CN208157413U - OLED substrate and display device - Google Patents
OLED substrate and display device Download PDFInfo
- Publication number
- CN208157413U CN208157413U CN201820835250.0U CN201820835250U CN208157413U CN 208157413 U CN208157413 U CN 208157413U CN 201820835250 U CN201820835250 U CN 201820835250U CN 208157413 U CN208157413 U CN 208157413U
- Authority
- CN
- China
- Prior art keywords
- layer
- pixel
- pattern
- groove structure
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The utility model discloses a kind of oled substrate and display devices.The oled substrate includes underlay substrate and pixel defining layer, first electrode, second electrode and organic luminous layer on the underlay substrate, the organic luminous layer is between the first electrode and the second electrode, the pixel defining layer includes that multiple pixels define pattern, each pixel, which defines, is provided with groove structure on pattern, the pixel defines and limits sub-pixel unit between pattern, and the organic luminous layer is located in the sub-pixel unit.The technical solution of oled substrate provided by the utility model and display device reduces the display crosstalk phenomenon between adjacent subpixels, improves color offset phenomenon of the OLED device under low ash rank.
Description
Technical field
The utility model relates to field of display technology, in particular to a kind of oled substrate and display device.
Background technique
Currently, in the manufacturing process of OLED device, during vapor deposition, since the oled substrate of mask plate and top does not have
Have and directly attach contact, there is certain spacing between the two.When vapor deposition, since organic material is deposited from bottom to top, then organic material
The area being deposited on oled substrate is often greater than the area of the opening of mask plate, and the organic material that is actually deposited has more
Area is known as shadow.
When the bit errors of oled substrate and mask plate, the electroluminescent hair that is easy to cause in the adjacent subpixels unit of vapor deposition
The phenomenon that overlapping together between photosphere there are shadow, even causes one in the electroluminescence layer in adjacent subpixels unit
The shadow of electroluminescence layer is located at the phenomenon on another electroluminescence layer, so that being easy to appear display crosstalk between adjacent subpixels
The phenomenon that.
It is empty when controlling some electroluminescence layer and shining so that under low ash rank simultaneously as the presence of above-mentioned phenomenon
It is easy to produce lateral transport while cave is from anode to cathode flow, the hole of the lateral transport is through hole transmission layer or hole
Implanted layer flows to the electroluminescence layer adjacent with the electroluminescence layer, thus when the electroluminescence layer being caused to shine, adjacent electricity
Electroluminescent layer results in OLED device and color offset phenomenon occurs under low ash rank also in luminous phenomenon.Similarly, in low ash rank
Under, when controlling some electroluminescence layer and shining, it is easy to produce lateral leakage current while electronics is from cathode to anode flow,
The electric leakage of the transverse direction flows through electron injecting layer or electron transfer layer flows to the electroluminescence layer adjacent with the electroluminescence layer, from
And when the electroluminescence layer being caused to shine, adjacent electroluminescence layer results in OLED device and exists also in luminous phenomenon
There is color offset phenomenon under low ash rank.
Therefore, in the prior art, due to the presence of above-mentioned phenomenon, will cause to be easy to appear display crosstalk between adjacent subpixels
The phenomenon that, meanwhile, under low ash rank, OLED device is easy to produce color offset phenomenon.
Utility model content
The utility model provides a kind of oled substrate and display device, existing for reducing the display crosstalk between adjacent subpixels
As improving color offset phenomenon of the OLED device under low ash rank.
To achieve the above object, the utility model provides a kind of oled substrate, the oled substrate include underlay substrate and
Pixel defining layer, first electrode, second electrode and organic luminous layer on the underlay substrate, the organic luminous layer position
Between the first electrode and the second electrode, the pixel defining layer includes that multiple pixels define pattern, each described
Pixel defines and is provided with groove structure on pattern, and the pixel defines and limits sub-pixel unit between pattern, organic hair
Photosphere is located in the sub-pixel unit.
Optionally, the depth bounds of the groove structure are 1.0 microns to 1.5 microns.
Optionally, the width range of the groove structure is 4.0 microns to 6.0 microns.
Optionally, the angle between the bottom wall and side wall of the groove structure is less than or equal to 90 degree.
Optionally, the shape of the longitudinal section of the groove structure is rectangle or arc.
Optionally, the organic luminous layer also extends close to the picture of the sub-pixel unit from the sub-pixel unit
Element defines the fringe region of pattern, and the fringe region is the region removed where the groove structure that the pixel defines pattern
Region in addition.
Optionally, filled layer is provided in the groove structure, the filled layer upper surface is relative to table on underlay substrate
The height in face is identical relative to the height of underlay substrate upper surface as organic luminous layer upper surface in fringe region.
Optionally, oled substrate further includes：Thinfilm pattern, the Thinfilm pattern are located at the edge that the pixel defines pattern
Region and the region where pixel defines the groove structure of pattern is extended to from the fringe region, the fringe region is pixel
Define the region in addition to the region where groove structure of pattern.
Optionally, the first electrode is located in the sub-pixel unit, and the organic luminous layer is located at first electricity
On extremely, the second electrode is located at that the pixel defines on pattern and the organic luminous layer and the covering pixel defines pattern
With the organic luminous layer.
To achieve the above object, the utility model provides a kind of display device, which includes the envelope being oppositely arranged
Assembling structure and above-mentioned oled substrate.
The beneficial effects of the utility model：
In the technical solution of oled substrate provided by the utility model and display device, pixel is defined and is limited between pattern
Sub-pixel unit out, each pixel define and are provided with groove structure on pattern, and organic luminous layer is located in sub-pixel unit.Due to
Pixel between adjacent organic luminous layer, which defines, is provided with groove structure on pattern, so that forming the luminous face of adjacent difference
When the organic luminous layer of color, be not likely to produce between the organic luminous layer of adjacent different luminescent colors it is overlapping, to reduce phase
Display crosstalk phenomenon between adjacent sub-pixel, meanwhile, under low ash rank, control some organic luminous layer shine when, be not likely to produce
The lateral transport of hole or electronics, to reduce the color offset phenomenon that OLED device is easy to appear under low ash rank.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram for oled substrate that the utility model embodiment one provides；
Fig. 2 defines a kind of structural schematic diagram of pattern for the pixel in Fig. 1；
Fig. 3 defines another structural schematic diagram of pattern for the pixel in Fig. 1；
Fig. 4 is a kind of structural schematic diagram for oled substrate that the utility model embodiment two provides；
Fig. 5 is the structural schematic diagram that pixel defines pattern and Thinfilm pattern in Fig. 4；
Fig. 6 is a kind of flow chart for oled substrate production method that the utility model embodiment four provides.
Fig. 7 is the schematic diagram to form buffer layer；
Fig. 8 is the schematic diagram to form tft layer；
Fig. 9 is the schematic diagram to form planarization layer；
Figure 10 is the schematic diagram for depositing first electrode material layer；
Figure 11 is the schematic diagram to form first electrode；
Figure 12 is the schematic diagram that pixel deposition defines material layer；
Figure 13 is the schematic diagram to form pixel and define pattern；
Figure 14 is the schematic diagram to form a kind of groove structure；
Figure 15 A is the schematic diagram to form a kind of groove structure；
Figure 15 B is the schematic diagram to form photoresist；
Figure 15 C is the schematic diagram to form opening；
Figure 15 D is the schematic diagram to form pixel and define pattern；
Figure 16 is the schematic diagram to form hole injection layer；
Figure 17 is the schematic diagram to form hole transmission layer；
Figure 18 is the schematic diagram to form electronic barrier layer；
Figure 19 is the schematic diagram to form electroluminescence layer；
Figure 20 is the schematic diagram to form hole blocking layer；
Figure 21 is the schematic diagram to form electron transfer layer；
Figure 22 is the schematic diagram to form electron injecting layer；
Figure 23 is the schematic diagram to form filled layer；
Figure 24 is the schematic diagram to form second electrode；
Figure 25 is the schematic diagram to form pattern space；
Figure 26 is the schematic diagram to form film material plies；
Figure 27 is the schematic diagram to form Thinfilm pattern and groove structure；
Figure 28 is the schematic diagram to form pixel and define pattern；
Figure 29 is a kind of flow chart for oled substrate production method that the utility model embodiment five provides.
Specific embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, with reference to the accompanying drawing to this reality
It is described in detail with the oled substrate of novel offer and display device.
Fig. 1 is a kind of structural schematic diagram for oled substrate that the utility model embodiment one provides, and Fig. 2 is the picture in Fig. 1
Element defines a kind of structural schematic diagram of pattern, as depicted in figs. 1 and 2, the oled substrate include underlay substrate 1 and be located at substrate base
Pixel defining layer (Pixel Definition Layer, abbreviation on plate 1：PDL), first electrode 3, second electrode 4 and organic
Luminescent layer 5, for organic luminous layer 5 between first electrode 3 and second electrode 3, pixel defining layer includes that multiple pixels define figure
Case 2, each pixel define and are provided with groove structure 21 on pattern 2, and pixel, which defines, limits sub-pixel unit P between pattern 2, have
Machine luminescent layer 5 is located in sub-pixel unit P.
In the present embodiment, as illustrated in fig. 1, it is preferred that first electrode 3, which is located at pixel, defines sub-pixel list between pattern 2
In first P, organic luminous layer 5 is located in first electrode 3, second electrode 4 be located at pixel define on pattern 2 and organic luminous layer 5 and
Covering pixel defines pattern 2 and organic luminous layer 5.
In the present embodiment, as depicted in figs. 1 and 2, organic luminous layer 5 also extends close to sub- picture from sub-pixel unit P
The pixel of plain unit P defines the fringe region B of pattern 2, as shown in Fig. 2, fringe region B be pixel define pattern 2 except groove
Region other than 21 region A of structure.Therefore, groove structure 21 can also play the work for defining adjacent organic luminous layer 5
With in other words, groove structure 21 can also play the role of defining adjacent sub-pixel.
