CN208256880U - The orthogonal 3dB directional coupler of single-chip - Google Patents
The orthogonal 3dB directional coupler of single-chip Download PDFInfo
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- CN208256880U CN208256880U CN201820492679.4U CN201820492679U CN208256880U CN 208256880 U CN208256880 U CN 208256880U CN 201820492679 U CN201820492679 U CN 201820492679U CN 208256880 U CN208256880 U CN 208256880U
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Abstract
The utility model discloses a kind of orthogonal 3dB directional coupler of single-chip, using one single chip, including tube core, substrate and metal routing；It include at least six passive devices in chip；Passive device is inductor or capacitor；At least two be inductor in passive device；The construction of two inductors on tube core is made of upper layer metal routing and lower metal cabling plane coiling respectively, is referred to as upper layer inductance and lower layer's inductance；The upper layer metal routing of upper layer inductance and the lower metal of lower layer's inductance walk line overlap, and two inductance superpositions generate mutual inductance；There is dielectric layer between two inductance.Substrate material on tube core is one or more in silicon, silicon carbide, sapphire, group Ⅲ-Ⅴ compound semiconductor or other doped semiconductor materials.The material of metal routing is gold, copper or other metals.The utility model outer dimension is compact, and integrated level is high；It is low in cost；Precision is controllable, and consistency is good.
Description
Technical field
The utility model relates to RF IC technology more particularly to a kind of orthogonal 3dB directional couplers of single-chip.
Background technique
With the rapid development in the fields such as wireless communication, space communication, for receiving and emitting the core component in link,
For low-noise amplifier and power amplifier, higher want is proposed to bandwidth, standing-wave ratio and reliability etc.
It asks.Balance amplifier structure has many advantages, such as high stability and reliability, cascade operation and power combing easy to accomplish.
Orthogonal 3dB directional coupler is four port networks, is that design balance amplifier and low-noise amplifier are common
Network structure.Existing traditional orthogonal 3dB directional coupler generallys use microstrip design and production (such as Fig. 1).But use this
The orthogonal three-dB coupler that mode designs, chip occupying area is big, at high cost, is not easy to integrate.
Therefore, there is an urgent need to a kind of small size quadrature hybrid couplers, with lesser outer dimension and higher collection
Cheng Du, and at the same time having cheap manufacturing cost and high-performance.
Utility model content
In order to overcome the above-mentioned deficiencies of the prior art, the utility model provides a kind of single-chip orthogonal 3dB directional coupler,
Have the advantages that chip occupying area is small, integrated level is high, manufacturing cost is low.
Technical solution provided by the utility model is:
A kind of single-chip orthogonal 3dB directional coupler includes at least six passive devices in chip, wherein at least includes two
A inductor, inductor and capacitor are realized on same tube core；Two inductor configurations on tube core are respectively by upper layer
Metal routing and lower metal cabling realize planar inductor coiling, and two inductance are realized in upper and lower level and are overlapped；The substrate of tube core
Material properties be it is a kind of in silicon, silicon carbide, sapphire, group Ⅲ-Ⅴ compound semiconductor or other doped semiconductor materials or
Person is a variety of；The material properties of metal routing on tube core are gold, copper or other metals.
The orthogonal 3dB directional coupler of single-chip of an embodiment of the present invention design includes two inductance and four electricity
Hold, the upper layer metal routing of upper layer inductor and the lower metal cabling of lower layer's inductor are completely overlapped, reach degree of coupling highest
Effect.
Compared with prior art, the utility model has the beneficial effects that
The utility model provides a kind of single-chip orthogonal 3dB directional coupler, includes at least four passive device in chip,
Wherein at least two inductor, inductor and capacitor are realized on same tube core；Two inductor superpositions can increase electricity
Mutual inductance between sense, while reducing the area of orthocoupler.Specifically, the utility model has following technical advantage:
(1) outer dimension is compact, and integrated level is high；
(2) manufacturing cost is cheap；
(3) precision is controllable, and consistency is good.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the orthogonal 3dB directional coupler of existing conventional microstrip line design；
Wherein, " Input " is the input terminal of directional coupler, and signal is usually inputted from this end；" -90 ° " are directional couple
The phase phase difference -90 of the output end of device, output signal and input signal is spent, and ideally, power is the half of input signal；
" -180 ° " another outputs for directional coupler, phase phase difference -180 degree of output signal and input signal, ideal situation
Under, power is the half of input signal；" Isolated " is the isolation end of directional coupler, ideally this port inactivity
Output.
Fig. 2 is the perspective view of the orthogonal 3dB directional coupler one embodiment of single-chip provided by the utility model；
Wherein, 100-tube core；101-on piece the wire-wound inductors made using upper layer metal；102-apply lower metal
The on piece wire-wound inductor of production；103 and 105 be two ports of upper layer wire-wound inductor 101 respectively, and label 1 is rising for inductance 101
Point, label 2 are the terminal of inductance 101；104 and 106 be two ports of lower layer's wire-wound inductor 102 respectively, and label 3 is inductance
102 starting point, label 4 are the terminal of inductance 102；There is dielectric layer between inductance 101 and inductance 102, two inductance superpositions generate
Mutual inductance.
Fig. 3 is the top view of the orthogonal 3dB directional coupler one embodiment of single-chip provided by the utility model；
Wherein, 301 be the on piece wire-wound inductor made using upper layer metal；302 be the on piece made using lower metal
Wire-wound inductor；Inductance 301 is superimposed completely with inductance 302, it is possible to increase the mutual inductance between two inductance；Meanwhile it reducing orthogonal
The area of coupler.
Fig. 4 is the utility model using the orthogonal 3dB directional coupler circuit diagram of lumped parameter realization；
Wherein, port PO RT P1 is the input terminal of directional coupler；Port PO RT P2 is " -90 degree " of directional coupler
The phase phase difference -90 of output end, output signal and input signal is spent, and ideally, power is the half of input signal, difference
About 3dB；Port PO RT P4 is " -180 degree " output end of directional coupler, the phase phase difference-of output signal and input signal
180 degree, ideally, power are the half of input signal, differ about 3dB；Port PO RT P3 is the isolation of directional coupler
End, ideally this port inactivity exports.
Fig. 5 is the Insertion Loss simulation result using the orthogonal 3dB directional coupling structure of the utility model；
Wherein, two curves are respectively between the Insertion Loss and PORT4 and PORT 1 between port PO RT 2 and PORT 1
Insertion Loss, in 1.825GHz, about 3dB.
Fig. 6 uses the phase simulation result of the orthogonal 3dB directional coupling structure of the utility model；
Wherein, the numerical value that curve is shown is the phase with the variation of frequency, between port PO RT2 and port PO RT4
Difference.In 1.821GHz, phase difference is about 90 degree.
Specific embodiment
With reference to the accompanying drawing, the utility model is further described by embodiment, but limitation is not originally practical in any way
Novel range.
In order to improve the integrated level of orthogonal 3dB directional coupler, keeps its chip occupying area small, utilize semiconductor technology
Integrated passive devices technology (Integrated Passive Device, referred to as IPD in the utility model) can produce electricity
Sensor and capacitor, and it is widely adopted design matching network.
The utility model provides a kind of single-chip orthogonal 3dB directional coupler, using one single chip, including tube core, substrate
And metal routing；Substrate is the lowest level part of tube core, and metal routing is usually made in substrate.According to technique and demand
Difference can make multiple layer metal cabling.The circuit function that metal routing is realized includes the connection of each module of circuit, inductance production
Deng.It include at least four passive devices in chip, passive device includes inductor and capacitor；At least two in four passive devices
A is inductor；Inductor and capacitor are realized on same tube core；Inductor configurations on tube core are respectively by upper layer gold
Belong to cabling and lower metal cabling realizes planar inductor coiling, two inductors are real in upper layer metal routing, lower metal cabling
Now it is overlapped；There is dielectric layer between two inductance, two inductance superpositions generate mutual inductance；The material properties of the substrate of tube core are silicon, carbon
It is one or more kinds of in SiClx, sapphire, group Ⅲ-Ⅴ compound semiconductor or other doped semiconductor materials；On tube core
The material properties of metal routing are gold, copper or other metals (such as aluminium, tungsten).Dielectric layer uses insulating materials, plays isolation
The effect on upper layer and lower metal.The utility model has the advantages that chip occupying area is small, integrated level is high, manufacturing cost is low.
Fig. 2 is the perspective view of one embodiment of the orthogonal 3dB directional coupling structure of single-chip of the utility model.Figure
In, 100 be tube core, and 101 be the on piece wire-wound inductor (upper layer wire-wound inductor) using the production of upper layer metal；102 be using lower layer
The on piece wire-wound inductor (lower layer's wire-wound inductor) of metal production.103 and 105 be two ports of upper layer wire-wound inductor 101 respectively；
104 and 106 be two ports of lower layer's wire-wound inductor 102 respectively.There are dielectric layer, two electricity between inductance 101 and inductance 102
Sense superposition generates mutual inductance.
If Fig. 3 is the top view of mutual inductance inductance in the orthogonal 3dB directional coupler of single-chip of the utility model.301 in figure
For the on piece wire-wound inductor of application upper layer metal production；302 be the on piece wire-wound inductor made using lower metal.Inductance 301
It is superimposed completely with inductance 302, it is possible to increase the mutual inductance between two inductance.Meanwhile reducing the area of orthocoupler.Fig. 4
Orthogonal 3dB directional coupler circuit diagram is as realized using lumped parameter, wherein port PO RT P1 is the defeated of directional coupler
Enter end；Port PO RT P2 is " -90 degree " output end of directional coupler, the phase phase difference -90 of output signal and input signal
Degree, ideally, power are the half of input signal, differ about 3dB；Port PO RT P4 is "-the 180 of directional coupler
Degree " output end, phase phase difference -180 degree of output signal and input signal, ideally, power are the half of input signal,
Differ about 3dB；Port PO RT P3 is the isolation end of directional coupler, and ideally this port inactivity exports.
Two inductance in circuit are respectively upper layer inductance, lower layer's inductance, and embodiment is to divide shown in Fig. 2 and Fig. 3
Not Cai Yong upper layer metal wire/lower metal line coiling realize that inductance is superimposed completely with lower layer inductance at the middle and upper levels, to increase mutual inductance
Coefficient.Fig. 5 is the embodiment Insertion Loss simulation result of the orthogonal 3dB directional coupler designed in this way, it can be seen that electricity
The Insertion Loss of magnetic emulation is about 3.4dB.Fig. 6 is that the embodiment phase of the orthogonal 3dB directional coupler designed in this way is imitative
True result, it can be seen that about 90 degree of phase difference.
By taking L-band as an example, the orthogonal three-dB coupler realized using existing conventional microstrip, area occupied is at least 4 squares lis
Rice, and the orthogonal three-dB coupler that the method for applying the utility model is realized, chip occupying area is only 0.64 square millimeter, face
Product is contracted to 1/1000.
Certainly, the utility model can also have other various embodiments, without departing substantially from the spirit of the present invention and its essence
In the case of, those skilled in the art can make various corresponding changes and modifications, but these according to the utility model
Corresponding changes and modifications all should belong to the protection scope of the utility model the attached claims.
Claims (5)
1. a kind of orthogonal 3dB directional coupler of single-chip, characterized in that one single chip, including tube core, substrate and metal is used to walk
Line；Substrate is located at the lowest level of tube core, and metal routing is placed on substrate；Multiple layer metal cabling can set multilayer, for realizing circuit
The connection of each module；It include at least six passive devices in chip；Passive device is inductor or capacitor；In passive device extremely
It less include two inductors；The construction of two inductors on tube core is respectively by upper layer metal routing and lower metal cabling plane
Coiling is made, and is referred to as upper layer inductor and lower layer's inductor；The upper layer metal routing and lower layer's inductor of upper layer inductor
Lower metal walk line overlap, pass through the superposition of two inductance and generate mutual inductances；It is equipped with and is situated between upper layer inductor and lower layer's inductor
Matter layer.
2. the orthogonal 3dB directional coupler of single-chip as described in claim 1, characterized in that the substrate material on tube core is silicon, carbon
One of SiClx, sapphire, group Ⅲ-Ⅴ compound semiconductor or other doped semiconductor materials.
3. the orthogonal 3dB directional coupler of single-chip as described in claim 1, characterized in that the material of the metal routing on tube core
For gold, copper or other metals.
4. the orthogonal 3dB directional coupler of single-chip as described in claim 1, characterized in that the passive device in chip includes two
A inductance and four capacitors, the upper layer metal routing of upper layer inductor and the lower metal cabling of lower layer's inductor are completely overlapped.
5. the orthogonal 3dB directional coupler of single-chip as described in claim 1, characterized in that dielectric layer uses insulating materials, is used for
Upper layer metal and lower metal is isolated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820492679.4U CN208256880U (en) | 2018-04-09 | 2018-04-09 | The orthogonal 3dB directional coupler of single-chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820492679.4U CN208256880U (en) | 2018-04-09 | 2018-04-09 | The orthogonal 3dB directional coupler of single-chip |
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| Publication Number | Publication Date |
|---|---|
| CN208256880U true CN208256880U (en) | 2018-12-18 |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190115 Address after: 100101 Building 1307, No. 6, Anhui Li District 2, Chaoyang District, Beijing Co-patentee after: Peking University Patentee after: Wang Yuchen Address before: 100101 room 505, unit 3, Kimcheon Times Square, 317, Tun Li, Chaoyang District, Beijing. Co-patentee before: Peking University Patentee before: Beijing fly fly Electronic Technology Co., Ltd. |
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| TR01 | Transfer of patent right |