CN208226569U - A kind of power supply transient overvoltage protection circuit of integrated chip - Google Patents
A kind of power supply transient overvoltage protection circuit of integrated chip Download PDFInfo
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- CN208226569U CN208226569U CN201821003520.8U CN201821003520U CN208226569U CN 208226569 U CN208226569 U CN 208226569U CN 201821003520 U CN201821003520 U CN 201821003520U CN 208226569 U CN208226569 U CN 208226569U
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Abstract
The utility model discloses a kind of power supply transient overvoltages of integrated chip to protect circuit; it is related to communication and electronic technology field; the circuit includes first-grade protection circuit; the first-grade protection circuit includes field-effect tube Q1 and resistance R1; the source electrode of the field-effect tube Q1 is connected with the feeder ear of integrated chip; the drain electrode of the field-effect tube Q1 is grounded after resistance R1, and the grid of the field-effect tube Q1 is connected with a Voltag driving circuit；When the transient voltage of integrated chip increases, the Voltag driving circuit drives the field-effect tube Q1 conducting, and the first-grade protection circuit carries out electric current and releases；When the transient voltage of integrated chip is constant or reduces, the Voltag driving circuit drives the field-effect tube Q1 to be not turned on.The power supply transient overvoltage of integrated chip provided by the utility model protects circuit, and electric current is carried out when power supply transient overvoltage occurs in integrated chip and is released, integrated chip can be effectively prevent to be burned.
Description
Technical field
The utility model relates to communicate and electronic technology field, and in particular to a kind of power supply transient overvoltage of integrated chip is protected
Protection circuit.
Background technique
With the development of microelectric technique, digital circuit is more and more integrated, and chip technology is reduced to 7nm from 100nm, collection
There is following two feature at chip:
(1) integrated chip requires supply voltage lower and lower, and nuclear-electric power supply voltage falls below 1V hereinafter, to power supply from 3.3V
The precision requirement of voltage is also higher and higher, and operating voltage range is reduced to 102% from the 105% of nominal voltage；
(2) electric current of integrated chip is increasing, reaches present 100A from former A, and current transients are larger, certain
A little CPU are likely to be breached hundred A/us.
When integrated chip is as loading, when transition occurs for the electric current of load, wink can occur for power supply output voltage
Becoming, load current increases moment, and negative overshoot occurs in output voltage, and load current reduces moment, and output voltage will appear positive overshoot,
Positive and negative overshoot amplitude is related with current variation speeds, if load current is sharply smaller, positive overshoot amplitude just be will increase, electric at this time
Source voltage may have the hidden danger being burned out so as to cause integrated chip beyond the safe operating voltage range of load.
In the prior art, the patent for being CN201220657625.1 referring to number of patent application, which disclose a kind of electricity
Source overvoltage crowbar, including over-voltage check circuit, field-effect tube Q1, clamp circuit, and the grid of the field-effect tube Q1 is through going here and there
Resistance R1 and resistance the R2 ground connection connect, the drain electrode of field-effect tube Q1 are power output end；The over-voltage checks that the voltage of circuit is defeated
Outlet is connected between resistance R1 and resistance R2, and over-voltage checks that the voltage input end of circuit is connect with the source electrode of field-effect tube Q1,
The output end of the clamp circuit is connect with the source electrode of field-effect tube Q1, the electricity of the input terminal of clamp circuit and over-voltage inspection circuit
Output end connection is pressed, over-voltage checks that the output end no-voltage of circuit is defeated when the source voltage of field-effect tube Q1 is lower than setting value
Out, the drain electrode output voltage of effect pipe Q1 is equal or close to source voltage；When the source voltage of field-effect tube Q1 is higher than setting value
When over-voltage check that the voltage of the voltage output end of circuit is increased to equal or close to source voltage, the drain electrode of effect pipe Q1, which exports, closes
Disconnected, output voltage is equal or close to zero.
The principle of the power supply overvoltage protection circuit is: field-effect tube Q1, clamp circuit and over-voltage check that circuit cooperates together
Use, can in the normal operating at voltages of system, can also when system voltage is excessively high automatic cutting controller power supply, protect
Protect controller internal component.
However, cutting integrated power supply needs to expend the regular hour, the power supply transient overvoltage of integrated chip can not be suitable for
Therefore protection is badly in need of developing a kind of power supply transient overvoltage protection circuit for being applicable to integrated chip, to prevent integrated chip quilt
It burns out.
Utility model content
In view of the deficiencies in the prior art, the purpose of this utility model is to provide a kind of power supply winks of integrated chip
State overvoltage crowbar carries out electric current when power supply transient overvoltage occurs in integrated chip and releases, can effectively prevent integrated chip quilt
It burns out.
To achieve the above objectives, the technical scheme adopted by the utility model is that:
A kind of power supply transient overvoltage protection circuit of integrated chip, including first-grade protection circuit, the first-grade protection circuit
Including field-effect tube Q1 and resistance R1, the source electrode of the field-effect tube Q1 is connected with the feeder ear of integrated chip, the field-effect
The drain electrode of pipe Q1 is grounded after resistance R1, and the grid of the field-effect tube Q1 is connected with a Voltag driving circuit；
When the power supply transient voltage of integrated chip increases, the Voltag driving circuit drives the field-effect tube Q1 to lead
Logical, the first-grade protection circuit carries out electric current and releases；When the transient voltage of integrated chip is constant or reduces, the voltage driving
Field-effect tube Q1 described in circuit drives is not turned on.
Based on the above technical solution, the Voltag driving circuit includes operational amplifier A1, capacitor C1, resistance R2
With resistance R3, the output end of the operational amplifier A1, which is connected, to be connected after the resistance R3 with the grid of the field-effect tube Q1,
The both ends the capacitor C1 are separately connected the reverse input end and output end of the operational amplifier A1, the one end the resistance R2 and institute
The reverse input end for stating operational amplifier A1 is connected, and the other end connects the source electrode of the field-effect tube Q1.
Based on the above technical solution, the Voltag driving circuit further includes one for the operational amplifier to be arranged
The reference voltage circuit of A1 reference voltage, the reference voltage circuit are connected with the positive input of operational amplifier A1.
Based on the above technical solution, the reference voltage circuit includes reference voltage, resistance R4 and resistance R5, institute
It states reference voltage and connects and be connected after the resistance R4 with the positive input of the operational amplifier A1, the operational amplifier A1
Positive input be grounded after the resistance R5.
Based on the above technical solution, there are two power input, one of power supplys by the operational amplifier A1
Input terminal connects supply voltage VCC, another power input ground connection.
Based on the above technical solution, the first-grade protection circuit further includes diode D1, the diode D1's
Anode is connected with the feeder ear of integrated chip, and the cathode of the diode D1 is connected with the source electrode of the field-effect tube Q1.
Based on the above technical solution, the diode D1 is germanium diode.
It based on the above technical solution, further include Transient Suppression Diode D2, the Transient Suppression Diode D2's
Cathode is connected with the anode of the diode D1, the plus earth of the Transient Suppression Diode D2.
Based on the above technical solution, the field-effect tube Q1 is P-channel metal-oxide-semiconductor.
Compared with the prior art, the advantages of the utility model are:
(1) the power supply transient overvoltage protection circuit of the integrated chip in the utility model includes field-effect tube Q1 and resistance
R1, the grid of field-effect tube Q1 are connected with a Voltag driving circuit, control whether field-effect tube Q1 leads by Voltag driving circuit
It is logical, it releases to realize and carry out electric current when power supply transient overvoltage occurs in integrated chip, integrated chip can be effectively prevent to be burned,
And when integrated chip does not occur power supply transient overvoltage, field-effect tube Q1 is not turned on, and not will increase output work consumption, and then to integrated
Chip load operating condition will not impact.
(2) Voltag driving circuit in the utility model includes operational amplifier A1, capacitor C1, resistance R2 and resistance R3,
The output end of operational amplifier A1, which is connected, to be connected after the resistance R3 with the grid of field-effect tube Q1, the Voltag driving circuit structure
Simply, reliable performance, at low cost.
(3) Voltag driving circuit in the utility model further includes one for the ginseng of operational amplifier A1 reference voltage to be arranged
Potential circuit is examined, reference voltage circuit is connected with the positive input of operational amplifier A1, and reference voltage circuit can be according to collection
The voltage levels of the positive input of operational amplifier A1 are adjusted, at the size of current of chip so as to meet integrated chip
Different demands, according to the difference of integrated chip applied voltage, corresponding adjusting reference voltage is applied widely, uses
It is very convenient.
(4) first-grade protection circuit in the utility model further includes diode D1, the anode and integrated chip of diode D1
Feeder ear be connected, due to diode have one-way conduction characteristic, can effectively prevent first-grade protection circuit generate reverse current, it is right
Integrated chip plays a protective role.
(5) the power supply transient overvoltage protection circuit of the integrated chip in the utility model further includes Transient Suppression Diode
D2, also known as TVS diode, when the two poles of the earth of TVS diode are by reversed transient state high energy impact events, it can be with minus 12 times of 10
The high impedance of its two interpolar is become Low ESR, absorbs up to thousands of watts of surge power, make two interpolars by the speed of square second-time
Voltage clamp in a predetermined value, the precision components being effectively protected in electronic circuit, from the damage of surge pulse, from
And it plays a very good protection to entire circuit.
Detailed description of the invention
Fig. 1 is that the power supply transient overvoltage of integrated chip in the utility model embodiment protects the circuit diagram of circuit.
Specific embodiment
The embodiments of the present invention are described in further detail below in conjunction with attached drawing.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Ground description, it is clear that described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is right below
The description only actually of at least one exemplary embodiment be it is illustrative, never as to the application and its application or use
Any restrictions.Based on the embodiment in the application, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, shall fall in the protection scope of this application.
Embodiment 1
Shown in Figure 1, the utility model embodiment provides a kind of power supply transient overvoltage protection circuit of integrated chip,
For protecting integrated chip not burnt out by power supply transient overvoltage.
The power supply transient overvoltage protection circuit of the integrated chip of the present embodiment includes first-grade protection circuit, and the electric current is released
Circuit includes field-effect tube Q1 and resistance R1, and the source electrode of the field-effect tube Q1 is connected with the feeder ear of integrated chip, the field
The drain electrode of effect pipe Q1 is grounded after resistance R1, and the grid of the field-effect tube Q1 is connected with a Voltag driving circuit；
When the power supply transient voltage of integrated chip increases, the Voltag driving circuit drives the field-effect tube Q1 to lead
Logical, the first-grade protection circuit carries out electric current and releases；When the power supply transient voltage of integrated chip is constant or reduces, the voltage
Driving circuit drives the field-effect tube Q1 to be not turned on.
The power supply transient overvoltage protection circuit of integrated chip in the utility model includes field-effect tube Q1 and resistance R1, field
The grid of effect pipe Q1 is connected with a Voltag driving circuit, controls whether field-effect tube Q1 is connected by Voltag driving circuit, from
And realize that electric current is carried out when power supply transient overvoltage occurs in integrated chip releases, and can effectively prevent integrated chip to be burned, and
When integrated chip does not occur power supply transient overvoltage, field-effect tube Q1 is not turned on, and not will increase output work consumption, and then to integrated chip
Load operating condition will not impact.
The main operational principle of the power supply transient overvoltage protection circuit of integrated chip in the utility model are as follows: due to integrated
Chip power voltage transition occur it is positive overshoot be load integrated chip electric current reduce caused by, originally it is practical
In novel, start a first-grade protection circuit immediately in the moment that load integrated chip electric current reduces, at this point, first-grade protection circuit
Equivalent to increase a load circuit, to increase the overall load electric current of power supply, reduce the variation of power source loads electric current, most
Reduce the positive overshoot of integrated chip voltage eventually.
