CN208256685U - A kind of compound polysilicon chip - Google Patents
A kind of compound polysilicon chip Download PDFInfo
- Publication number
- CN208256685U CN208256685U CN201820297734.4U CN201820297734U CN208256685U CN 208256685 U CN208256685 U CN 208256685U CN 201820297734 U CN201820297734 U CN 201820297734U CN 208256685 U CN208256685 U CN 208256685U
- Authority
- CN
- China
- Prior art keywords
- polysilicon chip
- metal frame
- glue
- stained
- monomer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a kind of compound polysilicon chips, including polysilicon chip monomer, the side of the polysilicon chip monomer is bonded by glue and metal frame, the interior welds of the metal frame have chimb, the top of the chimb is stained with tempered glass piece by glue, the adjacent two sidewalls of the metal frame are welded with connection convex block, the metal frame other two side wall opposite with connection convex block offers connecting groove, the bottom of the polysilicon chip monomer is stained with insulating trip by glue, lateral location where the insulating trip is correspondingly connected with groove offers rectangular notch.In the utility model, metal frame is stained with by glue in the outside of polysilicon chip monomer, the top of metal frame is stained with tempered glass piece by glue, is stained with insulating trip by glue in the lower part of polysilicon chip, in this way compared to single polysilicon chip monomer, be less prone to phenomenon of rupture.
Description
Technical field
The utility model relates to silicon chip technology field more particularly to a kind of compound polysilicon chips.
Background technique
Polysilicon chip is a kind of form of elemental silicon.When the elemental silicon of melting solidifies under the conditions of supercooling, silicon atom is with gold
Hard rock lattice morphologic arrangement grows up to the different crystal grain of high preferred orientation at many nucleus, such as these nucleus, then these crystal grain combine
Come, just crystallizes into polysilicon.Polysilicon chip is divided into electron level and solar level.It first says solar level, is produced as solar energy
The raw material of industry chain is used for ingot casting or crystal-pulling silicon rod, is being cut into silicon wafer, is being produced into solar panel, be exactly satellite, space station
On solar energy sailboard, most of be also used in build solar power station, and domestic solar power station is seldom, although being his ring very much
Guarantor's green, but cost is very high, and the electricity charge are expensive, generally require government subsidy, and Europe is global most using solar energy, and Chinese
The main sales orientation of solar panel.Electronic-grade polycrystalline silicon is mainly used for electronic equipment, core for producing semiconductor material
The comparison of on piece is more.
Polysilicon chip monomer is due to the physical property of itself, and under normal temperature state, polysilicon chip quality is crisp, careless slightly appearance
Fracture is easily caused, and replaces inconvenience after the polysilicon chip monomer damage of the solar battery intralamellar part of polysilicon chip composition.
Utility model content
Purpose of the utility model is to solve disadvantages existing in the prior art, and a kind of compound polycrystalline proposed
Silicon wafer.
To achieve the goals above, the utility model adopts the technical scheme that a kind of compound polysilicon chip, including
The side of polysilicon chip monomer, the polysilicon chip monomer is bonded by glue and metal frame, the inside of the metal frame
It is welded with chimb, the top of the chimb is stained with tempered glass piece by glue, and the adjacent two sidewalls of the metal frame are equal
It is welded with connection convex block, the metal frame other two side wall opposite with connection convex block offers connecting groove, described more
The bottom of crystal silicon chip monomer is stained with insulating trip by glue, and lateral location where the insulating trip is correspondingly connected with groove offers
Rectangular notch.
It is as above-mentioned technical proposal to further describe:
The chimb is bonded to each other with polysilicon chip monomer.
It is as above-mentioned technical proposal to further describe:
The polysilicon chip monomer and tempered glass piece are identical as the in-profile of metal frame.
It is as above-mentioned technical proposal to further describe:
The distance between the upper surface of the chimb and the upper surface of metal frame are identical as the thickness of tempered glass piece.
It is as above-mentioned technical proposal to further describe:
The width and thickness of the connection convex block is identical as the groove width of connecting groove and groove depth respectively, connects the length of convex block
It is of same size with rectangular notch.
In the utility model, firstly, being stained with metal frame, metal frame by glue in the outside of polysilicon chip monomer
Top tempered glass piece is stained with by glue, insulating trip is stained with by glue in the lower part of polysilicon chip, it is opposite in this way
In single polysilicon chip monomer, it is compound after polysilicon chip intensity it is high, be less prone to phenomenon of rupture；Secondly, in metal frame
The chimb of interior welds contacted with the upper surface of polysilicon chip, and the side of metal frame is respectively arranged with connection convex block
And connecting groove, it can be realized the series connection of multiple groups polysilicon chip, and polycrystalline by the overlap joint of connection convex block and connecting groove in this way
It is convenient to replace after silicon wafer damage.
Detailed description of the invention
Fig. 1 be the utility model proposes a kind of compound polysilicon chip explosive view；
Fig. 2 is the structural schematic diagram of the utility model metal frame；
Fig. 3 is the structural schematic diagram of the utility model insulating trip.
