer 1 with wheel electrode 3 is good contacts.
Ohm tester 4 is to the 1 real-time detection ohm resistance of silicon wafer moved on wheel electrode 3.It is inside at 1 edge of silicon wafer
The resistance value of 5 positions of interval acquisition terminates, each position in the present embodiment since at 1cm at 13cm between 1cm-15cm
Spacing is 3cm, obtains actual resistance after carrying out mean value calculation to 5 sampled values and is sent to control system, control system
Identification module receive and compare judgement with the resistance threshold of setting after actual resistance, if actual resistance is greater than 1000
The judgement of Ω is P-type wafer 1, and control system sends a signal to rear robot arm, and rear robot arm will after receiving the signal
The silicon wafer 1 is put into P-type wafer supporting region；If actual resistance is determined as that N-type silicon chip 1, control system send letter less than 1000 Ω
Number rear robot arm is given, rear robot arm receives and the silicon wafer 1 is put into N-type silicon chip supporting region after the signal.
Conductive wafer type identification equipment in the present embodiment passes through the actual resistance of measurement silicon wafer and the electricity with setting
Resistance threshold value compares the conduction type for judging silicon wafer, and operation is simple and convenient to operate, and differentiates result rapidly and accurately, and being capable of needle
Detection identification is carried out to the edge thin layer of lamina plane or silicon wafer.
Two conductive wafer type detection instrument of embodiment
Referring to Fig. 2, the present embodiment additionally provides a kind of conductive wafer type tester, including Ohmic resistance table 7 and use
Spacing between the spring probe 8 of contact measured silicon wafer 1, two spring probes 8 is 1cm, Ohmic resistance table 7 and spring probe
It is electrically connected between 8 with conducting wire 9.
Ohmic resistance table 7 in the present embodiment is pointer Ohmic resistance table, the instruction disk of the pointer-type Ohmic resistance table
It is equipped with a marking line 10, the resistance value of 10 position of marking line is the resistance threshold of setting, the electricity set in the present embodiment
Resistance threshold value is 1000 Ω.Indicate in the left side of marking line 10 with " N " in the present embodiment, the right side of marking line 10 is marked with " P "
Will, so that the result of test is more concise.
By the way that marking line is arranged in pointer Ohmic resistance table so that the resistance value of the silicon wafer 1 measured in real time with setting
Resistance threshold compare, and the left side of marking line 10 marks N-type silicon chip, the right side of marking line 10 marks P-type silicon
Piece can quickly show that current silicon slice under test is N-type silicon chip or P-type wafer.Conductive wafer type in the present embodiment is surveyed
Try instrument based on method of discrimination and the discriminating device of embodiment one kind it is substantially similar, no longer Ao Shu herein.
The course of work of conductive wafer type detection instrument in the present embodiment described briefly below:
Pointer Ohmic resistance table 7 exports two conducting wires 9, and two conducting wires 9 are connected to two spring probes that spacing is 1cm
On 8.7 output valve of Ohmic resistance table is adjusted to " 10 Ω " shelves, marking line is set in 1000 positions Ω of pointer display area, it is fixed
Adopted 10 to 0 Ω value region of marking line is N-type region, and the definition 10 to+∞ region Ω of marking line is p type island region.Two spring probes 8 are pressed
On the surface of silicon wafer 1, identify that current silicon wafer 1 is P-type wafer or N-type silicon according to the band of position of the pointer 11 where final
Piece.
The easy conductive wafer type detection instrument of the present embodiment, by measure silicon wafer actual resistance and with setting
Resistance threshold compares the conduction type for judging silicon wafer, easy to operate, differentiates result rapidly and accurately, and can be directed to lamina plane
Or the edge thin layer of silicon wafer carries out detection identification.
The above embodiments are only for explaining the technical ideas and features of the present invention, and its object is to allow be familiar with technique
Personage can understand the content of the utility model and implement accordingly, do not limit the protection scope of the present invention,
All equivalent change or modifications according to made by the spirit of the present invention essence, should all cover the protection scope of the utility model it
It is interior.
Claims (2)
1. a kind of conductive wafer type identification equipment, it is characterised in that: including transmission track, for silicon wafer to be measured to be placed in
Front end robot arm on the transmission track, the wheel electrode on the transmission track are connected with the wheel electrode
After connecing and be used to test ohm tester of the silicon wafer actual resistance, sorting the silicon slice under test to support container
Hold mechanical arm and control system.
2. a kind of conductive wafer type identification equipment according to claim 1, it is characterised in that: the wheel electrode it is upper
Side is provided with the gas curtain for being used to for the silicon wafer being tightly attached to the wheel electrode of blowing out pressurised air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821029389.2U CN208505950U (en) | 2018-06-29 | 2018-06-29 | Conductive wafer type identification equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821029389.2U CN208505950U (en) | 2018-06-29 | 2018-06-29 | Conductive wafer type identification equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208505950U true CN208505950U (en) | 2019-02-15 |
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ID=65281984
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| Application Number | Title | Priority Date | Filing Date |
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| CN201821029389.2U Active CN208505950U (en) | 2018-06-29 | 2018-06-29 | Conductive wafer type identification equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108957275A (en) * | 2018-06-29 | 2018-12-07 | 韩华新能源（启东）有限公司 | Conductive wafer type identification method and discriminating device and tester based on the method for discrimination |
| CN113125854A (en) * | 2021-04-07 | 2021-07-16 | 上海新昇半导体科技有限公司 | Method for judging conductive type of silicon wafer |
-
2018
- 2018-06-29 CN CN201821029389.2U patent/CN208505950U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108957275A (en) * | 2018-06-29 | 2018-12-07 | 韩华新能源（启东）有限公司 | Conductive wafer type identification method and discriminating device and tester based on the method for discrimination |
| CN113125854A (en) * | 2021-04-07 | 2021-07-16 | 上海新昇半导体科技有限公司 | Method for judging conductive type of silicon wafer |
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