Embodiment 2
The present embodiment the difference from embodiment 1 is that: the Voltag driving circuit include operational amplifier A1, capacitor C1,
Resistance R2 and resistance R3, the grid that the output end of the operational amplifier A1 is connected after the resistance R3 with the field-effect tube Q1
It is connected, the both ends the capacitor C1 are separately connected the reverse input end and output end of the operational amplifier A1, the resistance R2 mono-
End is connected with the reverse input end of the operational amplifier A1, and the other end connects the source electrode of the field-effect tube Q1.
There are two power input, one of power inputs to connect supply voltage VCC by the operational amplifier A1, separately
One power input ground connection, and the reverse input end voltage of the operational amplifier A1 is lower than supply voltage VCC.
Voltag driving circuit structure in the utility model embodiment is simple, reliable performance, at low cost, convenient on the market
It promotes the use of.
Embodiment 3
The present embodiment the difference from embodiment 1 is that: the Voltag driving circuit further includes one for the operation to be arranged
The reference voltage circuit of amplifier A1 reference voltage, the positive input phase of the reference voltage circuit and operational amplifier A1
Even.
Specifically, the reference voltage circuit includes reference voltage, resistance R4 and resistance R5, reference voltage series connection institute
It is connected after stating resistance R4 with the positive input of the operational amplifier A1, the positive input of the operational amplifier A1 passes through
It is grounded after the resistance R5.
Voltag driving circuit in the utility model further includes one for the reference of operational amplifier A1 reference voltage to be arranged
Potential circuit, reference voltage circuit are connected with the positive input of operational amplifier A1, and reference voltage circuit can be according to integrated
The size of current of chip adjusts the voltage levels of the positive input of operational amplifier A1, so as to meet integrated chip not
Same demand, according to the difference of integrated chip applied voltage, corresponding adjusting reference voltage is applied widely, uses non-
It is often convenient.
Embodiment 4
The present embodiment the difference from embodiment 1 is that: the first-grade protection circuit further includes diode D1, the diode
The anode of D1 is connected with the feeder ear of integrated chip, and the cathode of the diode D1 is connected with the source electrode of the field-effect tube Q1.
Since diode has one-way conduction characteristic, first-grade protection circuit can be effectively prevent to generate reverse current, integrated chip is played
Protective effect.
Preferably, the diode D1 is germanium diode.Since the conducting voltage of germanium diode is in 0.2~0.3V or so,
To be lower than Schottky diode, so that the forward direction conduction voltage drop of diode D1 is low as far as possible, when field-effect tube Q1 is not turned on, two poles
Pipe D1 pressure drop is very low, not will increase output work consumption, will not impact to integrated chip load operating condition, so that entire electricity
Road performance is more excellent.
Embodiment 5
The present embodiment the difference from embodiment 1 is that: the power supply transient overvoltage of integrated chip protection circuit further includes
Transient Suppression Diode D2, the cathode of the Transient Suppression Diode D2 are connected with the anode of the diode D1, the transient state
Inhibit the plus earth of diode D2.
Transient Suppression Diode D2 in the present embodiment is also known as TVS diode, when the two poles of the earth of TVS diode are by reversed
When transient state high energy impact events, the high impedance of its two interpolar can be become Low ESR with the speed of 10 minus 12 power second-time by it,
The surge power for absorbing up to thousands of watts, makes the voltage clamp of two interpolars in a predetermined value, is effectively protected in electronic circuit
Precision components, from the damage of surge pulse, to play a very good protection to entire circuit.
Embodiment 6
The present embodiment the difference from embodiment 1 is that: the field-effect tube Q1 be P-channel metal-oxide-semiconductor.
It is shown in Figure 1, the working principle of the power supply transient overvoltage protection circuit of the integrated chip of the utility model are as follows: by
Resistance R4 and resistance R5 divides reference voltage Vref, and the end positive input V+ of operational amplifier A1 is adjusted in realization,
The end V+ voltage can be suitably adjusted according to the pressure limiting amplitude demand of integrated chip；In the feelings that load integrated chip electric current strongly reduces
Under condition, the supply voltage Vout of integrated chip is quickly increased, and the reverse input end voltage V- of operational amplifier A1 is also increased,
When V- voltage is higher than V+ voltage, operational amplifier A1 output end V0 voltage is reduced, field-effect tube Q1 conducting, diode D1, resistance
R1 and field-effect tube Q1 composition access carries out electric current to Vout charge and releases, and Vout voltage slows down rising, to reduce positive overshoot
Amplitude carries out overvoltage protection to load integrated chip；When the electric current for loading integrated chip is constant or when electric current increases big, field
Effect pipe Q1 is in cut-off or lightly conducting state, not will increase the output power consumption of Vout, to integrated chip load operating condition
It will not impact.
The power supply transient overvoltage protection circuit application scenarios of the integrated chip of the present embodiment are very extensive, are suitble to all integrated
Application scenarios of the chip as load.
Specifically, in the present embodiment, when the supply voltage Vout of integrated chip is 1V, Vref reference power source is 2.5V,
It is divided by resistance R4 and resistance R5, the positive input V+ voltage of operational amplifier A1 is set as 0.9V；Diode D1
Select germanium diode, conduction voltage drop 0.3V；When the supply voltage Vout transient voltage of integrated chip is more than 1.2V, operation is put
The reverse input end voltage V- of big device A1 is higher than positive input V+, and operational amplifier A1 output is low, field-effect tube Q1 conducting,
Vout is by D1, Q1, R1 leakage current, and because load current increases, Vout voltage is fallen after rise；When Vout voltage fall back to 1.2V with
Under, the reverse input end voltage V- of operational amplifier A1 is lower than positive input V+, and operational amplifier A1 output is height, field-effect
Pipe Q1 cut-off, there is no electric currents to pass through D1, Q1, R1.
The utility model is not only limited to above-mentioned preferred forms, anyone can obtain under the enlightenment of the utility model
Other various forms of products out, however, make any variation in its shape or structure, it is all to have and the utility model phase
Same or similar technical solution, within its protection scope.
Claims (9)
1. a kind of power supply transient overvoltage of integrated chip protects circuit, it is characterised in that: including first-grade protection circuit, the electric current
Leadage circuit includes field-effect tube Q1 and resistance R1, and the source electrode of the field-effect tube Q1 is connected with the feeder ear of integrated chip, institute
The drain electrode for stating field-effect tube Q1 is grounded after resistance R1, and the grid of the field-effect tube Q1 is connected with voltage driving electricity
Road；
When the power supply transient voltage of integrated chip increases, the Voltag driving circuit drives the field-effect tube Q1 conducting, institute
First-grade protection circuit progress electric current is stated to release；When the power supply transient voltage of integrated chip is constant or reduces, the voltage driving
Field-effect tube Q1 described in circuit drives is not turned on.
2. the power supply transient overvoltage of integrated chip as described in claim 1 protects circuit, it is characterised in that: the voltage driving
Circuit includes the output end series connection electricity of operational amplifier A1, capacitor C1, resistance R2 and resistance R3, the operational amplifier A1
It is connected after resistance R3 with the grid of the field-effect tube Q1, the both ends the capacitor C1 are separately connected the reversed of the operational amplifier A1
Input terminal and output end, the one end the resistance R2 are connected with the reverse input end of the operational amplifier A1, and the other end connects institute
State the source electrode of field-effect tube Q1.
3. the power supply transient overvoltage of integrated chip as claimed in claim 2 protects circuit, it is characterised in that: the voltage driving
Circuit further includes one for being arranged the reference voltage circuit of the operational amplifier A1 reference voltage, the reference voltage circuit with
The positive input of operational amplifier A1 is connected.
4. the power supply transient overvoltage of integrated chip as claimed in claim 3 protects circuit, it is characterised in that: the reference voltage
Circuit includes reference voltage, resistance R4 and resistance R5, the reference voltage connect after the resistance R4 with the operational amplifier
The positive input of A1 is connected, and the positive input of the operational amplifier A1 is grounded after the resistance R5.
