CN208283534U - Single, double axis magnetic field sensor and electronic equipment - Google Patents
Single, double axis magnetic field sensor and electronic equipment Download PDFInfo
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- CN208283534U CN208283534U CN201820587327.7U CN201820587327U CN208283534U CN 208283534 U CN208283534 U CN 208283534U CN 201820587327 U CN201820587327 U CN 201820587327U CN 208283534 U CN208283534 U CN 208283534U
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Abstract
The utility model embodiment provides a kind of single, double axis magnetic field sensor and electronic equipment.The list magnetic field sensor includes: the first full-bridge circuit on substrate, first full-bridge circuit includes two the first, second magnetic resistance modules, two the first magnetic resistance modules are located at first full-bridge circuit a pair with respect on bridge arm, and two the second magnetic resistance modules are located at first full-bridge circuit another pair with respect on bridge arm；The reference layer direction of magnetization of first magnetic resistance module is vertical with the free layer direction of magnetization, two reference layer direction of magnetizations of the first magnetic resistance module are identical；The reference layer direction of magnetization of second magnetic resistance module is vertical with the free layer direction of magnetization, two reference layer direction of magnetizations of the second magnetic resistance module are identical；The reference layer direction of magnetization angle of the reference layer direction of magnetization of first magnetic resistance module and the second magnetic resistance module is A, 0 < A < 180 °.Technical solution provided by the utility model has the advantages that simple process, manufacturing cost are low etc., and can improve finished product rate, meets large-scale production demand.
Description
Technical field
The utility model relates to technical field of semiconductors more particularly to a kind of single, double axis magnetic field sensors and electronic equipment.
Background technique
Currently, magnetic field sensor development and application are in fields such as electronic compass.In general, each sensing shaft pair of magnetic field sensor
It should be there are two opposite pinning direction.
In the prior art, it due to being difficult to that two opposite pinning directions are prepared on a single die, generallys use more
The mode of chip splicing obtains magnetic field sensor.And multi-chip is difficult to avoid machine error in splicing, this results in finished product clever
Sensitivity is low, yield rate is low, it is difficult to meet the needs of large-scale production.
Utility model content
The utility model embodiment provides a kind of uniaxial, double-axis magnetic field sensor and electronic equipment, it is therefore intended that improves
Product sensitivity and yield rate.
In order to solve the above-mentioned technical problem, the utility model, should some embodiments provide a kind of uniaxial magnetic field sensor
Uniaxial magnetic field sensor, comprising:
Substrate；
The first full-bridge circuit on the substrate, first full-bridge circuit include two the first magnetic resistance modules and two
A second magnetic resistance module, two the first magnetic resistance modules are located on the opposite bridge arm of a pair of first full-bridge circuit,
Two the second magnetic resistance modules are located at another pair of first full-bridge circuit with respect on bridge arm；
The direction of magnetization of the reference layer of the first magnetic resistance module is vertical with the direction of magnetization of free layer, two described first
The direction of magnetization of the reference layer of magnetic resistance module is identical；
The direction of magnetization of the reference layer of the second magnetic resistance module is vertical with the direction of magnetization of free layer, two described second
The direction of magnetization of the reference layer of magnetic resistance module is identical；
The reference layer of the direction of magnetization of the reference layer of the first magnetic resistance module and adjacent the second magnetic resistance module
Direction of magnetization angle is A, 0 < A < 180 °；
The sensing shaft positive direction of the direction of magnetization of the reference layer of the first magnetic resistance module and the uniaxial magnetic field sensor
Angle and the second magnetic resistance module reference layer the direction of magnetization and the uniaxial magnetic field sensor sensing shaft positive direction
Angle it is complementary.
Optionally, the first magnetic resistance module and the second magnetic resistance module all have easy magnetizing axis；
The magnetization side of the free layer of the direction of magnetization of the free layer of the first magnetic resistance module and the second magnetic resistance module
To being respectively parallel to respective easy magnetizing axis.
Optionally, the easy magnetizing axis of the first magnetic resistance module and the angle of the easy magnetizing axis of the second magnetic resistance module are
80 °~100 °.
Optionally, the easy magnetizing axis of the first magnetic resistance module and the angle of the easy magnetizing axis of the second magnetic resistance module are
85 °~95 °.Optionally, the angle of the easy magnetizing axis of the first magnetic resistance module and the easy magnetizing axis of the second magnetic resistance module
It is 90 °.
Optionally, the direction of magnetization of the free layer of two the first magnetic resistance modules is identical；Two the second magnetic resistance moulds
The direction of magnetization of the free layer of block is identical；
The sensing shaft positive direction of the direction of magnetization of the free layer of the first magnetic resistance module and the uniaxial magnetic field sensor
Angle and the second magnetic resistance module free layer the direction of magnetization and the uniaxial magnetic field sensor sensing shaft positive direction
Angle it is complementary.
Optionally, by M, the first magnetoresistive cell is connected in series the first magnetic resistance module, the second magnetic resistance module is by N
A second magnetoresistive cell is connected in series, and wherein M, N are positive integer.
Optionally, the easy magnetizing axis of the M the first magnetoresistive cells be parallel to each other, N number of second magnetoresistive cell it is easy
Magnetized axis is parallel to each other.
Optionally, the shape of first magnetoresistive cell is identical as the shape of second magnetoresistive cell and M=N.
The other embodiment of the utility model provides a kind of double-axis magnetic field sensor, the double-axis magnetic field sensor, comprising:
Substrate；
Positioned at the first full-bridge circuit and the first half-bridge circuit over the substrate；
First full-bridge circuit includes two the first magnetic resistance modules and two the second magnetic resistance modules, two first magnetic
Resistance module is located on the opposite bridge arm of a pair of first full-bridge circuit, and two the second magnetic resistance modules are located at institute
Another pair of the first full-bridge circuit is stated with respect on bridge arm；The direction of magnetization of the reference layer of the first magnetic resistance module and free layer
The direction of magnetization is vertical, the direction of magnetization of the reference layer of two the first magnetic resistance modules is identical；The ginseng of the second magnetic resistance module
The direction of magnetization for examining layer is vertical with the direction of magnetization of free layer, the direction of magnetization phase of the reference layer of two the second magnetic resistance modules
Together；The magnetization side of the reference layer of the direction of magnetization of the reference layer of the first magnetic resistance module and adjacent the second magnetic resistance module
It is A, 0 < A < 180 ° to angle；The angle of the direction of magnetization of the reference layer of the first magnetic resistance module and the first sensing shaft positive direction
It is complementary with the angle of the direction of magnetization of the reference layer of the second magnetic resistance module and the first sensing shaft positive direction；
First half-bridge circuit includes two third magnetic resistance modules and two the first fixed resistances；Two third magnetic
Resistance module is located on the opposite bridge arm of a pair of first half-bridge circuit, and two first fixed resistances are located at institute
Another pair of the first half-bridge circuit is stated with respect on bridge arm；The direction of magnetization and freedom of the reference layer of two third magnetic resistance modules
The direction of magnetization of layer is vertical, the direction of magnetization of the reference layer of two third magnetic resistance modules is identical and is parallel to the second sensing
Axis；
Wherein, first sensing shaft and second sensing shaft are mutually perpendicular to.
Optionally, the first magnetic resistance module, the second magnetic resistance module and the third magnetic resistance module all have easily
Magnetized axis；
The direction of magnetization of the free layer of the direction of magnetization of the free layer of the first magnetic resistance module, the second magnetic resistance module
And the direction of magnetization of the free layer of the third magnetic resistance module is respectively parallel to respective easy magnetizing axis.
Optionally, the easy magnetizing axis of the first magnetic resistance module and the angle of the easy magnetizing axis of the second magnetic resistance module are
80 °~100 °.
Optionally, the easy magnetizing axis of the first magnetic resistance module and the angle of the easy magnetizing axis of the second magnetic resistance module are
85 °~95 °.
Optionally, the easy magnetizing axis of the first magnetic resistance module and the angle of the easy magnetizing axis of the second magnetic resistance module are
90°。
Optionally, the direction of magnetization of the free layer of two the first magnetic resistance modules is identical；Two the second magnetic resistance moulds
The direction of magnetization of the free layer of block is identical；
The angle of the direction of magnetization of the free layer of the first magnetic resistance module and the first sensing shaft positive direction with it is described
The angle of the direction of magnetization of the free layer of second magnetic resistance module and the first sensing shaft positive direction is complementary；
The direction of magnetization of the free layer of two third magnetic resistance modules is identical.
Optionally, by M, the first magnetoresistive cell is connected in series the first magnetic resistance module, the second magnetic resistance module is by N
A second magnetoresistive cell is connected in series, and wherein M, N are positive integer.
Optionally, the easy magnetizing axis of the M the first magnetoresistive cells be parallel to each other, N number of second magnetoresistive cell it is easy
Magnetized axis is parallel to each other.
Optionally, the shape of first magnetoresistive cell is identical as the shape of second magnetoresistive cell, and M=N.
Optionally, the third magnetic resistance module is connected in series by Q third magnetoresistive cell, and wherein Q is positive integer.
Optionally, the easy magnetizing axis of the Q third magnetoresistive cell is parallel to each other.
Optionally, the total resistance value of the Q third magnetoresistive cell is equal with the resistance value of first fixed resistance.
The other embodiment of the utility model provides a kind of electronic equipment, which includes above-mentioned uniaxial magnetic field
Sensor.
Another embodiment of the utility model provides a kind of electronic equipment, which includes that above-mentioned twin shaft magnetic field passes
Sensor.
