CN208111415U - Rotating wafer equipment - Google Patents
Rotating wafer equipment Download PDFInfo
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- CN208111415U CN208111415U CN201820631446.8U CN201820631446U CN208111415U CN 208111415 U CN208111415 U CN 208111415U CN 201820631446 U CN201820631446 U CN 201820631446U CN 208111415 U CN208111415 U CN 208111415U
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- wafer
- etching
- rotating wafer
- roller shaft
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Abstract
The utility model provides a kind of rotating wafer equipment, controls the etch-rate uniformity of wafer, includes：Etching groove；At least two conduits are located in the etching groove, and the catheter interior transmits etching solution, and the conduit is equipped with a plurality of spray orifices being connected with the catheter interior, so that the etching liquid is sprayed via the spray orifice；At least two roller shafts, positioned at the centre of two conduits, and the roller shaft diameter of axle is located at the etching groove bottom side in parallel；Bearing is separately connected with the both ends of the roller shaft；And at least one motor, the motor is via bearing described in transmission band connection.Etching solution is sprayed in spray orifice and rotates the wafer simultaneously, makes to etch non-uniformity reduction in the wafer face.
Description
Technical field
The utility model relates to a kind of wafer equipment more particularly to a kind of rotations for the etch-rate uniformity for controlling wafer
Wafer equipment.
Background technique
Etch-rate is the rate that measurement of species is removed from crystal column surface,Wherein Δ d is that etching is thick
Degree variation angstromT is etching period, such as per minute (min).In addition, etching heterogeneity (Non-uniformity, NU)
It can be calculated by following equation, heterogeneity NU (%)=(E of alleged etchingmax-Emin)/(2Eave) × 100%.Wherein Emax
To measure maximum etch rate, EminTo measure minimum etch-rate, EaveFor mean etch rate.Etch heterogeneity (Non-
Uniformity, NU) value it is smaller, represent the etch-rate of crystal column surface any point closer to mean etch rate.
In the prior art, accommodate by the gross that a plurality of wafers, wafer are fixed in etching groove using etching groove.Etching solution
Body can be generated multiple by the gross using the material of chemical solution dissolution crystal column surface, etching liquid non-uniform distribution on wafer
The heterogeneity of several wafers is larger, causes indirectly heteropical bad.Especially for the microphone of micro electronmechanical (MEMS)
The integrated circuit of product, the wafer by the gross produced, yield and quality are unable to control in same standard value.
It therefore, is solution problem of the prior art, it is necessary to propose a kind of etch-rate uniformity of new control wafer
Rotating wafer equipment.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of rotating wafer equipment, controls
The etch-rate uniformity of wafer, the rotating wafer equipment include：Etching groove；At least two conduits, the conduit are located at
In the etching groove, the catheter interior transmits etching solution, and the conduit is connected equipped with a plurality of with the catheter interior
Spray orifice so that the etching liquid is sprayed via the spray orifice；At least two roller shafts, two roller shaft are located at described lead
The centre of pipe, and the roller shaft is located at the etching groove bottom side in parallel；Bearing is separately connected with the both ends of the roller shaft；
And at least one motor, the motor is via bearing described in transmission band connection.
In one embodiment, the rotating wafer equipment also has：A plurality of spray orifices are along the axial equal of the conduit
Even distribution, the spray orifice direction are axially perpendicular with the conduit.
In one embodiment, the roller shaft is equipped at least one card slot, and the card slot is lateral from outside the roller shaft
The axial direction in the direction and the roller shaft that extend in the roller shaft is perpendicular, and the card slot is along the axial uniform of the roller shaft
Distribution.
In one embodiment, the rotating wafer equipment also has：Groove, the groove are located at the etching groove bottom side,
The roller shaft is located in the groove, and the conduit is located at the etching trench bottom of the groove two sides.
In one embodiment, the rotating wafer equipment also has：At least one pump, the pump connect the conduit and carve
Liquid source is lost, the pump conveys the etching liquid into the conduit when opening.
In one embodiment, the rotating wafer equipment further includes the first controller, is connected with the pump, and described first
Controller controls opening or closing for the pump.
