CN208315503U - For improving the edge ring and plasma etching apparatus in crystal round fringes region - Google Patents
For improving the edge ring and plasma etching apparatus in crystal round fringes region Download PDFInfo
- Publication number
- CN208315503U CN208315503U CN201820507666.XU CN201820507666U CN208315503U CN 208315503 U CN208315503 U CN 208315503U CN 201820507666 U CN201820507666 U CN 201820507666U CN 208315503 U CN208315503 U CN 208315503U
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- China
- Prior art keywords
- edge ring
- electrostatic chuck
- sub
- edge
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000013078 crystal Substances 0.000 title claims abstract description 22
- 238000001020 plasma etching Methods 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 230000011514 reflex Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The utility model relates to a kind of for improving the edge ring and plasma etching apparatus in crystal round fringes region, and the edge ring is ring-type, for being fixed on the edge of electrostatic chuck；When the edge ring is installed on electrostatic chuck, towards the side wall on the inside of the electrostatic chuck perpendicular to the electrostatic chuck surface.The edge ring can reduce the reflex of plasma, the loss for accelerating crystal column surface mask layer be avoided, to improve product yield.
Description
Technical field
The utility model relates to edge ring field more particularly to a kind of edge ring for improving crystal round fringes region and wait
Plasma etching device.
Background technique
In semiconductor dry etching, wafer is adsorbed by electrostatic chuck.The diameter of usual electrostatic chuck is greater than brilliant diameter of a circle,
To ensure that wafer can be completely placed on the electrostatic chuck.
But since electrostatic chuck is greater than wafer, it will lead to two problems: first, RF energy is unable to intensive work and exists
Crystal column surface；Second, the electrostatic chuck of crystal round fringes exposure is subject to plasma bombardment as cathodic region, pollutes,
Accelerate cathode wear.
In the prior art, edge ring is generallyd use, the edges of electrostatic chuck of crystal round fringes exposure is surrounded, thus on the one hand
RF energy concentration can be made to flow to crystal column surface, while also can protect cathode from plasma bombardment.
Currently used is a kind of edge ring with 80 ° of slopes, referring to FIG. 1, the edge ring of the prior art is in direction
The side of wafer, the side wall 10 with 80 ° of an inclination.During dry etching, inclined surface of the plasma in edge ring
It can reflect, the loss so as to cause the etching mask layer of crystal column surface is accelerated, outside the mask layer for making crystal round fringes region
Away from deficiency, and then lead to wafer etched features deviation.
Utility model content
The edge ring that technical problem to be solved by the utility model is to provide a kind of for improving crystal round fringes region and
Plasma etching apparatus reduces the loss of mask layer in wafer etching process, had not only been able to achieve the protection to electrostatic chuck, but also energy
Improve the product yield of plasma etching apparatus.
To solve the above-mentioned problems, the utility model provides a kind of for improving the edge ring in crystal round fringes region, institute
Edge ring is stated for ring-type, for being fixed on the edge of electrostatic chuck；When the edge ring is installed on electrostatic chuck, described in
Side wall on the inside of electrostatic chuck is perpendicular to the electrostatic chuck surface.
Optionally, the edge ring includes the first sub- edge ring and the second sub- side below the described first sub- edge ring
The width of edge ring, the second sub- edge ring is greater than the first sub- edge ring width；When the edge ring is installed on electrostatic chuck,
The first sub- edge ring is located on the outside of the wafer placement region of electrostatic chuck.
Optionally, the described first sub- edge ring towards the Sidewall Height on the inside of the electrostatic chuck be 0.07inch~
0.1inch。
Optionally, the material of the edge ring includes at least one of silicon, silica, silicon nitride, silicon carbide and quartz.
Optionally, comprising: electrostatic chuck, for adsorbing wafer to be etched；It is fixed on the edge of the edges of electrostatic chuck
Ring, the edge ring is towards the side wall on the inside of the electrostatic chuck perpendicular to the electrostatic chuck surface.
Optionally, the edge ring includes the first sub- edge ring and the second sub- side below the described first sub- edge ring
The width of edge ring, the second sub- edge ring is greater than the first sub- edge ring width；When wafer adsorption is when on the electrostatic chuck,
The second sub- edge loop section is located at below wafer, and the first sub- edge ring is located on the outside of wafer.
