CN208272358U - Semiconductor laser bar item - Google Patents
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- CN208272358U CN208272358U CN201820680930.XU CN201820680930U CN208272358U CN 208272358 U CN208272358 U CN 208272358U CN 201820680930 U CN201820680930 U CN 201820680930U CN 208272358 U CN208272358 U CN 208272358U
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Abstract
The utility model provides a kind of semiconductor laser bar item, belongs to field of semiconductor lasers.It include: the GaAs epitaxial wafer for from the bottom to top including GaAs substrate, N-GaAs buffer layer, N-GaAs limiting layer, N-GaAs ducting layer, Quantum Well, P-GaAs ducting layer, P-GaAs limiting layer and P-GaAs ohmic contact layer；Ridge current injection area and the non-electrical stream injection window of formation are etched on P-GaAs ohmic contact layer；The optical confinement region of formation is etched on GaAs epitaxial wafer；In P-GaAs ohmic contact layer, the current-limiting layer that is not formed above part P-GaAs limiting layer that P-GaAs ohmic contact layer covers and optical confinement region, current-limiting layer etches away a part and exposes ridge current injection area；The both ends of the face P metal electrode layer above current-limiting layer and ridge current injection area, the face P metal electrode layer are equipped with electricity isolated region；The face the N metal electrode layer that GaAs substrate is formed far from the one side of N-GaAs buffer layer.The utility model improves the delivery efficiency of bar item, reduces threshold current, improves packaged stability, product yield and stability, extends the service life.
Description
Technical field
The utility model relates to semiconductor laser field, in particular to a kind of semiconductor laser bar item.
Background technique
Semiconductor laser has been widely used in optic communication, light sensing, information as a kind of important opto-electronic device
The fields such as storage, medical treatment, laser printing, optical oomputing and light-pumped solid state laser.However, semiconductor laser is with the working time
Increase, output power and efficiency can be all substantially reduced, or even the phenomenon that catastrophic failure occur, thus improve semiconductor laser
The delivery efficiency of device, reduction threshold current, increase service life become the most important thing for making semiconductor laser.
In currently used semiconductor laser bar item: forming ridge current injection area and non-electrical in P-GaAs ohmic contact layer
When flowing injection region, the P-GaAs ohmic contact layer in addition to ridge current injection area is all etched away, it is therefore an objective to prevent from leaking electricity
Stream.
However, the P-GaAs ohmic contact layer in addition to ridge current injection area is all etched away, it will lead to and laterally swash
The light field transverse coupling of initiation is penetrated, to keep bar threshold current relatively high；In addition, this to also result in duty ratio smaller, because
And cause stability when encapsulation poor.
Utility model content
To solve the above-mentioned problems, the utility model provides a kind of semiconductor laser bar item.
In order to solve the above technical problems, the technical solution adopted in the utility model is:
A kind of semiconductor laser bar item, the semiconductor laser bar item include:
GaAs epitaxial wafer, the GaAs epitaxial wafer successively include GaAs substrate, N-GaAs buffer layer, N-GaAs from the bottom to top
Limiting layer, N-GaAs ducting layer, Quantum Well, P-GaAs ducting layer, P-GaAs limiting layer and P-GaAs ohmic contact layer；
Ridge current injection area and the non-electrical stream injection window of formation are etched on the P-GaAs ohmic contact layer, it is described
Ridge current injection area is located at the middle position of the P-GaAs ohmic contact layer, and the non-electrical stream injection window is located at the ridge
Around type current injection area and the both ends of the P-GaAs ohmic contact layer, the P-GaAs ohmic contact layer etching are not extended to
It forms the non-electrical stream and injects exposed portion P-GaAs limiting layer after window；
The optical confinement region of formation is etched on the GaAs epitaxial wafer, the optical confinement region is to connect from described P-GaAs ohm
The region that contact layer two sides are not belonging to the ridge current injection area starts to etch, until vertically by the P-GaAs limiting layer, P-
GaAs ducting layer, Quantum Well, N-GaAs ducting layer and N-GaAs limiting layer cut through the corresponding region being etched away；
The part P-GaAs covered in the P-GaAs ohmic contact layer, not by the P-GaAs ohmic contact layer is limited
Layer and the optical confinement region top formed current-limiting layer, wherein the current-limiting layer be etched away a part with
Expose the ridge current injection area；
The face the P metal electrode layer formed above the current-limiting layer and the ridge current injection area, and the face P
Electricity isolated region is provided with above the both ends of metal electrode layer；
In the face the N metal electrode layer that the GaAs substrate is formed far from the one side of the N-GaAs buffer layer.
