CN208298873U - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN208298873U CN208298873U CN201820473404.6U CN201820473404U CN208298873U CN 208298873 U CN208298873 U CN 208298873U CN 201820473404 U CN201820473404 U CN 201820473404U CN 208298873 U CN208298873 U CN 208298873U
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- light emitting
- point material
- emitting device
- material layer
- quanta point
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Abstract
The utility model provides a kind of light emitting device, includes: circuit substrate, LED wafer, barrier layer, quanta point material layer and the protective layer for having heat-blocking action.LED wafer is set to the surface of circuit substrate.Barrier layer is formed in the surface of circuit substrate and is covered in LED wafer, and LED wafer is fully sealed, the thermal energy that barrier LED wafer generates is to external diffusion, and wherein barrier layer includes upper surface and the side edge surface engaged with upper surface.Quanta point material layer at least formed on barrier layer upper surface, directly to contact barrier layer.Outer surface of the protective layer at least formed on the part of quanta point material layer.
Description
Technical field
The utility model relates to a kind of light emitting devices, have quantum dot (Quantum Dots, QD) especially with respect to one kind
The light emitting device of material.
Background technique
Applications to nanostructures is topic popular in recent years, wherein quanta point material be typical nano material it
One.In display and lighting area, with the increasingly requirement to color saturation and luminous colour gamut, due to quanta point material itself
It is smaller with full width at half maximum (FWHM) (Full width at half maximum, FWHM), it is easier to realize high-penetration rate and guarantee high
The characteristic of colour gamut (NTSC), and composition material and size shape are penetrated to change lambda1-wavelength, for accurately controlling color
Point.Therefore, quanta point material is gradually imported into and applies among display or lighting area.
Referring to FIG. 1, the diagrammatic cross-section of the light emitting device for the prior art.Light emitting device shown in FIG. 1 is first to make
LED light lamp grain 8 that is packaged out and including quanta point material and then pass through surface mount technology (Surface
Mount Technology, SMT) one one LED light lamp grain 8 patch is welded on a circuit board 9 by processing procedure, with mould
The light emitting device of block chemical conversion sheet.Wherein, each LED light lamp grain 8 include bracket 80, LED wafer 81 and
Packaging adhesive material 82.LED wafer 81 is setting in the groove provided by bracket 80.Packaging adhesive material 82 is by quantum dot
Material 821 is mixed with the equal materials of glue material 822, and dispensing covers LED wafer 81 in the groove of bracket 80
Surface.In order to which light emitting device is made, every LED light lamp grain 8 for encapsulating completion must be using the SMT processing procedure of high temperature, such as
This will allow the packaging adhesive material 82 comprising quanta point material 821 together by the processing procedure of high temperature, therefore quanta point material 821 will
Deterioration is generated because of high temperature.In addition, quanta point material 821 also can be easy to generate oxidation with external environment because lacking effectively isolation
It reacts and causes life time decay.
In order to improve the above problem, the prior art more proposes a kind of improvement design, referring to FIG. 2, being another prior art
Light emitting device diagrammatic cross-section.Light emitting device shown in Fig. 2 is directly by bracket 80, LED wafer 81 and quantum
Point encapsulating structure 83 is packaged into a module for using, and set quantum dot encapsulating structure 83 is allowed to be not required to using high temperature system
Journey.
Bracket 80 includes the substrate 801 and frame 802 of tool wiring, and the design of a strip can be used in bracket 80.
Frame 802 includes support portion 8021 and accommodating space 8022, and support portion 8021 is used to support and set up quantum dot encapsulating structure 83；
Accommodating space 8022 is used to accommodate multiple LED wafers 81.LED wafer 81 is located in accommodating space 8022 simultaneously
And die bond is on substrate 801.Quantum dot encapsulating structure 83 is placed in support portion 8021, and wherein quantum dot encapsulating structure 83 is usually
Quanta point material 831 is sealed in a container 832, uses and effectively quanta point material 831 is avoided to contact and produce with external environment
Raw oxidation reaction.Packaging plastic 84 is filled in accommodating space 8022 and covers LED wafer 81, packaging plastic 84 in addition to
Come except encapsulating light emitting diode wafer 81, is even more used to fix the aforementioned quantum dot encapsulating structure for being set up in support portion 8021
83。
Although light emitting device shown in Fig. 2 can be to avoid the deterioration or oxidation of quanta point material, current quantum dot envelope
Assembling structure 83 is usually that quanta point material 831 is encapsulated using a glass container in design, a quantum item is made；Or it adopts
With a membrane material (such as PET) come coated quantum dots material 831, quantum dot diaphragm (QD Film) is made, in this way, quantum dot
Encapsulating structure 83 is by with certain thickness, at least more than 200 microns (μm).In addition, bracket 80 also needs to occupy certain sky again
Between, therefore, light emitting device will be unfavorable for applying on being increasingly particular about frivolous product.
