CN208188151U - Photoelectricity acceleration transducer based on CMOS - Google Patents
Photoelectricity acceleration transducer based on CMOS Download PDFInfo
- Publication number
- CN208188151U CN208188151U CN201820467232.1U CN201820467232U CN208188151U CN 208188151 U CN208188151 U CN 208188151U CN 201820467232 U CN201820467232 U CN 201820467232U CN 208188151 U CN208188151 U CN 208188151U
- Authority
- CN
- China
- Prior art keywords
- cmos
- barn door
- acceleration transducer
- light
- photoelectricity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Micromachines (AREA)
Abstract
The utility model discloses a kind of photoelectricity acceleration transducer based on CMOS, using MEMS plane machining, which is made of shortwave source of parallel light, Y-direction barn door, X to barn door and CMOS photovoltaic array.Several stripes are etched on barn door penetrates light.When object is along Y(X) axis movement when, Y(X) to the fringe position that barn door generates can generate variation, while CMOS photovoltaic array incudes the displacement of the variations of these fringe positions simultaneously unit of account time intra-striate, and Y(X can be obtained) motion conditions in axis direction.When object is moved along Z-direction, X can change to the rectangular interior light-sensitive element number that the illumination striped that barn door and Y-direction barn door generate is surrounded, and the motion conditions of Z-direction can be obtained by the variation of calculating number.The acceleration transducer of the utility model uses multidigit binary number representation intensity of illumination, has many advantages, such as precision height, high sensitivity.
Description
Technical field
The utility model relates to the photoelectricity acceleration transducers based on CMOS, belong to MEMS micro mechanical sensor field.
Background technique
With the development of micro mechanical technology, the manufacturing technology of micro-acceleration sensor is more and more mature, micro-acceleration sensing
Device has many advantages, such as that small in size, light weight and cost is low, low in energy consumption compared with traditional sensors, is widely used in aerospace, vapour
The fields such as turner industry and robot, have broad application prospects.
Although however there are multiple unit MEMS acceleration transducers to be studied in recent years, obtained yet in precision prominent
It is broken.General micro-acceleration sensor working principle is Newton's law, and with photoelectric continuous research, so that photoelectric effect
It is possibly realized applied to acceleration transducer.
Utility model content
The problems such as the utility model is low for precision of the existing technology proposes the photoelectricity acceleration based on CMOS and passes
Sensor.
In order to solve the above technical problems, the technical solution adopted in the utility model is, proposes the photoelectricity based on CMOS and add
Velocity sensor, it is characterised in that:
The structure of the acceleration transducer is from top to bottom successively from shortwave source of parallel light, Y-direction barn door, X to barn door
It is formed with CMOS photovoltaic array；
Several strips that are wide and being parallel to X-axis are etched on the Y-direction barn door for light transmission, and pass through supporting beam
It is fixed in the X-axis direction；
The X etches several strips that are isometric and being parallel to Y-axis on barn door for light transmission, and passes through supporting beam
It is fixed in the Y-axis direction；
The CMOS photovoltaic array is mainly made of monochromatic CMOS light point sensor.
Further, the optical signal that the monochrome CMOS light point sensor can will transmit through two barn doors is converted into telecommunications
Number, cmos cell rear class utilizes the degree of strength of multidigit binary number representation optical signal through AD sampling.
Further, when sensor upper acceleration or deceleration along the y axis, the item that is transmitted by observing Y-direction barn door
The motion conditions in Y-direction can be obtained in the change in location of line.
Further, when sensor upper acceleration or deceleration along the x axis, item from X to barn door that transmitted by observing
The motion conditions in X-direction can be obtained in the change in location of line.
Further, when sensor moves in Z-direction, X is surrounded to the transmission striped of barn door and Y-direction barn door
It is rectangular in light-sensitive element number can change, by calculate light-sensitive element number variation, the fortune in Z-direction can be obtained
Emotionally condition.
The utility model has the advantages that
1. the utility model is had due to being processed using MEMS technology compared to traditional acceleration transducer
It is small in size, the advantages that integrated level is high.
2. the utility model indicates motion conditions using optical signal, electric signal is converted optical signals to according to photoelectric effect,
The degree of strength of optical signal utilizes multidigit binary number representation, can more accurately indicate motion change situation, precision as a result
It is high compared to traditional sensor, it is highly reliable.
3. the utility model can change the precision and range of result by changing binary digit, digit is higher, and
Precision is higher.Therefore, this acceleration transducer high sensitivity, measurement range are wide.
Detailed description of the invention
Fig. 1 is the tomograph of the acceleration transducer of the utility model.
Fig. 2 is barn door schematic diagram.
Fig. 3 is the variation of the optical signal on photovoltaic array when Z axis losing side moves upwards.
Wherein, 1- shortwave source of parallel light, 2-Y to barn door, 3-X to barn door, 4-CMOS photovoltaic array, 5- support beam,
Illumination striped on 6- light transmission striped, the direction 7-x barn door, the striped on the barn door of the direction 8-y.
Specific embodiment
The technical solution of the utility model is described in further detail with reference to the accompanying drawings of the specification:
The photoelectricity acceleration transducer based on CMOS of the utility model is by shortwave source of parallel light 1, Y-direction shading refering to fig. 1
Plate 2, X are formed to barn door 3 and CMOS photovoltaic array 4；
Referring to Fig.2, X-axis barn door as Y-axis anti-dazzle plate structure, is vertically arranged both in final manufacturing process, hide
Have the light transmission striped 6 etched on tabula rasa, the barn door two sides of light transmission stripe direction be provided with support beam 5, barn door by
Perpendicular to light transmission stripe direction active force when biggish displacement will be generated along force direction, and encounter level in light transmission striped
Biggish displacement will not be generated when the active force in direction.Since the fixed-direction of two boards is different, for external force
It is corresponding also different, the external force in the direction X/Y is respectively corresponded with this.
When sensor is by X(Y) active force of axis direction when, X(Y) to barn door generate displacement, photoelectricity along Impact direction
X(Y on array) illumination striped can move accordingly, and the cmos cell by illumination will also change.Therefore, pass through calculating
The displacement of illumination striped in unit time can calculate sensor in X(Y) acceleration of axis direction.Single cmos cell can
There are multiple gray scales, the displacement that the other fringe position of same luminance level generates can be compared during the work time, and and its
The displacement COMPREHENSIVE CALCULATING that the striped of his gray scale generates, that is, can be improved measurement accuracy.
When active force of the sensor by Z-direction, the variation of photovoltaic array is referring to Fig. 3.Respectively with x barn door and y
On barn door for a stripe, 7 be the illumination striped on the barn door of the direction x in figure, and 8 be the striped on the barn door of the direction y, item
Line 7 and striped 8 surround one it is rectangular.When negative direction (positive direction) is mobile along the z-axis direction for sensor, according to Huygen's principle,
Surround it is rectangular can become smaller and (become larger), as long as at this time by calculate it is rectangular in include cmos element number situation of change, i.e.,
Sensor acceleration in the Z-axis direction can be obtained.Since single cmos cell there can be multiple gray scales, can pass through
The gray scale situation of change of rectangular interior cmos cell is calculated to calculate the size of acceleration, while improving measurement accuracy.
Affiliated CMOS photovoltaic array is made of several CMOS photoelectric transducer elements, and cmos cell is by above-mentioned two screening
Electric signal converted optical signals to by photoelectric effect after the light line that tabula rasa penetrates, behind sample to obtain the binary light of multidigit through AD
Strong data.The number of variation by the fringe position in photoelectricity array or the cmos cell by illumination variation, according to one
The motion conditions of object can be calculated in fixed mathematical relationship.
In summary: should based on CMOS photoelectricity acceleration transducer use MEMS surface manufacturing process, have it is small in size,
The advantages that integrated level is high.Also with the conversion of photosignal, have the advantages that precision height, high sensitivity.
The foregoing is merely the better embodiment of the utility model, the protection scope of the utility model is not with above-mentioned reality
The mode of applying is limited, as long as those of ordinary skill in the art's equivalent modification according to made by the utility model disclosure or change
Change, should be included in the scope of the protection described in the claims.
Claims (2)
1. the photoelectricity acceleration transducer based on CMOS, it is characterised in that:
The structure of the acceleration transducer from top to bottom successively from shortwave source of parallel light, Y-direction barn door, X to barn door and
CMOS photovoltaic array composition；
Several strips that are wide and being parallel to X-axis are etched on the Y-direction barn door for light transmission, and by supporting beam in X
It is fixed in axis direction；
The X etches several strips that are isometric and being parallel to Y-axis on barn door for light transmission, and by supporting beam in Y
It is fixed in axis direction；
The CMOS photovoltaic array is mainly made of monochromatic CMOS light point sensor.
2. the photoelectricity acceleration transducer according to claim 1 based on CMOS, it is characterised in that: the monochrome CMOS light
The optical signal that point sensor can will transmit through two barn doors is converted into electric signal, and cmos cell rear class utilizes multidigit two through AD sampling
The degree of strength of system number expression optical signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820467232.1U CN208188151U (en) | 2018-03-30 | 2018-03-30 | Photoelectricity acceleration transducer based on CMOS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820467232.1U CN208188151U (en) | 2018-03-30 | 2018-03-30 | Photoelectricity acceleration transducer based on CMOS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208188151U true CN208188151U (en) | 2018-12-04 |
Family
ID=64435667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820467232.1U Active CN208188151U (en) | 2018-03-30 | 2018-03-30 | Photoelectricity acceleration transducer based on CMOS |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208188151U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108196091A (en) * | 2018-03-30 | 2018-06-22 | 南京邮电大学 | Photoelectricity acceleration transducer based on CMOS |
-
2018
- 2018-03-30 CN CN201820467232.1U patent/CN208188151U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108196091A (en) * | 2018-03-30 | 2018-06-22 | 南京邮电大学 | Photoelectricity acceleration transducer based on CMOS |
| CN108196091B (en) * | 2018-03-30 | 2024-01-26 | 南京邮电大学 | Photoelectric acceleration sensor based on CMOS |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101907448B (en) | Depth measurement method based on binocular three-dimensional vision | |
| CN103076131A (en) | Six-dimensional force and torque sensor for measuring large force and small torque of large mechanical arm | |
| CN105865320A (en) | Displacement, force generation and measurement system and indentation, scratch and surface profile meter | |
| CN208188151U (en) | Photoelectricity acceleration transducer based on CMOS | |
| CN203217498U (en) | Six-degree-of-freedom optomagnetic three-dimensional mouse device | |
| CN105841857B (en) | A kind of parallel five-dimensional force sensor | |
| CN1161600C (en) | Structure-light 3D double-visual calibrating point generating method nad device | |
| CN105628280A (en) | Integrated transmission device strain gage force measurement supporting seat for armored vehicle | |
| CN205719350U (en) | A kind of parallel five-dimensional force sensor | |
| CN104034474B (en) | 3-SPU six-dimensional force cell sensor in parallel | |
| CN101738163B (en) | Six-dimensional pose measurement system of complete photoelectric type magnetic suspension workpiece table | |
| CN106092498B (en) | A kind of five component piezoelectric types " double balances " | |
| CN106092391B (en) | A kind of split type 2 D force sensor | |
| CN108196091A (en) | Photoelectricity acceleration transducer based on CMOS | |
| CN111999263A (en) | Mesoscale micro-nano optical fiber humidity sensor | |
| CN104237561A (en) | Spatial acceleration measuring method and device based on fiber grating curvature sensing network | |
| CN203178145U (en) | Automatic tester for torsional rigidity | |
| CN203981704U (en) | The condenser type micro-inertia sensor that a kind of band oneself based on edge effect demarcates | |
| CN107782914A (en) | A kind of triaxial accelerometer | |
| CN115575661A (en) | Two-dimensional capacitance differential MEMS wind speed and direction sensor | |
| CN203519229U (en) | Quartz piezoelectric six-dimensional force detecting device | |
| CN103737427B (en) | A kind of lathe is done more physical exercises the checkout gear of the axle depth of parallelism and method | |
| CN102371506B (en) | Device for measuring actuating of multi-shaft machine tool | |
| CN113551818B (en) | Measurement method and system based on negative Poisson ratio structure | |
| CN208188150U (en) | Acceleration transducer based on optical grating diffraction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191202 Address after: Room 107, floor 1, No. 30-06, GuangYue Road, Qixia street, Nanjing Economic and Technological Development Zone, Nanjing, Jiangsu Province Patentee after: Nanjing Erxin Electronic Co., Ltd Address before: 210023 Jiangsu city of Nanjing province Ya Dong new Yuen Road No. 9 Patentee before: Nanjing Post & Telecommunication Univ. |