As depicted in figs. 1 and 2, specifically, organic luminous layer 5 includes hole injection layer 51, hole transmission layer 52, electronics resistance
Barrier 53, electroluminescence layer 54, hole blocking layer 55, electron transfer layer 56 and electron injecting layer 57.In the present embodiment, in son
In pixel unit P and fringe region B, hole injection layer 51 is located in first electrode 3, and hole transmission layer 52 is located at hole injection layer
On 51, electronic barrier layer 53 is located on hole transmission layer 52, and electroluminescence layer 54 is located on electronic barrier layer 53, hole blocking layer
55 are located on electroluminescence layer 54, and electron transfer layer 56 is located on hole blocking layer 55, and electron injecting layer 57 is located at electron-transport
On layer 56.Wherein, electroluminescence layer 54 includes red electroluminescent layer (R), green electroluminescent layer (G) or the electroluminescent hair of blue
Photosphere (B), for example, the electroluminescence layer 54 on the left side is red electroluminescent layer (R) in Fig. 1, the electroluminescence layer 54 on the right is
Green electroluminescent layer (G).In the present embodiment, specifically, second electrode 4 is located at the electron injecting layer 57 in sub-pixel unit P
In the electron injecting layer 57 and fringe region B on the electron injecting layer 57 in fringe region B and in covering sub-pixel unit P
Electron injecting layer 57.
Since there are groove structures 21 between adjacent organic luminous layer 5, so that forming adjacent different luminescent colors
Electroluminescence layer 54 when, be not likely to produce between the electroluminescence layer 54 of adjacent different luminescent colors it is overlapping, to reduce
Display crosstalk phenomenon between adjacent subpixels.In the present embodiment, the pixel that groove structure 21 is set to defines the interposition of pattern 2
It sets.
In the present embodiment, as shown in Figure 1, hole injection layer 51, hole transmission layer 52, electronic barrier layer 53, hole barrier
Layer 55, electron transfer layer 56 and electron injecting layer 57 are also provided in groove structure 21.In groove structure 21, hole injection
Layer 51, hole transmission layer 52, electronic barrier layer 53, hole blocking layer 55, electron transfer layer 56 and electron injecting layer 57 are under
It is supreme to set gradually.Due to the presence of groove structure 21, hole injection layer 51, hole transmission layer 52, electricity are formed in vapor deposition
When sub- barrier layer 53, hole blocking layer 55, electron transfer layer 56 and electron injecting layer 57, hole injection layer 51, hole transport
Layer 52, electronic barrier layer 53, hole blocking layer 55, electron transfer layer 56 and electron injecting layer 57 are automatic at groove structure 2
It disconnects, falls into groove structure 21, i.e., be mutually disconnected connection between adjacent organic luminous layer 5.Therefore, under low ash rank,
Control some electroluminescence layer 54 shine when, be not likely to produce the lateral transport due to hole or electronics, caused by it is electroluminescent with this
The luminous phenomenon of the adjacent electroluminescence layer 54 of luminescent layer 54, so as to improve colour cast of the OLED device under low ash rank.This reality
It applies in example, hole injection layer 51, hole transmission layer 52, electronic barrier layer 53, hole blocking layer 55, electronics pass in groove structure 21
Defeated layer 56 and electron injecting layer 57 can also remove, but in order to save the process process, there is no need to remove.In the present embodiment,
When forming electroluminescence layer 54, the shadow of electroluminescence layer 54 is also possible to disconnect at groove structure 21, into groove knot
In structure 21, but due to the setting of groove structure 21, so that connection is mutually disconnected between adjacent organic luminous layer 5, therefore
When controlling some electroluminescence layer 54 and shining, it is not likely to produce the feelings of hole or electronics lateral transport to adjacent electroluminescence layer 54
Condition not will cause the phenomenon that showing crosstalk naturally also.
In the present embodiment, as shown in Figure 1, being additionally provided with filled layer 6 in groove structure 21, filled layer 6 is located at groove structure
On electron injecting layer 57 in 21.In the present embodiment, the material of filled layer 6 is ink, for example, acrylic.In the present embodiment, such as
Shown in Fig. 1 and Fig. 2,6 upper surface of filled layer is relative to organic luminous layer in the height and fringe region B of 1 upper surface of underlay substrate
54 upper surfaces are identical relative to the height of 1 upper surface of underlay substrate, and specifically, the upper surface of filled layer 6 is relative to underlay substrate 1
Upper surface height and electron injecting layer 57 in fringe region B upper surface relative to underlay substrate 1 upper surface height
It is identical.
In the present embodiment, specifically, second electrode 4 is located at electron injecting layer 57, fringe region B in sub-pixel unit P
In electron injecting layer 57 and filled layer 6 on, and cover the electron injecting layer 57 in sub-pixel unit P, in fringe region B
Electron injecting layer 57 and filled layer 6.Therefore in manufacturing process, before forming second electrode 4, by filled layer 6 by groove
Structure 21 is filled and led up and filled layer 6 is identical as the height of electron injecting layer 57 in fringe region B, is forming the second electricity to ensure that
When pole 4, uniform connection of the second electrode 4 at groove structure 21 not will cause what second electrode 4 disconnected at groove structure 21
Phenomenon.
In the present embodiment, as shown in Fig. 2, the depth S of groove structure 21 is less than or equal to the thickness H that pixel defines pattern 2.
