CN208362459U - The making apparatus and flywheel of annular single crystalline inorganic non-metallic component - Google Patents
The making apparatus and flywheel of annular single crystalline inorganic non-metallic component Download PDFInfo
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- CN208362459U CN208362459U CN201820859837.5U CN201820859837U CN208362459U CN 208362459 U CN208362459 U CN 208362459U CN 201820859837 U CN201820859837 U CN 201820859837U CN 208362459 U CN208362459 U CN 208362459U
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Abstract
The utility model provides the making apparatus and flywheel of annular single crystalline inorganic non-metallic component, and wherein making apparatus includes: to prepare container, matrix and matrix control assembly；Preparing container includes microwave office and plasma chamber, microwave office is isolated with plasma chamber, microwave generator is provided in microwave office, plasma chamber is provided with air inlet and vacuum plant, vacuum plant is for vacuumizing plasma chamber, and the indoor air pressure of plasma is controlled, plasma can be formed under microwave excitation by entering the unstrpped gas in plasma chamber from air inlet；Matrix is set to the indoor plasma distributed areas of plasma, and matrix control assembly is for controlling matrix rotation, so that the plasma-deposited outer circumference surface in matrix forms annular single crystalline inorganic non-metallic component.The annular single crystalline inorganic non-metallic component has the performances such as high rigidity, high-termal conductivity and low thermal coefficient of expansion, can be used as flywheel and is used in flywheel accumulator, so that the flywheel production of high energy storage density is possibly realized.
Description
Technical field
The utility model relates to manufacturing technology field, in particular to the making apparatus of annular single crystalline inorganic non-metallic component and
Flywheel.
Background technique
With the development of science and technology, energy consumption product using more more and more universal, the demand of energy storage device is also more and more.
Flywheel energy storage system is a kind of energy storage device of energy converting between mechanical, breaches the limitation of chemical cell, is realized with physical method
Energy storage.In energy storage, electric energy drives motor operation after converting by electric power converter, and motor drives flywheel to accelerate rotation, flywheel
Energy storage is got up in the form of kinetic energy, completes the storage energy process that electric energy is converted to mechanical energy, energy storage is in high speed
In the freewheel body of rotation.Later, motor maintains a constant revolving speed, until receiving an exergonic control signal；
When releasing energy, high-speed rotating flywheel dragging motor power generation is suitable for the electric current and voltage of load, completion through electric power converter output
The process that releases energy that mechanical energy is converted to electric energy.Entire flywheel energy storage system realizes input, storage and the output of electric energy
Process.
Theoretically, the power density of flywheel energy storage system is very high, unlimited number of high-power charge and discharge may be implemented, and to ring
Border is pollution-free.But the energy storage density of the flywheel energy storage of the prior art is lower, this is because the energy storage density of flywheel energy storage system, one
Aspect depends on the revolving speed of flywheel, on the other hand depends on the quality of rotor.But due to being limited by material, flywheel turns
When speed is excessively high, flywheel is easy to damage and even explodes, preferred material of the carbon fibre composite as flywheel at present, with compared with
Still still there is the possibility and danger of explosion when flywheel rotation speed reaches certain value in high tensile strength.
And it is well known that diamond and similar inorganic monocrystalline nonmetallic materials, hardness and intensity are big, and it is with good
Thermal conductivity and extremely low thermal expansion coefficient etc..Therefore, flywheel is manufactured using such inorganic monocrystalline nonmetallic materials, can broken through
Flywheel current energy storage technology develops the limited difficult point of material.
How but flywheel is manufactured using single crystalline inorganic nonmetallic materials and still remain the technological difficulties for being difficult to overcome.It is existing
In technology, the production method of inorganic monocrystalline non-metallic component includes direct method, molten coal method and epitaxy etc., but these methods synthesize
Inorganic monocrystalline non-metallic component all can not be used to make flywheel.When for example, by using direct synthesis diamond, the Buddha's warrior attendant of synthesis
Stone is polycrystal powder, and the diamond for using molten coal method to produce uses the diamond of epitaxy manufacture for abrasive-grade diamond
For graininess or tabular.Therefore, existing method can not make annular shape flywheel needed for flywheel accumulator.
Therefore, a kind of annular single crystalline inorganic non-metallic component of flywheel suitable for flywheel accumulator how is made, to mention
The energy storage density for rising flywheel energy storage system is our technical problems urgently to be resolved.
Utility model content
The making apparatus and flywheel for being designed to provide annular single crystalline inorganic non-metallic component of the utility model embodiment,
It is not available annular shape flywheel needed for single crystalline inorganic nonmetallic materials production flywheel accumulator to solve existing scheme
Technical problem.
In order to achieve the above object, concrete scheme provided by the embodiment of the utility model is as follows:
In a first aspect, the utility model embodiment provides a kind of making apparatus of annular single crystalline inorganic non-metallic component,
Annular monocrystalline is made using the production method of the annular single crystalline inorganic non-metallic component as described in any one of above-mentioned first aspect
Inorganic non-metallic component, the making apparatus include: that the making apparatus includes: to prepare container, matrix and matrix control assembly；
The container for preparing includes microwave office and plasma chamber, and the microwave office is isolated with the plasma chamber, described micro-
Microwave generator is provided in wave room, the plasma chamber is provided with air inlet and vacuum plant, and the vacuum plant is used for will
The plasma chamber vacuumizes, and controls the indoor air pressure of the plasma, enters in the plasma chamber from the air inlet
Unstrpped gas can form plasma under microwave excitation；
Described matrix is set to the indoor plasma distributed areas of the plasma, and described matrix control assembly is for controlling
Described matrix rotation processed, so that the plasma-deposited outer circumference surface in described matrix forms annular single crystalline inorganic non-metal portion
Part.
Optionally, described matrix control assembly includes matrix mounting platform and support holder device；
Described matrix and described matrix clamping device are all set on described matrix mounting platform；
Described matrix clamping device is for clamping described matrix fixed and rotation on described matrix mounting platform.
Optionally, described matrix clamping device includes supporter, shaft and driving device；
The supporter is set on described matrix mounting platform, and the shaft is erected on the supporter, and can
It is rotated relative to the supporter, the shaft and the driving device are sequentially connected, and described matrix is set in the shaft；
The driving device is for driving the shaft to rotate, so that the shaft drives described matrix rotation.
Optionally, the microwave office includes top cover and side wall, and the top cover lid closes on the side wall；
The top cover is slidably connected with the side wall by sliding part；
The microwave generator is set on the top cover；
The sliding part is for adjusting the distance between the top cover and the plasma chamber.
Optionally, the microwave office includes top cover and side wall, and the top cover lid closes on the side wall；
The top cover is slidably connected with the side wall by sliding part；
The microwave generator is set on the top cover；
The sliding part is for adjusting the distance between the top cover and the plasma chamber.
Optionally, circular ring shape load-bearing part, the socket ring and the connector is stated to be integrally formed.
Optionally, waveguide is additionally provided in the microwave office；
The output end of the microwave generator is connected to the input terminal of the waveguide, the output end direction of the waveguide
The plasma chamber；
The waveguide is used for the microwave transmission that generates the microwave generator to the plasma chamber.
Optionally, the microwave generator, the waveguide and described matrix are located on same hookup wire.
Optionally, the plasma chamber includes isolation cover and side boss, and the isolation the cover is closed in the side boss
On；
The side boss offers the air inlet；
The isolation cover is for being isolated the microwave office and the plasma chamber；
The air inlet is used to convey protective gas and unstrpped gas into the plasma chamber.
Second aspect, the utility model embodiment also provide a kind of flywheel, and the flywheel is using as appointed in first aspect
The annular single crystalline inorganic non-metallic component of the making apparatus production of annular single crystalline inorganic non-metallic component described in one.
In the utility model embodiment, microwave, microwave transmission to plasma are generated by the microwave office in making apparatus
In indoor vacuum environment, the indoor unstrpped gas of excitation plasma forms plasma.In this way, in matrix rotation, matrix
Outer circumference surface on can uniform deposition inorganic non-metallic plasma, so as on the outer circumference surface of matrix formed annular
Single crystalline inorganic non-metallic component.The annular single crystalline inorganic non-metallic component has high rigidity, high-termal conductivity and low thermal expansion system
The performances such as number, can be used as flywheel and are used in flywheel accumulator, so that the flywheel production of high energy storage density is possibly realized.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the utility model embodiment, the utility model embodiment will be retouched below
Attached drawing needed in stating is briefly described, it should be apparent that, the accompanying drawings in the following description is only the utility model
Some embodiments for those of ordinary skill in the art without any creative labor, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structure of the making apparatus of annular single crystalline inorganic non-metallic component provided by the embodiment of the utility model
Schematic diagram；
Fig. 2 is system applied by the making apparatus of annular single crystalline inorganic non-metallic component provided by the embodiment of the utility model
Make the flow diagram of method；
Fig. 3 is the structural schematic diagram of the matrix of making apparatus provided by the utility model embodiment.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
It clearly and completely describes, it is clear that the embodiments are a part of the embodiments of the present invention, rather than whole implementation
Example.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without creative efforts
The every other embodiment obtained, fall within the protection scope of the utility model.
Referring to Fig. 1, for a kind of making apparatus of annular single crystalline inorganic non-metallic component provided by the embodiment of the utility model
The structural schematic diagram of (hereinafter referred to as making apparatus) 10.The making apparatus 10 may include: to prepare container 100,200 and of matrix
Matrix control assembly 300；
The container 100 for preparing includes microwave office 110 and plasma chamber 120, the microwave office 110 and the plasma chamber
120 isolation, are provided with microwave generator 111 in the microwave office 110, and the plasma chamber 120 is provided with air inlet 123 and true
Empty device 130, vacuum plant 130 controls the air pressure in plasma chamber 120 for plasma chamber 120 to be evacuated, from institute
Plasma can be formed under microwave excitation by stating the unstrpped gas that air inlet 123 enters in the plasma chamber 120；
Described matrix 200 is set to the plasma distributed areas in the plasma chamber 120, and described matrix 200 controls
Component control described matrix 200 rotate so that the plasma-deposited outer circumference surface in described matrix 200 formed annular monocrystalline without
Machine non-metallic component.
The making apparatus 10 of annular single crystalline inorganic non-metallic component provided in this embodiment, for making annular single crystalline inorganic
Non-metallic component, such as prepare diamond synthesis, the synthesis not annular single crystalline inorganic non-metal portion such as Sang Shi or synthetic sapphire
Part etc..Single crystalline inorganic non-metallic component using the making apparatus 10 production has biggish intensity, is suitable for plurality of devices.Tool
Body, the annular single crystalline inorganic non-metallic component which can be made is used as the flywheel of flywheel accumulator, and energy
Enough meet the high speed rotation of flywheel accumulator and inexplosive demand, dramatically promotes the energy storage efficiency of flywheel accumulator.
Making apparatus 10 may include preparing container 100, matrix 200 and matrix control assembly 300, and matrix 200 is arranged
In making apparatus 10, matrix control assembly 300 is used to control the fixation and rotation of matrix 200.It prepares container 100 and production is provided
Environment and condition required for annular single crystalline inorganic non-metallic component, ring required for being formed on the outer circumference surface of matrix 200
Shape single crystalline inorganic non-metallic component.
Preparing container 100 may include microwave office 110 and plasma chamber 120, and microwave office 110 and plasma chamber 120 every
From setting.Microwave generator 111 is provided in microwave office 110, for generating microwave, and by generated microwave transmission to etc. from
Seed cell 120.Plasma chamber 120 is provided with air inlet 123, can input gas into plasma chamber 120 by air inlet 123,
Such as unstrpped gas or protective gas.Vacuum plant 130 is additionally provided in the microwave office, the vacuum plant 130 is used for
It will be evacuated or be used in plasma chamber 120 to control the air pressure in plasma chamber 120.Input the original in plasma chamber 120
Expect gas, plasma can be formed under the excitation for the microwave that microwave office 110 transmits.
In a specific embodiment, can by the microwave office 110 and the plasma chamber 120 along hookup wire successively
Setting, and the microwave office 110 is isolated with the plasma chamber 120.Specifically, microwave office 110 is isolated with plasma chamber close
Envelope, and by plasma chamber 120 and extraneous sealing, to guarantee the oxygen-free environment in plasma chamber 120.
Matrix 200 is the load bearing component of annular single crystalline inorganic non-metallic component, is used for deposition plasma.By matrix 200
It is set in plasma chamber 120, is specifically set to the plasma distribution region in plasma chamber 120.Matrix control assembly 300 is controlled
The stabilization of matrix 200 processed rotates in plasma distribution region, and in the plasma distribution region, so that in plasma chamber 120
The plasma-deposited outer circumference surface in matrix 200, and then formed needed for annular single crystalline inorganic non-metallic component.
Matrix control assembly 300 controls fixation and rotation of the matrix 200 in plasma chamber 120.Specifically, matrix controls
Matrix 200 is clamped and is controlled in plasma chamber 120 by component 300, and can control matrix 200 in perpendicular around matrix
200 center axis rotation, so that the outer circumference surface of matrix 200 is exposed in the deposition region of plasma.
It is the flow diagram of production method applied by making apparatus provided in this embodiment such as Fig. 2.As shown in Fig. 2,
The production method specifically includes that
Step 21 provides matrix；
Described matrix is placed in vacuum environment by step 22；
Step 23 is passed through unstrpped gas composition unstrpped gas environment to the vacuum environment；
Step 24, driving described matrix rotate and reach desired speed；
The unstripped gas of step 25, transmission microwave to the unstrpped gas environment, in unstrpped gas environment described in microwave excitation
Body forms plasma；
Step 26, described matrix outer circumference surface on receive deposition plasma, form annular single crystalline inorganic non-metal portion
Part.
In the above process, required matrix is set in vacuum environment, and unstrpped gas structure is passed through in vacuum environment
Form plasma at unstrpped gas environment, and by microwave excitation unstrpped gas, matrix be set in vacuum environment it is equal from
Sub- distributed areas.And the outer circumference surface of matrix is arranged towards plasma deposition direction, described matrix can be by titanium alloy or carbon
Cellulose fiber material is made.
It is passed through unstrpped gas from the air inlet of vacuum environment, and inwardly transmits microwave, is used to prepare plasma.To it is equal from
It is passed through before unstrpped gas in seed cell, needs that enclosed environment is evacuated first with vacuum plant, form vacuum environment.
In a specific embodiment, the construction method of vacuum environment locating for matrix includes:
It is passed through protective gas after sealing space is vacuumized, controls the intake of protective gas, makes the sealing space
Air pressure is less than 0.1 kPa.
The selection of unstrpped gas and protective gas can with the annular single crystalline inorganic non-metallic component of required production at
Divide and be consistent, for different components, required unstrpped gas and protective gas may be different.For example, if annular monocrystalline
Inorganic non-metallic component is diamond synthesis, then the unstrpped gas can be hydrogen and methane；If the non-gold of annular single crystalline inorganic
Belonging to component is synthesis Mo Sangshi, then the unstrpped gas can be methyl trichlorosilane and hydrogen；If the annular single crystalline inorganic
Non-metallic component is synthetic sapphire, then the unstrpped gas may include alchlor, hydrogen and carbon dioxide.The raw material
Gas may be the annular consistent gas of single crystalline inorganic non-metallic component of other and required production, be not limited thereto.
In a specific embodiment, the production method of provided annular single crystalline inorganic non-metallic component, Ke Yili
With a kind of making apparatus (hereinafter referred to as making apparatus) of annular single crystalline inorganic non-metallic component, annular monocrystalline required for being made
Inorganic non-metallic component.The making apparatus has matrix required for this method, unstrpped gas environment and plasma etc..
In conjunction with the making apparatus, the specific implementation process of production method provided in this embodiment can be with are as follows:
The matrix control assembly 300 of making apparatus 10 is opened, so that driving device 323 is rotated with kinetoplast 200, and is reached
Desired speed, the desired speed can be 5 revs/min to 1000 revs/min.10 microwave generator 111 of making apparatus is opened,
So that microwave generator 111 generates microwave, and it is transmitted in plasma chamber 120 by waveguide 115.It is transmitted to plasma chamber
120 microwave motivates the unstrpped gas in plasma chamber 120, forms plasma.Plasma formed after in a certain range
Deposition, the matrix 200 rotated in the area, outer circumference surface receive plasma and deposit, required for being formed
Annular single crystalline inorganic non-metallic component.
Making apparatus provided in this embodiment generates microwave by microwave office in making apparatus, microwave transmission to etc.
In the indoor vacuum environment of ion, the indoor unstrpped gas of excitation plasma forms plasma.In this way, in matrix rotation,
On the outer circumference surface of matrix can uniform deposition inorganic non-metallic plasma, so as to be formed on the outer circumference surface of matrix
Annular single crystalline inorganic non-metallic component.It is swollen that the annular single crystalline inorganic non-metallic component has high rigidity, high-termal conductivity and low-heat
The performances such as swollen coefficient can be used as flywheel and be used in flywheel accumulator so that high energy storage density flywheel production become can
Energy.
On the basis of the above embodiments, described in step 22, before the step of described matrix is placed in vacuum environment, institute
Stating matrix may also pass through pretreatment, and the pretreated method may include:
Using bortz powder, the outer circumference surface of described matrix 200 is ground；
Use the outer circumference surface of deionized water and acetone cleaning described matrix 200；
Graphite is coated on the outer circumference surface of described matrix 200.
Before using 200 deposition plasma of matrix, bortz powder is first used, is ground in the outer circumference surface of matrix 200,
Reuse the outer circumference surface of deionized water and acetone cleaning described matrix 200.Finally, being coated on the outer circumference surface of matrix 200
It is nonmetallic can to effectively improve annular single crystalline inorganic using the outer circumference surface deposition plasma of the matrix 200 after coating for graphite
The preparation efficiency and quality of component.
On the basis of the above embodiments, described in step 25, transmit microwave to the unstrpped gas environment the step of it
Before, the method can also include:
Described matrix is heated, the temperature of described matrix is made to reach 400 degrees Celsius to 600 degrees Celsius.
In the present embodiment, the specific heating temperature of matrix 200 can be according to the single crystalline inorganic non-metallic component to be manufactured
Material it is different and different, be not construed as limiting.
It will be below diamond synthesis, synthetic sapphire and synthesis not mulberry according to the annular single crystalline inorganic non-metallic component
Stone, these three situations explain its preparation process respectively.
In a specific embodiment, the annular single crystalline inorganic non-metallic component is diamond synthesis.
In the present embodiment, the annular single crystalline inorganic non-metallic component of required production is diamond synthesis, then forms plasma
The unstrpped gas of body includes hydrogen and methane.Wherein, the flow of the hydrogen can be 200 standard milliliters/minute to 450 standards
Ml/min, the flow of the methane can be 10 standard milliliters/minute to 30 standard milliliters/minute；
After the step of being passed through unstrpped gas to the vacuum environment,
The air pressure of the unstrpped gas environment is greater than 6 kPas；
The transmission frequency of microwave is 0.8 girz to 6 girz, and output power is 0.6 kilowatt to 30 kilowatts；
Further, the gas pressure of unstrpped gas environment is controllable to 20 kPas to 40 kPas, to improve plasma
The deposition efficiency of body.
In the microwave office 110 transmission frequency of microwave be 0.8 girz to 6 girz, output power be 0.6 kilowatt extremely
30 kilowatts.
On the basis of the above embodiments, can also by the plasma chamber methane concentration control 6% to
20%；
Microwave Power Density is controlled in 0.1 kilowatt/cubic centimetre to 0.2 kilowatt/cubic centimetre.
The annular single crystalline inorganic non-metallic component is diamond synthesis, and the preparation process using making apparatus 10 specifically may be used
To include:
It provides and the outer circumference surface of the matrix 200 is used into granularity by the matrix 200 that titanium alloy or carbon fibre material make
Bortz powder for 0.5 micron is uniformly ground, then uses deionized water and acetone by the excircle of the matrix 200 after grinding respectively
Face cleans up, and dries up.Then, outer circumference surface after grinding coats one layer of graphite, the fettler before use can be completed
Make, matrix 200 is installed in the shaft 322 of Preparation equipment.
First plasma chamber 120 is evacuated by starting vacuum plant 130, is led to by air inlet 123 into plasma chamber 120
Enter protective gas, controls the pressure in plasma chamber 120 to 0.1 kPa such as nitrogen or argon gas, and by vacuum plant 130
Hereinafter, starting heater, is heated to 500 degrees Celsius to 600 degrees Celsius for matrix 200.
Unstrpped gas, including hydrogen and methane are passed through into plasma chamber 120.Wherein, the flow for being passed through hydrogen is 200 marks
Quasi- ml/min to 450 standard milliliters/minute, the flow of the methane be 10 standard milliliters/minute to 30 standard milliliters/point
Clock, and controlled the gas pressure in plasma chamber 120 at 6 kPas or more by vacuum plant 130.Specifically, in order into one
Step improves deposition efficiency, and the concentration that methane can also be arranged is 6% to 20%；Microwave Power Density is 0.1 kilowatt/cubic centimetre
To 0.2 kilowatt/cubic centimetre；Gas pressure in the plasma chamber 120 is 20 kPas to 40 kPas.
Driving device 323 is opened, so that driving device 323 starts to rotate by shaft 322 with kinetoplast 200, reaches pre-
Determine revolving speed.The desired speed can be 5 revs/min to 1000 revs/min.
Microwave generator 111 is opened, the input frequency that microwave is arranged is 0.8 girz to 6 girz, and power is 0.6 thousand
Watt to 30 kilowatts.Specifically, the input frequency for being preferably provided with microwave is 2.45 girz, power is 6 kilowatts.
Microwave generator 111 generates microwave, is transmitted to plasma chamber 120, motivates the unstrpped gas in plasma chamber 120,
Form plasma.Adjust matrix control assembly 300 so that matrix 200 be located at plasma optimal placement state just under
Side.In plasma deposition process, driving device 323 drives matrix 200 first to rotate a circle with faster speed, then controls matrix
200 revolving speed is gradually steady and declines.After the plasma-deposited predetermined time, annulus can be formed on the excircle of matrix 200
The diamond of shape, i.e., required annular single crystalline inorganic non-metallic component.
In the deposition process of above-mentioned plasma, the temperature of real-time monitoring matrix 200, and by cold-heat-exchanging exchange system 400
The temperature of matrix 200 is controlled in preset temperature range.After depositing to preset time, microwave generator 111, air inlet are successively closed
Mouth 123, driving device 323 and vacuum plant 130.It, can be from shaft when temperature in plasma chamber 120 is reduced to room temperature
Annular diamond component is taken out on matrix 200 on 322.
In another embodiment specific implementation mode, the annular single crystalline inorganic non-metallic component is synthesis Mo Sangshi.
In the present embodiment, the annular single crystalline inorganic non-metallic component of required preparation is synthesis Mo Sangshi, then required raw material
Gas includes methyl trichlorosilane and hydrogen.Wherein, the flow of the methyl trichlorosilane is 60 standard milliliters/minute to 100
The flow of standard milliliters/minute, the hydrogen is 600 standard milliliters/minute to 1000 standard milliliters/minute, and passes through vacuum
Device 130 is by the pressure control in the plasma chamber 120 at 10 kPas or less.
The transmission frequency of microwave is 5 megahertzs to 20 megahertzs, and output power is 0.1 kilowatt to 0.28 kilowatt.
On the basis of the above embodiments, after step 26, the method can also include:
The concentration of the methyl trichlorosilane in the plasma chamber is controlled 2% to 5%；
By Microwave Power Density control for greater than 0.2 kilowatt/cubic centimetre.
The annular single crystalline inorganic non-metallic component be synthesis not Sang Shi when, can be with using the preparation process of making apparatus 10
It specifically includes:
It provides and the outer circumference surface of the matrix 200 is used into granularity by the matrix 200 that titanium alloy or carbon fibre material make
Bortz powder for 0.5 micron is uniformly ground, then uses deionized water and acetone by the excircle of the matrix 200 after grinding respectively
Face cleans up, and dries up.Then, outer circumference surface after grinding coats one layer of graphite, the fettler before use can be completed
Make, matrix 200 is installed in the shaft 322 of Preparation equipment.
First plasma chamber 120 is evacuated by starting vacuum plant 130, is led to by air inlet 123 into plasma chamber 120
Enter protective gas, controls the pressure in plasma chamber 120 to 0.1 kPa such as nitrogen or argon gas, and by vacuum plant 130
Hereinafter, starting heater, is heated to 500 degrees Celsius to 600 degrees Celsius for matrix 200.
Unstrpped gas, including methyl trichlorosilane and hydrogen are passed through into plasma chamber 120.Wherein, the methyl trichlorine
The flow of silane is 60 standard milliliters/minute to 100 standard milliliters/minute, the flow of the hydrogen be 600 standard milliliters/point
Clock controls the gas pressure in plasma chamber 120 at 10 kPas to 1000 standard milliliters/minute, and by vacuum plant 130
Below.Specifically, controlling the concentration of the methyl trichlorosilane 2% to 5%, and Microwave Power Density is controlled greater than 0.2 thousand
Watt/cubic centimetre.
Driving device 323 is opened, so that driving device 323 starts to rotate by shaft 322 with kinetoplast 200, reaches pre-
Determine revolving speed.The desired speed can be 5 revs/min to 1000 revs/min.
Microwave generator 111 is opened, the input frequency that microwave is arranged is 5 megahertzs to 20 megahertzs, and power is 0.1 kilowatt
To 0.28 kilowatt.Specifically, the input frequency for being preferably provided with microwave is 13.56 megahertzs, power is 0.1 kilowatt.
Microwave generator 111 generates microwave, is transmitted to plasma chamber 120, motivates the unstrpped gas in plasma chamber 120,
Form plasma.Adjust matrix control assembly 300 so that matrix 200 be located at plasma optimal placement state just under
Side.In plasma deposition process, driving device 323 drives matrix 200 first to rotate a circle with faster speed, then controls matrix
200 revolving speed is gradually steady and declines.After the plasma-deposited predetermined time, annulus can be formed on the excircle of matrix 200
The Mo Sangshi of shape, i.e., required annular single crystalline inorganic non-metallic component.
In the deposition process of above-mentioned plasma, the temperature of real-time monitoring matrix 200, and by cold-heat-exchanging exchange system 400
The temperature of matrix 200 is controlled in preset temperature range.After depositing to preset time, microwave generator 111, air inlet are successively closed
Mouth 123, driving device 323 and vacuum plant 130.It, can be from shaft when temperature in plasma chamber 120 is reduced to room temperature
Annular not Sang Shi component is taken out on matrix 200 on 322.
In another embodiment specific implementation mode, the annular single crystalline inorganic non-metallic component can be synthetic sapphire.
In the present embodiment, the annular single crystalline inorganic non-metallic component of required preparation is synthetic sapphire, then required raw material
Gas includes alchlor, hydrogen and carbon dioxide.Wherein, the temperature of the alchlor is 100 degrees Celsius to 150 Celsius
Degree, the flow of the carbon dioxide are 15 standard milliliters/minute to 75 standard milliliters/minute, and the flow of the hydrogen is 150 marks
Quasi- ml/min is to 250 standard milliliters/minute.
After the step of being passed through unstrpped gas to the vacuum environment,
The air pressure of the unstrpped gas environment is 0.55 kPa to 0.65 kPa；
The transmission frequency of microwave is 5 megahertzs to 20 megahertzs, and output power is 0.1 kilowatt to 0.28 kilowatt.
When the annular single crystalline inorganic non-metallic component is synthetic sapphire, preparation process be can specifically include:
It provides and the outer circumference surface of the matrix 200 is used into granularity by the matrix 200 that titanium alloy or carbon fibre material make
Bortz powder for 0.5 micron is uniformly ground, then uses deionized water and acetone by the excircle of the matrix 200 after grinding respectively
Face cleans up, and dries up.Then, outer circumference surface after grinding coats one layer of graphite, the fettler before use can be completed
Make, matrix 200 is installed in the shaft 322 of Preparation equipment.
First plasma chamber 120 is evacuated by starting vacuum plant 130, is led to by air inlet 123 into plasma chamber 120
Enter protective gas, controls the pressure in plasma chamber 120 to 0.1 kPa such as nitrogen or argon gas, and by vacuum plant 130
Hereinafter, starting heater, is heated to 400 degrees Celsius to 600 degrees Celsius for matrix 200.
Unstrpped gas, including alchlor, hydrogen and carbon dioxide are passed through into plasma chamber 120.Wherein, the trichlorine
The temperature for changing aluminium is 100 degrees Celsius to 150 degrees Celsius, and the flow of the carbon dioxide is 15 standard milliliters/minute to 75 standards
Ml/min, the flow of the hydrogen are 150 standard milliliters/minute to 250 standard milliliters/minute；The plasma chamber 120
Interior gas pressure is 0.55 kPa to 0.65 kPa.
Driving device 323 is opened, so that driving device 323 starts to rotate by shaft 322 with kinetoplast 200, reaches pre-
Determine revolving speed.The desired speed can be 5 revs/min to 1000 revs/min.
Microwave generator 111 is opened, the input frequency that microwave is arranged is 5 megahertzs to 20 megahertzs, and power is 0.1 kilowatt
To 0.28 kilowatt.Specifically, the input frequency for being preferably provided with microwave is 13.56 megahertzs, power is 0.2 kilowatt.
Microwave generator 111 generates microwave, is transmitted to plasma chamber 120, motivates the unstrpped gas in plasma chamber 120,
Form plasma.Adjust matrix control assembly 300 so that matrix 200 be located at plasma optimal placement state just under
Side.In plasma deposition process, driving device 323 drives matrix 200 first to rotate a circle with faster speed, then controls matrix
200 revolving speed is gradually steady and declines.After the plasma-deposited predetermined time, annulus can be formed on the excircle of matrix 200
The sapphire of shape, i.e., required annular single crystalline inorganic non-metallic component.
In the deposition process of above-mentioned plasma, the temperature of real-time monitoring matrix 200, and by cold-heat-exchanging exchange system 400
The temperature of matrix 200 is controlled in preset temperature range.After depositing to preset time, microwave generator 111, air inlet are successively closed
Mouth 123, driving device 323 and vacuum plant 130.It, can be from shaft when temperature in vacuum plant 130 is reduced to room temperature
Annular sapphire part is taken out on matrix 200 on 322.
The production method of annular single crystalline inorganic non-metallic component provided by the embodiment of the utility model, for making other materials
When the annular single crystalline inorganic non-metallic component of material, according to specific gas raw material, the frequency and function of corresponding radio-frequency power supply are set
Rate, and the temperature for controlling matrix 200 reaches depositing temperature, can make the annular single crystalline inorganic non-metallic component of corresponding material.
The production method of annular single crystalline inorganic non-metallic component provided by the embodiment of the utility model, applied annular are single
The making apparatus setting microwave office of brilliant inorganic non-metallic component and plasma chamber, by the way that microwave is arranged in the microwave office
Device, so that forming plasma under the excitation for the microwave that the indoor unstrpped gas of plasma can generate in microwave office.Again
Matrix is set to the indoor plasma distributed areas of plasma, and matrix rotation is controlled by matrix control assembly 300, with
So that the plasma-deposited outer circumference surface in matrix, can form annular single crystalline inorganic non-metallic component.By annular monocrystalline without
Flywheel of the machine non-metallic component as flywheel accumulator can effectively promote the energy storage efficiency of flywheel accumulator.
It should be appreciated that cannot only be applied to above-mentioned flywheel using single crystalline inorganic non-metallic component obtained by the above method
The flywheel of accumulator can be equally used for other and need circular ring part, and the occasion more demanding to the strength of materials, herein not
It limits.
On the basis of the above embodiments, as shown in Figure 1, being also provided with microwave generator in the microwave office 110
111, for generating microwave.Waveguide 115 can also be set in the microwave office 110, the input terminal of the waveguide 115 with it is micro-
The output end of wave producer 111 is connected to, and the output end of waveguide 115 is arranged towards plasma chamber 120.In this way, microwave generator
111 microwaves generated can be transmitted to plasma chamber 120 by waveguide 115.
On the basis of the above embodiments, the microwave office 110 may include top cover 114 and side wall 113, the top cover
114 lids close on the side wall 113；
The top cover 114 is slidably connected with the side wall 113 by sliding part 112；
The microwave generator 111 and the waveguide 115 are all set on the top cover 114；
The sliding part 112 is for adjusting the distance between the top cover 114 and described plasma chamber 120.
The top cover 114 on side wall 113 closes by side wall 113 and lid in making apparatus 10 provided in this embodiment, microwave office 110
It encloses.Microwave generator 111 and waveguide 115 are arranged on top cover 114, top cover can be adjusted by sliding part 112
Relative position between 114 and side wall 113, can also change microwave generator 111 on top cover 114 and waveguide 115 with
The distance of 110 bottom end of microwave office, and then change the distance between top cover 114 and plasma chamber 120.By changing microwave generator
The distance between 111 and plasma chamber 120, the density of the microwave received in adjustable plasma chamber 120, and then change etc.
The deposition efficiency of ion chamber 120, to realize the adjusting to the producing efficiency of annular single crystalline inorganic non-metallic component.
Specifically, microwave office 110 can be circular cylindrical cavity made of the enclosing of cylindrical sidewall 113, the lid of top cover 114 is closed in side
Circular cylindrical cavity is formed by with closing on wall 113.The side wall 113 for constituting microwave office 110 can be made of metal material, metal
Side wall made of material can effectively prevent microwave from scattering and disappearing, stronger to the protecting effect of entire microwave generation environment.In other realities
It applies in mode, cooling system can also be set outside microwave office 110, effectively to control the temperature of microwave office 110.Specifically, micro-
Cooling system outside wave room 110 can be air cooling system or water-cooling system, other can control the cooling system of 110 temperature of microwave office
The scheme of system can be applied to the present embodiment, be not construed as limiting.
On the basis of the above embodiments, the plasma chamber 120 may include isolation cover 121 and side boss 122, institute
The lid of isolation cover 121 is stated to close on the side boss 122；
The side boss 122 offers the air inlet 123；
The isolation cover 121 is for being isolated the microwave office 110 and the plasma chamber 120；
The air inlet 123 is for conveying protective gas into the plasma chamber 120.
Making apparatus 10 provided in this embodiment, the lid of isolation cover 121 close on the top of plasma chamber 120, by plasma chamber
120 are effectively isolated with the microwave office 110 of 120 upper end of plasma chamber.Plasma chamber 120 may be symmetrically to set with microwave office 110
The circular cylindrical cavity set, more efficiently to receive the microwave that microwave office 110 transmits.
In a specific embodiment, isolation cover 121 can be quartz cover, close between quartz cover and side boss 122
Encapsulation is matched, and plays the preferable effect being isolated and seal, and can be by the plasma confinement in plasma chamber 120 in quartz cover
It is interior.
The plasma chamber 120 is provided with for vacuumizing and control air pressure in plasma chamber 120 in plasma chamber 120
Vacuum plant 130, the vacuum plant 130 include be arranged in plasma chamber 120 bottom connecting pipe 131 and with this
Connecting pipe 131 connect vacuum pump 132, by vacuum pump 132 can be realized to vacuumized in plasma chamber 120 and equity from
The control of air pressure in seed cell 120.
It on the basis of the above embodiments, is the producing efficiency for further increasing making apparatus 10, the microwave generator
111, the waveguide 115 and described matrix 200 can be located on same hookup wire.
The microwave office 110 and the plasma chamber 120 are set on same straight line, so that major function portion
Part, such as microwave generator 111, waveguide 115 and matrix 200 etc. are located on same hookup wire.In this way, microwave generator 111
The microwave of generation can be directly transferred to plasma chamber 120 by waveguide 115, and the unstrpped gas in plasma chamber 120 is micro-
Also therefore can produce the more plasma deposited towards described matrix 200 under wave excitation can be generated with higher efficiency
Required annular single crystalline inorganic non-metallic component.
On the basis of the above embodiments, described matrix control assembly 300 may include matrix mounting platform 310 and matrix
Clamping device 320；
Described matrix 200 and described matrix clamping device 320 are all set on described matrix mounting platform 310；
Described matrix clamping device 320 is for clamping the fixed and rotation on described matrix mounting platform 310 of described matrix 200
Turn.
Specifically, described matrix clamping device 320 may include supporter 321, shaft 322 and driving device 323；
The supporter 321 is set on described matrix mounting platform 310, and the shaft 322 is erected at the supporter
It on 321, and can be rotated relative to the supporter 321, the shaft 322 is sequentially connected with the driving device 323, the base
Body 200 is set in the shaft 322；
The driving device 323 is for driving the shaft 322 to rotate, so that the shaft 322 drives described matrix 200
Rotation.
Specifically, described matrix mounting platform 310 includes support platform 311 and telescopic rod 312, the telescopic rod 312 with
The support platform 311 connects；
The telescopic rod 312 is used to support the support platform 311, adjusts the height of the support platform 311.
The making apparatus 10 of above-mentioned annular single crystalline inorganic non-metallic component provided in this embodiment, matrix control assembly 300
Control the fixation and rotation of matrix 200.Matrix control assembly 300 includes matrix mounting platform 310 and support holder device 320,
Matrix 200 and support holder device 320 are set on matrix mounting platform 310, and matrix mounting platform 310 provides a supporting role,
Support holder device 320 clamps matrix 200 and fixes and rotate on matrix mounting platform 310.
Matrix mounting platform 310 includes support platform 311, and it is flat that matrix 200 and support holder device 320 are set to the support
On platform 311, plasma receive capabilities are realized.Support holder device 320 includes supporter 321, shaft 322 and driving device
323, supporter 321 is fixedly installed in support platform 311, for matrix 200 and its shaft being arranged 322 to be erected at this
In support platform 311.Shaft 322 is erected on the supporter 321, and enables the relatively described branch of the shaft 322
Gripping member 321 rotates.The end of the supporter 321 can be open semicircle holding tank, and the shaft 322 is placed on institute
It states in semicircle holding tank.The end of the supporter 321 may be closed round hole, and the shaft 322 passes through described
Round hole rotates in the round hole.Other are able to achieve shaft 322 and are erected on supporter 321 and can be with respect to supporter
The scheme of 321 rotations may be applicable to the present embodiment, be not construed as limiting.
The shaft 322 is horizontally mounted on described matrix mounting platform 310, and one end of supporter 321 and shaft 322 is living
Dynamic connection, the other end and driving device 323 of shaft 322 are sequentially connected, and matrix 200 is set in shaft 322.In this way,
The rotation of 323 drive shaft 322 of driving device, shaft 322 rotate in support platform 311 with kinetoplast 200, realize matrix 200
Outer circumference surface on plasma deposition.
Further, described matrix mounting platform 310 can also include telescopic rod 312, and the telescopic rod 312 and support are flat
Platform 311 connects, and to adjust support platform 311, and then realizes the adjusting for the matrix 200 in support platform 311 being arranged height.It is logical
The height of matrix 200 can effectively be adjusted by crossing telescopic rod 312, with change plasma in matrix 200 and plasma chamber 120 away from
From can effectively improve the deposition efficiency of 200 plasma of matrix.
The lower end of telescopic rod 312 can be fixed on the bottom interior wall of plasma chamber 120, or pass through the plasma chamber
120 bottom is fixed on equipment mounting platform.If the bottom fixation that the lower end of telescopic rod 312 passes through plasma chamber 120 is set
It is placed on equipment erecting bed, then first seal 313 can be set in the position that telescopic rod 312 passes through plasma chamber 120, to protect
Demonstrate,prove the vacuum environment in plasma chamber 120.Specifically, first seal 313 can be viton seal ring.
On the basis of the above embodiments, driving device 323 can be set in the outside for preparing container 100, and shaft 322 is worn
Cross quartz cover installation.Specifically, can shaft 322 pass through quartz cover position be arranged second seal 324, with improve etc. from
The leakproofness of seed cell 120.
On the basis of the above embodiments, it is contemplated that in the preparation process of annular single crystalline inorganic non-metallic component, plasma
It is hot environment in room 120.Therefore, the shaft 322 and supporter 321 can be selected as ceramic material, high temperature resistant uses the longevity
It orders longer.Shaft 322, which passes through the second seal 324 being arranged at quartz cover position, can choose high temperature resistant, and leakproofness is stronger
Lead metal sealing element, to further increase the service life of equipment.
On the basis of the above embodiments, heater can also be set in the plasma chamber 120, the heater is close
Described matrix 200 is arranged；And/or
The making apparatus 10 further includes cold-heat-exchanging exchange system 400, and the cold-heat-exchanging exchange system 400 is close to described matrix
200 settings.
In the present embodiment, heater is set near described matrix 200, for the preheating of matrix 200, to improve plasma
The deposition efficiency of body.
The accommodating chamber of the internal stretch of container 100 is prepared to this specifically, can be provided in the bottom for preparing container 100
Body 140, the receiving cavity 140 can be communicated with external environment.Cold-heat-exchanging exchange system 400 can be set in receiving cavity 140,
The environment temperature in container 100 is prepared for control.
Receiving cavity 140 is set to the underface of matrix mounting platform 310, and receiving cavity 140 can be directly by plasma
The side wall of room 120 is directly formed, or is formed by installing hollow cylinder component in the bottom of plasma chamber 120.If the appearance
Cavity 140 of receiving is formed by installing hollow cylinder component in the bottom of plasma chamber 120, then the hollow cylinder component
Cavity is receiving cavity 140.It further, can be in the outer wall of the hollow cylinder component and the side wall of plasma chamber 120
Third sealing element 141, the third sealing element 141 or viton seal ring is arranged in the position of 113 connections.
In a specific embodiment, cold-heat-exchanging exchange system 400 may include the fluid line being arranged along the vertical direction
410, and certain gap, recuperated gas are remained between the upper end of the fluid line 410 and the top inner wall of receiving cavity 140
Enter from the lower end of fluid line 410, and flowed out from the upper end of fluid line 410, after the top inner wall of receiving cavity 140
Outer wall along fluid line 410 flows out.After recuperated gas after outflow may return to external heat exchanger heat exchange, fluid is entered back into
410 cycle heat exchange of pipeline, to realize the heating or cooling to the top interior of receiving cavity 140.Since matrix is set to
On the matrix mounting platform 310 at 140 top of receiving cavity, the cold and hot regulation to 140 top inner wall of receiving cavity can pass through heat
Conduction is realized to matrix mounting platform 310, and the cold and hot regulation for the matrix 200 being set on matrix mounting platform 310.At it
In his embodiment, cold-heat-exchanging exchange system 400 can also use other heat exchange schemes, be not construed as limiting.
On the basis of the above embodiments, as shown in figure 3, described matrix 200 may include circular ring shape load-bearing part 220, if
The socket ring 210 being placed in the circular ring shape load-bearing part 220, and connect the circular ring shape load-bearing part 220 and the socket ring
210 connector 230, the circular ring shape load-bearing part 220 are coaxially disposed with the socket ring 210；
The shaft 322 is sequentially connected with the socket ring 210；
It is non-that the outer circumference surface of the circular ring shape load-bearing part 220 forms the annular single crystalline inorganic for deposition plasma
Metal parts.
Making apparatus 10 provided in this embodiment, applied matrix 200 may include socket ring 210, annular load-bearing part
And connector 230, circular ring shape load-bearing part 220 and central coaxial are arranged, socket ring 210 and circle are connected by connector 230
Then the socket ring 210 of matrix 200 is sequentially connected by annular load-bearing part 220 with shaft 322.In this way, driving device 323 drives
Shaft 322 rotates, and shaft 322 drives the socket ring 210 being sequentially connected therewith to rotate, and socket ring 210 drives circular ring shape load-bearing part
The outer circumference surface of 220 rotations, circular ring shape load-bearing part 220 is arranged towards the plasma deposition direction in the plasma chamber 120.This
Sample, in 220 rotary course of circular ring shape load-bearing part, the outer circumference surface of circular ring shape load-bearing part 220 can be used to deposition plasma, into
And form annular single crystalline inorganic non-metallic component.
Specifically, connector 230 can symmetrically be spaced apart from each other the flaabellum shape connection structure of setting at least two, it is used for
It is fixedly connected with socket ring 210 and circular ring shape load-bearing part 220.The connection structure for being spaced apart from each other setting by least two connects matrix
200 socket ring 210 and circular ring shape load-bearing part 220 to meet linkage function, and alleviates the weight and original of matrix 200 simultaneously
Expect cost.
In a specific embodiment, the circular ring shape load-bearing part 220, the socket ring 210 and the connector 230
It can also be integrally formed.The setting of matrix 200 is integrally formed structures, convenient for batch production processing, saves processing and dress
With process.
In a specific embodiment, described matrix 200 can be made of titanium alloy or carbon fibre material.
Matrix 200 selects titanium alloy, and perhaps carbon fibre material is made or the circular ring shape load-bearing part 220 of matrix 200 is by titanium
Alloy or carbon fibre material are made.Above-mentioned material density is smaller, and intensity is higher, mitigates the weight of matrix 200, ensure that base
The deposition effect of body 200 high-speed rotating stability and plasma, improves the generation of annular single crystalline inorganic non-metallic component
Efficiency.
The annular single crystalline inorganic non-metallic component made by above-mentioned making apparatus when being used as the flywheel of flywheel accumulator,
It can be used with matrix one directly as flywheel, i.e., directly will socket ring 210 and flywheel accumulator without being dismantled
Rotary shaft be coupled, it is simple, convenient.
The utility model embodiment further relates to a kind of flywheel, and the flywheel is to utilize making apparatus as shown in Figure 1 above
The annular single crystalline inorganic non-metallic component of production.
Flywheel provided by the embodiment of the utility model can be used for accumulator, make the non-gold of applied annular single crystalline inorganic
Making apparatus setting microwave office and the plasma chamber for belonging to component, by the way that rotatable matrix is arranged in plasma chamber, so that base
On the outer circumference surface of body can uniform deposition inorganic non-metallic plasma, so as to form ring on the outer circumference surface of matrix
Shape single crystalline inorganic non-metallic component.The annular single crystalline inorganic non-metallic component has high rigidity, high-termal conductivity and low thermal expansion
The performances such as coefficient can be used as flywheel and be used in flywheel accumulator, so that the flywheel production of high energy storage density is possibly realized.
Making apparatus structure is simple, cost is relatively low, and producing efficiency is higher.The tool of flywheel accumulator provided by the embodiment of the utility model
Body implementation process may refer to the specific implementation process of above-mentioned Fig. 1 and embodiment shown in Fig. 2, and this is no longer going to repeat them.
Above description is only a specific implementation of the present invention, but the protection scope of the utility model is not limited to
In this, anyone skilled in the art within the technical scope disclosed by the utility model, can readily occur in variation
Or replacement, it should be covered within the scope of the utility model.Therefore, the protection scope of the utility model should be wanted with right
Subject to the protection scope asked.
Claims (10)
1. a kind of making apparatus of annular single crystalline inorganic non-metallic component, which is characterized in that non-for making annular single crystalline inorganic
Metal parts, the making apparatus include: to prepare container, matrix and matrix control assembly；
The container for preparing includes microwave office and plasma chamber, and the microwave office is isolated with the plasma chamber, the microwave office
It is inside provided with microwave generator, the plasma chamber is provided with air inlet and vacuum plant, and the vacuum plant is used for will be described
Plasma chamber vacuumizes, and controls the indoor air pressure of the plasma, enters the original in the plasma chamber from the air inlet
Material gas can form plasma under microwave excitation；
Described matrix is set to the indoor plasma distributed areas of the plasma, and described matrix control assembly is for controlling institute
Matrix rotation is stated, so that the plasma-deposited outer circumference surface in described matrix forms annular single crystalline inorganic non-metallic component.
2. making apparatus according to claim 1, which is characterized in that described matrix control assembly includes matrix mounting platform
With support holder device；
Described matrix and described matrix clamping device are all set on described matrix mounting platform；
Described matrix clamping device is for clamping described matrix fixed and rotation on described matrix mounting platform.
3. making apparatus according to claim 2, which is characterized in that described matrix clamping device includes supporter, shaft
And driving device；
The supporter is set on described matrix mounting platform, and the shaft is erected on the supporter, and can be opposite
The supporter rotation, the shaft and the driving device are sequentially connected, and described matrix is set in the shaft；
The driving device is for driving the shaft to rotate, so that the shaft drives described matrix rotation.
4. making apparatus according to claim 1, which is characterized in that the microwave office includes top cover and side wall, the top
Lid lid closes on the side wall；
The top cover is slidably connected with the side wall by sliding part；
The microwave generator is set on the top cover；
The sliding part is for adjusting the distance between the top cover and the plasma chamber.
5. making apparatus according to claim 3, which is characterized in that described matrix includes circular ring shape load-bearing part, is set to
Socket ring in the circular ring shape load-bearing part, and the connector of the connection circular ring shape load-bearing part and the socket ring, it is described
Circular ring shape load-bearing part and the socket ring are coaxially disposed；
The shaft and the socket ring are sequentially connected；
The outer circumference surface of the circular ring shape load-bearing part forms the annular single crystalline inorganic non-metal portion for deposition plasma
Part.
6. making apparatus according to claim 5, which is characterized in that the circular ring shape load-bearing part, the socket ring and institute
State connector integrated molding.
7. making apparatus according to claim 1, which is characterized in that be additionally provided with waveguide in the microwave office；
The output end of the microwave generator is connected to the input terminal of the waveguide, and the output end of the waveguide is described in
Plasma chamber；
The waveguide is used for the microwave transmission that generates the microwave generator to the plasma chamber.
8. making apparatus according to claim 7, which is characterized in that the microwave generator, the waveguide and described
Matrix is located on same hookup wire.
9. making apparatus according to claim 1, which is characterized in that the plasma chamber includes that isolation cover and side are convex
Platform, the isolation the cover are closed on the side boss；
The side boss offers the air inlet；
The isolation cover is for being isolated the microwave office and the plasma chamber；
The air inlet is used to convey protective gas and unstrpped gas into the plasma chamber.
10. a kind of flywheel, which is characterized in that the flywheel is to utilize annular monocrystalline as claimed in any one of claims 1-9 wherein
The annular single crystalline inorganic non-metallic component of the making apparatus production of inorganic non-metallic component.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110551987A (en) * | 2018-06-04 | 2019-12-10 | 至玥腾风科技投资集团有限公司 | Method and equipment for manufacturing annular single crystal inorganic nonmetal component and flywheel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110551987A (en) * | 2018-06-04 | 2019-12-10 | 至玥腾风科技投资集团有限公司 | Method and equipment for manufacturing annular single crystal inorganic nonmetal component and flywheel |
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Address after: Room 301-1, No. 2 Xinfeng Street, Xicheng District, Beijing, 100088 (Desheng Park) Patentee after: Zhiyue Tengfeng Technology Group Co.,Ltd. Address before: Room 301-1, No. 2 Xinfeng Street, Xicheng District, Beijing, 100088 (Desheng Park) Patentee before: TECHNOLOGIES' XANADU OF RESONATORY-SOLAR-SYSTEMED Co.,Ltd. |
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Effective date of registration: 20210409 Address after: 100176 room 1202a, 12 / F, block B, building 1, yard 19, Ronghua Middle Road, economic and Technological Development Zone, Daxing District, Beijing Patentee after: Jin Pu Address before: Room 301-1, No. 2 Xinfeng Street, Xicheng District, Beijing, 100088 (Desheng Park) Patentee before: Zhiyue Tengfeng Technology Group Co.,Ltd. |