In technical solution provided by the embodiment of the utility model, all magnetic resistance modules in magnetic field sensor are respectively positioned on same
On a substrate, it is seen then that uniaxial magnetic field sensor, double-axis magnetic field sensor in the utility model are one chip structures, are kept away
Exempted from the prior art because multi-chip splicing in machine error caused by product sensitivity is low, yield rate is low the problems such as, meet
The demand of large-scale production.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is
Some embodiments of the utility model, for those of ordinary skill in the art without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram for the uniaxial magnetic field sensor that an embodiment of the present invention provides；
Fig. 2 is the structural schematic diagram for the double-axis magnetic field sensor that an embodiment of the present invention provides；
Fig. 3 a is the structural schematic diagram for the bridge arm that an embodiment of the present invention provides；
Fig. 3 b is the another structural schematic diagram for the bridge arm that an embodiment of the present invention provides；
Fig. 4 is the flow chart of the preparation method for the uniaxial magnetic field sensor that an embodiment of the present invention provides；
Fig. 5 is the flow chart of the preparation method for the double-axis magnetic field sensor that another embodiment of the utility model provides.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
Fig. 1 shows the structural schematic diagram for the uniaxial magnetic field sensor that some embodiments of the utility model provide.Such as Fig. 1 institute
Show, which includes: substrate (not shown)；The first full-bridge circuit on the substrate, described first is complete
Bridge circuit includes two the first magnetic resistance modules 110 and two the second magnetic resistance modules 120, and two the first magnetic resistance modules 110 are divided
Wei Yu not be on the opposite bridge arm of a pair of first full-bridge circuit, two the second magnetic resistance modules 120 are located at described the
Another pair of one full-bridge circuit is with respect on bridge arm；The direction of magnetization 11A and free layer of the reference layer of the first magnetic resistance module 110
Vertical, two the first magnetic resistance modules 110 the reference layer of direction of magnetization 11B direction of magnetization 11A it is identical；Second magnetic
Hinder the reference layer of module 120 direction of magnetization 12A is vertical with the direction of magnetization 12B of free layer, two the second magnetic resistance modules
The direction of magnetization 12A of 120 reference layer is identical；The direction of magnetization 11A of the reference layer of the first magnetic resistance module 110 and adjacent
The direction of magnetization 12A angle of the reference layer of the second magnetic resistance module 120 is A, 0 < A < 180 °；The first magnetic resistance module 110
Reference layer direction of magnetization 11A and the uniaxial magnetic field sensor 100 positive direction of sensing shaft angle and second magnetic
The angle for hindering the direction of magnetization 12A of the reference layer of module 120 and 100 positive direction of sensing shaft of the uniaxial magnetic field sensor is mutual
It mends.
In technical solution provided by the embodiment of the utility model, all magnetic resistance modules in magnetic field sensor are respectively positioned on same
It on a substrate, and is completed based on a membrane stack dish material technology and simple post growth annealing, it is seen then that in the utility model
Uniaxial magnetic field sensor is one chip structure, is avoided in the prior art because multiple membrane stack deposits, complicated annealing process, with
And product sensitivity caused by the machine error in multi-chip splicing is low, uniformity, poor repeatability leads to problems such as yield rate low,
It can satisfy the demand of large-scale production.
When it is implemented, shape anisotropy can be used to realize the free layer of the first magnetic resistance module, the second magnetic resistance module
The direction of magnetization biasing.In a kind of achievable scheme, the first magnetic resistance module 110 and the second magnetic resistance module
120 all have easy magnetizing axis；The direction of magnetization of the free layer of the first magnetic resistance module 110 and the second magnetic resistance module 120
The direction of magnetization of free layer be respectively parallel to respective easy magnetizing axis.That is the first magnetic resistance module 110 and the second magnetic resistance module 120
All have the shape for making the direction of magnetization of respective free layer be parallel to its easy magnetizing axis.In general, as shown in Figure 1, the first magnetic resistance mould
Block 110 and the long axis of the second magnetic resistance module 120 are respective easy magnetizing axis, therefore, can be by the first magnetic resistance module 110 and second
Magnetic resistance module 120 is designed to oblong, makes in the case where no external magnetic field so that shape anisotropy is sufficiently strong, freely
The direction of magnetization of layer is along long axis direction.Such as: the shape of the first magnetic resistance module 110 and the second magnetic resistance module 120 includes but not
It is limited to rectangle, Long Hexagon or ellipse.
The working principle of uniaxial magnetic field sensor will be simply introduced for the bridge structure shown in Fig. 1 below: when outer
Magnetic direction along uniaxial magnetic field sensor 100 positive direction of sensing shaft (arrow direction) when, 110 He of the first magnetic resistance module
The direction of magnetization of the free layer of second magnetic resistance module 120 can deflect to outer magnetic field direction, finally along outer magnetic field direction,
That is the angle meeting of the direction of magnetization 11B of the direction of magnetization 11A and free layer of the reference layer of two the first magnetic resistance modules 110
Become smaller (less than 90 ° when starting), i.e., the resistance of two the first magnetic resistance modules can become smaller, and the ginseng of the second magnetic resistance module 120
The angle for examining the direction of magnetization 12A of the layer and direction of magnetization 12B of free layer can become larger (greater than 90 ° when starting), i.e. the second magnetic
The resistance of resistance module can become larger.In this way, according to the output valve V of electric bridgeoutIt can determine that current outer magnetic field direction and intensity.
Supplementary explanation, to survey external magnetic field, resistance variations of magnetic field sensor under the action of external magnetic field, on two groups of opposite bridge arms
It needs on the contrary, the resistance value on i.e. one opposite bridge arm becomes smaller, the resistance value on another opposite bridge arm becomes larger.
Due to the easy magnetizing axis and the second magnetic resistance module of the first magnetic resistance module easy magnetizing axis angle closer to 90 °,
The output valve of one full-bridge circuit is bigger, and transducer sensitivity is higher, therefore, in the specific implementation, the easy magnetic of the first magnetic resistance module
The angle for changing the easy magnetizing axis of axis and the second magnetic resistance module is 80 °~100 °.Further, the easy magnetizing axis of the first magnetic resistance module
Angle with the easy magnetizing axis of the second magnetic resistance module is 85 °~95 °.In a kind of achievable scheme, the first magnetic resistance module
The angle of easy magnetizing axis and the easy magnetizing axis of the second magnetic resistance module is 90 °, at this moment, when there is externally-applied magnetic field, the first magnetic resistance module
Equal with the absolute value of resistance change of the second magnetic resistance module, at this moment, output value of electric bridge is maximum, transducer sensitivity highest.
In a specific structure, as shown in Figure 1, the direction of magnetization 11B of the free layer of two the first magnetic resistance modules 110
It is identical；The direction of magnetization 12B of the free layer of two the second magnetic resistance modules 120 is identical；The first magnetic resistance module 110 from
By the angle and the second magnetic resistance mould of 100 positive direction of sensing shaft of the direction of magnetization 11B and uniaxial magnetic field sensor of layer
The angle of 100 positive direction of sensing shaft of the direction of magnetization 12B of the free layer of block 120 and the uniaxial magnetic field sensor is complementary.
Above-mentioned first magnetic resistance module may include first magnetoresistive cell or concatenated multiple first magnetoresistive cells, described
Two magnetic resistance modules may include second magnetoresistive cell or concatenated multiple second magnetoresistive cells.Such as: the first magnetic resistance mould
Block by M the first magnetoresistive cells 101 be connected in series (as best shown in figures 3 a and 3b), the second magnetic resistance module is by N number of second magnetic resistance
Unit is connected in series, and wherein M, N are positive integer.The numerical value of M and N can be designed according to the actual situation, and the present embodiment is to this
It is not especially limited.The quantity of magnetoresistive cell on each bridge arm is more, and the noise of electric bridge will correspondingly reduce, this is because often
The irrelevant random behavior of one magnetoresistive cell is averaged out.
In a kind of achievable scheme, the easy magnetizing axis of the M the first magnetoresistive cells is parallel to each other, described N number of the
The easy magnetizing axis of two magnetoresistive cells is parallel to each other.It that is to say, the easy magnetizing axis of the first magnetoresistive cell is the easy of the first magnetic resistance module
Magnetized axis, the easy magnetizing axis of the second magnetoresistive cell are the easy magnetizing axis of the second magnetic resistance module.It can ensure that so each in measurement
The magnetization side of the free layer of equal, each second magnetoresistive cell of the deflection angle of the direction of magnetization of the free layer of first magnetoresistive cell
To deflection angle it is equal, reduce subsequent the difficulty of outer magnetic field direction and intensity is calculated according to output result.
Further, the shape of first magnetoresistive cell is identical as the shape of second magnetoresistive cell and M=N.This
Sample can ensure that each bridge arm resistance value in no externally-applied magnetic field is identical, improve measurement accuracy.
Specifically, the first above-mentioned magnetic resistance module can be giant magnetoresistance or tunnel magneto structure；Second magnetic resistance module can be huge
Magnetic resistance or tunnel magneto structure.In addition, the reference layer of the first magnetic resistance module can be synthetic anti-ferromagnetic (synthetic
Antiferromagnetic, SAF) structure or be Spin Valve (Spinvalve, SV) structure；The reference layer of second magnetic resistance module can
Think synthetic anti-ferromagnetic (synthetic antiferromagnetic, SAF) structure or is tied for Spin Valve (Spinvalve, SV)
Structure.
It should be noted that CIP (in current parallel face, current-in-plane) or CPP can be used in giant magnetoresistance structures
(in electric current vertical plane, current-perpendicular-to-plane) mode works；Tunnel magneto structure uses CPP method
Work.
Another embodiment of the utility model provides a kind of electronic equipment, which includes in the various embodiments described above
Uniaxial magnetic field sensor.The electronic equipment includes but is not limited to mobile phone, smartwatch, MP4, wears display equipment, game paddle
Deng.