Marginal data:
1- insulating trip, 2- polysilicon chip monomer, 3- metal frame, 4- tempered glass piece, 5- connection convex block, 6- chimb, 7-
Connecting groove, 8- rectangular notch.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.
Referring to Fig.1-3, the side of a kind of compound polysilicon chip, including polysilicon chip monomer 2, polysilicon chip monomer 2 is logical
It crosses glue and metal frame 3 bonds, the interior welds of metal frame 3 have chimb 6, and the top of chimb 6 is stained with steel by glue
Change sheet glass 4, the adjacent two sidewalls of metal frame 3 are welded with connection convex block 5, metal frame 3 with to connect convex block 5 opposite
Other two side wall offers connecting groove 7, and the bottom of polysilicon chip monomer 2 is stained with insulating trip 1, insulating trip 1 by glue
It is correspondingly connected with 7 place lateral location of groove and offers rectangular notch 8.
Chimb 6 is bonded to each other with polysilicon chip monomer 2, polysilicon chip monomer 2 and tempered glass piece 4 and metal frame 3
In-profile is identical, the thickness phase of the distance between the upper surface of chimb 6 and the upper surface of metal frame 3 with tempered glass piece 4
Together, the width and thickness for connecting convex block 5 is identical as the groove width of connecting groove 7 and groove depth respectively, connects the length and rectangle of convex block 5
Notch 8 it is of same size.
The surface of metal frame 3 is coated with insulated paint, the bottom surface and company that wherein chimb 6 is contacted with polysilicon chip monomer 2
It connects convex block 5 and is not coated with insulated paint.
Working principle: when installation, the side of polysilicon chip monomer 2 is coated with glue, then puts polysilicon chip monomer 2
Enter to the inside of metal frame 3, until the front of polysilicon chip monomer 2 is bonded with the bottom surface of chimb 6, it then again will insulation
Insulating trip 1, is then fitted into metal frame 3 by the upper surface of piece 1 and side glue coating so that insulating trip 1 respectively with metal
Framework 3 and polysilicon chip monomer 2 are adhered to each other, then by tempered glass piece 4 lean on proximal edges bottom glue coating, then with
The upper surface of chimb 6 is adhered to, later to assembled polysilicon chip as needed by two polysilicon chips of adjacent position
In such a way that connecting groove 7 and connection convex block 5 combine, the series connection of polysilicon chip is realized.
The preferable specific embodiment of the above, only the utility model, but the protection scope of the utility model is not
It is confined to this, anyone skilled in the art is within the technical scope disclosed by the utility model, practical according to this
Novel technical solution and its utility model design are subject to equivalent substitution or change, should all cover the protection model in the utility model
Within enclosing.
Claims (5)
1. a kind of compound polysilicon chip, including polysilicon chip monomer (2), which is characterized in that the polysilicon chip monomer (2)
Side is bonded by glue and metal frame (3), and the interior welds of the metal frame (3) have chimb (6), the chimb (6)
Top be stained with tempered glass piece (4) by glue, the adjacent two sidewalls of the metal frame (3) are welded with connection convex block
(5), the metal frame (3) other two side wall opposite with convex block (5) is connect offers connecting groove (7), the polycrystalline
The bottom of silicon wafer monomer (2) is stained with insulating trip (1) by glue, and the insulating trip (1) is correspondingly connected with side where groove (7)
Position offers rectangular notch (8).
2. a kind of compound polysilicon chip according to claim 1, which is characterized in that the chimb (6) and polysilicon chip
Monomer (2) is bonded to each other.
3. a kind of compound polysilicon chip according to claim 1, which is characterized in that the polysilicon chip monomer (2) and
Tempered glass piece (4) is identical as the in-profile of metal frame (3).
4. a kind of compound polysilicon chip according to claim 1, which is characterized in that the upper surface of the chimb (6) with
The distance between upper surface of metal frame (3) is identical as the thickness of tempered glass piece (4).
5. a kind of compound polysilicon chip according to claim 1, which is characterized in that the width of connection convex block (5)
It is identical as the groove width of connecting groove (7) and groove depth respectively with thickness, connect the length of convex block (5) and the width of rectangular notch (8)
It is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820297734.4U CN208256685U (en) | 2018-03-05 | 2018-03-05 | A kind of compound polysilicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820297734.4U CN208256685U (en) | 2018-03-05 | 2018-03-05 | A kind of compound polysilicon chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208256685U true CN208256685U (en) | 2018-12-18 |
Family
ID=64608912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820297734.4U Expired - Fee Related CN208256685U (en) | 2018-03-05 | 2018-03-05 | A kind of compound polysilicon chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208256685U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109703046A (en) * | 2018-12-28 | 2019-05-03 | 中国电子科技集团公司第十八研究所 | Film pasting method of aluminum-based solar cell panel for micro-nano satellite |
-
2018
- 2018-03-05 CN CN201820297734.4U patent/CN208256685U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109703046A (en) * | 2018-12-28 | 2019-05-03 | 中国电子科技集团公司第十八研究所 | Film pasting method of aluminum-based solar cell panel for micro-nano satellite |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181218 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |