CN208315475U - A kind of RF MEMS Switches based on no relief hole top electrode structure - Google Patents
A kind of RF MEMS Switches based on no relief hole top electrode structure Download PDFInfo
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- CN208315475U CN208315475U CN201820928063.7U CN201820928063U CN208315475U CN 208315475 U CN208315475 U CN 208315475U CN 201820928063 U CN201820928063 U CN 201820928063U CN 208315475 U CN208315475 U CN 208315475U
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Abstract
A kind of RF MEMS Switches based on no relief hole top electrode structure, comprising: substrate；Microwave transmission line and driving electrodes, microwave transmission line include signal wire and ground wire, fracture are equipped in the middle part of microwave transmission line, driving electrodes are arranged in incision position；Top electrode, bottom electrode assembly and air bridges on microwave transmission line are set, the connection of the signal wire of top electrode one end and side, bottom electrode assembly and the signal wire of the other side connect, and the top electrode other end is vacantly arranged in above driving electrodes and extends to above bottom electrode assembly, and air bridges are connected to ground wire；And one be provide with above-mentioned each component encapsulation caps.The utility model beneficial effect is, without designing relief hole, have the advantages that it is simple and practical, facilitate impedance matching, low insertion loss, high-isolation, low driving voltage, suitable for mass production, improve the yield rate of switch, encapsulation caps can prevent microwave signal from revealing in the form of radiation, can micro-wave screening, facilitate switch microwave property promotion.
Description
Technical field
The utility model belongs to electronic component field, and in particular to a kind of radio frequency based on no relief hole top electrode structure
Mems switch.
Background technique
RF MEMS Switches are to pass through metal-metal contact or gold using a kind of microwave switch of MEMS technology production
Capacitor that category-dielectric-metal is formed transmits or is isolated microwave signal.Compared with traditional solid electronic device,
Have many advantages, such as that Insertion Loss is small, low in energy consumption, at low cost, the linearity is high, can be widely applied to mobile communication, aerospace, radar,
In the fields such as antenna.
Currently, having there is mature RF MEMS Switches product to introduce to the market in the world, the country is also in prototype design rank
Section.Main 13 institute of You Zhong electricity group of the research institution of domestic RF MEMS Switches, 55 institute of Zhong electricity group, Tsinghua University,
The units such as Peking University, Southeast China University, Northcentral University.The working frequency of current foreign countries' RF MEMS Switches up to 60GHz, but
40GHz is poor with super band switch performance.And domestic RF MEMS Switches are concentrated mainly on DC-40GHz, are engaged in 40-60GHz and penetrate
The research index of frequency mems switch is lower, can not meet simultaneously in DC-60GHz frequency range low insertion loss and high-isolation, in height
Frequency range generally selects paralleling switch to realize, not can guarantee the performance of low-frequency range, and can not meet low insertion loss, height simultaneously
The demand of isolation, low driving voltage.
Therefore propose that a kind of RF MEMS Switches based on no relief hole top electrode structure have without designing relief hole
It is simple and practical, facilitate the advantages of impedance matching, low insertion loss, high-isolation, low driving voltage, can be used in be lower than 10GHz
With the working frequency for being higher than 40GHz.
Utility model content
The purpose of this utility model is: providing a kind of RF MEMS Switches based on no relief hole top electrode structure, solves
The problem of high insertion loss of existing RF MEMS Switches, low isolation, high driving voltage.
The specific technical solution of the utility model is as follows:
A kind of RF MEMS Switches based on no relief hole top electrode structure, comprising:
The substrate of brace foundation is provided；
Microwave transmission line over the substrate and driving electrodes are set, and the microwave transmission line includes signal wire and ground
Line, the microwave transmission line middle part are equipped with fracture, and the driving electrodes are arranged in the incision position；
Top electrode, bottom electrode assembly and air bridges on microwave transmission line are set, described top electrode one end and side
The signal wire of signal wire connection, the bottom electrode assembly and the other side connects, and the driving is vacantly arranged in the top electrode other end
It above electrode and extends to above bottom electrode assembly, the air bridges are connected to the ground wire；
And one be provide with above-mentioned each component encapsulation caps.