Fig. 2 is the structural schematic diagram for the double-axis magnetic field sensor that some embodiments of the utility model provide.As shown in Fig. 2,
The double-axis magnetic field sensor includes: substrate；Positioned at the first full-bridge circuit and the first half-bridge circuit over the substrate；Described
One full-bridge circuit includes two the first magnetic resistance modules 110 and two the second magnetic resistance modules 120, two the first magnetic resistance modules
110 are located on the opposite bridge arm of a pair of first full-bridge circuit, and two the second magnetic resistance modules 120 are located at institute
Another pair of the first full-bridge circuit is stated with respect on bridge arm；The direction of magnetization and freedom of the reference layer of the first magnetic resistance module 110
The direction of magnetization of layer is vertical, the direction of magnetization of the reference layer of two the first magnetic resistance modules 110 is identical；The second magnetic resistance mould
The direction of magnetization of the reference layer of the block 120 and direction of magnetization of free layer is vertical, reference layer of two the second magnetic resistance modules 120
The direction of magnetization it is identical；The direction of magnetization of the reference layer of the first magnetic resistance module 110 and adjacent the second magnetic resistance module
The direction of magnetization angle of 120 reference layer is A, 0 < A < 180 °；The direction of magnetization of the reference layer of the first magnetic resistance module 110 and
The direction of magnetization and described first of the angle of first sensing shaft, 200 positive direction and the reference layer of the second magnetic resistance module 120 passes
The angle for feeling 200 positive direction of axis is complementary；First half-bridge circuit includes two third magnetic resistance modules 310 and two first fixations
Resistance R1；Two third magnetic resistance modules 310 are located on the opposite bridge arm of a pair of first half-bridge circuit, two institutes
It states the first fixed resistance R1 and is located at another pair of first half-bridge circuit with respect on bridge arm；Two third magnetic resistance moulds
The direction of magnetization of the reference layer of the block 310 and direction of magnetization of free layer is vertical, reference layer of two third magnetic resistance modules 310
The direction of magnetization it is identical and be parallel to the second sensing shaft 300；Wherein, first sensing shaft 200 and second sensing shaft 300
It is mutually perpendicular to.
In technical solution provided by the embodiment of the utility model, all magnetic resistance modules in magnetic field sensor are respectively positioned on same
On a substrate, and completed based on a membrane stack material technology and simple post growth annealing.As it can be seen that in the utility model
Double-axis magnetic field sensor is one chip structure, is avoided in the prior art because of multiple membrane stack depositing operation and complicated annealing
Product sensitivity is low, uniformity caused by machine error in technique and multi-chip splicing, and poor repeatability causes yield rate low
The problems such as, it can satisfy the demand of large-scale production.
When it is implemented, shape anisotropy can be used to realize the first magnetic resistance module 110,120 and of the second magnetic resistance module
The biasing of the direction of magnetization of the free layer of third magnetic resistance mould 310.In a kind of achievable scheme, the first magnetic resistance module
110, the second magnetic resistance module 120 and the third magnetic resistance module 310 all have easy magnetizing axis；The first magnetic resistance module
The direction of magnetization of the free layer of the direction of magnetization of 110 free layer, the second magnetic resistance module 120 and the third magnetic resistance mould
The direction of magnetization of the free layer of block 310 is respectively parallel to respective easy magnetizing axis.That is the first magnetic resistance module 110 and the second magnetic resistance mould
Block 120, the third magnetic resistance module 310 all have the shape for making the direction of magnetization of respective free layer be parallel to respective easy magnetizing axis
Shape.In general, as shown in Fig. 2, the long axis of the first magnetic resistance module 110 and the second magnetic resistance module 120, third magnetic resistance module 310 is
Therefore respective easy magnetizing axis can design the first magnetic resistance module 110 and the second magnetic resistance module 120, third magnetic resistance module 310
At oblong, make in the case where no external magnetic field so that shape anisotropy is sufficiently strong, the direction of magnetization edge of free layer
Long axis direction.Such as: the shape of the first magnetic resistance module 110 and the second magnetic resistance module 120, third magnetic resistance module 310 include but
It is not limited to rectangle, Long Hexagon or ellipse.
The working principle of double-axis magnetic field sensor will be simply introduced by taking double-shaft sensor shown in Fig. 2 as an example below: when
When outer magnetic field direction is along 200 positive direction of first axle, the magnetization of the free layer of the third magnetic resistance module 310 in the first half-bridge circuit
Direction does not deflect, and therefore, the first half-bridge circuit is insensitive to the magnetic field in the first sensing axis direction；In first full-bridge circuit
The direction of magnetization of the free layer of first magnetic resistance module 110 and the second magnetic resistance module 120 can deflect to outer magnetic field direction, finally
Along outer magnetic field direction, that is to say, that the direction of magnetization 11A of the reference layer of two the first magnetic resistance modules 110 and the magnetic of free layer
The angle for changing direction 11B can become smaller (less than 90 ° when starting), i.e., the resistance of two the first magnetic resistance modules can become smaller, and two
The angle of the direction of magnetization 12B of the direction of magnetization 12A and free layer of the reference layer of a second magnetic resistance module 120, which can become larger, (to be greater than
90 ° when beginning), i.e., the resistance of two the second magnetic resistance modules can become larger, and at this moment, the first full-bridge circuit has output valve Vout1,
And the first half-bridge circuit is without output valve (i.e. Vout2For 0).Since the first half-bridge circuit is without output valve, outer magnetic field direction can determine whether out
Along the first sensing shaft, further according to the output valve V of the first full-bridge circuitout1It can determine that current external magnetic field along the first sensing
Axis positive direction and magnetic field strength.When outer magnetic field direction is along the second axis positive direction, in each bridge arm on the first full-bridge circuit
The angle of the direction of magnetization of the direction of magnetization and free layer of reference layer is becoming smaller, and variable quantity is equal, therefore, the first full-bridge electricity
Road is without output, it is seen then that the first full-bridge circuit is insensitive to the magnetic field in the second axis direction, and external magnetic field is along the second axis；Second
The angle of the direction of magnetization of the direction of magnetization and free layer of the reference layer of two third magnetic resistance modules is becoming larger in half-bridge circuit,
First fixed resistance resistance value is constant, therefore the second half-bridge circuit has output valve, can be true according to the output valve of the second half-bridge circuit
Make the specific magnetic direction and magnetic field strength of external magnetic field.Due to the magnetic field on any one direction, intersection all can decompose
In first sensing shaft and the second sensing shaft, the magnetic-field component in the first sensing shaft, the first half-bridge are measured by the first full-bridge circuit
Magnetic-field component in the second sensing shaft of circuit measuring by two component sizes and positive and negative can determine that magnetic direction and magnetic field
Intensity.
Due to the easy magnetizing axis and the second magnetic resistance module of the first magnetic resistance module easy magnetizing axis angle closer to 90 °,
The output valve of one full-bridge circuit is bigger, and transducer sensitivity is higher, therefore, in the specific implementation, the easy magnetic of the first magnetic resistance module
The angle for changing the easy magnetizing axis of axis and the second magnetic resistance module is 80 °~100 °.Further, the easy magnetizing axis of the first magnetic resistance module
Angle with the easy magnetizing axis of the second magnetic resistance module is 85 °~95 °.In a kind of achievable scheme, the first magnetic resistance module
The angle of easy magnetizing axis and the easy magnetizing axis of the second magnetic resistance module is 90 °, at this moment, when there is externally-applied magnetic field, the first magnetic resistance module
Equal with the absolute value of resistance change of the second magnetic resistance module, at this moment, output value of electric bridge is maximum, transducer sensitivity highest.
In a specific structure, as shown in Fig. 2, the direction of magnetization 11B of the free layer of two the first magnetic resistance modules 110
It is identical；The direction of magnetization 12B of the free layer of two the second magnetic resistance modules 120 is identical；The first magnetic resistance module 110 from
By the free layer of the direction of magnetization 11B of layer and the angle of 200 positive direction of the first sensing shaft and the second magnetic resistance module 120
200 positive direction of direction of magnetization 12B and the first sensing shaft angle it is complementary.The free layer of two third magnetic resistance modules 120
The direction of magnetization it is identical.
Further, above-mentioned first magnetic resistance module can by first magnetoresistive cell or multiple first magnetoresistive cells series connection and
At the second magnetic resistance module can be connected in series by second magnetoresistive cell or multiple second magnetoresistive cells, above-mentioned third magnetic
Resistance module can be connected in series by a third magnetoresistive cell or multiple third magnetoresistive cells.
Such as: by M, the first magnetoresistive cell is connected in series the first magnetic resistance module, the second magnetic resistance module is by N number of
Second magnetoresistive cell is connected in series, and wherein M, N are positive integer.The numerical value of M and N can be designed according to the actual situation, and real
It applies example and this is not especially limited.The quantity of magnetoresistive cell on each bridge arm is more, and the noise of full-bridge electric bridge will correspondingly drop
It is low, this is because the irrelevant random behavior of each magnetoresistive cell is averaged out.
In a kind of achievable scheme, the easy magnetizing axis of the M the first magnetoresistive cells is parallel to each other, described N number of the
The easy magnetizing axis of two magnetoresistive cells is parallel to each other.It that is to say, the easy magnetizing axis of the first magnetoresistive cell is the easy of the first magnetic resistance module
Magnetized axis, the easy magnetizing axis of the second magnetoresistive cell are the easy magnetizing axis of the second magnetic resistance module.It can ensure that so each in measurement
The magnetization side of the free layer of equal, each second magnetoresistive cell of the deflection angle of the direction of magnetization of the free layer of first magnetoresistive cell
To deflection angle it is equal, reduce subsequent the difficulty of outer magnetic field direction and intensity is calculated according to output result.
Further, the shape of first magnetoresistive cell is identical as the shape of second magnetoresistive cell and M=N.This
Sample can ensure that each bridge arm resistance value in no externally-applied magnetic field is identical, improve measurement accuracy.
In a specific structure, the third magnetic resistance module is connected in series by Q third magnetoresistive cell, and wherein Q is positive
Integer.Quantity on half-bridge circuit with respect to the magnetoresistive cell on bridge arm is more, and the noise of half-bridge will correspondingly reduce, this be because
It is averaged out for the irrelevant random behavior of each magnetoresistive cell.
Further, the easy magnetizing axis of the Q third magnetoresistive cell is parallel to each other.It can ensure that so each in measurement
The deflection angle of the direction of magnetization of the free layer of third magnetoresistive cell is equal, with reduce according to output valve determine outer magnetic field direction and
The difficulty of intensity.
In order to improve the measurement accuracy of the first half-bridge circuit, total resistance value and the institute of the Q third magnetoresistive cell can be made
The resistance value for stating the first fixed resistance is equal, in this way, the resistance on each bridge arm is equal in no external magnetic field.
Specifically, above-mentioned the first magnetic resistance module can be giant magnetoresistance or tunnel magneto structure；Second magnetic resistance module can
For giant magnetoresistance or tunnel magneto structure；Third magnetic resistance module can be giant magnetoresistance or tunnel magneto structure.In addition, the first magnetic resistance module
Reference layer can be synthetic anti-ferromagnetic (synthetic antiferromagnetic, SAF) structure or be Spin Valve
(Spinvalve, SV) structure；The reference layer of second magnetic resistance module can be synthetic anti-ferromagnetic (synthetic
Antiferromagnetic, SAF) structure or be Spin Valve (Spinvalve, SV) structure；The reference layer of third magnetic resistance module can
Think synthetic anti-ferromagnetic (synthetic antiferromagnetic, SAF) structure or is tied for Spin Valve (Spinvalve, SV)
Structure.
It should be noted that CIP (in current parallel face, current-in-plane) or CPP can be used in giant magnetoresistance structures
(in electric current vertical plane, current-perpendicular-to-plane) mode works；Tunnel magneto structure uses CPP method
Work.
The other embodiment of the utility model provides a kind of electronic equipment, which includes above-mentioned twin shaft magnetic field
Sensor.The electronic equipment includes but is not limited to mobile phone, smartwatch, MP4, wears display equipment, game paddle etc..
You need to add is that single, double axis magnetic field sensor using one chip structure can effectively avoid in the prior art because
The problem of fracture of connecting wire caused by multi-chip is spliced, to improve the stability and service life of magnetic field sensor.?
In practical application, the first magnetic resistance module, the second magnetic resistance module and/or third magnetic resistance module in the various embodiments described above may include by
Under to seed layer, Antiferromagnetic pinning layer, reference layer, non-magnetic interbed, free layer and the coating above stacked gradually.Seed layer are as follows:
The Ta stacked gradually from bottom to topAnd NiFeCr；Antiferromagnetic pinning layer are as follows: IrMn；Reference layer
Are as follows: CoFeOr the CoFe stacked gradually from bottom to top、Ru、CoFe；Non-magnetic interbed
Are as follows: Cu；Free layer are as follows: CoFe；Coating are as follows: the NiFe stacked gradually from bottom to top、Ta。
It should be noted that reference layer is the CoFe stacked gradually from bottom to top、Ru、CoFe, i.e. reference layer is SAF structure.
It should be added that the first full-bridge circuit in the various embodiments described above is full Gordon Adams Bridge circuit；It is above-mentioned each
The first half-bridge circuit in embodiment is half Gordon Adams Bridge circuit.
The other embodiment of the utility model provides a kind of preparation method of uniaxial magnetic field sensor.As shown in figure 4, should
Method includes:
1101, several layer films are sequentially depositing, on substrate to obtain stack layer.
1102, etching is patterned to the stack layer and forms two the first stacked blocks and two the second stacked blocks；Its
In, two first stacked blocks are oppositely arranged, two second stacked blocks are oppositely arranged and the first stacked blocks and the second heap
Folded block is disposed adjacent.
1103, conducting wire is prepared over the substrate, and the conducting wire connects first stacked blocks and second stacked blocks
Constitute the first full bridge structure.
1104, heated in the first magnetic field, and cooled down after removing first magnetic field with by described first
Stacked blocks are converted to the first magnetic resistance module, second stacked blocks are converted to the second magnetic resistance module, by the first full-bridge knot
Structure is converted to the first full-bridge circuit.
Wherein, two the first magnetic resistance modules are located on the opposite bridge arm of a pair of first full-bridge circuit, and two
A second magnetic resistance module is located at another pair of first full-bridge circuit with respect on bridge arm；The first magnetic resistance module
Reference layer the direction of magnetization is vertical with the direction of magnetization of free layer, magnetization side of the reference layer of two the first magnetic resistance modules
To identical；The direction of magnetization of the reference layer of the second magnetic resistance module is vertical with the direction of magnetization of free layer, two described second
The direction of magnetization of the reference layer of magnetic resistance module is identical；The direction of magnetization of the reference layer of the first magnetic resistance module with it is adjacent described
The direction of magnetization angle of the reference layer of second magnetic resistance module is A, 0 < A < 180 °；The magnetization of the reference layer of the first magnetic resistance module
The magnetization of the reference layer of the angle and the second magnetic resistance module of the sensing shaft positive direction of direction and the uniaxial magnetic field sensor
The angle of the sensing shaft positive direction of direction and the uniaxial magnetic field sensor is complementary.
In above-mentioned steps 1101, magnetron sputtering, atomic layer deposition, pulse laser deposition, molecular beam epitaxy or electricity can be used
The modes such as beamlet vapor deposition prepare each layer film on substrate, to obtain stack layer.Under normal conditions, stack layer may include being arrived by down
On the seed layer, Antiferromagnetic pinning layer, the magnetic reference layer, non-magnetic interbed, free magnetic layer, coating that stack gradually.Wherein, respectively
The specific structure and specific material of layer can be designed according to actual needs, and the utility model is not specifically limited this.It is existing
Have in order to enhance pinning effect in technology, magnetic reference layer can be improved to synthetic anti-ferromagnetic structure (synthetic
Antiferromagnet, SAF), synthetic anti-ferromagnetic structure includes between the first ferromagnetic reference stacked gradually from bottom to top, SAF
Layer and the second ferromagnetic reference, SAF interbed can be Ru, Cr, Mo layers etc..
In a kind of achievable scheme, seed layer can are as follows: the Ta stacked gradually from bottom to topAnd NiFeCr；Antiferromagnetic pinning layer are as follows: IrMn；Reference layer are as follows: CoFe Or stack gradually from bottom to top
CoFe、Ru、CoFe；Non-magnetic interbed are as follows: Cu；Free layer are as follows: CoFe；Coating are as follows: the NiFe stacked gradually from bottom to top、Ta.It should be noted that when referring to
Layer is the CoFe stacked gradually from bottom to top、Ru、CoFeWhen, which is SAF structure.
In above-mentioned steps 1102, the shape of the first magnetic resistance module and the second magnetic resistance module can be designed according to actual needs
Shape, the present embodiment are not specifically limited this.
Sense coupling (inductively coupled plasma, ICP) can be used, reactive ion is carved
Erosion (reactive-ion etching, RIE) or ion beam milling (Ion milling) technique performs etching to be had membrane stack layer
There are two the first magnetic resistance modules and two the second magnetic resistance modules of preset shape.
In above-mentioned steps 1103, conducting wire can be prepared by techniques such as hot evaporation, magnetron sputterings.When it is implemented, can thing
First prepare include wire pattern mask plate, by the mask plate, use hot evaporation or magnetron sputtering deposited metal material with
Prepare conducting wire.Two the first magnetic resistance modules are connected by conducting wire in full-bridge type with two the second magnetic resistance modules.
In above-mentioned steps 1104, is first heated in the first magnetic field, after heat treatment, remove the first magnetic field
Afterwards, it is cooled down to obtain finished product.After heating in the first magnetic field, the reference of the first magnetic resistance module and the second magnetic resistance module
The direction of magnetization of layer each along the first magnetic field magnetic direction, after removing magnetic field, since current environment is also under higher temperature,
First magnetic resistance module and the second magnetic resistance module will appear demagnetization effects, so that the reference of the first magnetic resistance module and the second magnetic resistance module
The direction of magnetization of layer deflects, and after cooling, the magnetization side of the reference layer of the first magnetic resistance module and the second magnetic resistance module
To pinned, and the direction of magnetization of the reference layer of final first magnetic resistance module and the second magnetic resistance module and respective free layer magnetize
Direction is vertical.
As it can be seen that can disposably complete two different pinnings directions using preparation method provided in this embodiment.This is practical new
Type can be completed the full Gordon Adams Bridge in uniaxial magnetic field by simple a few step photoetching and graphical etching and externally-applied magnetic field after annealing and pass
The preparation of sensor, and is passing through multiple membrane stack material technology, complicated graphical etching and magnetic anneal work in the prior art
Uniaxial magnetic field sensor can just be obtained after skill to compare, technical solution provided by the utility model not only avoids complicated technology multicore
Machine error when piece splices, reduces finished product otherness, also has simple process, manufacturing cost low, and meets extensive raw
The advantages that demand of production.
When it is implemented, can be heated 1-10 hours in the first magnetic field；After removing magnetic field, directly it can cool down or be further continued for add
It is 0-3 hours hot.In addition, the magnetic field strength in the first magnetic field is the bigger the better, but magnetic field strength is bigger, the requirement to Preparation equipment
It is just higher.Therefore, if the magnetic field strength in first magnetic field be greater than in the stack layer Antiferromagnetic pinning layer and reference layer it
Between spin-exchange-coupled field intensity can be realized reference layer the direction of magnetization biasing.In general, the model of the magnetic field strength in the first magnetic field
It encloses for [0.3T, 2T], it is preferable that in the range of [0.6T, 1T].
After removing the first magnetic field, due to the demagnetizing field or/and composite reference layer antiferromagnetic interacting field of reference layer
Under effect, so that the reference layer direction of magnetization is deflected towards short-axis direction.To which reference layer is pinned at after annealing is cooled to room temperature
It is biased to short axle/hard axis direction.In addition, before cooling, heating a period of time can be continued after removing the first magnetic field, so that
The direction of magnetization of reference layer deflects.Such as: it is described to be heated in the first magnetic field, and removing first magnetic
It is cooling after, comprising: firstly, being heated 2-5 hours in the first magnetic field, wherein the magnetic direction in first magnetic field is parallel to institute
It states the surface of substrate and is greater than perpendicular to sensing shaft, the magnetic field strength in first magnetic field of the uniaxial magnetic field sensor described
Spin-exchange-coupled field intensity in stack layer between Antiferromagnetic pinning layer and reference layer；Then, first magnetic field is removed, continues to add
It is 0-1.5 hours hot；Finally, being cooled to room temperature.Specifically, first magnetic field is removed, heating 0.75-1.5 hours is continued.In order to
It prevents after removing the first magnetic field, due to the deflecting force of the direction of magnetization of the reference layer of the first magnetic resistance module, the second magnetic resistance module
It is insufficient, it is difficult to deflect into the direction vertical with the direction of magnetization of its free layer, can be added and the first magnetic after removing the first magnetic field
The second opposite magnetic field of the magnetic direction of field, to provide deflecting force, the magnetic field strength in the second magnetic field is less than anti-in the stack layer
Spin-exchange-coupled field intensity between ferromagnetic pinning layer and reference layer.In a kind of achievable scheme, first magnetic field is removed,
Continue heating 0-1.5 hours, comprising: after removing first magnetic field, add the second magnetic field to continue in second magnetic field
Heating 0-1.5 hours；Then, second magnetic field is removed；Wherein, the magnetic direction in second magnetic field and first magnetic field
Magnetic direction on the contrary, and second magnetic field magnetic field strength be less than in the stack layer Antiferromagnetic pinning layer and reference layer it
Between spin-exchange-coupled field intensity.Since the magnetic field strength in the second magnetic field is lower than Antiferromagnetic pinning layer and reference layer in the stack layer
Between spin-exchange-coupled field intensity, the time heated in the second magnetic field also shorter than the heating time in the first magnetic field, therefore,
One, the direction of magnetization of the reference layer of the second magnetic resistance module will not deflect to the second magnetic direction, and can at most deflect into perpendicular to
The respective free layer direction of magnetization.Specifically, after removing first magnetic field, the second magnetic field is added to relay in second magnetic field
Continuous heating 0.75-1.5 hours.
It is greater than 0.3T generally, due to the spin-exchange-coupled field intensity in stack layer between Antiferromagnetic pinning layer and reference layer, because
This, can be set as [0.0T, 0.3T] for the range of the magnetic field strength in the second magnetic field.In a kind of achievable scheme, described second
The range of the magnetic field strength in magnetic field is [0.01T, 0.3T].
It should be noted that the friendship when reference layer is SAF structure, in stack layer between Antiferromagnetic pinning layer and reference layer
Changing coupling field intensity can enhance, and combine instead at this point, the spin-exchange-coupled field intensity between Antiferromagnetic pinning layer and reference layer is referred to as
Ferromagnetic structure couples field intensity.
Annealing temperature can be arranged according to antiferromagnetic blocking temperature (Blocking temperature) T of stack layer, tool
Body, annealing region is [T-50 DEG C, T+50 DEG C].
Further, in graphical etching process, can by the first stacked blocks and the second stacked blocks design forming shape respectively to
The opposite sex, so that the first magnetic resistance module and the second magnetic resistance module all have easy magnetizing axis.The freedom of the first magnetic resistance module
The direction of magnetization of the free layer of the direction of magnetization and the second magnetic resistance module of layer is respectively parallel to respective easy magnetizing axis.I.e.
One magnetic resistance module and the second magnetic resistance module have long axis and short axle, long axis, that is, easy magnetizing axis, short axle, that is, hard axis, long axis and short axle phase
It is mutually vertical.
Semi-finished product are prepared in 1101, step 1102 and step 1103 through the above steps: described in the conducting wire connects
First stacked blocks and second stacked blocks constitute the first full bridge structure；Two the first stack layers are located at the one of the first full bridge structure
On opposite bridge arm, two the second stacked blocks are located on another opposite bridge arm of the first full bridge structure.Heat treatment is in the first magnetic
It is carried out in, the magnetic direction in the first magnetic field (note: is passed preparing uniaxial magnetic field perpendicular to the sensing shaft of uniaxial magnetic field sensor
Before sensor, a direction can be provided in advance, designed so that this direction is sensing axis direction, in this way, finally obtained single shaft
The sensing shaft of magnetic field sensor that is to say along this direction), after heating after a period of time, two the first magnetic resistance modules
The magnetic direction in the first magnetic field is referred both to the direction of magnetization of the reference layer of two the second magnetic resistance modules, later, removes the first magnetic field,
During continuous heating or in cooling incipient stage, the first magnetic resistance module and the second magnetic resistance mould in no magnetic field or the second magnetic field
The direction of magnetization of the reference layer of block can deflect towards respective short-axis direction, be finally fixed on short-axis direction and (refer to
To short-axis direction).It deflects during continuous heating and in the cooling incipient stage in no magnetic field or the second magnetic field and is
It is generated due to demagnetization effects.I.e. after removing the first magnetic field, since demagnetization effects make magnetic resistance module generate a demagnetization
Field (that is: fringing field), the magnetic line of force come out from magnetic resistance module and are formed flux loop, this magnetic circuit line loop is partial to walk most short
Route (state that shortest path corresponds to minimum energy), therefore, flux loop gradually deflects to short-axis direction, finally
So that the direction of magnetization of reference layer is fixed on short-axis direction.Finally obtained above-mentioned finished product.
In the present embodiment, the specific structure of finally obtained single shaft magnetic field sensor can be found in above-mentioned related embodiment,
This is repeated no more.
In a kind of achievable scheme, during magnetic-field annealing, the magnetic field strength in the first magnetic field is 0.3-2 tesla.
Specifically, the magnetic field strength in first magnetic field is 0.6-1 tesla.
In addition, annealing temperature is 200-300 DEG C during magnetic-field annealing.Specifically, annealing temperature is 230-270 DEG C.
Above-mentioned substrate can be insulating substrate or semiconductor substrate, and when for semiconductor substrate, above-mentioned preparation method is also wrapped
It includes: is sequentially depositing before each layer film of magnetoresistive cell on substrate, form a layer insulating in semiconductor substrate surface.Example
Such as: substrate is silicon substrate, carries out thermal oxidation to surface of silicon and forms insulating layer of silicon oxide.And then by magnetoresistive cell
Each layer film deposition on the insulating layer.
The other embodiment of the utility model provides a kind of preparation method of double-axis magnetic field sensor.As shown in figure 5, should
Method includes:
2101, several layer films are sequentially depositing, on substrate to obtain stack layer；
2102, etching is patterned to the stack layer and forms two the first stacked blocks, two the second stacked blocks and two
A third stacked blocks；Wherein, two first stacked blocks are oppositely arranged, two second stacked blocks are oppositely arranged and institute
It states the first stacked blocks to be disposed adjacent with second stacked blocks, two third stacked blocks are oppositely arranged；
2103, two the first fixed resistances and conducting wire are prepared over the substrate, and two first fixed resistances are opposite
It is arranged and first fixed resistance is disposed adjacent with the third stacked blocks；The conducting wire connect first stacked blocks and
Second stacked blocks constitute the first full bridge structure；The conducting wire connects the third stacked blocks and the first fixed resistance structure
At the first half-bridge structure；
2104, heated in the first magnetic field, and cooled down after removing first magnetic field with by described first
Stacked blocks are converted to the first magnetic resistance module, second stacked blocks are converted to the second magnetic resistance module, by the first full-bridge knot
Structure is converted to the first full-bridge circuit, third stacked blocks are converted to third magnetic resistance module, are converted to first half-bridge structure
First half-bridge circuit.
Wherein, two the first magnetic resistance modules are located on the opposite bridge arm of a pair of first full-bridge circuit, and two
A second magnetic resistance module is located at another pair of first full-bridge circuit with respect on bridge arm；The first magnetic resistance module
Reference layer the direction of magnetization is vertical with the direction of magnetization of free layer, magnetization side of the reference layer of two the first magnetic resistance modules
To identical；The direction of magnetization of the reference layer of the second magnetic resistance module is vertical with the direction of magnetization of free layer, two described second
The direction of magnetization of the reference layer of magnetic resistance module is identical；The direction of magnetization of the reference layer of the first magnetic resistance module with it is adjacent described
The direction of magnetization angle of the reference layer of second magnetic resistance module is A, 0 < A < 180 °；The magnetization of the reference layer of the first magnetic resistance module
The direction of magnetization and described first of the angle of direction and the first sensing shaft positive direction and the reference layer of the second magnetic resistance module passes
The angle for feeling axis positive direction is complementary；Two third magnetic resistance modules are located at the opposite bridge of a pair of first half-bridge circuit
On arm, two first fixed resistances are located at another pair of first half-bridge circuit with respect on bridge arm；Described in two
The direction of magnetization of the reference layer of third magnetic resistance module is vertical with the direction of magnetization of free layer, the ginseng of two third magnetic resistance modules
The direction of magnetization for examining layer is identical and be parallel to the second sensing shaft；Wherein, first sensing shaft and second sensing shaft are mutual
Vertically.
In above-mentioned steps 2101, magnetron sputtering, atomic layer deposition, pulse laser deposition, molecular beam epitaxy or electricity can be used
The modes such as beamlet vapor deposition prepare each layer film on substrate, to obtain stack layer.Under normal conditions, stack layer may include being arrived by down
On the seed layer, Antiferromagnetic pinning layer, the magnetic reference layer, non-magnetic interbed, free magnetic layer that stack gradually.Wherein, the tool of each layer
Body structure and specific material can be designed according to actual needs, and the utility model is not specifically limited this.The prior art
In in order to enhance pinning effect, magnetic reference layer can be improved to synthetic anti-ferromagnetic structure (synthetic
Antiferromagnet, SAF), synthetic anti-ferromagnetic structure includes the first ferromagnetic reference stacked gradually, SAF interbed and
Two ferromagnetic references.SAF interbed can be Ru, Cr, Mo layers etc..
In a kind of achievable scheme, seed layer can are as follows: the Ta stacked gradually from bottom to topAnd NiFeCr；Antiferromagnetic pinning layer are as follows: IrMn；Reference layer are as follows: CoFe Or stack gradually from bottom to top
CoFe、Ru、CoFe；Non-magnetic interbed are as follows: Cu；Free layer are as follows: CoFe；Coating are as follows: the NiFe stacked gradually from bottom to top、Ta.It should be noted that when referring to
Layer is the CoFe stacked gradually from bottom to top、Ru、CoFeWhen, which is SAF structure.
In above-mentioned steps 2102, the first magnetic resistance module and the second magnetic resistance module, third can be designed according to actual needs
The shape of magnetic resistance module, the present embodiment are not specifically limited this.
Sense coupling (inductively coupled plasma, ICP) can be used, reactive ion is carved
Erosion (reactive-ion etching, RIE) or ion beam milling (Ion milling) technique performs etching to be had membrane stack layer
There are two the first magnetic resistance modules and two the second magnetic resistance modules, two third magnetic resistance modules of preset shape.
In above-mentioned steps 2103, two the first fixed resistances and conducting wire can be prepared by hot evaporation, magnetron sputtering.Tool
When body is implemented, can prepare in advance includes that the mask plate of wire pattern and the first fixed resistance pattern is adopted by the mask plate
With hot evaporation or magnetron sputtering deposited metal material to prepare two the first fixed resistances and conducting wire.
In above-mentioned steps 2104, is first heated in the first magnetic field, after heat treatment, remove the first magnetic field
Afterwards, it is cooled down to obtain finished product.After heating in the first magnetic field, the first magnetic resistance module and the second magnetic resistance module, third
The direction of magnetization of the reference layer of magnetic resistance module each along the first magnetic field magnetic direction, after removing magnetic field, due to the first magnetic resistance mould
The demagnetization effects of block and the second magnetic resistance module, so that the direction of magnetization of the reference layer of the first magnetic resistance module and the second magnetic resistance module is sent out
Raw deflection, and after cooling, obtain above-mentioned finished product.
As it can be seen that using preparation method provided in this embodiment, can on single stack layer using simple etching technics and
Double-axis magnetic field sensor, and three different pinnings directions of disposable completion can be made in annealing process simultaneously.The utility model passes through
The preparation of double-axis magnetic field sensor can be completed in simple graph etching and magnetic anneal, in the prior art pass through multiple film
After the magnetoresistive cell that heap deposition and complex figure etching and magnetic anneal obtain, it is also necessary to which carrying out chip splicing can just obtain
Double-axis magnetic field sensor is compared, and technical solution provided by the utility model not only avoids machine error when multi-chip splicing,
Finished product otherness is reduced, also has many advantages, such as that simple process, manufacturing cost are low, meets the needs of large-scale production.
When it is implemented, can be heated 1-10 hours in the first magnetic field；After removing magnetic field, directly it can cool down or be further continued for add
It is 0-3 hours hot.In addition, the magnetic field strength in the first magnetic field is the bigger the better, but magnetic field strength is bigger, the requirement to Preparation equipment
It is just higher.Therefore, if the magnetic field strength in first magnetic field be greater than in the stack layer Antiferromagnetic pinning layer and reference layer it
Between spin-exchange-coupled field intensity can be realized reference layer the direction of magnetization biasing.In general, the model of the magnetic field strength in the first magnetic field
It encloses for [0.3T, 2T], it is preferable that in the range of [0.6T, 1T].
After removing the first magnetic field, since the direction of magnetization of the reference layer of the first magnetic resistance module and the second magnetic resistance module is being removed
After removing externally-applied magnetic field, under the action of the demagnetizing field or/and the antiferromagnetic interacting field of composite reference layer of reference layer, so that ginseng
Layer direction of magnetization is examined to deflect towards short-axis direction.To which reference layer is pinned at deviation short axle/hard axis after annealing is cooled to room temperature
Direction.In addition, after removing the first magnetic field before cooling, heating a period of time can be continued, so that the magnetization of reference layer
Direction deflects.Such as: described to be heated in the first magnetic field and cooling after removing first magnetic field, packet
It includes: firstly, being heated 2-5 hours in the first magnetic field, wherein the magnetic direction in first magnetic field is parallel to the table of the substrate
Face and perpendicular to the first sensing shaft, the magnetic field strength in first magnetic field be greater than the stack layer in Antiferromagnetic pinning layer and reference
Spin-exchange-coupled field intensity between layer；Then, first magnetic field is removed, heating 0-1.5 hours is continued；Finally, being cooled to room
Temperature.Specifically, first magnetic field is removed, heating 0.75-1.5 hours is continued.
In order to prevent after removing the first magnetic field, due to the magnetization of the reference layer of the first magnetic resistance module, the second magnetic resistance module
The deflecting force in direction is insufficient, it is difficult to deflect into the direction vertical with the direction of magnetization of respective free layer, can remove the first magnetic field
Afterwards, second magnetic field opposite with the magnetic direction in the first magnetic field is added, to increase deflecting force, the magnetic field strength in the second magnetic field is less than
Spin-exchange-coupled field intensity in the stack layer between Antiferromagnetic pinning layer and reference layer.In a kind of achievable scheme, remove
First magnetic field is gone to, heating 0-1.5 hours is continued, comprising: after removing first magnetic field, adds the second magnetic field described
Continue heating 0-1.5 hours in second magnetic field；Then, second magnetic field is removed；Wherein, the magnetic direction in second magnetic field
With the magnetic direction in first magnetic field on the contrary, and the magnetic field strength in second magnetic field be less than antiferromagnetic nail in the stack layer
Prick the spin-exchange-coupled field intensity between layer and reference layer.Since the magnetic field strength in the second magnetic field is antiferromagnetic lower than in the stack layer
Spin-exchange-coupled field intensity between pinning layer and reference layer, and the time heated in the second magnetic field is also shorter than in the first magnetic field
Heating time, therefore, the direction of magnetization of the reference layer of the first, second magnetic resistance module will not deflect to the second magnetic direction.Specifically
Ground after removing first magnetic field, adds the second magnetic field to continue heating 0.75-1.5 hours in second magnetic field.
It is greater than 0.3T generally, due to the spin-exchange-coupled field intensity in stack layer between Antiferromagnetic pinning layer and reference layer, because
This, can be set as [0.0T, 0.3T] for the range of the magnetic field strength in the second magnetic field.In a kind of achievable scheme, described second
The range of the magnetic field strength in magnetic field is [0.01T, 0.3T].
It should be noted that the friendship when reference layer is SAF structure, in stack layer between Antiferromagnetic pinning layer and reference layer
Changing coupling field intensity can enhance, and combine instead at this point, the spin-exchange-coupled field intensity between Antiferromagnetic pinning layer and reference layer is referred to as
Ferromagnetic structure couples field intensity.
Annealing temperature can be arranged according to antiferromagnetic blocking temperature (Blocking temperature) T of stack layer, tool
Body, annealing region is [T-50 DEG C, T+50 DEG C].
Further, in graphical etching process, the first stacked blocks and the second stacked blocks, third stacked blocks can be designed
Forming shape anisotropy, so that the first magnetic resistance module and the second magnetic resistance module, third magnetic resistance module all have easy magnetizing axis.
The direction of magnetization of the free layer of the first magnetic resistance module, the second magnetic resistance module and third magnetic resistance module is respectively parallel to respectively
From easy magnetizing axis.That is the first magnetic resistance module and the second magnetic resistance module, third magnetic resistance module have long axis and short axle, long axis, that is, easy
Magnetized axis, long axis are mutually perpendicular to short axle.
Semi-finished product are prepared in 2101, step 2102 and step 2103 through the above steps: described in the conducting wire connects
First stacked blocks and second stacked blocks constitute the first full bridge structure；Two the first stack layers are located at the one of the first full bridge structure
On opposite bridge arm, two the second stacked blocks are located on another opposite bridge arm of the first full bridge structure；Two third stacked blocks are located at
On the opposite bridge arm of the one of first half-bridge structure；Heat treatment is carried out in the first magnetic field, and the magnetic direction in the first magnetic field hangs down
Directly in the first sensing shaft, (note: before preparing double-axis magnetic field sensor, can provide a direction in advance, with this direction for the
One senses axis direction to design, in this way, the first sensing shaft of finally obtained double-axis magnetic field sensor that is to say along this side
To), after heating after a period of time, the magnetization side of the reference layer of two the first magnetic resistance modules and two the second magnetic resistance modules
The magnetic direction for being directed to the first magnetic field to the direction of magnetization of the reference layer of, two third magnetic resistance modules removes the first magnetic later
, in no magnetic field or the second magnetic field during continuous heating, or in cooling incipient stage, the first magnetic resistance module and the second magnetic
The direction of magnetization for hindering the reference layer of module can deflect towards respective short-axis direction, be finally fixed on short-axis direction
(i.e. direction short-axis direction).Deflecting during continuous heating and in the incipient stage of no magnetic-field cooling is due to demagnetization
What effect generated.I.e. after removing the first magnetic field, since demagnetization effects make magnetic resistance module generate a demagnetizing field (i.e.: more
End of a performance), the magnetic line of force comes out from magnetic resistance module and is formed flux loop, this magnetic circuit line loop is partial to walk minimal path (most
Short path corresponds to the state of minimum energy), therefore, flux loop is gradually to short-axis direction (perpendicular to the side of easy magnetizing axis
To) deflect, it is fixed on the direction of magnetization of reference layer on short-axis direction.It should be noted that removing first
After magnetic field, as shown in Fig. 2, due to third magnetic resistance module reference layer the direction of magnetization along short-axis direction, third
The direction of magnetization of the reference layer of magnetic resistance module is during subsequent continuous heating and the incipient stage of subsequent cooling will not occur
Deflection.
In the present embodiment, the specific structure of finally obtained double-axis magnetic field sensor can be found in above-mentioned related embodiment,
This is repeated no more.
In a kind of achievable scheme, during magnetic-field annealing, the magnetic field strength in the first magnetic field is 0.3-2 tesla.
Specifically, the magnetic field strength in first magnetic field is 0.6-1 tesla.
In addition, annealing temperature is 200-300 DEG C during magnetic-field annealing.Specifically, annealing temperature is 230-270 DEG C.
Above-mentioned substrate can be insulating substrate or semiconductor substrate, and when for semiconductor substrate, above-mentioned preparation method is also wrapped
It includes: is sequentially depositing before each layer film of magnetoresistive cell on substrate, form a layer insulating in semiconductor substrate surface.Example
Such as: substrate is silicon substrate, carries out thermal oxidation to surface of silicon and forms insulating layer of silicon oxide.And then by magnetoresistive cell
Each layer film deposition on the insulating layer.
It should be added that uniaxially or biaxially magnetic field sensor and CMOS are simultaneous for one chip provided by the utility model
Capacitive is strong, can be directly in ASIC (Application Specific Integrated Circuits, specific integrated circuit) electricity
Road is prepared, that is, is easy to realize Top-down design with ASIC；One chip structure splices encapsulating structure, knot compared to multi-chip
Structure is simple, and chip area is smaller, meets current miniaturization of electronic products design requirement；Single, double axis provided by the utility model
Magnetic field sensor detection method is direct, and algorithm is simple.In addition, uniaxially or biaxially sensor, cost is made by single stack layer
It is low；Since structure is simple and preparation process is simple, can be easy to according to different application, to design the sensitivity and survey of sensor
Measure range.
Finally, it should be noted that above embodiments are only to illustrate the technical solution of the utility model, rather than its limitations；
Although the utility model is illustrated with reference to the foregoing embodiments, those skilled in the art should understand that: it is still
It is possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is equally replaced
It changes；And these are modified or replaceed, various embodiments of the utility model technical solution that it does not separate the essence of the corresponding technical solution
Spirit and scope.
A1, a kind of uniaxial magnetic field sensor, comprising:
Substrate；
The first full-bridge circuit on the substrate, first full-bridge circuit include two the first magnetic resistance modules and two
A second magnetic resistance module, two the first magnetic resistance modules are located on the opposite bridge arm of a pair of first full-bridge circuit,
Two the second magnetic resistance modules are located at another pair of first full-bridge circuit with respect on bridge arm；
The direction of magnetization of the reference layer of the first magnetic resistance module is vertical with the direction of magnetization of free layer, two described first
The direction of magnetization of the reference layer of magnetic resistance module is identical；
The direction of magnetization of the reference layer of the second magnetic resistance module is vertical with the direction of magnetization of free layer, two described second
The direction of magnetization of the reference layer of magnetic resistance module is identical；
The reference layer of the direction of magnetization of the reference layer of the first magnetic resistance module and adjacent the second magnetic resistance module
Direction of magnetization angle is A, 0 < A < 180 °；
The sensing shaft positive direction of the direction of magnetization of the reference layer of the first magnetic resistance module and the uniaxial magnetic field sensor
Angle and the second magnetic resistance module reference layer the direction of magnetization and the uniaxial magnetic field sensor sensing shaft positive direction
Angle it is complementary.
A2, uniaxial magnetic field sensor according to a1, the first magnetic resistance module and the second magnetic resistance module have
There is easy magnetizing axis；
The magnetization side of the free layer of the direction of magnetization of the free layer of the first magnetic resistance module and the second magnetic resistance module
To being respectively parallel to respective easy magnetizing axis.
A3, the uniaxial magnetic field sensor according to A2, which is characterized in that the easy magnetizing axis of the first magnetic resistance module with
The angle of the easy magnetizing axis of the second magnetic resistance module is 80 °~100 °.
A4, the uniaxial magnetic field sensor according to A2, the easy magnetizing axis of the first magnetic resistance module and second magnetic
The angle for hindering the easy magnetizing axis of module is 85 °~95 °.
A5, the uniaxial magnetic field sensor according to A2, the easy magnetizing axis of the first magnetic resistance module and second magnetic
The angle for hindering the easy magnetizing axis of module is 90 °.
A6, the uniaxial magnetic field sensor according to any one of A1-A5, the free layer of two the first magnetic resistance modules
The direction of magnetization it is identical；The direction of magnetization of the free layer of two the second magnetic resistance modules is identical；
The sensing shaft positive direction of the direction of magnetization of the free layer of the first magnetic resistance module and the uniaxial magnetic field sensor
Angle and the second magnetic resistance module free layer the direction of magnetization and the uniaxial magnetic field sensor sensing shaft positive direction
Angle it is complementary.
A7, the uniaxial magnetic field sensor according to any one of A2-A5, the first magnetic resistance module is by M the first magnetic
Unit is connected in series, the second magnetic resistance module is connected in series by N number of second magnetoresistive cell for resistance, and wherein M, N are positive integer.
A8, the uniaxial magnetic quantity sensor according to A7,
The easy magnetizing axis of the M the first magnetoresistive cells is parallel to each other, the easy magnetizing axis phase of N number of second magnetoresistive cell
It is mutually parallel.
A9, the uniaxial magnetic quantity sensor according to A7,
The shape of first magnetoresistive cell is identical as the shape of second magnetoresistive cell and M=N.
B10, a kind of double-axis magnetic field sensor, comprising:
Substrate；
Positioned at the first full-bridge circuit and the first half-bridge circuit over the substrate；
First full-bridge circuit includes two the first magnetic resistance modules and two the second magnetic resistance modules, two first magnetic
Resistance module is located on the opposite bridge arm of a pair of first full-bridge circuit, and two the second magnetic resistance modules are located at institute
Another pair of the first full-bridge circuit is stated with respect on bridge arm；The direction of magnetization of the reference layer of the first magnetic resistance module and free layer
The direction of magnetization is vertical, the direction of magnetization of the reference layer of two the first magnetic resistance modules is identical；The ginseng of the second magnetic resistance module
The direction of magnetization for examining layer is vertical with the direction of magnetization of free layer, the direction of magnetization phase of the reference layer of two the second magnetic resistance modules
Together；The magnetization side of the reference layer of the direction of magnetization of the reference layer of the first magnetic resistance module and adjacent the second magnetic resistance module
It is A, 0 < A < 180 ° to angle；The angle of the direction of magnetization of the reference layer of the first magnetic resistance module and the first sensing shaft positive direction
It is complementary with the angle of the direction of magnetization of the reference layer of the second magnetic resistance module and the first sensing shaft positive direction；
First half-bridge circuit includes two third magnetic resistance modules and two the first fixed resistances；Two third magnetic
Resistance module is located on the opposite bridge arm of a pair of first half-bridge circuit, and two first fixed resistances are located at institute
Another pair of the first half-bridge circuit is stated with respect on bridge arm；The direction of magnetization and freedom of the reference layer of two third magnetic resistance modules
The direction of magnetization of layer is vertical, the direction of magnetization of the reference layer of two third magnetic resistance modules is identical and is parallel to the second sensing
Axis；
Wherein, first sensing shaft and second sensing shaft are mutually perpendicular to.
B11, double-axis magnetic field sensor according to b10,
The first magnetic resistance module, the second magnetic resistance module and the third magnetic resistance module all have easy magnetizing axis；
The direction of magnetization of the free layer of the direction of magnetization of the free layer of the first magnetic resistance module, the second magnetic resistance module
And the direction of magnetization of the free layer of the third magnetic resistance module is respectively parallel to respective easy magnetizing axis.
B12, the double-axis magnetic field sensor according to B11, the easy magnetizing axis of the first magnetic resistance module and described second
The angle of the easy magnetizing axis of magnetic resistance module is 80 °~100 °.
B13, the double-axis magnetic field sensor according to B11, the easy magnetizing axis of the first magnetic resistance module and described second
The angle of the easy magnetizing axis of magnetic resistance module is 85 °~95 °.
B14, the double-axis magnetic field sensor according to B11, which is characterized in that the easy magnetizing axis of the first magnetic resistance module
Angle with the easy magnetizing axis of the second magnetic resistance module is 90 °.
B15, the double-axis magnetic field sensor according to any one of B10-B14,
The direction of magnetization of the free layer of two the first magnetic resistance modules is identical；The freedom of two the second magnetic resistance modules
The direction of magnetization of layer is identical；
The angle of the direction of magnetization of the free layer of the first magnetic resistance module and the first sensing shaft positive direction with it is described
The angle of the direction of magnetization of the free layer of second magnetic resistance module and the first sensing shaft positive direction is complementary；
The direction of magnetization of the free layer of two third magnetic resistance modules is identical.
B16, the double-axis magnetic field sensor according to any one of B10-B14, the first magnetic resistance module is by M first
Magnetoresistive cell is connected in series, the second magnetic resistance module is connected in series by N number of second magnetoresistive cell, and wherein M, N are positive integer.
B17, the double-axis magnetic field sensor according to B16, the easy magnetizing axis of the M the first magnetoresistive cells are mutually flat
The easy magnetizing axis of capable, described N number of second magnetoresistive cell is parallel to each other.
B18, the double-axis magnetic field sensor according to B17, the shape of first magnetoresistive cell and second magnetic resistance
The shape of unit is identical, and M=N.
B19, the double-axis magnetic field sensor according to any one of B10-B14, the third magnetic resistance module is by Q third
Magnetoresistive cell is connected in series, and wherein Q is positive integer.
B20, the double-axis magnetic field sensor according to B19, the easy magnetizing axis of the Q third magnetoresistive cell are mutually flat
Row.
B21, the double-axis magnetic field sensor according to B20, the total resistance value of the Q third magnetoresistive cell and described the
The resistance value of one fixed resistance is equal.
E49, a kind of electronic equipment, including uniaxial magnetic field sensor described in any one of A1-A9.
F50, a kind of electronic equipment, including double-axis magnetic field sensor described in any one of B10-B21.
Claims (23)
1. a kind of single shaft magnetic field sensor characterized by comprising
Substrate；
The first full-bridge circuit on the substrate, first full-bridge circuit include two the first magnetic resistance modules and two the
Two magnetic resistance modules, two the first magnetic resistance modules are located on the opposite bridge arm of a pair of first full-bridge circuit, and two
The second magnetic resistance module is located at another pair of first full-bridge circuit with respect on bridge arm；
The direction of magnetization of the reference layer of the first magnetic resistance module is vertical with the direction of magnetization of free layer, two first magnetic resistance
The direction of magnetization of the reference layer of module is identical；
The direction of magnetization of the reference layer of the second magnetic resistance module is vertical with the direction of magnetization of free layer, two second magnetic resistance
The direction of magnetization of the reference layer of module is identical；
The magnetization of the reference layer of the direction of magnetization of the reference layer of the first magnetic resistance module and adjacent the second magnetic resistance module
Angular separation is A, 0 < A < 180 °；
The folder of the direction of magnetization of the reference layer of the first magnetic resistance module and the sensing shaft positive direction of the uniaxial magnetic field sensor
The folder of the direction of magnetization of the reference layer of angle and the second magnetic resistance module and the sensing shaft positive direction of the uniaxial magnetic field sensor
Angle is complementary.
2. single shaft magnetic field sensor according to claim 1, which is characterized in that the first magnetic resistance module and described second
Magnetic resistance module all has easy magnetizing axis；
The direction of magnetization of the free layer of the direction of magnetization of the free layer of the first magnetic resistance module and the second magnetic resistance module point
It is not parallel to respective easy magnetizing axis.
3. single shaft magnetic field sensor according to claim 2, which is characterized in that the easy magnetizing axis of the first magnetic resistance module
Angle with the easy magnetizing axis of the second magnetic resistance module is 80 °~100 °.
4. single shaft magnetic field sensor according to claim 2, which is characterized in that the easy magnetizing axis of the first magnetic resistance module
Angle with the easy magnetizing axis of the second magnetic resistance module is 85 °~95 °.
5. single shaft magnetic field sensor according to claim 2, which is characterized in that the easy magnetizing axis of the first magnetic resistance module
Angle with the easy magnetizing axis of the second magnetic resistance module is 90 °.
6. single shaft magnetic field sensor according to any one of claims 1-5, which is characterized in that two first magnetic resistance
The direction of magnetization of the free layer of module is identical；The direction of magnetization of the free layer of two the second magnetic resistance modules is identical；
The folder of the direction of magnetization of the free layer of the first magnetic resistance module and the sensing shaft positive direction of the uniaxial magnetic field sensor
The folder of the direction of magnetization of the free layer of angle and the second magnetic resistance module and the sensing shaft positive direction of the uniaxial magnetic field sensor
Angle is complementary.
7. the uniaxial magnetic field sensor according to any one of claim 2-5, which is characterized in that the first magnetic resistance module
Be connected in series by M the first magnetoresistive cells, the second magnetic resistance module is connected in series by N number of second magnetoresistive cell, wherein M, N are equal
For positive integer.
8. single shaft magnetic field sensor according to claim 7, which is characterized in that
The easy magnetizing axis of the M the first magnetoresistive cells is parallel to each other, the easy magnetizing axis of N number of second magnetoresistive cell is mutually flat
Row.
9. single shaft magnetic field sensor according to claim 7, which is characterized in that
The shape of first magnetoresistive cell is identical as the shape of second magnetoresistive cell and M=N.
10. a kind of double-axis magnetic field sensor characterized by comprising
Substrate；
Positioned at the first full-bridge circuit and the first half-bridge circuit over the substrate；
First full-bridge circuit includes two the first magnetic resistance modules and two the second magnetic resistance modules, two the first magnetic resistance moulds
Block is located on the opposite bridge arm of a pair of first full-bridge circuit, and two the second magnetic resistance modules are located at described the
Another pair of one full-bridge circuit is with respect on bridge arm；The direction of magnetization of the reference layer of the first magnetic resistance module and the magnetization of free layer
Direction is vertical, the direction of magnetization of the reference layer of two the first magnetic resistance modules is identical；The reference layer of the second magnetic resistance module
The direction of magnetization is vertical with the direction of magnetization of free layer, the direction of magnetization of reference layer of two the second magnetic resistance modules is identical；
The direction of magnetization of the reference layer of the direction of magnetization of the reference layer of the first magnetic resistance module and adjacent the second magnetic resistance module
Angle is A, 0 < A < 180 °；The angle of the direction of magnetization of the reference layer of the first magnetic resistance module and the first sensing shaft positive direction with
The angle of the direction of magnetization of the reference layer of the second magnetic resistance module and the first sensing shaft positive direction is complementary；
First half-bridge circuit includes two third magnetic resistance modules and two the first fixed resistances；Two third magnetic resistance moulds
Block is located on the opposite bridge arm of a pair of first half-bridge circuit, and two first fixed resistances are located at described the
Another pair of one half-bridge circuit is with respect on bridge arm；The direction of magnetization of the reference layer of two third magnetic resistance modules and free layer
The direction of magnetization is vertical, the direction of magnetization of the reference layer of two third magnetic resistance modules is identical and is parallel to the second sensing shaft；
Wherein, first sensing shaft and second sensing shaft are mutually perpendicular to.
11. double-axis magnetic field sensor according to claim 10, which is characterized in that
The first magnetic resistance module, the second magnetic resistance module and the third magnetic resistance module all have easy magnetizing axis；
The direction of magnetization of the free layer of the direction of magnetization of the free layer of the first magnetic resistance module, the second magnetic resistance module and
The direction of magnetization of the free layer of the third magnetic resistance module is respectively parallel to respective easy magnetizing axis.
12. double-axis magnetic field sensor according to claim 11, which is characterized in that the easy magnetization of the first magnetic resistance module
The angle of axis and the easy magnetizing axis of the second magnetic resistance module is 80 °~100 °.
13. double-axis magnetic field sensor according to claim 11, which is characterized in that the easy magnetization of the first magnetic resistance module
The angle of axis and the easy magnetizing axis of the second magnetic resistance module is 85 °~95 °.
14. double-axis magnetic field sensor according to claim 11, which is characterized in that the easy magnetization of the first magnetic resistance module
The angle of axis and the easy magnetizing axis of the second magnetic resistance module is 90 °.
15. double-axis magnetic field sensor described in any one of 0-14 according to claim 1, which is characterized in that
The direction of magnetization of the free layer of two the first magnetic resistance modules is identical；The free layer of two the second magnetic resistance modules
The direction of magnetization is identical；
The angle of the direction of magnetization of the free layer of the first magnetic resistance module and the first sensing shaft positive direction and described second
The angle of the direction of magnetization of the free layer of magnetic resistance module and the first sensing shaft positive direction is complementary；
The direction of magnetization of the free layer of two third magnetic resistance modules is identical.
16. double-axis magnetic field sensor described in any one of 0-14 according to claim 1, which is characterized in that first magnetic resistance
Module is connected in series by M the first magnetoresistive cells, the second magnetic resistance module is connected in series by N number of second magnetoresistive cell, wherein
M, N is positive integer.
17. double-axis magnetic field sensor according to claim 16, which is characterized in that the M the first magnetoresistive cell it is easy
Magnetized axis is parallel to each other, the easy magnetizing axis of N number of second magnetoresistive cell is parallel to each other.
18. double-axis magnetic field sensor according to claim 17, which is characterized in that the shape of first magnetoresistive cell with
The shape of second magnetoresistive cell is identical, and M=N.
19. double-axis magnetic field sensor described in any one of 0-14 according to claim 1, which is characterized in that the third magnetic resistance
Module is connected in series by Q third magnetoresistive cell, and wherein Q is positive integer.
20. double-axis magnetic field sensor according to claim 19, which is characterized in that the Q third magnetoresistive cell it is easy
Magnetized axis is parallel to each other.
21. double-axis magnetic field sensor according to claim 20, which is characterized in that the Q third magnetoresistive cell it is total
Resistance value is equal with the resistance value of first fixed resistance.
22. a kind of electronic equipment, which is characterized in that including uniaxial magnetic field sensor of any of claims 1-9.
23. a kind of electronic equipment, which is characterized in that including double-axis magnetic field sensor described in any one of claim 10-21.
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| CN201820587327.7U CN208283534U (en) | 2018-04-23 | 2018-04-23 | Single, double axis magnetic field sensor and electronic equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108387852A (en) * | 2018-04-23 | 2018-08-10 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method thereof |
| CN113167847A (en) * | 2019-08-27 | 2021-07-23 | 西部数据技术公司 | Magnetic sensor array with dual TMR film |
-
2018
- 2018-04-23 CN CN201820587327.7U patent/CN208283534U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108387852A (en) * | 2018-04-23 | 2018-08-10 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method thereof |
| CN108387852B (en) * | 2018-04-23 | 2024-07-19 | 北京航空航天大学青岛研究院 | Single-shaft and double-shaft magnetic field sensor and preparation method thereof |
| CN113167847A (en) * | 2019-08-27 | 2021-07-23 | 西部数据技术公司 | Magnetic sensor array with dual TMR film |
| CN113167847B (en) * | 2019-08-27 | 2024-05-24 | 西部数据技术公司 | Magnetic sensor array with dual TMR films |
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