It should be noted that the depth S that groove structure 21 is illustrated only in Fig. 2 is less than the case where pixel defines the thickness H of pattern 2, but
In the present embodiment, the depth S of groove structure 21 can also be equal to the thickness H that pixel defines pattern 2.Preferably, groove structure 21
Depth S range be 1.0 microns to 1.5 microns, the width range of groove structure 21 is 4.0 microns to 6.0 microns.So as to
When forming filled layer 6, guarantee the uniformity of filled layer 6.In order to vapor deposition formed hole injection layer 51, hole transmission layer 52,
When electronic barrier layer 53, hole blocking layer 55, electron transfer layer 56 and electron injecting layer 57, guarantee hole injection layer 51, sky
Cave transport layer 52, electronic barrier layer 53, hole blocking layer 55, electron transfer layer 56 and electron injecting layer 57 can be in groove knots
It is disconnected at structure 21, in the present embodiment, the angle α between the bottom wall and side wall of groove structure 21 is less than or equal to 90 degree.Preferably,
In the present embodiment, the angle α between the bottom wall and side wall of groove structure 21 is equal to 90 degree.In the present embodiment, as shown in Figure 1, excellent
Selection of land, the shape of the longitudinal section of groove structure 21 are rectangle.
Fig. 3 defines another structural schematic diagram of pattern for the pixel in Fig. 1, as shown in figure 3, optionally, groove structure
The shape of 21 longitudinal section can also be for arc.In the present embodiment, the shape of the longitudinal section of groove structure 21 can also be it
His shape, no longer enumerates herein.
In the present embodiment, it is preferable that first electrode 3 is anode, and second electrode 4 is cathode.
In the present embodiment, as shown in Figure 1, the oled substrate further includes insulating layer 7, tft layer (TFT) 8 and flat
Change layer (PLN) 9, wherein insulating layer 7 is located on underlay substrate 1, and tft layer 8 is located on insulating layer 7, and planarization layer 9
In on tft layer 8, pixel defining layer is located on planarization layer 9.Wherein, the material of insulating layer 7 is Kapton
(Polyimide Fi lm, referred to as：PI).
In the present embodiment, it is preferable that the material that pixel defines pattern 2 is Kapton.
In the technical solution of oled substrate provided by the present embodiment, pixel, which defines, limits sub-pixel list between pattern
Member, each pixel define and are provided with groove structure on pattern, and organic luminous layer is located in sub-pixel unit.Due to adjacent organic
Pixel between luminescent layer, which defines, is provided with groove structure on pattern, so that in the organic hair for forming adjacent different luminescent colors
When photosphere, be not likely to produce between the organic luminous layer of adjacent different luminescent colors it is overlapping, thus between reducing adjacent subpixels
Display crosstalk phenomenon, meanwhile, under low ash rank, control some organic luminous layer shine when, be not likely to produce hole or electronics
Lateral transport, to reduce the color offset phenomenon that OLED device is easy to appear under low ash rank.
Fig. 4 is a kind of structural schematic diagram for oled substrate that the utility model embodiment two provides, and Fig. 5 is pixel in Fig. 4
The structural schematic diagram of pattern and Thinfilm pattern is defined, as shown in Figure 4 and Figure 5, the structure of oled substrate provided by the present embodiment
The difference of the structure of the oled substrate provided with above-described embodiment one is：Oled substrate further includes Thinfilm pattern 10, film figure
Case 10 is located at pixel and defines the fringe region B of pattern 2 and extend to the groove structure that pixel defines pattern 2 from fringe region B
Region A where 21, organic luminous layer 5 extend on Thinfilm pattern 10 from sub-pixel unit P.
It is also not difficult to find out from Fig. 5, one end of Thinfilm pattern 10 is located at the fringe region B that pixel defines pattern 2, film figure
The pixel that the other end of case 10 is located at defines the region A where the groove structure 21 of pattern 2.
In the present embodiment, the thickness range of Thinfilm pattern 10 is 0.18 micron to 0.22 micron.Preferably, Thinfilm pattern 10
With a thickness of 0.20 micron.The width range of Thinfilm pattern 10 is 6.0 microns to 8.0 microns.
In the present embodiment, it is preferable that the material of Thinfilm pattern is ion implanted Si4+The Kapton of ion.
The description of the other structures of the oled substrate provided by the present embodiment can be found in above-described embodiment one, herein not
It repeats again.
In the technical solution of oled substrate provided by the present embodiment, pixel, which defines, limits sub-pixel list between pattern
Member, each pixel define and are provided with groove structure on pattern, and organic luminous layer is located in sub-pixel unit.Due to adjacent organic
Pixel between luminescent layer, which defines, is provided with groove structure on pattern, so that in the organic hair for forming adjacent different luminescent colors
When photosphere, be not likely to produce between the organic luminous layer of adjacent different luminescent colors it is overlapping, thus between reducing adjacent subpixels
Display crosstalk phenomenon, meanwhile, under low ash rank, control some organic luminous layer shine when, be not likely to produce hole or electronics
Lateral transport, to reduce the color offset phenomenon that OLED device is easy to appear under low ash rank.
The utility model embodiment three provides a kind of display device, the display device include the encapsulating structure that is oppositely arranged and
Oled substrate.