Optionally, the described first sub- edge ring towards the Sidewall Height on the inside of the electrostatic chuck be 0.07inch~
0.1inch。
Optionally, the material of the edge ring includes at least one of silicon, silica, silicon nitride, silicon carbide and quartz.
The edge ring of the utility model has vertical sidewall, and the reflex of plasma is reduced, thus reduce etc. from
Daughter reflection is lost caused by the mask layer of crystal round fringes, so as to further increase process window.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the edge ring of the prior art；
Fig. 2 is the schematic top plan view of the edge ring of one specific embodiment of the utility model；
Fig. 3 is the schematic diagram of the section structure of the edge ring of one specific embodiment of the utility model；
Fig. 4 is that the structural representation after wafer is placed in the plasma etching apparatus of one specific embodiment of the utility model
Figure.
Specific embodiment
With reference to the accompanying drawing to provided by the utility model for improving the edge ring and plasma in crystal round fringes region
The specific embodiment of etching device elaborates.
Fig. 2 and Fig. 3 are please referred to, is the structural schematic diagram of the edge ring of one specific embodiment of the utility model.Fig. 2 is institute
State the schematic top plan view of edge ring 100；Fig. 3 is the diagrammatic cross-section of the secant AA' along Fig. 2.
The edge ring 100 is ring structure, the part-structure for being fixed on the edge of electrostatic chuck, with electrostatic chuck
With one heart.The edge ring 100 is located at the wafer area periphery of electrostatic chuck, and for protecting electrostatic chuck, subject plasma is not invaded
Erosion.
Side wall is flattened side walls inside and outside the edge ring 100, vertical with the surface of the edge ring 100.Tool
Body, in this specific embodiment, when the edge ring 100 is installed on electrostatic chuck, the edge ring 100 is towards institute
The side wall on the inside of electrostatic chuck is stated perpendicular to the electrostatic chuck surface, in this way, when wafer is placed on the electrostatic chuck,
The edge ring 100 close to wafer side side wall perpendicular to crystal column surface.
In this specific embodiment, the edge ring 100 including the first sub- edge ring 101 and is located at the described first sub- side
Second sub- edge ring 102 of 101 lower section of edge ring, it is wide that the width of the second sub- edge ring 102 is greater than the first sub- edge ring 101
Degree.In the specific embodiment, the second sub- edge ring 102 is aligned with the outside side wall of the first sub- edge ring 101, the second son
102 inboard portion of edge ring protrudes from the lower section of the described first sub- edge ring 101.
Since the side wall of the edge ring 100 is vertical, after being installed on electrostatic chuck, in etching process, the edge
The reflex of 100 plasma of ring is reduced, to reduce plasma reflection damage caused by the mask layer of crystal round fringes
Consumption, so as to further increase process window.
The sub- edge ring 101 of the first of the edge ring 100 is located on the outside of the wafer placement region of electrostatic chuck, and described first
The inside side walls of sub- edge ring 101 are affected for the reflection of plasma to wafer.In the tool mode, described first
Sub- edge ring 101 towards the Sidewall Height L on the inside of the electrostatic chuck be 0.07inch~0.1inch, preferably, can be
0.086inch.The first sub- edge ring 101, perpendicular to electrostatic chuck, reduces towards the side wall on the inside of the electrostatic chuck
The reflection of plasma, thus avoid causing the mask layer on crystal round fringes surface in etching process too fast loss, into
And improve the yield of product.
The material of the edge ring 100 can be using at least one of silicon, silica, silicon nitride, silicon carbide and quartz.
In another specific embodiment of the utility model, a kind of plasma etching apparatus is also provided.
The plasma etching apparatus includes electrostatic chuck, is used for during plasma etch process, by quiet
Electro ultrafiltration adsorbs wafer to be etched.
The plasma etching apparatus further include: the edge ring 100 for being fixed on the edges of electrostatic chuck (please refers to figure
2 and Fig. 3), the edge ring 100 is towards the side wall on the inside of the electrostatic chuck perpendicular to the electrostatic chuck surface.The side
Edge ring 100 is towards the side wall on the inside of the electrostatic chuck perpendicular to the electrostatic chuck surface.The specific knot of the edge ring 100
Structure has elaborated in previous embodiment, and therefore not to repeat here.
Referring to FIG. 4, to place the schematic diagram after wafer 401 on electrostatic chuck.
When wafer 401 is adsorbed on the electrostatic chuck, second sub- 102 part of edge ring is located under wafer 401
Side, the first sub- edge ring 101 are located on the outside of wafer.
The first sub- edge ring towards the Sidewall Height on the inside of the electrostatic chuck be 0.07inch~0.1inch, compared with
Good, it can be 0.086inch.
Since the side wall of the edge ring 100 towards 401 side of wafer is vertical sidewall, the reflection of plasma is reduced
Effect, to will not accelerate the loss for the mask layer that 401 edge of wafer avoids, therefore, can increase etching technics window, and subtract
Few product yield loss.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (8)
1. a kind of for improving the edge ring in crystal round fringes region characterized by comprising
The edge ring is ring-type, for being fixed on the edge of electrostatic chuck；
When the edge ring is installed on electrostatic chuck, towards the side wall on the inside of the electrostatic chuck perpendicular to the electrostatic chuck
Surface.
2. according to claim 1 for improving the edge ring in crystal round fringes region, which is characterized in that the edge ring packet
Include the first sub- edge ring and the second sub- edge ring below the described first sub- edge ring, the width of the second sub- edge ring
Greater than the first sub- edge ring width；When the edge ring is installed on electrostatic chuck, the first sub- edge ring is located at electrostatic suction
On the outside of the wafer placement region of disk.
3. according to claim 2 for improving the edge ring in crystal round fringes region, which is characterized in that the first sub- side
Edge ring towards the Sidewall Height on the inside of the electrostatic chuck be 0.07inch~0.1inch.
4. according to claim 1 for improving the edge ring in crystal round fringes region, which is characterized in that the edge ring
Material includes any one in silicon, silica, silicon nitride, silicon carbide and quartz.
5. a kind of plasma etching apparatus characterized by comprising
Electrostatic chuck, for adsorbing wafer to be etched；
Be fixed on the edge ring of the edges of electrostatic chuck, the edge ring towards the side wall on the inside of the electrostatic chuck perpendicular to
The electrostatic chuck surface.
6. plasma etching apparatus according to claim 5, which is characterized in that the edge ring includes the first sub- edge
The width of ring and the second sub- edge ring below the described first sub- edge ring, the second sub- edge ring is greater than the first sub- side
Edge ring width；When wafer adsorption is when on the electrostatic chuck, the second sub- edge loop section is located at below wafer, and described the
One sub- edge ring is located on the outside of wafer.
7. plasma etching apparatus according to claim 6, which is characterized in that the first sub- edge ring is described in
Sidewall Height on the inside of electrostatic chuck is 0.07inch~0.1inch.
8. plasma etching apparatus according to claim 5, which is characterized in that the material of the edge ring include silicon,
Any one in silica, silicon nitride, silicon carbide and quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820507666.XU CN208315503U (en) | 2018-04-10 | 2018-04-10 | For improving the edge ring and plasma etching apparatus in crystal round fringes region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820507666.XU CN208315503U (en) | 2018-04-10 | 2018-04-10 | For improving the edge ring and plasma etching apparatus in crystal round fringes region |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208315503U true CN208315503U (en) | 2019-01-01 |
Family
ID=64719479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820507666.XU Expired - Fee Related CN208315503U (en) | 2018-04-10 | 2018-04-10 | For improving the edge ring and plasma etching apparatus in crystal round fringes region |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208315503U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048449A (en) * | 2019-12-05 | 2020-04-21 | 华虹半导体(无锡)有限公司 | Edge redundant film layer etching integrated device and method |
| CN111180370A (en) * | 2020-02-21 | 2020-05-19 | 北京北方华创微电子装备有限公司 | Wafer bearing tray and semiconductor processing equipment |
-
2018
- 2018-04-10 CN CN201820507666.XU patent/CN208315503U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048449A (en) * | 2019-12-05 | 2020-04-21 | 华虹半导体(无锡)有限公司 | Edge redundant film layer etching integrated device and method |
| CN111048449B (en) * | 2019-12-05 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Edge redundant film layer etching integrated device and method |
| CN111180370A (en) * | 2020-02-21 | 2020-05-19 | 北京北方华创微电子装备有限公司 | Wafer bearing tray and semiconductor processing equipment |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190101 |
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| CF01 | Termination of patent right due to non-payment of annual fee |