Optionally, the width of the ridge current injection area is 90~100um, and length is 1800~1900um；It is described non-
The lateral dimension that electric current injects ridge current injection area edge described in the Edge Distance of window is 60~80um, longitudinal size 50
~100um.
Optionally, the width of the optical confinement region is 20~30um；The depth of the optical confinement region is 40~60um.
Optionally, the thicknesses of layers of the current-limiting layer is 120~170um；The film layer that the current-limiting layer uses
Material is at least one of silica and titanium oxide.
Optionally, side of the face the P metal electrode layer from close to the current-limiting layer to far from the current-limiting layer
It successively include: upwards Ti layers, the Pt layer formed above Ti layers and the Au layer formed above Pt layers；Described Ti layers with a thickness of
0.4~0.6um；Described Pt layers with a thickness of 0.4~0.6um；Described Au layers with a thickness of 1.3~1.7um.
Optionally, the face N metal electrode layer includes: in direction of the GaAs substrate far from the N-GaAs limiting layer
The AuGeNi alloy-layer of upper formation, in the Au layer that the AuGeNi alloy-layer is formed far from the direction of the GaAs substrate；It is described
AuGeNi alloy-layer with a thickness of 0.4~0.6um, described Au layers with a thickness of 18~22um.
Optionally, the ante-chamber of the semiconductor laser bar item is coated with high transmittance film, the back cavity plating of the semiconductor laser bar item
There is high-reflecting film.
Optionally, the high transmittance film is from the ante-chamber close to the semiconductor laser bar item to far from the semiconductor laserBar
It successively include: ZnSe film layer and SiO on the direction of the ante-chamber of item2Film layer；The high-reflecting film is from close to the semiconductor laser bar
It successively include: Zn film layer, Si film layer and SiO on the back cavity of item to the direction of the back cavity far from the semiconductor laser bar item2Film
Layer.
Optionally, the current-limiting layer is etched away a part, and retains above the edge of the ridge current injection area
Current-limiting layer, to expose the intermediate region of the ridge current injection area.
Optionally, polish reduction processing after the GaAs substrate with a thickness of 120~140um.
The technical solution that the embodiments of the present invention provide can include the following benefits:
It is located at around ridge current injection area by setting non-electrical stream injection window and does not extend to P-GaAs Ohmic contact
Non- current injection area in the related technology is become non-electrical stream injection window, on the basis of preventing leakage current, one by the both ends of layer
The light field transverse coupling that lateral lasing causes can be effectively reduced to reduce threshold current, improve delivery efficiency；Second is that effectively mentioning
The high duty ratio of bar item, to improve the stability and yield of encapsulation.In addition, in later period encapsulation process, using soft gold
Belong to and semiconductor laser bar item back-off is adhered on substrate, the climbing that soft metal can be effectively prevented in non-electrical stream injection window is existing
As, the connection of soft metal Yu the face P metal electrode layer is prevented, and soft metal connect conducting with the face P metal electrode layer and can burn bar item
Bad, therefore, the introducing of non-electrical stream injection window can effectively reduce the short circuit phenomenon when encapsulation of semiconductor laser bar item, to mention
Caused by height encapsulates yield, reduces because of short circuit while semiconductor laser bar item necrosis, semiconductor laser bar item is effectively increased
Stability and extend the service life of semiconductor laser.
To sum up, the introducing of non-electrical stream injection window improves semiconductor laser bar delivery efficiency, reduces its threshold value electricity
It flows, improve packaged stability and product yield, to reach the mesh for improving semiconductor laser bar stability and extending the service life
's.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows and meets the utility model
Embodiment, and be used to explain the principles of the present invention together with specification.
Fig. 1 is the structural schematic diagram of GaAs epitaxial wafer provided by the utility model.
Fig. 2 is the structural schematic diagram of semiconductor laser bar item provided by the utility model.
Fig. 3 is the architecture diagram of a luminescence unit on semiconductor laser bar item provided by the utility model.
Fig. 4 is the top view of Fig. 3.
Fig. 5 is the schematic perspective view of Fig. 3.
Fig. 6 is a kind of structural schematic diagram of semiconductor laser bar item provided by the utility model.
Fig. 7 is the preparation method flow chart of semiconductor laser bar item provided by the utility model.
Each mark meaning is as follows in attached drawing: 1-P-GaAs ohmic contact layer；2-P-GaAs limiting layer；3-P-GaAs waveguide
Layer；4- Quantum Well；5-N-GaAs ducting layer；6-N-GaAs limiting layer；7-N-GaAs buffer layer；8-GaAs substrate；9- electric current limit
Preparative layer；The face 10-P metal electrode layer；The optical confinement region 11-；12- electricity isolated region；The face 13-N metal electrode layer；14- ridge electric current note
Enter area；The non-implanted window of 15-.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.
It is practical new to this below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer
Type embodiment is described in further detail.
As shown in Figures 1 to 6, the utility model provides a kind of semiconductor laser bar item, the semiconductor laser bar item packet
It includes:
GaAs epitaxial wafer, the GaAs epitaxial wafer successively include GaAs substrate 8, N-GaAs buffer layer 7, N- from the bottom to top
GaAs limiting layer 6, N-GaAs ducting layer 5, Quantum Well 4, P-GaAs ducting layer 3, P-GaAs limiting layer 2 and P-GaAs Ohmic contact
Layer 1；
Ridge current injection area 14 and the non-electrical stream injection window of formation are etched on the P-GaAs ohmic contact layer 1
15, the ridge current injection area 14 is located at the middle position of the P-GaAs ohmic contact layer 1, and the non-electrical stream injects window
15 are located at around the ridge current injection area 14 and do not extend to the both ends of the P-GaAs ohmic contact layer 1, the P-
The etching of GaAs ohmic contact layer 1 forms exposed portion P-GaAs limiting layer 2 after the non-electrical stream injection window 15；
The optical confinement region 11 of formation is etched on the GaAs epitaxial wafer, the optical confinement region 11 is from the Europe P-GaAs
The region that 1 two sides of nurse contact layer are not belonging to the ridge current injection area 14 starts to etch, until vertically limiting the P-GaAs
Preparative layer 2, P-GaAs ducting layer 3, Quantum Well 4, N-GaAs ducting layer 5 and N-GaAs limiting layer 6 cut through corresponding be etched away
Region；
The part P-GaAs covered in the P-GaAs ohmic contact layer 1, not by the P-GaAs ohmic contact layer is limited
The current-limiting layer 9 that the top of preparative layer 2 and the optical confinement region 11 is formed, wherein the current-limiting layer 9 is etched away one
Part is to expose the ridge current injection area 14；
The face the P metal electrode layer 10 formed above the current-limiting layer 9 and the ridge current injection area 14, and institute
It states and is provided with electricity isolated region 12 above the both ends of the face P metal electrode layer 10；
In the face the N metal electrode layer 13 that the GaAs substrate 8 is formed far from the one side of the N-GaAs buffer layer 7.
Wherein, the structural schematic diagram of GaAs epitaxial wafer is as shown in Figure 1.Due to the presence stable in the air of GaAs energy, and
And be not non-oxidizing acid attack, therefore, GaAs makees semiconductor material, and electron mobility is high, dielectric constant is small, can draw
Enter that deep-level impurity, electron effective mass are small, and band structure is special, thus epitaxial wafer is made using GaAs in the utility model.
N-GaAs buffer layer 7 is used to buffer the lattice mismatch between GaAs substrate 8 and N-GaAs limiting layer 6；N-GaAs limit
Preparative layer 6 is for providing electronics and limiting optical field distribution；N-GaAs ducting layer 5 and P-GaAs ducting layer 3 is for providing the anti-of photon
Penetrate propagation；Quantum Well 4 is luminescent layer；P-GaAs limiting layer 2 limits photon and enters P-GaAs limiting layer 2 for providing hole
Epitaxial layer in addition reduces the loss of light；P-GaAs ohmic contact layer 1 is used to form Ohmic contact with the face P metal electrode layer 10.
Fig. 2 is the structural schematic diagram of semiconductor laser bar item provided by the utility model.From figure 2 it can be seen that institute
When stating the ridge current injection area 14 for etching formation on P-GaAs ohmic contact layer 1 and non-electrical stream injection window 15, remaining P-
GaAs ohmic contact layer 1 and the part P-GaAs limiting layer 2 exposed.
As shown in figure 3, it is a luminescence unit architecture diagram of semiconductor laser bar item, etch as can be seen from Figure 3
Ridge current injection area 14 and non-electrical stream inject window 15.Fig. 4 is the top view of Fig. 3.The stereochemical structure that Fig. 5 is Fig. 3 is illustrated
Figure.Wherein, current-limiting layer 9 and the face P metal electrode layer 10 are covered with above Fig. 3 to ridge current injection area 14 shown in fig. 5.
For the ease of indicating that window 15 is injected in ridge current injection area 14 and non-electrical stream, ridge current injection area 14 is eliminated in Fig. 3
With the current-limiting layer 9 and the face P metal electrode layer 10 above non-electrical stream injection window 15.
Since a semiconductor laser bar item includes multiple luminescence units, referring to FIG. 6, being a semiconductor laser bar item
Structural schematic diagram, this bar of item includes 18 luminescence units, interference can be generated when luminous between adjacent light-emitting units, therefore,
In order to obstruct the interference between luminescence unit, the utility model produces optical confinement region 11, and the position of the optical confinement region 11 please join
Examine Fig. 2.
Wherein, as shown in Fig. 2, the optical confinement region 11 is the region being etched away, in this way, the electricity of 11 two sides of optical confinement region
Not intercommunication is flowed, so that the optical isolation of two sides be fallen, and then has obstructed the interference between luminescence unit.As shown in Fig. 2, the light every
Etching depth from area 11 is P-GaAs ohmic contact layer 1, P-GaAs limiting layer 2, P-GaAs ducting layer 3, Quantum Well 4, N-
The sum of GaAs ducting layer 5 and the depth of N-GaAs limiting layer 6.The etching depth of the optical confinement region 11 can be 40~60um.It is excellent
Selection of land, the etching depth of the optical confinement region 11 are 50um.The etching width of optical confinement region 11 can be 20~30um, it is preferable that
The etching width of optical confinement region 11 is 25um.
Electricity isolated region 12 please refers to Fig. 2 to Fig. 5, and after producing the electricity isolated region 12, semiconductor laser bar item is powered
When, can only partial current between two electricity isolated regions 12, in this way, diffraction will not be generated between single luminescence unit, to hinder
The only electrical interference between luminescence unit.
Optionally, the width of the ridge current injection area 14 is 90~100um, and length is 1800~1900um；It is described
The lateral dimension that non-electrical stream injects 14 edge of ridge current injection area described in the Edge Distance of window 15 is 60~80um, longitudinal ruler
Very little is 50~100um.
Optionally, since current-limiting layer 9 needs to cover P-GaAs ohmic contact layer 1, current-limiting layer 9
Thicknesses of layers need the thickness greater than P-GaAs ohmic contact layer 1, the thicknesses of layers of the current-limiting layer 9 can for 120~
170um, it is preferable that the thicknesses of layers of current-limiting layer 9 is 150um.The film material that the current-limiting layer 9 uses is oxidation
At least one of silicon and titanium oxide.Preferably, the film material that current-limiting layer 9 uses is SiO2。
Optionally, the face P metal electrode layer 10 is from close to the current-limiting layer 9 to the separate current-limiting layer 9
Direction on successively include: Ti layers, the Pt layer formed above Ti layers and the Au layer formed above Pt layers；Ti layers of the thickness
Degree is 0.4~0.6um；Described Pt layers with a thickness of 0.4~0.6um；Described Au layers with a thickness of 1.3~1.7um.Preferably,
Ti layers with a thickness of 0.5um；Pt layers with a thickness of 0.5um；Au layers with a thickness of 1.5um.
Optionally, the face N metal electrode layer 13 includes: in the GaAs substrate 8 far from the N-GaAs limiting layer 7
The AuGeNi alloy-layer being just upwardly formed, in the Au layer that the AuGeNi alloy-layer is formed far from the direction of the GaAs substrate；
The AuGeNi alloy-layer with a thickness of 0.4~0.6um, described Au layers with a thickness of 18~22um.Preferably, AuGeNi alloy
Layer with a thickness of 0.5um；Au layers with a thickness of 20um.
Optionally, due in the preparation process of semiconductor laser bar item, machine makes on same plate multiple is partly led
Therefore volumetric laser bar item after the completion of preparation, needs to dissociate the plate, to be dissociated into multiple independent semiconductor lasers bar
Item, and it is directed to each semiconductor laser bar item, high transmittance film is plated in its ante-chamber, chamber plates high-reflecting film behind.Wherein, described high saturating
Film is successively wrapped from the ante-chamber to the direction of the ante-chamber far from the semiconductor laser bar item of the close semiconductor laser bar item
It includes: ZnSe film layer and SiO2Film layer；When the ante-chamber of the semiconductor laser bar rule plates high transmittance film, specifically: in semiconductor laser
The ante-chamber of bar item plates one layer of ZnSe film layer, and plates SiO in ZnSe film layer2Film layer.The high-reflecting film is from close to the semiconductor
The back cavity of laser bar item to far from the semiconductor laser bar item back cavity direction on successively include: Zn film layer, Si film layer and
SiO2Film layer；When the back cavity of semiconductor laser bar item plates high-reflecting film, specifically: one layer is plated in the back cavity of semiconductor laser bar item
Zn film layer plates Si film layer in Zn film layer, and plates SiO in Si film layer2Film layer.Pass through the ante-chamber plating in semiconductor laser bar item
High transmittance film plates high-reflecting film in back cavity, the light transmittance of semiconductor laser bar item can be improved.
Optionally, as shown in Fig. 2, the current-limiting layer 9 is etched away a part, and retain the ridge electric current injection
Current-limiting layer 9 above 14 edge of area, to expose the intermediate region of the ridge current injection area 14.
Optionally, in order to improve the heat dissipation effect of semiconductor laser bar item, GaAs substrate 8 can be limited far from N-GaAs
Layer 7 carries out polishing reduction processing on one side so that the GaAs substrate 8 after polishing reduction processing with a thickness of 120~140um；It is excellent
Selection of land, polish reduction processing after GaAs substrate 8 with a thickness of 130um.By the way that GaAs substrate is thinned, semiconductor can be improved and swash
The heat dissipation effect of light bar item, to guarantee the stability of bar item and improve the service life of semiconductor laser bar item.
As shown in fig. 7, the preparation method of above-mentioned semiconductor laser bar item includes the following steps S1 to step S6:
S1, makes and cleans epitaxial wafer, and the GaAs epitaxial wafer is successively slow including GaAs substrate 8, N-GaAs from the bottom to top
Rush layer 7, N-GaAs limiting layer 6, N-GaAs ducting layer 5, Quantum Well 4, P-GaAs ducting layer 3, P-GaAs limiting layer 2 and P-GaAs
Ohmic contact layer 1.
S2, etching forms ridge current injection area 14 and non-electrical stream injection window on the P-GaAs ohmic contact layer 1
15, wherein the ridge current injection area 14 is located at the middle position of the P-GaAs ohmic contact layer 1, the non-electrical streamer
Enter the both ends that window 15 is located at around the ridge current injection area 14 and does not extend to the P-GaAs ohmic contact layer 1, institute
It states the etching of P-GaAs ohmic contact layer 1 and forms exposed portion P-GaAs limiting layer 2 after the non-electrical stream injection window 15.
Wherein, step S2 can use wet etching when performing etching to P-GaAs ohmic contact layer 1.Preferably, it carves
It loses the etching liquid ingredient used and proportion is as follows: CH3OH∶H3PO4∶H2O2=3~5: 1: 1.
S3 is carved since the region that 1 two sides of P-GaAs ohmic contact layer are not belonging to the ridge current injection area 14
Erosion, until vertically limiting the P-GaAs limiting layer 2, P-GaAs ducting layer 3, Quantum Well 4, N-GaAs ducting layer 5 and N-GaAs
Preparative layer 6 is cut through, until exposing the N-GaAs limiting layer 6, to produce optical confinement region 11.
In step s3, wet etching can be used, it is preferable that etch the etching liquid ingredient used and proportion is as follows:
H3PO4∶H2O2∶H2O=2: 1: 10~20.
S4, in the P-GaAs ohmic contact layer 1, the part P-GaAs that is not covered by the P-GaAs ohmic contact layer
The top of limiting layer 2 and the optical confinement region 11 forms current-limiting layer 9, and performs etching to the current-limiting layer 9, with
Expose the ridge current injection area 14.
Wherein, the plated film mode used to current-limiting layer can be PECVD.
In step s 4, when performing etching to current-limiting layer 9,14 edge of ridge current injection area can be retained
The current-limiting layer 9 of top, to expose the intermediate region of the ridge current injection area 14.Current-limiting layer 9 after etching is asked
With reference to Fig. 2, in this way, after the energization of semiconductor laser bar item, it is ensured that from the face P metal electrode layer 10 to the face N metal electrode
The electric current of layer 13 leads to the face N metal electrode layer 13 from the intermediate region of ridge current injection area 14.It is etched to current-limiting layer 9
Afterwards, 1 exposing ridge current injection area 14 of P-GaAs ohmic contact layer.
S5 forms the face P metal electrode layer 10 above the current-limiting layer 9 and the ridge current injection area 14, and
Electricity isolated region 12 is produced on above the both ends of the face P metal electrode layer 10.
Step S5 when forming the face the P metal electrode layer 10, specifically: the current-limiting layer 9 and the ridge electricity
It flows and forms Ti layers above injection region 14；Pt layers are formed above Ti layers；Au layers are formed above Pt layers.
S6 forms the face N metal electrode layer 13 far from the one side of the N-GaAs buffer layer 7 in the GaAs substrate 8.
In step s 6, when forming the face N metal electrode layer 13, specifically: in the GaAs substrate 8 far from the N-GaAs
AuGeNi alloy-layer is formed in the one side of limiting layer 7, and under 400~500 DEG C of environment, to the AuGeNi alloy-layer of formation
40~50s is heated, so that Ge ion is fused in the GaAs substrate 8；It is served as a contrast in the AuGeNi alloy-layer far from the GaAs
The one side at bottom 8 forms Au layers.
Embodiment of above is merely to illustrate the utility model, and is not limitation of the utility model, related technology neck
The those of ordinary skill in domain, in the case where not departing from the spirit and scope of the utility model, can also make a variety of changes and
Modification, therefore all equivalent technical solutions also belong to the scope of the utility model, the scope of patent protection of the utility model is answered
It is defined by the claims.
Claims (10)
1. a kind of semiconductor laser bar item, which is characterized in that the semiconductor laser bar item includes:
GaAs epitaxial wafer, the GaAs epitaxial wafer successively include GaAs substrate, N-GaAs buffer layer, N-GaAs limitation from the bottom to top
Layer, N-GaAs ducting layer, Quantum Well, P-GaAs ducting layer, P-GaAs limiting layer and P-GaAs ohmic contact layer；
Ridge current injection area and the non-electrical stream injection window of formation, the ridge are etched on the P-GaAs ohmic contact layer
Current injection area is located at the middle position of the P-GaAs ohmic contact layer, and the non-electrical stream injection window is located at the ridge electricity
The both ends of the P-GaAs ohmic contact layer are flowed around injection region and are not extended to, the P-GaAs ohmic contact layer etches to be formed
Exposed portion P-GaAs limiting layer after the non-electrical stream injection window；
The optical confinement region of formation is etched on the GaAs epitaxial wafer, the optical confinement region is from the P-GaAs ohmic contact layer
The region that two sides are not belonging to the ridge current injection area starts to etch, until vertically by the P-GaAs limiting layer, P-GaAs
Ducting layer, Quantum Well, N-GaAs ducting layer and N-GaAs limiting layer cut through the corresponding region being etched away；
The part P-GaAs limiting layer covered in the P-GaAs ohmic contact layer, not by the P-GaAs ohmic contact layer with
And the current-limiting layer that the top of the optical confinement region is formed, wherein the current-limiting layer is etched away a part to expose
The ridge current injection area；
The face the P metal electrode layer formed above the current-limiting layer and the ridge current injection area, and the face P metal
Electricity isolated region is provided with above the both ends of electrode layer；
In the face the N metal electrode layer that the GaAs substrate is formed far from the one side of the N-GaAs buffer layer.
2. semiconductor laser bar item according to claim 1, which is characterized in that the width of the ridge current injection area is
90~100um, length are 1800~1900um；Ridge current injection area side described in the Edge Distance of the non-electrical stream injection window
The lateral dimension of edge is 60~80um, and longitudinal size is 50~100um.