In the present embodiment, encapsulating structure can be glass cover-plate or multilayer film.Encapsulating structure can also be that other are suitable
Structure, will not enumerate herein.In the present embodiment, the packaged type of glass cover-plate is rigidity encapsulation, the encapsulation of multilayer film
Mode is flexible package.
Mould group layer is additionally provided in the present embodiment, on encapsulating structure, mould group layer includes but is not limited to：Polaroid, IC binding
Layer, touch control layer (Touch&Sensor), glass cover-plate etc..
In the present embodiment, oled substrate includes that oled substrate provided by above-described embodiment one or above-described embodiment two mention
The oled substrate of confession.The description of oled substrate about the present embodiment can be found in above-described embodiment one or embodiment two, herein not
It repeats again.
In the technical solution of display device provided by the present embodiment, pixel, which defines, limits sub-pixel list between pattern
Member, each pixel define and are provided with groove structure on pattern, and organic luminous layer is located in sub-pixel unit.Due to adjacent organic
Pixel between luminescent layer, which defines, is provided with groove structure on pattern, so that in the organic hair for forming adjacent different luminescent colors
When photosphere, be not likely to produce between the organic luminous layer of adjacent different luminescent colors it is overlapping, thus between reducing adjacent subpixels
Display crosstalk phenomenon, meanwhile, under low ash rank, control some organic luminous layer shine when, be not likely to produce hole or electronics
Lateral transport, to reduce the color offset phenomenon that OLED device is easy to appear under low ash rank.
Fig. 6 is a kind of flow chart for oled substrate production method that the utility model embodiment four provides, as shown in fig. 6,
The oled substrate production method includes：
Step 401 forms insulating layer on underlay substrate.
As shown in fig. 7, forming insulating layer 7 on underlay substrate 1.
Tft layer is formed on the insulating layer in step 402.
As shown in figure 8, forming tft layer 8 on insulating layer 7.
Step 403 forms planarization layer on tft layer.
As shown in figure 9, forming planarization layer 9 on tft layer 8.
Step 404 forms first electrode on planarization layer.
Specifically, step 404 includes：
Step 4041 deposits first electrode material layer on planarization layer.
As shown in Figure 10, first electrode material layer 11 is deposited on planarization layer 9.
Step 4042 is patterned technique to first electrode material layer, forms first electrode.
As shown in figure 11, technique is patterned to first electrode material layer 11, forms first electrode 3.Wherein, to the first electricity
The patterning processes that pole material layer 11 carries out include the techniques such as photoresist coating, exposure, development, etching and photoresist lift off.
Step 405 forms pixel defining layer on planarization layer, and pixel defining layer includes that multiple pixels define pattern, often
A pixel defines and is provided with groove structure on pattern, and pixel defines and limits sub-pixel unit between pattern, and first electrode is located at
In sub-pixel unit.
Specifically, step 405 includes：
Step 4051, pixel deposition defines material layer on planarization layer.
As shown in figure 12, pixel deposition defines material layer 12 on planarization layer 9.
Step 4052 defines material layer to pixel and is patterned technique, forms multiple pixels and defines pattern.
As shown in Figure 12 and Figure 13, material layer 12 is defined to pixel and is patterned technique, formed multiple pixels and define pattern
2.Wherein, defining the patterning processes that material layer 12 carries out to pixel includes：The techniques such as exposure and imaging.
Step 4053 defines pattern to pixel and is patterned technique, forms groove structure.
As shown in figure 14, specifically, by dry etching, for example, ise, defines pattern 2 to pixel and is patterned
Technique forms groove structure 21.As shown in figure 14, it is preferable that the shape of the longitudinal section of groove structure 21 is rectangle.
In the present embodiment, as shown in figure 14, pixel defines and limits sub-pixel unit P between pattern 2, and first electrode 3
In sub-pixel unit P.
In the present embodiment, optionally, as shown in fig. 15, the shape of the longitudinal section of groove structure 21 can also be arc.When
When the shape of the longitudinal section of groove structure 21 is arc, if Figure 15 B is extremely and shown in Figure 15 D, material layer 12 is defined forming pixel
Later, it can first be defined in pixel and coat a layer photoresist (PR) 13 in material layer 12, later by exposure technology in photoresist 13
On etch opening 14, groove structure 21 is then etched at the opening 14 using wet etching technique.21 shape of groove structure
Cheng Hou removes photoresist 13.As shown in fig. 15, material layer 12 finally is defined to pixel again and is patterned technique, form pixel circle
Determine pattern 2, which includes the techniques such as exposure and imaging.
Step 406 defines in pixel and forms hole injection layer on pattern and first electrode.
As shown in figure 16, formation hole injection layer 51 on pattern 2 and first electrode 3 is defined in pixel.Specifically, using opening
Formula mask plate (Open Mask) is put, pattern 2 and the first electricity are defined in pixel by the organic material vapor deposition (EV vapor deposition) under vacuum
Vapor deposition forms hole injection layer 51 on pole 3.In the present embodiment, when vapor deposition forms hole injection layer 51, partial holes implanted layer
51 disconnect automatically at groove structure 21, and into groove structure 21, rest part hole injection layer 51 is located at sub-pixel unit P
In and extend close to from sub-pixel unit P the fringe region B of sub-pixel unit P.
Step 407 forms hole transmission layer on hole injection layer.
As shown in figure 17, hole transmission layer 52 is formed on hole injection layer 51.Specifically, using Open Mask, pass through
EV is vaporized on vapor deposition on hole injection layer 51 and forms hole transmission layer 52.In the present embodiment, hole transmission layer 52 is formed in vapor deposition
When, partial holes transport layer 52 disconnects automatically at groove structure 21, empty in groove structure 21 into groove structure 21
Cave transport layer 52 is located on hole injection layer 51.Rest part hole transmission layer 52 is located at the injection of the hole in sub-pixel unit P
The fringe region B of sub-pixel unit P is extended close on layer 51 and from sub-pixel unit P.
Step 408 forms electronic barrier layer on the hole transport layer.
As shown in figure 18, electronic barrier layer 53 is formed on hole transmission layer 52.Specifically, using high-precision metal mask
Plate (Fine Metal Mask, referred to as：FMM), vapor deposition on hole transmission layer 52 is vaporized on by EV and forms electronic barrier layer 53.
In the present embodiment, when vapor deposition forms electronic barrier layer 53, part electronic barrier layer 53 disconnects automatically at groove structure 21, into
Enter in groove structure 21.In groove structure 21, electronic barrier layer 53 is located on hole transmission layer 52.Rest part electronic blocking
Extend close to sub-pixel unit P's on the hole transmission layer 52 that layer 53 is located in sub-pixel unit P and from sub-pixel unit P
Fringe region B.
Step 409 forms electroluminescence layer on electronic barrier layer.
As shown in figure 19, electroluminescence layer 54 is formed on electronic barrier layer 53.Specifically, it using FMM, is deposited by EV
Mode electroluminescence layer 54 is formed on electronic barrier layer 53.In the present embodiment, electroluminescence layer 54 is not formed in groove knot
In structure 21.But when in some embodiments, forming electroluminescence layer 54, it is understood that there may be the shadow of electroluminescence layer 54 is steaming
Shadow is disconnected at groove structure 21 with electroluminescence layer 54 when plating, into groove structure 21.
Step 410 forms hole blocking layer on electroluminescence layer.
As shown in figure 20, hole blocking layer 55 is formed on electroluminescence layer 54.Specifically, using Open Mask, pass through
EV is vaporized on vapor deposition on electroluminescence layer 54 and forms hole blocking layer 55.In the present embodiment, hole blocking layer 55 is formed in vapor deposition
When, partial holes barrier layer 55 disconnects automatically at groove structure 21, into groove structure 21.It is empty in groove structure 21
Cave barrier layer 55 is located on electronic barrier layer 53.Rest part hole blocking layer 55 is located at the electroluminescent in sub-pixel unit P
The fringe region B of sub-pixel unit P is extended close on layer 54 and from sub-pixel unit P.
Step 411 forms electron transfer layer on the hole blocking layer.
As shown in figure 21, electron transfer layer 56 is formed on hole blocking layer 55.Specifically, using Open Mask, pass through
EV is vaporized on vapor deposition on hole blocking layer 55 and forms electron transfer layer 56.In the present embodiment, electron transfer layer 56 is formed in vapor deposition
When, part electron transfer layer 56 disconnects automatically at groove structure 21, into groove structure 21.In groove structure 21, electricity
Sub- transport layer 56 is located on hole blocking layer 55.Rest part electron transfer layer 56 is located at the hole barrier in sub-pixel unit P
The fringe region B of sub-pixel unit P is extended close on layer 55 and from sub-pixel unit P.
Step 412 forms electron injecting layer on the electron transport layer.
As shown in figure 22, electron injecting layer 57 is formed on electron transfer layer 56.Specifically, using Open Mask, pass through
EV is vaporized on vapor deposition on electron transfer layer 56 and forms electron injecting layer 57.In the present embodiment, electron injecting layer 57 is formed in vapor deposition
When, part electron injecting layer 57 disconnects automatically at groove structure 21, into groove structure 21.In groove structure 21, electricity
Sub- implanted layer 57 is located on electron transfer layer 56.Rest part electron injecting layer 57 is located at the electron-transport in sub-pixel unit P
The fringe region B of sub-pixel unit P is extended close on layer 56 and from sub-pixel unit P.
Step 413 forms filled layer in groove structure.
Specifically, step 412 includes：
Step 4131 forms packing material in groove structure.
Wherein, packing material is ink, for example, acrylic.Specifically, using inkjet printing technology (Ink-Jet
Printing, referred to as：IJP packing material) is filled in groove structure 21, and is protected by the control of the viscosity to packing material
Demonstrate,prove the uniformity of filling.
Step 4132 solidifies packing material, forms filled layer.
As shown in figure 23, packing material is solidified, forms filled layer 6.Specifically, packing material is carried out ultraviolet
(UV) solidify, form filled layer 6.
Step 414 forms second electrode on filled layer and electron injecting layer.
As shown in figure 24, the electronics note in the electron injecting layer 57 and fringe region B in filled layer 6, sub-pixel unit P
Enter formation second electrode 4 on layer 57, second electrode 4 covers filled layer 6, electron injecting layer 57 and edge in sub-pixel unit P
Electron injecting layer 57 in the B of region.
Oled substrate production method provided by the present embodiment, the OLED base provided for realizing production above-described embodiment one
Plate, other about the oled substrate specifically describe reference can be made to above-described embodiment one, details are not described herein again.
In the technical solution of oled substrate production method provided by the present embodiment, pixel, which defines, limits son between pattern
Pixel unit, each pixel define and are provided with groove structure on pattern, and organic luminous layer is located in sub-pixel unit.Due to adjacent
Organic luminous layer between pixel define and be provided with groove structure on pattern so that forming adjacent different luminescent colors
When organic luminous layer, be not likely to produce between the organic luminous layer of adjacent different luminescent colors it is overlapping, to reduce adjacent son
Display crosstalk phenomenon between pixel, meanwhile, under low ash rank, control some organic luminous layer shine when, be not likely to produce hole
Or the lateral transport of electronics, to reduce the color offset phenomenon that OLED device is easy to appear under low ash rank.
Figure 29 is a kind of flow chart for oled substrate production method that the utility model embodiment five provides, such as Figure 29 institute
Show, which includes：
Step 501 is to step 504：Referring to above-described embodiment four provide oled substrate production method in step 401 to
Step 404, details are not described herein again.
Step 505, formation pixel defines pattern, Thinfilm pattern and groove structure on planarization layer.
Specifically, step 505 includes：
Step 5051, formation pixel defines material layer on planarization layer.
As shown in figure 12, pixel is formed on planarization layer 9 define material layer 12.Wherein, pixel defines material layer 12
Material is that polyimides is thin.
Step 5052 defines material layer to pixel and is patterned technique, forms pattern space.
As shown in figure 25, material layer 12 is defined to pixel and is patterned technique, form pattern space 15.
Step 5053 forms film material plies in pattern space.
As shown in figure 26, film material plies 16 are formed in pattern space 15.Wherein, the material of film material plies 16 is warp
Ion implanting Si4+The Kapton of ion.
Step 5054 defines material layer to film material plies and pixel and is patterned technique, forms Thinfilm pattern and groove
Structure.
As shown in Figure 26 and Figure 27, material layer 12 is defined to film material plies 16 and pixel and is patterned technique, formed thin
Film figure 10 and groove structure 21.Specifically, it after the exposed technique of film material plies 16, using wet etching mode, is etching
Under liquid, material layer 12 is defined to film material plies 16 and pixel and performs etching technique, wherein the etch rate of film material plies 16
Less than the etch rate that pixel defines material layer 12, Thinfilm pattern 10 and groove structure 21 as shown in figure 27 are ultimately formed.
Step 5055 defines material layer progress photoetching process to pixel, forms pixel and defines pattern.
As shown in Figure 27 and Figure 28, material layer 12 is defined to pixel and carries out photoetching process, formed pixel and define pattern 2.
Step 506 defines in first electrode, pixel and forms hole injection layer on pattern and Thinfilm pattern.
As shown in figure 4, defining pattern 2 and the formation hole injection layer 51 of Thinfilm pattern 10 in first electrode 3, pixel.
Step 507 is to step 514：Referring to above-described embodiment four provide oled substrate production method in step 407 to
Step 414, details are not described herein again.
Finally, the structure of oled substrate as shown in Figure 4 is formed.
Oled substrate production method provided in this embodiment, the OLED base provided for realizing production above-described embodiment two
Plate, the specific descriptions about the oled substrate can be found in above-described embodiment two, and details are not described herein again.
In the technical solution of oled substrate production method provided by the present embodiment, pixel, which defines, limits son between pattern
Pixel unit, each pixel define and are provided with groove structure on pattern, and organic luminous layer is located in sub-pixel unit.Due to adjacent
Organic luminous layer between pixel define and be provided with groove structure on pattern so that forming adjacent different luminescent colors
When organic luminous layer, be not likely to produce between the organic luminous layer of adjacent different luminescent colors it is overlapping, to reduce adjacent son
Display crosstalk phenomenon between pixel, meanwhile, under low ash rank, control some organic luminous layer shine when, be not likely to produce hole
Or the lateral transport of electronics, to reduce the color offset phenomenon that OLED device is easy to appear under low ash rank.
It is understood that embodiment of above is merely to illustrate that the principles of the present invention and uses exemplary
Embodiment, however the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case where the spirit and essence of utility model, various changes and modifications can be made therein, these variations and modifications are also considered as this reality
With novel protection scope.
Claims (10)
1. a kind of oled substrate, which is characterized in that pixel defining layer including underlay substrate and on the underlay substrate,
One electrode, second electrode and organic luminous layer, the organic luminous layer between the first electrode and the second electrode,
The pixel defining layer includes that multiple pixels define pattern, and each pixel, which defines, is provided with groove structure on pattern, described
Pixel defines and limits sub-pixel unit between pattern, and the organic luminous layer is located in the sub-pixel unit.
2. oled substrate according to claim 1, which is characterized in that the depth bounds of the groove structure are 1.0 microns
To 1.5 microns.
3. oled substrate according to claim 1, which is characterized in that the width range of the groove structure is 4.0 microns
To 6.0 microns.
4. oled substrate according to claim 1, which is characterized in that the folder between the bottom wall and side wall of the groove structure
Angle is less than or equal to 90 degree.