In one embodiment, the rotating wafer equipment also has：Control signal is detected and transmitted to motor sensor, control
The motor is made to turn off or on.
In one embodiment, the rotating wafer equipment further includes second controller, is connected with the motor sensor,
The second controller controls opening or closing for the motor via the motor sensor.
The utility model provides a kind of rotating wafer equipment, is opened using the motor, to be driven the wafer, simultaneously will
Pump is opened, the etching solution for spraying the spray orifice, because the etching solution can be mixed relatively under the wafer rotary state
Sufficiently, achieve the purpose that be uniformly distributed in crystal column surface, the etch-rate of any point of crystal column surface can be close to average etch speed
Rate, therefore, the pump of the utility model is opened, wafer rotates flowering structure, can specifically provide the smaller of wafer heterogeneity NU (%)
Value, and further increase the quality and yield of wafer production.
Detailed description of the invention
Fig. 1 is the etch quantity distribution map that wafer is directly immersed in etching groove by one kind.
Fig. 2A is a kind of wafer schematic diagram without spin of rotating wafer equipment.
Fig. 2 B is a kind of amount distribution map of crystal round etching without spin of rotating wafer equipment.
Fig. 3 A is the perspective view of the utility model rotating wafer equipment.
Fig. 3 B is the structure chart of the front view of the utility model rotating wafer equipment.
Fig. 4 is the structure of the side view of the utility model rotating wafer equipment.
Fig. 5 A is that the utility model pump is opened, wafer rotates lower schematic diagram.
Fig. 5 B is that the utility model pump is opened, wafer rotates lower etch quantity distribution map.
Fig. 6 is the statistical chart of the utility model non-uniformity under 13 measuring points.
Fig. 7 is the statistical chart of the utility model non-uniformity under 49 measuring points.
Reference numerals explanation
1 the 1st measuring point
2 the 2nd measuring points
3 the 3rd measuring points
4 the 4th measuring points
5 the 5th measuring points
6 the 6th measuring points
7 the 7th measuring points
8 the 8th measuring points
9 the 9th measuring points
10 the 10th measuring points
11 the 11st measuring points
12 the 12nd measuring points
13 the 13rd measuring points
14 wafers
15 roller shafts
16 bearings
17 transmission belts
18 motor sensors
19 motors
The flow direction of 20 etching solutions
21 maximum values
22 minimum values
23 medians
24 average values
25 quartiles
31 etching magnitude tables
41 non-rotating areas
42 Rotary Districts
43 pumps open an area
44 pumps close area
45 pumps open 2nd area
46 pumps open 3rd area
51 etching grooves
52 conduits
53 spray orifices
54 pumps
55 card slots
56 grooves
57 first controllers
58 second controllers
Specific embodiment
Illustrate the embodiments of the present invention by particular specific embodiment below, those skilled in the art can be by
Content disclosed in the present specification easily understands the further advantage and effect of the utility model.Fig. 1 is please referred to Fig. 7.It should be clear that
This specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to cooperate the revealed content of specification, for
Those skilled in the art understands and reads, and is not intended to limit the invention enforceable qualifications, therefore does not have technical
Essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size are not influencing the function of the invention that can be generated
Under effect and the purpose that can reach, should all still it fall in the range of disclosed technology contents obtain and can cover.Meanwhile this
The term of such as "upper", "lower", "left", "right", " centre " and " one " cited in specification, is merely convenient to the bright of narration
, rather than to limit the scope of the invention, relativeness is altered or modified, and is changing technology contents without essence
Under, when being also considered as the enforceable scope of the present invention.
As shown in Figure 1, being that wafer is directly immersed in etching when performing etching technique to wafer by a kind of rotating wafer equipment
In slot, the conduit without being provided with spray orifice sprays under etching liquid, at this time the etching spirogram of etching effect, as shown in Figure 1, its
In, the longitudinal axis is Y-axis 66, and it is the center of circle of wafer 14, the 1st measuring point 1 that the longitudinal axis, which is X-axis 99, and Y-axis and X-axis crosspoint are origins
Positioned at center location, the value of positive axis is 95 units by 0 to 14 radius of wafer, the value of negative sense axis by by 0 to 14 radius of wafer for-
95 units, different colours represent different etch quantities.2nd measuring point, 2 position, the etch quantity for measuring side are shallower.10th measuring point 10
And the 12nd measuring point 12, the etch quantity of measured side are deeper.In whole wafer 14,2 position of the 2nd measuring point is that etch quantity is poor
Measuring point (weak point).It is different by the etch quantity of the 1st measuring point 1 to the 13rd measuring point 13, wafer lower half etch quantity compared with
Deep, wafer upper half etch quantity is shallower, therefore etch-rate is also different, and different colours represent different etch quantities.At this point, described
Etch rate uniformity presents lower half circle distribution in the face of wafer 14, and the etch amount of upper half wafer is shallower.This is because in operation
In process, the wafer 14 is immersed in from top to bottom in the etching groove for filling etch liquids, the lower half portion of the wafer 14
Enter etching groove at first, when the wafer 14 leaves etching groove after the completion of etching, lower half portion is also finally from etching groove
Out.Therefore, time of the lower half portion of the wafer 14 in etching groove is longer, and etch rate also can be than the wafer
14 top half is faster.Since pump 54 closes (pump off), etching solution stops spraying, and above-mentioned effect in wafer face for carving
The influence of erosion rate uniformity plays a major role, and known to Fig. 1 in wafer face, etch rate uniformity is also poor, can generate non-equal
The excessive difference of even property NU (%).
Another rotating wafer equipment performs etching that technique is as shown in Figure 2 A, and rotating wafer equipment is to be provided with spray to wafer
Under the conduit injection etching liquid in hole, but not rotary core circle 14, the etching spirogram of etch effect, as shown in Figure 2 B.The longitudinal axis is Y-axis
66, it is the center of circle of wafer 14 that the longitudinal axis, which is X-axis 99, and Y-axis and X-axis crosspoint are origins, and the 1st measuring point 1 is located at center location,
The value of positive axis is 95 units by 0 to 14 radius of wafer, and the value of negative sense axis is different by being -95 units by 0 to 14 radius of wafer
Color represents different etch quantities.It shown in Fig. 2A, is closed in motor 19, wafer 14 stops rotating and the pump 54 is opened
In the case where (pump on), wherein the etching solution flow direction that the spray orifice 53 sprays, is by the bottom of the wafer 14
After side both ends spray orifice 53 is sprayed towards the diffusion of the center of circle of the wafer 14, then from the center of circle reflexed of the wafer 14 to the wafer
14 periphery diameter diffusion.On the left of Fig. 3 in diagram, the measuring point of wafer 14, by the 1st measuring point 1 of 14 center location of wafer
It sets, to 13 position of the 13rd measuring point of 14 circumference of wafer.It is the phase of 14 etch quantity of wafer on the left of Fig. 3 in Fig. 3 right diagram
Ying Tu.It is deeper in the etch quantity wherein close to the 10th measuring point 10 of spray orifice 53 and 12 position of the 12nd measuring point.Far from spray orifice
53 the 2nd measuring point 2 and the etch quantity of 8 position of the 8th measuring point are shallower.Since both ends spray orifice 53 is towards the wafer 14
It after center of circle diffusion sprays, then is spread from the center of circle reflexed of the wafer 14 to the periphery diameter of the wafer 14, therefore the 2nd measuring point
2 positions are the poor measuring point of etch quantity (weak point).In Fig. 2A, Fig. 2 B, the downside of rotating wafer 14 is not sprayed by conduit
Etching liquid is penetrated, therefore deep compared with the downside etch quantity of wafer 14 in Fig. 1, but there are different etch rate distributions on same wafer 14,
Etch rate uniformity is also poor.
Above two rotating wafer equipment is all poor in the etch rate uniformity for performing etching technique to wafer, therefore real
A kind of rotating wafer equipment is provided with novel, to improve wafer etch rate uniformity.
Shown in Fig. 3 A, Fig. 3 B and Fig. 4, Fig. 3 A Fig. 3 B is the utility model three-dimensional structure diagram, corresponding front view, sheet
One embodiment of utility model provides a kind of rotating wafer equipment, and the rotating wafer equipment includes：Etching groove 51 has at least one
A wafer 14 is to be placed in the etching groove 51 in bulk；At least two conduits 52, the conduit 52 are located at the etching groove
In 51, the 52 internal transmission etching liquid of conduit, the conduit 52 is equipped with a plurality of spray orifices 53 being connected with inside it,
So that the etching liquid is sprayed via the spray orifice 53；At least two roller shafts 15, the roller shaft 15 are located at the conduit
Centre, and the roller shaft 15 in parallel be located at 51 bottom side of etching groove；Bearing 16, the bearing and the roller shaft 15
Both ends are separately connected；And at least one motor 19, the motor 19 is via bearing described in transmission band connection.
In one embodiment, a plurality of spray orifices are uniformly distributed along the axial direction of the conduit, the spray orifice 53 towards with
The conduit 52 is axial perpendicular.
In one embodiment, the roller shaft 15 is equipped at least one card slot 55, and the card slot 55 is from the roller shaft
The axial direction in the direction and the roller shaft 15 that extend outside 15 in the lateral roller shaft 15 is perpendicular, and the card slot 55 is along described
The axial direction of roller shaft 15 is uniformly distributed.
In one embodiment, the rotating wafer equipment also has：Groove 56, the groove 56 are located at the etching
51 bottom side of slot；The roller shaft 15 is located in the groove 56, and the conduit 52 is located at the quarter of 56 two sides of groove
Lose 51 bottom of slot.
In an embodiment of the present invention, shown in Fig. 4, the plane of the wafer 14 is perpendicular to two roller shafts 15
The diameter of axle, in one embodiment, the card slot 55 engage the circumferential edges of an at least wafer 14, the plane of the wafer 14 perpendicular to
The diameter of axle of the roller shaft 15.The etching solution flow direction that the spray orifice 53 sprays, is by the bottom side two of the wafer 14
After holding spray orifice 53 to spray towards the diffusion of the center of circle of the wafer 14, then from the center of circle reflexed of the wafer 14 to the wafer 14
Circumferential edges diffusion.The utility model is driven the transmission belt 17 via motor 19, then is driven institute via the transmission belt 17
Bearing 16 is stated, and wafer 14 will be rotated around the center of circle of wafer 14 under the roller shaft 15 rotation.
In an embodiment of the present invention, there is at least one pump (pump) 54, the 54 connection conduit 52 of pump with
Etching liquid source, the pump convey the etching liquid into the conduit when opening.The pump 54 closes (pump off) and controls institute
It states the stopping of spray orifice 53 and sprays etching solution or 54 unlatching (pump on) control of the pump ejection of spray orifices 53 etching solution.This reality
With in a novel embodiment, the rotating wafer equipment further includes the first controller 57, is connected with the pump 54, and described first
Controller 57 controls opening or closing for the pump 54.
In an embodiment of the present invention, there is motor sensor 18, detect and transmit control signal, control the motor
19 closings/control motor 19 is opened.When motor 19 is closed, wafer 14 is not rotated around the center of circle of wafer 14.Motor 19 is opened
When, wafer 14 is rotated around the center of circle of wafer 14.In an embodiment of the present invention, the rotating wafer equipment further includes the second control
Device processed is connected with the motor sensor, and the second controller controls opening for the motor via the motor sensor
It opens or closes.