Further, the top electrode setting is on the signal line and positioned at fracture in contrast to the bottom electrode assembly
Side, the top electrode are made of two lengthy motion pictures and two short-movies, and two lengthy motion pictures are arranged in parallel, and the short-movie both ends are respectively with two
The middle part of lengthy motion picture connects, and another short-movie both ends connect to form sealing end with the end of two lengthy motion picture the same sides respectively, it is described on
Electrode is integrally in " H " shape of an end closure, and the top electrode is open end, the top electrode in contrast to one end of the sealing end
Sealing end is connect with the side signal wire, and the top electrode open end is hanging and extends to above the bottom electrode assembly.
Further, the microwave transmission line includes: at least one signal wire and at least two ground wires, the signal wire are set
It sets in the central location of the substrate, the ground wire and the signal wire are arranged in parallel and are located at the signal wire two sides.
Further, the signal wire and ground wire middle position disconnect forming fracture, in the middle part of the signal wire and ground wire
Fracture is collectively formed one for the accommodation space of the driving electrodes to be arranged, and is all provided on the signal wire and ground wire close to incision position
It is equipped with fixed anchor point.
Further, the air bridges are set on the incision position of the ground wire, and the air bridges are separately connected the ground wire
The fixed anchor point of fracture two sides, by the ground conductive.
Further, the bottom electrode assembly is arranged on the signal line and is located at the fracture top electrode one on the contrary
Side, the bottom electrode assembly include: lower electrode, contact, spring beam, and the lower electrode is arranged on the signal line, under described
Electrode is arranged side by side close to fracture one end there are two fixed anchor point, and two spring beams are arranged in parallel, each fixed anchor point point
It not being connect with the spring beam one end, the spring beam extends to fracture direction, and the contact is arranged in the spring beam end,
Each contact respectively corresponds a lengthy motion picture.
Further, the accommodation space of the formation of the fracture in the middle part of the signal wire and ground wire is arranged in the driving electrodes
It is interior, and it is located at the signal wire incision position, the driving electrodes are located at below the top electrode, and the driving electrodes pass through lead
It is connected to outside.
Further, the shape of the contact is one of cuboid, hemisphere or cone.
The utility model beneficial effect is, using the utility model top electrode structure, since top electrode area is smaller, and
The hole of one larger area of formation between two root long pieces (cantilever beam) of top electrode, there is no need to design relief hole, so that it may
It flows out gas from the hole opened between the two sides and two root long pieces (cantilever beam) of top electrode, and then can reduce pole plate and transport up and down
Dynamic air damping, improve switching speed, have it is simple and practical, facilitate impedance matching, low insertion loss (- 0.7dB@60GHz),
It the advantages of high-isolation (- 20dB@60GHz), low driving voltage (being lower than 25V), is easily achieved in technique processing, is suitable for criticizing
Quantization production, improves the yield rate of switch, and the design of encapsulation caps can prevent microwave signal from revealing in the form of radiation,
Play the role of micro-wave screening, facilitates the promotion for switching microwave property.
Detailed description of the invention
Fig. 1 is the overall structure figure of the RF MEMS Switches；
Fig. 2 is the microwave transmission line and driving electrodes structure chart of the RF MEMS Switches；
Fig. 3 is the unencapsulated structure chart of the RF MEMS Switches；
Fig. 4 is the bottom electrode assembly structure chart of the RF MEMS Switches；
Fig. 5 is the top electrode of the RF MEMS Switches, lower electrode drive electrode structural chart；
Fig. 6 is the insertion loss analogous diagram of the RF MEMS Switches；
Fig. 7 is the isolation analogous diagram of the RF MEMS Switches；
Fig. 8 is the driving voltage analogous diagram of the RF MEMS Switches.
As shown in the figure, list of numerals is as follows:
1- substrate, 2- microwave transmission line, 3- driving electrodes, electrode under 4-, the contact 5-, 6- top electrode, 7- fixed anchor point, 8-
Air bridges, 9- spring beam, 10- encapsulation caps, 21- ground wire, 22- signal wire.
Specific embodiment
The embodiments of the present invention are described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and should not be understood as to the utility model
Limitation.
In the description of the present invention, it should be understood that term " center ", "upper", "lower", "front", "rear",
The orientation or positional relationship of the instructions such as "left", "right" is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of retouching
State the utility model and simplify description, rather than the combination of indication or suggestion meaning or element must have a particular orientation, with
Specific orientation construction and operation, therefore should not be understood as limiting the present invention.In addition, the utility model embodiment
During description, the device positions relationship such as "upper", "lower", "front", "rear", "left", "right" in all figures is mark with Fig. 1
It is quasi-.
The utility model is described further below in conjunction with attached drawing:
As shown in Figure 1, 2, 3, it is mentioned for the overall structure figure of the utility model embodiment and unencapsulated structure chart, the embodiment
Supply a kind of RF MEMS Switches based on no relief hole top electrode structure, comprising:
The substrate 1 of brace foundation is provided；
Microwave transmission line 2 on the substrate 1 and driving electrodes 3 are set, and the microwave transmission line 2 includes signal wire 22
With ground wire 21, fracture is equipped in the middle part of the microwave transmission line 2, the driving electrodes 3 are arranged in the incision position；
Top electrode 6, bottom electrode assembly and air bridges 8 on microwave transmission line 2, described 6 one end of top electrode and one are set
The signal wire 22 of side connects, and the signal wire 22 of the bottom electrode assembly and the other side connects, and 6 other end of top electrode is vacantly arranged in
3 top of driving electrodes simultaneously extends to above bottom electrode assembly, and the top electrode 6 passes through driving electrodes 3 with bottom electrode assembly
Control contact is connected to the ground wire 21 with the on-off to control signal wire 22, the air bridges 8 are disconnected；
And one be provide with above-mentioned each component encapsulation caps 10
As shown in Figure 2,3, the microwave transmission line 2 includes: at least one signal wire 22 and at least two ground wires 21, described
The central location of the substrate 1 is arranged in signal wire 22, and the ground wire 21 is arranged in parallel and is located at the signal wire 22
22 two sides of signal wire.A signal line 22 and two ground wires 21 are used in the present embodiment.
The signal wire 22 and 21 middle position of ground wire disconnect forming fracture, disconnected in the middle part of the signal wire 22 and ground wire 21
Mouth is collectively formed one for the accommodation space of the driving electrodes 3, close incision position on the signal wire 22 and ground wire 21 to be arranged
It is provided with fixed anchor point 7.
As shown in figure 3, the air bridges 8 are arranged on the incision position of the ground wire 21, the air bridges 8 are separately connected described
The fixed anchor point 7 of 21 fracture two sides of ground wire, so that the ground wire 21 is connected, driving electrodes 3 are convenient in the space of 8 lower section of air bridges
Lead draw.
As shown in Fig. 3,4,5, the wherein side on the signal wire 22 and being located at fracture is arranged in the bottom electrode assembly,
The bottom electrode assembly includes: lower electrode 4, contact 5, spring beam 9, and the lower electrode 4 is arranged on the signal wire 22 and position
In the wherein side of fracture, the i.e. side in contrast to top electrode 6, the lower electrode 4 close to fracture one end be arranged side by side there are two
Fixed anchor point 7, two spring beams 9 are arranged in parallel, and each fixed anchor point 7 is connect with 9 one end of spring beam respectively, institute
It states spring beam 9 to extend to fracture direction, the contact 5 is arranged in 9 end of spring beam.The lower electrode 4 is using with double bullets
Property beam 95 structure of double-contact, the contact 5 is respectively equipped on the spring beam 9, and leading for signal is controlled by the contact 5
Logical or closing.The shape of the contact 5 is one of cuboid, hemisphere or cone.Under other performances,
Lower electrode 4 can be used to substitute the signal wire 22 as the side.
As shown in Fig. 3,5, the top electrode 6 is arranged on the signal wire 22 and positioned at fracture in contrast to lower electrode group
Part side, that is, the other side for the fracture being located at, the top electrode 6 are made of two lengthy motion pictures 61 and two short-movies 62, two lengthy motion pictures
61 are arranged in parallel, and 62 both ends of short-movie are connect with the middle part of two lengthy motion pictures 61 respectively, another 62 both ends of short-movie respectively with
The end of two lengthy motion pictures, 61 the same side connects to form sealing end, whole " H " shape in an end closure of the top electrode 6, described to power on
Pole 6 is open end in contrast to one end of the sealing end, and 6 approximation of top electrode is inType.6 sealing end of top electrode with
Fixed anchor point 7 on the side signal wire 22 connects, and 6 open end of top electrode is hanging and extends to 9 top of spring beam, and two
The lengthy motion picture 61 respectively corresponds the contact 5 on a spring beam 9.Since top electrode area is smaller, and two root long pieces of top electrode are (outstanding
Arm beam) between one larger area of formation hole, there is no need to design relief hole, so that it may so that gas is from the two sides of top electrode
And two hole outflows for being opened between root long piece (cantilever beam), and then can reduce the air damping of pole plate up and down motion, raising is opened
Close speed.
In the accommodation space that the fracture that 21 middle part of the signal wire 22 and ground wire is arranged in the driving electrodes 3 is formed, and
Positioned at 22 incision position of signal wire, the driving electrodes 3 are located at 6 lower section of top electrode, and the driving electrodes 3 pass through lead
It is connected to outside.3 upper surface of driving electrodes covers one layer of dielectric layer, prevents it from sticking together with top electrode 6；
The lower electrode 4 is fixed on using 5 structure of double-contact with double spring beams 9, spring beam 9 by fixed anchor point 7
One incision position of signal wire 22 is respectively equipped with contact 5 on double spring beams 9, and contact 5 matches with 6 open end of top electrode and contacts；
It after driving electrodes 3 are powered, are bent downwardly the movable end of top electrode 6 and contact conducting with contact 5, when contact 5 and the one of top electrode 6
End in contact, then signal wire 22 is connected, the switch work；
The encapsulation caps 10 are fixed on right above substrate 1 by bonding material, prevent microwave signal from letting out in the form of radiation
Dew, plays the role of micro-wave screening.
Carrier structure of the substrate 1 as the RF MEMS Switches of double 9 contact of spring beam, 5 structures, described in carrying
Microwave transmission line 2, when applying driving voltage to the driving electrodes 3 by lead, the top electrode 6 and the driving electrodes
Electrostatic force is generated between 3, so that top electrode 6 generates bending towards 2 direction of microwave transmission line, is contacted with the contact 5, this
When, the RF MEMS Switches are in the open state；When the driving electrodes 3 do not apply driving voltage, the top electrode 6 with
The contact 5 mutually disconnects, at this point, the RF MEMS Switches are in close state.
As shown in fig. 6, obtaining the insertion loss of the utility model RF MEMS Switches using HFSS finite element emulation software
Analogous diagram is inserted into it can be seen that insertion loss performance is gradually deteriorated with the increase of working frequency in 60GHz frequency
Loss is less than 0.7dB.
As shown in fig. 7, imitative using the isolation that HFSS finite element emulation software obtains the utility model RF MEMS Switches
True figure, it can be seen that isolation performance is gradually deteriorated with the increase of working frequency, in 60GHz frequency, isolation is big
In 20dB.
As shown in figure 8, being the driving voltage analogous diagram of the utility model RF MEMS Switches, it can be seen that with drive
The increase of dynamic voltage, the RF MEMS Switches top electrode 6 based on type top electrode structure and the displacement between lower electrode 4 are gradually
Reduce, displacement is kept to zero when close to 25V driving voltage, and the utility model RF MEMS Switches are driven at this time, in closure
State.
Utility model principle is: RF MEMS Switches described in the utility model is applied, when driving electrodes 3 do not apply driving electricity
When pressure, top electrode 6 and contact 5 are disconnected, and are in off state switch.When applying driving voltage in driving electrodes 3, with voltage
Increase, the electrostatic force between top electrode 6 and driving electrodes 3 also increases with it, and contacts, makes out with contact 5 after being bent top electrode 6
Closing is open state.
The utility model beneficial effect is, using the utility model top electrode structure, since top electrode area is smaller, and
The hole of one larger area of formation between two root long pieces (cantilever beam) of top electrode, there is no need to design relief hole, so that it may
It flows out gas from the hole opened between the two sides and two root long pieces (cantilever beam) of top electrode, and then can reduce pole plate and transport up and down
Dynamic air damping, improve switching speed, have it is simple and practical, facilitate impedance matching, low insertion loss (- 0.7dB@60GHz),
It the advantages of high-isolation (- 20dB@60GHz), low driving voltage (being lower than 25V), is easily achieved in technique processing, is suitable for criticizing
Quantization production, improves the yield rate of switch, and the design of encapsulation caps can prevent microwave signal from revealing in the form of radiation,
Play the role of micro-wave screening, facilitates the promotion for switching microwave property.
Claims (8)
1. a kind of RF MEMS Switches based on no relief hole top electrode structure characterized by comprising
The substrate of brace foundation is provided；
Microwave transmission line over the substrate and driving electrodes are set, and the microwave transmission line includes signal wire and ground wire, institute
It states and is equipped with fracture in the middle part of microwave transmission line, the driving electrodes are arranged in the incision position；
Top electrode, bottom electrode assembly and air bridges on microwave transmission line, the signal of described top electrode one end and side are set
The signal wire of line connection, the bottom electrode assembly and the other side connects, and the driving electrodes are vacantly arranged in the top electrode other end
Top simultaneously extends to above bottom electrode assembly, and the air bridges are connected to the ground wire；
And one be provide with above-mentioned each component encapsulation caps.
2. RF MEMS Switches according to claim 1, which is characterized in that the top electrode setting is on the signal line
And positioned at fracture in contrast to the bottom electrode assembly side, the top electrode is made of two lengthy motion pictures and two short-movies, two length
Piece is arranged in parallel, and the short-movie both ends are connect with the middle part of two lengthy motion pictures respectively, another short-movie both ends respectively with two lengthy motion pictures
The end of the same side connects to form sealing end, and the top electrode is integrally in " H " shape of an end closure, and the top electrode is in contrast to institute
The one end for stating sealing end is open end, and the top electrode sealing end is connect with the side signal wire, and the top electrode open end is hanging
And it extends to above the bottom electrode assembly.
3. RF MEMS Switches according to claim 1, which is characterized in that the microwave transmission line includes: at least one
The central location of the substrate, the ground wire and the signal wire is arranged in signal wire and at least two ground wires, the signal wire
It is arranged in parallel and is located at the signal wire two sides.
4. RF MEMS Switches according to claim 3, which is characterized in that the signal wire and ground wire middle position disconnect
Fracture is formed, an accommodation space for being used to be arranged the driving electrodes is collectively formed in the fracture in the middle part of the signal wire and ground wire,
Fixed anchor point is provided with close to incision position on the signal wire and ground wire.
5. RF MEMS Switches according to claim 4, which is characterized in that the sky is arranged on the incision position of the ground wire
Air bridge, the air bridges are separately connected the fixed anchor point of ground wire fracture two sides, by the ground conductive.
6. RF MEMS Switches according to claim 2, which is characterized in that the bottom electrode assembly is arranged in the signal
On line and it is located at the fracture top electrode side on the contrary, the bottom electrode assembly includes: lower electrode, contact, spring beam, under described
Electrode is arranged on the signal line, and the lower electrode is arranged side by side there are two fixed anchor point, described in two close to fracture one end
Spring beam is arranged in parallel, and each fixed anchor point is connect with the spring beam one end respectively, and the spring beam prolongs to fracture direction
It stretches, the contact is arranged in the spring beam end, and each contact respectively corresponds a lengthy motion picture.
7. RF MEMS Switches according to claim 4, which is characterized in that the driving electrodes are arranged in the signal wire
In the accommodation space formed with the fracture in the middle part of ground wire, and it is located at the signal wire incision position, the driving electrodes are located at described
Below top electrode, the driving electrodes are connected to by lead with outside.
8. RF MEMS Switches according to claim 6, which is characterized in that the shape of the contact is cuboid, hemisphere
One of body or cone.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820928063.7U CN208315475U (en) | 2018-06-15 | 2018-06-15 | A kind of RF MEMS Switches based on no relief hole top electrode structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820928063.7U CN208315475U (en) | 2018-06-15 | 2018-06-15 | A kind of RF MEMS Switches based on no relief hole top electrode structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108648964A (en) * | 2018-06-15 | 2018-10-12 | 中北大学 | A kind of RF MEMS Switches based on no release aperture upper electrode arrangement |
| CN110691317A (en) * | 2019-10-24 | 2020-01-14 | 朝阳聚声泰（信丰）科技有限公司 | MEMS microphone capable of picking up sound in single direction and production method thereof |
| CN115662847A (en) * | 2022-11-16 | 2023-01-31 | 山东科技大学 | Series contact type radio frequency MEMS switch based on X wave band and manufacturing method thereof |
-
2018
- 2018-06-15 CN CN201820928063.7U patent/CN208315475U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108648964A (en) * | 2018-06-15 | 2018-10-12 | 中北大学 | A kind of RF MEMS Switches based on no release aperture upper electrode arrangement |
| CN110691317A (en) * | 2019-10-24 | 2020-01-14 | 朝阳聚声泰（信丰）科技有限公司 | MEMS microphone capable of picking up sound in single direction and production method thereof |
| CN115662847A (en) * | 2022-11-16 | 2023-01-31 | 山东科技大学 | Series contact type radio frequency MEMS switch based on X wave band and manufacturing method thereof |
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