In this regard, how to allow light emitting device possessing under effect brought by quanta point material, additionally it is possible to take into account product
Itself lightening, is the direction that present value obtains research and development.
Utility model content
Multiple embodiments of the utility model are by the improvement in structure, and direct storehouse is made in a manner of laminated,
It allows light emitting device that not only there is lightening advantage, and quanta point material can also be protected to avoid by high temperature or high humidity environment
It influences, extends service life when quanta point material is applied to light emitting device.
Some embodiments according to the present utility model provide a kind of light emitting device, it includes: circuit substrate, luminous two
Pole pipe chip, barrier layer, quanta point material layer and the protective layer for having heat-blocking action.Wherein, LED wafer is set to electricity
The surface of base board.Barrier layer is formed in the surface of circuit substrate and is covered in LED wafer, hair is fully sealed
Optical diode chip, the thermal energy that barrier LED wafer generates to external diffusion, wherein barrier layer include upper surface and with it is upper
The side edge surface of surface engagement.Quanta point material layer at least formed on barrier layer upper surface, directly to contact barrier layer.Protection
Outer surface of the layer at least formed on the part of quanta point material layer.
In some embodiments, quanta point material layer extends to form the side table in barrier layer from the upper surface of barrier layer
Face and the surface of circuit substrate, to coat barrier layer completely.
In some embodiments, the outer surface region of quanta point material layer is divided into upper outside surfaces and connects with upper outside surfaces
The side outer surface of conjunction, protective layer are formed in the upper outside surfaces of quanta point material layer, and from outside the upside of quantum dot material layer
Surface is extended to form in the side outer surface of quanta point material layer and the surface of circuit substrate, quanta point material is fully sealed
Layer.
In some embodiments, light emitting device further includes limit photosphere, is formed in surface and the barrier layer of circuit substrate
Side edge surface, and engaged with protective layer and barrier layer and quanta point material layer is fully sealed.Wherein, the appearance of quanta point material layer
The side outer surface that face is divided into upper outside surfaces and engaged with upper outside surfaces, and protective layer include light upper surface and with
The light emission side side surface of light upper surface engagement out.
In some embodiments, protective layer is formed in upper outside surfaces and the side outer surface of quanta point material layer.
In some embodiments, the height for limiting photosphere is equal to the surface of circuit substrate between the upper surface of barrier layer
Vertical range.
In some embodiments, limit photosphere is formed in the side outer surface of quanta point material layer, and protective layer is formed
In quanta point material layer upper outside surfaces and extend contact limit photosphere.
In some embodiments, the height for limiting photosphere is equal to outside the surface to the upside of quanta point material layer of circuit substrate
Vertical range between surface.
In some embodiments, protective layer is formed in the upper outside surfaces of quanta point material layer, and limits photosphere and formed
In the side outer surface of quanta point material layer and the light emission side side surface of protective layer.
In some embodiments, limit photosphere height be equal to circuit substrate surface to protective layer go out light upper surface it
Between vertical range.
In some embodiments, limit photosphere is light non-transmittable layers, to reflect the light of LED wafer injection.
In some embodiments, the vertical range of the upper surface of barrier layer or side edge surface to LED wafer is extremely
It is less 50 microns.
In some embodiments, light emitting device further includes radiating module, is set to circuit substrate relative to light-emitting diodes
The surface of pipe chip.
The above is only to illustrate the problem of the utility model is can solve, technical means to solve problem and its produce
Raw effect etc., the detail of the utility model by below embodiment and correlative type in be discussed in detail.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of the light emitting device of the prior art；
Fig. 2 is the diagrammatic cross-section of the light emitting device of another prior art；
Fig. 3 is the diagrammatic cross-section according to the light emitting device of the first embodiment of the utility model；
Fig. 4 is the diagrammatic cross-section according to the light emitting device of the second embodiment of the utility model；
Fig. 5 is the diagrammatic cross-section according to the light emitting device of the third embodiment of the utility model；
Fig. 6 is the diagrammatic cross-section according to the light emitting device of the 4th embodiment of the utility model；
Fig. 7 is the flow chart according to the manufacturing method of the light emitting device of the first embodiment of the utility model；
Fig. 8 is the flow chart according to the manufacturing method of the light emitting device of the second embodiment of the utility model；
Fig. 9 is the flow chart according to the manufacturing method of the light emitting device of the third embodiment of the utility model；And
Figure 10 is the flow chart according to the manufacturing method of the light emitting device of the 4th embodiment of the utility model.
Description of symbols:
10: circuit substrate
101: electrode contact
11: LED wafer
12: barrier layer
121: upper surface
122: side edge surface
13: quanta point material layer
131: upper outside surfaces
132: side outer surface
14: protective layer
141: going out light upper surface
142: light emission side side surface
15: limit photosphere
20: radiating module
8: LED light lamp grain
80: bracket
801: substrate
802: frame
8021: support portion
8022: accommodating space
81: LED wafer
82: packaging adhesive material
821,831: quanta point material
822: glue material
83: quantum dot encapsulating structure
832: container
84: packaging plastic
9: circuit board
D: distance
H: height
S701~S709: flow chart step explanation
S801~S809: flow chart step explanation
S901~S909: flow chart step explanation
S1001~S1009: flow chart step explanation
Specific embodiment
Multiple embodiments that the utility model will be disclosed with schema below, as clearly stated, in many practices
Details will be explained in the following description.It should be appreciated, however, that the details in these practices does not apply this with limitation practical new
Type.In addition, some known usual structures will be in a manner of simply illustrating in the drawings with component for the sake of simplifying schema
It.Furthermore the positions words such as "upper", "lower", "left", "right", "inner", "outside", " side " mentioned in embodiment, which only refer to, works as
The relative position of preceding given view, rather than absolute position, in embodiments, "upper" and "outside" refer to relatively close to user
Side.
Referring to FIG. 3, for according to the diagrammatic cross-section of the light emitting device of the first embodiment of the utility model.This implementation
The light emitting device of mode is a modular construction, may be directly applied to the electronic products such as various display equipment, lighting device.It shines
Device is the modular construction of sheet aspect, and can be and be rendered as the sheet aspect of various shapes such as strip, circle,
This is not limited by the utility model.Light emitting device includes: circuit substrate 10, LED wafer 11, tool heat-blocking action
Barrier layer 12, quanta point material layer 13 and protective layer 14.
LED wafer 11 is set to the surface of circuit substrate 10, is for example to be set to circuit base in present embodiment
The overhead surface of plate 10, specifically, LED wafer 11 can be for example with surface mount technology (Surface Mount
Technology, SMT) by the reflow oven processing procedure of high temperature come direct die bond routing in the surface of circuit substrate 10, electrically to connect
Circuit substrate 10 is connect, the temperature of high temperature is greater than 260 DEG C.In one embodiment, LED wafer 11 can be
One or more.In another embodiment, LED wafer 11 can be for example blue light-emitting diode chip.
The barrier layer 12 of tool heat-blocking action is formed in the surface of circuit substrate 10, that is, with LED wafer 11
In the same surface of circuit substrate 10, for being covered in LED wafer 11, specifically, barrier layer 12 is to be covered in hair
All surface of the optical diode chip 11 other than the face contacted with circuit substrate 10, LED wafer is fully sealed
11, the thermal energy that generates is to external diffusion when barrier LED wafer 11 operates.In one embodiment, the material of barrier layer 12
Be for example comprising glue material and barrier particulate matter, and be an euphotic design.Wherein, barrier particulate matter accounts for whole weight
Amount percentage is no more than 5%, in preferable embodiment, barrier particulate matter account for whole weight percent be 2%~
3%.In addition, glue material, which can be for example, selects silica gel (Silicone) or epoxy resin (Epoxy), and obstructing particulate matter can be such as
It is selected from any of silica (SiO2), titanium dioxide (TiO2), boron nitride (BN) and zirconium dioxide (ZrO2) or combination.It needs
Illustrate, it, can shape if barrier layer 12 obstructs particulate matter in design and accounts for if whole weight percent is greater than 5%
At impermeable light effect.
In addition, barrier layer 12 provides a upper surface 121 and and upper surface after LED wafer 11 is fully sealed
A side surfaces 122 of 121 engagements, wherein side edge surface 122 refers in addition to upper surface 121 and opposite with upper surface 121
All surface except lower surface, side edge surface 122 is practical for example to may include four according to the shape that barrier layer 12 is sealed to form
A surface, five surfaces etc., so that barrier layer 12 is quadrangle, pentagon etc. in the cross section of upper surface 121, it is not herein this
Utility model is limited.In other embodiment, side edge surface 122 is also possible to integrated arcuate surface, so that resistance
Interlayer 12 is circle in the cross section of upper surface 121.
It is noted that generated heat when barrier layer 12 is in order to effectively obstruct the running of LED wafer 11
Can, it avoids that thermal energy is allowed to influence quantum dot material layer 13 and cause to deteriorate, in one embodiment, the upper surface 121 of barrier layer 12
Or the vertical range D of side edge surface 122 to LED wafer 11 is preferably at least designed as 50 microns, that is, barrier layer
12 thickness is preferably at least 50 microns.
Quanta point material layer 13 at least formed on barrier layer 12 upper surface 121, and directly contact barrier layer 12.At this
In embodiment, quanta point material layer 13 is to extend to form from the upper surface of barrier layer 12 121 in the side edge surface of barrier layer 12
122 and circuit substrate 10 surface, to coat barrier layer 12 completely.In structure, being formed by quanta point material layer 13 has
One outer surface, the outer surface can further discriminate between as a upper outside surfaces 131 and the side engaged with upper outside surfaces 131
Side outer surface 132.In the present embodiment, since quanta point material layer 13 is to be covered in barrier layer 12, quanta point material
The upper outside surfaces 131 of layer 13 are corresponding 121 tops of upper surface for being located at barrier layer 12；And side outer surface 132 is corresponding position
In the outside of the side edge surface 122 of barrier layer 12, and with barrier layer 12 be formed by sealing shape and include quantity it is identical and
The identical surface of shape.In another embodiment, quanta point material layer 13 thickness (from the upper surface of barrier layer 12 121 to
The vertical range of the upper outside surfaces 131 of quanta point material layer 13) it can for example be designed as 50 microns.
The material of quanta point material layer 13 can be selected according to actual design, and not the utility model is limited herein, citing
For, quanta point material can be cadmium system quantum dot, such as the core shell (Core-shell) of cadmium selenide/cadmium sulfide (CdSe/CdS)
Structure, indium phosphide quantum dot, such as the core/shell structure of indium phosphide/zinc sulphide (InP/ZnS).Supplementary explanation has quantum
The light emitting device of point material layer 13 has the effect of improving colour gamut (NTSC) in one embodiment, have quanta point material layer
20% or more NTSC can be improved compared to traditional light emitting diode for 13 light emitting device.
Partial outer face of the protective layer 14 at least formed on quanta point material layer 13.In the present embodiment, protective layer 14
The upper outside surfaces 131 of quanta point material layer 13 are formed in, and are extended to form from the upper outside surfaces of quantum dot material layer 13 131
In the side outer surface 132 of quanta point material layer 13 and the surface of circuit substrate 10, quanta point material layer 13 is fully sealed.?
In structure, protective layer 14 includes a light emission side side surface 142 for light upper surface 141 and engaging with light upper surface 141 out.?
In present embodiment, since protective layer 14 is to be completely covered by quanta point material layer 13, protective layer 14 goes out light upper surface
141 be corresponding 131 top of upper outside surfaces for being located at quanta point material layer 13；And light emission side side surface 142 is corresponding positioned at amount
The outside of the side outer surface 132 of son point material layer 13, and include as quanta point material layer 13 is formed by wrapped shapes
Quantity is identical and the identical surface of shape.In another embodiment, the light emission side side surface 142 of protective layer 14 can also need not be with
Quanta point material layer 13 shape, and light side edge surface 142 can be conceded according to actual design demand and include and quantum dot
The side outer surface 132 quantity difference of material layer 13 and/or variform surface.
In one embodiment, protective layer 14 is a photic zone, and material can be selected from material identical with barrier layer 12.
Certainly, in other embodiments, the material of protective layer 14 is also selected from the material different from barrier layer 12.In addition, protective layer
14 thickness (vertical range for going out light upper surface 141 from the upper outside surfaces 131 of quantum dot material layer 13 to protective layer 14)
50 microns can be for example designed as.
From the above, light emitting device made of present embodiment institute framework is the layer-by-layer storehouse system in a manner of laminated from inside to outside
It forms, in one embodiment, after LED wafer 11 is provided with, remaining is in barrier layer 12, quantum dot material
The laminated production method of the bed of material 13 and protective layer 14 can be for example successively by encapsulating and it is cured in a manner of come direct storehouse form, make
A modular construction can integrally be formed after storehouse processing procedure by obtaining, and light emitting device is allowed to have lightening advantage.In an embodiment
In, the light upper surface 141 out from the surface of circuit substrate 10 to protective layer 14 is formed by height H and is less than 400 microns.Another
In one embodiment, the light upper surface 141 out from the surface of circuit substrate 10 to protective layer 14 is formed by height H and is less than
300 microns.In addition, design of the light emitting device by barrier layer 12 and protective layer 14, allow quanta point material layer 13 can be avoided by
The influence of generated thermal energy when being operated to LED wafer 11, and can be avoided the temperature by external environment,
The influence of moisture and oxygen extends service life when quanta point material layer 13 is applied to light emitting device.
It further illustrates, since barrier layer 12 and protective layer 14 include barrier particulate matter, can increase luminous
The light dispersion effect of device.Further, since barrier layer 12 and protective layer 14 are for example, by using euphotic design, therefore this reality
Applying light caused by the LED wafer 11 in mode will not be by any obstruction, and can be completely by protective layer 14
Light upper surface 141 and light emission side side surface 142 are projected outward out, and light emitting device is allowed to have biggish light emitting angle and range.
The light emitting device of present embodiment further includes radiating module 20, is set to circuit substrate 10 relative to light emitting diode
The surface of chip 11, that is, the underlying surfaces of circuit substrate 10.Radiating module 20 is used to operate LED wafer 11
The thermal energy of generation sheds, and LED wafer 11 is avoided to cause service life to decay because of overheat.In one embodiment, it dissipates
Thermal modules 20 can by Mechanism Combination part (not shown) come direct-assembling in circuit substrate 10, in other embodiment,
Radiating module 20 can also be attached at circuit substrate 10 by bonding glue (not shown).
In addition, circuit substrate 10 includes wiring (not shown) and a pair of electrodes contact 101, this is to electrode contact 101
E.g. one positive electric contact and a negative electricity contact, for receiving the power supply of an external power supply (not shown).Circuit substrate 10
On all LED wafers 11 series connection and/or in parallel is carried out by wiring, and with this to electrode contact 101 electrically
Connection.It, need to will be provided by electronic product when light emitting device is applied to the electronic products such as various display equipment, lighting device
External power supply be electrically connected at this to circuit junction 101 can carry out using.
Referring to FIG. 4, for according to the diagrammatic cross-section of the light emitting device of the second embodiment of the utility model.Fig. 4 institute
The structure of the light emitting device shown is substantially identical as the structure of the light emitting device of first embodiment, and discrepancy is, this embodiment party
The light emitting device of formula further includes a limit photosphere 15, furthermore in the forming position of quanta point material layer 13 and protective layer 14 also
It is different.It is illustrated below only for the part of different structure, mutually isostructural part is just not repeated here.
The quanta point material layer 13 of present embodiment is only formed in the upper surface 121 of barrier layer 12.Increase the limit light of design
Layer 15 is then formed at the surface of circuit substrate 10 and the side edge surface 122 of barrier layer 12.In addition, protective layer 14 is formed in quantum
The upper outside surfaces 131 of point material layer 13 and side outer surface 132, and engaged with limit photosphere 15.In this way, present embodiment
It is that barrier layer 12 and quanta point material layer 13 are fully sealed by the connected structure design of protective layer 14 and limit photosphere 15.
The height of structure from the above, the limit photosphere 15 of present embodiment is equal to the surface of circuit substrate 10 to barrier layer
Vertical range between 12 upper surface 121.In addition, limit photosphere 15 is light non-transmittable layers, LED wafer 11 can be reflected and penetrated
Light out, and then limit the light emitting angle and range of light emitting device.In one embodiment, the material for limiting photosphere 15 includes glue
Material and barrier particulate matter, wherein barrier particulate matter accounts for the 5%~50% of overall weight percentage, and glue material can be selected for example
With silica gel or (Silicone) or epoxy resin (Epoxy), and obstruct particulate matter can be for example selected from silica (SiO2),
Any or combination of titanium dioxide (TiO2), boron nitride (BN) and zirconium dioxide (ZrO2).In addition, in other embodiments,
Limit photosphere 15 may be designed as white light non-transmittable layers.It should be noted that if limit photosphere 15 obstructs particulate matter in design and accounts for entirety
Weight percent be more than 50%, it is too high that it will cause Ratio of filler bitumen, allow limit photosphere 15 attachment degree reduce and be easy produce
Give birth to the phenomenon that falling off (Peeling).
Light emitting device made of present embodiment institute framework is that layer-by-layer storehouse is made in a manner of laminated from inside to outside,
In one embodiment, after LED wafer 11 is provided with, remaining is in barrier layer 12, quanta point material layer 13, guarantor
Sheath 14 and limit photosphere 15 laminated production method can be for example successively by encapsulating and it is cured in a manner of come direct storehouse form；Separately
It is also possible to successively to carry out direct storehouse in a manner of patch outside to form, so that the whole modularization knot that can be formed after storehouse processing procedure
Structure allows light emitting device to have lightening advantage.And it is different from the framework of first embodiment, present embodiment is to utilize barrier
Layer 12 influences quantum dot material layer 13 come the thermal energy for avoiding LED wafer 11 from generating, and utilizes protective layer 14 and limit photosphere
15 are formed by connected structure to avoid temperature, moisture and the oxygen of external environment from influencing quantum dot material layer 13.
In addition, the light that the LED wafer 11 of present embodiment is issued is compared to first embodiment (Fig. 3)
It can more concentrate, the light that LED wafer 11 is issued can be after the position for being higher than limit 15 height of photosphere just again by protecting
Go out light upper surface 141 and the light emission side side surface 142 of sheath 14 are projected outward.
It refer again to Fig. 5, for according to the diagrammatic cross-section of the light emitting device of the third embodiment of the utility model.Fig. 5
Shown in light emitting device structure it is substantially identical as the structure of the light emitting device of second embodiment, discrepancy is, this implementation
Positional relationship difference is formed by between the protective layer 14 and limit photosphere 15 of the light emitting device of mode.Below also only for different knots
The part of structure is illustrated, and rest part just repeats no more.
The limit photosphere 15 of present embodiment is formed in the side outer surface 132 of quanta point material layer 13.Opposite, protective layer
14 are formed at the upper outside surfaces 131 of quanta point material layer 13 and extend contact limit photosphere 15, make protective layer 14 and limit photosphere
15 are able to engage and barrier layer 12 and quanta point material layer 13 is fully sealed.
The height of structure from the above, the limit photosphere 15 of present embodiment is equal to the surface of circuit substrate 10 to quantum dot
Vertical range between the upper outside surfaces 131 of material layer 13.Since the height of the limit photosphere 15 of present embodiment is relatively higher than
The height of the limit photosphere 15 of second embodiment (Fig. 4), therefore the light that the LED wafer 11 of present embodiment is issued
Line will be concentrated more compared to second embodiment, and the light that LED wafer 11 is issued can be higher than limit photosphere 15
It is just projected outward by go out light upper surface 141 and the light emission side side surface 142 of protective layer 14 again after the position of height.
It refer again to Fig. 6, for according to the diagrammatic cross-section of the light emitting device of the 4th embodiment of the utility model.Fig. 6
Shown in light emitting device structure it is substantially identical as the structure of the light emitting device of second embodiment, discrepancy is, this implementation
Positional relationship difference is formed by between the protective layer 14 and limit photosphere 15 of the light emitting device of mode.Below also only for different knots
The part of structure is illustrated, and rest part just repeats no more.
The protective layer 14 of present embodiment is only formed in the upper outside surfaces 131 of covering quantum dot material layer 13.Limit photosphere
15 side outer surfaces 132 for being formed at quanta point material layer 13 and the light emission side side surface 142 of protective layer 14, so that protection
Layer 14 and limit photosphere 15 are able to engage and be used to that barrier layer 12 and quanta point material layer 13 is fully sealed.
The height of structure from the above, the limit photosphere 15 of present embodiment is equal to the surface of circuit substrate 10 to protective layer
14 vertical range gone out between light upper surface 141.Since the height of the limit photosphere 15 of present embodiment is relatively higher in third
The height of the limit photosphere 15 of embodiment (Fig. 5), therefore the light phase that the LED wafer 11 of present embodiment is issued
It will more be concentrated compared with third embodiment, the light that LED wafer 11 is issued can be higher than 15 height of limit photosphere
Position after directly by protective layer 14 go out light upper surface 141 outward project, in other words, the light emitting diode of present embodiment
The light that chip 11 is issued will be restricted to concentrate upward injection.
Will be seen that by the content of the utility model second embodiment (Fig. 4) to the 4th embodiment (Fig. 6), in order to because
The specification demands of different electronic products are answered, limit photosphere 15 may be designed as different height, to adjust the light emitting anger of light emitting device
Degree and range, preferable applicability can above be obtained by allowing apply.
In order to further illustrate the manufacturing process of the light emitting device of aforementioned each embodiment, please continue to refer to set forth below
Various manufacturing method embodiments, need to first chat bright, be illustrated below primarily directed to process step, related knot
Structure, material part just it is no longer repeated.
Referring to FIG. 7, for according to the flow chart of the manufacturing method of the light emitting device of the first embodiment of the utility model.
It, can be further and referring to the structure of light emitting device shown in Fig. 3 in order to more be expressly understood that.The manufacture of the light emitting device of present embodiment
The step of method includes: firstly, setting LED wafer 11 is in the surface (S701) of circuit substrate 10.Wherein, luminous two
Pole pipe chip 11 can be for example with SMT through the reflow oven processing procedure of high temperature come direct die bond routing in the surface of circuit substrate 10,
The temperature of its high temperature is greater than 260 DEG C.Then, the barrier layer 12 of tool heat-blocking action is formed in the surface of circuit substrate 10, and
It covers LED wafer 11 (S703), wherein barrier layer 12 is for LED wafer 11, barrier hair is fully sealed
The thermal energy that generates is to external diffusion when optical diode chip 11 operates.
After sealing LED wafer 11 using barrier layer 12, quantum dot material layer 13 is formed in barrier layer 12
Upper surface 121 (S705), and further extend to form quanta point material layer 13 in barrier from the upper surface of barrier layer 12 121
12 side edge surface 122 of layer and the surface (S707) of circuit substrate 10, allow quanta point material layer 13 that can directly contact barrier layer
12 and completely coat barrier layer 12.In one embodiment, step S705 and step S707 can be in the same step of processing procedure
It carries out.Finally, re-form protective layer 14 in the upper outside surfaces 131 and side outer surface 132 (S709) of quanta point material layer 13,
More specifically, protective layer 14 is formed at the upper outside surfaces 131 of quanta point material layer 13, and from quantum dot material layer 13
Upper outside surfaces 131 extend to form the side outer surface 132 in quanta point material layer 13 and the surface of circuit substrate 10, with complete
Seal quantum dot material layer 13.
It in one embodiment,, can after step S709 completion in order to allow light emitting device that there is preferable heat dissipation effect
Surface of the radiating module 20 in circuit substrate 10 relative to LED wafer 11 is set to reselection.
It refer again to Fig. 8, for according to the process of the manufacturing method of the light emitting device of the second embodiment of the utility model
Figure.It, can be further and referring to the structure of light emitting device shown in Fig. 4 in order to more be expressly understood that.The light emitting device of present embodiment
Step S801~S805 in manufacturing method is substantially identical as step S701~S705 in first embodiment, therefore just no longer
It repeats.
After step S805 completion, present embodiment is further formed surface and resistance of the limit photosphere 15 in circuit substrate 10
The side edge surface 122 (S807) of interlayer 12, and protective layer 14 is formed in the upper outside surfaces 131 of quanta point material layer 13 and side
Side outer surface 132 (S809) so that protective layer 14 is able to contact limit photosphere 15, and engages with limit photosphere 15 and is used to be fully sealed
Barrier layer 12 and quanta point material layer 13.In addition, being completed to allow light emitting device that there is preferable heat dissipation effect in step S809
Later, surface of the radiating module 20 in circuit substrate 10 relative to LED wafer 11 is equally set to reselection.
It refer again to Fig. 9, for according to the process of the manufacturing method of the light emitting device of the third embodiment of the utility model
Figure.In order to more be expressly understood that, can light emitting device again together referring to Figure 5 structure.The light emitting device of present embodiment
Step S901~S905 in manufacturing method is substantially identical as step S701~S705 in first embodiment, therefore just no longer
It repeats.
After step S905 completion, present embodiment is further formed the surface limited photosphere 15 in circuit substrate 10, resistance
The side edge surface 122 of interlayer 12 and the side outer surface 132 (S907) of quanta point material layer 13, and protective layer 14 is formed in amount
The upper outside surfaces 131 of son point material layer 13 simultaneously extend contact limit photosphere 15 (S909), so that protective layer 14 is able to and limit photosphere
15 engage and are used to that barrier layer 12 and quanta point material layer 13 is fully sealed.In addition, preferably being dissipated to allow light emitting device to have
Radiating module 20 is equally arranged to reselection in circuit substrate 10 relative to hair after step S909 completion in thermal effect
The surface of optical diode chip 11.
It refer again to Figure 10, for according to the process of the manufacturing method of the light emitting device of the 4th embodiment of the utility model
Figure.It, can be further and referring to the structure of light emitting device shown in fig. 6 in order to more be expressly understood that.The light emitting device of present embodiment
Step S1001~S1005 in manufacturing method is substantially identical as step S701~S705 in first embodiment, therefore just not
It repeats again.
After step S1005 completion, present embodiment is further formed protective layer 14 in the upper of quanta point material layer 13
Side external surface 131 (S1007), and formed limit photosphere 15 in the surface of circuit substrate 10, barrier layer 12 side edge surface 122,
The side outer surface 132 of quanta point material layer 13 and the light emission side side surface 142 (S1009) of protective layer 14.In this way, protect
Layer 14 is able to engage with limit photosphere 15 and for barrier layer 12 and quanta point material layer 13 is fully sealed.In addition, luminous in order to allow
Device has preferable heat dissipation effect, and after step S909 completion, radiating module 20 is equally arranged to reselection in electricity
Surface of the base board 10 relative to LED wafer 11.
It will be seen that by the example of aforementioned each manufacturing method, related barrier layer 12, quanta point material layer in embodiment
13, protective layer 14, even limit photosphere 15 all can be for example successively by encapsulating and it is cured in a manner of come direct storehouse form；In addition
It is also possible to successively to carry out direct storehouse in a manner of patch to form, so that the whole modular construction that can be formed after storehouse processing procedure.
In structure, quanta point material layer 13 effectively avoids being produced by LED wafer 11 by the barrier action of barrier layer 12
The influence of raw high temperature, and by protective layer 14 or by protective layer 14 and limit the seal protection effect of photosphere 15 and effectively keep away
From the influence of temperature, moisture and oxygen to external environment.Generally speaking, in the light emitting device with quanta point material,
Completely without the bracket or Frame Design for having any support, the light emitting device after modularization is allowed integrally to have lightening excellent
Gesture.
Although the utility model is disclosed above with numerous embodiments, so it is not intended to limit the utility model, and is appointed
What is familiar with this those skilled in the art, without departing from the spirit and scope of the utility model, when can be used for a variety of modifications and variations, therefore this
The protection scope of utility model is subject to view those as defined in claim.
Claims (13)
1. a kind of light emitting device, characterized by comprising:
One circuit substrate；
One LED wafer is set to the surface of the circuit substrate；
The barrier layer of one tool heat-blocking action, is formed in the surface of the circuit substrate and is covered in the LED wafer,
The LED wafer is fully sealed, thermal energy that the LED wafer generates is obstructed to external diffusion, wherein
The barrier layer includes a upper surface and a side surface engaged with the upper surface；
One quanta point material layer, at least formed on the upper surface of the barrier layer, directly to contact the barrier layer；And
One protective layer, at least formed on an outer surface of the part of the quanta point material layer.
2. light emitting device according to claim 1, which is characterized in that institute of the quanta point material layer from the barrier layer
The surface of the side edge surface and the circuit substrate that upper surface is extended to form in the barrier layer is stated, it is described to coat completely
Barrier layer.
3. light emitting device according to claim 2, which is characterized in that distinguish the outer surface of the quanta point material layer
The quantum dot is formed in for a upper outside surfaces and a side outer surface engaged with the upper outside surfaces, the protective layer
The upper outside surfaces of material layer, and extend to form from the upper outside surfaces of the quanta point material layer in the quantum
The side outer surface of point material layer and the surface of the circuit substrate, the quanta point material layer is fully sealed.
4. light emitting device according to claim 1, which is characterized in that further include:
One limit photosphere, is formed in the surface of the circuit substrate and the side edge surface of the barrier layer, and with the protection
Layer engages and the barrier layer and the quanta point material layer is fully sealed；
Wherein, the outer surface region of the quanta point material layer is divided into a upper outside surfaces and engages with the upper outside surfaces
A side outer surface, and the protective layer include one go out light upper surface and with it is described go out the light emission side that engages of light upper surface
Side surface.
5. light emitting device according to claim 4, which is characterized in that the protective layer is formed in the quanta point material layer
The upper outside surfaces and the side outer surface.
6. light emitting device according to claim 5, which is characterized in that the height of the limit photosphere is equal to the circuit substrate
Surface to the vertical range between the upper surface of the barrier layer.
7. light emitting device according to claim 4, which is characterized in that the limit photosphere is formed in the quanta point material layer
The side outer surface, and the protective layer be formed in the quanta point material layer the upper outside surfaces and extend connect
Touch the limit photosphere.
8. light emitting device according to claim 7, which is characterized in that the height of the limit photosphere is equal to the circuit substrate
Surface to the vertical range between the upper outside surfaces of the quanta point material layer.
9. light emitting device according to claim 4, which is characterized in that the protective layer is formed in the quanta point material layer
The upper outside surfaces, and it is described limit photosphere be formed in the quanta point material layer the side outer surface and the guarantor
The light emission side side surface of sheath.
10. light emitting device according to claim 9, which is characterized in that the height of the limit photosphere is equal to the circuit base
Go out the vertical range between light upper surface described in the surface of plate to the protective layer.
11. light emitting device according to claim 4, which is characterized in that the limit photosphere is light non-transmittable layers, to reflect
State the light of LED wafer injection.
12. light emitting device according to claim 1, which is characterized in that the upper surface or the side of the barrier layer
The vertical range of side surface to the LED wafer is at least 50 microns.
13. light emitting device according to claim 1, which is characterized in that further include:
One radiating module is set to surface of the circuit substrate relative to the LED wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820473404.6U CN208298873U (en) | 2018-03-30 | 2018-03-30 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820473404.6U CN208298873U (en) | 2018-03-30 | 2018-03-30 | Light emitting device |
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| CN208298873U true CN208298873U (en) | 2018-12-28 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323340A (en) * | 2018-03-30 | 2019-10-11 | 宝宸（厦门）光学科技有限公司 | Light emitting device and its manufacturing method |
| WO2022257129A1 (en) * | 2021-06-11 | 2022-12-15 | 江苏新云汉光电科技有限公司 | Package structure for reducing quantum dot decay, and method therefor |
-
2018
- 2018-03-30 CN CN201820473404.6U patent/CN208298873U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323340A (en) * | 2018-03-30 | 2019-10-11 | 宝宸（厦门）光学科技有限公司 | Light emitting device and its manufacturing method |
| WO2022257129A1 (en) * | 2021-06-11 | 2022-12-15 | 江苏新云汉光电科技有限公司 | Package structure for reducing quantum dot decay, and method therefor |
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Effective date of registration: 20240311 Address after: 361101 No. 996 Min'an Avenue, Torch High tech Zone (Xiang'an) Industrial Zone, Xiamen City, Fujian Province Patentee after: TPK GLASS SOLUTIONS (XIAMEN) Inc. Country or region after: China Address before: No. 190 Jimei Avenue, Jimei District, Xiamen City, Fujian Province, 361021 Patentee before: TPK Touch Systems (Xiamen) Inc. Country or region before: China |