Shown in Fig. 5 A and Fig. 5 B, in an embodiment, the rotating wafer equipment is opened in motor 19, and wafer 14 revolves
Turn and it is described pump 54 open (pump on) in the case where, be 14 rotation figure of wafer shown in Fig. 5 A.It is Fig. 5 A shown in Fig. 5 B
The corresponding figure of 14 etch quantity of wafer, the longitudinal axis are Y-axis 66, and the longitudinal axis is X-axis 99, and Y-axis and X-axis crosspoint are origins, are brilliant
The center of circle of circle 14, the 1st measuring point 1 are located at center location, are all by 0 to wafer radius with the value of positive axis shown in Fig. 5 B and Fig. 5 B
95 units, the value of negative sense axis is by being -95 units by 0 to wafer radius.Due to the turning effort of the wafer 14, in addition to abundant
Outside the etching solution for mixing 14 surface of wafer, and make the 14 surface any amount point position of wafer, is rotated via wafer, with
The etching solution that spray orifice 53 sprays recycles mean exposure.Pump 54 is opened under (pump on), any measuring point in 14 surface of wafer
The etching solution abundance of position is uniform, therefore etch-rate is close in the face of the wafer 14,14 surface any point position of wafer
Etch quantity it is close, that is, etch-rate and average value are close.Shown in Fig. 5 B, magnitude table 31 is etched, is by etch quantity depthIt arrivesCompared to the etch quantity depth profile of Fig. 1 and Fig. 2A, Fig. 2 B, opened in motor 19,
In the case that the rotation of wafer 14 and the pump 54 open (pump on), Fig. 5 B etch quantity depth profile is more uniform.
It is the statistical chart of the utility model non-uniformity under 13 measuring points shown in Fig. 6.It is practical new for this shown in Fig. 7
The statistical chart of type non-uniformity under 49 measuring points.Shown in Fig. 6 and Fig. 7, the wafer in left side is non-Rotary District 41, right side
Wafer is Rotary District 42.In non-rotating area 41, motor 19 is closed, and wafer 14 does not rotate.Rotary District 42, motor 19 are opened, brilliant
14 rotation of circle.To right side on the left of statistical chart shown in Fig. 6, be sequentially pump opens an area 43, pump closes area 33, pump opens two areas 45,
Pump opens three areas 46.It is sequentially that pump opens an area 43, pump closes area 44, pump opens 2nd area to right side on the left of statistical chart shown in Fig. 7
45。
Shown in Fig. 6 and Fig. 7, pump opens an area 43, refers to basic process (baseline, BL), that is, unmodified original
Basic process pumps 54 and opens (pump on) and rotate the process conditions of (No rotate) without wafer 14, pump opens an area
43 embodiment is that 12 liters of etching solution per minute is ejected into etching groove 51.It is that pump 54 is closed that pump, which closes area 44, etching
Liquid stopping is ejected into etching groove 51.It is Rotary District 42 that pump, which opens two areas 45, wherein an embodiment is 7 liters of erosion per minute
Liquid is carved to be ejected into etching groove 51.It is Rotary District 42 that pump, which opens three areas 46, shown in Fig. 6, wherein an embodiment is per minute 13 public
The etching solution risen is ejected into etching groove 51.Shown in Fig. 6 and Fig. 7, in statistical chart, etch-rate includes that upper horizontal line represents
Maximum value 21, lower horizontal line represent minimum value 22, the point outside upper and lower horizontal line represents median 23, average value as abnormal point, medium line
24, wherein, lower edge respectively represents quartile 25 on day word frame.Shown in Fig. 6, in statistical chart, pump opens the maximum value 21 in two areas 45
And distance is minimum between minimum value 22, corresponding average value 24 is also small, therefore available lesser etching heterogeneity
(Non-uniformity, NU), the i.e. regular monitoring by false piece to board etch rate, the heterogeneity of etch-rate
(Non-uniformity, NU), NU (%), preferably, can be<10%.Pump opens the maximum value 21 and minimum in three areas 46
Distance is big between value 22, but corresponding average value 24 is also big, therefore heterogeneity (Non-uniformity, NU), NU (%) are
Rotary District 42 is small compared to area 41 non-rotating on the left of Fig. 6.Shown in Fig. 7, heterogeneity (Non-uniformity, NU), NU (%),
It is also that Rotary District 42 is small compared to area 41 non-rotating on the left of Fig. 6.
