CN208208712U - A kind of scanning electron microscope system - Google Patents
A kind of scanning electron microscope system Download PDFInfo
- Publication number
- CN208208712U CN208208712U CN201820888588.2U CN201820888588U CN208208712U CN 208208712 U CN208208712 U CN 208208712U CN 201820888588 U CN201820888588 U CN 201820888588U CN 208208712 U CN208208712 U CN 208208712U
- Authority
- CN
- China
- Prior art keywords
- electron beam
- scanning electron
- electron microscope
- microscope system
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The utility model discloses a kind of scanning electron microscope systems, comprising: Wein filter, the complex objective lens being made of electric lens and magnetic lenses, mirror retrodeviate rotary device and sample stage；Wherein, Wein filter, between the electron source for the initial electron beam for being incident to the scanning electron microscope system positioned at the upper pole shoe of magnetic lenses and generation, for making the incident initial electron beam with the first energy along axis movement, the initial electron beam with the second energy deflects to the optical axis two sides of the initial electron beam；Complex objective lens form convergence electron beam for converging to the initial electron beam acted on through the Wein filter；Mirror retrodeviates rotary device, in the lower pole shoe bore of the magnetic lenses, for changing the direction of motion of the convergence electron beam, so that the sample to be tested in the convergence electron beam oblique incidence to the sample stage.
Description
Technical field
The utility model relates to Scanning electron microscopy more particularly to a kind of scanning electron microscope systems.
Background technique
The progress of the related fieldss such as material, biology, medicine is largely dependent upon to characterize its characteristic
Efficient imaging solutions, can carry out imaging to CONSTRUCTED SPECIFICATION information in three dimensions is key point.
Traditional scanning electron microscope realizes that sample inclines pendulum using mechanical sample stage, is inclined pendulum by sample stage, can be with
The image of sample same position different angle is obtained, the image analysis sample topography and interested that can be observed by different angle
Region, or sample 3-D image is obtained to the sample surfaces image reconstruction detected from different perspectives using image algorithm.But
By mechanical sample stage realize sample incline put when, the operating distance of scanning electron microscope can on the one hand increased, so drop
The resolution ratio of low scanning electron microscope makes scanning electron microscope generate additional aberration；On the other hand, mechanical style is utilized
Sample platform carry out sample incline pendulum realize to sample different angle be imaged when, mechanical mechanism incline put sample to specified angle realize need when
Between longer, the serious detection efficient for reducing scanning electron microscope.
Or scanning electron microscope is realized using the electron-optical arrangement of itself and observes sample with tilt angle；Such as benefit
With deflector electron beam, so that electron beam is deviateed inclined light shaft and be incident on sample surfaces scanning sample.But compared to
Electron beam does not have inclined condition and electron beam to be incident on the situation on sample, scanning electron microscopy along optical axis center motion vertical
Mirror is realized using the electron-optical arrangement of itself would generally bring additional aberration with tilt angle observation sample, to cause to gather
The increase of burnt beam spot, and then the resolution ratio of scanning electron microscope is caused to decline.Wherein, additional aberration specifically includes that deflection
Device deflection electron beam is when making its inclination, and deflector is inconsistent for the effect of different-energy electron beam to bring deflection color difference, such as
Shown in Fig. 1；The non-central optical axis region of lens is to different-energy electron focusing ability difference bring paraxonic color difference, as shown in Figure 2；
When non-central from the lens optical axis region incidence of electron beam, abaxial is apart from the different inconsistent brings of zone focusing ability
Coma, as shown in Figure 3.
With the development of scanning electron microscope, more pay attention to guaranteeing the resolution ratio under low energy (< 5keV), initially
When electron beam is on lower Voice segment to sample, the color difference of system would generally cause the resolution ratio of scanning electron microscope
Large effect.Since the electronics that electron source issues is not usually the electronics of pure single energy V, but contain certain energy
It dissipates, it is assumed that the electron beam that electron source issues contains the electronics of V ± Δ V, and the electronics of Δ V, which can finish the meeting, brings electron beam microscopes electric
Color difference in sub- optical system, most typically are the center color difference focused along object lens central optical axis；If there is deflector work in system
With deflector can bring deflection color difference；Electron beam is assembled in object lens off-axis region, can bring off-axis color difference.When electron beam is with low
When energy state (< 5keV) is incident on sample, various color difference will lead to the increase for focusing beam spot, to cause under resolution ratio
Drop.
Utility model content
In view of this, the utility model embodiment provides a kind of scanning electron microscope system, by electron beam inclination come
When scanning sample, tilted beam bring aberration can be reduced, improve the resolution ratio of scanning electron microscope system.
The utility model improves a kind of scanning electron microscope system, and the scanning electron microscope system includes:
The complex objective lens being made of electric lens and magnetic lenses；
The initial electron beam of the scanning electron microscope system is incident to positioned at the upper pole shoe of the magnetic lenses and generation
Electron source between, make the incident initial electron beam with the first energy along axis movement, there is the initial electricity of the second energy
Beamlet deflects to the Wein filter of the optical axis two sides of the initial electron beam；
The complex objective lens, for being converged to the initial electron beam acted on through the Wein filter, shape
At convergence electron beam；
And in the lower pole shoe bore of the magnetic lenses, change the direction of motion of the convergence electron beam, so that described
The mirror of sample to be tested in convergence electron beam oblique incidence to sample stage retrodeviates rotary device.
In one embodiment, the scanning electron microscope system, further includes: upper pole shoe and institute positioned at the magnetic lenses
State the high-voltage tube between electron source, the central axis of the high-voltage tube and the optical axis coincidence.
In one embodiment, the Wein filter includes: multipole magnetic deflector and multipole electric deflection device.
In one embodiment, the electricity that the Distribution of Magnetic Field and the multipole electric deflection device that the multipole magnetic deflector generates generate
Field distribution meets the first distribution occasion；First distribution occasion includes at least: close or coincidence.
In one embodiment, the magnetic lenses is saturating for half immersion magnetic lenses of current coil excitation or non-immersion magnetic
Mirror.
In one embodiment, the electric lens include: that the upper pole shoe of the magnetic lenses, the mirror retrodeviate rotary device and described
Sample stage.
In one embodiment, the electric lens include: that lower end surface, the sample stage and the mirror of the high-voltage tube retrodeviate
Rotary device.
In one embodiment, it is Calculations of Electrostatic Multipole electric deflection device that the mirror, which retrodeviates rotary device,.
In one embodiment, the mirror, which retrodeviates rotary device, has first voltage, an electrode as the electric lens.
In one embodiment, the Wein filter is Wien analyzer.
In the utility model embodiment, mirror retrodeviates rotary device and deflects to initial electron beam, makes electron beam with preset
Tilt angle is incident on sample to be tested surface, will so increase the aberration of sample to be tested surface focusing beam spot.Electromagnetic alternating field point
Parser generates appropriately sized electric field force and magnetic field force, is symmetrically offset to primary optical axis to the part electronics in initial electron beam
Two sides, be offset to the two sides of primary optical axis electronics enter the paraxial region of complex objective lens after, by complex objective lens converge and generate from
Axis color difference；By adjust Wein filter in multipole magnetic deflector electric current size and multipole electric deflection device voltage it is big
Small, the deflection color difference that the off-axis color difference for generating complex objective lens retrodeviates rotary device generation with mirror is cancelled out each other；In this way, in initial electricity
When beamlet oblique incidence to sample to be tested surface, focusing beam spot of the scanning electron microscope system on sample to be tested is as far as possible
The ideal beam spot of (centre focus) when close to initial electron beam vertical incidence to sample to be tested surface, to reduce tilted electron
Beam bring aberration, improves the resolution ratio of scanning electron microscope system；In addition, mirror retrodeviates rotary device in addition to initiating electron
Shu Jinhang deflection is outer and the component parts of electric lens, and participation forms retarding lens field, and it is thin inclined that the mirror, which retrodeviates rotary device,
Turn pole plate, the expensive real estate below magnetic lenses will not be occupied, reduce the operating distance of magnetic lenses, it is aobvious to further increase scanning electron
The resolution ratio of micromirror systems.
Detailed description of the invention
Fig. 1, which is that deflector is inconsistent for the effect of different-energy electron beam in the related technology, brings deflection color difference signal
Figure；
Fig. 2 be in the related technology the non-central optical axis region of lens to different-energy electron focusing ability difference bring paraxonic
Color difference schematic diagram；
Coma schematic diagram when Fig. 3 is non-central from the lens optical axis region incidence of electron beam in the related technology；
Fig. 4 is the composed structure schematic diagram of one scanning electron microscope system of the utility model embodiment；
Fig. 5 is the schematic diagram for the electric and magnetic fields that Wein filter generates in the utility model embodiment；
Fig. 6 is motion profile signal of the utility model embodiment initial electron beam after the Wein filter
Figure；
Fig. 7 a is the structure of the utility model embodiment octupole thin slice electric deflection device and the electrical schematic of each electrode；
Fig. 7 b is the structure of 12 wafer thin electric deflection device of the utility model embodiment and the electrical schematic of each electrode；
When Fig. 8 is that the utility model embodiment Wein filter is closed, mirror retrodeviates rotary device and generates deflection color difference
Schematic diagram.
Fig. 9 is the composed structure schematic diagram of two scanning electron microscope system of the utility model embodiment；
Figure 10 is an optional processing flow schematic diagram of sample detection method provided by the embodiment of the utility model；
Specific embodiment
With reference to the accompanying drawings and embodiments, the present invention will be further described in detail.It should be appreciated that this place is retouched
The specific embodiment stated is only used to explain the utility model, is not used to limit the utility model.
Embodiment one
A kind of one optional schematic diagram of scanning electron microscope system that the utility model embodiment one provides, such as Fig. 4
It is shown, comprising: Wein filter 105, the complex objective lens 11, the mirror post deflection that are made of electric lens 10 and magnetic lenses 107
Device 108 and sample stage 109.
In some embodiments, described: the function of Wein filter 105 can be realized by Wien analyzer.It is described
Wein filter 105, which is located at the upper pole shoe of the magnetic lenses 107 and generates, is incident to the scanning electron microscope
Between the electron source 101 of initial electron beam, and the center of the Wein filter 105 and the optical axis coincidence.
Here, the initial electron beam for being incident to the scanning electron microscope system is generated and is issued by electron source 101, from
The electrons that electron source 101 issues accelerate by the anode in electron source 101；In some embodiments, it is sent out from electron source 101
Electrons out are accelerated by a higher voltage V, as the beam energy after accelerating is greater than 5keV.The electron source 101 is
The electron source of field emission includes Xiao of field emitting electronic source such as the electron source of thermal field emission or the electron source of cold field emission
The transmitting source structures such as special base stage, absorption pole, anode.The electron beam issued from the electron source 101 is through diaphragm, plus lens, spy
After surveying the effects of electron optics components such as device, it is incident to Wein filter 105.The electricity such as diaphragm, plus lens, detector
Sub- optical component is omitted in each diagram of the utility model embodiment, and the electron-opticals such as diaphragm, plus lens, detector
Component is grounded, i.e. the voltage of the electron optics components such as diaphragm, plus lens, detector is zero.
In some embodiments, the Wein filter 105 is made of electric deflection device and magnetic deflector；Wherein,
The electric deflection device is multipole electric deflection device, and the magnetic deflector is multipole magnetic deflector.The Wein filter 105
One optional schematic diagram of the electric and magnetic fields of generation, as shown in figure 5, the electric field E that the Wein filter 105 generates
It is represented by dashed line, the magnetic field B that the Wein filter 105 generates is indicated by the solid line.The multipole magnetic deflector 105 produces
The field distribution that raw Distribution of Magnetic Field and the multipole electric deflection device generate meets the first distribution occasion；First distribution occasion
It includes at least: close or coincidence；The Distribution of Magnetic Field and the multipole electric deflection device that the i.e. described Wein filter 105 generates
The field distribution of generation is completely coincident or approaches.The electric and magnetic fields that electronics is generated by the Wein filter 105
When, the size and Orientation of suffered magnetic field force and the speed of initial electron beam are related, it is understood that pass through for electronics described
When the electric and magnetic fields that Wein filter 105 generates, the size and Orientation and initial electron beam of suffered magnetic field force
Energy V it is related.
Motion profile of the initial electron beam after the Wein filter 105, as shown in fig. 6, initial electron beam
Effect by contrary electric field force Fe and magnetic field force Fm simultaneously, and the electric field that all electron institutes are subject in initial electron beam
Power Fe size is identical, and the fast electronics of movement velocity is by bigger magnetic field force Fm；By adjusting Wein filter 105
Current value and voltage value, the electronics with the first energy (energy V) can be made by the size of electric field force Fe and magnetic field force Fm
Equal, contrary, therefore, the resultant force that the electronics that energy is V is subject to is 0, and motion profile does not deflect.With the second energy
The resultant force size that the electronics of (energy is V+ Δ V and energy is V- Δ V) is subject to is identical, contrary, and therefore, energy is V+ Δ V
110 two sides of optical axis are deflected by Wein filter 105 with the motion profile for the electronics that energy is V- Δ V.To along light
The electron beam that axis moves downward electronics of different-energy after the effect of Wein filter 105 will separate.
The complex objective lens 11 include magnetic lenses 107 and electric lens 10, and magnetic lenses 107 generates in the compound lens 11
The electric field that magnetic field and electric lens 10 generate forms compound electromagnetic field, jointly to the initial electricity through Wein filter 105
Beamlet is converged, and the high-resolution under convergence electron beam guarantee low-energy condition is formed.
In some embodiments, the magnetic lenses 107 can be half immersion magnetic lenses of current coil excitation, can also
To be non-immersion magnetic lenses；The magnetic lenses 107 is coiled into shell made of excitation coil and external magnetic material conducting wire
Composition, shell towards axial opening be respectively upper pole shoe and lower pole shoe, and along optical axis direction, the upper pole shoe be located at it is described under
The top of pole shoe, magnetic objective are formed between upper and lower pole shoe；The internal diameter of upper pole shoe is Φ 1, the internal diameter Φ 2 of lower pole shoe, as Φ 1
When >=Φ 2, magnetic objective is concentrated between the pole shoes there, is non-immersion magnetic lenses；As 1≤Φ of Φ 2, magnetic objective can be to test sample
Product leakage a part, forms half immersion lens.
In some embodiments, the electric lens 10 by magnetic lenses 107 upper pole shoe, sample stage 109 and mirror post deflection
Device 108 is constituted；The mirror retrodeviates the electricity that rotary device 108 and the sample stage 109 load same voltage respectively or be close
Pressure.The electric lens generate a decelerating field between magnetic lenses and sample, reduce the movement velocity of electron beam, reach electron beam
Lower drop point energy is obtained when sample.
The electric field that the magnetic field and electric lens 10 that magnetic lenses 107 generates in the compound lens 11 generate forms compound electromagnetism
, the electron beam is converged jointly, guarantees the high-resolution under low-energy condition.In the utility model embodiment, such as Fig. 6
It is shown, since the aggregate capabilities of the same position on complex objective lens 11 and the kinetic energy of electronics are inversely proportional.By electro-magnetic cross field analysis
After the deflection of device 105 along the symmetrical electronics of optical axis 110 after the convergence of complex objective lens 11, the big electronics deviation amount of energy is small；
Therefore, the big trajectory of electron motion of energy and lens angle theta1The trajectory of electron motion and lens angle theta small greater than energy2, i.e. θ1
>θ2.At this point, differential seat angle Δ θ=θ1-θ2It is by Wein filter 105 and 11 collective effect of complex objective lens to different-energy
Electronics carry out deflection it is different with aggregate capabilities caused by deflect off axis color difference formed.
The mirror retrodeviates rotary device 108, in the space that the lower pole shoe bore Φ 2 of the magnetic lenses 107 is formed.After the mirror
Arrangement for deflecting 108 generate deflection field be located at the magnetic lenses 107 generate magnetic field lower section, or with the magnetic lenses 107
The magnetic field lower part of generation, which exists, to partly overlap；The mirror retrodeviates the direction of motion of the rotary device 108 for the convergence electron beam, with
Make the sample to be tested in the convergence electron beam oblique incidence to the sample stage 109.
In some embodiments, the mirror retrodeviates rotary device 108 and is fixed on pole under the magnetic lenses 107 with ceramics seat
Boots, in the space of pole shoe bore under magnetic lenses.Meanwhile ceramics seat is for retrodeviating rotary device 108 to the magnetic lenses 107 and mirror
Play electrically isolated effect.When the magnetic lenses 107 is non-immersion magnetic lenses, the mirror retrodeviates the deflection of rotary device 108
Sensitivity is big；When the magnetic lenses 107 is half immersion magnetic lenses, the deflection sensitivity that the mirror retrodeviates rotary device 108 is small.
In some embodiments, it is the electric inclined of the multipole being made of the more valve electrodes of thin slice that the mirror, which retrodeviates rotary device 108,
Turn device, such as 8 poles, 12 poles, 16 poles, 20 are extremely etc..The mirror retrodeviates 108 entirety of rotary device and is loaded a voltage, as described
One electrode of electric lens 10；The structure of octupole thin slice electric deflection device and the electrical schematic of each electrode, as shown in Figure 7a, each
The voltage for being used to form deflection field can be loaded on electrode, form the deflecting electric field of two poles for deflection of a beam of electrons or quickly swept
It retouches.The corresponding potential of eight electrodes is respectively as follows: Vy+aVx, aVy+Vx,-aVy+Vx,-Vy+aVx,-Vy-aVx,-aVy-Vx, aVy-Vx,
Vy-aVx；Wherein, a is voltage ratio factor ⅤyFor the y durection component of voltage, VxFor the x durection component of voltage.12 wafer thins
The electrical schematic of the structure of electric deflection device and each electrode, as shown in Figure 7b, according to pressurization side shown in Fig. 7 b on each electrode
Formula and direction on-load voltage generate deflection field, and the deflecting electric field for forming two poles is scanned for deflection of a beam of electrons or quickly.12
The corresponding potential of electrode is respectively as follows: Vy, Vx, Vy, Vx,-Vy,-Vx,-Vy,-Vx,-Vy,-Vx, Vy,-Vx.Wherein, VyFor the y of voltage
Durection component, VxFor the x durection component of voltage.
It is that deflector is arranged in object lens rear or lower section that mirror, which retrodeviates rotary device, and mirror, which retrodeviates rotary device, can change electron beam
The direction of motion, when making electron beam oblique incidence to sample to be tested, it is incident to retrodeviate when rotary device does not work electron beam compared to mirror
The beam spot formed when to sample to be tested, can generate additional deflection aberration；The inclination of sample to be tested is incident in electron beam
When angle is greater than 10 ° or more, deflection aberration is especially apparent.Mirror retrodeviates rotary device and realizes the inclined principle of electron beam and structure more
Simply, still, mirror retrodeviates the lower section that rotary device is usually located at object lens, can occupy the expensive real estate between object lens and sample to be tested,
Cause object lens cannot be sufficiently small to the operating distance between sample to be tested, reduces the resolution ratio of scanning electron microscope.This reality
With in new embodiment, mirror retrodeviate rotary device 108 be arranged in pole shoe position and mirror to retrodeviate rotary device 108 very thin, it is saturating with the magnetic
The lower pole shoe lower end of mirror 107 flushes or slightly protrudes, and does not occupy the operating distance between magnetic lenses 107 and sample to be tested excessively,
Guarantee that object lens are sufficiently small to the operating distance between sample to be tested, improves the resolution ratio of scanning electron microscope.
In the case where Wien analyzer is closed, as shown in figure 8, retrodeviating the original that rotary device 108 generates deflection color difference for mirror
Reason figure.The electron beam moved downward along optical axis 110 retrodeviates rotary device 108 by mirror after the convergence of complex objective lens 11 and deflects, and generation is inclined
Oblique electron beam.Since the kinetic energy of electronic deflection amount and electronics is inversely proportional, that is, the fast electronic deflection amount of movement velocity is small, after by mirror
Arrangement for deflecting 108 deflect after electron trajectory closer to optical axis 110, it is α 1 that electronics, which is deflected front and back track angle, i.e., electron beam with
Deflection angle between optical axis 110 is α1The direction of motion be incident to the sample on sample stage 109；The slow electronics of movement velocity
Amount of deflection is big, and for electron trajectory further from optical axis 110, it is α that electronics, which is deflected front and back track angle, after being deflected by deflector 1082, i.e.,
Electron beam is α with the deflection angle between optical axis 1102The direction of motion be incident to the sample on sample stage 109.Here, α1>
α2；Electron beam is after the deflection of deflector 108, and the slow electronics of the movement velocity electronics fast relative to movement velocity is further from optical axis Δ
α angle, wherein Δ α=α1-α2, this differential seat angle is deflection caused by deflector is different to different-energy electronic deflection ability
What color difference was formed.
In the utility model embodiment, by adjusting the current value and voltage value of complex objective lens 11, issue electron source 101
Initial electron beam focus on sample to be tested surface；After the electron beam tilt angle required for determining, loaded by adjusting
Voltage value on each electrode that mirror retrodeviates rotary device 108 so that electron beam can be incident to the angle Cl of needs to
Sample surface, during this can by finely tuning the current value and voltage value of complex objective lens 11, with keep electron beam to
It good can be focused in sample, mirror retrodeviates deflection color difference caused by rotary device 108 and is determined at this time.Later, in electromagnetism
Intersect multipole magnetic deflector on-load voltage and in multipole magnetic deflector loading current value in split-field analyser 105, make it and has determined that
Object lens field collective effect, suitable off-axis color difference is generated to the electronics of different-energy, as shown in fig. 6, complex objective lens can be made
The deflection color difference that the 11 off-axis color difference generated retrodeviate the generation of rotary device 108 with mirror mutually makes up, so that eliminating mirror retrodeviates rotary device
The deflection aberration that 108 deflection electron beams generate, makes electron beam with the angle Cl needed and focuses on sample surfaces, and inclines at this
The region of sample is scanned under rake angle, forms scanning electron beam images.
Embodiment two
Scanning electron microscope system provided by the utility model embodiment two is mentioned with the utility model embodiment one
The scanning electron microscope system of confession is similar, the difference is that, the scanning electron microscopy that the utility model embodiment two provides
The composed structure of mirror system, as shown in figure 9, further including high-voltage tube 202；The high-voltage tube 202 is located at the upper pole shoe of magnetic lenses 107
Between the electron source for the initial electron beam for being incident to the scanning electron microscope system with generation, and the high-voltage tube 202
Central axis and the optical axis coincidence.A higher voltage, the initial electricity that electron source 101 issues are loaded on the high-voltage tube 202
Beamlet will keep higher energy by high-voltage tube 202, to reduce the influence of space charge effect；The electric lens 10 are by height
The lower end surface of pressure pipe 202, the sample stage 109 and the mirror retrodeviate the composition of rotary device 108, in magnetic lenses 107 and sample to be tested
Between formed one deceleration electrostatic field.The Wein filter 105 between upper high-voltage tube and lower high-voltage tube, and
The center of Wein filter 105 is overlapped with optical axis 110, and the Wein filter 105 is by multipole electric deflection
Device and multipole magnetic deflector are constituted, and ceramic insulation high pressure is used between multipole electric deflection device and multipole magnetic deflector.
Embodiment three
Based on the above embodiment one and embodiment two described in scanning electron microscope system, the utility model embodiment three
A kind of sample detection method is also provided, an optional process flow of the sample detection method, as shown in Figure 10, including it is following
Step:
Step S101, the initial electron beam that electron source issues focuses under the action of complex objective lens is incident to sample to be tested table
Face.
In the utility model embodiment, before initial electron beam is incident to the complex objective lens of scanning electron microscope, first
It closes Wein filter and mirror retrodeviates rotary device, close Wein filter and refer to not for electro-magnetic cross field analysis
Device on-load voltage and electric current, closing mirror retrodeviate rotary device and refer to that not retrodeviating rotary device for mirror loads deflection voltage；Electron source generates
With a branch of initial electron beam with certain energy of sending, complex objective lens current value and voltage value are adjusted, initial electron beam is passed through
After complex objective lens focus and slow down, is reached on sample to be tested with low energy, form the focusing beam spot of very little.The process is electricity
Beamlet centre focus process, so that initial electron beam forms the focusing beam spot for the condition that meets on sample to be tested surface.
Step S102, initial electron beam are incident to be measured under the action of mirror retrodeviates rotary device with the tilt angle of setting
Sample.
In some embodiments, in the case where Wein filter is closed, rotary device is retrodeviated to mirror and is integrally loaded
One voltage, an electrode as electric lens；In addition, load is used to form respectively on each electrode that mirror retrodeviates rotary device
The voltage of deflection field, the deflecting electric field for forming two poles are scanned for deflection of a beam of electrons or quickly.Rotary device is retrodeviated by adjusting mirror
The deflection field of generation is deflected convergence electron beam, is incident on electron beam on sample to be tested surface with preset inclination angle.
At this point, being inversely proportional since mirror retrodeviates rotary device to the amount of deflection of electronics and the kinetic energy of electronics, the fast electronics of movement velocity is inclined
It is small to turn amount, electron trajectory is closer to optical axis after being retrodeviated rotary device deflection by mirror；The slow electronic deflection amount of movement velocity is big, after by mirror
Electron trajectory is further from optical axis after arrangement for deflecting deflection.The slow electronics of the movement velocity electronics fast relative to movement velocity further from
Optical axis.Therefore, compared to the electron beam of centre focus, mirror retrodeviates rotary device and generates deflection color difference to different-energy electronic deflection.
Complex objective lens can be finely tuned during this to keep electron beam well focussed.
Step S103 adjusts the voltage value and current value of Wein filter, and complex objective lens is made to generate off-axis color difference
Carry out the deflection color difference that compensating glass retrodeviates rotary device generation.
In some embodiments, the electric and magnetic fields distribution that electromagnetic field alternate analysis device generates is close or is completely coincident,
It adjusts Wein filter and generates the electric and magnetic fields for adapting to size；The electricity that electromagnetic field alternate analysis device is V for energy
Beamlet does not generate effect, and the electronics in electron beam that electromagnetic field alternate analysis device is V+ Δ V and V- Δ V for energy will deviate from
To the two sides of primary optical axis, be offset to the two sides of primary optical axis electronics enter complex objective lens paraxial region converged by complex objective lens after
Generate off-axis color difference；By adjust Wein filter voltage and current size, using complex objective lens generate from
Axis color difference carrys out the deflection color difference that compensating glass retrodeviates rotary device generation, until image clearly, so that eliminating mirror retrodeviates rotary device production
Raw aberration improves the resolution ratio of scanning electron microscope when observing sample using tilted beam.
It should be noted that electron beam oblique incidence involved in the utility model embodiment refers to sample to be tested
Electron beam is not orthogonal to the incidence of sample to be tested surface.
The above, only the specific implementation mode of the utility model, but the protection scope of the utility model is not limited to
In this, anyone skilled in the art within the technical scope disclosed by the utility model, can readily occur in variation
Or replacement, it should be covered within the scope of the utility model.Therefore, the protection scope of the utility model should be with the power
Subject to the protection scope that benefit requires.
Claims (10)
1. a kind of scanning electron microscope system, which is characterized in that the scanning electron microscope system includes:
The complex objective lens being made of electric lens and magnetic lenses；
The electricity of the initial electron beam of the scanning electron microscope system is incident to positioned at the upper pole shoe of the magnetic lenses and generation
Between component, make the incident initial electron beam with the first energy along axis movement, the initial electron beam with the second energy
Deflect to the Wein filter of the optical axis two sides of the initial electron beam；
The complex objective lens are formed and are converged for converging to the initial electron beam acted on through the Wein filter
Poly- electron beam；
And in the lower pole shoe bore of the magnetic lenses, change the direction of motion of the convergence electron beam, so that the convergence
The mirror of sample to be tested in electron beam oblique incidence to sample stage retrodeviates rotary device.
2. scanning electron microscope system as described in claim 1, which is characterized in that the scanning electron microscope system,
Further include: the high-voltage tube between the upper pole shoe and the electron source of the magnetic lenses, the central axis of the high-voltage tube and institute
State optical axis coincidence.
3. scanning electron microscope system as claimed in claim 1 or 2, which is characterized in that the Wein filter
It include: multipole magnetic deflector and multipole electric deflection device.
4. scanning electron microscope system as claimed in claim 3, which is characterized in that the magnetic that the multipole magnetic deflector generates
The field distribution that field distribution and the multipole electric deflection device generate meets the first distribution occasion；First distribution occasion at least wraps
It includes: close or coincidence.
5. scanning electron microscope system as claimed in claim 1 or 2, which is characterized in that the magnetic lenses is current coil
The half immersion magnetic lenses or non-immersion magnetic lenses of excitation.
6. scanning electron microscope system as described in claim 1, which is characterized in that the electric lens include: that the magnetic is saturating
Upper pole shoe, the mirror of mirror retrodeviate rotary device and the sample stage.
7. scanning electron microscope system as claimed in claim 2, which is characterized in that the electric lens include: the high pressure
The lower end surface of pipe, the sample stage and the mirror retrodeviate rotary device.
8. scanning electron microscope system as claimed in claim 1 or 2, which is characterized in that it is quiet that the mirror, which retrodeviates rotary device,
Electric multipole electric deflection device.
9. scanning electron microscope system as claimed in claim 8, which is characterized in that
The mirror, which retrodeviates rotary device, has first voltage, an electrode as the electric lens.
10. scanning electron microscope system as claimed in claim 1 or 2, which is characterized in that the Wein filter
For Wien analyzer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820888588.2U CN208208712U (en) | 2018-06-08 | 2018-06-08 | A kind of scanning electron microscope system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820888588.2U CN208208712U (en) | 2018-06-08 | 2018-06-08 | A kind of scanning electron microscope system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208208712U true CN208208712U (en) | 2018-12-07 |
Family
ID=64497313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820888588.2U Active CN208208712U (en) | 2018-06-08 | 2018-06-08 | A kind of scanning electron microscope system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208208712U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807118A (en) * | 2018-06-08 | 2018-11-13 | 聚束科技（北京）有限公司 | A kind of scanning electron microscope system and sample detection method |
| CN112071731A (en) * | 2020-07-23 | 2020-12-11 | 西安交通大学 | Design method for correcting second-order aberration based on Wien analyzer |
| WO2024218951A1 (en) * | 2023-04-20 | 2024-10-24 | 株式会社日立ハイテク | Charged particle beam device |
-
2018
- 2018-06-08 CN CN201820888588.2U patent/CN208208712U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807118A (en) * | 2018-06-08 | 2018-11-13 | 聚束科技（北京）有限公司 | A kind of scanning electron microscope system and sample detection method |
| CN108807118B (en) * | 2018-06-08 | 2024-05-07 | 聚束科技（北京）有限公司 | Scanning electron microscope system and sample detection method |
| CN112071731A (en) * | 2020-07-23 | 2020-12-11 | 西安交通大学 | Design method for correcting second-order aberration based on Wien analyzer |
| WO2024218951A1 (en) * | 2023-04-20 | 2024-10-24 | 株式会社日立ハイテク | Charged particle beam device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6989658B2 (en) | Multiple charged particle beam devices | |
| US6614026B1 (en) | Charged particle beam column | |
| JP4620981B2 (en) | Charged particle beam equipment | |
| JP6099113B2 (en) | Twin beam charged particle beam column and operation method thereof | |
| US8592776B2 (en) | Charged particle beam apparatus | |
| US6770887B2 (en) | Aberration-corrected charged-particle optical apparatus | |
| CN108807118B (en) | Scanning electron microscope system and sample detection method | |
| US8319192B2 (en) | Charged particle apparatus | |
| US20020104969A1 (en) | Swinging objective retarding immersion lens electron optics focusing, deflection and signal collection system and method | |
| JP2023517626A (en) | Specific improvements for multi-beam generation units and multi-beam deflection units | |
| CN208208712U (en) | A kind of scanning electron microscope system | |
| US7034297B2 (en) | Method and system for use in the monitoring of samples with a charged particle beam | |
| US6897442B2 (en) | Objective lens arrangement for use in a charged particle beam column | |
| US6960766B2 (en) | Swinging objective retarding immersion lens electron optics focusing, deflection and signal collection system and method | |
| JP4366313B2 (en) | Charged particle beam column and method for directing a charged particle beam | |
| JP3867048B2 (en) | Monochromator and scanning electron microscope using the same | |
| JP5149387B2 (en) | Charged particle gun and focused ion beam apparatus using the same | |
| JP4135221B2 (en) | Mapping electron microscope | |
| JP2001076659A (en) | Manufacture of charged-particle beam microscope, defect- inspecting device, and semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |