CN208078026U - Silicon substrate radio frequency capacitance - Google Patents
Silicon substrate radio frequency capacitance Download PDFInfo
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- CN208078026U CN208078026U CN201820291939.1U CN201820291939U CN208078026U CN 208078026 U CN208078026 U CN 208078026U CN 201820291939 U CN201820291939 U CN 201820291939U CN 208078026 U CN208078026 U CN 208078026U
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Abstract
A kind of silicon substrate radio frequency capacitance, including silicon-based substrate, the interior silicon-based substrate includes cavity, and the side of the cavity is siliceous film, and the inner wall of cavity does not have the gap being bonded between various substrates structure.Solve existing silicon substrate radio frequency capacitance cost of manufacture height, required precision height, the problem of mechanical strength deficiency.
Description
Technical field
The utility model is related to electronic component design field more particularly to a kind of silicon substrate radio frequency capacitances.
Background technology
Wireless communication technique is one of technology with the fastest developing speed in IT field in recent decades, and radio circuit is in nothing
Play the role of in line communication vital.With CMOS (Complementary Metal Oxide
Semiconductor) the tremendous development of technology, the cost that electronic device is prepared based on CMOS technology have been greatly reduced.It utilizes
CMOS integrated techniques prepare radio circuit, can not only improve integrated level, reduce circuit board and equipment volume, more can be significantly
Reduce manufacturing cost.With very high application and commercial value.
However in traditional cmos process, silicon substrate and the isolation of trap technique are used, this is unfavorable for radio-frequency devices especially
It is the work of passive radio frequency device.The substrate of low-resistivity often brings the influences such as electric leakage, signal decaying, electromagnetic signal crosstalk.
And its higher dielectric constant often leads to many unnecessary parasitic capacitances, influences the craftmanship of radio circuit.Capacitance member
The capacity cell that the quality of part plays the role of vital, traditional silicon substrate to entire radio circuit and prepared by trap doping,
Often there is larger parasitic capacitance in it, to be easy to cause larger capacity loss, reduce the Q of capacitance between silicon substrate
Value.Based on the above reason, a kind of parasitic capacitance that can effectively reduce substrate is provided, reduces capacity loss, improves capacitance Q values
Radio frequency capacity cell based on silicon-on-insulator substrate and preparation method thereof is necessary.
In current radio frequency capacity cell based on silicon-on-insulator substrate and preparation method thereof, which uses metal-
Insulator-metal structure prepares radio frequency capacitance, and the both sides metal electrode of capacitance is all directly covered by external insulation, at bottom crown
There are air gap at one between silicon-based substrate, can be isolated with silicon-based substrate, effectively realizing bottom crown boundary is
Zero impedance, therefore loss and the cross-interference issue of radiofrequency signal can be reduced.
But the preparation method used in current technology is complex, as needed to use two pieces in patent CN105895507A
Substrate carries out bonding packaging, to obtain the cavity structure of capacitance bottom crown.Bonding technology prepare it is more demanding, in the preparation, key
The condition for closing technique is more stringent, it is necessary to which the bond energy for opening interfacial molecular ensures that two kinds of materials of bonding have the heat being close
The coefficient of expansion can be only achieved preferable bonding effect.In addition, the surface roughness of two pieces of substrates of bonding technology pair also have it is higher
It is required that theoretically, can all influence bonding effect when roughness is excessive and the particle more than or equal to 1um is contained on surface.It is bonded work
Good effect is not achieved in skill, and the radio frequency capacitance structure can be made to have poor mechanical performance, in use anti-vibration
Poor performance.In addition, radio frequency electrical hold pole plate cavity structure prepare it is complex.The formation of the cavity structure must use two pieces
Substrate, which carries out bonding packaging, can just be successfully prepared.In the preparation, substrate must be thinned as far as possible, and this method cost is higher, no
Conducive to the promotion of yield rate.The preparation method makes structure preparation process complex, and yield rate is not high, and increases into
This.Therefore it needs to propose that a kind of effective preparation method solves the above problems.