In conclusion the utility model, opens an area 43 and non-rotating area 41 in addition to may operate in pump.This is practical new
Type can also operate and close area 44 and non-rotating area 41 in pump.In addition, the utility model, may operate in etch quantity depth
The more uniform opereating specification of distribution map, that is, open two areas 45, pump two areas 45 of unlatching and Rotary District 42 in pump.Fig. 6 and Fig. 7
Under the statistics of shown different operation range, the utility model, pump 54 opens lower rotating wafer 14, and the etching solution can be filled compared with mixing
Point, achieve the purpose that be uniformly distributed in 14 surface of wafer, and in the heterogeneity (Non- for reducing etch-rate
Uniformity, NU (%)) in effect, there is significant improvement.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (8)
1. a kind of rotating wafer equipment controls the etch-rate uniformity of wafer, which is characterized in that the rotating wafer equipment packet
Contain：
Etching groove；
At least two conduits, the conduit are located in the etching groove, and the catheter interior transmits etching solution, set on the conduit
There are a plurality of spray orifices being connected with the catheter interior, so that the etching liquid is sprayed via the spray orifice；
At least two roller shafts, the roller shaft is located at the centre of the conduit, and the roller shaft is located at the etching in parallel
Slot bottom side；
Bearing is separately connected with the both ends of the roller shaft；And
At least one motor, the motor is via bearing described in transmission band connection.
2. rotating wafer equipment according to claim 1, which is characterized in that axis of a plurality of spray orifices along the conduit
To being uniformly distributed, the spray orifice direction is axially perpendicular with the conduit.
3. rotating wafer equipment according to claim 1, which is characterized in that the roller shaft is equipped at least one card
Slot, the direction that the card slot extends in the lateral roller shaft from outside the roller shaft and the axial direction of the roller shaft are perpendicular,
The card slot is uniformly distributed along the axial direction of the roller shaft.
4. rotating wafer equipment according to claim 1, which is characterized in that the rotating wafer equipment also has：Groove, institute
It states groove and is located at the etching groove bottom side；The roller shaft is located in the groove, and the conduit is located at the groove two sides
The etching trench bottom.
5. rotating wafer equipment according to claim 1, which is characterized in that the rotating wafer equipment also has：
At least one pump, the pump connects the conduit and etching liquid source, when the pump is opened into the conduit described in conveying
Etching liquid.
6. rotating wafer equipment according to claim 5, which is characterized in that the rotating wafer equipment further includes the first control
Device processed is connected with the pump, and first controller controls opening or closing for the pump.
7. rotating wafer equipment according to claim 1, which is characterized in that the rotating wafer equipment also has：
Control signal is detected and transmitted to motor sensor, controls the motor and turns off or on.
8. rotating wafer equipment according to claim 7, which is characterized in that the rotating wafer equipment further includes the second control
Device processed is connected with the motor sensor, and the second controller controls opening for the motor via the motor sensor
It opens or closes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820631446.8U CN208111415U (en) | 2018-04-28 | 2018-04-28 | Rotating wafer equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820631446.8U CN208111415U (en) | 2018-04-28 | 2018-04-28 | Rotating wafer equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208111415U true CN208111415U (en) | 2018-11-16 |
Family
ID=64114564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820631446.8U Active CN208111415U (en) | 2018-04-28 | 2018-04-28 | Rotating wafer equipment |
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| CN (1) | CN208111415U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109712914A (en) * | 2018-12-26 | 2019-05-03 | 中芯集成电路（宁波）有限公司 | A kind of wet etching chemical tank |
| CN110620066A (en) * | 2019-09-06 | 2019-12-27 | 上海华力集成电路制造有限公司 | Groove type wet etching machine table and method for performing wet etching by using same |
-
2018
- 2018-04-28 CN CN201820631446.8U patent/CN208111415U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109712914A (en) * | 2018-12-26 | 2019-05-03 | 中芯集成电路（宁波）有限公司 | A kind of wet etching chemical tank |
| CN110620066A (en) * | 2019-09-06 | 2019-12-27 | 上海华力集成电路制造有限公司 | Groove type wet etching machine table and method for performing wet etching by using same |
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