CN208395314U - A kind of full nitrogen silicon single crystal crystal pulling device - Google Patents
A kind of full nitrogen silicon single crystal crystal pulling device Download PDFInfo
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- CN208395314U CN208395314U CN201820526612.8U CN201820526612U CN208395314U CN 208395314 U CN208395314 U CN 208395314U CN 201820526612 U CN201820526612 U CN 201820526612U CN 208395314 U CN208395314 U CN 208395314U
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- furnace body
- cantilever
- crucible
- nitrogen
- air inlet
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Abstract
The utility model provides a kind of full nitrogen silicon single crystal crystal pulling device, including furnace body, crucible is set in furnace body, guide shell and suspension arrangement for hanging guide shell, guide shell is located at the top of crucible, nitrogen inlet is offered at the top of furnace body, suspension arrangement includes hollow cantilever and air inlet disk, air inlet disk is fixedly connected on the bottom of cantilever, furnace body is stretched out in one end of cantilever, the other end of cantilever is protruded under the bell of furnace body and is connected to air inlet disk, the top of cantilever connects argon inlet pipeline, the utility model has the beneficial effects that using argon gas as localised protection gas, nitrogen is as pressure maintaining gas, nitrogen is also avoided while realizing that monocrystalline is straightened as protective gas instead of argon gas in nitrogen to react with monocrystalline, both cost declining has been achieved the purpose that, product quality is in turn ensured simultaneously.
Description
Technical field
The utility model belongs to silicon single crystal production technical field, more particularly, to a kind of full nitrogen silicon single crystal crystal pulling device.
Background technique
In the prior art, the overall process of silicon single crystal crystal pulling production is used as protection gas using high-purity argon gas, to protect monocrystalline
The growth of silicon rod, with the increase of silicon rod diameter, the entire production process time is constantly extending, meanwhile, the high-purity argon of consumption
Gas is also more and more, and production cost is caused to be continuously increased；Or the gaseous mixture by being passed through argon gas and nitrogen is produced into reduce
This, but the ratio of argon gas and nitrogen controls difficulty in the actual production process, increases production burden, increases manpower and material resources,
In a disguised form increase production cost.
Currently, being passed through the high pure nitrogen of low cost using whole process to substitute high-purity argon gas as guarantor by the improvement of technology
Gas is protected to reduce production cost, but since nitrogen and pasc reaction generate silicon nitride and circulate silicon melt during production
Nitrogen precipitation will affect into crystalline substance.
Summary of the invention
The purpose of this utility model is the problems in background technique to be solved, and provides a kind of full nitrogen silicon single crystal crystal pulling dress
It sets.
In order to solve the above technical problems, the technical solution adopted in the utility model is: a kind of full nitrogen silicon single crystal crystal pulling dress
It sets, including furnace body, setting crucible, guide shell and the suspension arrangement for hanging the guide shell, the water conservancy diversion in the furnace body
Cylinder is located at the top of the crucible, and nitrogen inlet is offered at the top of the furnace body, and the suspension arrangement includes hollow hangs
Arm and air inlet disk, the air inlet disk are fixedly connected on the bottom of the cantilever, and the furnace body is stretched out in one end of the cantilever, described
The other end of cantilever is protruded under the bell of the furnace body and is connected to the air inlet disk, and the top of the cantilever connects argon inlet pipe
Road.
Further, the air inlet disk is hollow structure, and the top of the air inlet disk is connected to the bottom of the cantilever, institute
The bottom for stating air inlet disk is equipped with venthole, and the venthole direction is close to the position of melt in crucible.
Further, the cantilever is set as multiple, and the top of one of them cantilever is equipped with argon inlet mouth, is used for
Argon inlet pipeline is connected, the cantilever connects power mechanism, for going up and down the suspension arrangement.
Further, the inboard wall of furnace body is additionally provided with attemperator, and having heaters is arranged in the attemperator, described to add
Hot device heats the side of the crucible.
Further, the bottom of the heater is connected with electrode column, and the electrode column connects power supply.
It further, further include crucible bar in the furnace body, one end of the crucible bar is fixedly connected on the bottom of the crucible,
The other end of the pot bar stretches out the furnace body.
Further, the sidewall of the furnace body is equipped with the pumping through-hole through the furnace body and the insulation barrel.
The utility model has the advantages and positive effects of:
1. replacing high-purity argon gas using high pure nitrogen, production cost is reduced, by being passed through argon gas conduct near liquid level
Protective gas is passed through nitrogen in other positions with furnace pressure needed for maintaining monocrystalline normal growth, reduces crystal region nitrogen and molten silicon
Reaction, reduce the content of nitrogen in monocrystalline, while reducing the generation of silicon nitride.
2. avoiding the silicon nitride crystal precipitation of saturation from leading to the disconnected bud of monocrystalline, using argon gas as localised protection gas, nitrogen
As pressure maintaining gas, realizing that it is anti-with monocrystalline that nitrogen replaces argon gas to also avoid nitrogen while monocrystalline is straightened as protective gas
It answers, has both achieved the purpose that cost declining, while in turn ensuring product quality.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of an embodiment of the present invention.
Fig. 2 is the structural schematic diagram of the air inlet disk of an embodiment of the present invention.
In figure:
1, furnace body 2, suspension arrangement 3, attemperator
4, electrode column 5, guide shell 6, crucible
7, heater 8, crucible bar 9, pumping through-hole
10, nitrogen inlet 21, argon inlet mouth 22, cantilever
23, air inlet disk 231, venthole
Specific embodiment
As shown in Figure 1, a kind of full nitrogen silicon single crystal crystal pulling device of this example, including furnace body 1, furnace body 1 is interior to be arranged crucible 6
With guide shell 5, crucible 6 uses silica crucible, and guide shell 5 is located at the top of crucible 6, and bottom and the crucible 6 of guide shell 5 do not connect
Touching, guide shell 5 is equipped with suspension arrangement 2, for hanging fixed guide shell 5, in the growth course of silicon single crystal rod, with silicon rod
Continuous growth, guide shell 5 is also required to be promoted together with argon gas access tube, passes through suspension dress by the way that setting suspension arrangement 2 is convenient
The lifting of 2 drive guide shells 5 is set, structure is simple, and it is easy to use, meet the needs of actual production.
The inner wall of furnace body 1 is additionally provided with attemperator 3, and attemperator 3 uses the high temperature resistant material of tubbiness, for example, silicon carbide,
Quartz etc., steel drum is interior to place thermal insulation material, and the top of insulation barrel is equipped with the insulation cover of annular, fixed in the inner ring of insulation cover to lead
Flow cartridge 5, is arranged having heaters 7 in attemperator 3, and in crucible 6 is enclosed in by heater, heater 7 adds the side of crucible 6
Heat, the bottom of heater are connected with electrode column 4, and it further includes the crucible bar 8 that 6 bottom of crucible is fixedly connected that electrode column 4, which connects power supply,
Crucible bar 8 stretches out the bottom of furnace body 1, and the outside of crucible bar 8 is also enclosed with protective quartz, and for protecting crucible bar 8,1 side wall of furnace body is set
There is the pumping through-hole 9 through furnace body 1 and insulation barrel.
Suspension arrangement 2 includes hollow cantilever 22 and air inlet disk 23, and air inlet disk 23 is fixedly connected on the bottom of cantilever 22, is hanged
One end of arm 22 is stretched out outside furnace body 1, and the other end of cantilever 22 is protruded under the bell of furnace body 1 and is connected to air inlet disk 23, cantilever 22
Top connects argon inlet pipeline, and argon inlet pipe 11 uses hose, facilitates connection, cantilever 22 can be set according to needs of production
It is set to multiple, two cantilevers 22 is set in this example, and the top of one of cantilever 22 is equipped with argon inlet mouth 21, for connecting
Argon inlet pipeline, the upper connection power mechanism of another cantilever 22 are used for lifting hanging device.
The top of furnace body 1 offers nitrogen inlet 10, and nitrogen inlet 10 is located at the top of furnace body, and nitrogen passes through nitrogen
Gas air inlet is passed through in furnace body 1.As shown in Fig. 2, air inlet disk 23 use in hollow disc structure, the top of air inlet disk 23 and outstanding
The bottom of arm 22 is connected to, and the bottom of air inlet disk 23 is equipped with venthole 231, and four ventholes 231, and venthole is arranged in this example
231 directions are close to the position of melt in crucible.It is passed through position of the mouth close to solution by the way that argon gas is arranged, prevents nitrogen anti-with solution
It answers, reduction crystal region nitrogen is reacted with molten silicon, the content of nitrogen in monocrystalline is reduced, while reducing the generation of silicon nitride,
High-purity argon gas is replaced using high pure nitrogen, reduces production cost, by being passed through argon gas near liquid level as protective gas,
Other positions are passed through nitrogen with furnace pressure needed for maintaining monocrystalline normal growth, and the silicon nitride crystal precipitation of saturation is avoided to cause monocrystalline disconnected
Bud, using argon gas as localised protection gas, nitrogen is realizing nitrogen instead of argon gas as protective gas drawing as pressure maintaining gas
Nitrogen is also avoided while straight monocrystalline to react with monocrystalline, has both achieved the purpose that cost declining, while in turn ensuring product quality.
The course of work of the present embodiment: during silicon single crystal crystal pulling, material, steady temperature, seeding, shouldering, turn shoulder, etc.
The stages such as diameter, ending are all made of nitrogen and are passed through in furnace body by the nitrogen inlet at the top of furnace body, meanwhile, argon gas passes through furnace body
The argon inlet mouth of two sides is passed into avoids the silicon nitride crystal precipitation of saturation from causing monocrystalline disconnected close to the position of melt in crucible
Bud, using argon gas as localised protection gas, nitrogen is realizing nitrogen instead of argon gas as protective gas drawing as pressure maintaining gas
Nitrogen is also avoided while straight monocrystalline to react with monocrystalline, has both achieved the purpose that cost declining, while in turn ensuring product quality.
The beneficial effects of the utility model are:
1. replacing high-purity argon gas using high pure nitrogen, production cost is reduced, by being passed through argon gas conduct near liquid level
Protective gas is passed through nitrogen in other positions with furnace pressure needed for maintaining monocrystalline normal growth, reduces crystal region nitrogen and molten silicon
Reaction, reduce the content of nitrogen in monocrystalline, while reducing the generation of silicon nitride.
2. avoiding the silicon nitride crystal precipitation of saturation from leading to the disconnected bud of monocrystalline, using argon gas as localised protection gas, nitrogen
As pressure maintaining gas, realizing that it is anti-with monocrystalline that nitrogen replaces argon gas to also avoid nitrogen while monocrystalline is straightened as protective gas
It answers, has both achieved the purpose that cost declining, while in turn ensuring product quality.
One embodiment of the utility model is described in detail above, but the content is only the utility model
Preferred embodiment should not be considered as limiting the scope of the present invention.It is all to be made according to application scope of the utility model
All the changes and improvements etc., should still belong within the patent covering scope of the utility model.
Claims (7)
1. a kind of full nitrogen silicon single crystal crystal pulling device, including furnace body, it is characterised in that: crucible, guide shell are arranged in the furnace body
With the suspension arrangement for hanging the guide shell, the guide shell is located at the top of the crucible, opens at the top of the furnace body
Equipped with nitrogen inlet, the suspension arrangement includes hollow cantilever and air inlet disk, and the air inlet disk is fixedly connected on described outstanding
The furnace body is stretched out in the bottom of arm, one end of the cantilever, the other end of the cantilever protrude under the bell of the furnace body with institute
Air inlet disk connection is stated, the top of the cantilever connects argon inlet pipeline.
2. a kind of full nitrogen silicon single crystal crystal pulling device according to claim 1, it is characterised in that: the air inlet disk is hollow
Structure, the top of the air inlet disk are connected to the bottom of the cantilever, and the bottom of the air inlet disk is equipped with venthole, the ventilation
Hole direction is close to the position of melt in crucible.
3. a kind of full nitrogen silicon single crystal crystal pulling device according to claim 2, it is characterised in that: the cantilever is set as more
A, the top of one of them cantilever is equipped with argon inlet mouth, and for connecting argon inlet pipeline, the cantilever connects power
Mechanism, for going up and down the suspension arrangement.
4. a kind of full nitrogen silicon single crystal crystal pulling device according to claim 1, it is characterised in that: the inboard wall of furnace body is also set
There is attemperator, having heaters is set in the attemperator, the heater heats the side of the crucible.
5. a kind of full nitrogen silicon single crystal crystal pulling device according to claim 4, it is characterised in that: the bottom of the heater
It is connected with electrode column, the electrode column connects power supply.
6. a kind of full nitrogen silicon single crystal crystal pulling device according to claim 1, it is characterised in that: further include in the furnace body
Crucible bar, one end of the crucible bar are fixedly connected on the bottom of the crucible, and the other end of the crucible bar stretches out the furnace body.
7. a kind of full nitrogen silicon single crystal crystal pulling device according to claim 1, it is characterised in that: the sidewall of the furnace body is equipped with
Through the pumping through-hole of the furnace body and insulation barrel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820526612.8U CN208395314U (en) | 2018-04-13 | 2018-04-13 | A kind of full nitrogen silicon single crystal crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820526612.8U CN208395314U (en) | 2018-04-13 | 2018-04-13 | A kind of full nitrogen silicon single crystal crystal pulling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208395314U true CN208395314U (en) | 2019-01-18 |
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ID=65065190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820526612.8U Active CN208395314U (en) | 2018-04-13 | 2018-04-13 | A kind of full nitrogen silicon single crystal crystal pulling device |
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| Country | Link |
|---|---|
| CN (1) | CN208395314U (en) |
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2018
- 2018-04-13 CN CN201820526612.8U patent/CN208395314U/en active Active
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