Invention content
In view of the deficiency of above-mentioned current technology, it is desirable to provide a kind of novel silicon substrate radio frequency capacitance and preparation method solve
Existing silicon substrate radio frequency capacitance cost of manufacture is high, required precision is high, the problem of mechanical strength deficiency.
To achieve the above object, the utility model provides a kind of silicon substrate radio frequency capacitance, including silicon-based substrate, the silicon substrate
Include cavity in substrate, the side of the cavity is siliceous film, and the inner wall of cavity does not have the seam being bonded between various substrates structure
Gap.
Further, the insulating layer is silica, silicon nitride or silica silicon nitride composite material.
Preferably, the lower electrode or the composite layer that extremely transition metal layer and the high metal layer of conductivity are constituted is powered on,
Transition metal is molybdenum Mo, titanium Ti, tantalum Ta, Mo-Nd metal, the preferable metal of conductivity such as aluminium Al, gold Au, silver Ag or copper Cu.
Optionally, the dielectric layer is a kind of material or more in silica, silicon nitride, alundum (Al2O3) and zinc oxide
Kind Material cladding.
Further, the siliceous film is located at cavity upper surface, is made when by preparing cavity.
It is different from the prior art, it is tight to surface roughness requirements that above-mentioned silicon substrate radio frequency electrical Junker takes traditional bonding technology
Lattice, using the high-cost feature of two pieces of substrate fabrications, the radio frequency capacitance that the utility model makes not only has Q values high, but also
The influence that substrate interferes radiofrequency signal can be reduced.
Description of the drawings
Fig. 1 is the silicon substrate radio frequency capacitance organigram described in specific implementation mode；
Fig. 2 is the preparation method flow chart described in specific implementation mode；
Fig. 3 is the deep hole array simplified schematic diagram described in specific implementation mode.
Reference sign：
1, silicon-based substrate；
2, cavity；
3, insulating layer；
4, lower electrode；
5, dielectric layer；
6, top electrode；
7, protective layer；
8, top electrode exit；
9, lower electrode leads to client.
Specific implementation mode
For the technology contents of technical solution, construction feature, the objects and the effects are described in detail, below in conjunction with specific reality
It applies example and attached drawing is coordinated to be explained in detail.
It is a kind of silicon substrate radio frequency capacitance, including silicon-based substrate 1, the silicon-based substrate in embodiment shown in please referring to Fig.1
Include cavity 2 in 1, the side of the cavity 2 is siliceous film, is provided with absolutely on the outside of siliceous film described in the silicon-based substrate
Edge layer 3 is disposed with lower electrode 4, dielectric layer 5 and top electrode 6 on insulating layer.The sky of the silicon substrate radio frequency capacitance of the utility model
Chamber design in silicon-based substrate, positioned at capacitance metal bottom crown lower cavity structure can reduce substrate caused by parasitic capacitance,
Enable to the loss of signal smaller of radio frequency capacitance.Cavity is directly designed in the inside of silicon-based substrate, and wherein at least side is silicon
The concrete structure of matter film, the inner wall of cavity does not have the gap of different silicon-based substrate bondings, this is because our radio frequency capacitance
In, it is made when the siliceous film is by preparing cavity.Cavity structure is imbedded among substrate, formed with substrate it is integrated, this
Sample so that entire radio frequency capacitance when in use stablize by cavity structure, and performance is good.
In a further embodiment, the insulating layer is silica, silicon nitride or silica silicon nitride composite material.It should
Layer is held positioned at radio frequency electrical between pole plate and silicon base, can be collectively referred to as supporting layer with above-mentioned siliceous film portion, be played support
The effect of capacitance.2 structure of cavity is formed between the layer and silicon base simultaneously so that be isolated between capacitance and silicon base.Insulating layer
Another effect be to improve the surface roughness properties of siliceous thin layer formed after annealing process.The material of insulating layer can be silicon with
The film that silica, silicon nitride or other composite material films are constituted.But the film contacted with capacitance bottom crown on supporting layer
It must be the film with insulation performance.
In other preferred embodiments, the lower electrode 4 or top electrode 6 are transition metal layer and the high metal layer of conductivity
The composite layer of composition, transition metal are molybdenum Mo, titanium Ti, tantalum Ta, Mo-Nd metal, and the high metal of conductivity is aluminium Al, gold Au, silver
Ag or copper Cu.Lower electrode and the input/output terminal that top electrode is mainly radiofrequency signal.Lower electrode may be contained within supporting with top electrode
Layer top.The technique effect of extraction electrode is played, the lower electrode can also be with horizontal arrangement above entire supporting layer
The width of electrode as shown in Figure 1 is less than the width of supporting layer, then dielectric layer and top electrode are arranged on the bottom electrode, optional
Embodiment in, the dielectric layer 5 be silica, silicon nitride, alundum (Al2O3) and zinc oxide in a kind of material or a variety of
From Material cladding.It can preferably achieve the effect that the upper bottom crown of isolation, stablize capacitance.
In order to preferably extend the service life of our radio frequency capacitances, our capacitance further includes designing as follows, including protect
Sheath 7, protective layer 7 are in the outermost film layer of radio frequency capacitance, this is placed on the top of top crown, plays protection cap radio frequency electrical
The effect of appearance.The material of this layer is the composite layer of silica, silicon nitride or silica and silicon nitride composition, which can
Capacitance is set to completely cut off with external environment.By design protection layer 7, can play a good protective effect.
In the embodiment that some are simplified, above-mentioned silicon substrate radio frequency capacitance can produce in the following way：
1) substrate is provided
In step 1, the silicon-based substrate uses monocrystalline silicon silicon chip or silicon-on-insulator (SOI) chip.
2) supporting layer is prepared on the substrate described in step 1；
When in step 2, using monocrystalline silicon or SOI wafer, a kind of nano junction of array arrangement is prepared in the above first
It is configured the structure of shape.The structure prepares the larger nanostructure shape of depth-to-width ratio using the method for dry etching, then should
Array is made annealing treatment, and certain annealing conditions is arranged, the surface molecular of the nano-structure array structure may make to move
It is dynamic, enabling to form a kind of cavity structure.It is that one layer of thin layer is constituted by silicon above the cavity structure.It is above the cavity
Silicon thin layer above prepare a layer insulating, the silicon membrane layer above the insulating layer and cavity constitutes the supporting layer structure.
3) lower electrode of the thin metal layer as radio frequency capacitance is prepared on the supporting layer described in 2
In step 3), the thin metal layer method of electrode as under that prepared on supporting layer is：Using physics or
The method of chemistry deposits one layer of certain thickness metal molybdenum layer on supporting layer, this layer of metal is as adhesion layer, then viscous
One layer of metallic aluminum with good conductivity is prepared on attached layer, one layer of molybdenum is then prepared in aluminum metal again, by Mo-Al-Mo
Bottom crown of the metal composite layer of composition as capacitance.The capacitance bottom crown by transition metal and well conducting common group of metal
At.
4) one layer of dielectric layer is prepared on the capacitor lower electrode described in 3
In step 4), a layer insulating is prepared on the electrode bottom crown as the dielectric layer inside capacitance：Using
Method physically or chemically deposits one layer of silicon nitride layer as dielectric layer in capacitance bottom crown.The dielectric layer generally selects high dielectric
The thin-film material of constant, the performance of this layer influence the performance of this radio frequency capacitance.
5) capacitance top crown is prepared on the dielectric layer described in 4
Top crown of the one layer of metal layer as capacitance is prepared in step 5), on the dielectric layer：This layer of metal and step
Preparation method described in rapid 3 is identical, one layer and the preferable transition metal molybdenum of dielectric layer adhesiveness is first prepared on dielectric layer, then
One layer of metallic aluminum with good conductivity is prepared again, covers the composition metal that electrode is made of Mo-Al.
6) protective layer is prepared on the top crown described in 5
In step 6), layer protective layer is prepared on the capacitance top crown：Using method physically or chemically upper
Layer protective layer is prepared on pole plate so that the radio frequency capacitance is isolated with external environment, is played a good protective effect.
Radio frequency capacitance prepared by the utility model is compatible with CMOS technology, and the radio frequency capacitance of preparation can efficiently reduce lining
Influence of the bottom to capacitance greatly improves the Q values of radio frequency capacitance.
Following embodiment combination Fig. 2, we will introduce a kind of silicon substrate radio frequency capacitor fabrication method, include the following steps, accurate
Standby silicon-based substrate, the nano-structure array for the specific shape that S100 makes in the silicon-based substrate, the utility model is using wet
Method etches or the method for dry etching prepares the nano-structure array with certain depth-to-width ratio (H/W), and S102 carries out certain item
Annealing under part makes the nano-structure array of specific morphology form the cavity structure buried in the substrate, cavity structure
Top constitutes one layer of silicon thin layer, and S104 prepares a layer insulating above the silicon thin layer, and S106 just continues on which insulating layer
Prepare lower electrode of the thin metal layer as radio frequency capacitance；One layer of dielectric layer is prepared on the bottom electrode；One layer is prepared on dielectric layer
Metal layer is as top electrode.
Specifically, following steps are carried out in the embodiment shown in Figure 2, using ordinary silicon chip as substrate.First, to this
Substrate is cleaned, and ensures surface cleaning.
S100 makes the porous nanometer structure array with certain depth-to-width ratio (H/W) in the silicon-based substrate, general next
It says, which needs to be more than 1.Specifically, dry etching can be used to prepare the nano junction with certain depth-to-width ratio in we
Structure array, the wherein area of nano-structure array are determined according to required radio frequency capacity area.Specific method can be as follows,
First, one layer of silicon oxide layer of chemical vapor deposition is used in substrate surface, as etch-protecting layer.Secondly, using photoetching process
Prepare the shape of nanostructure on substrate, the nano-structure array can shape as shown in Figure 3 be designed as multiple circular hole battle arrays
The nano-structure array of row or other shapes.In lithographic process steps the thickness of photoresist want it is sufficiently thick 1~5 micron it
Between.Then, exposed region after photoetching process is performed etching using dry etching, etches into certain depth.Dry method
In etching process, photoresist and silicon oxide layer are as barrier layer, the depth of the thickness on the barrier layer and designed deep hole array
It is related, different thickness is chosen according to different depth.The depth-to-width ratio H/W of deep hole array in the technique is deep between 1~50
Wide bigger than the support layer thickness eventually formed more greatly, structural strength is higher.On the other hand blocked up supporting layer can reduce radio frequency
The high q-factor characteristic of capacitance.So when manufacturing nano-structure array, circle can be used in cross-sectional shape.It can certainly set
It is calculated as rectangle or other polygons.In the preferred embodiment of the utility model, using circular array, array is arranged according to the period
It arranges, for the spacing between Kong Yukong between D~2D, D is the diameter of aperture.The pitch is smaller, forms the probability of cavity structure
It is higher, while the selection of aperture D cannot be excessive, between 0.1~10 micron.In addition, the area of the array should penetrating than design
The area of frequency capacitance is big, and general range is between the 1%~60% of original area.
After the completion of etching, barrier layer is removed using the method for wet etching so that the nano array structure of specific morphology is aobvious
It shows to come.Carry out step S102 made annealing treatment, by the nano-structure array of the specific morphology be placed in high-temperature annealing furnace into
Row annealing.When annealing, ensure to carry out in the environment of nitrogen or other protective gas, the gas of protection should be ensured that cannot
It is enough to react with silicon-based substrate.Annealing temperature maintains 2~8 hours time between 500~1200 DEG C.At high temperature, special
Molecule in the nano-structure array for the looks that shape can obtain enough molecule activation energy, and under higher activation energy, molecule can produce
The migration for jump of living, have compared with overactivity can molecule always towards the local shifting having in nano-structure array compared with low-activation energy
It is dynamic, it is physical change in the whole process, is not related to chemically reacting.After the annealing of specified conditions, it can serve as a contrast
Bottom and surface layer form a cavity structure, and the structure is as shown in Figure 2.In the cavity inside, be filled with protective gas, cavity it is upper
Surface side forms one layer of siliceous laminate structure.The cavity is completely buried among silicon-based substrate, has good sealing characteristics.
Effectively substrate and supporting layer can be isolated for cavity structure, can effectively reduce the ghost effect of substrate and right
The influence of radiofrequency signal.
On the substrat structure prepared in above-mentioned steps, continues step S104 and prepare one layer above the silicon thin layer
Insulating layer.The insulating layer is the layer of silicon dioxide layer prepared using the method for chemical vapor deposition, the layer and cavity knot
The silicon thin layer of the upper surface of structure constitutes a kind of supporting layer.The rough surface that this layer of silicon dioxide layer can improve siliceous film is special
Property, provide preferable surface characteristic for the preparation of other thin layers.
We also carry out step S106 and just continue the lower electrode for preparing thin metal layer as radio frequency capacitance on which insulating layer；
One layer of dielectric layer is prepared on the bottom electrode；One layer of metal layer is prepared on dielectric layer as top electrode.It is made in supporting layer structure
The bottom crown of standby radio frequency capacitance.First, support layer surface is cleaned, to ensure enough cleanliness factors.Secondly, using magnetic control
The method of sputtering prepares one layer of metal adhesion layers in supporting layer upper surface, in the utility model using molybdenum as metal with it is exhausted
Transition zone between edge layer.Then one layer of aluminum metal layer is prepared using the method for magnetron sputtering on Mo layer, finally existed again
One layer of metal molybdenum layer is prepared on metallic aluminum, this layer is as the transition zone between lower electrode and dielectric layer.Transition zone in the step
The thickness of metal is between 1~1000 Ethylmercurichlorendimide.Then filled media of the one layer of dielectric layer as capacitance is prepared on bottom crown again.It adopts
Chemical vapour deposition technique is used to prepare one layer of silicon nitride film layer as the dielectric layer of radio frequency capacitance.It designs, fits according to capacitor's capacity
When the thickness for choosing this layer.Top electrode is prepared on dielectric layer again.One layer is prepared on dielectric layer using the method for magnetron sputtering
Mo layer is as adhesion layer, and the thickness control of this layer is between 1~1000 Ethylmercurichlorendimide.Then one layer of metallic aluminium is prepared on the layer
Layer has top electrode of the complex metal layer that molybdenum and aluminium are constituted as capacitance.Layer protective layer structure is finally prepared in top electrode.
One layer of silicon oxide layer conduct, the protective layer of entire radio frequency capacitance are prepared using chemical vapor deposition.After prepared by this layer of structure, need
To carrying out windowing at above-mentioned upper/lower electrode, metal lead wire is carried out.
The utility model is by preparing the nano-structure array of specific morphology, at high temperature anakmetomeres in nanostructure
Gradually migration causes the pattern of nanostructure to change, and ultimately forms the closed cavity structure being buried in silicon-based substrate, by
It can be formed with substrate integrated in the cavity that this kind of nanostructure is constituted, structural strength can be greatly promoted, without considering two
Influence of the materials variances of group silicon-based substrate to yield rate, without risking the insufficient risk of mechanical performance in bonding process.
In the embodiment shown in fig. 1, the silicon substrate radio frequency capacitance designed by the above method is illustrated；Including substrate 1,
Build cavity 2, supporting layer 3, lower electrode 4, dielectric layer 5, top electrode 6, protective layer 7：
Ordinary silicon chip can be used as silicon-based substrate in the substrate 1, and all semiconducter process are in silicon base
Upper progress.
The build cavity structure 2, within substrate, top is the supporting layer 3, which can will serve as a contrast
Bottom is isolated with supporting layer.
The supporting layer 3 is film support layer, which is located at radio frequency electrical and holds between pole plate and silicon base, plays support
The effect of capacitance.Cavity structure is formed between the layer and silicon base so that be isolated between capacitance and silicon base simultaneously.Supporting layer
Material can be the film that silicon is constituted with silica, silicon nitride or other composite material films.But on supporting layer under capacitance
The film of pole plate contact must be the film for having insulation performance.
The lower electrode 4 is the lower electrode plate of radio frequency capacitance, and the predominantly input of radiofrequency signal inputs outlet.The layer system
For above supporting layer, insulating layer is prepared on it.The layer material is made of the high metal layer of transition metal layer and conductivity
Composite layer, transition metal can be molybdenum Mo, titanium Ti, and the metal layers such as tantalum Ta, Mo-Nd, the preferable metal of conductivity can be aluminium
Al, golden Au, silver-colored Ag, copper Cu etc. metals.
For the dielectric layer 5 between the two-plate up and down of radio frequency capacitance, the material of this layer can be silica, nitrogen
SiClx, alundum (Al2O3), the composite construction of the oxide semiconductors such as zinc oxide either several insulating layers, such as silica and nitrogen
The composite film layer that SiClx is constituted.
The top crown 6 is another electrode of radio frequency capacitance, and the electrode is identical as bottom crown, by transition metal layer and is led
Electrically good metal layer is constituted.
The protective layer 7 is in the outermost film layer of radio frequency capacitance, this layer plays protection as the top of top crown
The effect of lid radio frequency capacitance.The material of this layer is the composite layer of silica, silicon nitride or silica and silicon nitride composition,
The layer can be such that capacitance completely cuts off with external environment.
The radio frequency capacitance of the utility model uses MIM (metal-insulator-metal) structure, while by the gold of capacitance
It is isolated between subordinate's pole plate and silicon-based substrate, forms an air type cavity structure between silicon-based substrate and supporting layer to subtract
The parasitic capacitance of few substrate so that the loss of signal smaller of radio frequency capacitance.
It should be noted that although the various embodiments described above have been described herein, it is not intended to limit
The scope of patent protection of the utility model.Therefore, the innovative idea based on the utility model carries out embodiment described herein
Change and modification or equivalent structure or equivalent flow shift made based on the specification and figures of the utility model, directly
Or above technical scheme is used in other related technical areas indirectly, it is included in the patent protection model of the utility model
Within enclosing.
Claims (5)
1. a kind of silicon substrate radio frequency capacitance, which is characterized in that including silicon-based substrate, including cavity, the sky in the silicon-based substrate
The side of chamber is siliceous film, and the inner wall of cavity does not have the gap being bonded between various substrates structure.
2. silicon substrate radio frequency capacitance according to claim 1, which is characterized in that outside siliceous film described in the silicon-based substrate
Side is provided with insulating layer, and lower electrode, dielectric layer and top electrode are disposed on insulating layer.
3. silicon substrate radio frequency capacitance according to claim 2, which is characterized in that the insulating layer be silica, silicon nitride or
Silica silicon nitride composite material.
4. silicon substrate radio frequency capacitance according to claim 2, which is characterized in that the lower electrode powers on extremely transition metal
The composite layer of layer and the high metal layer composition of conductivity, transition metal is molybdenum Mo, titanium Ti, tantalum Ta, Mo-Nd metal, and conductivity is done
Metal be aluminium Al, gold Au, silver Ag or copper Cu.
5. silicon substrate radio frequency capacitance according to claim 2, which is characterized in that the dielectric layer be silica, silicon nitride,
A kind of material or a variety of from Material cladding in alundum (Al2O3) and zinc oxide.
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| CN201820291939.1U CN208078026U (en) | 2018-03-02 | 2018-03-02 | Silicon substrate radio frequency capacitance |
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| CN201820291939.1U CN208078026U (en) | 2018-03-02 | 2018-03-02 | Silicon substrate radio frequency capacitance |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461629A (en) * | 2018-03-02 | 2018-08-28 | 福建省福芯电子科技有限公司 | Silicon substrate radio frequency capacitance and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461629A (en) * | 2018-03-02 | 2018-08-28 | 福建省福芯电子科技有限公司 | Silicon substrate radio frequency capacitance and preparation method thereof |
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Effective date of registration: 20200427 Address after: 350000 units C and D, 22 / F, building 5, Fuzhou Software Park, No. 89, software Avenue, Gulou District, Fuzhou City, Fujian Province Co-patentee after: Wuxi mamente Microelectronics Co., Ltd Patentee after: FUJIAN FUXIN ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 350001 the 22 layer C and D unit of the No. 5 building, F District, Fuzhou Software Park, No. 89, the software avenue of the Drum Tower District, Fuzhou, Fujian Patentee before: FUJIAN FUXIN ELECTRONIC TECHNOLOGY Co.,Ltd. |
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