CN208272626U - A kind of direct current protection circuit against input over-voltage - Google Patents
A kind of direct current protection circuit against input over-voltage Download PDFInfo
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- CN208272626U CN208272626U CN201820853399.1U CN201820853399U CN208272626U CN 208272626 U CN208272626 U CN 208272626U CN 201820853399 U CN201820853399 U CN 201820853399U CN 208272626 U CN208272626 U CN 208272626U
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Abstract
The utility model is related to circuit field, a kind of direct current protection circuit against input over-voltage, including high pressure resistant MOS device, biasing circuit and boostrap circuit；The biasing circuit is connected between the grid and source electrode of high pressure resistant MOS device Q1, and the boostrap circuit is connected between the grid and ground terminal of high pressure resistant MOS device.The drain electrode of the high pressure resistant MOS device is for accessing power supply voltage, source electrode for connecting the feeder ear of low-voltage circuit.The boostrap circuit obtains bias current by biasing circuit and raises the grid potential of high pressure resistant MOS device, so that the source electrode output of the high pressure resistant MOS device is suitable for the supply voltage of the low-voltage circuit operating voltage range.The utility model has the advantages that working when input over-voltage, interval opens and closes circuit when normal voltage；Failure self recovery when over-voltage；Protect circuit-line loss low；It is few using number of devices, it is at low cost convenient for integrated application.
Description
Technical field
The utility model is related to circuit field, especially a kind of direct current protection circuit against input over-voltage.
Background technique
Circuit is protected used in currently on the market: 1, for converting electricity using secondary power supply or battery powered DC/DC
For road, there are also other power supply units, such as relay, motor, ptc heater inductive load for its input side；Therefore it inputs
Voltage haves the characteristics that scope range of the fluctuation of voltage is big；Secondly, other power supply units have throw load spy when opening and stopping working
Property, input voltage can be improved at this time to several times of voltage rating of value；2, according to the context request, need one kind in existing application
Inhibit the solution of the voltage under the conditions of parameter constant；Conventional protection method is to increase TVS diode+insurance in front end
Silk consumes energy by clamps when over-voltage, the insurance for the front that fuses when energy continues.3, due to insurance be can not be extensive
Multiple, therefore maintainability is poor for product.
New content
In order to solve the above technical problems, the utility model provides a kind of adjustable measuring tool for improving mini model.
The utility model provide technical solution be: a kind of direct current protection circuit against input over-voltage, including high pressure resistant MOS device, partially
Circuits and boostrap circuit；Wherein the high pressure resistant MOS device is Q1, including drain electrode, grid and source level；The biasing circuit packet
Include resistance R1, capacitor C1, resistance R2 and diode D1；The biasing circuit is connected to grid and the source of high pressure resistant MOS device Q1
Between pole, the boostrap circuit includes resistance R3 and diode D2；The boostrap circuit is connected to the grid of high pressure resistant MOS device
Between capacitor C1.
In the technical solution advanced optimized, the drain electrode of the high pressure resistant MOS device for access power supply voltage,
Source electrode is used to connect the feeder ear of low-voltage circuit.
In the technical solution advanced optimized, the boostrap circuit obtains bias current for resistance to height by biasing circuit
The grid potential of pressure MOS device is raised, so that the source electrode output of the high pressure resistant MOS device is suitable for low-voltage circuit work electricity
Press the supply voltage of range.
In the technical solution advanced optimized, the power supply electric current, which comes out, divides two-way, flows to high pressure resistant MOS all the way
The drain electrode of device；The resistance R1 of biasing circuit is flowed to all the way；The electric current come out from resistance R1 divides two-way, flows to capacitor C1 all the way,
Then it is come out from C1 and flows to ground terminal；Another way flows to resistance R2；Electric current flows to the grid of high pressure resistant MOS device from mono- road resistance R2
Pole；Another way flows to diode D1；Electric current comes out from diode D1 and flows to feeder ear.
After above-mentioned technical proposal, the beneficial effect of the utility model is:
Relative to disclosed technical solution, the utility model innovative point is, 1, using clamper protection philosophy, when inputting over-voltage
It works, interval opens and closes circuit when normal voltage；2, failure self recovery when over-voltage；3, protection circuit-line loss
It is low；4, few using number of devices, it is at low cost convenient for integrated application；
Detailed description of the invention
Fig. 1 is a kind of direct current protection circuit against input over-voltage figure
Specific embodiment
With reference to the accompanying drawing 1 and specific embodiment the utility model is described in detail, but not as the limit to the utility model
It is fixed.
As shown in Fig. 1, a kind of direct current protection circuit against input over-voltage, including high pressure resistant MOS device, biasing circuit and bootstrapping
Circuit；Wherein the high pressure resistant MOS device is Q1, including drain electrode, grid and source level；The biasing circuit includes resistance R1, electricity
Hold C1, resistance R2 and diode D1；The biasing circuit is connected between the grid and source electrode of high pressure resistant MOS device Q1, described
Boostrap circuit includes resistance R3 and diode D2；The power supply electric current, which comes out, divides two-way, flows to high pressure resistant MOS device all the way
Drain electrode；The resistance R1 of biasing circuit is flowed to all the way；The electric current come out from resistance R1 divides two-way, flows to capacitor C1 all the way, then
It is come out from C1 and flows to ground terminal；Another way flows to resistance R2；Electric current flows to the grid of high pressure resistant MOS device from mono- road resistance R2；
Another way flows to diode D1；Electric current comes out from diode D1 and flows to feeder ear.
As shown in Figure 1, embodiment: the biasing circuit is connected between the grid and source electrode of high pressure resistant MOS device, institute
It states boostrap circuit to be connected between the grid and ground terminal of high pressure resistant MOS device Q1, the drain electrode of the high pressure resistant MOS device is used for
Access power supply voltage, source electrode are used to connect the feeder ear of low-voltage circuit, and the boostrap circuit is obtained inclined by biasing circuit
It sets electric current and raises the grid potential of high pressure resistant MOS device, so that the source electrode output of the high pressure resistant MOS device is suitable for described
The supply voltage of low-voltage circuit operating voltage range.
As known by the technical knowledge, the technical program can pass through other essence without departing from its spirit or the reality of essential feature
Scheme is applied to realize.Therefore, embodiment disclosed above, in all respects are merely illustrative, and are not only
's.All changes within the scope of the utility model or in the range of being equal to the utility model include by the utility model.
Claims (4)
1. a kind of direct current protection circuit against input over-voltage, including high pressure resistant MOS device, biasing circuit and boostrap circuit；Its feature exists
In wherein the high pressure resistant MOS device is Q1, including drain electrode, grid and source level；The biasing circuit includes resistance R1, capacitor
C1, resistance R2 and diode D1；The biasing circuit is connected between the grid and source electrode of high pressure resistant MOS device Q1, it is described from
Lifting circuit includes resistance R3 and diode D2；The boostrap circuit is connected between the grid of high pressure resistant MOS device and capacitor C1.
2. a kind of direct current protection circuit against input over-voltage according to claim 1, it is characterised in that: the high pressure resistant MOS
The drain electrode of device is for accessing power supply voltage, source electrode for connecting the feeder ear of low-voltage circuit.
3. a kind of direct current protection circuit against input over-voltage according to claim 2, it is characterised in that: the boostrap circuit is logical
Biasing circuit is crossed to obtain bias current and raise the grid potential of high pressure resistant MOS device, so that the high pressure resistant MOS device
Source electrode output is suitable for the supply voltage of the low-voltage circuit operating voltage range.
4. a kind of direct current protection circuit against input over-voltage according to claim 1, it is characterised in that: the power supply electricity
A point two-way is flowed out, flows to the drain electrode of high pressure resistant MOS device all the way；The resistance R1 of biasing circuit is flowed to all the way；Go out from resistance R1
The electric current come divides two-way, flows to capacitor C1 all the way, then comes out from C1 and flows to ground terminal；Another way flows to resistance R2；Electric current from
Mono- road resistance R2 flows to the grid of high pressure resistant MOS device；Another way flows to diode D1；Electric current comes out to flow to from diode D1 and supply
Electric end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820853399.1U CN208272626U (en) | 2018-06-04 | 2018-06-04 | A kind of direct current protection circuit against input over-voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820853399.1U CN208272626U (en) | 2018-06-04 | 2018-06-04 | A kind of direct current protection circuit against input over-voltage |
Publications (1)
| Publication Number | Publication Date |
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| CN208272626U true CN208272626U (en) | 2018-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820853399.1U Active CN208272626U (en) | 2018-06-04 | 2018-06-04 | A kind of direct current protection circuit against input over-voltage |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110971114A (en) * | 2019-12-19 | 2020-04-07 | 北京德亚特应用科技有限公司 | Overvoltage protection circuit and power supply equipment |
-
2018
- 2018-06-04 CN CN201820853399.1U patent/CN208272626U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110971114A (en) * | 2019-12-19 | 2020-04-07 | 北京德亚特应用科技有限公司 | Overvoltage protection circuit and power supply equipment |
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