3. semiconductor laser bar item according to claim 1, which is characterized in that the width of the optical confinement region be 20~
30um；The depth of the optical confinement region is 40~60um.
4. semiconductor laser bar item according to claim 1, which is characterized in that the thicknesses of layers of the current-limiting layer is
120~170um；The film material that the current-limiting layer uses is at least one of silica and titanium oxide.
5. semiconductor laser bar item according to claim 1, which is characterized in that the face P metal electrode layer is from close to institute
To state successively include: Ti layers on current-limiting layer to the direction far from the current-limiting layer, is formed above Ti layers Pt layer and
The Au layer formed above Pt layers；Described Ti layers with a thickness of 0.4~0.6um；Described Pt layers with a thickness of 0.4~0.6um；Institute
State Au layers with a thickness of 1.3~1.7um.
6. semiconductor laser bar item according to claim 1, which is characterized in that the face N metal electrode layer includes: in institute
The AuGeNi alloy-layer that GaAs substrate is upwardly formed far from the side of the N-GaAs limiting layer is stated, it is remote in the AuGeNi alloy-layer
The Au layer that direction from the GaAs substrate is formed；The AuGeNi alloy-layer with a thickness of 0.4~0.6um, described Au layers
With a thickness of 18~22um.
7. semiconductor laser bar item according to claim 1, which is characterized in that the ante-chamber of the semiconductor laser bar item plates
There is high transmittance film, the back cavity of the semiconductor laser bar item is coated with high-reflecting film.
8. semiconductor laser bar item according to claim 7, which is characterized in that the high transmittance film is from close to the semiconductor
The ante-chamber of laser bar item is to far from the semiconductor laserBarIt successively include: ZnSe film layer and SiO on the direction of the ante-chamber of item2Film
Layer；The high-reflecting film is from the back cavity close to the semiconductor laser bar item to the side of the back cavity far from the semiconductor laser bar item
It successively include: upwards Zn film layer, Si film layer and SiO2Film layer.
9. semiconductor laser bar item according to claim 1, which is characterized in that the current-limiting layer is etched away one
Point, and retain the current-limiting layer above the edge of the ridge current injection area, to expose in the ridge current injection area
Between region.
10. semiconductor laser bar item according to claim 1, which is characterized in that the GaAs after polishing reduction processing
Substrate with a thickness of 120~140um.
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| CN201820680930.XU CN208272358U (en) | 2018-05-04 | 2018-05-04 | Semiconductor laser bar item |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820680930.XU CN208272358U (en) | 2018-05-04 | 2018-05-04 | Semiconductor laser bar item |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109921283A (en) * | 2019-02-01 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | A kind of semiconductor devices and preparation method |
| CN111682403A (en) * | 2020-06-22 | 2020-09-18 | 苏州长光华芯光电技术有限公司 | Limiting layer structure and manufacturing method thereof, semiconductor laser and manufacturing method thereof |
| CN114400496A (en) * | 2021-12-22 | 2022-04-26 | 西安立芯光电科技有限公司 | Semiconductor laser array bar manufacturing method and semiconductor laser array bar |
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2018
- 2018-05-04 CN CN201820680930.XU patent/CN208272358U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109921283A (en) * | 2019-02-01 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | A kind of semiconductor devices and preparation method |
| CN109921283B (en) * | 2019-02-01 | 2020-11-10 | 苏州长光华芯光电技术有限公司 | Semiconductor device and preparation method |
| CN111682403A (en) * | 2020-06-22 | 2020-09-18 | 苏州长光华芯光电技术有限公司 | Limiting layer structure and manufacturing method thereof, semiconductor laser and manufacturing method thereof |
| CN111682403B (en) * | 2020-06-22 | 2021-04-20 | 苏州长光华芯光电技术股份有限公司 | Limiting layer structure and manufacturing method thereof, semiconductor laser and manufacturing method thereof |
| CN114400496A (en) * | 2021-12-22 | 2022-04-26 | 西安立芯光电科技有限公司 | Semiconductor laser array bar manufacturing method and semiconductor laser array bar |
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Inventor after: Mi Honglong Inventor after: Guan Yongli Inventor after: Liang Jian Inventor after: Zhang Qiao Inventor after: Wang Lin Inventor before: Zhang Qiao Inventor before: Guan Yongli Inventor before: Mi Honglong Inventor before: Liang Jian Inventor before: Wang Lin |
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