5. the power supply transient overvoltage of integrated chip as claimed in claim 2 protects circuit, it is characterised in that: the operation amplifier
For device A1 there are two power input, one of power input connects supply voltage VCC, another power input ground connection.
6. the power supply transient overvoltage of integrated chip as described in claim 1 protects circuit, it is characterised in that: the electric current is released
Circuit further includes diode D1, and the anode of the diode D1 is connected with the feeder ear of integrated chip, the yin of the diode D1
Pole is connected with the source electrode of the field-effect tube Q1.
7. the power supply transient overvoltage of integrated chip as claimed in claim 6 protects circuit, it is characterised in that: the diode D1
For germanium diode.
8. the power supply transient overvoltage of integrated chip as described in claim 1 protects circuit, it is characterised in that: further include transient state suppression
Diode D2 processed, the cathode of the Transient Suppression Diode D2 are connected with the anode of the diode D1, and the transient state inhibits two
The plus earth of pole pipe D2.
9. the power supply transient overvoltage of integrated chip as described in claim 1 protects circuit, it is characterised in that: the field-effect tube
Q1 is P-channel metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821003520.8U CN208226569U (en) | 2018-06-25 | 2018-06-25 | A kind of power supply transient overvoltage protection circuit of integrated chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821003520.8U CN208226569U (en) | 2018-06-25 | 2018-06-25 | A kind of power supply transient overvoltage protection circuit of integrated chip |
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| CN208226569U true CN208226569U (en) | 2018-12-11 |
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| CN201821003520.8U Active CN208226569U (en) | 2018-06-25 | 2018-06-25 | A kind of power supply transient overvoltage protection circuit of integrated chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109921400A (en) * | 2019-04-03 | 2019-06-21 | 昆山通达测科电子科技有限公司 | High-speed high-power surge voltage-suppressing circuit |
| CN110112720A (en) * | 2019-05-23 | 2019-08-09 | 上海艾为电子技术股份有限公司 | A kind of surge protection circuit, port chip and surge protection method |
| CN110855277A (en) * | 2019-12-02 | 2020-02-28 | 思瑞浦微电子科技（苏州）股份有限公司 | Adjustable clamping circuit |
| CN110971114A (en) * | 2019-12-19 | 2020-04-07 | 北京德亚特应用科技有限公司 | Overvoltage protection circuit and power supply equipment |
-
2018
- 2018-06-25 CN CN201821003520.8U patent/CN208226569U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109921400A (en) * | 2019-04-03 | 2019-06-21 | 昆山通达测科电子科技有限公司 | High-speed high-power surge voltage-suppressing circuit |
| CN109921400B (en) * | 2019-04-03 | 2021-08-17 | 昆山通达测科电子科技有限公司 | High-speed high-power surge voltage suppression circuit |
| CN110112720A (en) * | 2019-05-23 | 2019-08-09 | 上海艾为电子技术股份有限公司 | A kind of surge protection circuit, port chip and surge protection method |
| CN110112720B (en) * | 2019-05-23 | 2021-10-01 | 上海艾为电子技术股份有限公司 | Surge protection circuit, port chip and surge protection method |
| CN110855277A (en) * | 2019-12-02 | 2020-02-28 | 思瑞浦微电子科技（苏州）股份有限公司 | Adjustable clamping circuit |
| CN110971114A (en) * | 2019-12-19 | 2020-04-07 | 北京德亚特应用科技有限公司 | Overvoltage protection circuit and power supply equipment |
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Effective date of registration: 20200819 Address after: 430000 part of the third floor of cable building, Guandong science and Technology Park, Donghu New Technology Development Zone, Wuhan, Hubei Province Patentee after: Wuhan Changjiang Computing Technology Co., Ltd Address before: 430000 East Lake high tech Development Zone, Hubei Province, No. 6, No., high and new technology development zone, No. four Patentee before: FIBERHOME TELECOMMUNICATION TECHNOLOGIES Co.,Ltd. |