5. oled substrate according to claim 1, which is characterized in that the shape of the longitudinal section of the groove structure is rectangle
Or arc.
6. oled substrate according to claim 1, which is characterized in that the organic luminous layer is also from the sub-pixel unit
In extend close to the pixel of the sub-pixel unit and define the fringe region of pattern, the fringe region is that the pixel defines
The region in addition to the region where the groove structure of pattern.
7. oled substrate according to claim 6, which is characterized in that filled layer is provided in the groove structure, it is described
Filled layer upper surface is relative to organic luminous layer upper surface in the height and fringe region of underlay substrate upper surface relative to substrate
The height of upper surface of base plate is identical.
8. oled substrate according to claim 1, which is characterized in that further include：Thinfilm pattern, the Thinfilm pattern are located at
The pixel defines the fringe region of pattern and extends to where pixel defines the groove structure of pattern from the fringe region
Region, the fringe region are the region in addition to the region where groove structure that pixel defines pattern.
9. oled substrate according to claim 1, which is characterized in that the first electrode is located at the sub-pixel unit
In, the organic luminous layer is located in the first electrode, and the second electrode is located at the pixel and defines pattern and described have
On machine luminescent layer and the covering pixel defines pattern and the organic luminous layer.
10. a kind of display device, which is characterized in that any described including the encapsulating structure being oppositely arranged and claim 1 to 9
Oled substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820835250.0U CN208157413U (en) | 2018-05-31 | 2018-05-31 | OLED substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820835250.0U CN208157413U (en) | 2018-05-31 | 2018-05-31 | OLED substrate and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208157413U true CN208157413U (en) | 2018-11-27 |
Family
ID=64388646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820835250.0U Active CN208157413U (en) | 2018-05-31 | 2018-05-31 | OLED substrate and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208157413U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108717942A (en) * | 2018-05-31 | 2018-10-30 | 京东方科技集团股份有限公司 | Oled substrate and preparation method thereof, display device |
| CN112968051A (en) * | 2021-03-09 | 2021-06-15 | 京东方科技集团股份有限公司 | Light-emitting substrate, light-emitting device, and method and device for manufacturing light-emitting substrate |
-
2018
- 2018-05-31 CN CN201820835250.0U patent/CN208157413U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108717942A (en) * | 2018-05-31 | 2018-10-30 | 京东方科技集团股份有限公司 | Oled substrate and preparation method thereof, display device |
| CN108717942B (en) * | 2018-05-31 | 2021-11-19 | 京东方科技集团股份有限公司 | OLED substrate, manufacturing method thereof and display device |
| US11545529B2 (en) | 2018-05-31 | 2023-01-03 | Beijing Boe Technology Development Co., Ltd. | Organic light emitting diode (OLED) substrate and manufacturing method thereof, display device |
| CN112968051A (en) * | 2021-03-09 | 2021-06-15 | 京东方科技集团股份有限公司 | Light-emitting substrate, light-emitting device, and method and device for manufacturing light-emitting substrate |
| CN112968051B (en) * | 2021-03-09 | 2024-05-14 | 京东方科技集团股份有限公司 | Light-emitting substrate, light-emitting device, and method and device for manufacturing light-emitting substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108717942A (en) | Oled substrate and preparation method thereof, display device | |
| CN101064335B (en) | Organic electroluminescent device and its method of manufacture | |
| CN103545457B (en) | The manufacture method of luminescent device, array base palte, display device and luminescent device | |
| CN109599429A (en) | Display panel and its manufacturing method | |
| CN109950292A (en) | Display base plate and its manufacturing method, display device | |
| CN106505085A (en) | Transparent display and the method for manufacturing the transparent display | |
| CN206774550U (en) | A kind of display base plate and display device | |
| CN105932037A (en) | Organic electroluminescence display substrate, preparation method therefor, and display device | |
| KR20130073014A (en) | Organic light emitting panel, method of manufacturing the same and organic display device | |
| CN208157413U (en) | OLED substrate and display device | |
| CN108321175A (en) | Substrate and its manufacturing method, display device | |
| KR20130073013A (en) | Organic light emitting panel, method of manufacturing the same and organic display device | |
| CN105097830B (en) | A kind of array substrate and preparation method thereof, display panel and display device | |
| CN108258012A (en) | EL display device | |
| CN110137225A (en) | OLED display panel and preparation method thereof | |
| CN107644951A (en) | A kind of preparation method for printing OLED display screen | |
| US10734583B2 (en) | Electroluminescent substrate plate, method for manufacturing the same and display device | |
| CN109390372A (en) | Dot structure and forming method thereof, display screen | |
| CN109860239A (en) | Array substrate and preparation method thereof, display device | |
| CN108231856A (en) | Pixel defining layer, display panel and display device | |
| CN109920825A (en) | Pixel defines structure and preparation method thereof, display panel and display device | |
| CN109887961A (en) | Array substrate and preparation method thereof, display panel and display device | |
| CN109285963A (en) | A kind of organic electroluminescent display panel and preparation method thereof | |
| CN111564484A (en) | Display panel, processing method thereof and display device | |
| CN101000948B (en) | Pixel structure and organic light emitting device including the pixel structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |